Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
  • H01G4/00—Fixed capacitors; Processes of their manufacture
  • H01G4/002—Details
  • H01G4/228—Terminals
  • H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
  • H01G4/2325—Terminals electrically connecting two or more layers of a stacked or rolled capacitor characterised by the material of the terminals
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
  • H01G4/00—Fixed capacitors; Processes of their manufacture
  • H01G4/002—Details
  • H01G4/018—Dielectrics
  • H01G4/06—Solid dielectrics
  • H01G4/08—Inorganic dielectrics
  • H01G4/12—Ceramic dielectrics
  • H01G4/1209—Ceramic dielectrics characterised by the ceramic dielectric material
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
  • H01G4/00—Fixed capacitors; Processes of their manufacture
  • H01G4/002—Details
  • H01G4/224—Housing; Encapsulation
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
  • H01G4/00—Fixed capacitors; Processes of their manufacture
  • H01G4/002—Details
  • H01G4/228—Terminals
  • H01G4/232—Terminals electrically connecting two or more layers of a stacked or rolled capacitor
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
  • H01G4/00—Fixed capacitors; Processes of their manufacture
  • H01G4/30—Stacked capacitors

Definitions

• Capacitors in high power applications such as AC / DC or DC / DC converters, require high levels of power
• Capacitor region comprising dielectric layers and arranged between the layers inner electrodes, wherein the heating element and the capacitor region are thermally conductively connected to each other, for example, to operate the capacitor at a temperature at which the
• Power density is as high as possible.
• At least one object of certain embodiments is to provide a capacitor arrangement with at least one ceramic multilayer capacitor.
• Capacitor assembly a ceramic multilayer capacitor and a contact arrangement through which the
• Multilayer capacitor is electrically contacted.
• the capacitor arrangement can be used, for example, as
• the ceramic multilayer capacitor has a main body.
• the base body has a cuboid shape.
• the main body comprises dielectric layers that run along one
• Layer stacking direction are arranged to form a stack.
• the dielectric layers are preferably formed as ceramic layers.
• the base body comprises first and second electrode layers, which are arranged between the ceramic layers.
• a first and a second electrode layer may be arranged in a same layer plane spaced from each other.
• the first and second electrode layers may be arranged in a same layer plane spaced from each other.
• Electrode layers may be arranged in each case in different layer planes of the stack.
• the base body comprises a first external contact.
• the external contact is preferably arranged on a first side surface of the main body and electrically conductively connected to the first electrode layers.
• the first electrode layers Preferably, the first
• Electrode layers are directly adjacent to the first
• the first electrode layers preferably extend to the first side surface.
• the main body has a second
• External contact which is arranged on a first side surface opposite the second side surface of the base body and is electrically conductively connected to the second electrode layers.
• the second electrode layers are directly electrically conductively connected to the second external contact, that is, the first electrode layers are directly adjacent to the first
• the second electrode layers preferably extend to the second side surface.
• Multilayer capacitor is arranged, wherein the first and the second external contact in each case with one of
• the metallic contact plates is electrically connected.
• the metallic contact plates are not part of the ceramic multilayer capacitor. Rather, one or more sintered and with external contacts
• the metallic contact plates comprise copper.
• the metallic contact plates comprise copper.
• the metallic lattices may in particular be copper lattices.
• the copper grids which may be designed in particular as fine-meshed copper grids, may preferably serve as compensation layers between the sputtered capacitor parts, that is to say the external contacts, and the metallic contact plates. This may be advantageous, for example, if the at least one ceramic
• Capacitor assembly further comprises at least two housing parts, between which the contact arrangement and the ceramic multilayer capacitor are arranged.
• the housing parts may for example be formed from a ceramic or a plastic and for the protection and / or encapsulation of the at least one ceramic multilayer capacitor
• Housing parts and at least one screw wherein the housing parts press by means of the screw, the contact plates to the outer contacts.
• the Housing parts in an assembled form have a parallelepiped shape, wherein the capacitor arrangement two
• the metallic contact plates can be soldered to the outer contacts of the at least one ceramic multilayer capacitor.
• a standard solder or preferably also a solder which has nanosilver.
• nano silver is a silver powder with a middle
• the metallic contact plates can in particular to the outer contacts of the at least one ceramic
• the Klemm. réelle and the LotCountierung can be provided with metallic lattices and without metallic grid between the outer contacts and the contact plates. According to a further embodiment, the
• Capacitor assembly a plurality of ceramic
• Capacitor assembly required capacity the more items are combined. In other words, depending on the required capacity of the capacitor arrangement a desired number of ceramic
• the individual ceramic multilayer capacitors may have, for example, a standardized size.
• Width B up B denotes the spatial extent of the main body of the multilayer capacitor along the
• the base body has a height H perpendicular to the first side surface.
• the height H can thus be considered a spatial extension of the body
• the height H is also perpendicular to the second side surface of the base body. Furthermore, the main body perpendicular to the height H and perpendicular to
• L / B > 1, preferably L / B ⁇ 5, more preferably L / B ⁇ 3.5.
• Multilayer capacitor approximately with a capacitance between
• the main body has third electrode layers which are not electrically conductive with either the first or the second external contact
• the third electrode layers are connected.
• the third electrode layers with no external contact electrically connected.
• the third electrode layers can be referred to here and below as free electrodes ("floating electrodes").
• the third electrode layers overlap with the first electrode layers.
• the third electrode layers each have at least one subregion, which could be brought into coincidence with at least one subregion of the first electrode layers in the case of a mental projection in the layer stacking direction of the stack.
• first and a second electrode layer may be arranged in a same layer plane of the base body spaced from each other and each overlap with at least one third electrode, which is arranged in a further layer plane.
• Electrode layers that is, the use of internal serial electrodes, advantageously causes an increase in the breakdown field strength, which is conducive to the robustness and reliability of the multilayer capacitor. Furthermore, this allows a reduction in the dielectric layer thickness, that is to say the layer thickness of the ceramic layers, as a result of which an increase in the cross-section of an electrode layer per volume of ceramic and thus an improvement in the ESR value and a
• the ceramic layers have a layer thickness between 3 ⁇ m and 200 ⁇ m. According to a further preferred embodiment, the ceramic layers have a layer thickness between 10 ym and 100 ym. Particularly preferred are the ceramic
• Layers have a layer thickness of approximately 25 ym.
• the electrode layers have a layer thickness between 0.1 .mu.m and 10 .mu.m. According to a preferred embodiment, the
• Electrode layers have a layer thickness between 1 ym and 4 ym. Particularly preferably, the electrode layers have a layer thickness of approximately 3.5 ⁇ m.
• the base body has at least ten ceramic layers. According to a further embodiment, the base body has at least ten first electrode layers. According to a further embodiment, the base body has at least ten second ones
• the following relationship applies to the number of first electrode layers provided in the main body and the width B of the main body: ratio of the number of first electrode layers to the width
• the base body has at least ten first electrode layers per mm width.
• the main body preferably has at least ten second electrode layers per mm width.
• Electrode layers on a base metal Preferably, the electrode layers comprise copper. According to one preferred embodiment, the electrode layers consist of copper. Especially after the sintering of the
• the electrode layers may consist of pure copper. Due to the high thermal and electrical conductivity of copper, a particularly low ESR value can be achieved in the multilayer capacitor described here. Furthermore, by the use of base metals advantageously the manufacturing process of the multilayer capacitor can be cheapened.
• first and second side surfaces, on which the outer contacts are applied are surface-treated.
• first and second side surfaces may be lapped.
• a particularly good contact between the outer contacts and the first and second electrode layers can be achieved.
• a particularly good contact between the outer contacts and the first and second electrode layers can be achieved.
• Electrode layers process technology can be safely brought to the surface of the body.
• the outer contacts can then without Einbrand a gas flow, for example, with a standard
• the first and the second external contact each have at least a first Sputter für, wherein the first sputtering layers are in direct contact with the first or second electrode layers.
• the first and the second external contact each have at least a first Sputter für, wherein the first sputtering layers are in direct contact with the first or second electrode layers.
• the first sputtering layers are in direct contact with the first or second electrode layers.
• Electrode layers from the body is.
• a first layer may be applied, which in direct contact with
• the sputter layers may have, for example, a layer thickness between 0.1 ⁇ m and 1.5 ⁇ m.
• the first layers comprise chromium or consist of chromium.
• the first and the second external contact each have a second sputtering layer, wherein the second layers are preferably applied directly to the first layers.
• the second layers preferably comprise copper or nickel or consist of copper or nickel.
• the first and the second external contact each have a third sputtering layer, wherein the third sputtered layers are preferably applied directly to the second sputtering layers.
• the third sputter layers are preferably gold or gold.
• the third sputter layers are preferably gold or gold.
• Sputter layers also have silver or consist of silver.
• the external contacts can have, for example, sputtered layers with a Cr / Cu / Au or a Cr / Cu / Ag or a Cr / Ni / Ag or a Cr / Ni / Ag, wherein the sputter layer stacks are in direct contact with the first and second electrode layers, respectively.
• the ceramic layers comprise a ceramic material, for which the following formula applies:
• a particularly Zr-rich PZT mixed crystal phase is selected from the phase diagram.
• the condition b + d + e + f> 0 determines that in the ceramic material in addition to a dopant from the
• Metals such as silver or copper, possible. Also owns the ceramic material compared to the only doped by group A PZT material, a higher switching field strength and / or higher relative permittivity (dielectric constant). In addition, low sintering temperatures favor the formation of small grain sizes of the ceramic material, which causes the
• Dielectric properties favorably influenced. More specifically, the dielectric properties of PZT ceramics are generally also determined by the domain size. By domains one understands areas in the ceramic with same
• the domain size is dependent on the grain size. The number of domains per grain increases
• the doped lead zirconate titanate ceramic has a perovskite lattice, which can be described by the general formula ABO 3 , where A stands for the A-sites and B for the B-sites of the perovskite lattice.
• A stands for the A-sites
• B for the B-sites of the perovskite lattice.
• the perovskite lattice is characterized by a high tolerance
• the perovskite structure of lead zirconate titanate (PZT) can be described by the general formula ABO 3 .
• Element cell of the PZT crystal lattice can be described by a cube.
• the A-sites are by Pb 2+ ions
• a 0 2 " ion is placed in the middle of each cube area, with a Ti 4+ ion and a Zr 4+ ion (B sites) in the center of the cube Substitution of metal ions by other metal ions and defects, which is why they can be well doped.
• the highly symmetrical coordination polyhedron may be distorted. This distortion can change the center of symmetry of the crystal and thus affect the polarizability.
• the various possibilities of doping can be classified by the valence of the doping ion.
• the isovalent doping, ie the replacement of an ion by another ion of equal valence, does not affect any vacancies in the ceramic material.
• Cation lattice The doping with acceptors and donors leads in each case to characteristic changes in the material properties. Acceptor doped ceramics are also referred to as "hard”, donor doped ceramics as “soft” ceramics. A doping, for example with Nd 3+ (or another
• Rare earth element from group A on the A sites represents a donor doping. Due to the ionic radius of neodymium, this is incorporated on the Pb 2+ sites.
• a doping for example, with K + or Fe 3+ , on the A and B sites, respectively, represents an acceptor doping. Due to the ionic radius of potassium, this is incorporated on the Pb 2+ sites, while Fe 3+ is incorporated on the Pb 2+ sites Zr 4+ or Ti 4+ sites
• the charge equalization is carried out by
• Doping is dependent. Small amounts of doping contribute to grain growth, whereas excessive amounts of doping ions can inhibit grain growth.
• 0.1 -S x -S 0.2 since in this range the polarization curves better
• B is
• the material properties are influenced particularly advantageous, in particular the
• the relative permittivity at an electric field strength of 1 kV / mm, preferably 2 kV / mm, is at least 60% of the relative permittivity at an electric field strength of 0 kV / mm. More preferably, the relative permittivity
• the measurements are preferably carried out at a temperature of the ceramic material of 125 ° C.
• the ceramic material has a relative permittivity of at least 500, preferably at least 1500, at an electric field strength of 1 kV / mm, preferably 2 kV / mm
• the ceramic material has an electric field strength of 2 to 5 kV / mm, preferably 1 kV / mm to 10 kV / mm, a relative permittivity of at least 500, preferably at least 1500.
• the measurements are preferably at a temperature of the ceramic material of 125 ° C performed.
• the measurement of the polarization hysteresis is a
• Hysteresis loop is measured point by point.
• polarization measurements can be carried out using the TF Analyzer 2000 from aixACCT Systems GmbH.
• the ceramic material is an antiferroelectric dielectric.
• the base material PZT is preferably used from the antiferroelectric-orthorhombic phase region (O-phase).
• the antiferroelectric order is characterized by an overlay of several polar sublattices whose electric dipole moments cancel each other out. An antiferroelectric crystal thus has no spontaneous polarization, but special dielectric
• Antiferroelectric on it behaves initially as a linear dielectric. From a certain critical
• Double hysteresis loop Double hysteresis loop.
• Antiferroelectric ceramic materials have less pronounced polarization field strength hysteresis compared to ferroelectric ceramic materials. This leads to lower energy losses when used in capacitors. For this reason, the use of
• antiferroelectric ceramic materials are preferred.
• the ceramic precursors (precursor) transferred become.
• spray-drying and spray-freezing granulation with subsequent freeze-drying are available.
• the precursors are then pyrolyzed to the oxides. Powders prepared in this way can be deagglomerated with little effort and conditioned for further processing.
• the structure conveys an improved possibility of process control via the relatively short electrode layers in the lateral direction, as a result of which, as a consequence, also in terms of volume, relative to conventional multilayer capacitors, large
• Ceramic parts are possible. Furthermore, in the case of a capacitor arrangement described here, synergy effects arise from the described arrangement of the electrode layers and the selected ceramic material of the ceramic layers and the structure of the contact arrangement, which have a positive effect on the ESR value, the ESL value and the mechanical and thermal properties
• Electrodes can take (geometry effect) together with the thermal stability of the insulation resistance
• Capacitor arrangement can be created, which had a capacity of 30.5 ⁇ at 350 V. Furthermore, the
• Capacitor arrangement according to the invention an ESR of 0.5 mQ, which corresponds to a product of ESR and capacity of about 15 ⁇ . Furthermore, an ESL of 10 nH, a net power density derived of 5.5 ⁇ / cm 3 , a
• Loss angle of 0.5% Compared with the characteristics of other technologies such as film capacitors, aluminum capacitors and conventional multilayer capacitors show that previously unattained capacitor values are possible with the capacitor arrangement described here.
• Capacitance values are needed to compensate for ripple voltages. Smaller capacity values do the same
• capacitor arrangement can be realized significantly more cost-effectively with the same function compared to conventional technologies.
• Figure 1 is a schematic representation of a
• Figure 2 is a schematic representation of a ceramic
• FIGS 3 to 7 are schematic representations of
• identical, identical or identically acting elements can each be provided with the same reference numerals.
• the illustrated elements and their proportions with each other are not to be regarded as true to scale, but rather individual elements, such as layers, components, components and areas may be exaggerated in size for ease of illustration and / or understanding.
• FIG. 1 shows a capacitor arrangement 10 according to FIG.
• the capacitor arrangement 10 has a ceramic multilayer capacitor 1 in a contact arrangement 7.
• the multilayer capacitor 1 comprises a main body 2, which has a cuboid shape with six side surfaces.
• the base body 2 has ceramic layers 3 and first and second arranged between the ceramic layers 3
• Layers 3 and the electrode layers 41, 42 are arranged along a layer stacking direction S to form a stack.
• the main body 2 has at least 10 first and at least 10 second electrode layers 41, 42.
• the ceramic layers 3 are shown in FIG.
• Embodiment a layer thickness of about 25 ⁇ .
• the electrode layers 41, 42 have a layer thickness of about 3.5 ⁇ .
• the ceramic layers 3 and the electrode layers 41, 42 may also have different layer thicknesses.
• the electrode layers are shown in the figure
• Embodiment copper on As a result, it can be achieved, on the one hand, that the multilayer capacitor 1 has the smallest possible ESR value, and, on the other hand, the manufacturing process of the multilayer capacitor 1 can be made cheaper.
• the multilayer capacitor 1 also has a first one
• External contact 52 which is arranged on an opposite second side surface 62 of the base body 2, on.
• the first electrode layers 41 are electrically conductively connected to the first external contact 51 and the second electrode layers 42 are electrically conductively connected to the second external contact 52.
• Side surfaces 61, 62 are surface-treated, wherein the surface treatment is preferably carried out prior to the application of the external contacts 51, 52.
• the first and second side surfaces 61, 62 may preferably be lapped or alternatively also be scrubbed, ground or plasma etched.
• a first and a second electrode layer 41, 42 are arranged at a distance from one another in a same plane.
• This plane is formed by a layer plane that is perpendicular to
• Layer stacking direction S of the stack is formed. Between the first electrode layers 41 and the second
• Electrode layers 42 is a so-called gap, that is to say a gap.
• This gap represents a region between a first electrode layer 41 and a second electrode layer 42 in the layer plane, in which no electrode layers are arranged.
• the first and second electrode layers 41, 42 are each arranged in different layer planes.
• the main body 2 also has third electrode layers 43 which are not connected to either the first or the second
• the third electrode layers 43 overlap both with the first and with the second electrode layers 41, 42, that is, the third electrode layers 43 each have at least a partial area, which in a mental projection in the stacking direction S of the stack with
• both the first and the second electrode layers 41, 42 could be made to coincide.
• the first and second electrode layers 41, 42 are respectively disposed in different layer planes, it is possible that the first and second electrode layers 41, 42 overlap with each other.
• the first and second outer contacts 51, 52 each have a multilayer sputtered layer, which is applied directly to the base body 2.
• the external contacts in the embodiment shown are each by a Cr / Cu / Au or Cr / Cu / Ag or Cr / Ni / Au or
• the contact arrangement 7 has two metallic contact plates 70, between which the ceramic multilayer capacitor 1 is arranged.
• the outer contacts 51, 52 are each electrically conductively connected to one of the metallic contact plates 70.
• the electrical contact is in the embodiment of Figure 1 by a direct
• External contacts 51, 52 produced. Other types of electrical contact between the external contacts 51, 52 and the contact plates 70 are described in connection with the embodiments of Figures 3 to 6.
• the metallic contact plates have in particular copper, particularly preferably passivated copper with Ag and / or Au.
• Electrode layers and the ceramic layers is increased, in the contact arrangement 10 shown here, a plurality of ceramic multilayer capacitors 1 between the metallic contact plates 70 of the contact arrangement 7 can be arranged. This does not require the
• ceramic multilayer capacitor 1 itself to increase, thereby reducing processing risks and also in the
• FIG. 2 shows an exemplary embodiment of a ceramic multilayer capacitor which has a structure like the multilayer capacitor 1 described in connection with FIG. 1 in conjunction with an advantageous geometric design
• Embodiment has.
• the main body 2 of the ceramic multilayer capacitor 1 has a width B along the layer stacking direction S.
• B denotes the extent of the
• Base body 2 in the direction parallel to the layer stacking direction S.
• at least 10 first electrode layers and at least 10 second electrode layers are provided in the base body 2 per mm width B of the main body.
• main body 2 is perpendicular to the first
• the main body 2 thus has perpendicular to the first side surface 51 an extent corresponding to the height H. Furthermore, the main body 2 is perpendicular to the height H and perpendicular to
• Layer stacking direction S on a length L which corresponds to the extension of the base body 2 perpendicular to the layer stacking direction and perpendicular to the height H.
• the base body 2 has a width B of approximately 2.5 mm, a height H of approximately 7.0 mm and a length L of approximately 7.0 mm. So that's it
• the ratio L / B is about 2.8 and the ratio L / H is about 1.0.
• the multilayer capacitor 1 according to the one shown
• Embodiment is characterized in particular by a low ESR value, a low ESL value and a high mechanical and thermal robustness.
• Multilayer capacitor 1 can be produced inexpensively.
• the ceramic multilayer capacitors 1 described in conjunction with FIGS. 1 and 2 may in particular comprise a ceramic material described above in the general part, in particular an antiferroelectric dielectric,
• FIG. 3 shows a capacitor arrangement 11 according to a further embodiment, in which the
• Multilayer capacitor 1 facing side of each of
• metallic contact plates 70 has a metallic grid 71 in the form of a copper grid. Such, preferably fine-meshed copper grid can serve as a leveling layer between the sputtered outer contacts 51, 52 and the metallic contact plates 70.
• Multilayer capacitor 1 is metallic
• Contact plates 70 of the contact assembly 7 connected.
• a solder layer with nanosilver that is to say silver powder having an average particle size of less than 1 ⁇ m and more than 50 nm
• FIG. 4 shows a capacitor arrangement 12 according to a further exemplary embodiment, in which between the metallic contact plates 70 of the contact arrangement 7 and the outer contacts 51, 52 of the ceramic Multilayer capacitor 1 only a solder layer 72, as described for example in connection with Figure 3, is arranged without an additional metallic grid. Furthermore, the capacitor arrangement 12 has two housing parts 73, between which the contact arrangement 7 and the
• the housing parts 73 may, for example, comprise or consist of a plastic and / or a ceramic material.
• Figures 5 and 6 are fragmentary
• Housing 73 together with at least one screw 74 form a clamping arrangement, so that the housing parts 73 press the contact plates 70 by means of at least one screw 74 to the outer contacts of the ceramic multilayer capacitor 1.
• the housing parts 73 press the contact plates 70 by means of at least one screw 74 to the outer contacts of the ceramic multilayer capacitor 1.
• Capacitor arrangements are created, which have a low ESL and ESR at the same time high mechanical and
• the contact assembly 7 may be formed without metallic grid 71.
• a capacitor arrangement 15 according to a further exemplary embodiment is in a three-dimensional form
• the two superimposed clamped layers of ceramic multilayer capacitors for increasing the absolute value of the capacitance in a housing having two housing parts 73.
• the ceramic multilayer capacitors can be electrically contacted inside the housing, the structure of the
• Embodiments may be formed.
• the housing parts 73 are each half-shell-shaped and have joined together a cuboid shape.
• the housing parts 73 are screws 74 in corresponding receptacles of the housing parts 73rd

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• Microelectronics & Electronic Packaging (AREA)
• Ceramic Engineering (AREA)
• Chemical & Material Sciences (AREA)
• Inorganic Chemistry (AREA)
• Ceramic Capacitors (AREA)
• Fixed Capacitors And Capacitor Manufacturing Machines (AREA)

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• 2013
  • 2013-03-07 DE DE102013102278.2A patent/DE102013102278A1/de active Pending
• 2014
  • 2014-02-10 WO PCT/EP2014/052545 patent/WO2014135340A1/de active Application Filing
  • 2014-02-10 EP EP14703833.5A patent/EP2965330A1/de not_active Withdrawn
  • 2014-02-10 CN CN201810729413.1A patent/CN108922780A/zh active Pending
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