FR2435131A1 - Diode capacitive - Google Patents
Diode capacitiveInfo
- Publication number
- FR2435131A1 FR2435131A1 FR7919305A FR7919305A FR2435131A1 FR 2435131 A1 FR2435131 A1 FR 2435131A1 FR 7919305 A FR7919305 A FR 7919305A FR 7919305 A FR7919305 A FR 7919305A FR 2435131 A1 FR2435131 A1 FR 2435131A1
- Authority
- FR
- France
- Prior art keywords
- conduction
- junction
- type
- epitaxial layer
- zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/93—Variable capacitance diodes, e.g. varactors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Integrated Circuits (AREA)
Abstract
Diode capacitive comportant un substrat de premier type de conduction, une couche épitaxiale de premier type de conduction située sur ledit substrat, une première zone de premier type de conduction diffusée dans ladite couche épitaxiale, ainsi qu'une deuxième zone de surface de deuxième type de conduction qui, en coopération avec la première zone, forme une jonction-pn. Conformément à l'invention, le profil de dopage dans la première zone à partir de la jonction-pn répond approximativement à la relation N(x) = No e**-Bx + NE dans laquelle NcTo est la concentration de dopage de la première zone près de la jonction-pn, NE est la concentration de dopage de la couche épitaxiale tandis que x est la distance jusqu'à la jonction-pn, alors que No est plus petit ou égal à 24 NE . De ce fait, l'écart que subit la fréquence reste petit et ne change pas de signe. Application : circuits intégrés.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2833319A DE2833319C2 (de) | 1978-07-29 | 1978-07-29 | Kapazitätsdiode |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2435131A1 true FR2435131A1 (fr) | 1980-03-28 |
FR2435131B1 FR2435131B1 (fr) | 1984-06-08 |
Family
ID=6045692
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7919305A Granted FR2435131A1 (fr) | 1978-07-29 | 1979-07-26 | Diode capacitive |
Country Status (8)
Country | Link |
---|---|
US (1) | US4475117A (fr) |
JP (1) | JPS5522894A (fr) |
CA (1) | CA1130469A (fr) |
DE (1) | DE2833319C2 (fr) |
FR (1) | FR2435131A1 (fr) |
GB (1) | GB2026771B (fr) |
IT (1) | IT1123479B (fr) |
NL (1) | NL184446C (fr) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6459874A (en) * | 1987-08-31 | 1989-03-07 | Toko Inc | Manufacture of variable-capacitance diode |
US5017950A (en) * | 1989-01-19 | 1991-05-21 | Toko, Inc. | Variable-capacitance diode element having wide capacitance variation range |
JP2525753B2 (ja) * | 1991-11-13 | 1996-08-21 | 東光株式会社 | 半導体接合容量素子 |
WO1997011498A1 (fr) * | 1995-09-18 | 1997-03-27 | Philips Electronics N.V. | Diode varicap et son procede de fabrication |
US9224703B2 (en) * | 2013-09-24 | 2015-12-29 | Semiconductor Components Industries, Llc | Electronic device including a diode and a process of forming the same |
RU2614663C1 (ru) * | 2015-12-29 | 2017-03-28 | Общество с ограниченной ответственностью "Лаборатория Микроприборов" | Варикап и способ его изготовления |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1154049A (en) * | 1965-12-30 | 1969-06-04 | Siemens Ag | Improvements in or relating to Avalanche Diodes. |
FR2026335A1 (fr) * | 1968-12-17 | 1970-09-18 | Siemens Ag | |
FR2098362A1 (fr) * | 1970-07-13 | 1972-03-10 | Siemens Ag | |
GB1277501A (en) * | 1963-01-23 | 1972-06-14 | Gen Electric | Variable capacitance diode fabrication |
NL7217867A (fr) * | 1971-12-29 | 1973-07-03 | ||
FR2330143A1 (fr) * | 1975-10-28 | 1977-05-27 | Sony Corp | Procede d'implantation ionique pour la fabrication de semi-conducteurs |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA797439A (en) * | 1968-10-22 | Fujitsu Limited | Variable capacity diode | |
US3878001A (en) * | 1970-07-13 | 1975-04-15 | Siemens Ag | Method of making a hypersensitive semiconductor tuning diode |
-
1978
- 1978-07-29 DE DE2833319A patent/DE2833319C2/de not_active Expired
-
1979
- 1979-07-24 NL NLAANVRAGE7905701,A patent/NL184446C/xx not_active IP Right Cessation
- 1979-07-26 IT IT24706/79A patent/IT1123479B/it active
- 1979-07-26 GB GB7926115A patent/GB2026771B/en not_active Expired
- 1979-07-26 CA CA332,579A patent/CA1130469A/fr not_active Expired
- 1979-07-26 FR FR7919305A patent/FR2435131A1/fr active Granted
- 1979-07-27 JP JP9663879A patent/JPS5522894A/ja active Pending
-
1981
- 1981-02-13 US US06/234,089 patent/US4475117A/en not_active Expired - Fee Related
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1277501A (en) * | 1963-01-23 | 1972-06-14 | Gen Electric | Variable capacitance diode fabrication |
GB1154049A (en) * | 1965-12-30 | 1969-06-04 | Siemens Ag | Improvements in or relating to Avalanche Diodes. |
FR2026335A1 (fr) * | 1968-12-17 | 1970-09-18 | Siemens Ag | |
FR2098362A1 (fr) * | 1970-07-13 | 1972-03-10 | Siemens Ag | |
NL7217867A (fr) * | 1971-12-29 | 1973-07-03 | ||
FR2330143A1 (fr) * | 1975-10-28 | 1977-05-27 | Sony Corp | Procede d'implantation ionique pour la fabrication de semi-conducteurs |
Non-Patent Citations (1)
Title |
---|
EXBK/68 * |
Also Published As
Publication number | Publication date |
---|---|
CA1130469A (fr) | 1982-08-24 |
DE2833319A1 (de) | 1980-02-07 |
DE2833319C2 (de) | 1982-10-07 |
IT1123479B (it) | 1986-04-30 |
IT7924706A0 (it) | 1979-07-26 |
FR2435131B1 (fr) | 1984-06-08 |
NL7905701A (nl) | 1980-01-31 |
NL184446C (nl) | 1989-07-17 |
GB2026771B (en) | 1983-01-06 |
GB2026771A (en) | 1980-02-06 |
US4475117A (en) | 1984-10-02 |
JPS5522894A (en) | 1980-02-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
ST | Notification of lapse |