EP2831917A4 - OXIDE-NITRIDE-OXIDE STACK WITH MULTIPLE OXYNITRIDE LAYERS - Google Patents
OXIDE-NITRIDE-OXIDE STACK WITH MULTIPLE OXYNITRIDE LAYERSInfo
- Publication number
- EP2831917A4 EP2831917A4 EP13767422.2A EP13767422A EP2831917A4 EP 2831917 A4 EP2831917 A4 EP 2831917A4 EP 13767422 A EP13767422 A EP 13767422A EP 2831917 A4 EP2831917 A4 EP 2831917A4
- Authority
- EP
- European Patent Office
- Prior art keywords
- oxide
- nitride
- oxynitride layers
- stack
- multiple oxynitride
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0676—Nanowires or nanotubes oriented perpendicular or at an angle to a substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40117—Multistep manufacturing processes for data storage electrodes the electrodes comprising a charge-trapping insulator
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
- H01L29/42348—Gate electrodes for transistors with charge trapping gate insulator with trapping site formed by at least two separated sites, e.g. multi-particles trapping site
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/518—Insulating materials associated therewith the insulating material containing nitrogen, e.g. nitride, oxynitride, nitrogen-doped material
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66439—Unipolar field-effect transistors with a one- or zero-dimensional channel, e.g. quantum wire FET, in-plane gate transistor [IPG], single electron transistor [SET], striped channel transistor, Coulomb blockade transistor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
- H01L29/7926—Vertical transistors, i.e. transistors having source and drain not in the same horizontal plane
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
- H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
- H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Nanotechnology (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Theoretical Computer Science (AREA)
- Mathematical Physics (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Formation Of Insulating Films (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP18213095.5A EP3537483A3 (en) | 2012-03-31 | 2013-03-15 | Oxide-nitride-oxide stack having multiple oxynitride layers |
EP20167516.2A EP3709370A1 (en) | 2012-03-31 | 2013-03-15 | Oxide-nitride-oxide stack having multiple oxynitride layers |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/436,872 US9449831B2 (en) | 2007-05-25 | 2012-03-31 | Oxide-nitride-oxide stack having multiple oxynitride layers |
PCT/US2013/032339 WO2013148343A1 (en) | 2012-03-31 | 2013-03-15 | Oxide-nitride-oxide stack having multiple oxynitride layers |
Related Child Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP20167516.2A Division EP3709370A1 (en) | 2012-03-31 | 2013-03-15 | Oxide-nitride-oxide stack having multiple oxynitride layers |
EP18213095.5A Division EP3537483A3 (en) | 2012-03-31 | 2013-03-15 | Oxide-nitride-oxide stack having multiple oxynitride layers |
Publications (2)
Publication Number | Publication Date |
---|---|
EP2831917A1 EP2831917A1 (en) | 2015-02-04 |
EP2831917A4 true EP2831917A4 (en) | 2015-11-04 |
Family
ID=49261089
Family Applications (3)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP18213095.5A Withdrawn EP3537483A3 (en) | 2012-03-31 | 2013-03-15 | Oxide-nitride-oxide stack having multiple oxynitride layers |
EP13767422.2A Ceased EP2831917A4 (en) | 2012-03-31 | 2013-03-15 | OXIDE-NITRIDE-OXIDE STACK WITH MULTIPLE OXYNITRIDE LAYERS |
EP20167516.2A Pending EP3709370A1 (en) | 2012-03-31 | 2013-03-15 | Oxide-nitride-oxide stack having multiple oxynitride layers |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP18213095.5A Withdrawn EP3537483A3 (en) | 2012-03-31 | 2013-03-15 | Oxide-nitride-oxide stack having multiple oxynitride layers |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP20167516.2A Pending EP3709370A1 (en) | 2012-03-31 | 2013-03-15 | Oxide-nitride-oxide stack having multiple oxynitride layers |
Country Status (6)
Country | Link |
---|---|
EP (3) | EP3537483A3 (zh) |
JP (2) | JP6709051B2 (zh) |
KR (2) | KR102220842B1 (zh) |
CN (2) | CN104321878A (zh) |
TW (2) | TWI584450B (zh) |
WO (1) | WO2013148343A1 (zh) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8940645B2 (en) | 2007-05-25 | 2015-01-27 | Cypress Semiconductor Corporation | Radical oxidation process for fabricating a nonvolatile charge trap memory device |
US20090179253A1 (en) | 2007-05-25 | 2009-07-16 | Cypress Semiconductor Corporation | Oxide-nitride-oxide stack having multiple oxynitride layers |
US8633537B2 (en) | 2007-05-25 | 2014-01-21 | Cypress Semiconductor Corporation | Memory transistor with multiple charge storing layers and a high work function gate electrode |
US9449831B2 (en) | 2007-05-25 | 2016-09-20 | Cypress Semiconductor Corporation | Oxide-nitride-oxide stack having multiple oxynitride layers |
EP3534408A1 (en) * | 2012-03-27 | 2019-09-04 | Cypress Semiconductor Corporation | Sonos stack with split nitride memory layer |
EP3537483A3 (en) * | 2012-03-31 | 2019-10-02 | Longitude Flash Memory Solutions Ltd. | Oxide-nitride-oxide stack having multiple oxynitride layers |
JP6306233B1 (ja) * | 2017-02-28 | 2018-04-04 | ウィンボンド エレクトロニクス コーポレーション | フラッシュメモリおよびその製造方法 |
WO2019027604A1 (en) * | 2017-08-01 | 2019-02-07 | Illumina, Inc. | FIELD EFFECT SENSORS |
WO2023010564A1 (en) * | 2021-08-06 | 2023-02-09 | Innoscience (Suzhou) Technology Co., Ltd. | Semiconductor device and method for manufacturing thereof |
CN114038918A (zh) * | 2021-11-08 | 2022-02-11 | 珠海创飞芯科技有限公司 | 一种存储单元、存储单元的制作方法以及存储器 |
Citations (4)
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US8222688B1 (en) * | 2009-04-24 | 2012-07-17 | Cypress Semiconductor Corporation | SONOS stack with split nitride memory layer |
WO2013148112A1 (en) * | 2012-03-27 | 2013-10-03 | Cypress Semiconductor Corporation | Sonos stack with split nitride memory layer |
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TWI534897B (zh) | 2011-01-14 | 2016-05-21 | 賽普拉斯半導體公司 | 具有多重氮氧化物層之氧化物-氮化物-氧化物堆疊 |
KR20110093746A (ko) * | 2011-07-01 | 2011-08-18 | 고려대학교 산학협력단 | 멀티 펑션 4 비트/1 셀 비휘발성 퓨전 메모리 소자 및 그의 제조 방법 |
EP3537483A3 (en) * | 2012-03-31 | 2019-10-02 | Longitude Flash Memory Solutions Ltd. | Oxide-nitride-oxide stack having multiple oxynitride layers |
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2013
- 2013-03-15 EP EP18213095.5A patent/EP3537483A3/en not_active Withdrawn
- 2013-03-15 CN CN201380016893.2A patent/CN104321878A/zh active Pending
- 2013-03-15 EP EP13767422.2A patent/EP2831917A4/en not_active Ceased
- 2013-03-15 WO PCT/US2013/032339 patent/WO2013148343A1/en active Application Filing
- 2013-03-15 KR KR1020207005846A patent/KR102220842B1/ko active IP Right Grant
- 2013-03-15 CN CN202010010002.4A patent/CN111180525B/zh active Active
- 2013-03-15 JP JP2015503338A patent/JP6709051B2/ja active Active
- 2013-03-15 KR KR1020147025059A patent/KR102085388B1/ko active IP Right Grant
- 2013-03-15 EP EP20167516.2A patent/EP3709370A1/en active Pending
- 2013-03-22 TW TW102110223A patent/TWI584450B/zh active
- 2013-03-22 TW TW106107213A patent/TWI615948B/zh active
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2020
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US20080054346A1 (en) * | 2006-09-01 | 2008-03-06 | Kabushiki Kaisha Toshiba | Semiconductor device |
US20110248332A1 (en) * | 2007-05-25 | 2011-10-13 | Sagy Levy | Oxide-Nitride-Oxide Stack Having Multiple Oxynitride Layers |
US8222688B1 (en) * | 2009-04-24 | 2012-07-17 | Cypress Semiconductor Corporation | SONOS stack with split nitride memory layer |
WO2013148112A1 (en) * | 2012-03-27 | 2013-10-03 | Cypress Semiconductor Corporation | Sonos stack with split nitride memory layer |
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Also Published As
Publication number | Publication date |
---|---|
TW201347151A (zh) | 2013-11-16 |
JP6709051B2 (ja) | 2020-06-10 |
KR102085388B1 (ko) | 2020-03-05 |
JP2015516678A (ja) | 2015-06-11 |
TW201724474A (zh) | 2017-07-01 |
KR102220842B1 (ko) | 2021-03-02 |
TWI584450B (zh) | 2017-05-21 |
KR20140144181A (ko) | 2014-12-18 |
JP7042852B2 (ja) | 2022-03-28 |
KR20200024952A (ko) | 2020-03-09 |
CN104321878A (zh) | 2015-01-28 |
EP3537483A3 (en) | 2019-10-02 |
JP2020074420A (ja) | 2020-05-14 |
CN111180525A (zh) | 2020-05-19 |
WO2013148343A1 (en) | 2013-10-03 |
EP3537483A2 (en) | 2019-09-11 |
EP3709370A1 (en) | 2020-09-16 |
TWI615948B (zh) | 2018-02-21 |
CN111180525B (zh) | 2023-08-08 |
EP2831917A1 (en) | 2015-02-04 |
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