ES2080441T3 - Aparato obturador desmontable para una camara de proceso de semiconductores. - Google Patents

Aparato obturador desmontable para una camara de proceso de semiconductores.

Info

Publication number
ES2080441T3
ES2080441T3 ES92302230T ES92302230T ES2080441T3 ES 2080441 T3 ES2080441 T3 ES 2080441T3 ES 92302230 T ES92302230 T ES 92302230T ES 92302230 T ES92302230 T ES 92302230T ES 2080441 T3 ES2080441 T3 ES 2080441T3
Authority
ES
Spain
Prior art keywords
processing
plate
substrate
shutter
sealing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
ES92302230T
Other languages
English (en)
Inventor
Avi Tepman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of ES2080441T3 publication Critical patent/ES2080441T3/es
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

LA INVENCION SE REFIERE A UN APARATO OBTURADOR SEPARABLE PARA UN APARATO DE DEPOSITACION O GRABACION QUIMICA QUE INCLUYE UN MECANISMO OBTURADOR (68, 70, 72) DISPUESTO EN EL INTERIOR DE UNA CAMARA DE PROCESAMIENTO (42) Y ADAPTADO PARA SOPORTAR UNA PLACA OBTURADORA (66) ENTRE UNA POSICION RETRAIDA Y UNA POSICION EXTENDIDA EN LA QUE ES ENGANCHADA POR UN DISPOSITIVO ELEVADOR (56, 57) Y MOVIDA A SU SITIO CERRANDO LA ABERTURA DE METALIZACION NORMAL (38) COMO SI FUERA UN SUBSTRATO (46) A SER PROCESADO. CUANDO UN NUEVO SUBSTRATO (46) ESTA PRESENTE PARA SU PROCESAMIENTO, EL MECANISMO ELEVADOR (56, 57) HARA DESCENDER LA PLACA DEL OBTURADOR (66) DE NUEVO SOBRE EL MECANISMO DE OBTURACION Y SERA LLEVADA HASTA SU POSICION RETRAIDA FUERA DEL CAMINO DE LA OPERACION DE PROCESAMIENTO Y MANEJO NORMAL. A CAUSA DE QUE LA PLACA DEL OBTURADOR (66) ES GEOMETRICAMENTE SIMILAR AL SUBSTRATO Y SE MANEJA POR EL MISMO DISPOSITIVO ELEVADOR (56, 57), EL MISMO MECANISMO DE OBTURACION ROBOTICA (53, 51) USADO PARA TRANSPORTAR SUBSTRATOS DENTRO Y FUERA DE LA CAMARA, PUEDE USARSE PARA SACAR DE FORMA PERIODICA Y REEMPLAZAR UNA PLACA OBTURADORA USADA (66) CON UNA NUEVA PLACA SIN DETENER EL SISTEMA. UNA IMPORTANTE VENTAJA DE LA PRESENTE INVENCION ES QUE EL OBTURADOR CIERRA, Y DE ESTA FORMA DEJA SIN LUZ, EXACTAMENTE LA MISMA APERTURA DE PROCESAMIENTO CERRADA POR EL SUBSTRATO DURANTE SU PROCESAMIENTO.
ES92302230T 1991-04-30 1992-03-16 Aparato obturador desmontable para una camara de proceso de semiconductores. Expired - Lifetime ES2080441T3 (es)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/693,844 US5223112A (en) 1991-04-30 1991-04-30 Removable shutter apparatus for a semiconductor process chamber

Publications (1)

Publication Number Publication Date
ES2080441T3 true ES2080441T3 (es) 1996-02-01

Family

ID=24786344

Family Applications (1)

Application Number Title Priority Date Filing Date
ES92302230T Expired - Lifetime ES2080441T3 (es) 1991-04-30 1992-03-16 Aparato obturador desmontable para una camara de proceso de semiconductores.

Country Status (6)

Country Link
US (1) US5223112A (es)
EP (1) EP0511733B1 (es)
JP (1) JPH0738406B2 (es)
KR (1) KR100240196B1 (es)
DE (1) DE69206312T2 (es)
ES (1) ES2080441T3 (es)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06204323A (ja) * 1992-10-27 1994-07-22 Applied Materials Inc ウェハプロセスチャンバ内のドーム状加熱ペディスタルのためのクランプリング
DE4312014A1 (de) * 1993-04-13 1994-10-20 Leybold Ag Vorrichtung zum Beschichten und/oder Ätzen von Substraten in einer Vakuumkammer
JP2642849B2 (ja) * 1993-08-24 1997-08-20 株式会社フロンテック 薄膜の製造方法および製造装置
US5382339A (en) * 1993-09-17 1995-01-17 Applied Materials, Inc. Shield and collimator pasting deposition chamber with a side pocket for pasting the bottom of the collimator
US5791895A (en) * 1994-02-17 1998-08-11 Novellus Systems, Inc. Apparatus for thermal treatment of thin film wafer
JPH07335552A (ja) * 1994-06-08 1995-12-22 Tel Varian Ltd 処理装置
US5705080A (en) * 1994-07-06 1998-01-06 Applied Materials, Inc. Plasma-inert cover and plasma cleaning process
TW359849B (en) * 1994-12-08 1999-06-01 Tokyo Electron Ltd Sputtering apparatus having an on board service module
US5772858A (en) * 1995-07-24 1998-06-30 Applied Materials, Inc. Method and apparatus for cleaning a target in a sputtering source
JP3005179B2 (ja) * 1995-08-21 2000-01-31 アプライド マテリアルズ インコーポレイテッド スパッタリング装置用のシャッタ装置
US5830272A (en) * 1995-11-07 1998-11-03 Sputtered Films, Inc. System for and method of providing a controlled deposition on wafers
US5914018A (en) * 1996-08-23 1999-06-22 Applied Materials, Inc. Sputter target for eliminating redeposition on the target sidewall
TW358964B (en) 1996-11-21 1999-05-21 Applied Materials Inc Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma
US6451179B1 (en) 1997-01-30 2002-09-17 Applied Materials, Inc. Method and apparatus for enhancing sidewall coverage during sputtering in a chamber having an inductively coupled plasma
US6103069A (en) * 1997-03-31 2000-08-15 Applied Materials, Inc. Chamber design with isolation valve to preserve vacuum during maintenance
US6042700A (en) * 1997-09-15 2000-03-28 Applied Materials, Inc. Adjustment of deposition uniformity in an inductively coupled plasma source
US6023038A (en) * 1997-09-16 2000-02-08 Applied Materials, Inc. Resistive heating of powered coil to reduce transient heating/start up effects multiple loadlock system
US6098637A (en) * 1998-03-03 2000-08-08 Applied Materials, Inc. In situ cleaning of the surface inside a vacuum processing chamber
IT1312248B1 (it) 1999-04-12 2002-04-09 Getters Spa Metodo per aumentare la produttivita' di processi di deposizione distrati sottili su un substrato e dispositivi getter per la
AT409348B (de) * 1999-04-22 2002-07-25 Thallner Erich Vorrichtung zum auftragen von materialien auf substrate, insbesondere zum belacken von si-wafern
JP2002170823A (ja) * 2000-09-19 2002-06-14 Hitachi Kokusai Electric Inc 半導体製造装置および半導体装置の製造方法並びにそれに使用されるカバー部材
US6663333B2 (en) * 2001-07-13 2003-12-16 Axcelis Technologies, Inc. Wafer transport apparatus
US6733640B2 (en) 2002-01-14 2004-05-11 Seagate Technology Llc Shutter assembly having optimized shutter opening shape for thin film uniformity
US7008517B2 (en) * 2002-02-20 2006-03-07 Applied Materials, Inc. Shutter disk and blade for physical vapor deposition chamber
US6921555B2 (en) 2002-08-06 2005-07-26 Tegal Corporation Method and system for sequential processing in a two-compartment chamber
US7153542B2 (en) * 2002-08-06 2006-12-26 Tegal Corporation Assembly line processing method
US20050205209A1 (en) * 2004-03-18 2005-09-22 Aelan Mosden Replacing chamber components in a vacuum environment
KR100587688B1 (ko) * 2004-07-28 2006-06-08 삼성전자주식회사 화학 기상 증착 장치
US7334950B2 (en) * 2005-04-26 2008-02-26 Va, Inc. Quick-change shutter assembly
US20080279672A1 (en) * 2007-05-11 2008-11-13 Bachrach Robert Z Batch equipment robots and methods of stack to array work-piece transfer for photovoltaic factory
US7496423B2 (en) * 2007-05-11 2009-02-24 Applied Materials, Inc. Method of achieving high productivity fault tolerant photovoltaic factory with batch array transfer robots
US20080279658A1 (en) * 2007-05-11 2008-11-13 Bachrach Robert Z Batch equipment robots and methods within equipment work-piece transfer for photovoltaic factory
US20080292433A1 (en) * 2007-05-11 2008-11-27 Bachrach Robert Z Batch equipment robots and methods of array to array work-piece transfer for photovoltaic factory
US7951637B2 (en) * 2008-08-27 2011-05-31 Applied Materials, Inc. Back contact solar cells using printed dielectric barrier
US8807075B2 (en) * 2008-09-22 2014-08-19 Applied Materials, Inc. Shutter disk having a tuned coefficient of thermal expansion
US20100089315A1 (en) * 2008-09-22 2010-04-15 Applied Materials, Inc. Shutter disk for physical vapor deposition chamber
CN101978093B (zh) 2008-11-28 2012-02-01 佳能安内华股份有限公司 沉积设备和电子装置制造方法
US20100304027A1 (en) * 2009-05-27 2010-12-02 Applied Materials, Inc. Substrate processing system and methods thereof
DE102010000447A1 (de) * 2010-02-17 2011-08-18 Aixtron Ag, 52134 Beschichtungsvorrichtung sowie Verfahren zum Betrieb einer Beschichtungsvorrichtung mit einer Schirmplatte
JP6054314B2 (ja) * 2011-03-01 2016-12-27 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ 基板搬送及びラジカル閉じ込めのための方法及び装置
JP5665679B2 (ja) * 2011-07-14 2015-02-04 住友重機械工業株式会社 不純物導入層形成装置及び静電チャック保護方法
CN104011882A (zh) 2012-01-12 2014-08-27 应用材料公司 制造太阳能电池装置的方法
US20170115657A1 (en) * 2015-10-22 2017-04-27 Lam Research Corporation Systems for Removing and Replacing Consumable Parts from a Semiconductor Process Module in Situ
US9666461B1 (en) * 2016-02-05 2017-05-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor process and semiconductor processing device using the same
JP6970624B2 (ja) * 2018-02-13 2021-11-24 東京エレクトロン株式会社 成膜システム及び基板上に膜を形成する方法

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US4756815A (en) * 1979-12-21 1988-07-12 Varian Associates, Inc. Wafer coating system
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JPH086178B2 (ja) * 1987-03-25 1996-01-24 日本真空技術株式会社 薄膜形成装置
US4851101A (en) * 1987-09-18 1989-07-25 Varian Associates, Inc. Sputter module for modular wafer processing machine

Also Published As

Publication number Publication date
KR920020597A (ko) 1992-11-21
EP0511733A1 (en) 1992-11-04
DE69206312T2 (de) 1996-04-18
US5223112A (en) 1993-06-29
JPH0738406B2 (ja) 1995-04-26
DE69206312D1 (de) 1996-01-11
JPH05259258A (ja) 1993-10-08
EP0511733B1 (en) 1995-11-29
KR100240196B1 (ko) 2000-01-15

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