JPS5665578A - Two dimensional solidstate image sensor - Google Patents

Two dimensional solidstate image sensor

Info

Publication number
JPS5665578A
JPS5665578A JP14232379A JP14232379A JPS5665578A JP S5665578 A JPS5665578 A JP S5665578A JP 14232379 A JP14232379 A JP 14232379A JP 14232379 A JP14232379 A JP 14232379A JP S5665578 A JPS5665578 A JP S5665578A
Authority
JP
Japan
Prior art keywords
layer
signal charge
shift register
charge
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14232379A
Other languages
Japanese (ja)
Inventor
Yoshihiro Miyamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14232379A priority Critical patent/JPS5665578A/en
Publication of JPS5665578A publication Critical patent/JPS5665578A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04NPICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00Circuitry of solid-state image sensors [SSIS]; Control thereof

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

PURPOSE:To enable high speed readout and to increase the utilizing factor of photosensing plane, by making the carrying CCD shift register group unnecessary and forming the part with the impurity dope layer of reverse conduction type and the semiconductor substrate constituted with the sensor. CONSTITUTION:The photodetection plane is formed with a plurality of carrying gates GT of band shape and the impurity dope layer D of opposite conduction type as the substrate mainly. Further, if the applied voltage of a vertical shift register 2 to a terminal is zero, the well beneath each video element group is disappeared and the signal charge group stored in it is moved in the layer D via each channel at a bundle. A signal charge Qs is superimposed on the charge Qt in thermal equilibrium state in the layer D as excessive charges. When a voltage is fed to a readout gate GR, the signal charge group Qs in the layer D is fed to each stage in the CCD shift register B at a bundle. Since the transfer of the charge Qs is made in dielectric buffer time in the order of 10<-13>sec, the transfer time of the signal charge can be made short.
JP14232379A 1979-10-31 1979-10-31 Two dimensional solidstate image sensor Pending JPS5665578A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14232379A JPS5665578A (en) 1979-10-31 1979-10-31 Two dimensional solidstate image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14232379A JPS5665578A (en) 1979-10-31 1979-10-31 Two dimensional solidstate image sensor

Publications (1)

Publication Number Publication Date
JPS5665578A true JPS5665578A (en) 1981-06-03

Family

ID=15312668

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14232379A Pending JPS5665578A (en) 1979-10-31 1979-10-31 Two dimensional solidstate image sensor

Country Status (1)

Country Link
JP (1) JPS5665578A (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52137210A (en) * 1976-05-12 1977-11-16 Matsushita Electric Ind Co Ltd Solid taking image device
JPS5451318A (en) * 1977-09-29 1979-04-23 Sony Corp Solid pickup unit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS52137210A (en) * 1976-05-12 1977-11-16 Matsushita Electric Ind Co Ltd Solid taking image device
JPS5451318A (en) * 1977-09-29 1979-04-23 Sony Corp Solid pickup unit

Similar Documents

Publication Publication Date Title
JPS5856458U (en) Color solid-state imaging device
JPS57162364A (en) Solid state image pickup device
GB1394520A (en) Charge coupled device area imaging array
KR940004860A (en) CCD shift register
JPS5339061A (en) Production of semiconductor device
JPS5324789A (en) Production of semiconductor device
JPS5665578A (en) Two dimensional solidstate image sensor
JPS5552675A (en) Solid state pickup device
JPS54114922A (en) Two dimentional pick up element and its drive
GB1470587A (en) Linear imaging arrays
JPS57136873A (en) Charge-transfer type solid-state image pickup device
US5313080A (en) Structure of a CCD image sensor particularly on an interline transfer method
GB1453341A (en) Charge-coupled linear imaging device
Kimata et al. A 256× 256-element Si monolithic IR-CCD sensor
JPS57173273A (en) Solid-state image pickup device
JPS5525218A (en) Solid state pickup device
JPS5646373A (en) Linear image sensor
GB1529489A (en) Optoelectronic sensor arrangements
GB1480761A (en) Chargecoupled area array
JPH04257263A (en) Solid-state image sensing device
JPS57109475A (en) Solid image pickup element
JPS5690681A (en) Two-dimensional solid-state image pickup device
JPS5679581A (en) Two dimensional solidstate image sensor
JPS57185774A (en) Solid-state image pickup device
JPS5745971A (en) Image pickup device for solid state