EP2533292A3 - Transistor à haute mobilité d'électrons (HEMT) de groupe III-V à enrichissement et procédé de fabrication - Google Patents

Transistor à haute mobilité d'électrons (HEMT) de groupe III-V à enrichissement et procédé de fabrication Download PDF

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Publication number
EP2533292A3
EP2533292A3 EP12168132.4A EP12168132A EP2533292A3 EP 2533292 A3 EP2533292 A3 EP 2533292A3 EP 12168132 A EP12168132 A EP 12168132A EP 2533292 A3 EP2533292 A3 EP 2533292A3
Authority
EP
European Patent Office
Prior art keywords
group iii
hemt
enhancement mode
over
electron mobility
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12168132.4A
Other languages
German (de)
English (en)
Other versions
EP2533292A2 (fr
Inventor
Zhi He
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Infineon Technologies North America Corp
Original Assignee
International Rectifier Corp USA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA
Publication of EP2533292A2 publication Critical patent/EP2533292A2/fr
Publication of EP2533292A3 publication Critical patent/EP2533292A3/fr
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1066—Gate region of field-effect devices with PN junction gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
EP12168132.4A 2011-06-10 2012-05-15 Transistor à haute mobilité d'électrons (HEMT) de groupe III-V à enrichissement et procédé de fabrication Withdrawn EP2533292A3 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US13/157,562 US8604486B2 (en) 2011-06-10 2011-06-10 Enhancement mode group III-V high electron mobility transistor (HEMT) and method for fabrication

Publications (2)

Publication Number Publication Date
EP2533292A2 EP2533292A2 (fr) 2012-12-12
EP2533292A3 true EP2533292A3 (fr) 2017-05-03

Family

ID=46172672

Family Applications (1)

Application Number Title Priority Date Filing Date
EP12168132.4A Withdrawn EP2533292A3 (fr) 2011-06-10 2012-05-15 Transistor à haute mobilité d'électrons (HEMT) de groupe III-V à enrichissement et procédé de fabrication

Country Status (3)

Country Link
US (1) US8604486B2 (fr)
EP (1) EP2533292A3 (fr)
JP (1) JP2013004967A (fr)

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JP6054620B2 (ja) * 2012-03-29 2016-12-27 トランスフォーム・ジャパン株式会社 化合物半導体装置及びその製造方法
JP5985337B2 (ja) * 2012-09-28 2016-09-06 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US8895992B2 (en) * 2013-02-22 2014-11-25 Taiwan Semiconductor Manufacturing Company, Ltd. High electron mobility transistor and method of forming the same
US8928037B2 (en) 2013-02-28 2015-01-06 Power Integrations, Inc. Heterostructure power transistor with AlSiN passivation layer
KR102071018B1 (ko) * 2013-03-27 2020-03-11 서울반도체 주식회사 혼합 접합 드레인을 구비하는 질화물 반도체 소자 및 그 제조 방법
US20150079738A1 (en) * 2013-06-18 2015-03-19 Stephen P. Barlow Method for producing trench high electron mobility devices
US10312360B2 (en) 2013-06-18 2019-06-04 Stephen P. Barlow Method for producing trench high electron mobility devices
US9978844B2 (en) * 2013-08-01 2018-05-22 Taiwan Semiconductor Manufacturing Co., Ltd. HEMT-compatible lateral rectifier structure
US9806158B2 (en) * 2013-08-01 2017-10-31 Taiwan Semiconductor Manufacturing Co., Ltd. HEMT-compatible lateral rectifier structure
US9245991B2 (en) 2013-08-12 2016-01-26 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device, high electron mobility transistor (HEMT) and method of manufacturing
CN103715086A (zh) * 2013-12-27 2014-04-09 苏州晶湛半导体有限公司 一种增强型器件的制造方法
US9048303B1 (en) * 2014-01-30 2015-06-02 Infineon Technologies Austria Ag Group III-nitride-based enhancement mode transistor
US9337279B2 (en) 2014-03-03 2016-05-10 Infineon Technologies Austria Ag Group III-nitride-based enhancement mode transistor
JP6189235B2 (ja) 2014-03-14 2017-08-30 株式会社東芝 半導体装置
KR101750158B1 (ko) * 2014-12-26 2017-06-22 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 Hemt-호환가능 측면 정류기 구조물
JP6213520B2 (ja) * 2015-05-18 2017-10-18 トヨタ自動車株式会社 ヘテロ接合半導体装置及びその製造方法
US20170033187A1 (en) * 2015-07-31 2017-02-02 Ohio State Innovation Foundation Enhancement mode field effect transistor with doped buffer and drain field plate
JP6234975B2 (ja) 2015-10-02 2017-11-22 株式会社豊田中央研究所 半導体装置
US10211328B2 (en) 2016-09-20 2019-02-19 Board Of Trustees Of The University Of Illinois Normally-off cubic phase GaN (c-GaN) HEMT having a gate electrode dielectrically insulated from a c-AlGaN capping layer
TWI612662B (zh) * 2017-01-09 2018-01-21 國立臺灣師範大學 半導體裝置及其製造方法
CN107180759A (zh) * 2017-07-18 2017-09-19 成都海威华芯科技有限公司 一种增强型P型栅GaN HEMT器件的制作方法
WO2019066866A1 (fr) * 2017-09-28 2019-04-04 Intel Corporation Dispositifs au nitrure du groupe iii sur des substrats soi ayant une couche souple
CN108899367A (zh) * 2018-06-29 2018-11-27 江苏能华微电子科技发展有限公司 一种常闭型氮化镓/氮化铝镓基hemt器件
US11018023B2 (en) * 2018-11-21 2021-05-25 Semiconductor Components Industries, Llc Defect reduction of semiconductor layers and semiconductor devices by anneal and related methods
CN109860289B (zh) * 2018-12-04 2022-05-03 北京大学深圳研究生院 一种晶体管及其制作方法
TWI680503B (zh) 2018-12-26 2019-12-21 杰力科技股份有限公司 氮化鎵高電子移動率電晶體的閘極結構的製造方法
TWI679770B (zh) 2018-12-26 2019-12-11 杰力科技股份有限公司 氮化鎵高電子移動率電晶體及其閘極結構
TWI811394B (zh) * 2019-07-09 2023-08-11 聯華電子股份有限公司 高電子遷移率電晶體及其製作方法
TWI846726B (zh) 2019-09-04 2024-07-01 聯華電子股份有限公司 增強型高電子遷移率電晶體
TWI761704B (zh) * 2019-09-12 2022-04-21 黃知澍 Ga-face III族/氮化物磊晶結構及其主動元件與其閘極保護元件
CN118039685A (zh) * 2019-10-09 2024-05-14 联华电子股份有限公司 高电子迁移率晶体管及其制作方法
US11942326B2 (en) * 2020-12-16 2024-03-26 Semiconductor Components Industries, Llc Process of forming an electronic device including a doped gate electrode
TWI764475B (zh) * 2020-12-28 2022-05-11 國家中山科學研究院 Ｐ型摻雜層電極偏移之增強型氮化鎵元件
CN113871479A (zh) * 2021-09-07 2021-12-31 南方科技大学 晶体管结构及其制备方法
WO2023085524A1 (fr) * 2021-11-15 2023-05-19 엘앤디전자 주식회사 Élément actif semi-conducteur
TWI832676B (zh) * 2022-06-09 2024-02-11 超赫科技股份有限公司 高電子遷移率電晶體之製造方法

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US20070249119A1 (en) * 2006-04-21 2007-10-25 Kabushiki Kaisha Toshiba Nitride semiconductor device
JP2008112868A (ja) * 2006-10-30 2008-05-15 Eudyna Devices Inc 半導体装置およびその製造方法

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JP2007207820A (ja) * 2006-01-31 2007-08-16 Matsushita Electric Ind Co Ltd 電界効果トランジスタおよびその製造方法
JP2007220895A (ja) * 2006-02-16 2007-08-30 Matsushita Electric Ind Co Ltd 窒化物半導体装置およびその製造方法
JP2008053312A (ja) * 2006-08-22 2008-03-06 Toyota Motor Corp 半導体装置
JP4755961B2 (ja) * 2006-09-29 2011-08-24 パナソニック株式会社 窒化物半導体装置及びその製造方法
JP4775859B2 (ja) * 2007-08-24 2011-09-21 シャープ株式会社 窒化物半導体装置とそれを含む電力変換装置
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JP5597921B2 (ja) * 2008-12-22 2014-10-01 サンケン電気株式会社 半導体装置
JP2010225765A (ja) * 2009-03-23 2010-10-07 Panasonic Corp 半導体装置及びその製造方法
US8269253B2 (en) * 2009-06-08 2012-09-18 International Rectifier Corporation Rare earth enhanced high electron mobility transistor and method for fabricating same
JP2011029247A (ja) * 2009-07-22 2011-02-10 Panasonic Corp 窒化物半導体装置及びその製造方法
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JP2008112868A (ja) * 2006-10-30 2008-05-15 Eudyna Devices Inc 半導体装置およびその製造方法

Also Published As

Publication number Publication date
EP2533292A2 (fr) 2012-12-12
US8604486B2 (en) 2013-12-10
JP2013004967A (ja) 2013-01-07
US20120313106A1 (en) 2012-12-13

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