FR2506077A1 - Detecteur photosensible notamment pour image infrarouge - Google Patents
Detecteur photosensible notamment pour image infrarougeInfo
- Publication number
- FR2506077A1 FR2506077A1 FR8208511A FR8208511A FR2506077A1 FR 2506077 A1 FR2506077 A1 FR 2506077A1 FR 8208511 A FR8208511 A FR 8208511A FR 8208511 A FR8208511 A FR 8208511A FR 2506077 A1 FR2506077 A1 FR 2506077A1
- Authority
- FR
- France
- Prior art keywords
- infrared image
- detector
- silicon
- photosensitive detector
- detection
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001514 detection method Methods 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 230000008878 coupling Effects 0.000 abstract 1
- 238000010168 coupling process Methods 0.000 abstract 1
- 238000005859 coupling reaction Methods 0.000 abstract 1
- 230000009977 dual effect Effects 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14875—Infrared CCD or CID imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
L'INVENTION CONCERNE UN DETECTEUR UTILE POUR LA DETECTION D'IMAGES INFRAROUGES BIDIMENSIONNELLES. ELLE SE RAPPORTE A UN DETECTEUR AYANT UN SUBSTRAT 10 DE SILICIUM ET UNE COUCHE 16 DE CANAL FORMEE DE SILICIUM DE L'AUTRE TYPE DE CONDUCTIVITE. DES CONTACTS METALLIQUES 18-24 SONT DISPOSES SUR LE CANAL ET FORMENT DES BARRIERES DE SCHOTTKY. DE CETTE MANIERE, LE DISPOSITIF A UNE DOUBLE FONCTION, D'UNE PART LA DETECTION DES PHOTONS ET D'AUTRE PART LE MULTIPLEXAGE DU SIGNAL, PAR UN PHENOMENE DE COUPLAGE PAR CHARGE. APPLICATION AUX APPAREILS DE FORMATION D'IMAGES INFRAROUGES.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US26415681A | 1981-05-15 | 1981-05-15 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2506077A1 true FR2506077A1 (fr) | 1982-11-19 |
FR2506077B1 FR2506077B1 (fr) | 1985-01-04 |
Family
ID=23004854
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8208511A Granted FR2506077A1 (fr) | 1981-05-15 | 1982-05-14 | Detecteur photosensible notamment pour image infrarouge |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS57198656A (fr) |
DE (1) | DE3217895A1 (fr) |
FR (1) | FR2506077A1 (fr) |
GB (1) | GB2100511B (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2572610A1 (fr) * | 1984-10-26 | 1986-05-02 | Itek Corp | Reseau de detecteurs infrarouges pbs-pbse et procede de fabrication |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5961959A (ja) * | 1982-09-30 | 1984-04-09 | Mitsubishi Electric Corp | 赤外線固体撮像素子 |
JPH0658952B2 (ja) * | 1984-06-22 | 1994-08-03 | 三菱電機株式会社 | 固体撮像素子 |
JPH0644578B2 (ja) * | 1984-12-21 | 1994-06-08 | 三菱電機株式会社 | 電荷転送素子 |
FR2803950B1 (fr) * | 2000-01-14 | 2002-03-01 | Centre Nat Rech Scient | Dispositif de photodetection a microresonateur metal- semiconducteur vertical et procede de fabrication de ce dispositif |
US7026602B2 (en) * | 2001-04-13 | 2006-04-11 | Research Triangle Institute | Electromagnetic radiation detectors having a microelectromechanical shutter device |
DE102007046501A1 (de) * | 2007-09-28 | 2009-04-09 | Siemens Ag | Infrarot-Bildsensor |
CN113161442B (zh) * | 2021-04-22 | 2022-10-14 | 合肥工业大学 | 一种硅肖特基结线阵列近红外光电探测器 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3739240A (en) * | 1971-04-06 | 1973-06-12 | Bell Telephone Labor Inc | Buried channel charge coupled devices |
DE2740996A1 (de) * | 1977-09-12 | 1979-03-22 | Siemens Ag | Sensorzelle fuer einen optoelektronischen sensor |
US4210922A (en) * | 1975-11-28 | 1980-07-01 | U.S. Philips Corporation | Charge coupled imaging device having selective wavelength sensitivity |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2743245A1 (de) * | 1977-09-26 | 1979-04-05 | Siemens Ag | Ladungsgekoppeltes bauelement |
EP0025658A3 (fr) * | 1979-09-18 | 1983-04-20 | The Secretary of State for Defence in Her Britannic Majesty's Government of the United Kingdom of Great Britain and | Dispositifs de stockage et de transfert de charges et leur procédé de fabrication |
-
1982
- 1982-05-10 GB GB8213498A patent/GB2100511B/en not_active Expired
- 1982-05-12 JP JP57080814A patent/JPS57198656A/ja active Pending
- 1982-05-12 DE DE19823217895 patent/DE3217895A1/de not_active Ceased
- 1982-05-14 FR FR8208511A patent/FR2506077A1/fr active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3739240A (en) * | 1971-04-06 | 1973-06-12 | Bell Telephone Labor Inc | Buried channel charge coupled devices |
US4210922A (en) * | 1975-11-28 | 1980-07-01 | U.S. Philips Corporation | Charge coupled imaging device having selective wavelength sensitivity |
DE2740996A1 (de) * | 1977-09-12 | 1979-03-22 | Siemens Ag | Sensorzelle fuer einen optoelektronischen sensor |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2572610A1 (fr) * | 1984-10-26 | 1986-05-02 | Itek Corp | Reseau de detecteurs infrarouges pbs-pbse et procede de fabrication |
Also Published As
Publication number | Publication date |
---|---|
FR2506077B1 (fr) | 1985-01-04 |
JPS57198656A (en) | 1982-12-06 |
GB2100511A (en) | 1982-12-22 |
GB2100511B (en) | 1985-02-27 |
DE3217895A1 (de) | 1982-12-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |