ES448032A1 - Metodo de fabricar pilas solares. - Google Patents
Metodo de fabricar pilas solares.Info
- Publication number
- ES448032A1 ES448032A1 ES448032A ES448032A ES448032A1 ES 448032 A1 ES448032 A1 ES 448032A1 ES 448032 A ES448032 A ES 448032A ES 448032 A ES448032 A ES 448032A ES 448032 A1 ES448032 A1 ES 448032A1
- Authority
- ES
- Spain
- Prior art keywords
- polycrystalline silicon
- solar cells
- junction
- substrates
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 238000000151 deposition Methods 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910000831 Steel Inorganic materials 0.000 abstract 1
- 230000004888 barrier function Effects 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 229910002804 graphite Inorganic materials 0.000 abstract 1
- 239000010439 graphite Substances 0.000 abstract 1
- 230000008018 melting Effects 0.000 abstract 1
- 238000002844 melting Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 239000010959 steel Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/24—Deposition of silicon only
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
- H10F77/164—Polycrystalline semiconductors
- H10F77/1642—Polycrystalline semiconductors including only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
- H10F77/1692—Thin semiconductor films on metallic or insulating substrates the films including only Group IV materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/913—Graphoepitaxy or surface modification to enhance epitaxy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/12—Photocathodes-Cs coated and solar cell
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/122—Polycrystalline
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/15—Silicon on sapphire SOS
Landscapes
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photovoltaic Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/576,488 US3961997A (en) | 1975-05-12 | 1975-05-12 | Fabrication of polycrystalline solar cells on low-cost substrates |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| ES448032A1 true ES448032A1 (es) | 1977-11-01 |
Family
ID=24304624
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| ES448032A Expired ES448032A1 (es) | 1975-05-12 | 1976-05-11 | Metodo de fabricar pilas solares. |
Country Status (8)
| Country | Link |
|---|---|
| US (2) | US3961997A (enExample) |
| JP (1) | JPS5231692A (enExample) |
| CA (1) | CA1068805A (enExample) |
| DE (1) | DE2620832A1 (enExample) |
| ES (1) | ES448032A1 (enExample) |
| FR (1) | FR2311409A1 (enExample) |
| GB (1) | GB1547626A (enExample) |
| NL (1) | NL7605065A (enExample) |
Families Citing this family (114)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4119744A (en) * | 1975-02-07 | 1978-10-10 | U.S. Philips Corporation | Method of manufacturing semiconductor devices in which a layer of semiconductor material is provided on a substrate |
| JPS51128268A (en) * | 1975-04-30 | 1976-11-09 | Sony Corp | Semiconductor unit |
| US4142195A (en) * | 1976-03-22 | 1979-02-27 | Rca Corporation | Schottky barrier semiconductor device and method of making same |
| DE2638269C2 (de) * | 1976-08-25 | 1983-05-26 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zur Herstellung von substratgebundenem, großflächigem Silicium |
| US4196438A (en) * | 1976-09-29 | 1980-04-01 | Rca Corporation | Article and device having an amorphous silicon containing a halogen and method of fabrication |
| US4094751A (en) * | 1976-09-30 | 1978-06-13 | Allied Chemical Corporation | Photochemical diodes |
| US4127424A (en) * | 1976-12-06 | 1978-11-28 | Ses, Incorporated | Photovoltaic cell array |
| US4129463A (en) * | 1977-06-29 | 1978-12-12 | The United States Of America As Represented By The United States Department Of Energy | Polycrystalline silicon semiconducting material by nuclear transmutation doping |
| FR2401696A1 (fr) * | 1977-08-31 | 1979-03-30 | Ugine Kuhlmann | Methode de depot de silicium cristallin en films minces sur substrats graphites |
| US4124410A (en) * | 1977-11-21 | 1978-11-07 | Union Carbide Corporation | Silicon solar cells with low-cost substrates |
| JPS5481091A (en) * | 1977-12-12 | 1979-06-28 | Agency Of Ind Science & Technol | Plate-type silicon semiconductor and its manufacture |
| US4341610A (en) * | 1978-06-22 | 1982-07-27 | Schumacher John C | Energy efficient process for continuous production of thin semiconductor films on metallic substrates |
| US4525223A (en) * | 1978-09-19 | 1985-06-25 | Noboru Tsuya | Method of manufacturing a thin ribbon wafer of semiconductor material |
| US4330582A (en) * | 1978-11-13 | 1982-05-18 | Semix Incorporated | Semicrystalline silicon products |
| US4343963A (en) * | 1979-03-02 | 1982-08-10 | Westinghouse Electric Corp. | Substrate for silicon solar cells |
| US4402771A (en) * | 1979-03-02 | 1983-09-06 | Westinghouse Electric Corp. | Substrate for silicon solar cells |
| US4213801A (en) * | 1979-03-26 | 1980-07-22 | Bell Telephone Laboratories, Incorporated | Ohmic contact of N-GaAs to electrical conductive substrates by controlled growth of N-GaAs polycrystalline layers |
| FR2455362A1 (fr) * | 1979-04-23 | 1980-11-21 | Labo Electronique Physique | Procede de realisation de cellules solaires, a base de silicium polycristallin depose sur du carbone, et cellules solaires ainsi obtenues |
| US4332838A (en) * | 1980-09-24 | 1982-06-01 | Wegrzyn James E | Particulate thin film fabrication process |
| US4571448A (en) * | 1981-11-16 | 1986-02-18 | University Of Delaware | Thin film photovoltaic solar cell and method of making the same |
| US4778478A (en) * | 1981-11-16 | 1988-10-18 | University Of Delaware | Method of making thin film photovoltaic solar cell |
| US4482913A (en) * | 1982-02-24 | 1984-11-13 | Westinghouse Electric Corp. | Semiconductor device soldered to a graphite substrate |
| US4507674A (en) * | 1982-06-07 | 1985-03-26 | Hughes Aircraft Company | Backside illuminated blocked impurity band infrared detector |
| US4450208A (en) * | 1982-09-30 | 1984-05-22 | Allegheny Ludlum Steel Corporation | Composite article for a semiconductor device |
| US4503089A (en) * | 1982-09-30 | 1985-03-05 | Allegheny Ludlum Steel Corporation | Method for producing semiconductor devices |
| JPS6024641A (ja) * | 1983-07-20 | 1985-02-07 | Nec Corp | マイクロプログラム制御方式 |
| DE8232492U1 (de) * | 1982-11-19 | 1986-03-27 | Siemens AG, 1000 Berlin und 8000 München | Solarzelle aus amorphem Silizium |
| DE3429899A1 (de) * | 1983-08-16 | 1985-03-07 | Canon K.K., Tokio/Tokyo | Verfahren zur bildung eines abscheidungsfilms |
| JPH0652795B2 (ja) * | 1984-03-07 | 1994-07-06 | 太陽誘電株式会社 | 可撓性非晶質半導体太陽電池 |
| US4639277A (en) * | 1984-07-02 | 1987-01-27 | Eastman Kodak Company | Semiconductor material on a substrate, said substrate comprising, in order, a layer of organic polymer, a layer of metal or metal alloy and a layer of dielectric material |
| US4759947A (en) * | 1984-10-08 | 1988-07-26 | Canon Kabushiki Kaisha | Method for forming deposition film using Si compound and active species from carbon and halogen compound |
| US4726963A (en) * | 1985-02-19 | 1988-02-23 | Canon Kabushiki Kaisha | Process for forming deposited film |
| US5244698A (en) * | 1985-02-21 | 1993-09-14 | Canon Kabushiki Kaisha | Process for forming deposited film |
| US4818563A (en) * | 1985-02-21 | 1989-04-04 | Canon Kabushiki Kaisha | Process for forming deposited film |
| US4853251A (en) * | 1985-02-22 | 1989-08-01 | Canon Kabushiki Kaisha | Process for forming deposited film including carbon as a constituent element |
| US4801468A (en) * | 1985-02-25 | 1989-01-31 | Canon Kabushiki Kaisha | Process for forming deposited film |
| JP2537175B2 (ja) * | 1985-03-27 | 1996-09-25 | キヤノン株式会社 | 機能性堆積膜の製造装置 |
| US4772564A (en) * | 1985-10-30 | 1988-09-20 | Astrosystems, Inc. | Fault tolerant thin-film photovoltaic cell fabrication process |
| US4781766A (en) * | 1985-10-30 | 1988-11-01 | Astrosystems, Inc. | Fault tolerant thin-film photovoltaic cell and method |
| US4677250A (en) * | 1985-10-30 | 1987-06-30 | Astrosystems, Inc. | Fault tolerant thin-film photovoltaic cell |
| JPH0647727B2 (ja) * | 1985-12-24 | 1994-06-22 | キヤノン株式会社 | 堆積膜形成法 |
| JPH084071B2 (ja) * | 1985-12-28 | 1996-01-17 | キヤノン株式会社 | 堆積膜形成法 |
| JPH0639357B2 (ja) * | 1986-09-08 | 1994-05-25 | 新技術開発事業団 | 元素半導体単結晶薄膜の成長方法 |
| JPS63168056A (ja) * | 1986-12-29 | 1988-07-12 | Taiyo Yuden Co Ltd | 非晶質半導体太陽電池 |
| US4916091A (en) * | 1987-11-05 | 1990-04-10 | Texas Instruments Incorporated | Plasma and plasma UV deposition of SiO2 |
| DE3813737A1 (de) * | 1988-04-23 | 1989-11-02 | Fraunhofer Ges Forschung | Verfahren zum herstellen von solarzellen sowie spiegelofen zur durchfuehrung des verfahrens |
| US5459346A (en) * | 1988-06-28 | 1995-10-17 | Ricoh Co., Ltd. | Semiconductor substrate with electrical contact in groove |
| US5310446A (en) * | 1990-01-10 | 1994-05-10 | Ricoh Company, Ltd. | Method for producing semiconductor film |
| US5273911A (en) * | 1991-03-07 | 1993-12-28 | Mitsubishi Denki Kabushiki Kaisha | Method of producing a thin-film solar cell |
| DE4119531A1 (de) * | 1991-06-13 | 1992-12-17 | Wacker Chemitronic | Epitaxierte halbleiterscheiben mit sauerstoffarmer zone einstellbarer ausdehnung und verfahren zu ihrer herstellung |
| US5455430A (en) * | 1991-08-01 | 1995-10-03 | Sanyo Electric Co., Ltd. | Photovoltaic device having a semiconductor grade silicon layer formed on a metallurgical grade substrate |
| DE4133644A1 (de) * | 1991-10-11 | 1993-04-15 | Nukem Gmbh | Halbleiterbauelement, verfahren zu dessen herstellung sowie hierzu benutzte anordnung |
| JPH0690014A (ja) * | 1992-07-22 | 1994-03-29 | Mitsubishi Electric Corp | 薄型太陽電池及びその製造方法,エッチング方法及び自動エッチング装置,並びに半導体装置の製造方法 |
| DE4237017A1 (de) * | 1992-11-02 | 1994-05-05 | Mir Patent Lizenzverwertungen | Verfahren zur Herstellung eines Heizelements |
| US6649824B1 (en) * | 1999-09-22 | 2003-11-18 | Canon Kabushiki Kaisha | Photoelectric conversion device and method of production thereof |
| EP1468789A3 (en) * | 2003-04-17 | 2008-06-04 | BLACK & DECKER INC. | Clutch for rotary power tool and rotary power tool incorporating such clutch |
| US7709360B2 (en) * | 2004-06-07 | 2010-05-04 | Imec | Method for manufacturing a crystalline silicon layer |
| EP1605499A3 (en) * | 2004-06-07 | 2009-12-02 | Imec | Method for manufacturing a crystalline silicon layer |
| FR2878648B1 (fr) * | 2004-11-30 | 2007-02-02 | Commissariat Energie Atomique | Support semi-conducteur rectangulaire pour la microelectronique et procede de realisation d'un tel support |
| US7468485B1 (en) * | 2005-08-11 | 2008-12-23 | Sunpower Corporation | Back side contact solar cell with doped polysilicon regions |
| US8314327B2 (en) * | 2005-11-06 | 2012-11-20 | Banpil Photonics, Inc. | Photovoltaic cells based on nano or micro-scale structures |
| DE202005019945U1 (de) * | 2005-12-17 | 2006-03-23 | Solarwatt Ag | Kristallines photovoltaisches Solarmodul |
| US8624108B1 (en) * | 2006-11-01 | 2014-01-07 | Banpil Photonics, Inc. | Photovoltaic cells based on nano or micro-scale structures |
| US8053038B2 (en) * | 2007-09-18 | 2011-11-08 | Atomic Energy Council-Institute Of Nuclear Energy Research | Method for making titanium-based compound film of poly silicon solar cell |
| US7851249B2 (en) * | 2007-10-31 | 2010-12-14 | Atomic Energy Council - Institute Of Nuclear Energy Research | Tandem solar cell including an amorphous silicon carbide layer and a multi-crystalline silicon layer |
| US7956283B2 (en) * | 2007-11-09 | 2011-06-07 | Sunpreme, Ltd. | Low-cost solar cells and methods for their production |
| US8198528B2 (en) * | 2007-12-14 | 2012-06-12 | Sunpower Corporation | Anti-reflective coating with high optical absorption layer for backside contact solar cells |
| US7863080B1 (en) * | 2008-01-07 | 2011-01-04 | Atomic Energy Council-Institute Of Nuclear Energy | Process for making multi-crystalline silicon thin-film solar cells |
| US8222516B2 (en) * | 2008-02-20 | 2012-07-17 | Sunpower Corporation | Front contact solar cell with formed emitter |
| JP5386747B2 (ja) * | 2008-02-21 | 2014-01-15 | 公益財団法人神奈川科学技術アカデミー | 半導体基板、半導体素子、発光素子及び電子素子 |
| US7851698B2 (en) * | 2008-06-12 | 2010-12-14 | Sunpower Corporation | Trench process and structure for backside contact solar cells with polysilicon doped regions |
| US8207444B2 (en) * | 2008-07-01 | 2012-06-26 | Sunpower Corporation | Front contact solar cell with formed electrically conducting layers on the front side and backside |
| US7951640B2 (en) * | 2008-11-07 | 2011-05-31 | Sunpreme, Ltd. | Low-cost multi-junction solar cells and methods for their production |
| US8796066B2 (en) * | 2008-11-07 | 2014-08-05 | Sunpreme, Inc. | Low-cost solar cells and methods for fabricating low cost substrates for solar cells |
| US8242354B2 (en) * | 2008-12-04 | 2012-08-14 | Sunpower Corporation | Backside contact solar cell with formed polysilicon doped regions |
| US8409911B2 (en) * | 2009-02-24 | 2013-04-02 | Sunpower Corporation | Methods for metallization of solar cells |
| US9070804B2 (en) * | 2009-02-24 | 2015-06-30 | Sunpower Corporation | Back contact sliver cells |
| US8253058B2 (en) * | 2009-03-19 | 2012-08-28 | Integrated Photovoltaics, Incorporated | Hybrid nozzle for plasma spraying silicon |
| US8283559B2 (en) * | 2009-04-09 | 2012-10-09 | Silevo, Inc. | Silicon-based dielectric stack passivation of Si-epitaxial thin-film solar cells |
| TWI379430B (en) * | 2009-04-16 | 2012-12-11 | Atomic Energy Council | A method of fabricating a thin interface for internal light reflection and impurities isolation |
| US20110017299A1 (en) * | 2009-07-27 | 2011-01-27 | Mccormack Jr Joe Thornton | Solar Sheath |
| US8476660B2 (en) * | 2009-08-20 | 2013-07-02 | Integrated Photovoltaics, Inc. | Photovoltaic cell on substrate |
| US8110419B2 (en) | 2009-08-20 | 2012-02-07 | Integrated Photovoltaic, Inc. | Process of manufacturing photovoltaic device |
| US20110048505A1 (en) * | 2009-08-27 | 2011-03-03 | Gabriela Bunea | Module Level Solution to Solar Cell Polarization Using an Encapsulant with Opened UV Transmission Curve |
| US9012766B2 (en) * | 2009-11-12 | 2015-04-21 | Silevo, Inc. | Aluminum grid as backside conductor on epitaxial silicon thin film solar cells |
| US9214576B2 (en) | 2010-06-09 | 2015-12-15 | Solarcity Corporation | Transparent conducting oxide for photovoltaic devices |
| US8377738B2 (en) | 2010-07-01 | 2013-02-19 | Sunpower Corporation | Fabrication of solar cells with counter doping prevention |
| US9773928B2 (en) | 2010-09-10 | 2017-09-26 | Tesla, Inc. | Solar cell with electroplated metal grid |
| JP5762545B2 (ja) * | 2010-09-28 | 2015-08-12 | エンパイア テクノロジー ディベロップメント エルエルシー | 配向再結晶化するグラフェン成長基質 |
| US9800053B2 (en) | 2010-10-08 | 2017-10-24 | Tesla, Inc. | Solar panels with integrated cell-level MPPT devices |
| FR2971086B1 (fr) | 2011-01-31 | 2014-04-18 | Inst Polytechnique Grenoble | Structure adaptee a la formation de cellules solaires |
| US9054256B2 (en) | 2011-06-02 | 2015-06-09 | Solarcity Corporation | Tunneling-junction solar cell with copper grid for concentrated photovoltaic application |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL66954C (enExample) * | 1946-03-20 | |||
| US2763581A (en) * | 1952-11-25 | 1956-09-18 | Raytheon Mfg Co | Process of making p-n junction crystals |
| US2840489A (en) * | 1956-01-17 | 1958-06-24 | Owens Illinois Glass Co | Process for the controlled deposition of silicon dihalide vapors onto selected surfaces |
| FR1141561A (fr) * | 1956-01-20 | 1957-09-04 | Cedel | Procédé et moyens pour la fabrication de matériaux semi-conducteurs |
| US3011877A (en) * | 1956-06-25 | 1961-12-05 | Siemens Ag | Production of high-purity semiconductor materials for electrical purposes |
| US2992903A (en) * | 1957-10-30 | 1961-07-18 | Imber Oscar | Apparatus for growing thin crystals |
| US3078328A (en) * | 1959-11-12 | 1963-02-19 | Texas Instruments Inc | Solar cell |
| US3335038A (en) * | 1964-03-30 | 1967-08-08 | Ibm | Methods of producing single crystals on polycrystalline substrates and devices using same |
| US3511702A (en) * | 1965-08-20 | 1970-05-12 | Motorola Inc | Epitaxial growth process from an atmosphere composed of a hydrogen halide,semiconductor halide and hydrogen |
| US3460240A (en) * | 1965-08-24 | 1969-08-12 | Westinghouse Electric Corp | Manufacture of semiconductor solar cells |
| US3449705A (en) * | 1966-04-21 | 1969-06-10 | Ncr Co | Photoconductive matrix sheet |
| US3411050A (en) * | 1966-04-28 | 1968-11-12 | Air Force Usa | Flexible storable solar cell array |
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| US3914856A (en) * | 1972-06-05 | 1975-10-28 | Fang Pao Hsien | Economical solar cell for producing electricity |
| US3925577A (en) * | 1972-11-24 | 1975-12-09 | Westinghouse Electric Corp | Silicon carbide coated graphite members and process for producing the same |
| US3900943A (en) * | 1973-06-07 | 1975-08-26 | Dow Corning | Silicon semiconductor device array and method of making same |
| NL7311470A (nl) * | 1973-08-21 | 1975-02-25 | Philips Nv | Werkwijze voor het neerslaan van een epitaxiale |
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-
1975
- 1975-05-12 US US05/576,488 patent/US3961997A/en not_active Expired - Lifetime
-
1976
- 1976-05-05 CA CA251,831A patent/CA1068805A/en not_active Expired
- 1976-05-11 DE DE19762620832 patent/DE2620832A1/de not_active Withdrawn
- 1976-05-11 ES ES448032A patent/ES448032A1/es not_active Expired
- 1976-05-12 GB GB19626/76A patent/GB1547626A/en not_active Expired
- 1976-05-12 NL NL7605065A patent/NL7605065A/xx not_active Application Discontinuation
- 1976-05-12 JP JP51054205A patent/JPS5231692A/ja active Pending
- 1976-05-12 FR FR7614263A patent/FR2311409A1/fr active Granted
- 1976-06-04 US US05/693,074 patent/US4077818A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| US4077818A (en) | 1978-03-07 |
| US3961997A (en) | 1976-06-08 |
| FR2311409A1 (fr) | 1976-12-10 |
| CA1068805A (en) | 1979-12-25 |
| DE2620832A1 (de) | 1976-11-25 |
| JPS5231692A (en) | 1977-03-10 |
| NL7605065A (nl) | 1976-11-16 |
| FR2311409B1 (enExample) | 1980-05-30 |
| GB1547626A (en) | 1979-06-27 |
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