KR930015026A - Ccd 영상소자 및 제조방법 - Google Patents

Ccd 영상소자 및 제조방법 Download PDF

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Publication number
KR930015026A
KR930015026A KR1019910023878A KR910023878A KR930015026A KR 930015026 A KR930015026 A KR 930015026A KR 1019910023878 A KR1019910023878 A KR 1019910023878A KR 910023878 A KR910023878 A KR 910023878A KR 930015026 A KR930015026 A KR 930015026A
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KR
South Korea
Prior art keywords
ccd imaging
film
manufacturing
light receiving
imaging device
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Application number
KR1019910023878A
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English (en)
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KR100259062B1 (ko
Inventor
윤성혁
Original Assignee
문정환
금성일렉트론 주식회사
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Application filed by 문정환, 금성일렉트론 주식회사 filed Critical 문정환
Priority to KR1019910023878A priority Critical patent/KR100259062B1/ko
Publication of KR930015026A publication Critical patent/KR930015026A/ko
Application granted granted Critical
Publication of KR100259062B1 publication Critical patent/KR100259062B1/ko

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)

Abstract

CCD 영상소자의 포토 다이오드위에 반사 방지용막을 형성시켜 포토 다이오드로 부터 반사되는 빛신호를 다시 포토 다이오드로 보낸다.
따라서 빛 신호의 투과율이 극대화되어 신뢰성있는 CCD 영상소자를 제공한다.

Description

CCD 영상소자 및 제조방법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제3도는 본 발명에 따른 제조공정 단면도.

Claims (5)

  1. 광검출 영역상에 반사방지용막이 형성되고 상기 반사방지용막위에 수광용 렌즈가 구비된 것을 특징으로 하는 CCD 영상소자.
  2. 제1항에 있어서, 광검출영역과 반사방지용막 사이에 이들은 격리 보호시켜 주기 위한 보호막이 형성된 것을 특징으로 하는 CCD 영상소자.
  3. 제1항에 있어서, 상기 반사방지용막과 수광용 렌즈사이에는 상기 반사방지용막의 전표면을 평탄화시키기 위한 제1평탄층과 제2평탄층이 형성된 것을 특징으로 하는 CCD 영상소자.
  4. 광검출영역과 수광용 렌즈사이에 반사방지용막을 형성시킴을 특징으로 하는 CCD 영상소자 및 제조방법.
  5. 제4항에 있어서, 반사방지용막은크기의 SnO2를 사용함을 특징으로 하는 CCD 영상소자 및 제조방법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019910023878A 1991-12-23 1991-12-23 Ccd 영상소자 및 제조방법 KR100259062B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019910023878A KR100259062B1 (ko) 1991-12-23 1991-12-23 Ccd 영상소자 및 제조방법

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019910023878A KR100259062B1 (ko) 1991-12-23 1991-12-23 Ccd 영상소자 및 제조방법

Publications (2)

Publication Number Publication Date
KR930015026A true KR930015026A (ko) 1993-07-23
KR100259062B1 KR100259062B1 (ko) 2000-06-15

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ID=19325545

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019910023878A KR100259062B1 (ko) 1991-12-23 1991-12-23 Ccd 영상소자 및 제조방법

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KR (1) KR100259062B1 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100728471B1 (ko) * 2001-04-30 2007-06-13 매그나칩 반도체 유한회사 전위 구배를 갖는 매몰 씨씨디를 구비하는 전하결합소자및 그 제조 방법

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62134966A (ja) * 1985-12-06 1987-06-18 Victor Co Of Japan Ltd インタライン型ccd撮像素子
JPH01107567A (ja) * 1987-10-20 1989-04-25 Mitsubishi Electric Corp 固体イメージセンサ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100728471B1 (ko) * 2001-04-30 2007-06-13 매그나칩 반도체 유한회사 전위 구배를 갖는 매몰 씨씨디를 구비하는 전하결합소자및 그 제조 방법

Also Published As

Publication number Publication date
KR100259062B1 (ko) 2000-06-15

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