ES2146890T3 - Materiales de emision de electrones de campo, y dispositivos que usan tales materiales. - Google Patents
Materiales de emision de electrones de campo, y dispositivos que usan tales materiales.Info
- Publication number
- ES2146890T3 ES2146890T3 ES96925901T ES96925901T ES2146890T3 ES 2146890 T3 ES2146890 T3 ES 2146890T3 ES 96925901 T ES96925901 T ES 96925901T ES 96925901 T ES96925901 T ES 96925901T ES 2146890 T3 ES2146890 T3 ES 2146890T3
- Authority
- ES
- Spain
- Prior art keywords
- thickness
- materials
- particle
- substrate
- particles
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
- H01J1/02—Main electrodes
- H01J1/30—Cold cathodes, e.g. field-emissive cathode
- H01J1/304—Field-emissive cathodes
- H01J1/3042—Field-emissive cathodes microengineered, e.g. Spindt-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2201/00—Electrodes common to discharge tubes
- H01J2201/30—Cold cathodes
- H01J2201/319—Circuit elements associated with the emitters by direct integration
Landscapes
- Cathode-Ray Tubes And Fluorescent Screens For Display (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
UN MATERIAL DE EMISION DE ELECTRONES POR CAMPO COMPRENDE UN SUSTRATO ELECTRICAMENTE CONDUCTOR (13, 14) Y, COLOCADAS SOBRE EL MISMO, PARTICULAS ELECTRICAMENTE CONDUCTORAS (11) FORMADAS EN UNA CAPA DE MATERIAL INORGANICO ELECTRICAMENTE AISLANTE (12) O RECUBIERTAS CON DICHO MATERIAL (POR EJEMPLO, CRISTAL). SE DEFINE UN PRIMER ESPESOR DE MATERIAL AISLANTE (15 ) ENTRE CADA PARTICULA (11) Y EL SUSTRATO (13,14) Y UN SEGUNDO ESPESOR (15) DE MATERIAL AISLANTE ENTRE LA PARTICULA (11) Y EL ENTORNO EN EL CUAL ESTA DISPUESTO EL MATERIAL. LAS DIMENSIONES DE CADA PARTICULA (11) ENTRE LOS ESPESORES PRIMERO Y SEGUNDO (15) ES SIGNIFICATIVAMENTE MAYOR QUE CADA UNO DE LOS ESPESORES (15). AL APLICAR UN CAMPO ELECTRICO SUFICIENTE, CADA ESPESOR (15) PROPORCIONA UN CANAL CONDUCTOR PARA HACER QUE LAS PARTICULAS EMITAN ELECTRONES. MEDIANTE EL USO DE UN MATERIAL AISLANTE INORGANICO (12) SE HAN OBTENIDO CONDICIONES DE ESTABILIDAD Y RENDIMIENTO SORPRENDENTEMENTE BUENAS. LAS PARTICULAS (11) PUEDEN SER RELATIVAMENTE PEQUEÑAS, POR LO QUE EL MATERIAL EMISOR DE ELECTRONES (11, 12) SE PUEDE APLICAR AL SUSTRATO (13, 14) MEDIANTE VARIOS METODOS ECONOMICOS, INCLUIDA LA IMPRESION. EL MATERIAL SE PUEDE UTILIZAR EN DIVERSOS DISPOSITIVOS, INCLUIDOS LOS DE ILUMINACION Y VISUALIZACION.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GBGB9515988.5A GB9515988D0 (en) | 1995-08-04 | 1995-08-04 | Field electron emission materials and devices |
GBGB9606816.8A GB9606816D0 (en) | 1996-03-30 | 1996-03-30 | Field electron emission materials and devices |
Publications (1)
Publication Number | Publication Date |
---|---|
ES2146890T3 true ES2146890T3 (es) | 2000-08-16 |
Family
ID=26307517
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
ES96925901T Expired - Lifetime ES2146890T3 (es) | 1995-08-04 | 1996-08-02 | Materiales de emision de electrones de campo, y dispositivos que usan tales materiales. |
Country Status (11)
Country | Link |
---|---|
US (1) | US6097139A (es) |
EP (1) | EP0842526B1 (es) |
JP (1) | JPH11510307A (es) |
KR (1) | KR100405886B1 (es) |
CN (1) | CN1103110C (es) |
AU (1) | AU6626096A (es) |
CA (1) | CA2227322A1 (es) |
DE (1) | DE69607356T2 (es) |
ES (1) | ES2146890T3 (es) |
GB (1) | GB2304989B (es) |
WO (1) | WO1997006549A1 (es) |
Families Citing this family (69)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5854822A (en) * | 1997-07-25 | 1998-12-29 | Xrt Corp. | Miniature x-ray device having cold cathode |
AU8911898A (en) * | 1997-08-18 | 1999-03-08 | Xrt Corp. | Cathode from getter material |
GB2330687B (en) * | 1997-10-22 | 1999-09-29 | Printable Field Emitters Ltd | Field emission devices |
AU1493799A (en) * | 1997-12-04 | 1999-06-16 | Printable Field Emitters Limited | Field electron emission materials and devices |
DE69805333T2 (de) | 1997-12-15 | 2002-11-28 | Du Pont | Elektronenemitter aus ionenbeschossenem graphit |
US6409567B1 (en) | 1997-12-15 | 2002-06-25 | E.I. Du Pont De Nemours And Company | Past-deposited carbon electron emitters |
JPH11213866A (ja) | 1998-01-22 | 1999-08-06 | Sony Corp | 電子放出装置及びその製造方法並びにこれを用いた表示装置 |
WO1999040601A1 (fr) * | 1998-02-09 | 1999-08-12 | Matsushita Electric Industrial Co., Ltd. | Dispositif emetteur d'electrons, son procede de production, et son procede d'excitation; afficheur d'images comprenant ledit emetteur d'electrons et son procede de fabrication |
JP2000021568A (ja) * | 1998-06-30 | 2000-01-21 | Nippon Seiki Co Ltd | 有機エレクトロルミネセンスの駆動回路 |
GB9816684D0 (en) * | 1998-07-31 | 1998-09-30 | Printable Field Emitters Ltd | Field electron emission materials and devices |
AU5347899A (en) * | 1998-08-21 | 2000-03-14 | Xrt Corp. | Cathode structure with getter material and diamond film, and methods of manufacture thereof |
US6479939B1 (en) * | 1998-10-16 | 2002-11-12 | Si Diamond Technology, Inc. | Emitter material having a plurlarity of grains with interfaces in between |
US6292927B1 (en) * | 1998-12-07 | 2001-09-18 | Artisan Components, Inc. | Reduction of process antenna effects in integrated circuits |
KR100346540B1 (ko) * | 1999-03-22 | 2002-07-26 | 삼성에스디아이 주식회사 | 전계 방출 표시소자와 그의 제조방법 |
US6289079B1 (en) | 1999-03-23 | 2001-09-11 | Medtronic Ave, Inc. | X-ray device and deposition process for manufacture |
JP2000306492A (ja) * | 1999-04-21 | 2000-11-02 | Hitachi Powdered Metals Co Ltd | 電界放出型カソード、電子放出装置、および電子放出装置の製造方法 |
US6464625B2 (en) | 1999-06-23 | 2002-10-15 | Robert A. Ganz | Therapeutic method and apparatus for debilitating or killing microorganisms within the body |
GB9915633D0 (en) * | 1999-07-05 | 1999-09-01 | Printable Field Emitters Limit | Field electron emission materials and devices |
DE19936863A1 (de) * | 1999-08-05 | 2001-02-15 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Herstellungsverfahren für eine Gasentladungslampe |
US6342755B1 (en) * | 1999-08-11 | 2002-01-29 | Sony Corporation | Field emission cathodes having an emitting layer comprised of electron emitting particles and insulating particles |
GB9919737D0 (en) * | 1999-08-21 | 1999-10-20 | Printable Field Emitters Limit | Field emitters and devices |
TW494423B (en) * | 1999-10-12 | 2002-07-11 | Matsushita Electric Ind Co Ltd | Elecron-emitting element, electronic source using the element, field emission display device, fluorescent lamp, and method for producing those |
JP2001185019A (ja) | 1999-12-27 | 2001-07-06 | Hitachi Powdered Metals Co Ltd | 電界放出型カソード、電子放出装置、及び電子放出装置の製造方法 |
US6307327B1 (en) * | 2000-01-26 | 2001-10-23 | Motorola, Inc. | Method for controlling spacer visibility |
FR2804623B1 (fr) * | 2000-02-09 | 2002-05-03 | Univ Paris Curie | Procede de traitement d'une surface de diamant et surface de diamant correspondante |
GB0015928D0 (en) * | 2000-06-30 | 2000-08-23 | Printable Field Emitters Limit | Field emitters |
JP4312352B2 (ja) * | 2000-06-30 | 2009-08-12 | 隆 杉野 | 電子放出装置 |
US7315115B1 (en) * | 2000-10-27 | 2008-01-01 | Canon Kabushiki Kaisha | Light-emitting and electron-emitting devices having getter regions |
GB0106358D0 (en) * | 2001-03-13 | 2001-05-02 | Printable Field Emitters Ltd | Field emission materials and devices |
JP3833489B2 (ja) * | 2001-03-29 | 2006-10-11 | 株式会社東芝 | 冷陰極放電装置 |
KR100416141B1 (ko) * | 2001-06-22 | 2004-01-31 | 삼성에스디아이 주식회사 | 카본계 물질로 형성된 에미터를 갖는 전계 방출표시소자의 제조방법 |
FR2836279B1 (fr) * | 2002-02-19 | 2004-09-24 | Commissariat Energie Atomique | Structure de cathode pour ecran emissif |
GB2387021B (en) * | 2002-03-25 | 2004-10-27 | Printable Field Emitters Ltd | Field electron emission materials and devices |
JP3535871B2 (ja) | 2002-06-13 | 2004-06-07 | キヤノン株式会社 | 電子放出素子、電子源、画像表示装置及び電子放出素子の製造方法 |
AU2003259517A1 (en) * | 2002-10-07 | 2004-04-23 | Koninklijke Philips Electronics N.V. | Field emission device with self-aligned gate electrode structure, and method of manufacturing same |
US7447298B2 (en) * | 2003-04-01 | 2008-11-04 | Cabot Microelectronics Corporation | Decontamination and sterilization system using large area x-ray source |
TWI287940B (en) * | 2003-04-01 | 2007-10-01 | Cabot Microelectronics Corp | Electron source and method for making same |
US6998009B2 (en) * | 2003-06-10 | 2006-02-14 | Ut-Battelle, Llc | Filter and method of fabricating |
JP4154356B2 (ja) | 2003-06-11 | 2008-09-24 | キヤノン株式会社 | 電子放出素子、電子源、画像表示装置及びテレビ |
US7070634B1 (en) * | 2003-11-03 | 2006-07-04 | Wang Chi S | Plasma reformer for hydrogen production from water and fuel |
US20050255613A1 (en) * | 2004-05-13 | 2005-11-17 | Dojin Kim | Manufacturing of field emission display device using carbon nanotubes |
JP4667031B2 (ja) | 2004-12-10 | 2011-04-06 | キヤノン株式会社 | 電子放出素子の製造方法、および該製造方法を用いた、電子源並びに画像表示装置の製造方法 |
JP2006278318A (ja) * | 2005-03-25 | 2006-10-12 | Ngk Insulators Ltd | 光源 |
WO2007116524A1 (ja) | 2006-04-11 | 2007-10-18 | Norio Akamatsu | 電界放出発電装置 |
EP2009780A1 (en) | 2006-04-20 | 2008-12-31 | Norio Akamatsu | Linear acceleration generator |
US20090174283A1 (en) | 2006-05-19 | 2009-07-09 | Norio Akamatu | Field emission electricity generating apparatus |
JP2008078081A (ja) * | 2006-09-25 | 2008-04-03 | Toshiba Corp | 電界放出電子源及びその製造方法 |
TWI384899B (zh) * | 2006-12-20 | 2013-02-01 | Teco Elec & Machinery Co Ltd | Field structure of the field emission type display element |
US7827779B1 (en) | 2007-09-10 | 2010-11-09 | Alameda Applied Sciences Corp. | Liquid metal ion thruster array |
JP2009146639A (ja) * | 2007-12-12 | 2009-07-02 | Canon Inc | 電子放出素子、電子源、画像表示装置、および、電子放出素子の製造方法 |
CN101470131B (zh) * | 2007-12-28 | 2010-06-23 | 清华大学 | 基于碳纳米管场致发射的梳齿结构微机械加速度计 |
US20090221885A1 (en) * | 2008-02-25 | 2009-09-03 | Cardiac Pacemakers, Inc. | Optical Window Assembly for Implantable Medical Device |
US10199518B2 (en) | 2008-05-28 | 2019-02-05 | Solar-Tectic Llc | Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon |
US20090297774A1 (en) * | 2008-05-28 | 2009-12-03 | Praveen Chaudhari | Methods of growing heterepitaxial single crystal or large grained semiconductor films and devices thereon |
US8491718B2 (en) * | 2008-05-28 | 2013-07-23 | Karin Chaudhari | Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon |
JP2012090358A (ja) | 2008-06-16 | 2012-05-10 | Norio Akamatsu | 電界効果発電装置 |
US7783012B2 (en) * | 2008-09-15 | 2010-08-24 | General Electric Company | Apparatus for a surface graded x-ray tube insulator and method of assembling same |
WO2011079138A2 (en) | 2009-12-21 | 2011-06-30 | California Institute Of Technology | Microfluidic electrospray thruster |
CN103620726B (zh) * | 2011-07-04 | 2016-12-28 | 利乐拉瓦尔集团及财务有限公司 | 一种电子束装置、吸气器片和制造装配有所述吸气器片的电子束装置的方法 |
FR2986367B1 (fr) * | 2012-01-27 | 2014-03-28 | Univ Lyon 1 Claude Bernard | Source d'electrons a emission de champ |
US10384810B2 (en) | 2014-07-15 | 2019-08-20 | California Institute Of Technology | Micro-emitters for electrospray systems |
CN108968976B (zh) | 2017-05-31 | 2022-09-13 | 心脏起搏器股份公司 | 具有化学传感器的植入式医疗设备 |
CN109381195B (zh) | 2017-08-10 | 2023-01-10 | 心脏起搏器股份公司 | 包括电解质传感器融合的系统和方法 |
CN109419515B (zh) | 2017-08-23 | 2023-03-24 | 心脏起搏器股份公司 | 具有分级激活的可植入化学传感器 |
CN109864746B (zh) | 2017-12-01 | 2023-09-29 | 心脏起搏器股份公司 | 用于医学装置的多模式分析物传感器 |
CN109864747B (zh) | 2017-12-05 | 2023-08-25 | 心脏起搏器股份公司 | 多模式分析物传感器光电子接口 |
US10840163B2 (en) * | 2018-01-04 | 2020-11-17 | Mitsubishi Electric Research Laboratories, Inc. | Negative electroluminescent cooling device |
US10943760B2 (en) * | 2018-10-12 | 2021-03-09 | Kla Corporation | Electron gun and electron microscope |
CN110661170B (zh) * | 2019-08-13 | 2021-01-08 | 深圳市矽赫科技有限公司 | 一种用于制造半导体器件隔离结构的方法及其半导体器件 |
Family Cites Families (72)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3500101A (en) * | 1955-02-02 | 1970-03-10 | Sylvania Electric Prod | Photocapacitive electroluminescent light amplifier |
US3277313A (en) * | 1963-07-05 | 1966-10-04 | Burroughs Corp | Solid state quantum mechanical tunneling apparatus |
US3678325A (en) * | 1969-03-14 | 1972-07-18 | Matsushita Electric Ind Co Ltd | High-field emission cathodes and methods for preparing the cathodes |
DE2012192A1 (de) * | 1970-03-14 | 1971-10-07 | Philips Nv | Elektrische Entladungsrohre mit einer Kathode bestehend aus einer zwischen zwei leitenden Schichten hegenden Isolierschicht, und Verfahren zur Herstellung einer fur eine derartige Entladungsrohre bestimmte Kathode |
US3671798A (en) * | 1970-12-11 | 1972-06-20 | Nasa | Method and apparatus for limiting field-emission current |
US3735186A (en) * | 1971-03-10 | 1973-05-22 | Philips Corp | Field emission cathode |
DE2222845A1 (de) * | 1971-05-17 | 1972-12-07 | Itt Ind Gmbh Deutsche | Emittierende Elektrode und Verfahren zu ihrer Herstellung |
US3783325A (en) * | 1971-10-21 | 1974-01-01 | Us Army | Field effect electron gun having at least a million emitting fibers per square centimeter |
US3745402A (en) * | 1971-12-17 | 1973-07-10 | J Shelton | Field effect electron emitter |
US3746905A (en) * | 1971-12-21 | 1973-07-17 | Us Army | High vacuum, field effect electron tube |
US3840955A (en) * | 1973-12-12 | 1974-10-15 | J Hagood | Method for producing a field effect control device |
GB1466534A (en) * | 1974-03-08 | 1977-03-09 | Burroughs Corp | Cold cathode diplay device and method of making such devices |
GB1555800A (en) * | 1976-11-04 | 1979-11-14 | Emi Varian Ltd | Electron emitters |
US4472658A (en) * | 1980-05-13 | 1984-09-18 | Futaba Denshi Kogyo Kabushiki Kaisha | Fluorescent display device |
US4498952A (en) * | 1982-09-17 | 1985-02-12 | Condesin, Inc. | Batch fabrication procedure for manufacture of arrays of field emitted electron beams with integral self-aligned optical lense in microguns |
US5327050A (en) * | 1986-07-04 | 1994-07-05 | Canon Kabushiki Kaisha | Electron emitting device and process for producing the same |
DE3782247D1 (de) * | 1987-04-22 | 1992-11-19 | Christensen Alton O | Feldemissionsvorrichtung. |
GB2204991B (en) * | 1987-05-18 | 1991-10-02 | Gen Electric Plc | Vacuum electronic devices |
DE3853744T2 (de) * | 1987-07-15 | 1996-01-25 | Canon Kk | Elektronenemittierende Vorrichtung. |
US5749763A (en) * | 1987-07-15 | 1998-05-12 | Canon Kabushiki Kaisha | Display device with electron-emitting device with electron-emitting region insulted from electrodes |
GB8816689D0 (en) * | 1988-07-13 | 1988-08-17 | Emi Plc Thorn | Method of manufacturing cold cathode field emission device & field emission device manufactured by method |
FR2650119A1 (fr) * | 1989-07-21 | 1991-01-25 | Thomson Tubes Electroniques | Dispositif de regulation de courant individuel de pointe dans un reseau plan de microcathodes a effet de champ, et procede de realisation |
US5019003A (en) * | 1989-09-29 | 1991-05-28 | Motorola, Inc. | Field emission device having preformed emitters |
US5142184B1 (en) * | 1990-02-09 | 1995-11-21 | Motorola Inc | Cold cathode field emission device with integral emitter ballasting |
WO1991019023A2 (en) * | 1990-05-25 | 1991-12-12 | Savin Corporation | Electrophoretically deposited particle coatings and structures made therefrom |
US5312514A (en) * | 1991-11-07 | 1994-05-17 | Microelectronics And Computer Technology Corporation | Method of making a field emitter device using randomly located nuclei as an etch mask |
US5211707A (en) * | 1991-07-11 | 1993-05-18 | Gte Laboratories Incorporated | Semiconductor metal composite field emission cathodes |
US5129850A (en) * | 1991-08-20 | 1992-07-14 | Motorola, Inc. | Method of making a molded field emission electron emitter employing a diamond coating |
US5258685A (en) * | 1991-08-20 | 1993-11-02 | Motorola, Inc. | Field emission electron source employing a diamond coating |
US5141460A (en) * | 1991-08-20 | 1992-08-25 | Jaskie James E | Method of making a field emission electron source employing a diamond coating |
JP3255960B2 (ja) * | 1991-09-30 | 2002-02-12 | 株式会社神戸製鋼所 | 冷陰極エミッタ素子 |
US5252833A (en) * | 1992-02-05 | 1993-10-12 | Motorola, Inc. | Electron source for depletion mode electron emission apparatus |
US5290610A (en) * | 1992-02-13 | 1994-03-01 | Motorola, Inc. | Forming a diamond material layer on an electron emitter using hydrocarbon reactant gases ionized by emitted electrons |
US5371431A (en) * | 1992-03-04 | 1994-12-06 | Mcnc | Vertical microelectronic field emission devices including elongate vertical pillars having resistive bottom portions |
US5278475A (en) * | 1992-06-01 | 1994-01-11 | Motorola, Inc. | Cathodoluminescent display apparatus and method for realization using diamond crystallites |
JP3231528B2 (ja) * | 1993-08-17 | 2001-11-26 | 株式会社東芝 | 電界放出型冷陰極およびその製造方法 |
US5619092A (en) * | 1993-02-01 | 1997-04-08 | Motorola | Enhanced electron emitter |
US5597338A (en) * | 1993-03-01 | 1997-01-28 | Canon Kabushiki Kaisha | Method for manufacturing surface-conductive electron beam source device |
WO1994020975A1 (en) * | 1993-03-11 | 1994-09-15 | Fed Corporation | Emitter tip structure and field emission device comprising same, and method of making same |
DE69404000T2 (de) * | 1993-05-05 | 1998-01-29 | At & T Corp | Flache Bildwiedergabeanordnung und Herstellungsverfahren |
CA2164294A1 (en) * | 1993-06-02 | 1994-12-08 | Nalin Kumar | Amorphic diamond film flat field emission cathode |
KR0139489B1 (ko) * | 1993-07-08 | 1998-06-01 | 호소야 레이지 | 전계방출형 표시장치 |
US5463271A (en) * | 1993-07-09 | 1995-10-31 | Silicon Video Corp. | Structure for enhancing electron emission from carbon-containing cathode |
US5564959A (en) * | 1993-09-08 | 1996-10-15 | Silicon Video Corporation | Use of charged-particle tracks in fabricating gated electron-emitting devices |
JP3269065B2 (ja) * | 1993-09-24 | 2002-03-25 | 住友電気工業株式会社 | 電子デバイス |
JP2699827B2 (ja) * | 1993-09-27 | 1998-01-19 | 双葉電子工業株式会社 | 電界放出カソード素子 |
CN1134754A (zh) * | 1993-11-04 | 1996-10-30 | 微电子及计算机技术公司 | 制作平板显示系统和元件的方法 |
DE69432174T2 (de) * | 1993-11-24 | 2003-12-11 | Tdk Corp | Kaltkathoden-elektrodenquellenelement und verfahren zur herstellung desselben |
ATE194727T1 (de) * | 1993-12-17 | 2000-07-15 | Canon Kk | Herstellungsverfahren einer elektronen emittierenden vorrichtung, einer elektronenquelle und eine bilderzeugungsvorrichtung |
US5445550A (en) * | 1993-12-22 | 1995-08-29 | Xie; Chenggang | Lateral field emitter device and method of manufacturing same |
US5578901A (en) * | 1994-02-14 | 1996-11-26 | E. I. Du Pont De Nemours And Company | Diamond fiber field emitters |
US5602439A (en) * | 1994-02-14 | 1997-02-11 | The Regents Of The University Of California, Office Of Technology Transfer | Diamond-graphite field emitters |
DE4405768A1 (de) * | 1994-02-23 | 1995-08-24 | Till Keesmann | Feldemissionskathodeneinrichtung und Verfahren zu ihrer Herstellung |
EP0675519A1 (en) * | 1994-03-30 | 1995-10-04 | AT&T Corp. | Apparatus comprising field emitters |
EP0687018B1 (en) * | 1994-05-18 | 2003-02-19 | Kabushiki Kaisha Toshiba | Device for emitting electrons |
US5608283A (en) * | 1994-06-29 | 1997-03-04 | Candescent Technologies Corporation | Electron-emitting devices utilizing electron-emissive particles which typically contain carbon |
WO1996002063A1 (en) * | 1994-07-12 | 1996-01-25 | Amoco Corporation | Volcano-shaped field emitter structures |
GB9416754D0 (en) * | 1994-08-18 | 1994-10-12 | Isis Innovation | Field emitter structures |
US5504385A (en) * | 1994-08-31 | 1996-04-02 | At&T Corp. | Spaced-gate emission device and method for making same |
EP0700065B1 (en) * | 1994-08-31 | 2001-09-19 | AT&T Corp. | Field emission device and method for making same |
EP0700063A1 (en) * | 1994-08-31 | 1996-03-06 | International Business Machines Corporation | Structure and method for fabricating of a field emission device |
EP0706196B1 (en) * | 1994-10-05 | 2000-03-01 | Matsushita Electric Industrial Co., Ltd. | An electron emission cathode; an electron emission device, a flat display, a thermoelectric cooling device incorporating the same; and a method for producing the electron emission cathode |
US5623180A (en) * | 1994-10-31 | 1997-04-22 | Lucent Technologies Inc. | Electron field emitters comprising particles cooled with low voltage emitting material |
US5637950A (en) * | 1994-10-31 | 1997-06-10 | Lucent Technologies Inc. | Field emission devices employing enhanced diamond field emitters |
US5646702A (en) * | 1994-10-31 | 1997-07-08 | Honeywell Inc. | Field emitter liquid crystal display |
EP0713236A1 (en) * | 1994-11-18 | 1996-05-22 | Texas Instruments Incorporated | Electron emission apparatus |
EP0716438A1 (en) * | 1994-12-06 | 1996-06-12 | International Business Machines Corporation | Field emission device and method for fabricating it |
JP3423511B2 (ja) * | 1994-12-14 | 2003-07-07 | キヤノン株式会社 | 画像形成装置及びゲッタ材の活性化方法 |
US5709577A (en) * | 1994-12-22 | 1998-01-20 | Lucent Technologies Inc. | Method of making field emission devices employing ultra-fine diamond particle emitters |
US5543691A (en) * | 1995-05-11 | 1996-08-06 | Raytheon Company | Field emission display with focus grid and method of operating same |
US5585301A (en) * | 1995-07-14 | 1996-12-17 | Micron Display Technology, Inc. | Method for forming high resistance resistors for limiting cathode current in field emission displays |
US5628662A (en) * | 1995-08-30 | 1997-05-13 | Texas Instruments Incorporated | Method of fabricating a color field emission flat panel display tetrode |
-
1996
- 1996-08-02 US US09/011,345 patent/US6097139A/en not_active Expired - Fee Related
- 1996-08-02 WO PCT/GB1996/001858 patent/WO1997006549A1/en active IP Right Grant
- 1996-08-02 ES ES96925901T patent/ES2146890T3/es not_active Expired - Lifetime
- 1996-08-02 KR KR10-1998-0700810A patent/KR100405886B1/ko not_active IP Right Cessation
- 1996-08-02 AU AU66260/96A patent/AU6626096A/en not_active Abandoned
- 1996-08-02 CN CN96196039A patent/CN1103110C/zh not_active Expired - Fee Related
- 1996-08-02 DE DE69607356T patent/DE69607356T2/de not_active Expired - Fee Related
- 1996-08-02 CA CA002227322A patent/CA2227322A1/en not_active Abandoned
- 1996-08-02 JP JP9508212A patent/JPH11510307A/ja not_active Ceased
- 1996-08-02 EP EP96925901A patent/EP0842526B1/en not_active Expired - Lifetime
- 1996-08-02 GB GB9616334A patent/GB2304989B/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
GB9616334D0 (en) | 1996-09-11 |
US6097139A (en) | 2000-08-01 |
KR100405886B1 (ko) | 2004-04-03 |
WO1997006549A1 (en) | 1997-02-20 |
CN1192288A (zh) | 1998-09-02 |
DE69607356T2 (de) | 2000-12-07 |
KR19990036142A (ko) | 1999-05-25 |
CA2227322A1 (en) | 1997-02-20 |
CN1103110C (zh) | 2003-03-12 |
EP0842526B1 (en) | 2000-03-22 |
GB2304989A (en) | 1997-03-26 |
EP0842526A1 (en) | 1998-05-20 |
DE69607356D1 (de) | 2000-04-27 |
AU6626096A (en) | 1997-03-05 |
JPH11510307A (ja) | 1999-09-07 |
GB2304989B (en) | 1997-09-03 |
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