JPH0522383B2 - - Google Patents

Info

Publication number
JPH0522383B2
JPH0522383B2 JP58076449A JP7644983A JPH0522383B2 JP H0522383 B2 JPH0522383 B2 JP H0522383B2 JP 58076449 A JP58076449 A JP 58076449A JP 7644983 A JP7644983 A JP 7644983A JP H0522383 B2 JPH0522383 B2 JP H0522383B2
Authority
JP
Japan
Prior art keywords
charge
signal
potential
gate
reset
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58076449A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59201468A (ja
Inventor
Hiroshige Goto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Priority to JP58076449A priority Critical patent/JPS59201468A/ja
Publication of JPS59201468A publication Critical patent/JPS59201468A/ja
Publication of JPH0522383B2 publication Critical patent/JPH0522383B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/462—Buried-channel CCD
    • H10D44/464—Two-phase CCD
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D44/00—Charge transfer devices
    • H10D44/40—Charge-coupled devices [CCD]
    • H10D44/45—Charge-coupled devices [CCD] having field effect produced by insulated gate electrodes 
    • H10D44/454—Output structures

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
JP58076449A 1983-04-30 1983-04-30 電荷転送デバイス Granted JPS59201468A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58076449A JPS59201468A (ja) 1983-04-30 1983-04-30 電荷転送デバイス

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58076449A JPS59201468A (ja) 1983-04-30 1983-04-30 電荷転送デバイス

Publications (2)

Publication Number Publication Date
JPS59201468A JPS59201468A (ja) 1984-11-15
JPH0522383B2 true JPH0522383B2 (enExample) 1993-03-29

Family

ID=13605460

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58076449A Granted JPS59201468A (ja) 1983-04-30 1983-04-30 電荷転送デバイス

Country Status (1)

Country Link
JP (1) JPS59201468A (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61187368A (ja) * 1985-02-15 1986-08-21 Toshiba Corp 電荷転送装置
JP2642927B2 (ja) * 1986-06-12 1997-08-20 ソニー株式会社 電荷転送装置
JPS62296467A (ja) * 1986-06-17 1987-12-23 Hamamatsu Photonics Kk 固体電荷転送装置
JPS6370570A (ja) * 1986-09-12 1988-03-30 Nec Corp 電荷転送装置
JPS63283058A (ja) * 1987-05-14 1988-11-18 Sony Corp 固体撮像装置
JPH0214571A (ja) * 1988-07-01 1990-01-18 Toshiba Corp 固体撮像装置
JPH0327539A (ja) * 1989-06-25 1991-02-05 Sony Corp 電荷転送装置

Also Published As

Publication number Publication date
JPS59201468A (ja) 1984-11-15

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