FR2705495B1 - Dispositif de prise d'image à semiconducteur de type CCD ayant une structure à drain de débordement. - Google Patents

Dispositif de prise d'image à semiconducteur de type CCD ayant une structure à drain de débordement.

Info

Publication number
FR2705495B1
FR2705495B1 FR9406059A FR9406059A FR2705495B1 FR 2705495 B1 FR2705495 B1 FR 2705495B1 FR 9406059 A FR9406059 A FR 9406059A FR 9406059 A FR9406059 A FR 9406059A FR 2705495 B1 FR2705495 B1 FR 2705495B1
Authority
FR
France
Prior art keywords
type semiconductor
taking device
image taking
drain structure
overflow drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR9406059A
Other languages
English (en)
Other versions
FR2705495A1 (fr
Inventor
Bum-Sik Kim
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Electronics Co Ltd
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of FR2705495A1 publication Critical patent/FR2705495A1/fr
Application granted granted Critical
Publication of FR2705495B1 publication Critical patent/FR2705495B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14887—Blooming suppression
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
FR9406059A 1993-05-18 1994-05-18 Dispositif de prise d'image à semiconducteur de type CCD ayant une structure à drain de débordement. Expired - Fee Related FR2705495B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019930008468A KR970007711B1 (ko) 1993-05-18 1993-05-18 오버-플로우 드레인(ofd)구조를 가지는 전하결합소자형 고체촬상장치

Publications (2)

Publication Number Publication Date
FR2705495A1 FR2705495A1 (fr) 1994-11-25
FR2705495B1 true FR2705495B1 (fr) 1995-09-15

Family

ID=19355509

Family Applications (1)

Application Number Title Priority Date Filing Date
FR9406059A Expired - Fee Related FR2705495B1 (fr) 1993-05-18 1994-05-18 Dispositif de prise d'image à semiconducteur de type CCD ayant une structure à drain de débordement.

Country Status (5)

Country Link
US (1) US5619049A (fr)
JP (1) JP3645585B2 (fr)
KR (1) KR970007711B1 (fr)
DE (1) DE4417159C2 (fr)
FR (1) FR2705495B1 (fr)

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2897689B2 (ja) * 1995-05-31 1999-05-31 日本電気株式会社 固体撮像装置
KR0162691B1 (ko) * 1995-06-03 1998-12-01 문정환 고체 촬상소자의 수광부 구조 및 그 제조방법
KR100198622B1 (ko) * 1995-12-11 1999-06-15 구본준 고체촬상소자 및 이의 제조방법
KR100192954B1 (ko) * 1996-07-18 1999-06-15 김광호 수직형 전달게이트를 가지는 전하결합형 고체촬상소자 및 그 제조방법
JP3003590B2 (ja) * 1996-10-02 2000-01-31 日本電気株式会社 固体撮像素子およびその製造方法
JP2897825B2 (ja) * 1996-12-20 1999-05-31 日本電気株式会社 固体撮像装置
JP3033524B2 (ja) * 1997-05-23 2000-04-17 日本電気株式会社 固体撮像装置
KR100223805B1 (ko) * 1997-06-13 1999-10-15 구본준 고체 촬상소자의 제조방법
JP3024595B2 (ja) * 1997-07-04 2000-03-21 日本電気株式会社 固体撮像装置およびその製造方法
US6333526B1 (en) * 1997-11-27 2001-12-25 Nec Corporation Charge transfer device and a manufacturing process therefor
US6064053A (en) * 1998-04-02 2000-05-16 Vanguard International Semiconductor Corporation Operation methods for active BiCMOS pixel for electronic shutter and image-lag elimination
US6346722B1 (en) * 1998-06-26 2002-02-12 Nec Corporation Solid state imaging device and method for manufacturing the same
US6331873B1 (en) 1998-12-03 2001-12-18 Massachusetts Institute Of Technology High-precision blooming control structure formation for an image sensor
US6337495B1 (en) * 1999-06-08 2002-01-08 Fuji Photo Film Co., Ltd. Solid-state image pickup device
JP2001291858A (ja) * 2000-04-04 2001-10-19 Sony Corp 固体撮像素子及びその製造方法
KR100332949B1 (ko) * 2000-05-23 2002-04-20 윤종용 전자 줌 기능에 적합한 고체 촬상 소자
JP2002077544A (ja) * 2000-08-28 2002-03-15 Nikon Corp 画像読取装置、その制御手順を記憶した記憶媒体、及びその制御手順を含んだコンピュータプログラム信号を符号化して伝送するためのデータ構造
JP3724374B2 (ja) * 2001-01-15 2005-12-07 ソニー株式会社 固体撮像装置及びその駆動方法
JP4489319B2 (ja) * 2001-04-26 2010-06-23 富士通マイクロエレクトロニクス株式会社 固体撮像装置
JP4109858B2 (ja) * 2001-11-13 2008-07-02 株式会社東芝 固体撮像装置
JP2004140258A (ja) 2002-10-18 2004-05-13 Sanyo Electric Co Ltd 固体撮像素子及びその製造方法
EP1608023B1 (fr) * 2003-03-06 2012-01-18 Sony Corporation Dispositif de detection d'images a l'etat solide, procede pour le produire
US7443437B2 (en) * 2003-11-26 2008-10-28 Micron Technology, Inc. Image sensor with a gated storage node linked to transfer gate
US11282891B2 (en) 2003-11-26 2022-03-22 Samsung Electronics Co., Ltd. Image sensor with a gated storage node linked to transfer gate
JP2005175104A (ja) * 2003-12-10 2005-06-30 Sony Corp 固体撮像素子
JP4572130B2 (ja) * 2005-03-09 2010-10-27 富士フイルム株式会社 固体撮像素子
US7830412B2 (en) * 2005-08-22 2010-11-09 Aptina Imaging Corporation Method and apparatus for shielding correction pixels from spurious charges in an imager
WO2008030851A2 (fr) * 2006-09-08 2008-03-13 Sarnoff Corporation Structures anti-éblouissement pour imageurs rétroéclairés
KR100881200B1 (ko) * 2007-07-30 2009-02-05 삼성전자주식회사 씨모스 이미지 센서 및 그 제조방법
JP2009182047A (ja) * 2008-01-29 2009-08-13 Sharp Corp 固体撮像素子および電子情報機器
US9029972B2 (en) * 2012-09-25 2015-05-12 Semiconductor Components Industries, Llc Image sensors with in-pixel anti-blooming drains
JP2015220339A (ja) * 2014-05-16 2015-12-07 株式会社東芝 固体撮像装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5812480A (ja) * 1981-07-15 1983-01-24 Toshiba Corp 複合形固体撮像素子
JPS6089967A (ja) * 1983-10-24 1985-05-20 Sony Corp 光電変換素子
US4875100A (en) * 1986-10-23 1989-10-17 Sony Corporation Electronic shutter for a CCD image sensor
JP2506697B2 (ja) * 1986-12-05 1996-06-12 松下電子工業株式会社 固体撮像装置
US4984047A (en) * 1988-03-21 1991-01-08 Eastman Kodak Company Solid-state image sensor
JP2822393B2 (ja) * 1988-07-30 1998-11-11 ソニー株式会社 固体撮像装置及びその駆動方法
JPH0360159A (ja) * 1989-07-28 1991-03-15 Nec Corp 固体撮像素子
JPH05251684A (ja) * 1991-11-25 1993-09-28 Eastman Kodak Co ブルーミング防止特性を向上させたｃｃｄ画像センサ
JPH05275673A (ja) * 1992-03-24 1993-10-22 Sony Corp 固体撮像素子
KR100259063B1 (ko) * 1992-06-12 2000-06-15 김영환 Ccd 영상소자

Also Published As

Publication number Publication date
FR2705495A1 (fr) 1994-11-25
US5619049A (en) 1997-04-08
KR970007711B1 (ko) 1997-05-15
JP3645585B2 (ja) 2005-05-11
JPH0750402A (ja) 1995-02-21
DE4417159C2 (de) 2003-04-03
DE4417159A1 (de) 1994-11-24
KR940027509A (ko) 1994-12-10

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Effective date: 20100129