FR2705495B1 - Dispositif de prise d'image à semiconducteur de type CCD ayant une structure à drain de débordement. - Google Patents
Dispositif de prise d'image à semiconducteur de type CCD ayant une structure à drain de débordement.Info
- Publication number
- FR2705495B1 FR2705495B1 FR9406059A FR9406059A FR2705495B1 FR 2705495 B1 FR2705495 B1 FR 2705495B1 FR 9406059 A FR9406059 A FR 9406059A FR 9406059 A FR9406059 A FR 9406059A FR 2705495 B1 FR2705495 B1 FR 2705495B1
- Authority
- FR
- France
- Prior art keywords
- type semiconductor
- taking device
- image taking
- drain structure
- overflow drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14887—Blooming suppression
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Multimedia (AREA)
- Signal Processing (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019930008468A KR970007711B1 (ko) | 1993-05-18 | 1993-05-18 | 오버-플로우 드레인(ofd)구조를 가지는 전하결합소자형 고체촬상장치 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2705495A1 FR2705495A1 (fr) | 1994-11-25 |
FR2705495B1 true FR2705495B1 (fr) | 1995-09-15 |
Family
ID=19355509
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR9406059A Expired - Fee Related FR2705495B1 (fr) | 1993-05-18 | 1994-05-18 | Dispositif de prise d'image à semiconducteur de type CCD ayant une structure à drain de débordement. |
Country Status (5)
Country | Link |
---|---|
US (1) | US5619049A (fr) |
JP (1) | JP3645585B2 (fr) |
KR (1) | KR970007711B1 (fr) |
DE (1) | DE4417159C2 (fr) |
FR (1) | FR2705495B1 (fr) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2897689B2 (ja) * | 1995-05-31 | 1999-05-31 | 日本電気株式会社 | 固体撮像装置 |
KR0162691B1 (ko) * | 1995-06-03 | 1998-12-01 | 문정환 | 고체 촬상소자의 수광부 구조 및 그 제조방법 |
KR100198622B1 (ko) * | 1995-12-11 | 1999-06-15 | 구본준 | 고체촬상소자 및 이의 제조방법 |
KR100192954B1 (ko) * | 1996-07-18 | 1999-06-15 | 김광호 | 수직형 전달게이트를 가지는 전하결합형 고체촬상소자 및 그 제조방법 |
JP3003590B2 (ja) * | 1996-10-02 | 2000-01-31 | 日本電気株式会社 | 固体撮像素子およびその製造方法 |
JP2897825B2 (ja) * | 1996-12-20 | 1999-05-31 | 日本電気株式会社 | 固体撮像装置 |
JP3033524B2 (ja) * | 1997-05-23 | 2000-04-17 | 日本電気株式会社 | 固体撮像装置 |
KR100223805B1 (ko) * | 1997-06-13 | 1999-10-15 | 구본준 | 고체 촬상소자의 제조방법 |
JP3024595B2 (ja) * | 1997-07-04 | 2000-03-21 | 日本電気株式会社 | 固体撮像装置およびその製造方法 |
US6333526B1 (en) * | 1997-11-27 | 2001-12-25 | Nec Corporation | Charge transfer device and a manufacturing process therefor |
US6064053A (en) * | 1998-04-02 | 2000-05-16 | Vanguard International Semiconductor Corporation | Operation methods for active BiCMOS pixel for electronic shutter and image-lag elimination |
US6346722B1 (en) * | 1998-06-26 | 2002-02-12 | Nec Corporation | Solid state imaging device and method for manufacturing the same |
US6331873B1 (en) | 1998-12-03 | 2001-12-18 | Massachusetts Institute Of Technology | High-precision blooming control structure formation for an image sensor |
US6337495B1 (en) * | 1999-06-08 | 2002-01-08 | Fuji Photo Film Co., Ltd. | Solid-state image pickup device |
JP2001291858A (ja) * | 2000-04-04 | 2001-10-19 | Sony Corp | 固体撮像素子及びその製造方法 |
KR100332949B1 (ko) * | 2000-05-23 | 2002-04-20 | 윤종용 | 전자 줌 기능에 적합한 고체 촬상 소자 |
JP2002077544A (ja) * | 2000-08-28 | 2002-03-15 | Nikon Corp | 画像読取装置、その制御手順を記憶した記憶媒体、及びその制御手順を含んだコンピュータプログラム信号を符号化して伝送するためのデータ構造 |
JP3724374B2 (ja) * | 2001-01-15 | 2005-12-07 | ソニー株式会社 | 固体撮像装置及びその駆動方法 |
JP4489319B2 (ja) * | 2001-04-26 | 2010-06-23 | 富士通マイクロエレクトロニクス株式会社 | 固体撮像装置 |
JP4109858B2 (ja) * | 2001-11-13 | 2008-07-02 | 株式会社東芝 | 固体撮像装置 |
JP2004140258A (ja) | 2002-10-18 | 2004-05-13 | Sanyo Electric Co Ltd | 固体撮像素子及びその製造方法 |
EP1608023B1 (fr) * | 2003-03-06 | 2012-01-18 | Sony Corporation | Dispositif de detection d'images a l'etat solide, procede pour le produire |
US7443437B2 (en) * | 2003-11-26 | 2008-10-28 | Micron Technology, Inc. | Image sensor with a gated storage node linked to transfer gate |
US11282891B2 (en) | 2003-11-26 | 2022-03-22 | Samsung Electronics Co., Ltd. | Image sensor with a gated storage node linked to transfer gate |
JP2005175104A (ja) * | 2003-12-10 | 2005-06-30 | Sony Corp | 固体撮像素子 |
JP4572130B2 (ja) * | 2005-03-09 | 2010-10-27 | 富士フイルム株式会社 | 固体撮像素子 |
US7830412B2 (en) * | 2005-08-22 | 2010-11-09 | Aptina Imaging Corporation | Method and apparatus for shielding correction pixels from spurious charges in an imager |
WO2008030851A2 (fr) * | 2006-09-08 | 2008-03-13 | Sarnoff Corporation | Structures anti-éblouissement pour imageurs rétroéclairés |
KR100881200B1 (ko) * | 2007-07-30 | 2009-02-05 | 삼성전자주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
JP2009182047A (ja) * | 2008-01-29 | 2009-08-13 | Sharp Corp | 固体撮像素子および電子情報機器 |
US9029972B2 (en) * | 2012-09-25 | 2015-05-12 | Semiconductor Components Industries, Llc | Image sensors with in-pixel anti-blooming drains |
JP2015220339A (ja) * | 2014-05-16 | 2015-12-07 | 株式会社東芝 | 固体撮像装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5812480A (ja) * | 1981-07-15 | 1983-01-24 | Toshiba Corp | 複合形固体撮像素子 |
JPS6089967A (ja) * | 1983-10-24 | 1985-05-20 | Sony Corp | 光電変換素子 |
US4875100A (en) * | 1986-10-23 | 1989-10-17 | Sony Corporation | Electronic shutter for a CCD image sensor |
JP2506697B2 (ja) * | 1986-12-05 | 1996-06-12 | 松下電子工業株式会社 | 固体撮像装置 |
US4984047A (en) * | 1988-03-21 | 1991-01-08 | Eastman Kodak Company | Solid-state image sensor |
JP2822393B2 (ja) * | 1988-07-30 | 1998-11-11 | ソニー株式会社 | 固体撮像装置及びその駆動方法 |
JPH0360159A (ja) * | 1989-07-28 | 1991-03-15 | Nec Corp | 固体撮像素子 |
JPH05251684A (ja) * | 1991-11-25 | 1993-09-28 | Eastman Kodak Co | ブルーミング防止特性を向上させたccd画像センサ |
JPH05275673A (ja) * | 1992-03-24 | 1993-10-22 | Sony Corp | 固体撮像素子 |
KR100259063B1 (ko) * | 1992-06-12 | 2000-06-15 | 김영환 | Ccd 영상소자 |
-
1993
- 1993-05-18 KR KR1019930008468A patent/KR970007711B1/ko not_active IP Right Cessation
-
1994
- 1994-05-17 DE DE4417159A patent/DE4417159C2/de not_active Expired - Lifetime
- 1994-05-18 FR FR9406059A patent/FR2705495B1/fr not_active Expired - Fee Related
- 1994-05-18 JP JP10390794A patent/JP3645585B2/ja not_active Expired - Fee Related
- 1994-05-18 US US08/246,232 patent/US5619049A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
FR2705495A1 (fr) | 1994-11-25 |
US5619049A (en) | 1997-04-08 |
KR970007711B1 (ko) | 1997-05-15 |
JP3645585B2 (ja) | 2005-05-11 |
JPH0750402A (ja) | 1995-02-21 |
DE4417159C2 (de) | 2003-04-03 |
DE4417159A1 (de) | 1994-11-24 |
KR940027509A (ko) | 1994-12-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |
Effective date: 20100129 |