FR2360994A1 - Circuit integre semi-conducteur, logique a transistors a induction statique - Google Patents
Circuit integre semi-conducteur, logique a transistors a induction statiqueInfo
- Publication number
- FR2360994A1 FR2360994A1 FR7723955A FR7723955A FR2360994A1 FR 2360994 A1 FR2360994 A1 FR 2360994A1 FR 7723955 A FR7723955 A FR 7723955A FR 7723955 A FR7723955 A FR 7723955A FR 2360994 A1 FR2360994 A1 FR 2360994A1
- Authority
- FR
- France
- Prior art keywords
- region
- conductivity type
- conductivity
- heavily doped
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 230000006698 induction Effects 0.000 title abstract 2
- 230000003068 static effect Effects 0.000 title abstract 2
- 239000012535 impurity Substances 0.000 abstract 2
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/082—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using bipolar transistors
- H03K19/091—Integrated injection logic or merged transistor logic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0214—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L
- H01L27/0218—Particular design considerations for integrated circuits for internal polarisation, e.g. I2L of field effect structures
- H01L27/0225—Charge injection in static induction transistor logic structures [SITL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
- H01L27/0716—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with vertical bipolar transistors and diodes, or capacitors, or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
- H01L27/0711—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors
- H01L27/0722—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with bipolar transistors and diodes, or capacitors, or resistors in combination with lateral bipolar transistors and diodes, or capacitors, or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0804—Emitter regions of bipolar transistors
- H01L29/0808—Emitter regions of bipolar transistors of lateral transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1066—Gate region of field-effect devices with PN junction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7327—Inverse vertical transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/735—Lateral transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Junction Field-Effect Transistors (AREA)
- Logic Circuits (AREA)
- Bipolar Transistors (AREA)
Abstract
a. Circuit Intégré semi-conducteur, logique à transistors à induction statique. b. Circuit comportant une plaquette semi-conductrice ayant une première et une seconde surfaces principales, une région semi-conductrice d'un premier type de conductivité, à faible concentration en impureté, au moins une région fortement dopée d'un second type de conductivité opposé au premier, formée dans la région semi-conductrice et formant une région d'électrode de courant de l'autre transistor ainsi qu'une région d'électrode de commande pour le transistor SIT, au moins une région de canal d'un premier type de conductivité à faible concentration en impureté, au moins une région de drain, fortement dopée à premier type de conductivité, formée dans la première surface principale au voisinage de la région de canal, et une région de source, fortement dopée d'un premier type de conductivité, au voisinage de la région serai-conductrice, sous la région de drain. c. Circuits pour applications électroniques travaillant à grande vitesse, à faible consommation de courant
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP51092467A JPS5838938B2 (ja) | 1976-08-03 | 1976-08-03 | 半導体集積回路 |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2360994A1 true FR2360994A1 (fr) | 1978-03-03 |
FR2360994B1 FR2360994B1 (fr) | 1983-11-04 |
Family
ID=14055136
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7723955A Granted FR2360994A1 (fr) | 1976-08-03 | 1977-08-03 | Circuit integre semi-conducteur, logique a transistors a induction statique |
Country Status (7)
Country | Link |
---|---|
US (1) | US4811064A (fr) |
JP (1) | JPS5838938B2 (fr) |
DE (1) | DE2734997A1 (fr) |
FR (1) | FR2360994A1 (fr) |
GB (1) | GB1599177A (fr) |
IT (1) | IT1085678B (fr) |
NL (2) | NL186282C (fr) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2408220A1 (fr) * | 1977-11-05 | 1979-06-01 | Nippon Musical Instruments Mfg | Dispositif semi-conducteur integre sitl comprenant un transistor a induction statique |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5335477A (en) * | 1976-09-14 | 1978-04-01 | Toshiba Corp | Semiconductor unit |
US4284997A (en) * | 1977-07-07 | 1981-08-18 | Zaidan Hojin Handotai Kenkyu Shinkokai | Static induction transistor and its applied devices |
JPS5936832B2 (ja) * | 1978-03-14 | 1984-09-06 | 株式会社日立製作所 | 半導体スイッチング素子 |
JPH01106029U (fr) * | 1988-01-08 | 1989-07-17 | ||
JP2538984B2 (ja) * | 1988-04-20 | 1996-10-02 | 株式会社豊田自動織機製作所 | 静電誘導形半導体装置 |
US5177029A (en) * | 1989-03-28 | 1993-01-05 | Matsushita Electric Works, Ltd. | Method for manufacturing static induction type semiconductor device enhancement mode power |
JPH0523362U (ja) * | 1991-03-14 | 1993-03-26 | 株式会社カンセイ | ハンドルスイツチ |
JP3086713B2 (ja) * | 1991-05-10 | 2000-09-11 | 株式会社豊田自動織機製作所 | 静電誘導形半導体装置 |
US5313234A (en) * | 1991-07-26 | 1994-05-17 | Sayett Group, Inc. | Liquid crystal projector |
US5612547A (en) * | 1993-10-18 | 1997-03-18 | Northrop Grumman Corporation | Silicon carbide static induction transistor |
US5498997A (en) * | 1994-12-23 | 1996-03-12 | Schiebold; Cristopher F. | Transformerless audio amplifier |
WO2004104825A1 (fr) * | 2003-05-15 | 2004-12-02 | Applianz Technologies, Inc. | Systemes et procedes de creation et d'acces a des ordinateurs simules par logiciel |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3430113A (en) * | 1965-10-04 | 1969-02-25 | Us Air Force | Current modulated field effect transistor |
FR2138905A1 (fr) * | 1971-05-22 | 1973-01-05 | Philips Nv | |
US3827034A (en) * | 1972-09-14 | 1974-07-30 | Ferranti Ltd | Semiconductor information storage devices |
FR2335052A1 (fr) * | 1975-12-09 | 1977-07-08 | Zaidan Hojin Handotai Kenkyu | Circuit integre |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3354362A (en) * | 1965-03-23 | 1967-11-21 | Hughes Aircraft Co | Planar multi-channel field-effect tetrode |
DE1764911A1 (de) * | 1968-09-02 | 1971-12-02 | Telefunken Patent | Unipolaranordnung |
US4199775A (en) * | 1974-09-03 | 1980-04-22 | Bell Telephone Laboratories, Incorporated | Integrated circuit and method for fabrication thereof |
JPS5342676B2 (fr) * | 1974-11-12 | 1978-11-14 | ||
JPS52128082A (en) * | 1976-04-20 | 1977-10-27 | Matsushita Electric Ind Co Ltd | Semiconductor device and its manufacture |
JPS5923114B2 (ja) * | 1976-06-17 | 1984-05-30 | 松下電器産業株式会社 | 半導体装置 |
JPS6022504B2 (ja) * | 1976-06-18 | 1985-06-03 | 松下電器産業株式会社 | 半導体装置の製造方法 |
JPS608628B2 (ja) * | 1976-07-05 | 1985-03-04 | ヤマハ株式会社 | 半導体集積回路装置 |
-
1976
- 1976-08-03 JP JP51092467A patent/JPS5838938B2/ja not_active Expired
-
1977
- 1977-08-01 GB GB32256/77A patent/GB1599177A/en not_active Expired
- 1977-08-02 NL NLAANVRAGE7708526,A patent/NL186282C/xx not_active IP Right Cessation
- 1977-08-02 IT IT26427/77A patent/IT1085678B/it active
- 1977-08-03 DE DE19772734997 patent/DE2734997A1/de active Granted
- 1977-08-03 FR FR7723955A patent/FR2360994A1/fr active Granted
-
1987
- 1987-01-28 US US07/009,017 patent/US4811064A/en not_active Expired - Fee Related
-
1989
- 1989-12-29 NL NL8903191A patent/NL8903191A/nl not_active Application Discontinuation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3430113A (en) * | 1965-10-04 | 1969-02-25 | Us Air Force | Current modulated field effect transistor |
FR2138905A1 (fr) * | 1971-05-22 | 1973-01-05 | Philips Nv | |
US3827034A (en) * | 1972-09-14 | 1974-07-30 | Ferranti Ltd | Semiconductor information storage devices |
FR2335052A1 (fr) * | 1975-12-09 | 1977-07-08 | Zaidan Hojin Handotai Kenkyu | Circuit integre |
Non-Patent Citations (2)
Title |
---|
EXBK/74 * |
EXBK/76 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2408220A1 (fr) * | 1977-11-05 | 1979-06-01 | Nippon Musical Instruments Mfg | Dispositif semi-conducteur integre sitl comprenant un transistor a induction statique |
Also Published As
Publication number | Publication date |
---|---|
JPS5318392A (en) | 1978-02-20 |
DE2734997A1 (de) | 1978-02-16 |
NL7708526A (nl) | 1978-02-07 |
NL8903191A (nl) | 1990-04-02 |
DE2734997C2 (fr) | 1993-07-01 |
FR2360994B1 (fr) | 1983-11-04 |
GB1599177A (en) | 1981-09-30 |
NL186282B (nl) | 1990-05-16 |
JPS5838938B2 (ja) | 1983-08-26 |
NL186282C (nl) | 1990-10-16 |
IT1085678B (it) | 1985-05-28 |
US4811064A (en) | 1989-03-07 |
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