JPS5522894A - Capacitance diode - Google Patents
Capacitance diodeInfo
- Publication number
- JPS5522894A JPS5522894A JP9663879A JP9663879A JPS5522894A JP S5522894 A JPS5522894 A JP S5522894A JP 9663879 A JP9663879 A JP 9663879A JP 9663879 A JP9663879 A JP 9663879A JP S5522894 A JPS5522894 A JP S5522894A
- Authority
- JP
- Japan
- Prior art keywords
- capacitance diode
- capacitance
- diode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/93—Variable capacitance diodes, e.g. varactors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2833319A DE2833319C2 (de) | 1978-07-29 | 1978-07-29 | Kapazitätsdiode |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5522894A true JPS5522894A (en) | 1980-02-18 |
Family
ID=6045692
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP9663879A Pending JPS5522894A (en) | 1978-07-29 | 1979-07-27 | Capacitance diode |
Country Status (8)
Country | Link |
---|---|
US (1) | US4475117A (ja) |
JP (1) | JPS5522894A (ja) |
CA (1) | CA1130469A (ja) |
DE (1) | DE2833319C2 (ja) |
FR (1) | FR2435131A1 (ja) |
GB (1) | GB2026771B (ja) |
IT (1) | IT1123479B (ja) |
NL (1) | NL184446C (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6459874A (en) * | 1987-08-31 | 1989-03-07 | Toko Inc | Manufacture of variable-capacitance diode |
US5017950A (en) * | 1989-01-19 | 1991-05-21 | Toko, Inc. | Variable-capacitance diode element having wide capacitance variation range |
JP2525753B2 (ja) * | 1991-11-13 | 1996-08-21 | 東光株式会社 | 半導体接合容量素子 |
EP0792525B1 (en) * | 1995-09-18 | 2001-12-05 | Koninklijke Philips Electronics N.V. | A varicap diode and method of manufacturing a varicap diode |
US9224703B2 (en) | 2013-09-24 | 2015-12-29 | Semiconductor Components Industries, Llc | Electronic device including a diode and a process of forming the same |
RU2614663C1 (ru) * | 2015-12-29 | 2017-03-28 | Общество с ограниченной ответственностью "Лаборатория Микроприборов" | Варикап и способ его изготовления |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CA797439A (en) * | 1968-10-22 | Fujitsu Limited | Variable capacity diode | |
DE1229093B (de) * | 1963-01-23 | 1966-11-24 | Basf Ag | Verfahren zur Herstellung von Hexahydropyrimidinderivaten |
DE1514655A1 (de) * | 1965-12-30 | 1969-08-28 | Siemens Ag | Lawinendiode zur Schwingungserzeugung unter quasistationaeren Bedingungen unterhalb der Grenzfrequenz fuer den Laufzeitfall |
NL6915021A (ja) * | 1968-12-17 | 1970-06-19 | ||
US3878001A (en) * | 1970-07-13 | 1975-04-15 | Siemens Ag | Method of making a hypersensitive semiconductor tuning diode |
DE2034717C2 (de) * | 1970-07-13 | 1983-11-03 | Siemens AG, 1000 Berlin und 8000 München | Abstimmbare Kapazitätsdiode |
JPS5316670B2 (ja) * | 1971-12-29 | 1978-06-02 | ||
JPS5834931B2 (ja) * | 1975-10-28 | 1983-07-29 | ソニー株式会社 | ハンドウタイヘノフジユンブツドウニユウホウ |
-
1978
- 1978-07-29 DE DE2833319A patent/DE2833319C2/de not_active Expired
-
1979
- 1979-07-24 NL NLAANVRAGE7905701,A patent/NL184446C/xx not_active IP Right Cessation
- 1979-07-26 IT IT24706/79A patent/IT1123479B/it active
- 1979-07-26 GB GB7926115A patent/GB2026771B/en not_active Expired
- 1979-07-26 FR FR7919305A patent/FR2435131A1/fr active Granted
- 1979-07-26 CA CA332,579A patent/CA1130469A/en not_active Expired
- 1979-07-27 JP JP9663879A patent/JPS5522894A/ja active Pending
-
1981
- 1981-02-13 US US06/234,089 patent/US4475117A/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
NL184446C (nl) | 1989-07-17 |
FR2435131A1 (fr) | 1980-03-28 |
IT1123479B (it) | 1986-04-30 |
FR2435131B1 (ja) | 1984-06-08 |
GB2026771A (en) | 1980-02-06 |
IT7924706A0 (it) | 1979-07-26 |
GB2026771B (en) | 1983-01-06 |
CA1130469A (en) | 1982-08-24 |
DE2833319C2 (de) | 1982-10-07 |
DE2833319A1 (de) | 1980-02-07 |
NL7905701A (nl) | 1980-01-31 |
US4475117A (en) | 1984-10-02 |
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