KR900017143A - 바이-씨모스 반도체소자 제조방법 - Google Patents
바이-씨모스 반도체소자 제조방법Info
- Publication number
- KR900017143A KR900017143A KR1019890005700A KR890005700A KR900017143A KR 900017143 A KR900017143 A KR 900017143A KR 1019890005700 A KR1019890005700 A KR 1019890005700A KR 890005700 A KR890005700 A KR 890005700A KR 900017143 A KR900017143 A KR 900017143A
- Authority
- KR
- South Korea
- Prior art keywords
- smos
- semiconductor device
- device manufacturing
- layer
- impurities
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims 2
- 239000004065 semiconductor Substances 0.000 title description 2
- 239000012535 impurity Substances 0.000 claims 2
- 229910004298 SiO 2 Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 239000000758 substrate Substances 0.000 claims 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
내용 없음
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명에 의한 바이-씨모스 반도체소자의 단면도.
Claims (1)
- P형기판(1)에 N+매입층(2)을 형성하고, N-에피택설층(3)을 성장시킨 다음 P헬(4)을 형성하여 그 P웰(4)에 대한 SiO2산화물층(5)을 형성하며, 게이트를 형성하고, 그후 N+불순물, P+불순물을 확산시키며, PSG층(6)을 형성하고, 콘택트를 형성해 금속층을 적층하는 것을 특징으로하는 바이-씨모스 반도체소자의 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019890005700A KR900017143A (ko) | 1989-04-29 | 1989-04-29 | 바이-씨모스 반도체소자 제조방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019890005700A KR900017143A (ko) | 1989-04-29 | 1989-04-29 | 바이-씨모스 반도체소자 제조방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR900017143A true KR900017143A (ko) | 1990-11-15 |
Family
ID=67776974
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019890005700A KR900017143A (ko) | 1989-04-29 | 1989-04-29 | 바이-씨모스 반도체소자 제조방법 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR900017143A (ko) |
-
1989
- 1989-04-29 KR KR1019890005700A patent/KR900017143A/ko not_active Application Discontinuation
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |