ES2383588T3 - Operaciones de mantenimiento para celdas de almacenamiento de datos de múltiples niveles - Google Patents

Operaciones de mantenimiento para celdas de almacenamiento de datos de múltiples niveles Download PDF

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Publication number
ES2383588T3
ES2383588T3 ES10164179T ES10164179T ES2383588T3 ES 2383588 T3 ES2383588 T3 ES 2383588T3 ES 10164179 T ES10164179 T ES 10164179T ES 10164179 T ES10164179 T ES 10164179T ES 2383588 T3 ES2383588 T3 ES 2383588T3
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Spain
Prior art keywords
data
processor
resolution
page
implementations
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ES10164179T
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English (en)
Spanish (es)
Inventor
Michael J. Cornwell
Christopher P. Dudte
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Apple Inc
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Apple Inc
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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3431—Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/349—Arrangements for evaluating degradation, retention or wearout, e.g. by counting erase cycles
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5641—Multilevel memory having cells with different number of storage levels
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
  • Read Only Memory (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Investigating Or Analysing Biological Materials (AREA)
  • Compression, Expansion, Code Conversion, And Decoders (AREA)
ES10164179T 2006-05-15 2007-05-14 Operaciones de mantenimiento para celdas de almacenamiento de datos de múltiples niveles Active ES2383588T3 (es)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US80035706P 2006-05-15 2006-05-15
US800357P 2006-05-15
US11/694,739 US7639542B2 (en) 2006-05-15 2007-03-30 Maintenance operations for multi-level data storage cells
US694739 2007-03-30

Publications (1)

Publication Number Publication Date
ES2383588T3 true ES2383588T3 (es) 2012-06-22

Family

ID=38684942

Family Applications (2)

Application Number Title Priority Date Filing Date
ES11159445T Active ES2392334T3 (es) 2006-05-15 2007-05-14 Conversión analógica a digital de 8 bits o más para la determinación del valor de una célula de memoria NAND
ES10164179T Active ES2383588T3 (es) 2006-05-15 2007-05-14 Operaciones de mantenimiento para celdas de almacenamiento de datos de múltiples niveles

Family Applications Before (1)

Application Number Title Priority Date Filing Date
ES11159445T Active ES2392334T3 (es) 2006-05-15 2007-05-14 Conversión analógica a digital de 8 bits o más para la determinación del valor de una célula de memoria NAND

Country Status (9)

Country Link
US (3) US7639542B2 (enExample)
EP (10) EP2330597A1 (enExample)
JP (1) JP5358431B2 (enExample)
KR (16) KR101155751B1 (enExample)
CN (3) CN102768853B (enExample)
AT (2) ATE547794T1 (enExample)
DE (1) DE602007007938D1 (enExample)
ES (2) ES2392334T3 (enExample)
WO (1) WO2007134277A2 (enExample)

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