EP2511963A3 - Lichtemittierende Schicht und Vorrichtung, sowie Produktionsverfahren hierfür. - Google Patents

Lichtemittierende Schicht und Vorrichtung, sowie Produktionsverfahren hierfür. Download PDF

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Publication number
EP2511963A3
EP2511963A3 EP12161745.0A EP12161745A EP2511963A3 EP 2511963 A3 EP2511963 A3 EP 2511963A3 EP 12161745 A EP12161745 A EP 12161745A EP 2511963 A3 EP2511963 A3 EP 2511963A3
Authority
EP
European Patent Office
Prior art keywords
light emitting
emitting element
correspoding
element sheet
fabrication methods
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP12161745.0A
Other languages
English (en)
French (fr)
Other versions
EP2511963A2 (de
Inventor
Yasunari Ooyabu
Toshiki Naito
Satoshi Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nitto Denko Corp
Original Assignee
Nitto Denko Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nitto Denko Corp filed Critical Nitto Denko Corp
Publication of EP2511963A2 publication Critical patent/EP2511963A2/de
Publication of EP2511963A3 publication Critical patent/EP2511963A3/de
Withdrawn legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/56—Materials, e.g. epoxy or silicone resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93—Batch processes
    • H01L24/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)
  • Electroluminescent Light Sources (AREA)
EP12161745.0A 2011-04-14 2012-03-28 Lichtemittierende Schicht und Vorrichtung, sowie Produktionsverfahren hierfür. Withdrawn EP2511963A3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2011089965A JP5670249B2 (ja) 2011-04-14 2011-04-14 発光素子転写シートの製造方法、発光装置の製造方法、発光素子転写シートおよび発光装置

Publications (2)

Publication Number Publication Date
EP2511963A2 EP2511963A2 (de) 2012-10-17
EP2511963A3 true EP2511963A3 (de) 2014-09-03

Family

ID=46044342

Family Applications (1)

Application Number Title Priority Date Filing Date
EP12161745.0A Withdrawn EP2511963A3 (de) 2011-04-14 2012-03-28 Lichtemittierende Schicht und Vorrichtung, sowie Produktionsverfahren hierfür.

Country Status (6)

Country Link
US (1) US8877528B2 (de)
EP (1) EP2511963A3 (de)
JP (1) JP5670249B2 (de)
KR (1) KR20120117659A (de)
CN (1) CN102738323B (de)
TW (2) TWI545808B (de)

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US8907502B2 (en) * 2012-06-29 2014-12-09 Nitto Denko Corporation Encapsulating layer-covered semiconductor element, producing method thereof, and semiconductor device
CN111628062A (zh) * 2013-04-11 2020-09-04 亮锐控股有限公司 顶发射式半导体发光器件
JP6186904B2 (ja) * 2013-06-05 2017-08-30 日亜化学工業株式会社 発光装置
DE102013212928A1 (de) * 2013-07-03 2015-01-08 Osram Opto Semiconductors Gmbh Verfahren zum Herstellen eines optoelektronischen Bauelements
US9000467B2 (en) * 2013-07-11 2015-04-07 Dong Yang CHIOU Non-chip LED illumination device
EP3796402A1 (de) * 2013-07-24 2021-03-24 Epistar Corporation Lichtemittierende matrizen mit integrierten wellenlängenumwandlungsmaterialien sowie entsprechende verfahren
NL2011512C2 (en) * 2013-09-26 2015-03-30 Besi Netherlands B V Method for moulding and surface processing electronic components and electronic component produced with this method.
JP2015109337A (ja) * 2013-12-04 2015-06-11 日東電工株式会社 光半導体装置用熱硬化性樹脂組成物およびそれを用いて得られる光半導体装置用リードフレーム、ならびに光半導体装置
JP6176171B2 (ja) * 2014-03-28 2017-08-09 豊田合成株式会社 発光装置の製造方法
US9997676B2 (en) 2014-05-14 2018-06-12 Genesis Photonics Inc. Light emitting device and manufacturing method thereof
US10439111B2 (en) 2014-05-14 2019-10-08 Genesis Photonics Inc. Light emitting device and manufacturing method thereof
TWI557952B (zh) 2014-06-12 2016-11-11 新世紀光電股份有限公司 發光元件
CN111816750A (zh) * 2014-06-19 2020-10-23 亮锐控股有限公司 具有小源尺寸的波长转换发光设备
JP6194514B2 (ja) * 2014-06-26 2017-09-13 豊田合成株式会社 発光装置の製造方法
TWM488746U (zh) * 2014-07-14 2014-10-21 Genesis Photonics Inc 發光模組
DE102014114372B4 (de) * 2014-10-02 2022-05-05 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung von optoelektronischen Halbleiterbauelementen und optoelektronisches Halbleiterbauelement
JP6295941B2 (ja) * 2014-12-15 2018-03-20 株式会社村田製作所 電子部品製造装置
CN105810780A (zh) * 2014-12-30 2016-07-27 晶能光电（江西）有限公司 一种白光led芯片的制备方法
CN105810803A (zh) * 2014-12-30 2016-07-27 晶能光电（江西）有限公司 一种垂直结构led芯片的制备方法
DE102015100575A1 (de) * 2015-01-15 2016-07-21 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Mehrzahl von optoelektronischen Halbleiterbauelementen und optoelektronisches Halbleiterbauelement
JP6762736B2 (ja) 2015-03-16 2020-09-30 晶元光電股▲ふん▼有限公司Ｅｐｉｓｔａｒ Ｃｏｒｐｏｒａｔｉｏｎ 光反射層付光半導体素子、および、光反射層および蛍光体層付光半導体素子の製造方法
WO2016148019A1 (ja) * 2015-03-16 2016-09-22 日東電工株式会社 光反射層付光半導体素子、および、光反射層および蛍光体層付光半導体素子の製造方法
TWI657597B (zh) 2015-03-18 2019-04-21 新世紀光電股份有限公司 側照式發光二極體結構及其製造方法
US9922963B2 (en) 2015-09-18 2018-03-20 Genesis Photonics Inc. Light-emitting device
JP6633881B2 (ja) * 2015-09-30 2020-01-22 ローム株式会社 Ｌｅｄ照明器具およびその製造方法
WO2017116693A1 (en) 2015-12-29 2017-07-06 Koninklijke Philips N.V. Flip chip led with side reflectors and phosphor
JP6974324B2 (ja) * 2015-12-29 2021-12-01 ルミレッズ ホールディング ベーフェー 側面反射器と蛍光体とを備えるフリップチップｌｅｄ
DE102016112293A1 (de) * 2016-07-05 2018-01-11 Osram Opto Semiconductors Gmbh Verfahren zum herstellen eines optoelektronischen bauelements und optoelektronisches bauelement
CN107946441A (zh) 2016-10-12 2018-04-20 亿光电子工业股份有限公司 发光装置及发光二极管封装结构
US10388838B2 (en) 2016-10-19 2019-08-20 Genesis Photonics Inc. Light-emitting device and manufacturing method thereof
US10580932B2 (en) * 2016-12-21 2020-03-03 Nichia Corporation Method for manufacturing light-emitting device
JP6579141B2 (ja) * 2017-03-24 2019-09-25 日亜化学工業株式会社 発光装置および発光装置の製造方法
JP7173000B2 (ja) * 2017-05-22 2022-11-16 昭和電工マテリアルズ株式会社 半導体装置の製造方法及びエキスパンドテープ
CN109712967B (zh) * 2017-10-25 2020-09-29 隆达电子股份有限公司 一种发光二极管装置及其制造方法
TW201919261A (zh) 2017-11-05 2019-05-16 新世紀光電股份有限公司 發光裝置
JP6897640B2 (ja) * 2018-08-02 2021-07-07 日亜化学工業株式会社 発光装置の製造方法
TWI683157B (zh) * 2018-10-19 2020-01-21 友達光電股份有限公司 顯示面板及其製造方法
KR102555412B1 (ko) * 2018-12-14 2023-07-13 엘지디스플레이 주식회사 발광 소자를 포함하는 디스플레이 장치
JP7364603B2 (ja) 2019-06-13 2023-10-18 京東方科技集團股▲ふん▼有限公司 マイクロ発光ダイオードのマストランスファー方法及びシステム
CN110416373B (zh) * 2019-07-10 2021-09-24 瑞识科技（深圳）有限公司 一种正面出光的led发光器件及其制作方法
TWI740212B (zh) * 2019-09-19 2021-09-21 國立陽明交通大學 微型發光二極體晶片的製作方法
CN117497525A (zh) * 2023-12-28 2024-02-02 江西晶亮光电科技协同创新有限公司 多晶发光装置及其制备方法

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WO2009126272A1 (en) * 2008-04-10 2009-10-15 Cree, Inc. LEDs USING SINGLE CRYSTALLINE PHOSPHOR AND METHODS OF FABRICATING SAME

Also Published As

Publication number Publication date
CN102738323B (zh) 2016-12-28
EP2511963A2 (de) 2012-10-17
US20120261681A1 (en) 2012-10-18
CN102738323A (zh) 2012-10-17
TW201242108A (en) 2012-10-16
JP5670249B2 (ja) 2015-02-18
KR20120117659A (ko) 2012-10-24
JP2012222320A (ja) 2012-11-12
US8877528B2 (en) 2014-11-04
TWI545808B (zh) 2016-08-11
TW201637247A (zh) 2016-10-16

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