EP2126159A1 - Solution de galvanisation à base d'étain et de bore (sn-b) et procédé de galvanisation mettant en uvre une telle solution - Google Patents
Solution de galvanisation à base d'étain et de bore (sn-b) et procédé de galvanisation mettant en uvre une telle solutionInfo
- Publication number
- EP2126159A1 EP2126159A1 EP07860736A EP07860736A EP2126159A1 EP 2126159 A1 EP2126159 A1 EP 2126159A1 EP 07860736 A EP07860736 A EP 07860736A EP 07860736 A EP07860736 A EP 07860736A EP 2126159 A1 EP2126159 A1 EP 2126159A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- plating
- plating solution
- ions
- free
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000007747 plating Methods 0.000 title claims abstract description 183
- 238000000034 method Methods 0.000 title claims description 31
- RJTANRZEWTUVMA-UHFFFAOYSA-N boron;n-methylmethanamine Chemical compound [B].CNC RJTANRZEWTUVMA-UHFFFAOYSA-N 0.000 claims abstract description 28
- 150000002500 ions Chemical class 0.000 claims abstract description 26
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims abstract description 12
- FAKFSJNVVCGEEI-UHFFFAOYSA-J tin(4+);disulfate Chemical compound [Sn+4].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O FAKFSJNVVCGEEI-UHFFFAOYSA-J 0.000 claims abstract description 12
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910000085 borane Inorganic materials 0.000 claims abstract description 6
- JWAZRIHNYRIHIV-UHFFFAOYSA-N 2-naphthol Chemical compound C1=CC=CC2=CC(O)=CC=C21 JWAZRIHNYRIHIV-UHFFFAOYSA-N 0.000 claims description 24
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 18
- BZOVBIIWPDQIHF-UHFFFAOYSA-N 3-hydroxy-2-methylbenzenesulfonic acid Chemical compound CC1=C(O)C=CC=C1S(O)(=O)=O BZOVBIIWPDQIHF-UHFFFAOYSA-N 0.000 claims description 12
- 108010010803 Gelatin Proteins 0.000 claims description 12
- 229920000159 gelatin Polymers 0.000 claims description 12
- 239000008273 gelatin Substances 0.000 claims description 12
- 235000019322 gelatine Nutrition 0.000 claims description 12
- 235000011852 gelatine desserts Nutrition 0.000 claims description 12
- WHOZNOZYMBRCBL-OUKQBFOZSA-N (2E)-2-Tetradecenal Chemical compound CCCCCCCCCCC\C=C\C=O WHOZNOZYMBRCBL-OUKQBFOZSA-N 0.000 claims description 6
- 229940044654 phenolsulfonic acid Drugs 0.000 claims description 6
- 238000002474 experimental method Methods 0.000 description 38
- 239000004065 semiconductor Substances 0.000 description 17
- 239000010949 copper Substances 0.000 description 15
- 239000000463 material Substances 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 229910052718 tin Inorganic materials 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 229910020816 Sn Pb Inorganic materials 0.000 description 3
- 229910020922 Sn-Pb Inorganic materials 0.000 description 3
- 229910008783 Sn—Pb Inorganic materials 0.000 description 3
- 229910000765 intermetallic Inorganic materials 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910000521 B alloy Inorganic materials 0.000 description 2
- 229910020830 Sn-Bi Inorganic materials 0.000 description 2
- 229910018728 Sn—Bi Inorganic materials 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000007613 environmental effect Effects 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 230000007257 malfunction Effects 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910000967 As alloy Inorganic materials 0.000 description 1
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910018471 Cu6Sn5 Inorganic materials 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910002855 Sn-Pd Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003792 electrolyte Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- OBBXFSIWZVFYJR-UHFFFAOYSA-L tin(2+);sulfate Chemical compound [Sn+2].[O-]S([O-])(=O)=O OBBXFSIWZVFYJR-UHFFFAOYSA-L 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25C—PROCESSES FOR THE ELECTROLYTIC PRODUCTION, RECOVERY OR REFINING OF METALS; APPARATUS THEREFOR
- C25C3/00—Electrolytic production, recovery or refining of metals by electrolysis of melts
- C25C3/30—Electrolytic production, recovery or refining of metals by electrolysis of melts of manganese
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/30—Electroplating: Baths therefor from solutions of tin
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/60—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of tin
Definitions
- the present invention relates to a Sn-B plating solution without lead (hereinafter, referred to as a Pb-free Sn-B plating solution), and a plating method using the same, and more particularly, to a Pb-free Sn-B plating solution that can prevent generation of whisker in a plating layer, and a plating method using the same.
- a semiconductor lead frame has various shapes depending on high densification or integration of the semiconductor chip, or a method of mounting the semiconductor chip on a substrate.
- the semiconductor lead frame is formed of a pad, in which a chip is mounted and maintains a static state of a chip thereon, i.e. a semiconductor memory device, an inner lead, which is connected to the chip by a wire bonding, and an outer lead, which connects the semiconductor lead frame to an external circuit.
- the semiconductor lead frame having such structure is conventionally manufactured using a stamping method or an etching method.
- the semiconductor lead frame is packaged with the chip through assembling processes including a chip attaching process, a wire bonding process, a molding process, a marking process, a separating process, etc.
- terminals of the pad and the inner lead are plated with a metal material, such as silver (Ag), in order to maintain a bondability of a lead wire that connects the chip and the inner lead and an excellent characteristic of the pad.
- a predetermined region of the outer lead is plated with a solder material, i.e. tin-lead (Sn-Pb), in order to improve a soldering performance for substrate mounting after molding a resin protection film.
- a solder material i.e. tin-lead (Sn-Pb)
- it is difficult to perform such a plating method and the semiconductor chip often malfunctions due to plating solution penetrating between the surface of the semiconductor lead frame and epoxy molding.
- an additional process is required in order to remove un-uniformity of a plating layer.
- a pre-plated frame (PPF) method whereby a material having good lead wettability is pre-plated on the top surface of the semiconductor lead frame before the assembling processes.
- PPF method a 2-layered structure, in which a nickel (Ni) layer is formed as an intermediate layer on a metal base material for a lead frame, such as copper (Cu), and a palladium (Pd) layer having good lead wettability is formed entirely or partially on the intermediate layer, a 3-layered structure, in which a Ni layer, a Pd layer, and a gold (Au) flash layer as the top layer are respectively formed on a base material, and a 4-layered structure, in which a Ni strike layer, a Pd-Ni alloy layer, a Ni layer, and a Pd layer are respectively formed on a base material, are commercially used.
- the base material is Cu or an alloy, such as alloy 42 that does not include a Cu component, the semiconductor lead frame badly corrodes. Also, the price of Pd is unstable
- a two-tone pre-plated frame method whereby a region corresponding to the inner lead and a region corresponding to the outer lead in the metal base material are independently plated with different metals.
- the region corresponding to the inner lead may be plated with Ag
- the region corresponding to the outer lead may be plated with Sn-Pb.
- a plating method used in the PPF method and the two-tone pre-plated frame method has several problems due to environmental contamination caused by lead.
- various regulations are being put in place to control the use of lead in electronic products.
- research is continually being conducted on a material that can replace solder paste using lead and a Sn-Pb plating material.
- Pure Sn plating may be the best alternative for Sn-Pd plating. However, in pure Sn plating, short circuits may be formed due to excessive generation of whisker.
- Whisker refers to protruding crystals that are generated on the surface of the plating layer when two different materials bond to each other and thus inter-diffuse.
- the whiskers are vulnerable to heat and humidity.
- the whiskers are formed on the surface of the plating layer of a semiconductor lead frame, the semiconductor is electrically short circuited, and thus the circuit malfunctions.
- a heat process after Sn plating, Ni plating, regulation of Sn particle size, and an alloy of Sn and a dissimilar metal are considered.
- a Sn-Bi (bismuth) alloy is widely used as the alloy of Sn and a dissimilar metal.
- the Sn-Bi alloy cannot sufficiently suppress the generation of whisker, and the deposition potential difference between Sn and Bi is significant, and thus eutectoid is difficult. Also, when concentration of Bi in a solution is high, Bi is deposed on the surface of the cathode, and can fall off after soldering. Also, when content of Bi in a plating layer is high, cracks may form in the plating layer when the plating layer is bent.
- FIGS. 1 (a) through (c) are scanning electron microscope (SEM) photographic images respectively illustrating surface states of plating layers in Experiments 1 through 3 after a normal temperature storage test;
- FIGS. 2 (a) through (c) are SEM photographic images respectively illustrating surface states of plating layers in Experiments 4 through 6 after a room temperature storage test;
- FIGS. 3 (a) through (c) are SEM photographic images respectively illustrating surface states of plating layers in Experiments 7 through 9 after a room temperature storage test
- FIGS. 4 (a) through (c) are SEM photographic images respectively illustrating surface states of plating layers in Experiments 10 through 12 after a room temperature storage test;
- FIGS. 5 (a) through (c) are SEM photographic images respectively illustrating surface states of plating layers in Experiments 13 through 15 after a room temperature storage test;
- FIG. 6 (a) is a SEM photographic image after plating the surface in Experiment 16
- FIG. 6 (b) is a SEM photographic image of Experiment 16 after a room temperature storage test
- FIG. 6 (c) is a SEM photographic image illustrating surface states of a plating layer in Experiment 17 after a room temperature storage test
- FIGS. 7 (a) through (e) are SEM photographic images respectively illustrating surface states of plating layers in Comparative Experiments 1 through 5 after a room temperature storage test.
- the present invention provides a Pb-free Sn-B plating solution that can prevent generation of whisker in a plating layer, and a plating method using the same.
- tin sulfate which is a source of Sn ions
- dimethyl amine borane or trimethyl amine borane which is a source of B ions.
- the amount of the source of Sn ions may be 15 to 50 g/L.
- the amount of B ions may be 0.1 to 3.0 g/L.
- the Pb-free Sn-B plating solution may further contain 30 to 70 ml/L of sulfuric acid.
- the Pb-free Sn-B plating solution may further contain 10 to 40 g/L of cresolsulfonic acid or phenolsulfonic acid.
- the Pb-free Sn-B plating solution may
- the Pb-free Sn-B plating solution may further contain 0.1 to 3 g/L of gelatin.
- a plating method performed using a Pb-free Sn-B plating solution containing tin sulfate, which is a source of Sn ions, and dimethyl amine borane or trimethyl amine borane, which is a 0 source of B ions.
- the plating method may comprises plating the Pb-free Sn-B plating solution at a current density of 0.5 to 5 A/dm 2 .
- the plating method can be performed in room temperature. 5 ADVANTAGEOUS EFFECTS
- a Sn-B alloy plating layer that does not generate whisker can be provided.
- Atoms of B are relatively small compared to atoms of Sn, and thus the atoms of B can penetrate into interstitial sites of Sn as will be described later. Accordingly, when a 0 plating solution containing Sn and B forms a plating layer on a lead frame formed of Cu, Cu can be prevented from being diffused into the Sn, and thus generation of whisker on the plating layer is prevented. Consequently, electrical short circuits in a semiconductor lead frame having a plating region containing Sn and B including the Sn-B alloy plating layer is prevented, and durability of an electrical device using the semiconductor lead frame is improved.
- a plating solution of Sn and B can generate a smooth plating surface.
- ductility of a smooth plating surface is better than a relatively rough plating surface.
- a smooth plating surface can be transformed without any damage, and thus is suitable for providing a plating layer that can protect outer surface of an outer lead frame.
- the plating solution of the present invention does not contain lead (Pb), and thus is harmless to the human body and is environmental friendly.
- Pb lead
- the plating solution of the present invention the plating can be performed with relatively low current density at normal temperature, without separately heating the plating solution. Accordingly, productivity and profitability are improved.
- the diffusion speed of Cu is higher than the diffusion speed of Sn at the bonding interface between Sn and Cu
- a Cu component of the lead frame diffuses toward a grain boundary of Sn of the plating layer.
- an intermetallic compound is formed on the plating layer, having a composition of Cu 6 Sn 5 .
- the intermetallic compound provides compressive stress inside Sn of the plating layer, and the compressive stress is resolved by the generation of whiskers in the Sn, which is a single crystal in a whisker form, on the surface of the plating layer.
- the diffusion between metals is suppressed by inserting a metal having a small atom size into interstitial sites of a crystal structure of Sn, and thus the compressive stress inside Sn is reduced. Consequently, the generation of whisker is prevented.
- the metal having a small atom size may be boron (B).
- the plating solution according to embodiments of the present invention does not include lead ions, and contains tin sulfate, which is a source of Sn ions, and dimethyl amine borane, which is a source of B ions.
- the amount of tin sulfate (SnSO4), which is the source of Sn ions, may be 15 to 50 g/L, and the amount of dimethyl amine borane (DMAB), which is the source of B ions, may be 0.1 to 3.0 g/L.
- DMAB dimethyl amine borane
- TMAB Trimethyl amine borane
- the amount of the source of B ions is more than 0.1 g/L, the amount of B inserted into the interstitial sites of Sn of the plating layer is sufficient compared to a case when the amount of the source of B ions is less than 0.1 g/L. Accordingly as described above, an effect of suppressing the growth of the intermetallic compound of
- 10 to 40 g/L of cresolsulfonic acid or phenolsulfonic acid of may be added to the plating solution in order to delay oxidation of Sn.
- the amount of cresolsulfonic acid or phenolsulfonic acid is less than 10 g/L, Sn is easily oxidized, and when the amount of cresolsulfonic acid or phenolsulfonic acid exceeds 40 g/L, the plating solution may be unstable.
- 0.1 to 0.5 g/L of ⁇ -Naphtol may be added to the plating solution in order to control roughness of the surface of the plating layer.
- the amount of ⁇ -Naphtol is less than 0.1 g/L, coarse crystal particles may be generated, and when the amount of ⁇ -Naphtol exceeds 0.5 g/L, the surface of the plating layer may be very rough.
- 0.1 to 3 g/L gelatin may be added to the plating solution.
- the amount of gelatin is less than 0.1 g/L, the crystal particles are too coarse, and when the amount of gelatin exceeds 3 g/L, a lot of needle shapes or protrusions may be generated.
- the plating solution is electroplated on a Cu plate, which may be the main material of the lead frame.
- the Cu plate is used as a cathode and soluble Sn is used as an anode.
- the current density during the plating may be 0.5 to 5 A/dm 2 , and preferably 1 to 3 A/dm 2 . In the following embodiment, the current density is 1 A/dm 2 .
- the current density exceeds 5 A/dm2 , the plating surface is very rough, the crystal growth is un-uniform, and the plating is unstable. Accordingly, reliability of the plated film deteriorates.
- the current density is less than 0.5 A/dm 2 , the plating time is too long, thereby adversely affecting productivity.
- the plating temperature of the plating solution is room temperature (25 ⁇ 3 ° C).
- the additives When the temperature of the plating solution is increased, such as to 50 ⁇ 3 ° C , the additives may be resolved, and thus the plating may be abnormally performed. As a result, whisker may be generated.
- ⁇ Embodiment 1 A plating solution containing 15 g/L of tin sulfate, 30 ml/L of H 2 SO 4 , 10 g/L of cresolsulfonic acid, 0.1 g/L of ⁇ -Naphtol, and 0.1 g/L of gelatin is produced.
- Experiment 1 0.1 g/L of DMAB is further added to the plating solution, in E ⁇ xpe ⁇ ment 2, 0.5 g/L of DMAB is further added to the plating solution, and in E-xperiment 3, 3 g/L of DMAB is further added to the plating solution.
- Plating is performed under the same plating conditions described above. In other words, a Cu plate is used as a cathode, soluble Sn is used as an anode, the current density is 1 A/dm 2 , and the plating temperature is normal temperature.
- the plating layers of Experiments 1 through 3 are stored at room temperature for 12 months, and then it is determined whether whisker is generated on the surface of the plating layers.
- FIGS. 1 (a) through (c) are scanning electron microscope (SEM) photographic images respectively illustrating surface states of the plating layers in Experiments 1 through 3 after the room temperature storage test.
- a plating solution containing 30 g/L of tin sulfate, 50 ml/L of HaSO 4 , 20 g/L of cresolsulfonic acid, 0.3 g/L of ⁇ -Naphtol, and 0.5 g/L of gelatin is produced.
- Experiment 4 0.1 g/L of DMAB is further added to the plating solution, in Experiment 5, 0.5 g/L of DMAB is further added to the plating solution, and in E xperiment 6, 3 g/L of DMAB is further added to the plating solution.
- Plating is performed under the same plating conditions of Example 1.
- the plating layers of Experiments 4 through 6 are stored at room temperature for 12 months, and then it is determined whether whisker is generated on the surface of the plating layers.
- FIGS. 2 (a) through (c) are SEM photographic images respectively illustrating surface states of the plating layers in Experiments 4 through 6 after the room temperature storage test.
- a plating solution containing 50 g/L of tin sulfate, 70 ml/L of H 2 SO 4 , 40 g/L of cresolsulfonic acid, 0.5 g/L of ⁇ -Naphtol, and 1.0 g/L of gelatin is produced.
- 0.1 g/L of DMAB is further added to the plating solution, in
- FIGS. 3 (a) through (c) are SEM photographic images respectively illustrating surface states of the plating layers in Experiments 7 through 9 after the room temperature storage test.
- a plating solution containing 50 g/L of tin sulfate, 70 ml/L of H 2 SO 4 , 40 g/L of cresolsulfonic acid, 0.5 g/L of ⁇ -Naphtol, and 3.0 g/L of gelatin is produced.
- Experiment 10 0.1 g/L of DMAB is further added to the plating solution, in Experiment 11 , 0.5 g/L of DMAB is further added to the plating solution, and in Experiment 12, 3 g/L of DMAB is further added to the plating solution.
- FIGS. 4 (a) through (c) are SEM photographic images respectively illustrating surface states of the plating layers in Experiments 10 through 12 after the room temperature storage test.
- a plating solution containing 30 g/L of tin sulfate, 50 ml/L of H 2 SO 4 , 20 g/L of cresolsulfonic acid, 0.5 g/L of ⁇ -Naphtol, and 3.0 g/L of gelatin is produced.
- Experiment 15 and 3 g/L of DMAB is further added to the plating solution.
- Plating is performed under the same plating conditions of Example 1.
- the plating layers of Experiments 13 through 15 are stored at room temperature for 12 months, and then it is determined whether whisker is generated on the surface of the plating layers.
- FIGS. 5 (a) through (c) are SEM photographic images respectively illustrating surface states of the plating layers in Experiments 13 through 15 after the room temperature storage test.
- a plating solution containing 50 g/L of tin sulfate, 70 ml/L of H 2 SO 4 , 40 g/L of cresolsulfonic acid, 0.5 g/L of ⁇ -Naphtol, and 1.0 g/L of gelatin is produced.
- Experiment 16 30 ppm of DMAB is further added to the plating solution and in experiment 17, 4 g/L of DMAB is further added to the plating solution.
- Plating is performed under the same plating conditions of Example 1.
- the plating layers of Experiments 16 and 17 are stored at room temperature for 12 months, and then it is determined whether whisker is generated on the surface of the plating layers.
- FIG. 6 (a) is a SEM photographic image of the plating layer after plating the surface of the plating layers in Experiment 16
- FIG. 6 (b) is a SEM photographic image of the plating layer of Experiment 16 after a room temperature storage test
- (c) is an SEM photographic image illustrating surface states of the plating layer in
- whiskers are not generated on the surface of the plating layers according to Embodiments 1 through 5 even after a long time.
- Plating is performed under the same plating conditions as Embodiment 1 , and the plating layers of Comparative Embodiments 1 through 5 are stored at room temperature for 12 months and then checked for whiskers.
- FIGS. 7 (a) through (e) are SEM photographic images respectively illustrating surface states of the plating layers in Comparative Experiments 1 through 5 after the room temperature storage test. As illustrated in FIGS. 7 (a) through (e), when the plating is performed using a plating bath without a source of B ions, whiskers are generated on the surface of the plating layers.
- the present invention provides a Pb-free plating layer that can suppress generation of whiskers.
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Electroplating And Plating Baths Therefor (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR20060138526 | 2006-12-29 | ||
PCT/KR2007/006952 WO2008082192A1 (fr) | 2006-12-29 | 2007-12-28 | Solution de galvanisation à base d'étain et de bore (sn-b) et procédé de galvanisation mettant en œuvre une telle solution |
KR1020070139768A KR101016415B1 (ko) | 2006-12-29 | 2007-12-28 | 전기 도금용 Sn-B 도금액 및 이를 이용한 Sn-B 전기 도금 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
EP2126159A1 true EP2126159A1 (fr) | 2009-12-02 |
EP2126159A4 EP2126159A4 (fr) | 2010-06-02 |
Family
ID=39815105
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
EP07860736A Withdrawn EP2126159A4 (fr) | 2006-12-29 | 2007-12-28 | Solution de galvanisation à base d'étain et de bore (sn-b) et procédé de galvanisation mettant en uvre une telle solution |
Country Status (7)
Country | Link |
---|---|
US (1) | US20100038255A1 (fr) |
EP (1) | EP2126159A4 (fr) |
JP (1) | JP5033197B2 (fr) |
KR (1) | KR101016415B1 (fr) |
CN (1) | CN101595248B (fr) |
TW (1) | TWI386523B (fr) |
WO (1) | WO2008082192A1 (fr) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
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US9005409B2 (en) | 2011-04-14 | 2015-04-14 | Tel Nexx, Inc. | Electro chemical deposition and replenishment apparatus |
US9017528B2 (en) | 2011-04-14 | 2015-04-28 | Tel Nexx, Inc. | Electro chemical deposition and replenishment apparatus |
US10072347B2 (en) * | 2012-07-31 | 2018-09-11 | The Boeing Company | Systems and methods for tin antimony plating |
US9303329B2 (en) | 2013-11-11 | 2016-04-05 | Tel Nexx, Inc. | Electrochemical deposition apparatus with remote catholyte fluid management |
CN106011955A (zh) * | 2016-06-03 | 2016-10-12 | 河海大学 | 一种海工机械耐蚀耐磨Ni-W/Al2O3 CMMA防护层及其制备方法 |
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CN105908228A (zh) * | 2016-06-03 | 2016-08-31 | 河海大学 | 一种镍合金cmma镀层及其制备方法 |
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- 2007-12-28 JP JP2009543955A patent/JP5033197B2/ja not_active Expired - Fee Related
- 2007-12-28 KR KR1020070139768A patent/KR101016415B1/ko active IP Right Grant
- 2007-12-28 US US12/521,338 patent/US20100038255A1/en not_active Abandoned
- 2007-12-28 WO PCT/KR2007/006952 patent/WO2008082192A1/fr active Application Filing
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Also Published As
Publication number | Publication date |
---|---|
US20100038255A1 (en) | 2010-02-18 |
EP2126159A4 (fr) | 2010-06-02 |
CN101595248A (zh) | 2009-12-02 |
KR101016415B1 (ko) | 2011-02-21 |
TW200928006A (en) | 2009-07-01 |
JP2010514932A (ja) | 2010-05-06 |
JP5033197B2 (ja) | 2012-09-26 |
KR20080063177A (ko) | 2008-07-03 |
WO2008082192A1 (fr) | 2008-07-10 |
CN101595248B (zh) | 2011-04-27 |
TWI386523B (zh) | 2013-02-21 |
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