DE68915930D1 - CCD-Bildsensor mit vertikaler Überlauf-Senke. - Google Patents

CCD-Bildsensor mit vertikaler Überlauf-Senke.

Info

Publication number
DE68915930D1
DE68915930D1 DE68915930T DE68915930T DE68915930D1 DE 68915930 D1 DE68915930 D1 DE 68915930D1 DE 68915930 T DE68915930 T DE 68915930T DE 68915930 T DE68915930 T DE 68915930T DE 68915930 D1 DE68915930 D1 DE 68915930D1
Authority
DE
Germany
Prior art keywords
image sensor
ccd image
vertical overflow
overflow sink
sink
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE68915930T
Other languages
English (en)
Other versions
DE68915930T2 (de
Inventor
Akiyoshi Kohno
Atsushi Mikoshiba
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Application granted granted Critical
Publication of DE68915930D1 publication Critical patent/DE68915930D1/de
Publication of DE68915930T2 publication Critical patent/DE68915930T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/62—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels
    • H04N25/621—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming
    • H04N25/622—Detection or reduction of noise due to excess charges produced by the exposure, e.g. smear, blooming, ghost image, crosstalk or leakage between pixels for the control of blooming by controlling anti-blooming drains
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14887—Blooming suppression
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/53—Control of the integration time
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Color Television Image Signal Generators (AREA)
DE68915930T 1988-10-21 1989-10-19 CCD-Bildsensor mit vertikaler Überlauf-Senke. Expired - Fee Related DE68915930T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP63266539A JPH02113678A (ja) 1988-10-21 1988-10-21 固体撮像装置

Publications (2)

Publication Number Publication Date
DE68915930D1 true DE68915930D1 (de) 1994-07-14
DE68915930T2 DE68915930T2 (de) 1995-01-19

Family

ID=17432270

Family Applications (1)

Application Number Title Priority Date Filing Date
DE68915930T Expired - Fee Related DE68915930T2 (de) 1988-10-21 1989-10-19 CCD-Bildsensor mit vertikaler Überlauf-Senke.

Country Status (4)

Country Link
US (1) US4977584A (de)
EP (1) EP0365000B1 (de)
JP (1) JPH02113678A (de)
DE (1) DE68915930T2 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02155378A (ja) * 1988-12-07 1990-06-14 Nec Corp 固体撮像素子の駆動方法
US5282041A (en) * 1988-12-15 1994-01-25 Asahi Kogaku Kogyo Kabushiki Kaisha Apparatus for driving image pick-up device
US5132759A (en) * 1989-07-28 1992-07-21 Kabushiki Kaisha Toshiba Solid-state imaging device in which reverse bias voltage is automatically set
JPH0360159A (ja) * 1989-07-28 1991-03-15 Nec Corp 固体撮像素子
JP2808315B2 (ja) * 1989-08-08 1998-10-08 旭光学工業株式会社 撮像素子駆動装置
JPH03163872A (ja) * 1989-11-22 1991-07-15 Hamamatsu Photonics Kk 撮像デバイス
US5276341A (en) * 1990-05-11 1994-01-04 Gold Star Electron Co., Ltd. Structure for fabrication of a CCD image sensor
US5410349A (en) * 1990-07-06 1995-04-25 Fuji Photo Film Co., Ltd. Solid-state image pick-up device of the charge-coupled device type synchronizing drive signals for a full-frame read-out
US5215928A (en) * 1990-09-07 1993-06-01 Sony Corporation Method of manufacturing a semiconductor device for optical pick-up
US5329149A (en) * 1990-10-12 1994-07-12 Seiko Instruments Inc. Image sensor with non-light-transmissive layer having photosensing windows
KR930008527B1 (ko) * 1990-10-13 1993-09-09 금성일렉트론 주식회사 Npn형 vccd 구조의 고체촬상 소자
JPH05275673A (ja) * 1992-03-24 1993-10-22 Sony Corp 固体撮像素子
JP3271086B2 (ja) * 1992-09-29 2002-04-02 ソニー株式会社 固体撮像素子の駆動回路
DE69329100T2 (de) * 1992-12-09 2001-03-22 Koninkl Philips Electronics Nv Ladungsgekoppelte Anordnung
US5489994A (en) * 1993-10-29 1996-02-06 Eastman Kodak Company Integrated apertures on a full frame CCD image sensor
US5598210A (en) * 1995-02-15 1997-01-28 Eastman Kodak Company On chip driver for electric shuttering
JP3598648B2 (ja) * 1996-04-02 2004-12-08 ソニー株式会社 電荷転送素子及び電荷転送素子の駆動方法
US5986297A (en) * 1996-05-22 1999-11-16 Eastman Kodak Company Color active pixel sensor with electronic shuttering, anti-blooming and low cross-talk
US5872371A (en) * 1997-02-27 1999-02-16 Eastman Kodak Company Active pixel sensor with punch-through reset and cross-talk suppression
JP2812310B2 (ja) * 1996-07-30 1998-10-22 日本電気株式会社 固体撮像装置及びその製造方法
JP3308904B2 (ja) * 1998-06-24 2002-07-29 キヤノン株式会社 固体撮像装置
US6218692B1 (en) 1999-11-23 2001-04-17 Eastman Kodak Company Color active pixel sensor with electronic shuttering, anti-blooming and low cross talk
US7075575B2 (en) * 2000-11-06 2006-07-11 Isetex, Inc. Gated vertical punch through device used as a high performance charge detection amplifier
US6800870B2 (en) * 2000-12-20 2004-10-05 Michel Sayag Light stimulating and collecting methods and apparatus for storage-phosphor image plates
JP4833722B2 (ja) * 2006-04-25 2011-12-07 パナソニック株式会社 撮像装置、固体撮像装置および撮像装置の駆動方法
US9848142B2 (en) * 2015-07-10 2017-12-19 Semiconductor Components Industries, Llc Methods for clocking an image sensor

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3896485A (en) * 1973-12-03 1975-07-22 Fairchild Camera Instr Co Charge-coupled device with overflow protection
JPS5451318A (en) * 1977-09-29 1979-04-23 Sony Corp Solid pickup unit
JPS6033345B2 (ja) * 1979-06-08 1985-08-02 日本電気株式会社 電荷転送撮像装置とその駆動方法
JPS5919480A (ja) * 1982-07-26 1984-01-31 Olympus Optical Co Ltd 固体撮像装置
JPH07118788B2 (ja) * 1986-10-28 1995-12-18 株式会社東芝 電子スチルカメラ
EP0286123B1 (de) * 1987-04-10 1992-12-30 Kabushiki Kaisha Toshiba Festkörper-Bildabtaster mit Hochgeschwindigkeitsverschluss und Verfahren zur Erzielung einer hohen Verschlussgeschwindigkeit in einem Festkörper-Bildabtaster
US4912560A (en) * 1988-01-29 1990-03-27 Kabushiki Kaisha Toshiba Solid state image sensing device

Also Published As

Publication number Publication date
US4977584A (en) 1990-12-11
DE68915930T2 (de) 1995-01-19
EP0365000B1 (de) 1994-06-08
EP0365000A1 (de) 1990-04-25
JPH02113678A (ja) 1990-04-25

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee