EP2047525A2 - Composant semi-conducteur a couche mince et lien de composant - Google Patents

Composant semi-conducteur a couche mince et lien de composant

Info

Publication number
EP2047525A2
EP2047525A2 EP07785643A EP07785643A EP2047525A2 EP 2047525 A2 EP2047525 A2 EP 2047525A2 EP 07785643 A EP07785643 A EP 07785643A EP 07785643 A EP07785643 A EP 07785643A EP 2047525 A2 EP2047525 A2 EP 2047525A2
Authority
EP
European Patent Office
Prior art keywords
layer
thin
film semiconductor
semiconductor device
heat dissipation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
EP07785643A
Other languages
German (de)
English (en)
Inventor
Siegfried Herrmann
Berthold Hahn
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ams Osram International GmbH
Original Assignee
Osram Opto Semiconductors GmbH
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors GmbH filed Critical Osram Opto Semiconductors GmbH
Publication of EP2047525A2 publication Critical patent/EP2047525A2/fr
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/642—Heat extraction or cooling elements characterized by the shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64—Heat extraction or cooling elements
    • H01L33/647—Heat extraction or cooling elements the elements conducting electric current to or from the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/385—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the optical structure can be arranged on a side of the cover layer facing or facing away from the layer stack.
  • a two-sided arrangement of the carrier layer and the cover layer can advantageously replace a housing body.
  • a contact pad for an outcoupling-side electrical contact of the layer stacks on the carrier layer is applied between the layer stacks.
  • the thin-film semiconductor devices may be electrically connected in various ways.
  • the thin-film semiconductor devices are connected in series.
  • the second connection region of a first thin-film semiconductor component for example by means of a bonding wire, is particularly preferably electrically connected to the heat-dissipation layer of a second thin-film semiconductor component, the heat-dissipation layer serving as an electrical contact.
  • the first and the second connection region may be arranged on a side of the layer stack facing the carrier layer, wherein the first connection region is electrically connected to a first heat-dissipating layer serving as electrical contact and the second connection region is electrically connected to a second heat-dissipating layer serving as electrical contact.
  • Figure 3 is a schematic sectional view of a second. ' .
  • Embodiment of a thin-film semiconductor device according to the invention
  • FIG. 4 shows a schematic sectional view of a third exemplary embodiment of a thin-film semiconductor component according to the invention
  • FIG. 7 shows a schematic top view of a first exemplary embodiment of a component composite according to the invention
  • Figure 9 is a schematic cross-sectional view of a fourth embodiment of a device composite according to the invention.
  • Figure 10 is a schematic cross-sectional view of a fifth embodiment of a device composite according to the invention.
  • the same or equivalent components are each provided with the same reference numerals.
  • the illustrated components of the figures, in particular the sizes of layer thicknesses shown, are in principle not to be regarded as true to scale. Rather, they can be exaggerated in size for clarity.
  • the cover layer 10 is suitable as electrical insulation between a heat dissipation layer 3 and a conductor 9.
  • the heat dissipation layer 3 can have electrical conductivity in addition to the thermal conductivity.
  • a passivation layer 7 is arranged between the conductor track 9 and the semiconductor layer sequence 5. This contains, for example, silicon oxide.
  • the layer sequence 5 is provided essentially for generating radiation.
  • the layer sequence 5 can have a conventional pn junction, a double heterostructure, a single quantum well structure or a multiple quantum well structure.
  • the layer sequence 5 is substrateless, which means that a growth substrate used for growing the layer sequence 5 is no longer present in the finished thin-film semiconductor component 1.
  • the layer stack 8 (see Figure 2) comprises a first electrical connection region 5 and a second electrical connection region 6, which is arranged radiation output side.
  • the layer stack 8 is arranged on a carrier layer 2 which has a heat dissipation layer 3.
  • the carrier layer 2 is a film on which the heat dissipation layer 3 is patterned before the layer stack 8 is mounted on the heat dissipation layer 3.
  • the layer stack 8 is bonded to the heat dissipation layer 3.
  • the thickness D w of the heat dissipation layer 3 is preferably between 5 ⁇ m and 30 ⁇ m, with a metal, for example Cu, Ni or Ag, being particularly suitable as the material.
  • the thickness D 3 of the layer sequence 5 and of the first electrical connection region 4, which is approximately 7 ⁇ m, can thus be less than the thickness D w of the heat dissipation layer 3.
  • the small thicknesses of the carrier layer 2, the slaughterableit ⁇ ngsSchicht 3 and the layer stack 8 allow a total of a thin-film semiconductor device • 1 low overall height. It is a height D ges achievable, which is preferably less than 100 ⁇ m.
  • the combination of carrier layer 2 and cover layer 10, which replace a housing body or form a housing for the thin-film semiconductor component 1, also contributes to this.
  • the low height of a single thin-film semiconductor device 1 allows stacking of a plurality of thin-film semiconductor devices, whereby the luminance can be increased.
  • the heat dissipation layer 3 completely covers a base area of the layer stack 8.
  • the heat dissipation layer 3 it is also possible for the heat dissipation layer 3 to be offset from the layer stack, so that the radiation emitted by the layer sequence reaches the carrier layer 2 directly.
  • the conductor 9, which is provided for a second electrical connection, preferably runs in steps.
  • the conductor track from the first electrical connection region 6 is guided along a radiation decoupling surface 11 over a side surface of the layer stack 8 onto the carrier layer 2.
  • the heat dissipation layer 3 and the conductor 9 are opposite the backing layer 2 or the covering layer 10 in the lateral direction in such a way shows that its electrical connection to a power supply 'is possible in a simple manner.
  • the carrier layer 2 has a first partial layer 2 a and a second partial layer 2 b.
  • the first 'part layer 2a is a thin layer, the thickness of the Partial layer 2a is chosen such that a relatively high heat flow is possible. The heat flow is antiproportional to the layer thickness.
  • the thickness of the sub-layer 2a is in the single-digit micrometer range.
  • the partial layer 2 a is electrically insulating and in particular contains a plastic material.
  • both the conductor track 9 and the heat dissipation layer 3 can be applied to the carrier layer 2, without these being short-circuited.
  • the heat dissipation layer 3 may be formed of a system of electrodeposited layers.
  • the second sub-layer 2b is a film, preferably a metal foil containing copper, for example, is provided.
  • a good heat transfer is possible.
  • a strong expansion of the second sub-layer 2b due to the heating can be advantageously counteracted by the first sub-layer 2a, which has a lower thermal expansion coefficient than the second sub-layer 2b.
  • the carrier layer 2 is arranged on a base 15.
  • the pad 15 advantageously has a good thermal conductivity.
  • the pad 15 is a metal foil.
  • the carrier layer 2, however, may be a plastic film.
  • a carrier layer 2 made of paper is conceivable.
  • a thermal compound is used for the mechanical and thermal connection of the carrier layer 2 to the substrate 15.
  • the thin-film component 1 shown schematically in plan view in FIG. 5 comprises a carrier layer 2 on which the heat-dissipation layer 3 and the layer stack
  • the second electrical connection region 6 and the conductor 9 expediently contain an electrically conductive material.
  • This may be a metal or a TCO (Transparent Conductive Oxide).
  • the carrier layer 2 may be electrically conductive, so that it makes sense to remove the carrier layer 2 in the region between the heat dissipation layer 3 and the contact pad 12 in order to avoid a short circuit during operation of the thin-film semiconductor component 1.
  • the thin-film semiconductor component 1 can be soldered or glued onto a printed circuit board in accordance with an SMT component with the structured carrier layer 2.
  • the component composite 13 shown in FIG. 7 has a plurality of layer stacks 8, which are preferably designed as described in more detail in connection with FIGS. 2 and 6.
  • the stack of layers 8 are anuß.- on a common carrier layer 2 Further, the stack of layers 8 are connected by means of the conductor tracks 9 to a common 'contact pad 12, which is arranged on the carrier layer. 2
  • the size of the device array 13 can be varied by simply dicing the device array 13.
  • the component composite 13 is particularly suitable for backlighting and lighting purposes.
  • component circuits 13 are shown, which have a plurality of thin-film semiconductor devices 1.
  • the thin-film semiconductor components 1 each comprise a layer stack 8 and a part of the common carrier layer 2, on which the layer stacks 8 are arranged.
  • a heat dissipation layer 3 which serves here except for cooling as an electrical contact.
  • a bonding wire 14 leads to the rear side disposed heat dissipation layer 3 of a second thin film semiconductor device 1 adjacent to the first thin film semiconductor device 1.
  • the two thin film semiconductor devices 1 are connected in series.
  • the number of series-connected thin-film semiconductor components 1 can be chosen arbitrarily large due to the application.
  • the layer stacks 8 are arranged in a decentralized manner on the respective heat dissipation layer 3, as a result of which an improved front-side contacting of the layer stacks 8 is possible in comparison to a central arrangement.
  • the base of the heat-dissipating layer 3 is formed like a scale and has in particular a recessed side edge and a side edge thereof opposite bulged.
  • the layer stack 8 is preferably arranged on the indented side edge, since the current injection is better here than in the bulged side edge.
  • part of the heat dissipation layers 3 may be free of layer stacks 8.
  • the unpopulated heat dissipation layers 3 are preferably integrated into the series connection, so that advantageously also a layer stack 8 surrounded by unpopulated heat dissipation layers 3 can be supplied with electrical comparatively simple.
  • FIG. 8c shows a cross-sectional view of the component composite 13 already described in connection with FIG. 8a.
  • the component composite 13 comprises a plurality of layer stacks 8, which are arranged on a common carrier layer 2 and are each mechanically and electrically connected to a first heat dissipation layer 3 and a second heat dissipation layer 3 adjacent to the first heat dissipation layer 3. are connected. Both electrical contacts are in this case on the .jesper heat dissipation layers 3 facing side of the layer stack 8.
  • a complete connection of the layer stacks 8 can take place by means of a complete bridging of adjacent heat dissipation layers 3 by means of a plurality of layer stacks 8.
  • both electrical contacts of the layer stacks 8 are arranged on the side facing the carrier layer 2.
  • the carrier layer 2 contains in this case electrically insulating material, in particular a plastic material, and further comprises openings for plated-through holes.
  • the carrier layer 2 is a plastic film.
  • the base 15, with which the carrier layer 2 is mechanically and thermally connected, is preferably a metal foil, so that a first electrical connection of the layer stacks 8 takes place by means of the base 15.
  • a second electrical connection of the layer stacks 8 is possible by means of the heat dissipation layer (not shown) applied to the carrier layer 2.
  • the methods for wireless contacting used in the invention require no. adjusted bonding process. Furthermore, the arrangement of the heat dissipation layer serving as a conductor track and the further conductor track on one side of the component enables a simple contacting of the thin-film semiconductor component.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Laminated Bodies (AREA)

Abstract

L'invention concerne un composant semi-conducteur à couche mince avec une couche de support et un empilement de couches disposé sur la couche de support, lequel contient un matériau semi-conducteur et sert à émettre un rayonnement. Une couche de dissipation thermique pour refroidir le composant semi-conducteur est appliquée sur la couche de support. L'invention concerne en outre un lien de composant.
EP07785643A 2006-08-04 2007-07-16 Composant semi-conducteur a couche mince et lien de composant Withdrawn EP2047525A2 (fr)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE102006036543 2006-08-04
DE102007004303A DE102007004303A1 (de) 2006-08-04 2007-01-29 Dünnfilm-Halbleiterbauelement und Bauelement-Verbund
PCT/DE2007/001273 WO2008014750A2 (fr) 2006-08-04 2007-07-16 Composant semi-conducteur à couche mince et lien de composant

Publications (1)

Publication Number Publication Date
EP2047525A2 true EP2047525A2 (fr) 2009-04-15

Family

ID=38596017

Family Applications (1)

Application Number Title Priority Date Filing Date
EP07785643A Withdrawn EP2047525A2 (fr) 2006-08-04 2007-07-16 Composant semi-conducteur a couche mince et lien de composant

Country Status (8)

Country Link
US (1) US8872330B2 (fr)
EP (1) EP2047525A2 (fr)
JP (1) JP5517616B2 (fr)
KR (1) KR101386303B1 (fr)
CN (1) CN101542752B (fr)
DE (1) DE102007004303A1 (fr)
TW (1) TWI378571B (fr)
WO (1) WO2008014750A2 (fr)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102005055293A1 (de) 2005-08-05 2007-02-15 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Halbleiterchips und Dünnfilm-Halbleiterchip
DE102007004303A1 (de) 2006-08-04 2008-02-07 Osram Opto Semiconductors Gmbh Dünnfilm-Halbleiterbauelement und Bauelement-Verbund
DE102007004304A1 (de) 2007-01-29 2008-07-31 Osram Opto Semiconductors Gmbh Dünnfilm-Leuchtdioden-Chip und Verfahren zur Herstellung eines Dünnfilm-Leuchtdioden-Chips
DE102007017113A1 (de) 2007-01-31 2008-08-07 Osram Opto Semiconductors Gmbh Halbleiterbauelement mit einer optisch aktiven Schicht, Anordnung mit einer Vielzahl von optisch aktiven Schichten und Verfahren zur Herstellung eines Halbleiterbauelements
DE102007041896A1 (de) 2007-09-04 2009-03-05 Osram Opto Semiconductors Gmbh Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
DE102008013030A1 (de) 2007-12-14 2009-06-25 Osram Opto Semiconductors Gmbh Strahlungsemittierende Vorrichtung
DE102008026841A1 (de) * 2008-02-22 2009-08-27 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil
DE102008030815A1 (de) 2008-06-30 2009-12-31 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Vielzahl von optoelektronischen Bauelementen
WO2014132524A1 (fr) * 2013-02-28 2014-09-04 三菱電機株式会社 Structure de dissipation de chaleur et émetteur-récepteur optique
JP2014204029A (ja) * 2013-04-08 2014-10-27 立山科学工業株式会社 Ｌｅｄ実装用基板
DE102014104230A1 (de) 2014-03-26 2015-10-01 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Bauteil und Verfahren zur Herstellung eines strahlungsemittierenden Bauteils
CA2977431A1 (fr) 2015-03-23 2016-09-29 Stora Enso Oyj Revetement recepteur d'encre de jet d'encre comprenant de l'amidon esterifie ou etherifie et un mineral inorganique
DE102017112223A1 (de) * 2017-06-02 2018-12-06 Osram Opto Semiconductors Gmbh Halbleiterlaser-Bauteil und Verfahren zur Herstellung eines Halbleiterlaser-Bauteils
DE102019106546A1 (de) * 2019-03-14 2020-09-17 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur herstellung von optoelektronischen halbleiterbauteilen und optoelektronisches halbleiterbauteil
US10854530B1 (en) * 2019-07-31 2020-12-01 Taiwan Semiconductor Manufacturing Co., Ltd. Heat dissipation structures
WO2022053548A1 (fr) * 2020-09-14 2022-03-17 Saint-Gobain Glass France Procédé et dispositif de revêtement d'une plaque incurvée avec un matériau photosensible
US11887908B2 (en) 2021-12-21 2024-01-30 International Business Machines Corporation Electronic package structure with offset stacked chips and top and bottom side cooling lid

Family Cites Families (106)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4068572A (en) 1972-01-31 1978-01-17 Hans Vogt Apparatus for heating food
DE8711105U1 (fr) * 1987-08-14 1987-11-26 Siemens Ag, 1000 Berlin Und 8000 Muenchen, De
JP2953468B2 (ja) * 1989-06-21 1999-09-27 三菱化学株式会社 化合物半導体装置及びその表面処理加工方法
JPH0992878A (ja) 1995-09-25 1997-04-04 Shin Etsu Handotai Co Ltd 半導体発光素子及びその製造方法
US5779924A (en) 1996-03-22 1998-07-14 Hewlett-Packard Company Ordered interface texturing for a light emitting device
CN1143394C (zh) 1996-08-27 2004-03-24 精工爱普生株式会社 剥离方法、溥膜器件的转移方法和薄膜器件
DE19640594B4 (de) 1996-10-01 2016-08-04 Osram Gmbh Bauelement
JP4032443B2 (ja) * 1996-10-09 2008-01-16 セイコーエプソン株式会社 薄膜トランジスタ、回路、アクティブマトリクス基板、液晶表示装置
EP0932390A1 (fr) * 1996-10-11 1999-08-04 Sequus Pharmaceuticals, Inc. Composition de liposomes therapeutiques et procede
JP3156756B2 (ja) 1997-01-10 2001-04-16 サンケン電気株式会社 半導体発光素子
US5833073A (en) * 1997-06-02 1998-11-10 Fluoroware, Inc. Tacky film frame for electronic device
US6071795A (en) 1998-01-23 2000-06-06 The Regents Of The University Of California Separation of thin films from transparent substrates by selective optical processing
JP2000049382A (ja) 1998-07-27 2000-02-18 Matsushita Electron Corp 半導体発光装置及びその製造方法
EP0977277A1 (fr) 1998-07-28 2000-02-02 Interuniversitair Microelektronica Centrum Vzw Dispositifs émetteurs de rayonnement à haut rendement et méthode de fabrication
US6504180B1 (en) * 1998-07-28 2003-01-07 Imec Vzw And Vrije Universiteit Method of manufacturing surface textured high-efficiency radiating devices and devices obtained therefrom
JP5019664B2 (ja) 1998-07-28 2012-09-05 アイメック 高効率で光を発するデバイスおよびそのようなデバイスの製造方法
US7253445B2 (en) 1998-07-28 2007-08-07 Paul Heremans High-efficiency radiating device
US6876003B1 (en) 1999-04-15 2005-04-05 Sumitomo Electric Industries, Ltd. Semiconductor light-emitting device, method of manufacturing transparent conductor film and method of manufacturing compound semiconductor light-emitting device
DE19922176C2 (de) * 1999-05-12 2001-11-15 Osram Opto Semiconductors Gmbh Oberflächenmontierte LED-Mehrfachanordnung und deren Verwendung in einer Beleuchtungseinrichtung
ATE376707T1 (de) * 1999-07-09 2007-11-15 Osram Opto Semiconductors Gmbh Verkapselung einer vorrichtung
DE19947030A1 (de) 1999-09-30 2001-04-19 Osram Opto Semiconductors Gmbh Oberflächenstrukturierte Lichtemissionsdiode mit verbesserter Stromeinkopplung
JP2001168344A (ja) 1999-12-13 2001-06-22 Sony Corp 薄膜トランジスタ及びその製造方法と加熱装置並びに表示装置
DE10017336C2 (de) * 2000-04-07 2002-05-16 Vishay Semiconductor Gmbh verfahren zur Herstellung von strahlungsemittierenden Halbleiter-Wafern
DE10020464A1 (de) 2000-04-26 2001-11-08 Osram Opto Semiconductors Gmbh Strahlungsemittierendes Halbleiterbauelement auf GaN-Basis
US6878563B2 (en) * 2000-04-26 2005-04-12 Osram Gmbh Radiation-emitting semiconductor element and method for producing the same
DE10051465A1 (de) 2000-10-17 2002-05-02 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements auf GaN-Basis
TWI289944B (en) 2000-05-26 2007-11-11 Osram Opto Semiconductors Gmbh Light-emitting-diode-element with a light-emitting-diode-chip
TW472400B (en) * 2000-06-23 2002-01-11 United Epitaxy Co Ltd Method for roughing semiconductor device surface to increase the external quantum efficiency
TW515103B (en) 2000-07-24 2002-12-21 Matsushita Electric Ind Co Ltd Semiconductor device, liquid crystal display device, EL display device, and manufacturing methods of semiconductor thin film and semiconductor device
DE10040448A1 (de) 2000-08-18 2002-03-07 Osram Opto Semiconductors Gmbh Halbleiterchip und Verfahren zu dessen Herstellung
JP2002063985A (ja) * 2000-08-22 2002-02-28 Nec Corp 有機エレクトロルミネッセンス素子
DE10041328B4 (de) * 2000-08-23 2018-04-05 Osram Opto Semiconductors Gmbh Verpackungseinheit für Halbleiterchips
US6562648B1 (en) 2000-08-23 2003-05-13 Xerox Corporation Structure and method for separation and transfer of semiconductor thin films onto dissimilar substrate materials
US6614103B1 (en) * 2000-09-01 2003-09-02 General Electric Company Plastic packaging of LED arrays
DE10051159C2 (de) * 2000-10-16 2002-09-19 Osram Opto Semiconductors Gmbh LED-Modul, z.B. Weißlichtquelle
JP3829245B2 (ja) 2000-11-09 2006-10-04 日本軽金属株式会社 ディスペンサー洗浄用アダプター
JP4461616B2 (ja) 2000-12-14 2010-05-12 ソニー株式会社 素子の転写方法、素子保持基板の形成方法、及び素子保持基板
US7279474B2 (en) 2001-04-30 2007-10-09 Glaxo Group Limited Substituted pyrrolo[2,3-d]pyrimidines as antagonists of the corticotropin releasing factor (CRF)
JP2002339952A (ja) 2001-05-16 2002-11-27 Sankyo Seiki Mfg Co Ltd オイル動圧軸受装置およびその製造方法
CN1464953A (zh) 2001-08-09 2003-12-31 松下电器产业株式会社 Led照明装置和卡型led照明光源
JP4180576B2 (ja) 2001-08-09 2008-11-12 松下電器産業株式会社 Ｌｅｄ照明装置およびカード型ｌｅｄ照明光源
JP3989794B2 (ja) * 2001-08-09 2007-10-10 松下電器産業株式会社 Ｌｅｄ照明装置およびｌｅｄ照明光源
JP2003131137A (ja) 2001-10-24 2003-05-08 Tochigi Nikon Corp テラヘルツ光供給光学系、テラヘルツ光検出光学系、及びこれを用いたテラヘルツ光装置
JP3900893B2 (ja) 2001-11-02 2007-04-04 ソニー株式会社 操舵装置、ドライバー認証方法、自動車
DE20220258U1 (de) 2002-09-20 2004-02-19 Osram Opto Semiconductors Gmbh Halbleiterchip
TWI226139B (en) 2002-01-31 2005-01-01 Osram Opto Semiconductors Gmbh Method to manufacture a semiconductor-component
DE10303977A1 (de) 2002-01-31 2003-11-27 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements
JP3776824B2 (ja) 2002-04-05 2006-05-17 株式会社東芝 半導体発光素子およびその製造方法
JP2004047975A (ja) 2002-05-17 2004-02-12 Semiconductor Energy Lab Co Ltd 積層体の転写方法及び半導体装置の作製方法
EP1363319B1 (fr) * 2002-05-17 2009-01-07 Semiconductor Energy Laboratory Co., Ltd. Procédé de transfert d'un object et procédé de fabrication d'un dispositif semiconducteur
JP2003347524A (ja) 2002-05-28 2003-12-05 Sony Corp 素子の転写方法、素子の配列方法及び画像表示装置の製造方法
JP4046118B2 (ja) * 2002-05-28 2008-02-13 松下電工株式会社 発光素子、それを用いた発光装置及び面発光照明装置
JP2004047691A (ja) * 2002-07-11 2004-02-12 Seiko Epson Corp 半導体装置の製造方法、電気光学装置、及び電子機器
CN1672260A (zh) 2002-07-31 2005-09-21 奥斯兰姆奥普托半导体有限责任公司 可表面安装的半导体器件及其制造方法
DE10234978A1 (de) 2002-07-31 2004-02-12 Osram Opto Semiconductors Gmbh Oberflächenmontierbares Halbleiterbauelement und Verfahren zu dessen Herstellung
US7078737B2 (en) 2002-09-02 2006-07-18 Matsushita Electric Industrial Co., Ltd. Light-emitting device
TWI313062B (en) * 2002-09-13 2009-08-01 Ind Tech Res Inst Method for producing active plastic panel displayers
DE10245628A1 (de) 2002-09-30 2004-04-15 Osram Opto Semiconductors Gmbh Elektromagnetische Strahlung emittierender Halbleiterchip und Verfahren zu dessen Herstellung
DE10245631B4 (de) 2002-09-30 2022-01-20 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Halbleiterbauelement
JP4097510B2 (ja) * 2002-11-20 2008-06-11 株式会社沖データ 半導体装置の製造方法
JP4472314B2 (ja) 2002-11-22 2010-06-02 株式会社半導体エネルギー研究所 半導体装置の作製方法、表示装置の作製方法、および発光装置の作製方法
US20040099926A1 (en) * 2002-11-22 2004-05-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, display device, and light-emitting device, and methods of manufacturing the same
CN100530705C (zh) 2003-01-31 2009-08-19 奥斯兰姆奥普托半导体有限责任公司 用于制造一个半导体元器件的方法
US6786390B2 (en) * 2003-02-04 2004-09-07 United Epitaxy Company Ltd. LED stack manufacturing method and its structure thereof
US6903381B2 (en) 2003-04-24 2005-06-07 Opto Tech Corporation Light-emitting diode with cavity containing a filler
TWI330413B (en) 2005-01-25 2010-09-11 Epistar Corp A light-emitting device
US20050033638A1 (en) 2003-08-08 2005-02-10 Toni-Diane Donnet System and method for advertising compliance
DE10339985B4 (de) * 2003-08-29 2008-12-04 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit einer transparenten Kontaktschicht und Verfahren zu dessen Herstellung
WO2005035558A2 (fr) * 2003-10-07 2005-04-21 Michel Thiry Antigenes de piscirickettsia salmonis et leur utilisation
DE10353679A1 (de) 2003-11-17 2005-06-02 Siemens Ag Kostengünstige, miniaturisierte Aufbau- und Verbindungstechnik für LEDs und andere optoelektronische Module
US7341882B2 (en) 2003-11-18 2008-03-11 Uni Light Technology Inc. Method for forming an opto-electronic device
US20050116235A1 (en) 2003-12-02 2005-06-02 Schultz John C. Illumination assembly
JP4496774B2 (ja) 2003-12-22 2010-07-07 日亜化学工業株式会社 半導体装置の製造方法
JP4368225B2 (ja) 2004-03-10 2009-11-18 三洋電機株式会社 窒化物系半導体発光素子の製造方法
US7427782B2 (en) * 2004-03-29 2008-09-23 Articulated Technologies, Llc Roll-to-roll fabricated light sheet and encapsulated semiconductor circuit devices
KR100880812B1 (ko) 2004-03-29 2009-01-30 아티큘레이티드 테크놀러지스 엘엘씨 롤-투-롤 제조된 광 시트 및 캡슐화된 반도체 회로디바이스들
WO2005100016A2 (fr) * 2004-04-16 2005-10-27 Lucea Ag Panneau emetteur de lumiere et feuille a efficacite optique
US6956246B1 (en) * 2004-06-03 2005-10-18 Lumileds Lighting U.S., Llc Resonant cavity III-nitride light emitting devices fabricated by growth substrate removal
US20050274971A1 (en) * 2004-06-10 2005-12-15 Pai-Hsiang Wang Light emitting diode and method of making the same
DE102005013894B4 (de) 2004-06-30 2010-06-17 Osram Opto Semiconductors Gmbh Elektromagnetische Strahlung erzeugender Halbleiterchip und Verfahren zu dessen Herstellung
EP1774599B1 (fr) 2004-07-30 2015-11-04 OSRAM Opto Semiconductors GmbH Procede pour fabriquer des puces semi-conductrices selon la technique des couches minces et puce semi-conductrice fabriquee selon la technique des couches minces
DE102004036962A1 (de) * 2004-07-30 2006-03-23 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Halbleiterchips in Dünnfilmtechnik und Halbleiterchip in Dünnfilmtechnik
KR100616600B1 (ko) * 2004-08-24 2006-08-28 삼성전기주식회사 수직구조 질화물 반도체 발광소자
JP4254669B2 (ja) * 2004-09-07 2009-04-15 豊田合成株式会社 発光装置
US7476910B2 (en) 2004-09-10 2009-01-13 Kabushiki Kaisha Toshiba Semiconductor light emitting device and method for manufacturing the same
DE102004050371A1 (de) 2004-09-30 2006-04-13 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement mit einer drahtlosen Kontaktierung
US7256483B2 (en) * 2004-10-28 2007-08-14 Philips Lumileds Lighting Company, Llc Package-integrated thin film LED
JP2006128512A (ja) 2004-10-29 2006-05-18 Ngk Spark Plug Co Ltd 発光素子用セラミック基板
US7303315B2 (en) 2004-11-05 2007-12-04 3M Innovative Properties Company Illumination assembly using circuitized strips
JP4906256B2 (ja) * 2004-11-10 2012-03-28 株式会社沖データ 半導体複合装置の製造方法
JP2006147787A (ja) 2004-11-18 2006-06-08 Sony Corp 発光素子及びその製造方法
JP2006147889A (ja) 2004-11-19 2006-06-08 Stanley Electric Co Ltd 表面実装型ｌｅｄ
KR100638666B1 (ko) 2005-01-03 2006-10-30 삼성전기주식회사 질화물 반도체 발광소자
EP1875519A2 (fr) * 2005-03-30 2008-01-09 Koninklijke Philips Electronics N.V. Reseau de del flexible
US20060237735A1 (en) 2005-04-22 2006-10-26 Jean-Yves Naulin High-efficiency light extraction structures and methods for solid-state lighting
KR100599012B1 (ko) 2005-06-29 2006-07-12 서울옵토디바이스주식회사 열전도성 기판을 갖는 발광 다이오드 및 그것을 제조하는방법
DE102005055293A1 (de) * 2005-08-05 2007-02-15 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung von Halbleiterchips und Dünnfilm-Halbleiterchip
US20070053179A1 (en) 2005-09-08 2007-03-08 Pang Slew I Low profile light source utilizing a flexible circuit carrier
EP1996860A2 (fr) 2006-01-31 2008-12-03 3M Innovative Properties Company Ensemble eclairage del avec construction de feuille conforme
US7710045B2 (en) 2006-03-17 2010-05-04 3M Innovative Properties Company Illumination assembly with enhanced thermal conductivity
US7806574B2 (en) * 2006-04-16 2010-10-05 Albeo Technologies, Inc. Thermal management of LED-based lighting systems
JP2008028352A (ja) * 2006-06-02 2008-02-07 Nec Lighting Ltd 電子機器および電子機器の製造方法
DE102007004301A1 (de) 2006-08-04 2008-02-07 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines Halbleiterbauelements und Dünnfilm-Halbleiterbauelement
DE102007004303A1 (de) 2006-08-04 2008-02-07 Osram Opto Semiconductors Gmbh Dünnfilm-Halbleiterbauelement und Bauelement-Verbund
TW200830593A (en) 2006-11-15 2008-07-16 Univ California Transparent mirrorless light emitting diode
DE102007004304A1 (de) 2007-01-29 2008-07-31 Osram Opto Semiconductors Gmbh Dünnfilm-Leuchtdioden-Chip und Verfahren zur Herstellung eines Dünnfilm-Leuchtdioden-Chips

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See references of WO2008014750A2 *

Also Published As

Publication number Publication date
TW200816524A (en) 2008-04-01
DE102007004303A1 (de) 2008-02-07
CN101542752B (zh) 2014-01-22
JP5517616B2 (ja) 2014-06-11
TWI378571B (en) 2012-12-01
US8872330B2 (en) 2014-10-28
JP2009545863A (ja) 2009-12-24
CN101542752A (zh) 2009-09-23
WO2008014750A3 (fr) 2008-06-12
KR20090035040A (ko) 2009-04-08
US20100163915A1 (en) 2010-07-01
WO2008014750A2 (fr) 2008-02-07
KR101386303B1 (ko) 2014-04-17

Similar Documents

Publication Publication Date Title
WO2008014750A2 (fr) Composant semi-conducteur à couche mince et lien de composant
EP1911104B1 (fr) Procédé de production de composants semi-conducteurs et composant semi-conducteur à films minces
DE102008021402B4 (de) Oberflächenmontierbares Leuchtdioden-Modul und Verfahren zur Herstellung eines oberflächenmontierbaren Leuchtdioden-Moduls
EP2193553A1 (fr) Puce semi-conductrice optoélectronique, composant optoélectronique et procédé de fabrication d'un composant optoélectronique
EP2281316B1 (fr) Composant semiconducteur optoelectronique
DE102004050371A1 (de) Optoelektronisches Bauelement mit einer drahtlosen Kontaktierung
WO2008043324A1 (fr) Corps semi-conducteur de del et utilisation de celui-ci
EP2223354B1 (fr) Composant optoélectronique
DE102010048159A1 (de) Leuchtdiodenchip
WO2015010997A1 (fr) Composant à semi-conducteur optoélectronique pouvant être monté sur une surface et procédé permettant de produire au moins un composant à semi-conducteur optoélectronique pouvant être monté sur une surface
DE102011101052A1 (de) Substrat mit elektrisch neutralem Bereich
DE102006015115A1 (de) Elektronisches Modul und Verfahren zum Herstellen eines elektronischen Moduls
DE102007004301A1 (de) Verfahren zur Herstellung eines Halbleiterbauelements und Dünnfilm-Halbleiterbauelement
WO2011080058A1 (fr) Dispositif guide d'ondes optiques émetteur de rayonnement pour l'éclairage, module comprenant un tel dispositif et procédé de fabrication d'un tel dispositif
DE102021200044A1 (de) Anschlussträger, optoelektronische vorrichtung und verfahren zum herstellen eines anschlussträgers
EP2054947B1 (fr) Composant opto-électronique
WO2014048699A1 (fr) Composant à semi-conducteur optoélectronique et procédé de fabrication d'un composant à semi-conducteur optoélectronique
DE102021133724A1 (de) Lichtemittierendes modul und verfahren zum herstellen eines lichtemittierenden moduls
DE102007006157A1 (de) Varistor und Leuchtvorrichtung
EP2619807B1 (fr) Puce à semi-conducteur optoélectronique et son procédé de production
WO2009103285A1 (fr) Composant opto-électronique
DE102004047061B4 (de) Optoelektronisches Bauelement und Verfahren zum Herstellen eines optoelektronischen Bauelements
DE102015115900A1 (de) Halbleiterbauelement und Verfahren zur Herstellung eines Halbleiterbauelements
WO2019091830A1 (fr) Support, ensemble comprenant un substrat et un support, et procédé de fabrication d'un support
DE102008054235A1 (de) Optoelektronisches Bauteil

Legal Events

Date Code Title Description
PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

17P Request for examination filed

Effective date: 20090114

AK Designated contracting states

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IS IT LI LT LU LV MC MT NL PL PT RO SE SI SK TR

AX Request for extension of the european patent

Extension state: AL BA HR MK RS

DAX Request for extension of the european patent (deleted)
RBV Designated contracting states (corrected)

Designated state(s): DE

17Q First examination report despatched

Effective date: 20140730

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE APPLICATION IS DEEMED TO BE WITHDRAWN

18D Application deemed to be withdrawn

Effective date: 20161222