EP2978020A1 - Gehäusesubstrat - Google Patents

Gehäusesubstrat Download PDF

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Publication number
EP2978020A1
EP2978020A1 EP15174307.7A EP15174307A EP2978020A1 EP 2978020 A1 EP2978020 A1 EP 2978020A1 EP 15174307 A EP15174307 A EP 15174307A EP 2978020 A1 EP2978020 A1 EP 2978020A1
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EP
European Patent Office
Prior art keywords
package substrate
groove
redistribution structure
molding layer
redistribution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP15174307.7A
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English (en)
French (fr)
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EP2978020B1 (de
Inventor
Dyi-Chung Hu
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Individual
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Individual
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Publication of EP2978020B1 publication Critical patent/EP2978020B1/de
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/562—Protection against mechanical damage
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49822—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49833—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers the chip support structure consisting of a plurality of insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49894—Materials of the insulating layers or coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73201—Location after the connecting process on the same surface
    • H01L2224/73203—Bump and layer connectors
    • H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/13—Mountings, e.g. non-detachable insulating substrates characterised by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1515—Shape
    • H01L2924/15151—Shape the die mounting substrate comprising an aperture, e.g. for underfilling, outgassing, window type wire connections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1517—Multilayer substrate
    • H01L2924/15172—Fan-out arrangement of the internal vias
    • H01L2924/15174—Fan-out arrangement of the internal vias in different layers of the multilayer substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H01L2924/351—Thermal stress
    • H01L2924/3512—Cracking

Definitions

  • the present invention generally relates to a package substrate, and more specifically to a package substrate for a high density package.
  • FIG. 1 depicts a cross-sectional view showing an application of the package substrate.
  • the package substrate includes an interposer 212, a redistribution-layer structure 213, a build-up structure 24, a molding layer 22, and a semiconductor chip 27.
  • a redistribution structure 21 is composed of the interposer 212 and the redistribution-layer structure 213.
  • the interposer 212 is made of glass, silicon, ceramic, or polymer. As shown in FIG. 1 , the interposer 212 has a plurality of through-silicon vias (TSVs) 210 penetrating the bottom surface thereof.
  • TSVs through-silicon vias
  • the redistribution-layer structure 213 is formed on the top surface of the interposer 212.
  • the innermost circuit of the redistribution-layer structure 213 is electrically connected to the top ends of the TSVs 210, and the outer most circuit of the redistribution-layer structure 213 has a plurality of electrode pads 211.
  • the redistribution structure 21 is embedded in the molding layer 22.
  • the build-up structure 24 is formed on the bottom surface of the molding layer 22.
  • the build-up structure 24 has a plurality of conductive vias 242, a portion of which are electrically connected to the bottom ends of the TSVs 210 of the interposer 212.
  • the semiconductor chip 27 is a flip-chip electrically connected to the electrode pads 211 of the redistribution-layer structure 213 through solder bumps 271, and an underfill material 270 is used to fill the space between the electrode pads 211 and the semiconductor chip 27.
  • a plurality of solder balls 26 are mounted on bonding pads 243 on the bottom side of the build-up structure 24, for being electrically connected to another electronic device such as a printed circuit board (not shown in the figure).
  • the package substrate can overcome the dimension mismatch between the semiconductor chip 27 and the printed circuit board.
  • the semiconductor chip 27 with high-density or small-pitch conductive pads 272 can be disposed on the printed circuit board through the package substrate.
  • the interposer 212 serves as a CTE buffer between the semiconductor chip 27 and the printed circuit board. Therefore, during thermal cycling reliability testing procedure, uneven thermal stress caused in the package substrate may be reduced. This makes the structure of the package substrate more reliable.
  • An objective of the present invention is to provide a package substrate which can improve the problem of the redistribution structure cracking in the prior art.
  • the present invention provides a package substrate which includes:
  • the groove has a depth that is greater than the thickness of the redistribution structure.
  • the depth of the groove is smaller than the thickness of the molding layer.
  • the depth of the groove is greater than the thickness of the molding layer.
  • the groove has a width between 10 ⁇ m and 200 ⁇ m.
  • the groove has a width between 50 ⁇ m and 100 ⁇ m.
  • a portion of the molding layer can be further configured between the redistribution structure and the groove.
  • the groove abuts the redistribution structure.
  • the groove can be further filled with a filling material.
  • the filling material has a modulus that is less than the moduli of the materials of the inner walls of the groove.
  • the filling material can be an elastic material.
  • the filling material can be a low-modulus material such as silicone.
  • the portion of the molding layer has a width between 10 ⁇ m and 200 ⁇ m.
  • the portion of the molding layer has a width between 20 ⁇ m and 70 ⁇ m.
  • the distribution density of the top electrode pads of the redistribution structure is higher than that of the bottom electrode pads of the build-up structure.
  • the size and dimension of the top electrode pads of the redistribution structure are smaller than that of the bottom electrode pads of the build-up structure.
  • the redistribution structure contains a through-holed interposer and a redistribution-layer structure
  • the conductive portions are conductive through holes
  • the through-holed interposer has a first side and a second side opposite thereto and the conductive through holes penetrating the first side and the second side
  • each of the conductive through holes has a first end surface on the first side of the through-holed interposer and a second end surface on the second side of the through-holed interposer
  • the second side of the through-holed interposer and the second end surfaces of the conductive through holes are flush with the second surface of the molding layer
  • the redistribution-layer structure is disposed on the first side of the through-holed interposer and the first end surfaces of the conductive through holes and is electrically connected to the first end surfaces of the conductive through holes
  • an outermost layer of the redistribution-layer structure has the top electrode pads exposed from the first surface of the molding layer.
  • the redistribution structure is a core sheet
  • the core sheet includes a plurality of metal layers and a plurality of dielectric layers alternatively stacked
  • the conductive portions are electrode pads.
  • the dielectric layers of the core sheet can be made of an organic polymer.
  • the core sheet is a flexible sheet.
  • the material of the dielectric layers of the core sheet can be an inorganic substance such as glass, silicon or ceramics.
  • the top electrode pads of the redistribution structure are employed for connecting to at least one semiconductor chip.
  • the bottom electrode pads of the build-up structure are employed for connecting to a printed circuit board.
  • the present invention has obvious advantages and beneficial effects over the prior art.
  • the package substrate of the present invention according to the above technical scheme has at least the following advantages and beneficial effects.
  • an inner stress caused by a CTE difference between different materials in the package substrate is reduced by forming at least one groove which is arranged around the periphery of the redistribution structure, thereby overcoming the CTE mismatch between the redistribution structure, the molding layer, and the build-up structure, thus solving the problem of the redistribution structure cracking in the prior art.
  • FIG. 2 is a cross-sectional view of a package substrate 1 according to a first embodiment of the present invention.
  • FIG. 3 is a top view of the package substrate of FIG. 2 .
  • the package substrate 1 includes a molding layer 22, a build-up structure 24, and a redistribution structure 21.
  • the redistribution structure 21 contains a through-holed interposer 212 and a redistribution-layer structure 213.
  • the molding layer 22 has a first surface 22a and a second surface 22b opposite thereto.
  • the redistribution structure 21 is embedded in the molding layer 22 but the first surface 22a of the molding layer 22 exposes a part of the surface of the redistribution-layer structure 213.
  • the build-up structure 24 is formed on the second surface 22b of the molding layer 22.
  • the through-holed interposer 212 has a first side 21a and a second side 21b opposite thereto and a plurality of conductive through holes 210 penetrating the first side 21a and the second side 21b.
  • Each of the conductive through holes 210 has a first end surface 210a on the first side 21a of the through-holed interposer 212 and a second end surface 210b on the second side 21b of the through-holed interposer 212.
  • the second side 21b of the through-holed interposer 212 and the second end surfaces 210b of the conductive through holes 210 are flush with the second surface 22b of the molding layer 22.
  • the redistribution-layer structure 213 is disposed on the first side 21a of the through-holed interposer 212 and the first end surfaces 210a of the conductive through holes 210 and is electrically connected to the first end surfaces 210a of the conductive through holes 210.
  • the outermost layer of the redistribution-layer structure 213 has a plurality of top electrode pads 211 exposed from the first surface 22a of the molding layer 22.
  • the through-holed interposer 212 is made of glass, ceramic, single crystal silicon, or polysilicon and has a thickness of 100 ⁇ m.
  • the build-up structure 24 has a first side 24a and a second side 24b opposite thereto.
  • the build-up structure 24 has a wiring layer 241 formed at the first side 24a of the build-up structure 24 and a plurality of bottom electrode pads 243 formed at the second side 24b of the build-up structure 24.
  • the second end surfaces 210b of the conductive through holes 210 in the through-holed interposer 212 and the wiring layer 241 at the first side 24a of the build-up structure 24 are electrically connected to each other and are immersed in the package substrate 1.
  • the top electrode pads 211 at the outermost layer of the redistribution-layer structure 213 and the bottom electrode pads 243 at the second side 24b of the build-up structure 24 are exposed from the surfaces of the package substrate 1.
  • the distribution density of the top electrode pads 211 at the outermost layer of the redistribution-layer structure 213 is higher than that of the bottom electrode pads 243 at the second side 24b of the build-up structure 24.
  • the size and dimension of the top electrode pads 211 at the outermost layer of the redistribution-layer structure 213 are smaller than that of the bottom electrode pads 243 at the second side 24b of the build-up structure 24.
  • the top electrode pads 211 at the outermost layer of the redistribution-layer structure 213 are employed for connecting to at least one semiconductor chip (not shown in the figure).
  • the bottom electrode pads 243 at the second side 24b of the build-up structure 24 are employed for connecting to a printed circuit board (not shown in the figure).
  • the groove 220 is arranged around the periphery of the redistribution structure 21.
  • the groove 220 has a depth D that is greater than a thickness H of the redistribution structure 21 and greater than the thickness of the molding layer 22.
  • the groove 220 has a width W1 of 100 ⁇ m.
  • the groove 220 can be formed by an ultraviolet (UV) laser.
  • a residual molding portion 221 is disposed between the redistribution structure 21 and the groove 220, and is used for protecting the redistribution structure 21.
  • the material of the residual molding layer portion 221 is the same as the material of the molding layer 22.
  • the residual molding layer portion 221 has a width W2 of 50 ⁇ m.
  • the groove 220 can be further filled with a low-modulus material such as silicone (not shown in the figure).
  • FIGS. 4 and 5 are another form of the package substrate 1 of FIG. 2 .
  • a groove 220 is provided on a first surface 22a of a molding layer 22.
  • the groove 220 is arranged around the periphery of a redistribution structure 21 which contains a through-holed interposer 212 and a redistribution-layer structure 213.
  • the groove 220 abuts the redistribution structure 21.
  • FIG. 6 is a cross-sectional view of a package substrate 1 according to a second embodiment of the present invention.
  • FIG. 7 is a top view of the package substrate of FIG. 6 .
  • the package substrate 1 includes a core sheet (redistribution structure) 100, a build-up structure 200, and a molding layer 300.
  • the molding layer 300 has a first surface 304a and a second surface 304b. The first surface 304a and the second surface 304b are on opposite sides of the molding layer 300.
  • the core sheet 100 is embedded in the molding layer 300 with a surface exposed by the molding layer 300.
  • the build-up structure 200 is formed on the second surface 304b of the molding layer 300.
  • the core sheet 100 has a plurality of metal layers 101 and a plurality of dielectric layers 102 disposed therein.
  • the metal layers 101 and the dielectric layers 102 are alternatively formed by stacking one on top of another. Any two adjacent metal layers 101 can be electrically connected by a conductive via 103 formed therebetween.
  • the core sheet 100 actually consists of many dielectric layers.
  • the dielectric layers 102 of the core sheet 100 can be made of an organic polymer. Polyimide can be used as an illustrative example.
  • the material of the dielectric layers 102 of the core sheet 100 can be an inorganic substance as well.
  • the material of the dielectric layers 102 can be implemented by ceramic or glass, for example, Silicon Nitride, Silicon Oxide, and water glass. Other materials can be considered as well.
  • the core sheet 100 has two opposite sides, that is, a first side 104a and a second side 104b. Specifically, the core sheet 100 has a first surface 105a at the first side 104a and a second surface 105b at the second side 104b. There are a plurality of electrode pads 106a, 106b formed at the first side 104a and the second side 104b of the core sheet 100, preferably, formed beneath the first surface 105a and the second surface 105b. The electrode pads 106a, b of the core sheet 100 serve as electrical connecting points for electrically connecting the core sheet 100 to other electronic components. As shown in FIG.
  • the molding layer 300 exposes the first surface 105a of the core sheet 100, and the distribution density of the top electrode pads 106a formed at the first side 104a of the core sheet 100 is greater than that of the electrode pads 106b formed at the second side 104b.
  • the build-up structure 200 has a first side 204a and a second side 204b.
  • the first side 204a and the second side 204b are on opposite sides of the build-up structure 200.
  • the build-up structure 200 has a wiring layer 201 formed at the first side 204a, a plurality of bottom electrode pads 206 formed at the second side 204b, a plurality of conductive vias 203 disposed between the wiring layer 201 and the bottom electrode pads 206, and at least one dielectric layer 202.
  • the wiring layer 201 formed at the first side 204a and the bottom electrode pads 206 formed at the second side 204b are formed in the outermost layers of the build-up structure 200. As shown in FIG.
  • the wiring layer 201 formed at the first side 204a of the build-up structure 200 is electrically connected to the electrode pads 106b formed at the second side 104b of the core sheet 100.
  • the build-up structure 200 preferably has a protective insulating layer 207 such as a solder mask, formed on an outermost dielectric layer at the second side 204b of the build-up structure 200.
  • the protective insulating layer 207 has a plurality of openings 208, through which the bottom electrode pads 206 at the second side 204b are exposed, serving as electrical connecting points.
  • the build-up structure 200 may be employed with a multilayer structure having a plurality of metal layers and dielectric layers, and preferably, may have interconnections therebetween.
  • the distribution density of the top electrode pads 106a at the first side 104a of the core sheet 100 is higher than that of the bottom electrode pads 206 at the second side 204b of the build-up structure 200.
  • the size and dimension of the top electrode pads 106a at the first side 104a of the core sheet 100 are smaller than that of the bottom electrode pads 206 at the second side 204b of the build-up structure 200.
  • the top electrode pads 106a at the first side 104a of the core sheet 100 are employed for connecting to at least one semiconductor chip (not shown in the figure).
  • the bottom electrode pads 206 at the second side 204b of the build-up structure 200 are employed for connecting to a printed circuit board (not shown in the figure).
  • the groove 320 is arranged around the periphery of the core sheet 100.
  • the groove 320 has a depth D that is greater than a thickness H of the core sheet 100 and smaller than a thickness of the molding layer 300.
  • the groove 320 has a width W1 of 100 ⁇ m.
  • the groove 320 can be formed by an UV laser.
  • a residual molding portion 321 is disposed between the core sheet 100 and the groove 320, is used for protecting the core sheet 100.
  • the material of the residual molding portion 321 is the same as the material of the molding layer 300.
  • the residual molding portion 321 has a width W2 of 50 ⁇ m.
  • the groove 320 can be further filled with a low-modulus material such as silicone (not shown in the figure).
  • the groove 220, 320 in FIG. 3 or 7 can have various forms, e.g., refer to FIGS. 8 to FIG. 10 .
  • the groove 220, 320 may be formed of four independent section grooves arranged along four sides of the redistribution structure ( FIG. 8 ), or may be formed of or comprise a plurality of holes or rectangular grooves arranged along four sides of the redistribution structure.
  • the present invention is not limited thereto.
  • an inner stress caused by a CTE difference between different materials in the package substrate 1 is reduced by forming at least one groove 220, 320 which is arranged around the periphery of the redistribution structure 21, 100 onto the first surface 22a, 304a of the molding layer 22, 300, thereby overcoming the CTE mismatch between the redistribution structure 21, 100, the molding layer 22, 300, and the build-up structure 24, 200, thus solving the problem of the redistribution structure 21, 100 cracking in the prior art.

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
EP15174307.7A 2014-07-25 2015-06-29 Gehäusesubstrat Active EP2978020B1 (de)

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TW201620092A (zh) 2016-06-01
US10373918B2 (en) 2019-08-06
EP2978020B1 (de) 2020-10-14
TWI578458B (zh) 2017-04-11
CN204651304U (zh) 2015-09-16
US20160027712A1 (en) 2016-01-28
US9627285B2 (en) 2017-04-18
US20170162523A1 (en) 2017-06-08
JP2016032102A (ja) 2016-03-07

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