DE69206312D1 - Abnehmbare Verschlussvorrichtung für eine Prozesskammer zur Behandlung von Halbleitern. - Google Patents

Abnehmbare Verschlussvorrichtung für eine Prozesskammer zur Behandlung von Halbleitern.

Info

Publication number
DE69206312D1
DE69206312D1 DE69206312T DE69206312T DE69206312D1 DE 69206312 D1 DE69206312 D1 DE 69206312D1 DE 69206312 T DE69206312 T DE 69206312T DE 69206312 T DE69206312 T DE 69206312T DE 69206312 D1 DE69206312 D1 DE 69206312D1
Authority
DE
Germany
Prior art keywords
semiconductors
treatment
process chamber
closure device
removable closure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69206312T
Other languages
English (en)
Other versions
DE69206312T2 (de
Inventor
Avi Tepman
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of DE69206312D1 publication Critical patent/DE69206312D1/de
Application granted granted Critical
Publication of DE69206312T2 publication Critical patent/DE69206312T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
DE69206312T 1991-04-30 1992-03-16 Abnehmbare Verschlussvorrichtung für eine Prozesskammer zur Behandlung von Halbleitern. Expired - Fee Related DE69206312T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US07/693,844 US5223112A (en) 1991-04-30 1991-04-30 Removable shutter apparatus for a semiconductor process chamber

Publications (2)

Publication Number Publication Date
DE69206312D1 true DE69206312D1 (de) 1996-01-11
DE69206312T2 DE69206312T2 (de) 1996-04-18

Family

ID=24786344

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69206312T Expired - Fee Related DE69206312T2 (de) 1991-04-30 1992-03-16 Abnehmbare Verschlussvorrichtung für eine Prozesskammer zur Behandlung von Halbleitern.

Country Status (6)

Country Link
US (1) US5223112A (de)
EP (1) EP0511733B1 (de)
JP (1) JPH0738406B2 (de)
KR (1) KR100240196B1 (de)
DE (1) DE69206312T2 (de)
ES (1) ES2080441T3 (de)

Families Citing this family (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06204323A (ja) * 1992-10-27 1994-07-22 Applied Materials Inc ウェハプロセスチャンバ内のドーム状加熱ペディスタルのためのクランプリング
DE4312014A1 (de) * 1993-04-13 1994-10-20 Leybold Ag Vorrichtung zum Beschichten und/oder Ätzen von Substraten in einer Vakuumkammer
JP2642849B2 (ja) * 1993-08-24 1997-08-20 株式会社フロンテック 薄膜の製造方法および製造装置
US5382339A (en) * 1993-09-17 1995-01-17 Applied Materials, Inc. Shield and collimator pasting deposition chamber with a side pocket for pasting the bottom of the collimator
US5791895A (en) * 1994-02-17 1998-08-11 Novellus Systems, Inc. Apparatus for thermal treatment of thin film wafer
JPH07335552A (ja) * 1994-06-08 1995-12-22 Tel Varian Ltd 処理装置
US5705080A (en) * 1994-07-06 1998-01-06 Applied Materials, Inc. Plasma-inert cover and plasma cleaning process
TW359849B (en) * 1994-12-08 1999-06-01 Tokyo Electron Ltd Sputtering apparatus having an on board service module
US5772858A (en) * 1995-07-24 1998-06-30 Applied Materials, Inc. Method and apparatus for cleaning a target in a sputtering source
JP3005179B2 (ja) * 1995-08-21 2000-01-31 アプライド マテリアルズ インコーポレイテッド スパッタリング装置用のシャッタ装置
US5830272A (en) * 1995-11-07 1998-11-03 Sputtered Films, Inc. System for and method of providing a controlled deposition on wafers
US5914018A (en) * 1996-08-23 1999-06-22 Applied Materials, Inc. Sputter target for eliminating redeposition on the target sidewall
TW358964B (en) 1996-11-21 1999-05-21 Applied Materials Inc Method and apparatus for improving sidewall coverage during sputtering in a chamber having an inductively coupled plasma
US6451179B1 (en) 1997-01-30 2002-09-17 Applied Materials, Inc. Method and apparatus for enhancing sidewall coverage during sputtering in a chamber having an inductively coupled plasma
US6103069A (en) * 1997-03-31 2000-08-15 Applied Materials, Inc. Chamber design with isolation valve to preserve vacuum during maintenance
US6042700A (en) * 1997-09-15 2000-03-28 Applied Materials, Inc. Adjustment of deposition uniformity in an inductively coupled plasma source
US6023038A (en) * 1997-09-16 2000-02-08 Applied Materials, Inc. Resistive heating of powered coil to reduce transient heating/start up effects multiple loadlock system
US6098637A (en) * 1998-03-03 2000-08-08 Applied Materials, Inc. In situ cleaning of the surface inside a vacuum processing chamber
IT1312248B1 (it) 1999-04-12 2002-04-09 Getters Spa Metodo per aumentare la produttivita' di processi di deposizione distrati sottili su un substrato e dispositivi getter per la
AT409348B (de) * 1999-04-22 2002-07-25 Thallner Erich Vorrichtung zum auftragen von materialien auf substrate, insbesondere zum belacken von si-wafern
JP2002170823A (ja) * 2000-09-19 2002-06-14 Hitachi Kokusai Electric Inc 半導体製造装置および半導体装置の製造方法並びにそれに使用されるカバー部材
US6663333B2 (en) * 2001-07-13 2003-12-16 Axcelis Technologies, Inc. Wafer transport apparatus
US6733640B2 (en) 2002-01-14 2004-05-11 Seagate Technology Llc Shutter assembly having optimized shutter opening shape for thin film uniformity
US7008517B2 (en) * 2002-02-20 2006-03-07 Applied Materials, Inc. Shutter disk and blade for physical vapor deposition chamber
US7153542B2 (en) * 2002-08-06 2006-12-26 Tegal Corporation Assembly line processing method
US6921555B2 (en) 2002-08-06 2005-07-26 Tegal Corporation Method and system for sequential processing in a two-compartment chamber
US20050205209A1 (en) * 2004-03-18 2005-09-22 Aelan Mosden Replacing chamber components in a vacuum environment
KR100587688B1 (ko) * 2004-07-28 2006-06-08 삼성전자주식회사 화학 기상 증착 장치
US7334950B2 (en) * 2005-04-26 2008-02-26 Va, Inc. Quick-change shutter assembly
US20080292433A1 (en) * 2007-05-11 2008-11-27 Bachrach Robert Z Batch equipment robots and methods of array to array work-piece transfer for photovoltaic factory
US20080279672A1 (en) * 2007-05-11 2008-11-13 Bachrach Robert Z Batch equipment robots and methods of stack to array work-piece transfer for photovoltaic factory
US7496423B2 (en) * 2007-05-11 2009-02-24 Applied Materials, Inc. Method of achieving high productivity fault tolerant photovoltaic factory with batch array transfer robots
US20080279658A1 (en) * 2007-05-11 2008-11-13 Bachrach Robert Z Batch equipment robots and methods within equipment work-piece transfer for photovoltaic factory
CN102132422A (zh) * 2008-08-27 2011-07-20 应用材料股份有限公司 利用印刷介电阻障的背接触太阳能电池
US8807075B2 (en) * 2008-09-22 2014-08-19 Applied Materials, Inc. Shutter disk having a tuned coefficient of thermal expansion
US20100089315A1 (en) 2008-09-22 2010-04-15 Applied Materials, Inc. Shutter disk for physical vapor deposition chamber
JP4598161B2 (ja) * 2008-11-28 2010-12-15 キヤノンアネルバ株式会社 成膜装置、電子デバイスの製造方法
US20100304027A1 (en) * 2009-05-27 2010-12-02 Applied Materials, Inc. Substrate processing system and methods thereof
DE102010000447A1 (de) * 2010-02-17 2011-08-18 Aixtron Ag, 52134 Beschichtungsvorrichtung sowie Verfahren zum Betrieb einer Beschichtungsvorrichtung mit einer Schirmplatte
US10090181B2 (en) * 2011-03-01 2018-10-02 Applied Materials, Inc. Method and apparatus for substrate transfer and radical confinement
JP5665679B2 (ja) * 2011-07-14 2015-02-04 住友重機械工業株式会社 不純物導入層形成装置及び静電チャック保護方法
WO2013106225A1 (en) 2012-01-12 2013-07-18 Applied Materials, Inc. Methods of manufacturing solar cell devices
US20170115657A1 (en) * 2015-10-22 2017-04-27 Lam Research Corporation Systems for Removing and Replacing Consumable Parts from a Semiconductor Process Module in Situ
US9666461B1 (en) * 2016-02-05 2017-05-30 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor process and semiconductor processing device using the same
JP6970624B2 (ja) * 2018-02-13 2021-11-24 東京エレクトロン株式会社 成膜システム及び基板上に膜を形成する方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1301653A (de) * 1969-01-02 1973-01-04
US4756815A (en) * 1979-12-21 1988-07-12 Varian Associates, Inc. Wafer coating system
US4548699A (en) * 1984-05-17 1985-10-22 Varian Associates, Inc. Transfer plate rotation system
US4718975A (en) * 1986-10-06 1988-01-12 Texas Instruments Incorporated Particle shield
JPH086178B2 (ja) * 1987-03-25 1996-01-24 日本真空技術株式会社 薄膜形成装置
US4851101A (en) * 1987-09-18 1989-07-25 Varian Associates, Inc. Sputter module for modular wafer processing machine

Also Published As

Publication number Publication date
JPH0738406B2 (ja) 1995-04-26
EP0511733A1 (de) 1992-11-04
KR920020597A (ko) 1992-11-21
ES2080441T3 (es) 1996-02-01
JPH05259258A (ja) 1993-10-08
US5223112A (en) 1993-06-29
EP0511733B1 (de) 1995-11-29
DE69206312T2 (de) 1996-04-18
KR100240196B1 (ko) 2000-01-15

Similar Documents

Publication Publication Date Title
DE69206312D1 (de) Abnehmbare Verschlussvorrichtung für eine Prozesskammer zur Behandlung von Halbleitern.
DE69015905D1 (de) Vorrichtung zur Behandlung von Flüssigkeiten.
DE69307509T2 (de) Vorrichtung zur behandlung von herzfehlern
DE69434773D1 (de) Vorrichtung zur schnellen thermischen Behandlung zur Herstellung von Halbleiterwafern
DE68904248D1 (de) Einrichtung zur behandlung von fluessigkeiten.
DE69014030D1 (de) Mittel für die Verhütung und Behandlung von Diarrhöe.
DE69034092D1 (de) Vorrichtung zur Behandlung von Proben
DE3870508D1 (de) Zusammensetzung zur behandlung des haares.
DE69130987D1 (de) Vorrichtung zur Behandlung von Halbleiter-Plättchen
DE69421196T2 (de) Vorrichtung zur behandlung von überbiss
DE69200684T2 (de) Vorrichtung zur thermischen Behandlung von laufenden Garnen.
DE69022269D1 (de) Verfahren zur thermischen Behandlung von Silizium.
DE3888056D1 (de) Oxadiazolyl-azabicycloheptane zur Behandlung von seniler Demenz.
DE69133144T2 (de) Reaktor zur Behandlung von Wafern
DE3885460D1 (de) Vorrichtung zur behandlung von flüssigkeiten.
DE69420487T2 (de) Vorrichtung zur thermischen Behandlung von laufenden Garnen
DE69200603T2 (de) Verfahren zur Behandlung von verbrauchten Nickelenthaltenden Ätzlösungen.
DE3751510D1 (de) Düse zur Behandlung von Fäden.
DE69110029D1 (de) Vorrichtung zur Herstellung von Halbleitern und Verfahren zur Kontrolle der thermischen Behandlung von Wafers.
DE69314413D1 (de) Piperidino-3,4-dihydrocarbostyryl Verbindungen zur Behandlung von ischämischen Störungen
DE59104484D1 (de) Verfahren und Vorrichtung zur Behandlung von feuchten Gas-Staub-Gemischen.
ATA84689A (de) Einrichtung zur behandlung von gasen
DE59102929D1 (de) Ausstattungsmaschine zur behandlung von gefässen.
DE69320189T2 (de) Vorrichtung zur behandlung von flüssigkeit
DE69100531D1 (de) Vorrichtung zur Behandlung von Pflanzen.

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee