FI117944B - Menetelmä siirtymämetallinitridiohutkalvojen kasvattamiseksi - Google Patents

Menetelmä siirtymämetallinitridiohutkalvojen kasvattamiseksi Download PDF

Info

Publication number
FI117944B
FI117944B FI992234A FI19992234A FI117944B FI 117944 B FI117944 B FI 117944B FI 992234 A FI992234 A FI 992234A FI 19992234 A FI19992234 A FI 19992234A FI 117944 B FI117944 B FI 117944B
Authority
FI
Finland
Prior art keywords
group
advantageously
metal
tungsten
boron
Prior art date
Application number
FI992234A
Other languages
English (en)
Finnish (fi)
Swedish (sv)
Other versions
FI19992234A (fi
Inventor
Pekka Soininen
Kai-Erik Elers
Sari Kaipio
Ville Saanila
Suvi Paeivikki Haukka
Original Assignee
Asm Int
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Asm Int filed Critical Asm Int
Priority to FI992234A priority Critical patent/FI117944B/fi
Priority to FI20000564A priority patent/FI119941B/fi
Priority to TW089121352A priority patent/TW541351B/zh
Priority to US09/687,205 priority patent/US6475276B1/en
Priority to AU79268/00A priority patent/AU7926800A/en
Priority to JP2001529476A priority patent/JP4713041B2/ja
Priority to PCT/FI2000/000895 priority patent/WO2001027347A1/fr
Priority to EP00969596A priority patent/EP1242647B1/fr
Priority to DE60004566T priority patent/DE60004566T2/de
Priority to KR1020027004825A priority patent/KR100744219B1/ko
Priority to US09/687,204 priority patent/US6482262B1/en
Priority to US10/110,730 priority patent/US6863727B1/en
Priority to PCT/US2000/028654 priority patent/WO2001029893A1/fr
Priority to PCT/US2000/028537 priority patent/WO2001029280A1/fr
Priority to AU12082/01A priority patent/AU1208201A/en
Priority to EP00973583A priority patent/EP1221178A1/fr
Priority to JP2001531142A priority patent/JP4746234B2/ja
Priority to US10/049,125 priority patent/US6902763B1/en
Priority to KR1020027004824A priority patent/KR100737901B1/ko
Priority to AU10884/01A priority patent/AU1088401A/en
Priority to JP2001532259A priority patent/JP4965782B2/ja
Publication of FI19992234A publication Critical patent/FI19992234A/fi
Priority to US10/210,715 priority patent/US6821889B2/en
Priority to US10/246,131 priority patent/US6800552B2/en
Priority to US10/969,297 priority patent/US7329590B2/en
Priority to US10/990,424 priority patent/US7144809B2/en
Priority to US11/288,872 priority patent/US7749871B2/en
Priority to US11/634,818 priority patent/US7485340B2/en
Application granted granted Critical
Publication of FI117944B publication Critical patent/FI117944B/fi

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/38—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45531—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations specially adapted for making ternary or higher compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C23C16/45534—Use of auxiliary reactants other than used for contributing to the composition of the main film, e.g. catalysts, activators or scavengers
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H01L21/28562—Selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76855—After-treatment introducing at least one additional element into the layer
    • H01L21/76856—After-treatment introducing at least one additional element into the layer by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
FI992234A 1959-10-10 1999-10-15 Menetelmä siirtymämetallinitridiohutkalvojen kasvattamiseksi FI117944B (fi)

Priority Applications (27)

Application Number Priority Date Filing Date Title
FI992234A FI117944B (fi) 1999-10-15 1999-10-15 Menetelmä siirtymämetallinitridiohutkalvojen kasvattamiseksi
FI20000564A FI119941B (fi) 1999-10-15 2000-03-10 Menetelmä nanolaminaattien valmistamiseksi
TW089121352A TW541351B (en) 1999-10-15 2000-10-12 Method of depositing transition metal nitride thin films
AU79268/00A AU7926800A (en) 1999-10-15 2000-10-13 Method of depositing transition metal nitride thin films
US09/687,205 US6475276B1 (en) 1999-10-15 2000-10-13 Production of elemental thin films using a boron-containing reducing agent
PCT/FI2000/000895 WO2001027347A1 (fr) 1999-10-15 2000-10-13 Procede de depot de couches minces en nitrure de metal de transition
EP00969596A EP1242647B1 (fr) 1999-10-15 2000-10-13 Procede de depot de couches minces en nitrure de metal de transition
DE60004566T DE60004566T2 (de) 1999-10-15 2000-10-13 Verfahren zum abscheiden von dünnen übergangsmetall-nitridfilmen
KR1020027004825A KR100744219B1 (ko) 1999-10-15 2000-10-13 전이 금속 질화물 박막의 증착 방법
US09/687,204 US6482262B1 (en) 1959-10-10 2000-10-13 Deposition of transition metal carbides
US10/110,730 US6863727B1 (en) 1999-10-15 2000-10-13 Method of depositing transition metal nitride thin films
JP2001529476A JP4713041B2 (ja) 1999-10-15 2000-10-13 遷移金属窒化物薄膜の堆積方法
PCT/US2000/028654 WO2001029893A1 (fr) 1999-10-15 2000-10-16 Procede de depot de couches minces nanostratifiees sur des surfaces sensibles
AU12082/01A AU1208201A (en) 1999-10-15 2000-10-16 Method for depositing nanolaminate thin films on sensitive surfaces
EP00973583A EP1221178A1 (fr) 1999-10-15 2000-10-16 Procede de depot de couches minces nanostratifiees sur des surfaces sensibles
JP2001531142A JP4746234B2 (ja) 1999-10-15 2000-10-16 感受性表面上にナノラミネート薄膜を堆積するための方法
US10/049,125 US6902763B1 (en) 1999-10-15 2000-10-16 Method for depositing nanolaminate thin films on sensitive surfaces
KR1020027004824A KR100737901B1 (ko) 1999-10-15 2000-10-16 민감한 표면에 나노적층박막을 증착하는 방법
AU10884/01A AU1088401A (en) 1999-10-15 2000-10-16 Deposition of transition metal carbides
JP2001532259A JP4965782B2 (ja) 1999-10-15 2000-10-16 遷移金属炭化物の堆積
PCT/US2000/028537 WO2001029280A1 (fr) 1999-10-15 2000-10-16 Depot de carbures de metal de transition
US10/210,715 US6821889B2 (en) 1999-10-15 2002-07-30 Production of elemental thin films using a boron-containing reducing agent
US10/246,131 US6800552B2 (en) 1999-10-15 2002-09-17 Deposition of transition metal carbides
US10/969,297 US7329590B2 (en) 1999-10-15 2004-10-19 Method for depositing nanolaminate thin films on sensitive surfaces
US10/990,424 US7144809B2 (en) 1999-10-15 2004-11-16 Production of elemental films using a boron-containing reducing agent
US11/288,872 US7749871B2 (en) 1999-10-15 2005-11-28 Method for depositing nanolaminate thin films on sensitive surfaces
US11/634,818 US7485340B2 (en) 1999-10-15 2006-12-05 Production of elemental films using a boron-containing reducing agent

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI992234A FI117944B (fi) 1999-10-15 1999-10-15 Menetelmä siirtymämetallinitridiohutkalvojen kasvattamiseksi
FI992234 1999-10-15

Publications (2)

Publication Number Publication Date
FI19992234A FI19992234A (fi) 2001-04-16
FI117944B true FI117944B (fi) 2007-04-30

Family

ID=8555459

Family Applications (1)

Application Number Title Priority Date Filing Date
FI992234A FI117944B (fi) 1959-10-10 1999-10-15 Menetelmä siirtymämetallinitridiohutkalvojen kasvattamiseksi

Country Status (9)

Country Link
US (1) US6863727B1 (fr)
EP (1) EP1242647B1 (fr)
JP (1) JP4713041B2 (fr)
KR (1) KR100744219B1 (fr)
AU (1) AU7926800A (fr)
DE (1) DE60004566T2 (fr)
FI (1) FI117944B (fr)
TW (1) TW541351B (fr)
WO (1) WO2001027347A1 (fr)

Families Citing this family (125)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6482262B1 (en) * 1959-10-10 2002-11-19 Asm Microchemistry Oy Deposition of transition metal carbides
US6727169B1 (en) * 1999-10-15 2004-04-27 Asm International, N.V. Method of making conformal lining layers for damascene metallization
US6319766B1 (en) 2000-02-22 2001-11-20 Applied Materials, Inc. Method of tantalum nitride deposition by tantalum oxide densification
FI20001694A0 (fi) * 2000-07-20 2000-07-20 Asm Microchemistry Oy Menetelmä ohutkalvon kasvattamiseksi substraatille
KR100815009B1 (ko) 2000-09-28 2008-03-18 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 산화물, 규산염 및 인산염의 증기를 이용한 석출
US6825447B2 (en) 2000-12-29 2004-11-30 Applied Materials, Inc. Apparatus and method for uniform substrate heating and contaminate collection
US6765178B2 (en) 2000-12-29 2004-07-20 Applied Materials, Inc. Chamber for uniform substrate heating
US6811814B2 (en) 2001-01-16 2004-11-02 Applied Materials, Inc. Method for growing thin films by catalytic enhancement
US6951804B2 (en) 2001-02-02 2005-10-04 Applied Materials, Inc. Formation of a tantalum-nitride layer
US6660126B2 (en) 2001-03-02 2003-12-09 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6878206B2 (en) 2001-07-16 2005-04-12 Applied Materials, Inc. Lid assembly for a processing system to facilitate sequential deposition techniques
US6734020B2 (en) 2001-03-07 2004-05-11 Applied Materials, Inc. Valve control system for atomic layer deposition chamber
FI109770B (fi) 2001-03-16 2002-10-15 Asm Microchemistry Oy Menetelmä metallinitridiohutkalvojen valmistamiseksi
US7589017B2 (en) 2001-05-22 2009-09-15 Novellus Systems, Inc. Methods for growing low-resistivity tungsten film
US7005372B2 (en) * 2003-01-21 2006-02-28 Novellus Systems, Inc. Deposition of tungsten nitride
US7955972B2 (en) 2001-05-22 2011-06-07 Novellus Systems, Inc. Methods for growing low-resistivity tungsten for high aspect ratio and small features
US7141494B2 (en) 2001-05-22 2006-11-28 Novellus Systems, Inc. Method for reducing tungsten film roughness and improving step coverage
US9076843B2 (en) 2001-05-22 2015-07-07 Novellus Systems, Inc. Method for producing ultra-thin tungsten layers with improved step coverage
JP2005518088A (ja) 2001-07-16 2005-06-16 アプライド　マテリアルズ　インコーポレイテッド タングステン複合膜の形成
US9051641B2 (en) 2001-07-25 2015-06-09 Applied Materials, Inc. Cobalt deposition on barrier surfaces
JP4938962B2 (ja) 2001-09-14 2012-05-23 エーエスエム インターナショナル エヌ．ヴェー． ゲッタリング反応物を用いるａｌｄによる金属窒化物堆積
US6607976B2 (en) * 2001-09-25 2003-08-19 Applied Materials, Inc. Copper interconnect barrier layer structure and formation method
TW589684B (en) 2001-10-10 2004-06-01 Applied Materials Inc Method for depositing refractory metal layers employing sequential deposition techniques
US6916398B2 (en) 2001-10-26 2005-07-12 Applied Materials, Inc. Gas delivery apparatus and method for atomic layer deposition
US6821891B2 (en) 2001-11-16 2004-11-23 Applied Materials, Inc. Atomic layer deposition of copper using a reducing gas and non-fluorinated copper precursors
US6809026B2 (en) 2001-12-21 2004-10-26 Applied Materials, Inc. Selective deposition of a barrier layer on a metal film
US6939801B2 (en) 2001-12-21 2005-09-06 Applied Materials, Inc. Selective deposition of a barrier layer on a dielectric material
CN1643179B (zh) * 2002-01-17 2010-05-26 松德沃技术公司 Ald装置和方法
US6620670B2 (en) 2002-01-18 2003-09-16 Applied Materials, Inc. Process conditions and precursors for atomic layer deposition (ALD) of AL2O3
US6911391B2 (en) 2002-01-26 2005-06-28 Applied Materials, Inc. Integration of titanium and titanium nitride layers
US6827978B2 (en) 2002-02-11 2004-12-07 Applied Materials, Inc. Deposition of tungsten films
US6833161B2 (en) 2002-02-26 2004-12-21 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
CN100360710C (zh) 2002-03-28 2008-01-09 哈佛学院院长等 二氧化硅纳米层压材料的气相沉积
US6720027B2 (en) 2002-04-08 2004-04-13 Applied Materials, Inc. Cyclical deposition of a variable content titanium silicon nitride layer
US6932871B2 (en) 2002-04-16 2005-08-23 Applied Materials, Inc. Multi-station deposition apparatus and method
US7560581B2 (en) 2002-07-12 2009-07-14 President And Fellows Of Harvard College Vapor deposition of tungsten nitride
US7186385B2 (en) 2002-07-17 2007-03-06 Applied Materials, Inc. Apparatus for providing gas to a processing chamber
US7150789B2 (en) * 2002-07-29 2006-12-19 Micron Technology, Inc. Atomic layer deposition methods
US6753271B2 (en) 2002-08-15 2004-06-22 Micron Technology, Inc. Atomic layer deposition methods
US6890596B2 (en) 2002-08-15 2005-05-10 Micron Technology, Inc. Deposition methods
US6673701B1 (en) 2002-08-27 2004-01-06 Micron Technology, Inc. Atomic layer deposition methods
JP4083512B2 (ja) * 2002-08-30 2008-04-30 東京エレクトロン株式会社 基板処理装置
US6753248B1 (en) 2003-01-27 2004-06-22 Applied Materials, Inc. Post metal barrier/adhesion film
KR20060054387A (ko) 2003-08-04 2006-05-22 에이에스엠 아메리카, 인코포레이티드 증착 전 게르마늄 표면 처리 방법
US7754604B2 (en) 2003-08-26 2010-07-13 Novellus Systems, Inc. Reducing silicon attack and improving resistivity of tungsten nitride film
KR101108304B1 (ko) * 2004-02-26 2012-01-25 노벨러스 시스템즈, 인코포레이티드 질화 텅스텐의 증착
US7405143B2 (en) 2004-03-25 2008-07-29 Asm International N.V. Method for fabricating a seed layer
US8323754B2 (en) 2004-05-21 2012-12-04 Applied Materials, Inc. Stabilization of high-k dielectric materials
US8119210B2 (en) 2004-05-21 2012-02-21 Applied Materials, Inc. Formation of a silicon oxynitride layer on a high-k dielectric material
US7588988B2 (en) 2004-08-31 2009-09-15 Micron Technology, Inc. Method of forming apparatus having oxide films formed using atomic layer deposition
KR100594626B1 (ko) * 2004-09-02 2006-07-07 한양대학교 산학협력단 원자층 증착법을 이용한 질화막의 형성 방법
JP4592373B2 (ja) * 2004-09-30 2010-12-01 株式会社トリケミカル研究所 導電性モリブデンナイトライドゲート電極膜の形成方法
US7235501B2 (en) 2004-12-13 2007-06-26 Micron Technology, Inc. Lanthanum hafnium oxide dielectrics
EP1851794A1 (fr) 2005-02-22 2007-11-07 ASM America, Inc. Pre-traitement de surfaces au plasma pour le depot de couche atomique
US7767363B2 (en) 2005-06-24 2010-08-03 Micron Technology, Inc. Methods for photo-processing photo-imageable material
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US8110469B2 (en) 2005-08-30 2012-02-07 Micron Technology, Inc. Graded dielectric layers
US7582562B2 (en) 2005-10-06 2009-09-01 Micron Technology, Inc. Atomic layer deposition methods
US8993055B2 (en) * 2005-10-27 2015-03-31 Asm International N.V. Enhanced thin film deposition
US7850779B2 (en) 2005-11-04 2010-12-14 Applied Materisals, Inc. Apparatus and process for plasma-enhanced atomic layer deposition
US7592251B2 (en) 2005-12-08 2009-09-22 Micron Technology, Inc. Hafnium tantalum titanium oxide films
US7759747B2 (en) 2006-08-31 2010-07-20 Micron Technology, Inc. Tantalum aluminum oxynitride high-κ dielectric
US8268409B2 (en) * 2006-10-25 2012-09-18 Asm America, Inc. Plasma-enhanced deposition of metal carbide films
US8795771B2 (en) 2006-10-27 2014-08-05 Sean T. Barry ALD of metal-containing films using cyclopentadienyl compounds
US7611751B2 (en) * 2006-11-01 2009-11-03 Asm America, Inc. Vapor deposition of metal carbide films
US7598170B2 (en) * 2007-01-26 2009-10-06 Asm America, Inc. Plasma-enhanced ALD of tantalum nitride films
US7595270B2 (en) 2007-01-26 2009-09-29 Asm America, Inc. Passivated stoichiometric metal nitride films
US7713874B2 (en) * 2007-05-02 2010-05-11 Asm America, Inc. Periodic plasma annealing in an ALD-type process
US8017182B2 (en) 2007-06-21 2011-09-13 Asm International N.V. Method for depositing thin films by mixed pulsed CVD and ALD
US7638170B2 (en) 2007-06-21 2009-12-29 Asm International N.V. Low resistivity metal carbonitride thin film deposition by atomic layer deposition
KR101275025B1 (ko) * 2007-07-12 2013-06-14 삼성전자주식회사 반도체 소자용 배선 구조물 및 이의 형성방법
US7655567B1 (en) 2007-07-24 2010-02-02 Novellus Systems, Inc. Methods for improving uniformity and resistivity of thin tungsten films
US7772114B2 (en) 2007-12-05 2010-08-10 Novellus Systems, Inc. Method for improving uniformity and adhesion of low resistivity tungsten film
US8053365B2 (en) 2007-12-21 2011-11-08 Novellus Systems, Inc. Methods for forming all tungsten contacts and lines
US8062977B1 (en) 2008-01-31 2011-11-22 Novellus Systems, Inc. Ternary tungsten-containing resistive thin films
KR101540077B1 (ko) 2008-04-16 2015-07-28 에이에스엠 아메리카, 인코포레이티드 알루미늄 탄화수소 화합물들을 이용한 금속 카바이드 막들의 원자층 증착법
US7666474B2 (en) 2008-05-07 2010-02-23 Asm America, Inc. Plasma-enhanced pulsed deposition of metal carbide films
US8058170B2 (en) 2008-06-12 2011-11-15 Novellus Systems, Inc. Method for depositing thin tungsten film with low resistivity and robust micro-adhesion characteristics
US20100062149A1 (en) 2008-09-08 2010-03-11 Applied Materials, Inc. Method for tuning a deposition rate during an atomic layer deposition process
US20100267230A1 (en) 2009-04-16 2010-10-21 Anand Chandrashekar Method for forming tungsten contacts and interconnects with small critical dimensions
US9159571B2 (en) 2009-04-16 2015-10-13 Lam Research Corporation Tungsten deposition process using germanium-containing reducing agent
US10256142B2 (en) 2009-08-04 2019-04-09 Novellus Systems, Inc. Tungsten feature fill with nucleation inhibition
US8207062B2 (en) 2009-09-09 2012-06-26 Novellus Systems, Inc. Method for improving adhesion of low resistivity tungsten/tungsten nitride layers
KR101712040B1 (ko) 2009-10-20 2017-03-03 에이에스엠 인터내셔널 엔.브이. 유전체 막들의 부동태화를 위한 공정들
TWI602283B (zh) 2012-03-27 2017-10-11 諾發系統有限公司 鎢特徵部塡充
US9034760B2 (en) 2012-06-29 2015-05-19 Novellus Systems, Inc. Methods of forming tensile tungsten films and compressive tungsten films
US9969622B2 (en) * 2012-07-26 2018-05-15 Lam Research Corporation Ternary tungsten boride nitride films and methods for forming same
US8975184B2 (en) 2012-07-27 2015-03-10 Novellus Systems, Inc. Methods of improving tungsten contact resistance in small critical dimension features
JP6007031B2 (ja) * 2012-08-23 2016-10-12 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
US8853080B2 (en) 2012-09-09 2014-10-07 Novellus Systems, Inc. Method for depositing tungsten film with low roughness and low resistivity
JP6009870B2 (ja) 2012-09-11 2016-10-19 株式会社日立国際電気 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
US9412602B2 (en) 2013-03-13 2016-08-09 Asm Ip Holding B.V. Deposition of smooth metal nitride films
KR101397340B1 (ko) 2013-03-13 2014-05-20 이승윤 금속 표면처리 방법 및 이에 따른 금속 처리물
US8846550B1 (en) 2013-03-14 2014-09-30 Asm Ip Holding B.V. Silane or borane treatment of metal thin films
US8841182B1 (en) 2013-03-14 2014-09-23 Asm Ip Holding B.V. Silane and borane treatments for titanium carbide films
US9153486B2 (en) 2013-04-12 2015-10-06 Lam Research Corporation CVD based metal/semiconductor OHMIC contact for high volume manufacturing applications
US9589808B2 (en) 2013-12-19 2017-03-07 Lam Research Corporation Method for depositing extremely low resistivity tungsten
US9394609B2 (en) 2014-02-13 2016-07-19 Asm Ip Holding B.V. Atomic layer deposition of aluminum fluoride thin films
US10643925B2 (en) 2014-04-17 2020-05-05 Asm Ip Holding B.V. Fluorine-containing conductive films
US10002936B2 (en) 2014-10-23 2018-06-19 Asm Ip Holding B.V. Titanium aluminum and tantalum aluminum thin films
US9953984B2 (en) 2015-02-11 2018-04-24 Lam Research Corporation Tungsten for wordline applications
US9978605B2 (en) 2015-05-27 2018-05-22 Lam Research Corporation Method of forming low resistivity fluorine free tungsten film without nucleation
US9754824B2 (en) 2015-05-27 2017-09-05 Lam Research Corporation Tungsten films having low fluorine content
US9613818B2 (en) 2015-05-27 2017-04-04 Lam Research Corporation Deposition of low fluorine tungsten by sequential CVD process
US9941425B2 (en) 2015-10-16 2018-04-10 Asm Ip Holdings B.V. Photoactive devices and materials
US9786492B2 (en) 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
US9786491B2 (en) 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
KR102378021B1 (ko) 2016-05-06 2022-03-23 에이에스엠 아이피 홀딩 비.브이. SiOC 박막의 형성
US10229833B2 (en) * 2016-11-01 2019-03-12 Asm Ip Holding B.V. Methods for forming a transition metal nitride film on a substrate by atomic layer deposition and related semiconductor device structures
US10186420B2 (en) 2016-11-29 2019-01-22 Asm Ip Holding B.V. Formation of silicon-containing thin films
US10847529B2 (en) 2017-04-13 2020-11-24 Asm Ip Holding B.V. Substrate processing method and device manufactured by the same
US10504901B2 (en) 2017-04-26 2019-12-10 Asm Ip Holding B.V. Substrate processing method and device manufactured using the same
JP7249952B2 (ja) 2017-05-05 2023-03-31 エーエスエム アイピー ホールディング ビー．ブイ． 酸素含有薄膜の制御された形成のためのプラズマ増強堆積プロセス
US10199267B2 (en) 2017-06-30 2019-02-05 Lam Research Corporation Tungsten nitride barrier layer deposition
TW201908511A (zh) * 2017-07-13 2019-03-01 美商應用材料股份有限公司 用於沉積鎢成核層的方法及設備
SG11202001268TA (en) 2017-08-14 2020-03-30 Lam Res Corp Metal fill process for three-dimensional vertical nand wordline
CN111066124A (zh) * 2017-09-25 2020-04-24 株式会社国际电气 半导体装置的制造方法、基板处理装置及程序
TWI761636B (zh) 2017-12-04 2022-04-21 荷蘭商Ａｓｍ Ｉｐ控股公司 電漿增強型原子層沉積製程及沉積碳氧化矽薄膜的方法
KR20200140391A (ko) 2018-05-03 2020-12-15 램 리써치 코포레이션 3d nand 구조체들에 텅스텐 및 다른 금속들을 증착하는 방법
CN112514052A (zh) 2018-07-31 2021-03-16 朗姆研究公司 多层特征填充
CN113424300A (zh) 2018-12-14 2021-09-21 朗姆研究公司 在3d nand结构上的原子层沉积
KR20210141762A (ko) 2019-04-11 2021-11-23 램 리써치 코포레이션 고 단차 커버리지 (step coverage) 텅스텐 증착
KR20220047333A (ko) 2019-08-12 2022-04-15 램 리써치 코포레이션 텅스텐 증착
KR20220035837A (ko) 2020-09-14 2022-03-22 에이에스엠 아이피 홀딩 비.브이. 상향식 금속 나이트라이드 형성
CN115584487B (zh) * 2022-10-18 2024-07-19 合肥安德科铭半导体科技有限公司 一种双(烷基亚胺基)双(烷基胺基)钨(vi)的制备方法及应用

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE393967B (sv) 1974-11-29 1977-05-31 Sateko Oy Forfarande och for utforande av stroleggning mellan lagren i ett virkespaket
US5342652A (en) 1992-06-15 1994-08-30 Materials Research Corporation Method of nucleating tungsten on titanium nitride by CVD without silane
FI97731C (fi) 1994-11-28 1997-02-10 Mikrokemia Oy Menetelmä ja laite ohutkalvojen valmistamiseksi
ATE193335T1 (de) 1994-11-30 2000-06-15 Micron Technology Inc Verfahren zum auftragen von wolframnitrid unter verwendung eines silicium enthaltenden gases
JPH08264530A (ja) 1995-03-20 1996-10-11 Fujitsu Ltd 半導体装置の製造方法及び半導体装置の製造装置
KR0155918B1 (ko) 1995-11-03 1998-12-01 김광호 선택적 텅스텐질화박막을 이용한 반도체장치의 캐패시터 형성방법
US6509098B1 (en) * 1995-11-17 2003-01-21 Massachusetts Institute Of Technology Poly(ethylene oxide) coated surfaces
US6342277B1 (en) * 1996-08-16 2002-01-29 Licensee For Microelectronics: Asm America, Inc. Sequential chemical vapor deposition
US5916365A (en) * 1996-08-16 1999-06-29 Sherman; Arthur Sequential chemical vapor deposition
US5913145A (en) 1997-08-28 1999-06-15 Texas Instruments Incorporated Method for fabricating thermally stable contacts with a diffusion barrier formed at high temperatures
US6197683B1 (en) * 1997-09-29 2001-03-06 Samsung Electronics Co., Ltd. Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact of semiconductor device using the same
US6576053B1 (en) * 1999-10-06 2003-06-10 Samsung Electronics Co., Ltd. Method of forming thin film using atomic layer deposition method
US6727169B1 (en) * 1999-10-15 2004-04-27 Asm International, N.V. Method of making conformal lining layers for damascene metallization

Also Published As

Publication number Publication date
EP1242647B1 (fr) 2003-08-13
DE60004566D1 (de) 2003-09-18
TW541351B (en) 2003-07-11
WO2001027347A1 (fr) 2001-04-19
JP4713041B2 (ja) 2011-06-29
KR100744219B1 (ko) 2007-08-01
DE60004566T2 (de) 2004-06-24
US6863727B1 (en) 2005-03-08
JP2003511561A (ja) 2003-03-25
EP1242647A1 (fr) 2002-09-25
FI19992234A (fi) 2001-04-16
KR20020040877A (ko) 2002-05-30
AU7926800A (en) 2001-04-23

Similar Documents

Publication Publication Date Title
FI117944B (fi) Menetelmä siirtymämetallinitridiohutkalvojen kasvattamiseksi
FI118158B (sv) Förfarande för modifiering av utgångsämneskemikalierna i en ALD-prosess
US7638170B2 (en) Low resistivity metal carbonitride thin film deposition by atomic layer deposition
US6482262B1 (en) Deposition of transition metal carbides
US11560625B2 (en) Vapor deposition of molybdenum using a bis(alkyl-arene) molybdenum precursor
US9677175B2 (en) ALD of metal-containing films using cyclopentadienyl compounds
FI119941B (fi) Menetelmä nanolaminaattien valmistamiseksi
US20100104755A1 (en) Deposition method of ternary films
WO2001029280A1 (fr) Depot de carbures de metal de transition
WO2020076502A1 (fr) Procédés de dépôt de films de tungstène ou de molybdène
US20200199743A1 (en) Methods for depositing a tungsten or molybdenum layer in the presence of a reducing co-reactant
Elers et al. Atomic layer deposition of WxN/TiN and WNxCy/TiN nanolaminates
WO2021257396A1 (fr) Procédé de nucléation de films de nitrure conducteurs
US20210123136A1 (en) Methods To Grow Low Resistivity Metal Containing Films
FI117943B (fi) Menetelmä alkuaineohutkalvojen kasvattamiseksi
US20230307239A1 (en) Vapor deposition processes, reactants and deposition assemblies
EP4430226A1 (fr) Composés précurseurs de molybdène

Legal Events

Date Code Title Description
FG Patent granted

Ref document number: 117944

Country of ref document: FI