USB520115I5 - - Google Patents
Info
- Publication number
- USB520115I5 USB520115I5 US52011574A USB520115I5 US B520115 I5 USB520115 I5 US B520115I5 US 52011574 A US52011574 A US 52011574A US B520115 I5 USB520115 I5 US B520115I5
- Authority
- US
- United States
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/520,115 US4003072A (en) | 1972-04-20 | 1974-11-01 | Semiconductor device with high voltage breakdown resistance |
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3975972A JPS5320194B2 (fr) | 1972-04-20 | 1972-04-20 | |
| JA47-39759 | 1972-04-20 | ||
| US35117273A | 1973-04-17 | 1973-04-17 | |
| US05/520,115 US4003072A (en) | 1972-04-20 | 1974-11-01 | Semiconductor device with high voltage breakdown resistance |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US35117273A Continuation | 1972-04-20 | 1973-04-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| USB520115I5 true USB520115I5 (fr) | 1976-03-23 |
| US4003072A US4003072A (en) | 1977-01-11 |
Family
ID=27290261
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| US05/520,115 Expired - Lifetime US4003072A (en) | 1972-04-20 | 1974-11-01 | Semiconductor device with high voltage breakdown resistance |
Country Status (1)
| Country | Link |
|---|---|
| US (1) | US4003072A (fr) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2361750A1 (fr) * | 1976-08-09 | 1978-03-10 | Philips Nv | Dispositif semi-conducteur a jonction redresseuse metal-semi-conducteur |
| WO1996026547A1 (fr) * | 1995-02-20 | 1996-08-29 | Rohm Co., Ltd. | Dispositif a semiconducteur a anneau de garde, et son procede de fabrication |
Families Citing this family (69)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| SU793421A3 (ru) * | 1976-06-02 | 1980-12-30 | Ббц Аг Браун | Фототиристор |
| US4055884A (en) * | 1976-12-13 | 1977-11-01 | International Business Machines Corporation | Fabrication of power field effect transistors and the resulting structures |
| US4158206A (en) * | 1977-02-07 | 1979-06-12 | Rca Corporation | Semiconductor device |
| CH633907A5 (de) * | 1978-10-10 | 1982-12-31 | Bbc Brown Boveri & Cie | Leistungshalbleiterbauelement mit zonen-guard-ringen. |
| JPS6011815B2 (ja) * | 1979-07-09 | 1985-03-28 | 三菱電機株式会社 | サイリスタ |
| JPS56126968A (en) * | 1980-03-10 | 1981-10-05 | Mitsubishi Electric Corp | Semiconductor device |
| US4868624A (en) * | 1980-05-09 | 1989-09-19 | Regents Of The University Of Minnesota | Channel collector transistor |
| DE3029553A1 (de) * | 1980-08-04 | 1982-03-11 | Siemens AG, 1000 Berlin und 8000 München | Transistoranordnung mit hoher kollektor-emitter-durchbruchsspannung |
| US4494134A (en) * | 1982-07-01 | 1985-01-15 | General Electric Company | High voltage semiconductor devices comprising integral JFET |
| GB2131603B (en) * | 1982-12-03 | 1985-12-18 | Philips Electronic Associated | Semiconductor devices |
| US4779126A (en) * | 1983-11-25 | 1988-10-18 | International Rectifier Corporation | Optically triggered lateral thyristor with auxiliary region |
| GB2165090A (en) * | 1984-09-26 | 1986-04-03 | Philips Electronic Associated | Improving the field distribution in high voltage semiconductor devices |
| JPS61158177A (ja) * | 1984-12-28 | 1986-07-17 | Toshiba Corp | 半導体装置 |
| GB2173037A (en) * | 1985-03-29 | 1986-10-01 | Philips Electronic Associated | Semiconductor devices employing conductivity modulation |
| JPH061831B2 (ja) * | 1986-07-08 | 1994-01-05 | 株式会社日立製作所 | ゲ−トタ−ンオフサイリスタ |
| JPS63253664A (ja) * | 1987-04-10 | 1988-10-20 | Sony Corp | バイポ−ラトランジスタ |
| WO1991003842A1 (fr) * | 1989-08-31 | 1991-03-21 | Nippondenso Co., Ltd. | Transistor bipolaire a grille isolee |
| US5218226A (en) * | 1989-11-01 | 1993-06-08 | U.S. Philips Corp. | Semiconductor device having high breakdown voltage |
| US6081009A (en) * | 1997-11-10 | 2000-06-27 | Intersil Corporation | High voltage mosfet structure |
| SE9704149D0 (sv) * | 1997-11-13 | 1997-11-13 | Abb Research Ltd | A semiconductor device of SiC and a transistor of SiC having an insulated gate |
| DE19823944A1 (de) | 1998-05-28 | 1999-12-02 | Siemens Ag | Leistungsdioden-Struktur |
| DE19840032C1 (de) * | 1998-09-02 | 1999-11-18 | Siemens Ag | Halbleiterbauelement und Herstellungsverfahren dazu |
| GB2354879B (en) * | 1999-08-11 | 2004-05-12 | Mitel Semiconductor Ltd | A semiconductor device |
| US6461918B1 (en) * | 1999-12-20 | 2002-10-08 | Fairchild Semiconductor Corporation | Power MOS device with improved gate charge performance |
| JP4635304B2 (ja) * | 2000-07-12 | 2011-02-23 | 富士電機システムズ株式会社 | 双方向超接合半導体素子およびその製造方法 |
| US7745289B2 (en) * | 2000-08-16 | 2010-06-29 | Fairchild Semiconductor Corporation | Method of forming a FET having ultra-low on-resistance and low gate charge |
| US6696726B1 (en) * | 2000-08-16 | 2004-02-24 | Fairchild Semiconductor Corporation | Vertical MOSFET with ultra-low resistance and low gate charge |
| GB2373634B (en) * | 2000-10-31 | 2004-12-08 | Fuji Electric Co Ltd | Semiconductor device |
| US6803626B2 (en) | 2002-07-18 | 2004-10-12 | Fairchild Semiconductor Corporation | Vertical charge control semiconductor device |
| US6677641B2 (en) | 2001-10-17 | 2004-01-13 | Fairchild Semiconductor Corporation | Semiconductor structure with improved smaller forward voltage loss and higher blocking capability |
| US7132712B2 (en) | 2002-11-05 | 2006-11-07 | Fairchild Semiconductor Corporation | Trench structure having one or more diodes embedded therein adjacent a PN junction |
| US7345342B2 (en) * | 2001-01-30 | 2008-03-18 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
| US6916745B2 (en) * | 2003-05-20 | 2005-07-12 | Fairchild Semiconductor Corporation | Structure and method for forming a trench MOSFET having self-aligned features |
| US6710403B2 (en) * | 2002-07-30 | 2004-03-23 | Fairchild Semiconductor Corporation | Dual trench power MOSFET |
| US6818513B2 (en) * | 2001-01-30 | 2004-11-16 | Fairchild Semiconductor Corporation | Method of forming a field effect transistor having a lateral depletion structure |
| US7061066B2 (en) * | 2001-10-17 | 2006-06-13 | Fairchild Semiconductor Corporation | Schottky diode using charge balance structure |
| US6828609B2 (en) * | 2001-11-09 | 2004-12-07 | Infineon Technologies Ag | High-voltage semiconductor component |
| US6819089B2 (en) * | 2001-11-09 | 2004-11-16 | Infineon Technologies Ag | Power factor correction circuit with high-voltage semiconductor component |
| KR100859701B1 (ko) * | 2002-02-23 | 2008-09-23 | 페어차일드코리아반도체 주식회사 | 고전압 수평형 디모스 트랜지스터 및 그 제조 방법 |
| US7033891B2 (en) * | 2002-10-03 | 2006-04-25 | Fairchild Semiconductor Corporation | Trench gate laterally diffused MOSFET devices and methods for making such devices |
| US7576388B1 (en) * | 2002-10-03 | 2009-08-18 | Fairchild Semiconductor Corporation | Trench-gate LDMOS structures |
| US6710418B1 (en) | 2002-10-11 | 2004-03-23 | Fairchild Semiconductor Corporation | Schottky rectifier with insulation-filled trenches and method of forming the same |
| JP2006518107A (ja) * | 2003-02-18 | 2006-08-03 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 半導体装置及びそのような装置の製造方法 |
| US7652326B2 (en) * | 2003-05-20 | 2010-01-26 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
| KR100994719B1 (ko) * | 2003-11-28 | 2010-11-16 | 페어차일드코리아반도체 주식회사 | 슈퍼정션 반도체장치 |
| US7368777B2 (en) | 2003-12-30 | 2008-05-06 | Fairchild Semiconductor Corporation | Accumulation device with charge balance structure and method of forming the same |
| US20050199918A1 (en) * | 2004-03-15 | 2005-09-15 | Daniel Calafut | Optimized trench power MOSFET with integrated schottky diode |
| US7352036B2 (en) | 2004-08-03 | 2008-04-01 | Fairchild Semiconductor Corporation | Semiconductor power device having a top-side drain using a sinker trench |
| EP1790013A1 (fr) * | 2004-08-31 | 2007-05-30 | Freescale Semiconductor, Inc. | Dispositif de puissance a semi-conducteurs |
| US7265415B2 (en) * | 2004-10-08 | 2007-09-04 | Fairchild Semiconductor Corporation | MOS-gated transistor with reduced miller capacitance |
| DE112006000832B4 (de) | 2005-04-06 | 2018-09-27 | Fairchild Semiconductor Corporation | Trenched-Gate-Feldeffekttransistoren und Verfahren zum Bilden derselben |
| US7385248B2 (en) * | 2005-08-09 | 2008-06-10 | Fairchild Semiconductor Corporation | Shielded gate field effect transistor with improved inter-poly dielectric |
| US7446374B2 (en) | 2006-03-24 | 2008-11-04 | Fairchild Semiconductor Corporation | High density trench FET with integrated Schottky diode and method of manufacture |
| US7319256B1 (en) * | 2006-06-19 | 2008-01-15 | Fairchild Semiconductor Corporation | Shielded gate trench FET with the shield and gate electrodes being connected together |
| US8928077B2 (en) * | 2007-09-21 | 2015-01-06 | Fairchild Semiconductor Corporation | Superjunction structures for power devices |
| US7772668B2 (en) | 2007-12-26 | 2010-08-10 | Fairchild Semiconductor Corporation | Shielded gate trench FET with multiple channels |
| US20120273916A1 (en) | 2011-04-27 | 2012-11-01 | Yedinak Joseph A | Superjunction Structures for Power Devices and Methods of Manufacture |
| US8174067B2 (en) | 2008-12-08 | 2012-05-08 | Fairchild Semiconductor Corporation | Trench-based power semiconductor devices with increased breakdown voltage characteristics |
| US8154078B2 (en) * | 2010-02-17 | 2012-04-10 | Vanguard International Semiconductor Corporation | Semiconductor structure and fabrication method thereof |
| US8319290B2 (en) | 2010-06-18 | 2012-11-27 | Fairchild Semiconductor Corporation | Trench MOS barrier schottky rectifier with a planar surface using CMP techniques |
| US8487371B2 (en) | 2011-03-29 | 2013-07-16 | Fairchild Semiconductor Corporation | Vertical MOSFET transistor having source/drain contacts disposed on the same side and method for manufacturing the same |
| US8673700B2 (en) | 2011-04-27 | 2014-03-18 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
| US8786010B2 (en) | 2011-04-27 | 2014-07-22 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
| US8772868B2 (en) | 2011-04-27 | 2014-07-08 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
| US8836028B2 (en) | 2011-04-27 | 2014-09-16 | Fairchild Semiconductor Corporation | Superjunction structures for power devices and methods of manufacture |
| US8872278B2 (en) | 2011-10-25 | 2014-10-28 | Fairchild Semiconductor Corporation | Integrated gate runner and field implant termination for trench devices |
| US9070790B2 (en) * | 2013-08-29 | 2015-06-30 | Infineon Technologies Ag | Vertical semiconductor device and method of manufacturing thereof |
| DE102013019851B4 (de) * | 2013-11-26 | 2015-10-22 | Infineon Technologies Ag | Schottky-Diode mit reduzierter Flussspannung |
| CN106505092B (zh) * | 2016-08-18 | 2024-05-14 | 全球能源互联网研究院 | 一种垂直型半导体器件的双面终端结构 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3035186A (en) * | 1959-06-15 | 1962-05-15 | Bell Telephone Labor Inc | Semiconductor switching apparatus |
| DE1294558B (de) * | 1961-06-07 | 1969-05-08 | Westinghouse Electric Corp | Hochspannungsgleichrichter und Verfahren zum Herstellen |
| US3300694A (en) * | 1962-12-20 | 1967-01-24 | Westinghouse Electric Corp | Semiconductor controlled rectifier with firing pin portion on emitter |
| US3391287A (en) * | 1965-07-30 | 1968-07-02 | Westinghouse Electric Corp | Guard junctions for p-nu junction semiconductor devices |
| US3571674A (en) * | 1969-01-10 | 1971-03-23 | Fairchild Camera Instr Co | Fast switching pnp transistor |
| FR2085407B1 (fr) * | 1970-04-17 | 1974-06-14 | Radiotechnique Compelec |
-
1974
- 1974-11-01 US US05/520,115 patent/US4003072A/en not_active Expired - Lifetime
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2361750A1 (fr) * | 1976-08-09 | 1978-03-10 | Philips Nv | Dispositif semi-conducteur a jonction redresseuse metal-semi-conducteur |
| WO1996026547A1 (fr) * | 1995-02-20 | 1996-08-29 | Rohm Co., Ltd. | Dispositif a semiconducteur a anneau de garde, et son procede de fabrication |
| US5841181A (en) * | 1995-02-20 | 1998-11-24 | Rohm Co., Ltd. | Semiconductor apparatus having field limiting rings |
Also Published As
| Publication number | Publication date |
|---|---|
| US4003072A (en) | 1977-01-11 |