EP2352165A4 - Halbleiterelement auf nitridbasis und herstellungsverfahren dafür - Google Patents

Halbleiterelement auf nitridbasis und herstellungsverfahren dafür

Info

Publication number
EP2352165A4
EP2352165A4 EP20100758190 EP10758190A EP2352165A4 EP 2352165 A4 EP2352165 A4 EP 2352165A4 EP 20100758190 EP20100758190 EP 20100758190 EP 10758190 A EP10758190 A EP 10758190A EP 2352165 A4 EP2352165 A4 EP 2352165A4
Authority
EP
European Patent Office
Prior art keywords
nitride
production method
semiconductor element
based semiconductor
method therefor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP20100758190
Other languages
English (en)
French (fr)
Other versions
EP2352165A1 (de
EP2352165B1 (de
Inventor
Mitsuaki Oya
Toshiya Yokogawa
Atsushi Yamada
Akihiro Isozaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Intellectual Property Management Co Ltd
Original Assignee
Panasonic Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Corp filed Critical Panasonic Corp
Publication of EP2352165A1 publication Critical patent/EP2352165A1/de
Publication of EP2352165A4 publication Critical patent/EP2352165A4/de
Application granted granted Critical
Publication of EP2352165B1 publication Critical patent/EP2352165B1/de
Not-in-force legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H01S5/320225—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth polar orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)
EP10758190.2A 2009-04-03 2010-03-17 Halbleiterelement auf nitridbasis Not-in-force EP2352165B1 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009091506 2009-04-03
PCT/JP2009/007265 WO2010113237A1 (ja) 2009-04-03 2009-12-25 窒化物系半導体素子およびその製造方法
PCT/JP2010/001920 WO2010113405A1 (ja) 2009-04-03 2010-03-17 窒化物系半導体素子およびその製造方法

Publications (3)

Publication Number Publication Date
EP2352165A1 EP2352165A1 (de) 2011-08-03
EP2352165A4 true EP2352165A4 (de) 2012-11-14
EP2352165B1 EP2352165B1 (de) 2016-05-11

Family

ID=42827569

Family Applications (1)

Application Number Title Priority Date Filing Date
EP10758190.2A Not-in-force EP2352165B1 (de) 2009-04-03 2010-03-17 Halbleiterelement auf nitridbasis

Country Status (5)

Country Link
US (3) US8318594B2 (de)
EP (1) EP2352165B1 (de)
JP (1) JP4568379B1 (de)
CN (1) CN102007576B (de)
WO (2) WO2010113237A1 (de)

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US9518340B2 (en) 2006-04-07 2016-12-13 Sixpoint Materials, Inc. Method of growing group III nitride crystals
WO2010113237A1 (ja) 2009-04-03 2010-10-07 パナソニック株式会社 窒化物系半導体素子およびその製造方法
JP4792136B2 (ja) * 2010-01-18 2011-10-12 パナソニック株式会社 窒化物系半導体素子およびその製造方法
WO2011125290A1 (ja) * 2010-04-02 2011-10-13 パナソニック株式会社 窒化物系半導体素子およびその製造方法
EP2565943A1 (de) 2010-04-28 2013-03-06 Panasonic Corporation Nitridhalbleiterelement und herstellungsverfahren dafür
WO2011135862A1 (ja) 2010-04-28 2011-11-03 パナソニック株式会社 窒化物系半導体素子およびその製造方法
JP5232338B2 (ja) * 2011-04-08 2013-07-10 パナソニック株式会社 窒化物系半導体素子およびその製造方法
JP5641505B2 (ja) * 2011-04-22 2014-12-17 パナソニックＩｐマネジメント株式会社 窒化物系半導体発光素子の製造方法
CN103081138A (zh) * 2011-05-18 2013-05-01 松下电器产业株式会社 氮化物类半导体发光元件及其制造方法
WO2013005391A1 (ja) * 2011-07-06 2013-01-10 パナソニック株式会社 窒化物半導体発光素子およびその製造方法
KR20130014849A (ko) * 2011-08-01 2013-02-12 삼성전자주식회사 쇼트키 배리어 다이오드 및 이의 제조방법
KR101916273B1 (ko) 2012-05-30 2018-11-07 삼성전자주식회사 반도체 발광소자 및 그 제조방법
CN104781057B (zh) 2012-08-28 2018-04-24 希波特公司 第iii族氮化物晶片和其制造方法
WO2014051692A1 (en) 2012-09-25 2014-04-03 Sixpoint Materials, Inc. Method of growing group iii nitride crystals
KR101812736B1 (ko) 2012-09-26 2017-12-27 식스포인트 머터리얼즈 인코퍼레이티드 Iii 족 질화물 웨이퍼 및 제작 방법과 시험 방법
WO2015076110A1 (ja) * 2013-11-19 2015-05-28 ソニー株式会社 半導体レーザ素子
US9633982B2 (en) * 2015-02-17 2017-04-25 Chun Yen Chang Method of manufacturing semiconductor device array
US9816871B2 (en) * 2015-09-25 2017-11-14 Intel IP Corporation Thermal sensor including pulse-width modulation output
JP6890979B2 (ja) * 2017-01-13 2021-06-18 一般財団法人ファインセラミックスセンター 窒化物系半導体の非極性面のエッチング方法および窒化物系半導体の非極性面における結晶欠陥の検出方法

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Also Published As

Publication number Publication date
CN102007576A (zh) 2011-04-06
WO2010113405A1 (ja) 2010-10-07
EP2352165A1 (de) 2011-08-03
US8318594B2 (en) 2012-11-27
WO2010113237A1 (ja) 2010-10-07
US20110037088A1 (en) 2011-02-17
JP4568379B1 (ja) 2010-10-27
JPWO2010113405A1 (ja) 2012-10-04
US20130015427A1 (en) 2013-01-17
US20110253976A1 (en) 2011-10-20
US8299490B2 (en) 2012-10-30
EP2352165B1 (de) 2016-05-11
CN102007576B (zh) 2012-11-07

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