FR2435131B1 - - Google Patents

Info

Publication number
FR2435131B1
FR2435131B1 FR7919305A FR7919305A FR2435131B1 FR 2435131 B1 FR2435131 B1 FR 2435131B1 FR 7919305 A FR7919305 A FR 7919305A FR 7919305 A FR7919305 A FR 7919305A FR 2435131 B1 FR2435131 B1 FR 2435131B1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR7919305A
Other versions
FR2435131A1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of FR2435131A1 publication Critical patent/FR2435131A1/fr
Application granted granted Critical
Publication of FR2435131B1 publication Critical patent/FR2435131B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/93—Variable capacitance diodes, e.g. varactors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)
FR7919305A 1978-07-29 1979-07-26 Diode capacitive Granted FR2435131A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2833319A DE2833319C2 (de) 1978-07-29 1978-07-29 Kapazitätsdiode

Publications (2)

Publication Number Publication Date
FR2435131A1 FR2435131A1 (fr) 1980-03-28
FR2435131B1 true FR2435131B1 (fr) 1984-06-08

Family

ID=6045692

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7919305A Granted FR2435131A1 (fr) 1978-07-29 1979-07-26 Diode capacitive

Country Status (8)

Country Link
US (1) US4475117A (fr)
JP (1) JPS5522894A (fr)
CA (1) CA1130469A (fr)
DE (1) DE2833319C2 (fr)
FR (1) FR2435131A1 (fr)
GB (1) GB2026771B (fr)
IT (1) IT1123479B (fr)
NL (1) NL184446C (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6459874A (en) * 1987-08-31 1989-03-07 Toko Inc Manufacture of variable-capacitance diode
US5017950A (en) * 1989-01-19 1991-05-21 Toko, Inc. Variable-capacitance diode element having wide capacitance variation range
JP2525753B2 (ja) * 1991-11-13 1996-08-21 東光株式会社 半導体接合容量素子
WO1997011498A1 (fr) * 1995-09-18 1997-03-27 Philips Electronics N.V. Diode varicap et son procede de fabrication
US9224703B2 (en) * 2013-09-24 2015-12-29 Semiconductor Components Industries, Llc Electronic device including a diode and a process of forming the same
RU2614663C1 (ru) * 2015-12-29 2017-03-28 Общество с ограниченной ответственностью "Лаборатория Микроприборов" Варикап и способ его изготовления

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA797439A (en) * 1968-10-22 Fujitsu Limited Variable capacity diode
DE1229093B (de) * 1963-01-23 1966-11-24 Basf Ag Verfahren zur Herstellung von Hexahydropyrimidinderivaten
DE1514655A1 (de) * 1965-12-30 1969-08-28 Siemens Ag Lawinendiode zur Schwingungserzeugung unter quasistationaeren Bedingungen unterhalb der Grenzfrequenz fuer den Laufzeitfall
NL6915021A (fr) * 1968-12-17 1970-06-19
US3878001A (en) * 1970-07-13 1975-04-15 Siemens Ag Method of making a hypersensitive semiconductor tuning diode
DE2034717C2 (de) * 1970-07-13 1983-11-03 Siemens AG, 1000 Berlin und 8000 München Abstimmbare Kapazitätsdiode
JPS5316670B2 (fr) * 1971-12-29 1978-06-02
JPS5834931B2 (ja) * 1975-10-28 1983-07-29 ソニー株式会社 ハンドウタイヘノフジユンブツドウニユウホウ

Also Published As

Publication number Publication date
DE2833319C2 (de) 1982-10-07
CA1130469A (fr) 1982-08-24
US4475117A (en) 1984-10-02
IT7924706A0 (it) 1979-07-26
IT1123479B (it) 1986-04-30
JPS5522894A (en) 1980-02-18
NL184446C (nl) 1989-07-17
GB2026771A (en) 1980-02-06
NL7905701A (nl) 1980-01-31
GB2026771B (en) 1983-01-06
FR2435131A1 (fr) 1980-03-28
DE2833319A1 (de) 1980-02-07

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Legal Events

Date Code Title Description
ST Notification of lapse