FR2506077B1 - - Google Patents
Info
- Publication number
- FR2506077B1 FR2506077B1 FR8208511A FR8208511A FR2506077B1 FR 2506077 B1 FR2506077 B1 FR 2506077B1 FR 8208511 A FR8208511 A FR 8208511A FR 8208511 A FR8208511 A FR 8208511A FR 2506077 B1 FR2506077 B1 FR 2506077B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/157—CCD or CID infrared image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/227—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a Schottky barrier
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US26415681A | 1981-05-15 | 1981-05-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2506077A1 FR2506077A1 (fr) | 1982-11-19 |
| FR2506077B1 true FR2506077B1 (enExample) | 1985-01-04 |
Family
ID=23004854
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR8208511A Granted FR2506077A1 (fr) | 1981-05-15 | 1982-05-14 | Detecteur photosensible notamment pour image infrarouge |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS57198656A (enExample) |
| DE (1) | DE3217895A1 (enExample) |
| FR (1) | FR2506077A1 (enExample) |
| GB (1) | GB2100511B (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5961959A (ja) * | 1982-09-30 | 1984-04-09 | Mitsubishi Electric Corp | 赤外線固体撮像素子 |
| JPH0658952B2 (ja) * | 1984-06-22 | 1994-08-03 | 三菱電機株式会社 | 固体撮像素子 |
| US4602158A (en) * | 1984-10-26 | 1986-07-22 | Itek Corporation | PbS-PbSe IR detector arrays |
| JPH0644578B2 (ja) * | 1984-12-21 | 1994-06-08 | 三菱電機株式会社 | 電荷転送素子 |
| FR2803950B1 (fr) * | 2000-01-14 | 2002-03-01 | Centre Nat Rech Scient | Dispositif de photodetection a microresonateur metal- semiconducteur vertical et procede de fabrication de ce dispositif |
| US7026602B2 (en) * | 2001-04-13 | 2006-04-11 | Research Triangle Institute | Electromagnetic radiation detectors having a microelectromechanical shutter device |
| DE102007046501A1 (de) * | 2007-09-28 | 2009-04-09 | Siemens Ag | Infrarot-Bildsensor |
| CN113161442B (zh) * | 2021-04-22 | 2022-10-14 | 合肥工业大学 | 一种硅肖特基结线阵列近红外光电探测器 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3739240A (en) * | 1971-04-06 | 1973-06-12 | Bell Telephone Labor Inc | Buried channel charge coupled devices |
| US4210922A (en) * | 1975-11-28 | 1980-07-01 | U.S. Philips Corporation | Charge coupled imaging device having selective wavelength sensitivity |
| DE2740996A1 (de) * | 1977-09-12 | 1979-03-22 | Siemens Ag | Sensorzelle fuer einen optoelektronischen sensor |
| DE2743245A1 (de) * | 1977-09-26 | 1979-04-05 | Siemens Ag | Ladungsgekoppeltes bauelement |
| EP0025658A3 (en) * | 1979-09-18 | 1983-04-20 | The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and | Improvements in or relating to charge storage and transfer devices and their fabrication |
-
1982
- 1982-05-10 GB GB8213498A patent/GB2100511B/en not_active Expired
- 1982-05-12 DE DE19823217895 patent/DE3217895A1/de not_active Ceased
- 1982-05-12 JP JP57080814A patent/JPS57198656A/ja active Pending
- 1982-05-14 FR FR8208511A patent/FR2506077A1/fr active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS57198656A (en) | 1982-12-06 |
| FR2506077A1 (fr) | 1982-11-19 |
| GB2100511B (en) | 1985-02-27 |
| GB2100511A (en) | 1982-12-22 |
| DE3217895A1 (de) | 1982-12-02 |
Similar Documents
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| ST | Notification of lapse |