FR2476911A1 - Procede de fabrication de transistors bipolaires complementaires et de dispositifs mos a symetrie complementaire a electrodes de commande polycristallines - Google Patents
Procede de fabrication de transistors bipolaires complementaires et de dispositifs mos a symetrie complementaire a electrodes de commande polycristallines Download PDFInfo
- Publication number
- FR2476911A1 FR2476911A1 FR8103594A FR8103594A FR2476911A1 FR 2476911 A1 FR2476911 A1 FR 2476911A1 FR 8103594 A FR8103594 A FR 8103594A FR 8103594 A FR8103594 A FR 8103594A FR 2476911 A1 FR2476911 A1 FR 2476911A1
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- 238000000034 method Methods 0.000 title description 31
- 238000004519 manufacturing process Methods 0.000 title description 13
- 230000000295 complement effect Effects 0.000 title description 6
- 239000012535 impurity Substances 0.000 abstract description 53
- 239000000758 substrate Substances 0.000 abstract description 20
- 210000000746 body region Anatomy 0.000 abstract description 6
- 239000010410 layer Substances 0.000 description 63
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 22
- 229910052698 phosphorus Inorganic materials 0.000 description 22
- 230000015572 biosynthetic process Effects 0.000 description 21
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 20
- 239000011574 phosphorus Substances 0.000 description 20
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 18
- 239000000969 carrier Substances 0.000 description 16
- 238000009792 diffusion process Methods 0.000 description 13
- 230000000873 masking effect Effects 0.000 description 11
- 230000015556 catabolic process Effects 0.000 description 10
- 239000012298 atmosphere Substances 0.000 description 9
- 235000012239 silicon dioxide Nutrition 0.000 description 9
- 239000000377 silicon dioxide Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 239000012071 phase Substances 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 239000000126 substance Substances 0.000 description 7
- 239000012808 vapor phase Substances 0.000 description 7
- 230000005669 field effect Effects 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 238000000151 deposition Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 238000005468 ion implantation Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 239000004922 lacquer Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- 238000011109 contamination Methods 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 230000035515 penetration Effects 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 239000007858 starting material Substances 0.000 description 2
- 238000012549 training Methods 0.000 description 2
- 102100037807 GATOR complex protein MIOS Human genes 0.000 description 1
- 241001481828 Glyptocephalus cynoglossus Species 0.000 description 1
- 101000950705 Homo sapiens GATOR complex protein MIOS Proteins 0.000 description 1
- 241000158147 Sator Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- UVJQIYZYQQKIAC-UHFFFAOYSA-N [amino(ethylsulfanyl)methylidene]-[4-(trifluoromethyl)phenyl]azanium;chloride Chemical compound Cl.CCSC(N)=NC1=CC=C(C(F)(F)F)C=C1 UVJQIYZYQQKIAC-UHFFFAOYSA-N 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 244000309466 calf Species 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 208000027220 intraductal tubulopapillary neoplasm of pancreas Diseases 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- -1 oxy- Chemical class 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- DGMKFQYCZXERLX-UHFFFAOYSA-N proglumide Chemical compound CCCN(CCC)C(=O)C(CCC(O)=O)NC(=O)C1=CC=CC=C1 DGMKFQYCZXERLX-UHFFFAOYSA-N 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000009941 weaving Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8248—Combination of bipolar and field-effect technology
- H01L21/8249—Bipolar and MOS technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0826—Combination of vertical complementary transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0928—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors comprising both N- and P- wells in the substrate, e.g. twin-tub
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/008—Bi-level fabrication
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/009—Bi-MOS
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/106—Masks, special
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/133—Reflow oxides and glasses
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US06/124,201 US4299024A (en) | 1980-02-25 | 1980-02-25 | Fabrication of complementary bipolar transistors and CMOS devices with poly gates |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2476911A1 true FR2476911A1 (fr) | 1981-08-28 |
FR2476911B1 FR2476911B1 (US07582779-20090901-C00044.png) | 1985-03-08 |
Family
ID=22413419
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR8103594A Granted FR2476911A1 (fr) | 1980-02-25 | 1981-02-24 | Procede de fabrication de transistors bipolaires complementaires et de dispositifs mos a symetrie complementaire a electrodes de commande polycristallines |
Country Status (5)
Families Citing this family (41)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4445268A (en) * | 1981-02-14 | 1984-05-01 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing a semiconductor integrated circuit BI-MOS device |
DE3272436D1 (en) * | 1982-05-06 | 1986-09-11 | Itt Ind Gmbh Deutsche | Method of making a monolithic integrated circuit with at least one isolated gate field effect transistor and one bipolar transistor |
JPS58211222A (ja) * | 1982-05-31 | 1983-12-08 | Sharp Corp | 定電圧回路 |
DE3230077A1 (de) * | 1982-08-12 | 1984-02-16 | Siemens AG, 1000 Berlin und 8000 München | Integrierte bipolar- und mos-transistoren enthaltende halbleiterschaltung auf einem chip und verfahren zu ihrer herstellung |
US4475955A (en) * | 1982-12-06 | 1984-10-09 | Harris Corporation | Method for forming integrated circuits bearing polysilicon of reduced resistance |
US4729008A (en) * | 1982-12-08 | 1988-03-01 | Harris Corporation | High voltage IC bipolar transistors operable to BVCBO and method of fabrication |
US5281545A (en) * | 1982-12-10 | 1994-01-25 | Ricoh Company, Ltd. | Processes for manufacturing a semiconductor device |
US4598462A (en) * | 1983-04-07 | 1986-07-08 | Rca Corporation | Method for making semiconductor device with integral fuse |
EP0122313B1 (de) * | 1983-04-18 | 1987-01-07 | Deutsche ITT Industries GmbH | Verfahren zum Herstellen einer monolithisch integrierten Schaltung mit mindestens einem integrierten Isolierschicht-Feldeffekttransistor |
US4553318A (en) * | 1983-05-02 | 1985-11-19 | Rca Corporation | Method of making integrated PNP and NPN bipolar transistors and junction field effect transistor |
US4574467A (en) * | 1983-08-31 | 1986-03-11 | Solid State Scientific, Inc. | N- well CMOS process on a P substrate with double field guard rings and a PMOS buried channel |
JPS6134954A (ja) * | 1984-07-25 | 1986-02-19 | Matsushita Electric Works Ltd | 半導体装置用材料の製法 |
US4593458A (en) * | 1984-11-02 | 1986-06-10 | General Electric Company | Fabrication of integrated circuit with complementary, dielectrically-isolated, high voltage semiconductor devices |
DE3676781D1 (de) * | 1985-09-13 | 1991-02-14 | Siemens Ag | Integrierte bipolar- und komplementaere mos-transistoren auf einem gemeinsamen substrat enthaltende schaltung und verfahren zu ihrer herstellung. |
US5049519A (en) * | 1985-09-16 | 1991-09-17 | Texas Instruments Incorporated | Latch-up resistant CMOS process |
US4717680A (en) * | 1985-10-16 | 1988-01-05 | Harris Corporation | Fabrication of vertical NPN and PNP bipolar transistors in monolithic substrate |
US4665425A (en) * | 1985-10-16 | 1987-05-12 | Harris Corporation | Fabrication of vertical NPN and PNP bipolar transistors in monolithic substrate |
US4728624A (en) * | 1985-10-31 | 1988-03-01 | International Business Machines Corporation | Selective epitaxial growth structure and isolation |
US4685199A (en) * | 1986-04-29 | 1987-08-11 | Rca Corporation | Method for forming dielectrically isolated PMOS, NMOS, PNP and NPN transistors on a silicon wafer |
US4751561A (en) * | 1986-04-29 | 1988-06-14 | Rca Corporation | Dielectrically isolated PMOS, NMOS, PNP and NPN transistors on a silicon wafer |
US4808547A (en) * | 1986-07-07 | 1989-02-28 | Harris Corporation | Method of fabrication of high voltage IC bopolar transistors operable to BVCBO |
US4727046A (en) * | 1986-07-16 | 1988-02-23 | Fairchild Semiconductor Corporation | Method of fabricating high performance BiCMOS structures having poly emitters and silicided bases |
KR900001062B1 (ko) * | 1987-09-15 | 1990-02-26 | 강진구 | 반도체 바이 씨 모오스 장치의 제조방법 |
US4870029A (en) * | 1987-10-09 | 1989-09-26 | American Telephone And Telegraph Company, At&T-Technologies, Inc. | Method of forming complementary device structures in partially processed dielectrically isolated wafers |
JPH01169961A (ja) * | 1987-12-24 | 1989-07-05 | Sharp Corp | 半導体装置 |
JPH01282857A (ja) * | 1988-05-10 | 1989-11-14 | Seiko Epson Corp | 半導体装置及びその製造方法 |
DE3916707A1 (de) * | 1988-07-06 | 1990-01-11 | Halbleiterwerk Frankfurt Oder | Halbleiteranordnung fuer eine integrierte schaltung und verfahren fuer deren herstellung |
US4957875A (en) * | 1988-08-01 | 1990-09-18 | International Business Machines Corporation | Vertical bipolar transistor |
US4982257A (en) * | 1988-08-01 | 1991-01-01 | International Business Machines Corporation | Vertical bipolar transistor with collector and base extensions |
US4910160A (en) * | 1989-06-06 | 1990-03-20 | National Semiconductor Corporation | High voltage complementary NPN/PNP process |
US5206182A (en) * | 1989-06-08 | 1993-04-27 | United Technologies Corporation | Trench isolation process |
US5079176A (en) * | 1990-03-26 | 1992-01-07 | Harris Corporation | Method of forming a high voltage junction in a dielectrically isolated island |
US5429959A (en) * | 1990-11-23 | 1995-07-04 | Texas Instruments Incorporated | Process for simultaneously fabricating a bipolar transistor and a field-effect transistor |
US5246883A (en) * | 1992-02-06 | 1993-09-21 | Sgs-Thomson Microelectronics, Inc. | Semiconductor contact via structure and method |
JPH07106452A (ja) * | 1993-10-04 | 1995-04-21 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP2705546B2 (ja) * | 1993-12-15 | 1998-01-28 | 日本電気株式会社 | 半導体装置の製造方法 |
DE69528683T2 (de) * | 1994-04-15 | 2003-06-12 | Kabushiki Kaisha Toshiba, Kawasaki | Halbleiterbauteil und Verfahren zur Herstellung desselben |
US6004840A (en) * | 1994-04-15 | 1999-12-21 | Kabushiki Kaisha Toshiba | Method of fabricating a semiconductor device comprising a MOS portion and a bipolar portion |
TW512526B (en) * | 2000-09-07 | 2002-12-01 | Sanyo Electric Co | Semiconductor integrated circuit device and manufacturing method thereof |
US6768183B2 (en) * | 2001-04-20 | 2004-07-27 | Denso Corporation | Semiconductor device having bipolar transistors |
DE102007034801B4 (de) * | 2007-03-26 | 2010-10-28 | X-Fab Semiconductor Foundries Ag | BiMOS-Halbleiterbauelement mit Herstellverfahren mit Bipolarintegration ohne zusätzliche Maskenschritte |
Citations (3)
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FR2028462A1 (US07582779-20090901-C00044.png) * | 1969-01-16 | 1970-10-09 | Signetics Corp | |
US3999213A (en) * | 1972-04-14 | 1976-12-21 | U.S. Philips Corporation | Semiconductor device and method of manufacturing the device |
US4120707A (en) * | 1977-03-30 | 1978-10-17 | Harris Corporation | Process of fabricating junction isolated IGFET and bipolar transistor integrated circuit by diffusion |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
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US3609479A (en) * | 1968-02-29 | 1971-09-28 | Westinghouse Electric Corp | Semiconductor integrated circuit having mis and bipolar transistor elements |
US3576475A (en) * | 1968-08-29 | 1971-04-27 | Texas Instruments Inc | Field effect transistors for integrated circuits and methods of manufacture |
US3818583A (en) * | 1970-07-08 | 1974-06-25 | Signetics Corp | Method for fabricating semiconductor structure having complementary devices |
JPS5546062B2 (US07582779-20090901-C00044.png) * | 1972-07-10 | 1980-11-21 | ||
US3865649A (en) * | 1972-10-16 | 1975-02-11 | Harris Intertype Corp | Fabrication of MOS devices and complementary bipolar transistor devices in a monolithic substrate |
JPS4965189A (US07582779-20090901-C00044.png) * | 1972-10-24 | 1974-06-24 | ||
US3892606A (en) * | 1973-06-28 | 1975-07-01 | Ibm | Method for forming silicon conductive layers utilizing differential etching rates |
US4075754A (en) * | 1974-02-26 | 1978-02-28 | Harris Corporation | Self aligned gate for di-CMOS |
US3899373A (en) * | 1974-05-20 | 1975-08-12 | Ibm | Method for forming a field effect device |
JPS526008A (en) * | 1975-07-04 | 1977-01-18 | Hitachi Ltd | Subscriber's circuit |
JPS5269278A (en) * | 1975-12-08 | 1977-06-08 | Hitachi Ltd | Production of s#-gate type complementary mos semiconductor device |
JPS5420679A (en) * | 1977-07-18 | 1979-02-16 | Hitachi Ltd | Bipolar mos semiconductor integrated circuit device and the same |
US4191603A (en) * | 1978-05-01 | 1980-03-04 | International Business Machines Corporation | Making semiconductor structure with improved phosphosilicate glass isolation |
JPS54156482A (en) * | 1978-05-30 | 1979-12-10 | Nec Corp | Manufacture for field effect type semiconductor device |
-
1980
- 1980-02-25 US US06/124,201 patent/US4299024A/en not_active Expired - Lifetime
- 1980-12-22 GB GB8041046A patent/GB2071910B/en not_active Expired
-
1981
- 1981-02-12 DE DE3105118A patent/DE3105118C2/de not_active Expired - Lifetime
- 1981-02-12 JP JP1821581A patent/JPS56158468A/ja active Pending
- 1981-02-24 FR FR8103594A patent/FR2476911A1/fr active Granted
-
1991
- 1991-05-27 JP JP3228198A patent/JPH05347383A/ja active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
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FR2028462A1 (US07582779-20090901-C00044.png) * | 1969-01-16 | 1970-10-09 | Signetics Corp | |
US3999213A (en) * | 1972-04-14 | 1976-12-21 | U.S. Philips Corporation | Semiconductor device and method of manufacturing the device |
US4120707A (en) * | 1977-03-30 | 1978-10-17 | Harris Corporation | Process of fabricating junction isolated IGFET and bipolar transistor integrated circuit by diffusion |
Also Published As
Publication number | Publication date |
---|---|
FR2476911B1 (US07582779-20090901-C00044.png) | 1985-03-08 |
GB2071910A (en) | 1981-09-23 |
JPH05347383A (ja) | 1993-12-27 |
JPS56158468A (en) | 1981-12-07 |
DE3105118C2 (de) | 1994-05-05 |
DE3105118A1 (de) | 1981-12-24 |
US4299024A (en) | 1981-11-10 |
GB2071910B (en) | 1984-04-18 |
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