JPS5451318A - Solid pickup unit - Google Patents

Solid pickup unit

Info

Publication number
JPS5451318A
JPS5451318A JP12688577A JP12688577A JPS5451318A JP S5451318 A JPS5451318 A JP S5451318A JP 12688577 A JP12688577 A JP 12688577A JP 12688577 A JP12688577 A JP 12688577A JP S5451318 A JPS5451318 A JP S5451318A
Authority
JP
Japan
Prior art keywords
electrode
overflow
pickup unit
electrically
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP12688577A
Other languages
Japanese (ja)
Inventor
Nariyuki Ochi
Takeo Hashimoto
Yoshiaki Hagiwara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP12688577A priority Critical patent/JPS5451318A/en
Priority to FR7827214A priority patent/FR2409646A1/en
Priority to GB7838523A priority patent/GB2007937B/en
Priority to CA312,252A priority patent/CA1125421A/en
Priority to DE2842346A priority patent/DE2842346C2/en
Priority to NL7809866A priority patent/NL7809866A/en
Publication of JPS5451318A publication Critical patent/JPS5451318A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H01J29/453—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays
    • H01J29/455—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays formed on a silicon substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14887—Blooming suppression
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/571—Control of the dynamic range involving a non-linear response
    • H04N25/575—Control of the dynamic range involving a non-linear response with a response composed of multiple slopes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/73—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using interline transfer [IT]
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Nonlinear Science (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Picture Signal Circuits (AREA)

Abstract

PURPOSE: To attain the accurate gamma correcion of a solid pickup unit on an inter- line trans. system, by controlling the overflow of charge into an overflow drain region.
CONSTITUTION: Senser electrode 18 of each senser part 1 of a solid pickup unit and control electrode 17 of overflow control part 8 provided corresponding to it are constituted in common electrically, and a different in minimum potential between sensor part 1 and overflow control part 8 is made to vary with a common voltage to this electrically common electrode. Then, gate electrode 15 of gate part 10 between sensor part 1, and shift register parts 2 and 3, and electrode 13 supplied with the clock phase of either shift register 2 or 3 are constituted in connon electrically, and at the time when the minimum potential of gate part 10 is decreased , the overflow control is done so as to make the gamma correction
COPYRIGHT: (C)1979,JPO&Japio
JP12688577A 1977-09-29 1977-09-29 Solid pickup unit Pending JPS5451318A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP12688577A JPS5451318A (en) 1977-09-29 1977-09-29 Solid pickup unit
FR7827214A FR2409646A1 (en) 1977-09-29 1978-09-22 SOLID STATE TECHNOLOGY IMAGE DETECTOR
GB7838523A GB2007937B (en) 1977-09-29 1978-09-28 Solid state image sensors
CA312,252A CA1125421A (en) 1977-09-29 1978-09-28 Solid state image sensor
DE2842346A DE2842346C2 (en) 1977-09-29 1978-09-28 CCD and method for operating such a device using the inter-slit principle
NL7809866A NL7809866A (en) 1977-09-29 1978-09-29 SOLID-STATE IMAGE DETECTION DEVICE.

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12688577A JPS5451318A (en) 1977-09-29 1977-09-29 Solid pickup unit

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP1138150A Division JPH02243073A (en) 1989-05-31 1989-05-31 Solid-state image pickup device

Publications (1)

Publication Number Publication Date
JPS5451318A true JPS5451318A (en) 1979-04-23

Family

ID=14946246

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12688577A Pending JPS5451318A (en) 1977-09-29 1977-09-29 Solid pickup unit

Country Status (6)

Country Link
JP (1) JPS5451318A (en)
CA (1) CA1125421A (en)
DE (1) DE2842346C2 (en)
FR (1) FR2409646A1 (en)
GB (1) GB2007937B (en)
NL (1) NL7809866A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55151592U (en) * 1979-04-19 1980-10-31
JPS55163953A (en) * 1979-06-08 1980-12-20 Nec Corp Ccd shift register
JPS55163956A (en) * 1979-06-08 1980-12-20 Nec Corp Shift register and its driving method
JPS55163882A (en) * 1979-06-06 1980-12-20 Nec Corp System for driving charge transfer element
JPS5665578A (en) * 1979-10-31 1981-06-03 Fujitsu Ltd Two dimensional solidstate image sensor
JPS56136086A (en) * 1980-03-27 1981-10-23 Fujitsu Ltd Two-dimensional image pickup device
WO1983000267A1 (en) * 1981-07-06 1983-01-20 Takeshita, Kaneyoshi Solid state image pickup device

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2939403A1 (en) * 1979-09-28 1981-04-16 Siemens AG, 1000 Berlin und 8000 München MONOLITHICALLY INTEGRATED CIRCUIT FOR LINE SCREENING
JPS5685981A (en) * 1979-12-15 1981-07-13 Sharp Corp Solid image pickup apparatus
JPS56104582A (en) * 1980-01-25 1981-08-20 Toshiba Corp Solid image pickup device
JPS56160081A (en) * 1980-05-14 1981-12-09 Matsushita Electronics Corp Solid state image pickup apparatus
DE3173604D1 (en) * 1981-05-19 1986-03-13 Texas Instruments Inc Infrared imaging system with infrared detector matrix, and method of imaging infrared energy
DE3121494A1 (en) * 1981-05-29 1983-01-05 Siemens AG, 1000 Berlin und 8000 München ARRANGEMENT FOR THE CONTACTLESS MEASUREMENT OF ELECTRICAL CHARGE IMAGES IN ELECTRORADIOGRAPHIC RECORDING METHODS
EP0066020B1 (en) * 1981-06-03 1985-10-23 Texas Instruments Incorporated Infrared energy detector system utilizing a charge transfer device sensor
JPS5847378A (en) * 1981-09-17 1983-03-19 Canon Inc Image pickup element
JPS58142570A (en) * 1982-02-19 1983-08-24 Sony Corp Solid-state image pickup device
JPS60254770A (en) * 1984-05-31 1985-12-16 Fujitsu Ltd Charge transfer device
JPS61144874A (en) * 1984-12-19 1986-07-02 Toshiba Corp Charge transfer device
NL8503243A (en) * 1985-11-25 1987-06-16 Optische Ind De Oude Delft Nv IMAGE RECORDING DEVICE FOR DIGITAL RADIOGRAPHY.
JPH07107928B2 (en) * 1986-03-25 1995-11-15 ソニー株式会社 Solid-state imaging device
JPH02113678A (en) * 1988-10-21 1990-04-25 Nec Corp Solid state image pickup device
US5055667A (en) * 1990-06-21 1991-10-08 Loral Fairchild Corporation Non-linear photosite response in CCD imagers
US5276520A (en) * 1991-06-07 1994-01-04 Eastman Kodak Company Enhancing exposure latitude of image sensors
FR2687265A1 (en) * 1993-01-08 1993-08-13 Scanera Sc Electronic image acquisition device with very high dynamic range, and method of acquiring images of very highly contrasted scenes

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50128918A (en) * 1974-03-29 1975-10-11
JPS51142908A (en) * 1975-05-21 1976-12-08 Rca Corp Method of operating picture device
JPS5258414A (en) * 1975-11-10 1977-05-13 Sony Corp Solidstate video signal pick up unit
JPS52109825A (en) * 1976-03-11 1977-09-14 Sony Corp Solid state pick up unit

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3931465A (en) * 1975-01-13 1976-01-06 Rca Corporation Blooming control for charge coupled imager
JPS5937629B2 (en) * 1975-01-30 1984-09-11 ソニー株式会社 solid-state imaging body

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS50128918A (en) * 1974-03-29 1975-10-11
JPS51142908A (en) * 1975-05-21 1976-12-08 Rca Corp Method of operating picture device
JPS5258414A (en) * 1975-11-10 1977-05-13 Sony Corp Solidstate video signal pick up unit
JPS52109825A (en) * 1976-03-11 1977-09-14 Sony Corp Solid state pick up unit

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55151592U (en) * 1979-04-19 1980-10-31
JPS55163882A (en) * 1979-06-06 1980-12-20 Nec Corp System for driving charge transfer element
JPH0118629B2 (en) * 1979-06-06 1989-04-06 Nippon Electric Co
JPS55163953A (en) * 1979-06-08 1980-12-20 Nec Corp Ccd shift register
JPS55163956A (en) * 1979-06-08 1980-12-20 Nec Corp Shift register and its driving method
JPH0118630B2 (en) * 1979-06-08 1989-04-06 Nippon Electric Co
JPS5665578A (en) * 1979-10-31 1981-06-03 Fujitsu Ltd Two dimensional solidstate image sensor
JPS56136086A (en) * 1980-03-27 1981-10-23 Fujitsu Ltd Two-dimensional image pickup device
WO1983000267A1 (en) * 1981-07-06 1983-01-20 Takeshita, Kaneyoshi Solid state image pickup device

Also Published As

Publication number Publication date
NL7809866A (en) 1979-04-02
GB2007937B (en) 1982-03-03
DE2842346A1 (en) 1979-04-12
FR2409646B1 (en) 1983-11-18
DE2842346C2 (en) 1987-05-14
FR2409646A1 (en) 1979-06-15
CA1125421A (en) 1982-06-08
GB2007937A (en) 1979-05-23

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