FR2358026A1 - Dispositif de transfert a couplage de charge et procede pour sa mise en oeuvre - Google Patents

Dispositif de transfert a couplage de charge et procede pour sa mise en oeuvre

Info

Publication number
FR2358026A1
FR2358026A1 FR7719771A FR7719771A FR2358026A1 FR 2358026 A1 FR2358026 A1 FR 2358026A1 FR 7719771 A FR7719771 A FR 7719771A FR 7719771 A FR7719771 A FR 7719771A FR 2358026 A1 FR2358026 A1 FR 2358026A1
Authority
FR
France
Prior art keywords
transfer device
substrate
implementation
region
charge coupling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7719771A
Other languages
English (en)
Other versions
FR2358026B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2358026A1 publication Critical patent/FR2358026A1/fr
Application granted granted Critical
Publication of FR2358026B1 publication Critical patent/FR2358026B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H01L29/1091—Substrate region of field-effect devices of charge coupled devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
    • H01L27/1057—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components comprising charge coupled devices [CCD] or charge injection devices [CID]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/762—Charge transfer devices
    • H01L29/765—Charge-coupled devices
    • H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76866—Surface Channel CCD

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

L'invention concerne un dispositif de transfert à couplage de charge et un procédé pour sa mise en oeuvre. Ce dispositif de transfert, qui est constitué par un substrat 1, un raccord de substrat 11, une couche isolante 2 et une électrode 3, comporte un dispositif destiné à produire une couche marginale d'appauvrissement, formé par des régions 6, 7 et par une région 4 plus fortement dopée, intercalaire, et qui entoure une région 5 du substrat servant de canal de transmission et située au-dessous de l'électrode et sépare cette région 5 du reste du substrat. Application notamment aux registres à décalage, mémoires et détecteurs optoélectroniques.
FR7719771A 1976-07-06 1977-06-28 Dispositif de transfert a couplage de charge et procede pour sa mise en oeuvre Granted FR2358026A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762630388 DE2630388C3 (de) 1976-07-06 1976-07-06 Ladungsgekoppeltes Halbleiterbauelement, Verfahren zu seinem Betrieb und Verwendung

Publications (2)

Publication Number Publication Date
FR2358026A1 true FR2358026A1 (fr) 1978-02-03
FR2358026B1 FR2358026B1 (fr) 1980-04-04

Family

ID=5982353

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7719771A Granted FR2358026A1 (fr) 1976-07-06 1977-06-28 Dispositif de transfert a couplage de charge et procede pour sa mise en oeuvre

Country Status (7)

Country Link
JP (1) JPS537178A (fr)
BE (1) BE856560A (fr)
DE (1) DE2630388C3 (fr)
FR (1) FR2358026A1 (fr)
GB (1) GB1577653A (fr)
IT (1) IT1084978B (fr)
NL (1) NL7707442A (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2394143A1 (fr) * 1977-06-08 1979-01-05 Siemens Ag Element de memoire dynamique
EP0014388A1 (fr) * 1979-01-25 1980-08-20 Nec Corporation Dispositif semiconducteur à mémoire
EP0058998A1 (fr) * 1979-01-25 1982-09-01 Nec Corporation Dispositif semiconducteur à mémoire
EP0061202A1 (fr) * 1979-02-28 1982-09-29 Nec Corporation Dispositif semiconducteur à mémoire
EP0178030A1 (fr) * 1984-10-12 1986-04-16 Koninklijke Philips Electronics N.V. Dispositif à charges couplées

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58171910A (ja) * 1982-03-31 1983-10-08 松下電工株式会社 無機質化粧体の製法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2394143A1 (fr) * 1977-06-08 1979-01-05 Siemens Ag Element de memoire dynamique
EP0014388A1 (fr) * 1979-01-25 1980-08-20 Nec Corporation Dispositif semiconducteur à mémoire
EP0058998A1 (fr) * 1979-01-25 1982-09-01 Nec Corporation Dispositif semiconducteur à mémoire
EP0061202A1 (fr) * 1979-02-28 1982-09-29 Nec Corporation Dispositif semiconducteur à mémoire
EP0178030A1 (fr) * 1984-10-12 1986-04-16 Koninklijke Philips Electronics N.V. Dispositif à charges couplées

Also Published As

Publication number Publication date
DE2630388C3 (de) 1980-08-07
DE2630388B2 (de) 1979-11-29
FR2358026B1 (fr) 1980-04-04
NL7707442A (nl) 1978-01-10
GB1577653A (en) 1980-10-29
JPS537178A (en) 1978-01-23
BE856560A (fr) 1977-10-31
DE2630388A1 (de) 1978-01-12
IT1084978B (it) 1985-05-28

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Legal Events

Date Code Title Description
ST Notification of lapse