EP3509113A1 - Verfahren zur herstellung eines lichtemittierenden bauelements - Google Patents

Verfahren zur herstellung eines lichtemittierenden bauelements Download PDF

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Publication number
EP3509113A1
EP3509113A1 EP19152171.5A EP19152171A EP3509113A1 EP 3509113 A1 EP3509113 A1 EP 3509113A1 EP 19152171 A EP19152171 A EP 19152171A EP 3509113 A1 EP3509113 A1 EP 3509113A1
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EP
European Patent Office
Prior art keywords
light emitting
region
wavelength converting
emitting element
converting member
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP19152171.5A
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English (en)
French (fr)
Inventor
Masatsugu Ichikawa
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Nichia Corp
Original Assignee
Nichia Corp
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Filing date
Publication date
Application filed by Nichia Corp filed Critical Nichia Corp
Publication of EP3509113A1 publication Critical patent/EP3509113A1/de
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H01L33/18—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous within the light emitting region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
    • H01L33/502—Wavelength conversion materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements

Definitions

  • the present invention relates to a light emitting device in which a light emitting element and a wavelength converting member are bonded, and a method of manufacturing the light emitting device.
  • Patent Literature 1 describes that a "nucleation layer” made of GaN is grown on a growth substrate made of sapphire, and the "nucleation layer” and a “ceramic phosphor” are bonded at high temperature and high pressure.
  • Patent Literature 1 JP2006-352085A
  • an object of the present invention is to provide a light emitting device having strong bonding strength between the light emitting element and the wavelength converting member.
  • a light emitting device of an embodiment of the present invention includes a light emitting element and a wavelength converting member bonded with each other.
  • the light emitting element has, from the wavelength converting member side, a first region and a second region
  • the wavelength converting member has, from the light emitting element side, a third region and a fourth region
  • the first region has an irregular atomic arrangement compared with the second region
  • the third region has an irregular atomic arrangement compared with the fourth region
  • the first region and the third region are directly bonded.
  • the light emitting element includes a substrate having the first region and the second region and a semiconductor stacked layer portion formed on the substrate.
  • the wavelength converting member has a support member which has the third region and the fourth region and a fluorescent material which is contained in the support member.
  • the substrate is made of sapphire and the support member is made of aluminum oxide.
  • a method of manufacturing a light emitting device includes a step of preparing a light emitting element, a step of preparing a wavelength converting member, and a step of bonding the light emitting element and the wavelength converting member by using a surface activated bonding technique.
  • the light emitting element has a substrate made of sapphire and a semiconductor stacked portion formed on the substrate, the wavelength converting member has a support member made of aluminum oxide and a fluorescent material contained in the support member, and the substrate and the support member are bonded in the bonding step.
  • a light emitting device having strong bonding strength between the light emitting element and the wavelength converting member can be provided.
  • FIG. 1 is a cross-sectional view in a direction perpendicular to a light emission observation surface of a light emitting device according to an embodiment.
  • FIG. 2 is an enlarged view of the region of FIG. 1 inside the broken line.
  • a light emitting element 10 has, as shown in FIG. 1 for example, a substrate 11 made of sapphire and a semiconductor stacked layer portion 12 formed on the substrate 11, and a p-electrode 13 and an n-electrode 14 formed on the semiconductor stacked layer portion 12.
  • the wavelength converting member 20 is made of a base member (support member) which serves as a base and a fluorescent material contained in the base member.
  • the substrate 11 of the light emitting element 10 has, from the wavelength converting member 20 side, a first region 11a and a second region 11b
  • the wavelength converting member 20 has, from the light emitting element 10 side, a third region 20a and a fourth region 20b.
  • the first region 11a has an irregular atomic arrangement compared with the second region 11b
  • the third region 20a has an irregular atomic arrangement compared with the fourth region 20b.
  • the first region 11a and the third region 20a are directly bonded and thus the light emitting element 10 and the wavelength converting member 20 are bonded.
  • first region 11a indicates a region directly in contact with the wavelength converting member 20 in the light emitting element 10.
  • second region 11b indicates a region abutting (directly in contact with) the "first region 11a” in the light emitting element 10.
  • third region 20a indicates a region of the wavelength converting member 20 which is directly in contact with the light emitting element 10.
  • fourth region 20b indicates a region of the wavelength converting member 20 which is abutting the "third region 20a”.
  • the first region 11a having an irregular atomic arrangement compared with the second region 11b, and the third region 20a having an irregular atomic arrangement compared with the fourth region 20b are directly in contact with each other and bonded to form a bonded interface X, and the second region 11b and the fourth region 20b are respectively spaced apart from the bonding interface X.
  • the first region 11a and the second region 11b are abutted to each other, but the first region and the second region have the same composition.
  • the members having different compositions are adjacent to each other, they are not indicated as the first region and the second region as in the present invention.
  • the semiconductor layer is indicated as the first region and the sapphire substrate is indicated as the second region. That is, the first region 11a and the second region 11b (the third region 20a and the fourth region 20b) in the present specification are fundamentally a single member with the same composition, but a part of the member is indicated as the first region and a different part of the same member is indicated as the second region. Whether a part belongs to a certain member can be determined, for example, through a cross-sectional observation at atomic level by high-resolution transmission electron microscopy or through a comparison of composition from elemental analysis.
  • the light emitting element 10 and the wavelength converting member 20 can be firmly bonded.
  • the first region 11a and the third region 20a as a whole is capable of absorbing a strain developed between the light emitting element 10 and the wavelength converting member 20.
  • a strain may occur between the light emitting element10 and the wavelength converting member 20 due to differences in the lattice constant or in the thermal expansion coefficient.
  • enhancing of the bonding strength between the light emitting element 10 and the wavelength converting member 20 by way of thermal bonding has a limitation.
  • the light emitting element 10 and the wavelength converting member 20 are bonded through an adhesive agent made of a resin, strain may occur at each interface, because a resin has a relatively large thermal expansion.
  • the light emitting device according to the present embodiment does not require a resin to be interposed, so that a stronger bonding can be achieved.
  • strain at the bonding interface X can be reduced through the first region 11a and the third region 20a, so that generation of stress in the fluorescent materials around the bonding interface X can be suppressed.
  • the wavelength converting member 20 contains a fluorescent material, so that stress associated with heat generation in the fluorescent material tends to occur. Generation of stress in the fluorescent material may cause an increase in the half bandwidth of the emission spectrum and decrease in the luminous flux, and thus undesirable. However, according to the present embodiment, an adverse influence of the strain on the fluorescent material can be reduced.
  • the light emitting element 10 and the wavelength converting member 20 are directly bonded.
  • directly bonding the light emitting element 10 and the wavelength converting member 20 enables to reduce the number of the interfaces which reflect light (or totally reflect light depends on the angle of incidence) to one, and thus enables to improve the extraction of light as a whole device.
  • an adhesive made of a resin in interposed between the light emitting element 10 and the wavelength converting member 20 a sum of two interfaces (an interface between the light emitting element and the adhesive agent and an interface between the wavelength converting member and the adhesive agent) exist.
  • the light emitting element 10 and the wavelength converting member 20 are directly bonded, only one interface (interface between the light emitting element 10 and the wavelength converting member 20) exists.
  • the present invention is capable of reducing the difference in the refractive indices between the substrate 11 which constitutes a part of the light emitting element and the wavelength converting member 20, and thus reflection at the interface can be reduced.
  • the first region 11a or the third region 20a, or the both regions are preferably made of amorphous having higher atomic irregularity, and more preferably in a metastable, non-equilibrium amorphous state.
  • Either the second region 11b or the fourth region 20b may be preferably made of a polycrystal or a single crystal, more preferably made of a single crystal.
  • the second region 11b and/or the fourth region 20b being a polycrystal or a single crystal (particularly a single crystal) is thought to induce the strain therebetween.
  • the present embodiment is particularly effective in such a state.
  • the first region 11a and the third region 20a are preferably disposed on substantially the entire area of the bonding interface X.
  • the region to which the first region 11a and the third region 20a are directly bonded may be a part of the bonding interface X, and which is in the scope of the present invention as long as it exerts the effects as described above.
  • the first region 11a and the third region 20a respectively have a thickness of preferably 1 nm to 20 nm, further preferably 2 nm to 10 nm. With this arrangement, the effect of reducing the strains can be sufficiently obtained, so that the bonding strength can be enhanced. Further, making the first region 11a and the third region 20a with an irregular atomic arrangement may adversely affect the extraction of light, but in the range as described above, the thickness of the portion of optical attenuation can be substantially reduced, and thus optical loss can be reduced.
  • the light emitting element 10 is not limited and a known light emitting element can be used.
  • the light emitting element 10 may be include a substrate 11, a semiconductor stacked layer portion 12 disposed on the substrate 11, and a pair of electrodes 13 and 14 disposed on the same surface side of the semiconductor stacked layer portion 12.
  • the substrate 11 sapphire, GaN, or the like, can be employed.
  • the semiconductor stacked layer portion 12 a stacked layer of a plurality of nitride semiconductor layers (AlInGaN), or the like, can be employed.
  • AlInGaN nitride semiconductor layers
  • the wavelength converting member 20 side is preferably used as the viewing side.
  • the support member, which to be described later, of the wavelength converting member 20 is made of aluminum oxide and that the sapphire and the aluminum oxide are directly bonded. That is, the first region 11a and the second region 11b are formed in the sapphire and the third region 20a and the fourth region 20b are formed in the aluminum oxide, and the first region 11a and the third region 20a are directly bonded.
  • the same compositional elements can be used for the substrate and the support member, so that bonding strength of the both can be further enhanced.
  • the refractive indices of the substrate and the support member can made substantially the same, so that the total reflection of light at the interface can be reduced and light extraction of the light emitting device can be improved.
  • the crystal structure of aluminum oxide may be preferably a polycrystal or a single crystal, more preferably a single crystal (sapphire). With this arrangement, a similar or the same structure as the substrate made of sapphire can be obtained and therefore the effects as described above can be easily obtained.
  • a bonding substrate such as Si is adhered to the semiconductor stacked layer structure, then the initial substrate is removed and the bonding substrate and a wavelength converting member may be bonded. Further, regardless of whether a substrate is used, the semiconductor stacked layer portion and the wavelength converting member can be bonded. In the case where the semiconductor stacked layer portion and the wavelength converting member are bonded, one semiconductor layer at the most outer side of the semiconductor stacked layer portion to be bonded to the wavelength converting member has, from the wavelength converting member side, a first region and a second region, and the first region has an irregular atomic arrangement compared with the second region.
  • the wavelength converting member 20 is capable of converting light from the light emitting element 10 into light having different wavelength distribution, and the material thereof is not limited, and a known material can be used.
  • the wavelength converting member 20 may be a fluorescent material, or may includes a fluorescent material and a support member which support the fluorescent material.
  • the wavelength converting member 20 includes a fluorescent material and a support member, for example, the wavelength converting member 20 is an eutectic of a fluorescent material and a support member formed by using an irreversible coagulation technique, or the wavelength converting member 20 is integrally formed by sintering a fluorescent material powder and a material powder of the support member.
  • the fluorescent material is not limited and a known fluorescent material can be used.
  • a YAG (yttrium aluminum garnet) based fluorescent material and/or a TAG (terbium aluminum garnet) based fluorescent material may be used.
  • a YAG (yttrium aluminum garnet) based fluorescent material and/or a TAG (terbium aluminum garnet) based fluorescent material may be used.
  • TAG terbium aluminum garnet
  • the support member is not limited and a known support member can be used.
  • a known support member can be used.
  • aluminum oxide, aluminum nitride, YAG (non-luminous, because an activator is not contained), and/or yttrium oxide can be used.
  • the fluorescent material has a base member and an activator, and the support member is preferably made of the same materials as the base member.
  • the difference in the refractive indices between the fluorescent material and the support member can be substantially eliminated.
  • total reflection of light at the interface between the support member and the fluorescent material can be substantially reduced, and the light extraction efficiency as the entire light emitting device can be improved.
  • employing the same materials for the support member and the base member enables to reduce the stress generated in the fluorescent material.
  • a YAG non-luminous, because an activator is not contained
  • a so-called YAG-based fluorescent material with cerium as the activator and a YAG as the base member can be used for the fluorescent material.
  • a method of manufacturing a light emitting device includes a step of preparing a light emitting element 10 (see FIG. 3A(a) ), a step of preparing a wavelength converting member 20 (see FIG. 3A(b) ), and a bonding step for bonding the light emitting element 10 and the wavelength converting member 20 (see FIGS. 3B and 3C ) .
  • the term "surface activated bonding technique” refers to that carrying out sputter etching by using ion beams or plasma on a bonding surface of a light emitting element 10 and a wavelength converting member 20 to activate both the surfaces to be bonded, then directly bond the light emitting element 10 and the wavelength converting member 20 at the bonding surfaces.
  • the light emitting element 10 and the wavelength converting member 20 can be firmly bonded. This is considered as the result of sputter etching, the first region 11a and the third region 20a are formed and the both absorb the strain between the light emitting element 10 and the wavelength converting member 20 in an integrated manner (see FIG. 2 ). The details are as described above and will not be repeated here.
  • a light emitting element is fabricated in such a manner that a column-shaped ingot of sapphire is thinly sliced to obtain disk-shaped wafers, and on each wafers, a plurality of semiconductor stacked layer portionas12 are formed and then divided into each of the light emitting elements.
  • the wavelength converting member 20 is bonded to each of the light emitting element 10, by using a surface activated bonding technique.
  • the use of the light emitting elements 10 which are already divided into single units has an advantage as described below (in the present specification, not only the state of individually divided unit but also the previous state of the wafer are also referred to a "light emitting element". That is, generally, the light emitting elements formed on a wafer have different properties such as the peak wavelength and/or optical output power depending on their locations on the wafer. However, such light emitting elements obtained by dividing the wafers can be grouped together by selecting the same or similar properties, and appropriate wavelength converting members 20 can be selected and bonded respectively thereto.
  • Examples of specific steps include arranging a plurality of light emitting elements having similar properties on a single adhesive sheet (first step), bonding each of the light emitting elements arranged on the adhesive sheet with a single sheet of a wavelength converting member by using a surface activated bonding technique (second step), removing the adhesive sheet (third step), and cutting the wavelength converting member as needed to obtain individual light emitting devices (fourth step).
  • Heating the light emitting element may result in deterioration of the electrodes and/or the light emitting layer, but a surface activated bonding technique is not necessarily heated.
  • the light emitting element 10 and the wavelength converting member 20 can be bonded without deteriorating the properties of the light emitting element.
  • the range of temperature to perform a surface activated bonding technique may be preferably 0° C. to 300° C., more preferably 0° C. to 200° C., further preferably 0° C. to 100° C., yet further preferably 0° C. to 50° C. With this arrangement, a firm bonding can be achieved without undermining the properties of the light emitting element.
  • the bonding surfaces of the light emitting element 10 and the wavelength converting member 20 may have a surface roughness (Ra) of 10 nm or less, more preferably 5 nm or less, and further preferably 1 nm or less. Accordingly, the light emitting element 10 and the wavelength converting member 20 can be easily and firmly bonded.
  • the wavelength converting member 20 is made of a fluorescent material, a support member (glass) and a bonding member (aluminum oxide), and the bonding member has, from the light emitting element side, a third region and a fourth region, and the third region has an irregular atomic arrangement compared with the fourth region.
  • Respective layers of nitride semiconductor were grown on a sapphire substrate 11 to form a semiconductor stacked layer portion 12.
  • An n-electrode 13 and a p-electrode 14 were formed on a part of a predetermined portion of the semiconductor stacked layer portion 12.
  • the sapphire substrate in a wafer state was ground to reduce the thickness to about 85 micrometers.
  • CMP Chemical Mechanical Polishing
  • scratch marks left by the polishing are removed and the surface was smoothed to an Ra of 1 nm or less.
  • the light emitting element in a wafer state obtained as described above was cut out by scrubbing to obtain individual light emitting elements 10.
  • each light emitting element 10 of 1 mm long and 1 mm wide in a plan view was formed.
  • Characterization such as voltage characteristic, wavelength, and leakage were carried out on each of the light emitting elements 10 and the light emitting elements 10 were sorted into groups on the basis of their characteristics.
  • the light emitting elements 10 of respective groups were arranged on a respective adhesive sheet at an interval of 200 micrometers with each other.
  • a wavelength converting member 20 formed by using an irreversible coagulation technique is prepared.
  • the wavelength converting member 20 of the present example was made of a sapphire (support member) containing YAG (fluorescent material).
  • the wavelength converting member 20 was ground and polished to a desired thickness.
  • polishing and CMP were carried out.
  • the sapphire portion becomes in a protruded shape and the YAG portion becomes a recesses shape, but in the present example, the difference in the height of the sapphire portion and the YAG portion is adjusted to 10 nm or less.
  • the surface roughness of the YAG and the sapphire at the bonding surface were respectively adjusted to the Ra of 2 nm or less.
  • the bonding chamber On the upper part of the bonding chamber, a plurality of the light emitting elements 10 were arranged on an adhesive sheet so that the sapphire substrates 11 which serve as the bonding surfaces locate to the underside. At the lower part of the bonding chamber, the wavelength converting member 20 was placed so that its bonding surface locates to the upper side.
  • the bonding chamber was vacuumed to 8.0 ⁇ 10 -6 Pa or less. Then, using two fast ion beam (FAB: fast atom beam) guns, Ar ion beam was irradiated respectively on the upper and lower samples. Ar beam was irradiated with a flow rate of 40 scm, an acceleration current of 100 mA, and for 180 seconds. Then, the upper and lower samples were bonded within a short time of 30 seconds or less. At this time, a pressure of 0.2 N/mm 2 or more was applied on the samples for 30 seconds. The bonded sample was taken out from the bonding chamber and the adhesive sheet was removed from the sample.
  • FAB fast atom beam
  • a plurality of the light emitting elements 10 arranged on a single sheet of the wavelength converting member 20 are divided by dicing to obtain individual units of the light emitting devices.
  • One of the light emitting device was mounted in a flip chip manner on a circuit board having electrodes and covered with a white resin made of titania particles dispersed in a silicone resin, except for the upper surface of the wavelength converting member 20 which serve as the light emitting surface.
  • the light emitting devices obtained in the present example were confirmed to have approximately twice as much improvement in the die shear strength (bonding strength) as compared to the devices of Comparative Example. Further, compared to comparative Example, an approximately 10% improvement in the luminous flux was confirmed.
  • the light emitting devices having substantially the same structure as in Example 1 were fabricated except that the sapphire substrate and the wavelength converting member were bonded by using an adhesive material made of a silicone resin.
  • the light emitting device can be used, for example, for lighting devices and display devices.
  • the invention may be embodied by the following exemplars:

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
EP19152171.5A 2010-04-08 2011-04-05 Verfahren zur herstellung eines lichtemittierenden bauelements Pending EP3509113A1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2010089267 2010-04-08
EP11765900.3A EP2557607B1 (de) 2010-04-08 2011-04-05 Lichtemittierende vorrichtung und herstellungsverfahren dafür
PCT/JP2011/058586 WO2011126000A1 (ja) 2010-04-08 2011-04-05 発光装置及びその製造方法

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EP11765900.3A Division EP2557607B1 (de) 2010-04-08 2011-04-05 Lichtemittierende vorrichtung und herstellungsverfahren dafür
EP11765900.3A Division-Into EP2557607B1 (de) 2010-04-08 2011-04-05 Lichtemittierende vorrichtung und herstellungsverfahren dafür

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EP (2) EP3509113A1 (de)
JP (1) JPWO2011126000A1 (de)
KR (3) KR102285141B1 (de)
CN (1) CN102823000B (de)
BR (1) BR112012025660B1 (de)
RU (1) RU2528604C2 (de)
TW (1) TWI521746B (de)
WO (1) WO2011126000A1 (de)

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US8916399B2 (en) * 2010-04-08 2014-12-23 Nichia Corporation Method of manufacturing light emitting device including light emitting element and wavelength converting member
JP2012142326A (ja) * 2010-12-28 2012-07-26 Mitsubishi Heavy Ind Ltd 発光素子及び発光素子の製造方法
DE102011014845B4 (de) * 2011-03-23 2023-05-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Licht emittierendes Halbleiterbauteil und Verfahren zur Herstellung eines Licht emittierenden Halbleiterbauteils
US20160027969A1 (en) 2013-01-16 2016-01-28 Koninklijke Philips N.V. Led using luminescent sapphire as down-converter
EP2979309A1 (de) * 2013-03-29 2016-02-03 Koninklijke Philips N.V. Lichtemittierende vorrichtung mit einem wellenlängenwandler
JP2014225636A (ja) * 2013-04-16 2014-12-04 株式会社ディスコ 発光デバイス
JP6414391B2 (ja) * 2013-04-30 2018-10-31 日亜化学工業株式会社 発光装置の製造方法
US9660154B2 (en) * 2013-05-20 2017-05-23 Koninklijke Philips N.V. Chip scale light emitting device package with dome
JP6299478B2 (ja) 2013-06-26 2018-03-28 日亜化学工業株式会社 発光装置およびその製造方法
CN104332539B (zh) * 2013-07-22 2017-10-24 中国科学院福建物质结构研究所 GaN基LED外延结构及其制造方法
JP6387780B2 (ja) 2013-10-28 2018-09-12 日亜化学工業株式会社 発光装置及びその製造方法
JP6438648B2 (ja) * 2013-11-15 2018-12-19 日亜化学工業株式会社 半導体発光装置およびその製造方法
WO2015104648A1 (en) * 2014-01-09 2015-07-16 Koninklijke Philips N.V. Light emitting device with reflective sidewall
JP6176171B2 (ja) 2014-03-28 2017-08-09 豊田合成株式会社 発光装置の製造方法
JP6398323B2 (ja) * 2014-05-25 2018-10-03 日亜化学工業株式会社 半導体発光素子の製造方法
EP2953176A1 (de) * 2014-06-02 2015-12-09 Swarovski Energy GmbH Beleuchtungsvorrichtung
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JP6743813B2 (ja) * 2015-05-15 2020-08-19 ソニー株式会社 蛍光体基板、光源装置および投射型表示装置
JP2017220652A (ja) * 2016-06-10 2017-12-14 大学共同利用機関法人自然科学研究機構 レーザ装置とその製造方法
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JP6245587B1 (ja) * 2016-10-28 2017-12-13 大学共同利用機関法人自然科学研究機構 レーザー部品
DE102017101091A1 (de) 2017-01-20 2018-07-26 Osram Gmbh Konverter, laser activated remote phosphor (larp) system, scheinwerfer und verfahren
JP6579141B2 (ja) 2017-03-24 2019-09-25 日亜化学工業株式会社 発光装置および発光装置の製造方法
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US10128419B1 (en) 2017-08-03 2018-11-13 Lumileds Llc Method of manufacturing a light emitting device
EP3582271B1 (de) * 2018-06-14 2021-03-17 Nichia Corporation Lichtemittierende vorrichtung und verfahren zur herstellung davon
JP7343749B2 (ja) * 2018-06-14 2023-09-13 日亜化学工業株式会社 発光装置とその製造方法
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CN113808925A (zh) * 2021-09-28 2021-12-17 包头稀土研发中心 一种复合结构荧光衬底、复合方法及倒装led结构

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11248656A (ja) * 1998-03-02 1999-09-17 Nec Corp 深さ方向組成分布分析方法
EP1191608A2 (de) * 2000-09-12 2002-03-27 LumiLeds Lighting U.S., LLC Lichtemittierende Dioden mit verbesserter Lichtauskoppelung
KR20060130394A (ko) * 2005-06-14 2006-12-19 삼성전기주식회사 형광체막 제조 방법, 이를 이용한 발광장치의 제조 방법 및발광장치
JP2006352085A (ja) 2005-03-14 2006-12-28 Philips Lumileds Lightng Co Llc 波長変換型半導体発光デバイス
EP1986217A1 (de) * 2006-02-16 2008-10-29 Shin-Etsu Chemical Co., Ltd. Verfahren zum herstellen eines halbleitersubstrats
EP1988575A2 (de) * 2007-03-26 2008-11-05 Semiconductor Energy Laboratory Co., Ltd. Halbleiterbauelement
JP2009289835A (ja) * 2008-05-27 2009-12-10 Panasonic Electric Works Co Ltd 構造体の製造方法、発光装置の製造方法
US20100019260A1 (en) * 2008-07-24 2010-01-28 Koninklijke Philips Electronics N.V. Semiconductor light emitting device including a window layer and a light-directing structure
EP2154709A2 (de) * 2008-08-11 2010-02-17 Sumitomo Electric Industries, Ltd. Verfahren zur Herstellung von schichtgebundenem Gruppe III-Nitridhalbleitersubstrat

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0810672B2 (ja) * 1987-07-03 1996-01-31 富士通株式会社 平板の接着方法
JPH11307813A (ja) 1998-04-03 1999-11-05 Hewlett Packard Co <Hp> 発光装置、その製造方法およびディスプレイ
JP2000340509A (ja) 1999-05-26 2000-12-08 Sumitomo Electric Ind Ltd ＧａＮ基板およびその製造方法
JP2002141559A (ja) * 2000-10-31 2002-05-17 Sanken Electric Co Ltd 発光半導体チップ組立体及び発光半導体リードフレーム
US7554258B2 (en) * 2002-10-22 2009-06-30 Osram Opto Semiconductors Gmbh Light source having an LED and a luminescence conversion body and method for producing the luminescence conversion body
CN1738781A (zh) 2003-01-20 2006-02-22 宇部兴产株式会社 用于光转化的陶瓷复合材料及其应用
JP3913700B2 (ja) 2003-04-08 2007-05-09 富士通メディアデバイス株式会社 弾性表面波デバイス及びその製造方法
RU2261502C1 (ru) * 2004-02-05 2005-09-27 Открытое акционерное общество "Научно-исследовательский институт ГИРИКОНД" Фотолюминесцентный излучатель, полупроводниковый фотоэлемент и оптрон на их основе
US7361938B2 (en) 2004-06-03 2008-04-22 Philips Lumileds Lighting Company Llc Luminescent ceramic for a light emitting device
CN100428511C (zh) * 2004-06-24 2008-10-22 宇部兴产株式会社 白色发光二极管器件
JP2006100787A (ja) 2004-08-31 2006-04-13 Toyoda Gosei Co Ltd 発光装置および発光素子
CN101032035A (zh) * 2004-09-28 2007-09-05 皇家飞利浦电子股份有限公司 具有改进转化层的发光器件
CN100521171C (zh) * 2004-10-21 2009-07-29 财团法人工业技术研究院 一种元件的封装接合结构
US8592858B2 (en) 2006-01-23 2013-11-26 Showa Denko K.K. Light-emitting diode and method for fabrication thereof
JP5021213B2 (ja) 2006-01-23 2012-09-05 昭和電工株式会社 発光ダイオード及びその製造方法
JP2009540558A (ja) 2006-06-08 2009-11-19 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 発光装置
CN100578826C (zh) 2006-08-09 2010-01-06 广东昭信光电科技有限公司 一种白色发光二极管芯片的制备方法
US7521862B2 (en) * 2006-11-20 2009-04-21 Philips Lumileds Lighting Co., Llc Light emitting device including luminescent ceramic and light-scattering material
US7687823B2 (en) * 2006-12-26 2010-03-30 Nichia Corporation Light-emitting apparatus and method of producing the same
JP5070557B2 (ja) 2007-02-27 2012-11-14 武仁 島津 常温接合方法
JP2009105123A (ja) 2007-10-22 2009-05-14 Showa Denko Kk 発光ダイオードおよびその製造方法
JP2009114953A (ja) 2007-11-06 2009-05-28 Nissan Motor Co Ltd 燃料噴射装置のマイクロノズルおよび燃料噴射装置のマイクロノズルの製造方法
KR101517644B1 (ko) 2007-11-29 2015-05-04 니치아 카가쿠 고교 가부시키가이샤 발광장치 및 그 제조방법
JP5315070B2 (ja) 2008-02-07 2013-10-16 昭和電工株式会社 化合物半導体発光ダイオード
EP2272102B1 (de) 2008-03-26 2016-06-22 Panasonic Intellectual Property Management Co., Ltd. Lichtemittierende halbleitervorrichtung
JP4911143B2 (ja) 2008-08-15 2012-04-04 信越化学工業株式会社 高温耐性接着剤組成物、基板の接着方法、及び３次元半導体装置
JP2010287687A (ja) * 2009-06-10 2010-12-24 Koito Mfg Co Ltd 発光モジュールおよび発光モジュールの製造方法
JP2009260391A (ja) * 2009-08-05 2009-11-05 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体層貼り合わせ基板および半導体デバイスの製造方法
JP2011109002A (ja) 2009-11-20 2011-06-02 Citizen Holdings Co Ltd 集積デバイスおよび集積デバイスの製造方法
US8916399B2 (en) * 2010-04-08 2014-12-23 Nichia Corporation Method of manufacturing light emitting device including light emitting element and wavelength converting member

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11248656A (ja) * 1998-03-02 1999-09-17 Nec Corp 深さ方向組成分布分析方法
EP1191608A2 (de) * 2000-09-12 2002-03-27 LumiLeds Lighting U.S., LLC Lichtemittierende Dioden mit verbesserter Lichtauskoppelung
JP2006352085A (ja) 2005-03-14 2006-12-28 Philips Lumileds Lightng Co Llc 波長変換型半導体発光デバイス
KR20060130394A (ko) * 2005-06-14 2006-12-19 삼성전기주식회사 형광체막 제조 방법, 이를 이용한 발광장치의 제조 방법 및발광장치
EP1986217A1 (de) * 2006-02-16 2008-10-29 Shin-Etsu Chemical Co., Ltd. Verfahren zum herstellen eines halbleitersubstrats
EP1988575A2 (de) * 2007-03-26 2008-11-05 Semiconductor Energy Laboratory Co., Ltd. Halbleiterbauelement
JP2009289835A (ja) * 2008-05-27 2009-12-10 Panasonic Electric Works Co Ltd 構造体の製造方法、発光装置の製造方法
US20100019260A1 (en) * 2008-07-24 2010-01-28 Koninklijke Philips Electronics N.V. Semiconductor light emitting device including a window layer and a light-directing structure
EP2154709A2 (de) * 2008-08-11 2010-02-17 Sumitomo Electric Industries, Ltd. Verfahren zur Herstellung von schichtgebundenem Gruppe III-Nitridhalbleitersubstrat

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
TAKAGI H ET AL: "Direct bonding of two crystal substrates at room temperature by Ar-beam surface activation", JOURNAL OF CRYSTAL GROWTH, ELSEVIER, AMSTERDAM, NL, vol. 292, no. 2, 1 July 2006 (2006-07-01), pages 429 - 432, XP028016470, ISSN: 0022-0248, [retrieved on 20060701], DOI: 10.1016/J.JCRYSGRO.2006.04.049 *

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