FR2026335A1 - - Google Patents

Info

Publication number
FR2026335A1
FR2026335A1 FR6943169A FR6943169A FR2026335A1 FR 2026335 A1 FR2026335 A1 FR 2026335A1 FR 6943169 A FR6943169 A FR 6943169A FR 6943169 A FR6943169 A FR 6943169A FR 2026335 A1 FR2026335 A1 FR 2026335A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR6943169A
Other versions
FR2026335B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19681815158 external-priority patent/DE1815158C3/de
Application filed by Siemens AG filed Critical Siemens AG
Publication of FR2026335A1 publication Critical patent/FR2026335A1/fr
Application granted granted Critical
Publication of FR2026335B1 publication Critical patent/FR2026335B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03J—TUNING RESONANT CIRCUITS; SELECTING RESONANT CIRCUITS
    • H03J3/00—Continuous tuning
    • H03J3/28—Continuous tuning of more than one resonant circuit simultaneously, the tuning frequencies of the circuits having a substantially constant difference throughout the tuning range
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/92—Capacitors having potential barriers
    • H01L29/93—Variable capacitance diodes, e.g. varactors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
    • Y02T50/00—Aeronautics or air transport
    • Y02T50/10—Drag reduction

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Light Receiving Elements (AREA)
FR696943169A 1968-12-17 1969-12-12 Expired FR2026335B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19681815158 DE1815158C3 (de) 1968-12-17 Verfahren zum Herstellen einer HaIbleiter-Kapazitatsdiode

Publications (2)

Publication Number Publication Date
FR2026335A1 true FR2026335A1 (fr) 1970-09-18
FR2026335B1 FR2026335B1 (fr) 1974-03-01

Family

ID=5716476

Family Applications (1)

Application Number Title Priority Date Filing Date
FR696943169A Expired FR2026335B1 (fr) 1968-12-17 1969-12-12

Country Status (8)

Country Link
US (1) US3679948A (fr)
JP (1) JPS5115395B1 (fr)
AT (1) AT293565B (fr)
CH (1) CH504107A (fr)
FR (1) FR2026335B1 (fr)
GB (1) GB1290718A (fr)
NL (1) NL6915021A (fr)
SE (1) SE336844B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2435131A1 (fr) * 1978-07-29 1980-03-28 Philips Nv Diode capacitive

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57103367A (en) * 1980-12-18 1982-06-26 Clarion Co Ltd Variable-capacitance device

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3335337A (en) * 1962-03-31 1967-08-08 Auritsu Electronic Works Ltd Negative resistance semiconductor devices

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
REVUE RUSSE "RADIO ENGINEERING AND ELECTRONIC PHYSICS", VOLUME 11, OCTOBRE 1966, "A VARIABLE CAPACITOR WITH A HIGH CAPACITANCE-RANGE", O.F.ASTAKHOV ET AL. PAGES 1573-1578.) *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2435131A1 (fr) * 1978-07-29 1980-03-28 Philips Nv Diode capacitive

Also Published As

Publication number Publication date
FR2026335B1 (fr) 1974-03-01
SE336844B (fr) 1971-07-19
NL6915021A (fr) 1970-06-19
GB1290718A (fr) 1972-09-27
US3679948A (en) 1972-07-25
JPS5115395B1 (fr) 1976-05-17
DE1815158A1 (de) 1970-06-25
DE1815158B2 (de) 1976-12-23
CH504107A (de) 1971-02-28
AT293565B (de) 1971-10-11

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Legal Events

Date Code Title Description
ST Notification of lapse