DE2842346A1 - IMAGE SCANTER IN SOLID TECHNOLOGY - Google Patents

Description

Sony Corp. TER MEER MÜLLER STEINMEISTER S78P147

- 7 DESCRIPTION

The invention relates to a solid state image sensing device, the charge coupled image transducer elements and hereinafter also referred to by its English abbreviation as CCD (= Clharge C_oupled E) evice) are. In particular, the invention relates to a solid-state image scanning device - hereinafter also referred to as an "image sensor" denotes - for a so-called interlaced transfer system.

The structure of a conventional CCD solid-state image sensor with interlaced transfer is shown in FIG. 1: On a common A semiconductor substrate, for example made of silicon, is a plurality of light receiving sections, i.e. H. Sensor areas 1, which are aligned as picture elements in two directions by columns and rows, namely in the horizontal direction and in the vertical direction perpendicular thereto. A vertical shift register 2 - also in CCD design - lies outside along one side of each sensor area 1 in the vertical direction, and a CCD horizontal shift register 3 is arranged in common for each vertical shift register 2 along one end side. In television video image signal generation for example, the during the vertical blanking interval are dependent on the amount of incident light in the sensor areas 1 generated signal charges are transferred to the associated vertical shift register 2, while in each horizontal blanking interval the individual signal charges in each of the vertical shift registers 2 sequentially be overwritten in the horizontal shift register 3. The resulting signal charge is in each of the horizontal frame intervals read out via an output t on the horizontal shift register 3. In this case, the charge is transferred from each sensor area 1 of the vertical sliding register 2, for example, in every other horizontal line, and during an even-numbered picture or field interval

909815/0841

Sony Corp. • | l "R MEER · MDLLHH · STEINMEISTER S78P147

the signal is read out in each of the sensor areas 1 for every second horizontal line. During an even Frame or field interval, on the other hand, the signal in each sensor area is 1 for the remaining (also in each case every other) horizontal lines read out. This means that the read-out takes place in leaps and bounds or "nested".

However, even in such a solid-state image sensor, a so-called gamma ( T) correction is desired in order to ensure a certain relationship between the light incident on the image sensor areas and an electrical output signal. As a y correction method, for example, the excess electrical charges can be used to divert the excess electrical charges into an "overflow sink or an" overflow "drain area, which can be controlled in order to avoid overexposure. In this case, an electrode is used to control a potential barrier or a potential wall between the sensor area and the overflow sink in order to control the amount of excess charge and to effect the desired 9 "correction. This electrode is independent of the other electrodes, associated with the difficulty that an additional conductive layer has to be produced, with the result that an already relatively complicated semiconductor structure becomes additionally complex and great manufacturing difficulties arise.

It is therefore an object of the invention to provide a solid-state image scanning device to create which can be produced comparatively easily and in which one is controlled / "- Correction is possible to avoid excessive, ie excessive dissipate electrical charges to an overflow drain region.

A solution to this problem according to the invention is specified in claim 1. An alternative solution according to the invention is contained in claim 10 =

9Ö981S / Q841

Sony Corp. TER MEER MÜLLER STEINMEiSTER S78P147

2847346

Advantageous further developments of the inventive concept are characterized in subclaims.

As mentioned above, the invention is primarily directed to one Solid-state image scanning device directed with interline or interlaced transfer and has an integrated Overflow sink. The semiconductor substrate includes a plurality of sensor areas which, arranged according to rows and columns, occupy a substantial part of the semiconductor wafer. A shift register is arranged on one end side of the sensor areas, while the overflow sink is on the other Side of the line sensor areas is formed. A transfer electrode covers part of the shift register, and a carry gate area lies between the picture elements and the shift register and is used when the signal charge is transferred into the Shift register with a clock voltage applied to during the horizontal blanking gaps at the transfer gate area to create a potential wall. A sensor electrode jointly covers the sensor area and an overflow control area lies between the sensor area and the overflow sink. The sensor electrode is in at certain times applied to the selected horizontal blanking intervals with certain voltage values. This on the sensor electrode lying voltage values gradually rise and lead during the selected horizontal blanking intervals to the desired V-correction.

The invention and advantageous details are described below in exemplary embodiments with reference to the drawing explained in more detail. Show it:

1 with a schematic representation of the structure of a solid-state image scanning device already explained Interline or interlace carry; 35

Fig. 2 is a plan view of an essential part of a

Embodiment for a solid-state image scanning

809816/0841

Sony Corp. TER meer · möller ■ stein.vjeister S78P147

- 10 device according to an invention;

3 and 4 show the greatly enlarged schematic cross-sectional illustration seen in the direction of the arrows on the section lines III-JII and VI-VI in Fig. 1;

Fig. 5 is a graph showing the relationship between a voltage between a sensor area and is supplied to an overflow control region and a minimum potential;

6A, 6B and 6C show the time-related representation of voltage pulses for explaining the mode of operation of the invention;
15th

7 to 9 potential diagrams for explaining individual operating modes of an image sensor according to the invention;

10 is a diagram for explaining a storage charge in the sensor area at individual points in time for changes

tion of the light intensity irradiated on the image sensor;

Figure 1 shows a 'J' correction curve and
25th

12 shows the course of a minimum potential in a graphical representation with automatic setting of the sensitivity.

In one of the similar ones discussed above with reference to FIG Solid-state image sensor according to the invention, a common semiconductor substrate is used on which a number of sensor areas 1, i. H. Light receiving areas arranged in horizontal rows and vertical columns is. There are also vertical shift registers 2 and a horizontal shift register 3.

Θ09815 / 0841

Sony Corp.

TER MEER · MÜLLER ■ STEINMEISTEP S78P147

- 11 -

The special features of the invention will now be described with reference to FIGS. 1 to 4 by way of example and without restriction of the inventive concept explained:

Fig. 2 shows a part of an image sensor in which the sensor areas 1 and an essential part assigned to them is shown, while - as mentioned - FIGS. VI-VI in Fig. 2 _} illustrate. In these figures, reference 4 denotes a semiconductor substrate, for example a silicon substrate with P conductivity, which is covered on the surface with an insulation layer 5, for example an SO ^ layer. In the example illustrated in the figure, the vertical shift register is designed as a countersunk K.ma].

For this purpose, an N-conductor is used during manufacture Area 6 is designed in the form of a strip or band over the main surface 4a in order to obtain the shift register 2. A Channel delimiter region 7 with the substrate 4 corresponding Conductivity is generated in a high concentration of impurities in the substrate 4 around the adjacent sensor areas 1 separated from each other and also from shift register 2, what is indicated in Fig. 2 hatched; these areas 7 are also aligned with the main surface 4a. An overflow control area 8 with the conductivity corresponding to the substrate 4 is also transmitted via the main surface 4a in the substrate 4 generated, and an overflow drain or well region 9 with N-conductivity and higher from the substrate 4 different Impurity concentration becomes adjacent to each of the sensor areas 1 through the overflow control area 9 generated. In addition, a gate area is created in the substrate 4 between each sensor area 1 and the associated shift register 2 10 generated with P conductivity.

809815/0841

BATH ORIGINAL

Sony Corp.

TER SEA · MC ¹ CLOCK. STEINMEiSTER S78P14 7

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Each shift register 2 consists of a carry area 11, which is present in the vertical direction in alignment with each associated sensor area 1. In the example shown the vertical shift register 2 is of the two-phase clock type. In this case, there is any carry-over area of, for example, a part with a relatively thin insulating layer 5A and a part of a thick insulating layer 5B includes. Electrodes 12A and 12B, which act as a so-called carry gate, are produced on the insulating layers 5A and 5B 13A and a memory area 13B, respectively. The two electrodes 12A and 12B in the transfer area 11 are electrical tied together.

In the example shown in FIG. 4, the insulation layers are 5A and 5B below electrodes 12A and 12B in FIG Thicknesses formed different from each other in order to avoid a difference between the potential depths at the transfer gate 13A and im To achieve storage area 13B of the vertical shift register 2. The different potential depth can, however can also be achieved by different impurity concentrations instead of the formation of different ones Layer thicknesses for the insulation layers. In this the second case are the insulating layers 5A and 5B under the transfer and storage electrodes 12A and 12B, respectively the same, but in this case a flat P-type area is provided under the transfer electrode 12A. This P-range can be achieved, for example, by selective ion implantation be generated.

The gate area 10 between each of the sensor areas 1 and the associated vertical shift register 2, which has a conductivity corresponding to the substrate 4, for example, is formed by an area in the substrate 4 which has a higher concentration of impurities than the substrate 4 and on its main surface 4a is aligned. _{The insulation layer 5?} Extends over the upper surface of the area 14. for example the

903815/0841

Sony Corp. TER MEER MÜLLER STEINMEISTER S78P14 7

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Insulation layer 5B, which is covered by gate electrode 15 is. The gate electrode 15 of the gate region 10 corresponding to each of the sensor regions 1 and the electrodes 13A and 13B of each carry area 11 in the vertical shift register 2 are generated jointly, as indicated in FIG. 2 by a dash-dotted line a, or are electrically connected to each other in order to be able to supply a common voltage. In this case, the impurity concentrations of areas 10 and 11 or the thicknesses of the insulation layers selected so that the minimum potentials are always "flat" in the gate area, see if the electrodes assigned to the areas 10 and 11 with the the same voltage can be applied. Connections tr., And tr "are alternating with the next but one transfer areas 11 connected.

The overflow control region 8 has, for example, the conductivity type corresponding to the substrate 4, but with a higher conductivity Impurity concentration and is also aligned with the main surface 4a. A control electrode 17 lies above the insulation layer 5 on the area 16.

The sensor areas 1 are formed by a sensor electrode 18 over the insulation layer 5, through which light passes. The sensor electrode 18 and the control electrode 17 of the associated overflow control area 8 consist of a continuous transparent common electrode or are electrically connected to each other and are connected via a terminal t has a common voltage applied to it.

The respective areas 6, 7, 9, 14 and 16 can by means of a known technique, for example by means of a selective diffusion process, by ion implantation or similar. The individual electrodes 15, 12A and 12B are made by selective deposition of polycrystalline Silicon layers are produced, which have a low level of

109815/0841

Sony Corp.

TER MEER · MÖLLER · STEINMEISTER S78P14 7

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received resistance. The application can be done by a chemical vapor deposition process Isolation layers are preferably created by oxidizing the surfaces of these layers, and the transparent electrode, which forms the sensor electrode 18 and the overflow control electrode 17, covers the insulation layer 5. A light-shielding layer 19 covers all areas except the sensor areas 1. This shielding layer 19 is made of aluminum, for example. In this case, a conductive shielding layer covers the insulation layer present on the respective electrodes

As mentioned above, according to the invention, the sensor electrode 18 of each sensor section and the control electrode 17 of the corresponding overflow control area 8 in electrical Respect trained together. On condition that the common voltage is applied to both electrodes 17 and 18, a difference occurs between the minimum potentials at sensor area 1 and at the overflow control area on. In the example shown, the minimum potential will occur on every surface that is equal to the surface potential matches. This potential difference changes with the applied voltage. In the case of the above For example, the surface contamination concentration of the sensor area 1 is the same as that of the substrate 4, and the surface impurity concentration of the overflow control portion 8 is set higher than that of the Sensor area 1. For this case, with the same layer thickness of the respective insulation layers 5 of 0.3 μm Sensor area 1 or on the overflow control area 8, the surface contamination concentration of the sensor range 1

14 -3
for example 5 χ 10 cm and that of the control area

15 _3
selected to 5 χ 10 cm, so that - if the respective surface potentials -f and -t result when the voltage 0 is applied to the sensor or control electrode 17 or 18 at the terminal t - the potential difference between

809815/0841

Sony Corp.

TER SEA ■ MÜLLER · STEINMEISTEP S78P14 7

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~ f and "f becomes large with increasing voltage 0, as can be seen from the curves 20 and 21 of the illustration of FIG. 5. In the above example, the surface contamination concentrations of the sensor area 1 and the control area 8 are selected so that there is a difference In some cases, however, it is possible that the sensor area 1 and the control area 8 are designed with a constant surface impurity concentration and the thicknesses of the insulation layers under the electrodes 18 and 17 of the sensor area 1 and the control area 8 are selected differently, even if the surface concentration is different, and in such a way that the thickness of the insulation layer of the sensor area 1 is less than that of the control area 8.

15th

As will be explained below, the difference ( ~ y ~ ~ f) between the surface

S C

Potentials at the overflow control area 8 and at the sensor areas 1, d. h- the height of the potential wall or the potential barrier between the sensor areas 1 with control area 8 and the overflow sink 9 changes as a function on the size of the voltage applied to terminal t

voltage 0, so that the overflowing amount of charge carriers from the sensor areas 1 can be controlled.

25th

For reasons of better understanding of the later explanation, the sensor areas 1 in Fig. 2 in each horizontal line successively with S ₁ , S ₀ , S ^, and the transfer areas 11 of the

the vertical shift register 2 with T ₁ , T ₉ , T-., loading

draws. The electrodes of every second transfer area, ie for T ₁ , T_, T ₅ , are connected to the terminal t .., while the remaining, likewise second transfer areas, ie T ₂ , T ₄ , Tg, are connected together to the

Terminal t _{2 are} connected.

B00816 / 0841

Sony Corp. TER MEER MÜLLER STEINMEISTEP S78P147

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In the following we d the mode of operation of the so far described solid-state image scanning device according to the invention explains:

During the vertical blanking interval or the image blanking interval, the signal charges corresponding to the amount of light incident are transferred from the sensor areas 1 to the assigned transfer areas 11 of the vertical shift register 2, which is referred to below as "read out". _{The terminals t 1 and t 1 of} the vertical shift register 2 are acted upon by two-phase clock pulses 0 1 and 0 2, which is shown in FIGS Transfer area to transfer, ie to overwrite the signal charge during each horizontal line in the horizontal shift register 3 shown in FIG. The signal for each horizontal line is then interrogated via terminal t during the horizontal scanning interval.

7 to 9 illustrate the course of minimum potentials in the individual areas of FIG Memory area 13B is denoted by J ,,, f, ^ f, -f and · $, and the potentials at voltages applied are each differentiated by an index number if they are identified accordingly. 7 illustrates the relationships in the operating mode light reception and storage. In this case, the terminal t is supplied with a voltage of such magnitude that a deep potential well occurs at the sensor area 1, ie a high positive voltage 0. At the time t of the vertical blanking interval that the

S O

Corresponds to the beginning of an odd-numbered field interval, the voltages 0 .. and 0 ^ _? chosen as positive fixed-level voltages, as in Figs

909815/0841

Sony Corp. TER MEER · MÜLLER ■ STEINMEISTEP S78P147

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6A and 6B indicated. In this case the den

Terminal t applied voltage 0 lowered what s s

leads to the minimum potential (see Fig. 8), so that the potential well of the sensor area 1 becomes sufficiently shallow (see potential J _s -t) r while the potential well in the storage area of the transfer section 11, which corresponds to the sensor area 1, becomes sufficiently deep ( see. potential j are ₂₎ · ^A l ^s a result, the function of the incident light amount in the individual sensor fields

S ₁ , S- / S ₃ , generated and stored signal charges (charge carriers) are transferred or read out into the storage areas of the transfer areas T. ,, T “, T, what

is indicated in Fig. 8 by an arrow b. During the vertical blanking interval, for example, the voltage 0 "at terminal t" is kept at the above-mentioned positive voltage, and the voltage 0 ₁ supplied at terminal t .. is lowered, for example to 0 volts, as in FIGS 6B clarifies. This means that the individual charges for every second transfer area T ₁ ,

T, T ₅ , into the remaining carry-over areas T ", T.,

T _fi , overwritten, ie the charges of each

two carry-over areas are added together. In other words: The signal charges on each of the sensor areas S ₁ , S ^, S, are those on the neighboring

th sensor areas S ₂ , S, S, superimposed. The charges are then transferred to the horizontal shift register in the usual manner in the vertical and horizontal blanking intervals, but according to the invention a T correction is carried out for a certain number of selected horizontal blanking intervals. In FIG. 6, a pulse P and further pulses in the horizontal blanking intervals are supplied to the connections t .. and t ″ for charge transfer. Since the duration of the impulses is only indicated schematically in the selected representation, the length of the vertical blanking intervals etc. is not exactly correct. In other words: the connections t .. and t ₂ during the horizon-

90981B / 08U

Sony Corp. TER MEER MÖLLER STEINMEISTER S78P147

- 18 -

The voltages supplied to the valley blanking interval are both low, for example at 0 volts, while the potential barrier J is _{between each of the transfer areas T, T, T, and each of the sensor areas S 1} , S _{9, S}

relatively high value 3 (see. Fig. 9) occurs. In assigned Times t ^, t, t_, within the ho-

Terminal t becomes rizontal blanking interval with voltages

0 .., 0 ₂ , 0 -., Acted upon, the stepwise in the

Sequence 0 -, <0 η ^ $ 3 ···· occur, as can be seen in FIG. 6C. The potentials §

Sensor areas S., S, S become flatter (cf.

9), and the potentials at the overflow control region 8 reach the values "j. ,, " fo ' ^ v (see also FIG. 9). In this case, since the supplied voltage reaches a high value, the potential difference between the sensor area and the overflow control area, that is, the potential wall, becomes high as mentioned above in connection with FIG. 5. As a result, the excess charge is reduced.

20th

This is considered below with reference to FIGS. 9 and 10 for the case where the incident light has an intensity of I owns. In this case, a charge q. excess first charges into the overflow sink transferred or sucked out so that the sensor area stored charges reach the saturation state at q. correspond. The amount of charge q. is determined by the difference between the potential -f. in the sensor area if the

^{J s4} dftMjjfc, _o

Voltage 0. at connection t and Oas potential 3 is applied to the overflow control area. Subsequently, at time t .. during the selected horizontal blanking interval at connection t. a relatively low voltage 0 _{1 is} supplied, so that the _{charges exceeding a charge quantity q 1} - determined by the difference between the potential j _s -i ^{at the} sensor area and the potential ■ £

909816/0841

Sony Corp.

TER MEER · MÜLLER ■ STEINMEISTER S78P147

- 19 -

at the overflow control area. The terminal t supplied voltage is in turn, so that I. occurring charge is stored in a sensor area as a function of the amount of light of f by the difference between the potential of "J, the sensor area and that potential. 0 is determined at the overflow area is Excess charges exceeding the amount q. Are thus transported into the overflow sink. At time t "within another selected horizontal blanking interval, a voltage O _{2 is applied to terminal t g} , which is higher than the previous voltage 0. . So that the amount of charge q ~ - determined by the difference between the potential "] ₂ ^{at the} sensor area and the potential ^ f ₂ at the overflow control area - excess charges are transferred into the overflow sink. Thereafter, the terminal is again the voltage 0 is supplied and a corresponding charge t stored. At a point in time t_ within a third selected horizontal blanking interval, the connection t _s has the voltage 0 _ applied to it, which is higher than the voltage 0 ₂ , so that again charges exceeding the charge amount q are sucked off. The connection t is then again connected to the voltage 0. placed so that the charges are stored according to the incident light. At time t. The charges are finally read out within the vertical blanking interval.

If light strikes the image sensor with an intensity I corresponding to the relation I_ <I ₁ <I "<I ₃ <I. occur in sensor area 1 at times t _Q , t .., t ₂ , t ₃ and t ₄ charge quantities q, which are considered below: As FIG. 10 shows, they flow at times t ₁ , t ₂ , t ₃ and t. occurring excess charges, which the amount of charge q. _{,, q 2} , q-. and q. in the sensor area 1 at these points in time, so that the amounts of charge corresponding to the light with the intensity I can be represented as an exponential function, as in FIG. 11

909815/0841

Sony Corp. TER Meer · Müller ■ steinmeistep S78P147

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shows, from which the T-correction can be seen. If an amount of light with an intensity of I _n that is lower than an intensity I (cf. FIGS. 10 and 11) hits, the amount of charge stored in the sensor area can be read over a distance 1. If light strikes with the intensity of I., which is between the intensity values I and I ₁ , the amount of charge stored in the sensor area can be read _{from the path I 2.} The other sections 1, 1, ... illustrate the charge quantities in the corresponding sensor areas in an analogous manner.

The 7 "correction can be used for the next following field for even lines in a similar way.

In the case of the field for even-numbered lines (cf. also FIG. 6 here), the corresponding

Sensor areas S ₁ , S ₂ , S ₃ in the carry-over areas

T ₁ , T ₂ , T- ,, of the vertical shift register in FIG

Vertical blanking interval, which corresponds to the beginning of the "even-numbered" field and, in contrast to the case of the "odd-numbered" field considered above, a voltage of 0 volts is supplied, and the charges stored _{in the sensor areas S 2} , S ₃ , S _{4 are applied} those

of the neighboring sensor areas S ₁ , S ₂ , S,

added; this combination is obviously chosen to be different from the odd-numbered field. In the even-numbered field or "field" _{, a picture element signal is generated by the combination of the sensor areas S 1} and S ₃ , S ₃ and S ₄ , S ₅ and Sg, while in an odd-numbered field or "field" the other combination is selected for each picture element , namely the combination of the sensor areas S ₂ and S ₃ , S ₄ and S, S_ and S ^, In this way, an image (a full frame) is composed of two fields to give the same effect as the above-mentioned interleaving achieve.

909818/0 * 41

Sony Corp.

TER MEER MÜLLER STEINMEISTEP S78P14 7

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If an adjustment of the sensitivity is desired, see above the width of the overflow control area 8 is selected to be correspondingly narrower and the bias potential for the overflow sink 9 is placed correspondingly deep, like that Fig. 12 shows, in order to achieve the desired overflow control, i.e. H. the excess charge carriers in the sensor area 1 suction into the overflow sink. If a large bias potential is applied to the overflow sink 9, so the signal charge generated in the sensor area 1 is transported into the overflow sink 9 and thus no longer stored in sensor area 1. The time interval for charge carrier storage can thus be dependent on shorten on the amount of incident light.

As described above, the invention does not and does not require an independent electrode at the overflow control area nevertheless achieve a good correction, so that the difficulties explained above with the relatively complicated Applying the electrodes are eliminated, which has previously led to significant manufacturing problems. With the Invention can not only increase the reliability, but also the yield of perfect image converter elements in series production is much better.

Another advantage results from the following: Since the charges in all sensor areas S ₁ , S _{1, S 3} , at the beginning

each corresponding field are read out, all problems are eliminated with the invention, which so far from so-called residual images, d. H. since, in known image converter devices, the charges from each sensor area are within each field or field are read out, an incidence of light is registered for two fields, as light is recorded by the sensor areas in a field interval during which the other sensor areas are read out will. The residual image problem thus arises, which is caused by the novel storage and readout method according to Invention is completely eliminated.

90981E / 0841

Sony Corp. TER MEER MÖLLER STEINMEISTER S78P147

- 22 -

In the embodiment of the invention described above, the sensor electrode is produced together, and the Signal charges in the individual sensor areas are read out in each field. However, it is for some use cases also possible, the sensor electrode accordingly

the combination of the sensor areas S ₁ , S ,, S _1. , and

S-, S ₄ , S _fi , to be subdivided, that is to say to summarize in each case leaving an intermediate line free, and to read out the other sensor areas in each of these fields.

80981 5/084 t

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Claims (14)

PATENTANWÄLTE TER MEER - MÜLLER - STEINMEISTER D-8000 Munich 22 D-4800 Bielefeld Triftstraße 4 Siekerwall 7 Case S78P147 September 28, 1978 Mü / tr SONY CORPORATION 7-35, Kitashinagawa 6-chome Shinagawa-ku, Tokyo, Japan Image scanner in solid state technology priority : September 29, 1977, Japan, CLAIMS No. 126885/77 1. Image scanning device in solid state technology with a) a semiconductor substrate (4), b) a plurality of sensor areas (1; S ", S ₉ , S-, ...) which are arranged in rows and columns and occupy defined sections of the substrate, each of which is able to store a specific signal charge during a defined period of time , c) a shift register formed on partial areas of the substrate and assigned to each row of the sensor areas (2), 909815/0841 Sony Corp. TER Meer - Möller ■ Steinmeister S78P147 d) an overflow depression (9) formed on a partial area of the substrate, which forms each row of the sensor areas assigned and on the opposite of the shift register with respect to the relevant row of sensor areas Side lies; e) a first device which operates between the sensor area and the shift register during fixed intervals forms a first potential wall for the signal charges within the specified time period, marked by f) a second device (11) which _{forms a second potential wall between the sensor areas (1; S 1} , S ₂ , S ₃ , ...) and the overflow sink (9) for the signal charges, which during the predetermined time period is lower than the first potential wall and forms a potential well for storing the signal charges at the sensor areas, the amount of the signal charges storable in the potential well being determined by the second potential wall and the potential well, and by g) a third device contained in the second device, the second potential wall and the potential well so stipulates that the amounts of the signal charges stored in the sensor areas for Zeitab cuts sequentially within xintermittent intervals selected from the specified time periods increase. 2. Image scanning device according to claim 1, characterized in that the first device has an electrode which is electrically insulated from the substrate and which covers a portion of the surface of the substrate between the sensor area and the shift register and is intended to supply a fixed voltage » 90981S / 084 Sony Corp. TER MEER - MÜLLER STEINMEISTER S78P1 47 3. Image scanning device according to claim 1, characterized characterized in that the second device comprises an electrode electrically isolated from the substrate having a portion of the surface of the substrate between the sensor areas and the overflow sink covered and intended to supply a specified voltage. 4. Image scanning device according to claim 1, characterized ■ \ Q characterized in that the specified Period corresponds to a vertical scanning interval of a television signal. 5. Image scanning apparatus according to claim 1, characterized marked that the specified Interval corresponds to a horizontal blanking interval of a television signal. 6. Image scanning device according to claim 2, characterized characterized in that the electrode together with an electrode for the shift register has been trained. 7. Image scanning device according to claim 3, characterized in that the surface impurity concentration of the substrate is different in the sensor area and in the overflow control area. 8. Image scanning device according to claim 3, dva by characterized in that an insulating layer between the surface of the substrate and the Electrode is formed, the thickness of which is at least in the sensor area and is different in the overflow control area. 909815/0841 Sony Corp. TER MEER MÜLLER STEINMEISTER S78P147 9. Image scanning device according to claim 1, characterized by a device for feeding a certain voltage to the overflow sink to avoid the second potential wall. 10. Image scanning device in solid state technology with a) a semiconductor substrate, b) a plurality of defined areas of the semiconductor substrate occupying picture elements used to store signal charges for a specified period of time are determined and aligned according to rows and columns, c) a partial area of the substrate and each row of the picture elements via carry gate areas assigned shift register, d) a portion of the substrate occupying and overflow control area of each row of the picture elements associated overflow sink area on the opposite side of the with respect to the picture elements Shift register, e) one which is electrically isolated from the substrate and covers part of the shift register and the carry gate area Transfer electrode for the shift register, characterized in that f) a sensor electrode (18), which is electrically insulated from the substrate and the transfer electrode, is provided Picture elements (1) and the overflow control areas (8) covered, g) a voltage is applied to the transfer electrode in order to create a potential wall during defined intervals to generate at the carry gate area, h) the sensor electrode is set intermittently during a plurality of time periods within Periods of time selected intervals with certain voltage values is applied, the time segments are within the selected intervals, 909818/0841 Sony Corp. TER MEER · MÜLLER ■ STEINMEISTER S78P147 i) a device is provided which is attached to the picture elements and the overflow control region generates a potential difference which is an amount of one Specifies the signal charge, which is stored by applying the specified voltage to the relevant picture element shall be, k) the specified voltages are chosen so that the amount of signal charges caused by a first Voltage to be stored at an earlier point in time at the relevant picture element is smaller than that Amount of signal charges that will be stored by the picture element at a later point in time should, and that 1) the sensor electrode is to be subjected to a voltage which forms a potential well on the picture element causes to signal charges during the remaining time within the time segment of the specified Save period. 11. Image scanning device according to claim 10, characterized in that the device for generating a potential difference by selecting a different surface contamination concentration of the substrate at the picture elements or at the overflow control area.
25th 12. Image scanning device according to claim 10, characterized in that the device by a different thickness between the surface of the substrate and the sensor electrode in the Area of the picture elements or in the area of the overflow control area given is. 9Q981S / 0841 Sony Corp. TER MEER MÜLLER STEINMEISTER S78P147 13. Image scanning device according to claim 10, characterized in that that the specified period corresponds to the vertical scanning interval of a television signal. 14. Image scanning device according to claim 10, characterized in that the fixed interval with the horizontal blanking interval of a television signal.