KR20020040877A - 전이 금속 질화물 박막의 증착 방법 - Google Patents
전이 금속 질화물 박막의 증착 방법 Download PDFInfo
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Abstract
Description
Claims (21)
- - 금속 소오스 재료,- 상기 금속 소오스 재료를 환원시킬 수 있는 환원제, 및- 상기 환원된 금속 소오스 재료와 반응할 수 있는 질소 소오스 재료의 증기상 펄스가 선택적으로 그리고 교대로 반응 공간으로 공급되어 기판과 접촉하는 원자 층 증착 공정에 의한 기판 상에 금속 질화물 박막의 형성 방법에 있어서,환원제로서 상기 금속 소오스 재료와 반응할 때 가스상 반응 부산물을 형성할 수 있는 붕소 화합물을 사용하는 단계를 포함하는 것을 특징으로 하는 금속 질화물 박막의 형성 방법.
- 제 1 항에 있어서,상기 환원제가 표면에 있는 상기 금속 소오스 재료와 반응할 때 가스상의 반응 부산물을 형성할 수 있는 금속 질화물 박막의 형성 방법.
- 제 1 항 또는 제 2 항에 있어서,상기 펄스 사이클이 필수적으로,- 증기상의 금속 소오스 화학물 펄스를 불활성 캐리어 가스에 의해 상기 반응 공간 내에 공급하는 단계,- 상기 반응 공간을 불활성 가스로 세정하는 단계,- 증기상의 붕소 소오스 화학물 펄스를 불활성 캐리어 가스에 의해 상기 반응 공간 내로 공급하는 단계,- 상기 반응 공간을 불활성 가스로 세정하는 단계,- 증기상의 질소 소오스 화학물 펄스를 상기 반응 공간 내로 공급하는 단계, 및- 상기 반응 공간을 불활성 가스로 세정하는 단계를 포함하는 금속 질화물 박막의 형성 방법.
- 제 1 항 내지 제 3 항 중 어느 한 항에 있어서,상기 금속 소오스 재료의 금속이 W, Mo, Cr, Ta, Nb, V, Hf, Zr, 및 Ti를 포함하는 군으로부터 선택되는 금속 질화물 박막의 형성 방법.
- 제 4 항에 있어서,상기 금속 소오스 재료의 금속 화합물이 할로겐화물, 바람직하게 불화물, 염화물, 브롬화물 또는 요오드화물과 금속 유기 화합물, 바람직하게 알킬아미노, 시클로펜타디에닐, 디티오카르바메이트 또는 베타디케토네이트를 포함하는 군으로부터 선택되는 금속 질화물 박막의 형성 방법.
- 제 4 항 또는 제 5 항에 있어서,상기 금속 소오스 재료가,- 텅스텐 할로겐화물, 바람직하게 WFx, WCly, WBrm또는 WIn, 여기서 x, y, m 및 n은 1에서 6까지의 정수이며 특히 WF6,- 텅스텐 카르보닐, 바람직하게 텅스텐 헥사카르보닐 W(CO)6또는 트리카르보닐(메시틸렌)텅스텐,- 비스(시클로펜타디에닐) 텅스텐 디하이드라이드, 비스(시클로펜타디에닐)텅스텐 디클로라이드 또는 비스(시클로펜타디에닐)디텅스텐 헥사카르보닐과 같은 텅스텐 시클로펜타디에닐, 및- 텅스텐 β-디케토네이트를 포함하는 군으로부터 선택된 텅스텐 화합물인 금속 질화물 박막의 형성 방법.
- 제 1 항 내지 제 6 항 중 어느 한 항에 있어서,상기 붕소 화합물은 화학식(Ⅰ) BnHn+x인 보란과 화학식(Ⅱ) BnMm, 및 그 착물을 포함하는 군으로부터 선택되며,화학식(Ⅰ)에서, n은 1에서 10까지, 바람직하게 2에서 6까지의 정수이고, x는 짝수, 바람직하게 4, 6 또는 8이며,화학식(Ⅱ)에서, n은 1에서 10까지, 바람직하게 2에서 6까지의 정수이고, m은 n과 상이하며 1에서 10까지, 바람직하게 2에서 6까지의 정수인 금속 질화물 박막의 형성 방법.
- 제 7 항에 있어서,상기 보란은 화학식 BnHn+4의 니도-보란, 화학식 BnHn+6의 아라크노-보란, 화학식 BnHn+8의 하이포-보란 및 컨정크토-보란 BnHm을 포함하는 군으로부터 선택되며, n 및 m은 청구항 6과 동일한 금속 질화물 박막의 형성 방법.
- 제 1 항 내지 제 6 항 중 어느 한 항에 있어서,상기 붕소 화합물은 화학식(Ⅳ) C2BnHn+x에 따른 카르보란을 포함하는 군으로부터 선택되며, n은 1에서 10까지, 바람직하게 2에서 6까지의 정수이며, x는 짝수, 바람직하게 2, 4 또는 6인 금속 질화물 박막의 형성 방법.
- 제 9 항에 있어서,상기 카르보란은 클로조-카르보란(C2BnHn+2), 니도-카르보란(C2BnHn+4) 및 아라크노-카르보란(C2BnHn+6)을 포함하는 군으로부터 선택되며, n은 청구항 8과 동일한 금속 질화물 박막의 형성 방법.
- 제 1 항 내지 제 6 항 중 어느 한 항에 있어서,상기 붕소 화합물은 화학식(Ⅴ) R3NBX3에 따른 아민 보란 첨가물을 포함하는 군으로부터 선택되며, R은 선형 또는 가지형 C1-C10, 바람직하게 C1-C4알킬 또는 H이고, X는 선형 또는 가지형 C1-C10, 바람직하게 C1-C4알킬, H 또는 할로겐인 금속 질화물 박막의 형성 방법.
- 제 1 항 내지 제 6 항 중 어느 한 항에 있어서,상기 붕소 화합물은 B에 대한 하나 이상의 대체물이 화학식(Ⅵ) R2N에 따른 아미노기인 아미노보란을 포함하는 군으로부터 선택되며, R은 선형 또는 가지형 C1-C10, 바람직하게 C1-C4알킬 또는 대체된 또는 대체되지 않은 아릴기인 금속 질화물 박막의 형성 방법.
- 제 1 항 내지 제 6 항 중 어느 한 항에 있어서,상기 붕소 화합물은 알킬 붕소 및 알킬 보란을 포함하는 군으로부터 선택되며, 상기 알킬은 선형 또는 가지형 C1-C10알킬, 바람직하게 C2-C4알킬인 금속 질화물 박막의 형성 방법.
- 제 1 항 내지 제 6 항 중 어느 한 항에 있어서,상기 붕소 화합물은 높은 붕소/할로겐화물 비를 갖는 붕소 할로겐화물, 바람직하게 B2F4, B2Cl4및 B2Br4를 포함하는 군으로부터 선택되는 금속 질화물 박막의 형성 방법.
- 제 1 항 내지 제 6 항 중 어느 한 항에 있어서,상기 붕소 화합물은 화학식(Ⅲ) BnXn의 할로겐보란을 포함하는 군으로부터 선택되며, X는 Cl 또는 Br이며 X가 Cl일 때 n은 4, 8 내지 12이며, X가 Br일 때 n은 7 내지 10인 금속 질화물 박막의 형성 방법.
- 제 1 항 내지 제 6 항 중 어느 한 항에 있어서,상기 붕소 화합물은 시클릭 보라진(-BH-NH-)3과 그 휘발성 유도체를 포함하는 군으로부터 선택되는 금속 질화물 박막의 형성 방법.
- 제 1 항 내지 제 6 항 중 어느 한 항에 있어서,상기 붕소 화합물은 보란 할로겐화물 및 그 착물을 포함하는 군으로부터 선택되는 금속 질화물 박막의 형성 방법.
- 제 1 항 내지 제 17 항 중 어느 한 항에 있어서,상기 질소 소오스 재료는,- 암모니아(NH3) 및 그 염, 바람직하게 할로겐화물염, 특히 플루오르화암모늄 또는 염화암모늄,- 아지드화수소(HN3) 및 상기 아지드화수소의 알킬 유도체, 바람직하게CH3N3,- 히드라진(N2H4) 및 히드라진 염화수소와 같은 히드라진의 염,- 히드라진의 알킬 유도체, 바람직하게 디메틸 히드라진,- 플루오르화질소(NF3),- 히드록실 아민(NH2OH) 및 그 염, 바람직하게 히드록실아민 염화수소,- 1차, 2차 및 3차 아민, 바람직하게 메틸 아민, 디에틸아민 및 트리에틸아민, 및- NH2 *, NH**, N***과 같은 질소 라디칼(여기서 *는 결합 가능한 자유 전자, 및 여기된 질소의 상태(N2 *)를 의미함)을 포함하는 군으로부터 선택된 금속 질화물 박막의 형성 방법.
- 제 1 항 내지 제 18 항 중 어느 한 항에 있어서,상기 기판은 규소, 이산화탄소, 고팅된 규소, 구리 금속, 및 질화물을 포함하는 군으로부터 선택되는 금속 질화물 박막의 형성 방법.
- 제 1 항 내지 제 19 항 중 어느 한 항에 따른 방법에 의해 집적 회로의 제조 중에 금속 질화물 박막을 상기 집적 회로의 유전체 표면 또는 금속 표면 상에 증착시키는 단계를 포함하는 집적 회로 내에 확산 배리어를 제공하는 방법.
- ALD 공정에 의해 전이 금속 질화물 박막을 성장시키는 환원제로서 제 7 항 내지 제 17 항 중 어느 한 항에 따른 붕소 화합물의 용도.
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- 2000-10-13 US US10/110,730 patent/US6863727B1/en not_active Expired - Lifetime
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KR100594626B1 (ko) * | 2004-09-02 | 2006-07-07 | 한양대학교 산학협력단 | 원자층 증착법을 이용한 질화막의 형성 방법 |
KR101506019B1 (ko) * | 2006-11-01 | 2015-03-25 | 에이에스엠 아메리카, 인코포레이티드 | 금속 카바이드 막의 기상 증착 |
KR20140014020A (ko) * | 2012-07-26 | 2014-02-05 | 노벨러스 시스템즈, 인코포레이티드 | 삼성분 텅스텐 붕소화 질화물 필름 및 형성 방법 |
KR101476550B1 (ko) * | 2012-08-23 | 2014-12-24 | 가부시키가이샤 히다치 고쿠사이 덴키 | 반도체 장치의 제조 방법, 기판 처리 장치 및 기록 매체 |
US11348795B2 (en) | 2017-08-14 | 2022-05-31 | Lam Research Corporation | Metal fill process for three-dimensional vertical NAND wordline |
US11549175B2 (en) | 2018-05-03 | 2023-01-10 | Lam Research Corporation | Method of depositing tungsten and other metals in 3D NAND structures |
US11972952B2 (en) | 2019-12-13 | 2024-04-30 | Lam Research Corporation | Atomic layer deposition on 3D NAND structures |
Also Published As
Publication number | Publication date |
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DE60004566T2 (de) | 2004-06-24 |
TW541351B (en) | 2003-07-11 |
FI19992234A (fi) | 2001-04-16 |
AU7926800A (en) | 2001-04-23 |
JP2003511561A (ja) | 2003-03-25 |
EP1242647B1 (en) | 2003-08-13 |
KR100744219B1 (ko) | 2007-08-01 |
JP4713041B2 (ja) | 2011-06-29 |
EP1242647A1 (en) | 2002-09-25 |
DE60004566D1 (de) | 2003-09-18 |
US6863727B1 (en) | 2005-03-08 |
FI117944B (fi) | 2007-04-30 |
WO2001027347A1 (en) | 2001-04-19 |
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