GB2007937A - Gamma correction of solid state image sensors - Google Patents

Gamma correction of solid state image sensors

Info

Publication number
GB2007937A
GB2007937A GB7838523A GB7838523A GB2007937A GB 2007937 A GB2007937 A GB 2007937A GB 7838523 A GB7838523 A GB 7838523A GB 7838523 A GB7838523 A GB 7838523A GB 2007937 A GB2007937 A GB 2007937A
Authority
GB
United Kingdom
Prior art keywords
sensor
shift register
transfer
horizontal blanking
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB7838523A
Other versions
GB2007937B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of GB2007937A publication Critical patent/GB2007937A/en
Application granted granted Critical
Publication of GB2007937B publication Critical patent/GB2007937B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J29/00—Details of cathode-ray tubes or of electron-beam tubes of the types covered by group H01J31/00
    • H01J29/02—Electrodes; Screens; Mounting, supporting, spacing or insulating thereof
    • H01J29/10—Screens on or from which an image or pattern is formed, picked up, converted or stored
    • H01J29/36—Photoelectric screens; Charge-storage screens
    • H01J29/39—Charge-storage screens
    • H01J29/45—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen
    • H01J29/451—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions
    • H01J29/453—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays
    • H01J29/455—Charge-storage screens exhibiting internal electric effects caused by electromagnetic radiation, e.g. photoconductive screen, photodielectric screen, photovoltaic screen with photosensitive junctions provided with diode arrays formed on a silicon substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14831—Area CCD imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/148—Charge coupled imagers
    • H01L27/14887—Blooming suppression
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/50—Control of the SSIS exposure
    • H04N25/57—Control of the dynamic range
    • H04N25/571—Control of the dynamic range involving a non-linear response
    • H04N25/575—Control of the dynamic range involving a non-linear response with a response composed of multiple slopes
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/73—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using interline transfer [IT]

Abstract

A solid state image sensor of interline transfer type for generating a television video signal, comprises a semiconductor substrate, and a plurality of sensor areas 1 formed on the substrate and arranged in rows and columns. A respective shift register 2 is provided at one side of each column of sensor areas 1 and an overflow drain region 9 is provided at the other side of the column of sensor areas 1. A transfer electrode provided over a portion of the shift register 2, and a transfer gate region 10 which is between the sensor area 1 and the shift register, are supplied with a clock voltage to transfer signal charges to the shift register 2 and to form a potential barrier at the transfer gate region 10 during horizontal blanking intervals. A sensor electrode is provided commonly over the sensor area 1 and an overflow control region 8 which is between the sensor area 1 and the overflow drain region 9. Predetermined voltages are applied to the sensor electrode at predetermined times in the selected horizontal blanking intervals. The voltages applied to the sensor electrode at the selected horizontal blanking interval gradually increase so as to achieve so-called gamma correction. <IMAGE>
GB7838523A 1977-09-29 1978-09-28 Solid state image sensors Expired GB2007937B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12688577A JPS5451318A (en) 1977-09-29 1977-09-29 Solid pickup unit

Publications (2)

Publication Number Publication Date
GB2007937A true GB2007937A (en) 1979-05-23
GB2007937B GB2007937B (en) 1982-03-03

Family

ID=14946246

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7838523A Expired GB2007937B (en) 1977-09-29 1978-09-28 Solid state image sensors

Country Status (6)

Country Link
JP (1) JPS5451318A (en)
CA (1) CA1125421A (en)
DE (1) DE2842346A1 (en)
FR (1) FR2409646A1 (en)
GB (1) GB2007937B (en)
NL (1) NL7809866A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0103023A1 (en) * 1982-02-19 1984-03-21 Sony Corporation Solid-state image pickup device
EP0163547A2 (en) * 1984-05-31 1985-12-04 Fujitsu Limited Image sensor
EP0185343A1 (en) * 1984-12-19 1986-06-25 Kabushiki Kaisha Toshiba Charge transfer device
EP0227133A1 (en) * 1985-11-25 1987-07-01 B.V. Optische Industrie "De Oude Delft" Image-recording equipment for digital radiography
US4733406A (en) * 1981-09-17 1988-03-22 Canon Kabushiki Kaisha Image sensing charge coupled device
US4984044A (en) * 1986-03-25 1991-01-08 Sony Corporation Solid state imager device
FR2668608A1 (en) * 1990-06-21 1992-04-30 Loral Fairchild Corp NON-LINEAR PHOTOSITY RESPONSE IN CCD IMAGERS.
WO1992022091A1 (en) * 1991-06-07 1992-12-10 Eastman Kodak Company Enhanced exposure latitude of image sensor having lateral overflow drain
FR2687265A1 (en) * 1993-01-08 1993-08-13 Scanera Sc Electronic image acquisition device with very high dynamic range, and method of acquiring images of very highly contrasted scenes

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55151592U (en) * 1979-04-19 1980-10-31
JPS55163882A (en) * 1979-06-06 1980-12-20 Nec Corp System for driving charge transfer element
JPS55163956A (en) * 1979-06-08 1980-12-20 Nec Corp Shift register and its driving method
JPS55163953A (en) * 1979-06-08 1980-12-20 Nec Corp Ccd shift register
DE2939403A1 (en) * 1979-09-28 1981-04-16 Siemens AG, 1000 Berlin und 8000 München MONOLITHICALLY INTEGRATED CIRCUIT FOR LINE SCREENING
JPS5665578A (en) * 1979-10-31 1981-06-03 Fujitsu Ltd Two dimensional solidstate image sensor
JPS5685981A (en) * 1979-12-15 1981-07-13 Sharp Corp Solid image pickup apparatus
JPS56104582A (en) * 1980-01-25 1981-08-20 Toshiba Corp Solid image pickup device
JPS56136086A (en) * 1980-03-27 1981-10-23 Fujitsu Ltd Two-dimensional image pickup device
JPS56160081A (en) * 1980-05-14 1981-12-09 Matsushita Electronics Corp Solid state image pickup apparatus
DE3173604D1 (en) * 1981-05-19 1986-03-13 Texas Instruments Inc Infrared imaging system with infrared detector matrix, and method of imaging infrared energy
DE3121494A1 (en) * 1981-05-29 1983-01-05 Siemens AG, 1000 Berlin und 8000 München ARRANGEMENT FOR THE CONTACTLESS MEASUREMENT OF ELECTRICAL CHARGE IMAGES IN ELECTRORADIOGRAPHIC RECORDING METHODS
DE3172696D1 (en) * 1981-06-03 1985-11-28 Texas Instruments Inc Infrared energy detector system utilizing a charge transfer device sensor
JPS586682A (en) * 1981-07-06 1983-01-14 Sony Corp Solid-state image pickup device
JPH02113678A (en) * 1988-10-21 1990-04-25 Nec Corp Solid state image pickup device

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5654115B2 (en) * 1974-03-29 1981-12-23
US3931465A (en) * 1975-01-13 1976-01-06 Rca Corporation Blooming control for charge coupled imager
JPS5937629B2 (en) * 1975-01-30 1984-09-11 ソニー株式会社 solid-state imaging body
US3953733A (en) * 1975-05-21 1976-04-27 Rca Corporation Method of operating imagers
JPS5846905B2 (en) * 1975-11-10 1983-10-19 ソニー株式会社 Kotai Satsuzou Sochi
JPS52109825A (en) * 1976-03-11 1977-09-14 Sony Corp Solid state pick up unit

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4733406A (en) * 1981-09-17 1988-03-22 Canon Kabushiki Kaisha Image sensing charge coupled device
EP0103023A4 (en) * 1982-02-19 1986-01-07 Sony Corp Solid-state image pickup device.
EP0103023A1 (en) * 1982-02-19 1984-03-21 Sony Corporation Solid-state image pickup device
US4716466A (en) * 1984-05-31 1987-12-29 Fujitsu Limited Image sensor
EP0163547A2 (en) * 1984-05-31 1985-12-04 Fujitsu Limited Image sensor
EP0163547A3 (en) * 1984-05-31 1987-04-29 Fujitsu Limited Image sensor
EP0185343A1 (en) * 1984-12-19 1986-06-25 Kabushiki Kaisha Toshiba Charge transfer device
US4721989A (en) * 1984-12-19 1988-01-26 Kabushiki Kaisha Toshiba CCD with transfer channel at lower potential than supply channel
EP0227133A1 (en) * 1985-11-25 1987-07-01 B.V. Optische Industrie "De Oude Delft" Image-recording equipment for digital radiography
US4984044A (en) * 1986-03-25 1991-01-08 Sony Corporation Solid state imager device
FR2668608A1 (en) * 1990-06-21 1992-04-30 Loral Fairchild Corp NON-LINEAR PHOTOSITY RESPONSE IN CCD IMAGERS.
WO1992022091A1 (en) * 1991-06-07 1992-12-10 Eastman Kodak Company Enhanced exposure latitude of image sensor having lateral overflow drain
FR2687265A1 (en) * 1993-01-08 1993-08-13 Scanera Sc Electronic image acquisition device with very high dynamic range, and method of acquiring images of very highly contrasted scenes

Also Published As

Publication number Publication date
GB2007937B (en) 1982-03-03
CA1125421A (en) 1982-06-08
JPS5451318A (en) 1979-04-23
DE2842346C2 (en) 1987-05-14
NL7809866A (en) 1979-04-02
FR2409646B1 (en) 1983-11-18
DE2842346A1 (en) 1979-04-12
FR2409646A1 (en) 1979-06-15

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee