JPS57198656A - Detecter responding to light of predetermined wavelength - Google Patents
Detecter responding to light of predetermined wavelengthInfo
- Publication number
- JPS57198656A JPS57198656A JP57080814A JP8081482A JPS57198656A JP S57198656 A JPS57198656 A JP S57198656A JP 57080814 A JP57080814 A JP 57080814A JP 8081482 A JP8081482 A JP 8081482A JP S57198656 A JPS57198656 A JP S57198656A
- Authority
- JP
- Japan
- Prior art keywords
- detecter
- responding
- light
- predetermined wavelength
- wavelength
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14875—Infrared CCD or CID imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/108—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the Schottky type
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Light Receiving Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US26415681A | 1981-05-15 | 1981-05-15 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS57198656A true JPS57198656A (en) | 1982-12-06 |
Family
ID=23004854
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP57080814A Pending JPS57198656A (en) | 1981-05-15 | 1982-05-12 | Detecter responding to light of predetermined wavelength |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS57198656A (ja) |
DE (1) | DE3217895A1 (ja) |
FR (1) | FR2506077A1 (ja) |
GB (1) | GB2100511B (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS617662A (ja) * | 1984-06-22 | 1986-01-14 | Mitsubishi Electric Corp | 固体撮像素子 |
CN113161442A (zh) * | 2021-04-22 | 2021-07-23 | 合肥工业大学 | 一种硅肖特基结线阵列近红外光电探测器 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5961959A (ja) * | 1982-09-30 | 1984-04-09 | Mitsubishi Electric Corp | 赤外線固体撮像素子 |
US4602158A (en) * | 1984-10-26 | 1986-07-22 | Itek Corporation | PbS-PbSe IR detector arrays |
JPH0644578B2 (ja) * | 1984-12-21 | 1994-06-08 | 三菱電機株式会社 | 電荷転送素子 |
FR2803950B1 (fr) * | 2000-01-14 | 2002-03-01 | Centre Nat Rech Scient | Dispositif de photodetection a microresonateur metal- semiconducteur vertical et procede de fabrication de ce dispositif |
US7026602B2 (en) * | 2001-04-13 | 2006-04-11 | Research Triangle Institute | Electromagnetic radiation detectors having a microelectromechanical shutter device |
DE102007046501A1 (de) * | 2007-09-28 | 2009-04-09 | Siemens Ag | Infrarot-Bildsensor |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5457869A (en) * | 1977-09-26 | 1979-05-10 | Siemens Ag | Charge coupled element |
JPS56155571A (en) * | 1979-09-18 | 1981-12-01 | Secr Defence Brit | Charge transfer device and method of manufacturing same |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3739240A (en) * | 1971-04-06 | 1973-06-12 | Bell Telephone Labor Inc | Buried channel charge coupled devices |
US4210922A (en) * | 1975-11-28 | 1980-07-01 | U.S. Philips Corporation | Charge coupled imaging device having selective wavelength sensitivity |
DE2740996A1 (de) * | 1977-09-12 | 1979-03-22 | Siemens Ag | Sensorzelle fuer einen optoelektronischen sensor |
-
1982
- 1982-05-10 GB GB8213498A patent/GB2100511B/en not_active Expired
- 1982-05-12 DE DE19823217895 patent/DE3217895A1/de not_active Ceased
- 1982-05-12 JP JP57080814A patent/JPS57198656A/ja active Pending
- 1982-05-14 FR FR8208511A patent/FR2506077A1/fr active Granted
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5457869A (en) * | 1977-09-26 | 1979-05-10 | Siemens Ag | Charge coupled element |
JPS56155571A (en) * | 1979-09-18 | 1981-12-01 | Secr Defence Brit | Charge transfer device and method of manufacturing same |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS617662A (ja) * | 1984-06-22 | 1986-01-14 | Mitsubishi Electric Corp | 固体撮像素子 |
CN113161442A (zh) * | 2021-04-22 | 2021-07-23 | 合肥工业大学 | 一种硅肖特基结线阵列近红外光电探测器 |
CN113161442B (zh) * | 2021-04-22 | 2022-10-14 | 合肥工业大学 | 一种硅肖特基结线阵列近红外光电探测器 |
Also Published As
Publication number | Publication date |
---|---|
GB2100511A (en) | 1982-12-22 |
DE3217895A1 (de) | 1982-12-02 |
GB2100511B (en) | 1985-02-27 |
FR2506077B1 (ja) | 1985-01-04 |
FR2506077A1 (fr) | 1982-11-19 |
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