KR890013788A - 쌍극성 직접 회로소자 제조방법 - Google Patents
쌍극성 직접 회로소자 제조방법 Download PDFInfo
- Publication number
- KR890013788A KR890013788A KR1019880001647A KR880001647A KR890013788A KR 890013788 A KR890013788 A KR 890013788A KR 1019880001647 A KR1019880001647 A KR 1019880001647A KR 880001647 A KR880001647 A KR 880001647A KR 890013788 A KR890013788 A KR 890013788A
- Authority
- KR
- South Korea
- Prior art keywords
- integrated circuit
- circuit device
- device manufacturing
- bipolar integrated
- oxide layer
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Abstract
내용 없음.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도의 (가) 내지 (바)는 본 발명의 쌍극성 집적회로소자 제조방법에 의한 제조 공정도.
Claims (1)
- N+형 매입층(2)을 형성한 N-형 규소기판(1)에 옥사이드층(3)(3′)을 형성하고, N-형 에피텍셜층(4)을 형성하여 옥사이드층(3)(3′)의 상측부에는 얇은 두께의 N-형 에피텍셜층(4)이 형성되게 하며, 옥사이드층(5)을 형성하여 각 소자들이 옥사이드에 의하여 아이솔레이션되게 P-형 규소기판(1)의 옥사이드층(3)(3′)과 연결시키도록 제조함을 특징으로 하는 쌍극성 집적회로소자 제조방법.※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019880001647A KR900008818B1 (ko) | 1988-02-15 | 1988-02-15 | 쌍극성 집적회로소자 제조방법 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019880001647A KR900008818B1 (ko) | 1988-02-15 | 1988-02-15 | 쌍극성 집적회로소자 제조방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR890013788A true KR890013788A (ko) | 1989-09-26 |
| KR900008818B1 KR900008818B1 (ko) | 1990-11-30 |
Family
ID=19272318
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019880001647A KR900008818B1 (ko) | 1988-02-15 | 1988-02-15 | 쌍극성 집적회로소자 제조방법 |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR900008818B1 (ko) |
-
1988
- 1988-02-15 KR KR1019880001647A patent/KR900008818B1/ko not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR900008818B1 (ko) | 1990-11-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR870005459A (ko) | 반도체장치 | |
| KR910010728A (ko) | 복합형 직접회로소자 | |
| KR880005662A (ko) | 집적 회로 제조공정 | |
| KR870003575A (ko) | 반도체장치의 형성방법 | |
| KR900017129A (ko) | 반도체 소자용 배면 금속화 스킴(scheme) 및 그의 제조 방법 | |
| KR910019152A (ko) | 실리콘 웨이퍼 | |
| KR890013788A (ko) | 쌍극성 직접 회로소자 제조방법 | |
| KR920000146A (ko) | 고전압 직접회로 | |
| KR860001488A (ko) | 바이폴러 트랜지스터와 iil이 있는 반도체 장치 | |
| KR910008853A (ko) | 반도체장치와 그 제조방법 | |
| KR900004040A (ko) | 반도체 집적회로 디바이스 | |
| KR910003802A (ko) | 반도체장치 및 그 제조방법 | |
| KR890005834A (ko) | 반도체장치 | |
| KR890008966A (ko) | 반도체장치의 배선접속부 | |
| KR900013615A (ko) | 마스타 슬라이스 방식의 반도체 집적회로 장치 | |
| KR920017213A (ko) | 반도체 장치의 소자격리 방법 | |
| KR930003290A (ko) | 메탈콘택 형성방법 및 그 구조 | |
| KR900013636A (ko) | 마스타슬라이스 방식의 반도체 집적회로 장치 및 그 제조방법 | |
| KR910017664A (ko) | 바이폴라 트랜지스터 제조방법 | |
| KR890008955A (ko) | 반도체장치의 분리층 제조방법 | |
| KR840008218A (ko) | 반도체 장치 | |
| KR930001475A (ko) | 집적 회로 장치 | |
| KR890017772A (ko) | 인(p)을 전계주입한 반도체소자의 제조방법 | |
| KR910005472A (ko) | 반도체 소자의 dc 제조 방법 | |
| KR890001171A (ko) | 반도체 장치의 폴리사이드 구조 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| N231 | Notification of change of applicant | ||
| G160 | Decision to publish patent application | ||
| E701 | Decision to grant or registration of patent right | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20051019 Year of fee payment: 16 |
|
| LAPS | Lapse due to unpaid annual fee |