FR2361750A1 - Dispositif semi-conducteur a jonction redresseuse metal-semi-conducteur - Google Patents

Dispositif semi-conducteur a jonction redresseuse metal-semi-conducteur

Info

Publication number
FR2361750A1
FR2361750A1 FR7724499A FR7724499A FR2361750A1 FR 2361750 A1 FR2361750 A1 FR 2361750A1 FR 7724499 A FR7724499 A FR 7724499A FR 7724499 A FR7724499 A FR 7724499A FR 2361750 A1 FR2361750 A1 FR 2361750A1
Authority
FR
France
Prior art keywords
layer
metal
conduction
semiconductor
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
FR7724499A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2361750A1 publication Critical patent/FR2361750A1/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H01L29/0623—Buried supplementary region, e.g. buried guard ring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
    • H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
    • H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
    • H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/872—Schottky diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/088—J-Fet, i.e. junction field effect transistor

Abstract

Dispositif semi-conducteur à jonction redresseuse haute-tension métal-semi-conducteur, ce dispositif comportant un corps semi-conducteur avec une couche semi-conductrice de premier type de conduction qui affleure une surface du corps, une couche métallique qui est en contact avec une partie de ladite surface et qui forme à l'endroit de contact une jonction redresseuse et une connexion à faible valeur ohmique avec la couche de premier type de conduction. Selon l'invention la couche de premier type de conduction comporte des première et deuxième sous-couches parmi lesquelles la première est adjacente à ladite surface du corps et présente une concentration de dopage qui diffère de celle de la deuxième sous-couche portant ladite première sous-couche, alors que dans le voisinage des limites entre les première et deuxième sous-couches se trouvent plusieurs régions discrètes isolées de type de conduction opposé qui s'étendent au moins en dessous de la partie de surface contactée par la couche métallique. Application aux circuits intégrés.
FR7724499A 1976-08-09 1977-08-09 Dispositif semi-conducteur a jonction redresseuse metal-semi-conducteur Withdrawn FR2361750A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB33044/76A GB1558506A (en) 1976-08-09 1976-08-09 Semiconductor devices having a rectifying metalto-semicondductor junction

Publications (1)

Publication Number Publication Date
FR2361750A1 true FR2361750A1 (fr) 1978-03-10

Family

ID=10347777

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7724499A Withdrawn FR2361750A1 (fr) 1976-08-09 1977-08-09 Dispositif semi-conducteur a jonction redresseuse metal-semi-conducteur

Country Status (6)

Country Link
US (1) US4134123A (fr)
JP (1) JPS5320774A (fr)
CA (1) CA1085060A (fr)
DE (1) DE2733840A1 (fr)
FR (1) FR2361750A1 (fr)
GB (1) GB1558506A (fr)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0134456A2 (fr) * 1983-08-08 1985-03-20 General Electric Company Redresseur à étranglement
WO1996026547A1 (fr) * 1995-02-20 1996-08-29 Rohm Co., Ltd. Dispositif a semiconducteur a anneau de garde, et son procede de fabrication
WO1999053550A1 (fr) * 1998-04-08 1999-10-21 Siemens Aktiengesellschaft Element de terminaison marginal haute tension pour structures de type planar
WO2001047028A1 (fr) * 1999-12-22 2001-06-28 Stmicroelectronics S.A. Fabrication de composants unipolaires
FR2807569A1 (fr) * 2000-04-10 2001-10-12 Centre Nat Rech Scient Perfectionnement apportes aux diodes schottky
WO2001071810A3 (fr) * 2000-03-20 2002-01-03 Koninkl Philips Electronics Nv Connexion de dispositif a semi-conducteur a haute tension

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DE2800373C2 (de) * 1978-01-05 1980-03-13 Wabco Fahrzeugbremsen Gmbh, 3000 Hannover Schaltungsanordnung zur Verringerung der Störanfälligkeit digitaler Messungen der Periodendauer der Frequenz von Sensorsignalen in blockiergeschützten Fahrzeugbremsanlagen
GB2089119A (en) * 1980-12-10 1982-06-16 Philips Electronic Associated High voltage semiconductor devices
US4494134A (en) * 1982-07-01 1985-01-15 General Electric Company High voltage semiconductor devices comprising integral JFET
JPS5994453A (ja) * 1982-10-25 1984-05-31 ゼネラル・エレクトリック・カンパニイ オン抵抗を低減した高圧半導体デバイス
GB2137412B (en) * 1983-03-15 1987-03-04 Standard Telephones Cables Ltd Semiconductor device
JP2667477B2 (ja) * 1988-12-02 1997-10-27 株式会社東芝 ショットキーバリアダイオード
JPH0347305U (fr) * 1989-09-08 1991-05-01
DE19740195C2 (de) * 1997-09-12 1999-12-02 Siemens Ag Halbleiterbauelement mit Metall-Halbleiterübergang mit niedrigem Sperrstrom
DE19823944A1 (de) * 1998-05-28 1999-12-02 Siemens Ag Leistungsdioden-Struktur
DE19830332C2 (de) * 1998-07-07 2003-04-17 Infineon Technologies Ag Vertikales Halbleiterbauelement mit reduziertem elektrischem Oberflächenfeld
KR100564530B1 (ko) * 1998-08-27 2006-05-25 페어차일드코리아반도체 주식회사 그 내부에 쇼트키 다이오드를 갖는 전력 소자 및 이를 제조하는방법
US6977420B2 (en) * 1998-09-30 2005-12-20 National Semiconductor Corporation ESD protection circuit utilizing floating lateral clamp diodes
DE19930781B4 (de) * 1999-07-03 2006-10-12 Robert Bosch Gmbh Diode mit Metall-Halbleiterkontakt und Verfahren zu ihrer Herstellung
GB2354879B (en) * 1999-08-11 2004-05-12 Mitel Semiconductor Ltd A semiconductor device
JP4770009B2 (ja) * 2000-09-05 2011-09-07 富士電機株式会社 超接合ショットキーダイオード
US6462393B2 (en) 2001-03-20 2002-10-08 Fabtech, Inc. Schottky device
JP4204895B2 (ja) * 2003-05-12 2009-01-07 三菱電機株式会社 半導体装置
US6894318B2 (en) * 2003-08-20 2005-05-17 Texas Instruments Incorporated Diode having a double implanted guard ring
US20050110038A1 (en) * 2003-11-21 2005-05-26 Hamerski Roman J. High voltage semiconductor device having current localization region
DE10361136B4 (de) * 2003-12-23 2005-10-27 Infineon Technologies Ag Halbleiterdiode und IGBT
JP4990140B2 (ja) * 2004-08-31 2012-08-01 フリースケール セミコンダクター インコーポレイテッド パワー半導体デバイス
US7436022B2 (en) * 2005-02-11 2008-10-14 Alpha & Omega Semiconductors, Ltd. Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout
US7952139B2 (en) * 2005-02-11 2011-05-31 Alpha & Omega Semiconductor Ltd. Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout
US8110869B2 (en) * 2005-02-11 2012-02-07 Alpha & Omega Semiconductor, Ltd Planar SRFET using no additional masks and layout method
JP2006318956A (ja) * 2005-05-10 2006-11-24 Sumitomo Electric Ind Ltd ショットキーダイオードを有する半導体装置
JP4189415B2 (ja) * 2006-06-30 2008-12-03 株式会社東芝 半導体装置
US7955929B2 (en) * 2007-01-10 2011-06-07 Freescale Semiconductor, Inc. Method of forming a semiconductor device having an active area and a termination area
DE102007045184A1 (de) * 2007-09-21 2009-04-02 Robert Bosch Gmbh Halbleitervorrichtung und Verfahren zu deren Herstellung
US9093521B2 (en) * 2008-06-30 2015-07-28 Alpha And Omega Semiconductor Incorporated Enhancing Schottky breakdown voltage (BV) without affecting an integrated MOSFET-Schottky device layout
US8362552B2 (en) * 2008-12-23 2013-01-29 Alpha And Omega Semiconductor Incorporated MOSFET device with reduced breakdown voltage
US9508805B2 (en) 2008-12-31 2016-11-29 Alpha And Omega Semiconductor Incorporated Termination design for nanotube MOSFET
TW201034205A (en) * 2009-03-04 2010-09-16 Actron Technology Corp Rectifier used in high temperature application
US8299494B2 (en) 2009-06-12 2012-10-30 Alpha & Omega Semiconductor, Inc. Nanotube semiconductor devices
US7910486B2 (en) * 2009-06-12 2011-03-22 Alpha & Omega Semiconductor, Inc. Method for forming nanotube semiconductor devices
US8154078B2 (en) * 2010-02-17 2012-04-10 Vanguard International Semiconductor Corporation Semiconductor structure and fabrication method thereof
JP2011009797A (ja) * 2010-10-15 2011-01-13 Sumitomo Electric Ind Ltd ショットキーダイオードを有する半導体装置
US8362585B1 (en) 2011-07-15 2013-01-29 Alpha & Omega Semiconductor, Inc. Junction barrier Schottky diode with enforced upper contact structure and method for robust packaging
WO2013014943A2 (fr) * 2011-07-27 2013-01-31 Kabushiki Kaisha Toyota Chuo Kenkyusho Diode, dispositif à semi-conducteur et mosfet
CN103378173B (zh) * 2012-04-29 2017-11-14 朱江 一种具有电荷补偿肖特基半导体装置及其制造方法
KR101416361B1 (ko) * 2012-09-14 2014-08-06 현대자동차 주식회사 쇼트키 배리어 다이오드 및 그 제조 방법
JP5983415B2 (ja) * 2013-01-15 2016-08-31 住友電気工業株式会社 炭化珪素半導体装置
JP6135364B2 (ja) * 2013-07-26 2017-05-31 住友電気工業株式会社 炭化珪素半導体装置およびその製造方法
DE102013019851B4 (de) * 2013-11-26 2015-10-22 Infineon Technologies Ag Schottky-Diode mit reduzierter Flussspannung
CN105280723A (zh) * 2014-07-14 2016-01-27 西安永电电气有限责任公司 4H-SiC浮结结势垒肖特基二极管及其制备方法
CN104576762B (zh) * 2014-12-25 2018-08-28 株洲南车时代电气股份有限公司 肖特基势垒二极管及其制造方法
NO341254B1 (en) 2015-11-02 2017-09-25 Orient Holding As Heating and cooling system of a modular residential building

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FR2204893A1 (fr) * 1972-11-01 1974-05-24 Gen Electric
US3891479A (en) * 1971-10-19 1975-06-24 Motorola Inc Method of making a high current Schottky barrier device
USB520115I5 (fr) * 1972-04-20 1976-03-23

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US3614560A (en) * 1969-12-30 1971-10-19 Ibm Improved surface barrier transistor
JPS49115676A (fr) * 1973-03-07 1974-11-05
US3999281A (en) * 1976-01-16 1976-12-28 The United States Of America As Represented By The Secretary Of The Air Force Method for fabricating a gridded Schottky barrier field effect transistor

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US3646411A (en) * 1968-12-20 1972-02-29 Nippon Electric Co Surface barrier junction diode
US3891479A (en) * 1971-10-19 1975-06-24 Motorola Inc Method of making a high current Schottky barrier device
USB520115I5 (fr) * 1972-04-20 1976-03-23
FR2204893A1 (fr) * 1972-11-01 1974-05-24 Gen Electric

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Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0134456A2 (fr) * 1983-08-08 1985-03-20 General Electric Company Redresseur à étranglement
EP0134456A3 (en) * 1983-08-08 1987-01-14 General Electric Company Pinch rectifier
WO1996026547A1 (fr) * 1995-02-20 1996-08-29 Rohm Co., Ltd. Dispositif a semiconducteur a anneau de garde, et son procede de fabrication
WO1999053550A1 (fr) * 1998-04-08 1999-10-21 Siemens Aktiengesellschaft Element de terminaison marginal haute tension pour structures de type planar
US6376890B1 (en) 1998-04-08 2002-04-23 Siemens Aktiengesellschaft High-voltage edge termination for planar structures
WO2001047028A1 (fr) * 1999-12-22 2001-06-28 Stmicroelectronics S.A. Fabrication de composants unipolaires
FR2803094A1 (fr) * 1999-12-22 2001-06-29 St Microelectronics Sa Fabrication de composants unipolaires
WO2001071810A3 (fr) * 2000-03-20 2002-01-03 Koninkl Philips Electronics Nv Connexion de dispositif a semi-conducteur a haute tension
FR2807569A1 (fr) * 2000-04-10 2001-10-12 Centre Nat Rech Scient Perfectionnement apportes aux diodes schottky
WO2001078152A2 (fr) * 2000-04-10 2001-10-18 Centre National De La Recherche Scientifique (C.N.R.S.) Dispositif semi-conducteur du type diode schottky
WO2001078152A3 (fr) * 2000-04-10 2002-02-07 Centre Nat Rech Scient Dispositif semi-conducteur du type diode schottky

Also Published As

Publication number Publication date
DE2733840A1 (de) 1978-02-16
GB1558506A (en) 1980-01-03
JPS5320774A (en) 1978-02-25
US4134123A (en) 1979-01-09
CA1085060A (fr) 1980-09-02

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