WO2011080058A1 - Dispositif guide d'ondes optiques émetteur de rayonnement pour l'éclairage, module comprenant un tel dispositif et procédé de fabrication d'un tel dispositif - Google Patents

Dispositif guide d'ondes optiques émetteur de rayonnement pour l'éclairage, module comprenant un tel dispositif et procédé de fabrication d'un tel dispositif Download PDF

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Publication number
WO2011080058A1
WO2011080058A1 PCT/EP2010/069520 EP2010069520W WO2011080058A1 WO 2011080058 A1 WO2011080058 A1 WO 2011080058A1 EP 2010069520 W EP2010069520 W EP 2010069520W WO 2011080058 A1 WO2011080058 A1 WO 2011080058A1
Authority
WO
WIPO (PCT)
Prior art keywords
radiation
light guide
support plate
semiconductor
emitting
Prior art date
Application number
PCT/EP2010/069520
Other languages
German (de)
English (en)
Inventor
Siegfried Herrmann
Stefan Illek
Original Assignee
Osram Opto Semiconductors Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Opto Semiconductors Gmbh filed Critical Osram Opto Semiconductors Gmbh
Priority to DE112010005057T priority Critical patent/DE112010005057A5/de
Publication of WO2011080058A1 publication Critical patent/WO2011080058A1/fr

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0013—Means for improving the coupling-in of light from the light source into the light guide
    • G02B6/0015—Means for improving the coupling-in of light from the light source into the light guide provided on the surface of the light guide or in the bulk of it
    • G02B6/002—Means for improving the coupling-in of light from the light source into the light guide provided on the surface of the light guide or in the bulk of it by shaping at least a portion of the light guide, e.g. with collimating, focussing or diverging surfaces
    • G02B6/0021—Means for improving the coupling-in of light from the light source into the light guide provided on the surface of the light guide or in the bulk of it by shaping at least a portion of the light guide, e.g. with collimating, focussing or diverging surfaces for housing at least a part of the light source, e.g. by forming holes or recesses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0066—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form characterised by the light source being coupled to the light guide
    • G02B6/0068—Arrangements of plural sources, e.g. multi-colour light sources
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0066—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form characterised by the light source being coupled to the light guide
    • G02B6/0073—Light emitting diode [LED]
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0081—Mechanical or electrical aspects of the light guide and light source in the lighting device peculiar to the adaptation to planar light guides, e.g. concerning packaging
    • G02B6/0083—Details of electrical connections of light sources to drivers, circuit boards, or the like

Definitions

  • the present invention relates to a
  • a radiation-emitting device having a light guide and a support plate on which a radiation-emitting
  • the invention relates to a method for producing such
  • a radiation-emitting device and a module with a plurality of such radiation-emitting devices are provided.
  • Radiation-emitting devices are used, for example, for the backlighting of lighting modules, such as flat screens. These are always smaller device dimensions, such as the
  • Lighting modules desired a homogeneous radiation characteristic of the devices.
  • the invention is based on the object
  • a radiation-emitting device is provided with a light guide and at least one support plate, wherein the support plate forms a main plane and has at least one partial region that is at an angle to the main plane.
  • the portion and the support plate are integrally formed.
  • On the subarea is a
  • the light guide is arranged on the carrier plate and has at least one cavity in which the partial region is arranged.
  • the carrier plate and the light guide are
  • Part of the support plate and the cavity of the light guide within the device occupy the same area of the device, so that the light guide and the support plate directly can be mechanically connected to each other, without causing a distance between the support plate and the
  • the size of the cavity of the light guide is preferably to the size of the sub-area including the
  • the optical waveguide thus completely surrounds the subarea and the radiation-emitting semiconductor component arranged thereon, wherein preferably only one distance, which is necessary for mounting the optical waveguide on the carrier plate, is arranged between the subarea and the subarea
  • Light guide is formed.
  • the light guide is preferably provided with a main surface of
  • Carrier plate mechanically connected more preferably, the mechanical connection is positive and non-positive.
  • the cavity of the light guide preferably forms a
  • the cavity is arranged in particular on the side facing the carrier plate of the light guide.
  • the side facing away from the carrier plate side of the light guide thus preferably has no cavity and is thus formed over the entire surface.
  • radiation-emitting device having an optical waveguide, at least one carrier plate, which forms a main plane, and at least one radiation-emitting
  • the carrier plate has at least one opening.
  • the radiation-emitting Semiconductor component has a lateral expansion plane, which is at an angle to the main plane, and is guided at least partially through the opening of the carrier plate.
  • the light guide is on the
  • Radiation-emitting semiconductor device facing side of the carrier plate arranged.
  • the lateral expansion plane is to be understood in particular as the plane of the semiconductor component which is perpendicular to a main emission direction of the component.
  • the breakthrough of the carrier plate preferably has a rectangular or prismatic shape.
  • prismatic or rectangular breakthrough is preferably the semiconductor device, preferably also in
  • a radiation-emitting surface of the semiconductor component is preferably arranged above the carrier plate.
  • the semiconductor device is thus vertical to
  • Main plane of the support plate mounted, and is integrated with an extended electrical connection area in the opening of the support plate. For electrical contacting takes place a conductor passage through the
  • the light guide can be arranged directly on the support plate.
  • the optical fiber has at least one Cavity, in which the semiconductor device is arranged.
  • the light guide is a glass plate or a casting plate.
  • the light guide may alternatively be a light guide foil, for example a diffuser foil.
  • the optical fiber does not necessarily have to have a cavity.
  • the light guide can be arranged on the side facing away from the carrier plate side of the semiconductor device.
  • Such a device designed is advantageously formed particularly flat.
  • the semiconductor component emits radiation preferably along the main plane of the carrier plate.
  • the semiconductor device has a small lateral extent of at most 100 ⁇ , which are advantageously barely perceptible by an observer with the naked eye.
  • the heat element can by the breakthrough of
  • the semiconductor device and / or the heat element can thereby electrically by means of metallic spring contacts
  • the carrier plate has a plurality of openings.
  • the device comprises a plurality of semiconductor devices, each of which is passed through an aperture.
  • a radiation-emitting surface of the semiconductor components is in each case preferably arranged above the carrier plate, wherein the radiation-emitting surfaces are each preferably directed in the same direction.
  • the radiation-emitting semiconductor component preferably has an active layer for generation
  • the active layer preferably has a pn junction for generating radiation.
  • the semiconductor component is preferably designed as a "substrateless semiconductor component.” As "substrateless
  • the growth substrate on which a semiconductor layer sequence for example epitaxially grown
  • substrateless components preferably have no carrier.
  • Substrate-less components are for example in the
  • Substrate-free semiconductor components preferably have a p-doped semiconductor layer and an n-doped one
  • the semiconductor device preferably emits light in two main emission directions. there is the emission in both main emission directions
  • Arsenide compound semiconductor Based on nitride, phosphide or arsenide compound semiconductors means in
  • the height of the individual substrateless components is preferably less than 50 ym.
  • the semiconductor component may further be formed as a flip-chip component.
  • both of the semiconductor component may further be formed as a flip-chip component.
  • Light exit surface of the device is electrically isolated from each other isolated (flip-chip technology), so that the device can be mounted directly without further connecting wires with the contacting side to the support plate.
  • a light-emitting diode which is electrically contacted by flip-chip technology, and a method for the production thereof, for example, from
  • the carrier plate preferably has a metal, particularly preferably the carrier plate is a metal foil or a metal plastic composite foil.
  • the portions are formed in the support plate, wherein the portions are then bent out of the main plane of the support plate so that they are at an angle to the main plane.
  • the main plane of the carrier plate preferably tensions an x-y plane and thus has no z-component.
  • Semiconductor device preferably protrudes from the x-y plane, so preferably has an x-component, a y-component and a z-component.
  • the angle is in a range between 45 and 95 ° inclusive inclusive.
  • the angle is in a range between 85 ° and 95 ° inclusive.
  • the subregion is perpendicular to the main plane of the carrier plate.
  • Semiconductor device preferably runs perpendicular to the extension of the subregion. If the angle is therefore about 90 °, the main emission direction of the
  • the light guide preferably leads the light emitted by the semiconductor component Radiation along a main extension direction of the
  • the light guide on scattering particles.
  • the radiation emitted by the semiconductor component can be scattered homogeneously in all spatial directions. This will be in the
  • the light guide has a glass or one for the radiation emitted by the semiconductor component
  • transparent film for example, a glass sheet.
  • the light guide is a diffuser.
  • a diffusing screen is inter alia a light guide to be understood with scattering particles contained, in which the of the active layer of the semiconductor device
  • the device preferably has a
  • the radiation decoupling surface of the device may be formed, for example, on a side surface of the light guide. In this case, the
  • the radiation decoupling surface of the device from the surface facing away from the carrier plate of the
  • the device has a thickness in a range between 0.75 mm and 1.25 mm. More preferably, the thickness is less than or equal to 1 mm.
  • miniaturized device in particular for
  • Backlighting different lighting modules can be used, can be achieved with advantage.
  • Optical fiber on the carrier plate facing surface and / or the side surfaces on a mirror layer.
  • Support plate facing surface of the light guide with a metallic coating such as a
  • the carrier plate as a mirror layer
  • Radiation exit surface of the device are coupled out. If the side surfaces of the optical waveguide are mirrored, the radiation exit surface is arranged on the surface of the optical waveguide facing away from the carrier plate.
  • the radiation decoupling structures are in particular at the surface provided for the radiation decoupling
  • Support plate extends.
  • the light guide is designed as a horizontal cylinder, wherein a lateral surface of the light guide
  • a cavity is partially arranged, in which the portion of the support plate
  • the expansion of the cavity is preferably adapted to the size of the partial area. This means that the depth of the cavity preferably corresponds to the height of the subregion, which preferably extends perpendicular to the main plane of the carrier plate. In a further preferred embodiment, the
  • Support plate shaped so that it rests completely on the lateral surface of the light guide.
  • the support plate is therefore itself as a lateral surface
  • the lateral surface of the light guide is not completely enclosed by the carrier plate. In particular, only at a portion of the lateral surface of the light guide is the
  • the remaining portion of the lateral surface preferably forms the radiation output surface of the
  • the clamp is preferably a copper clamp.
  • the clamp is in direct contact with the molded carrier plate.
  • the carrier plate is preferably designed to be electrically conductive.
  • the device is by means of two terminals, in particular Copper terminals, mechanically fastened, wherein the terminals are preferably arranged on two opposite edge regions of the light guide.
  • the terminals are preferably arranged on two opposite edge regions of the light guide.
  • a radiation-emitting semiconductor component is arranged, on which in each case a radiation-emitting semiconductor component is arranged.
  • Semiconductor device is preferably in each case
  • the carrier plates are preferably mechanically connected to one another with an electrically insulating layer.
  • the carrier plates preferably have one another
  • Semiconductor components are arranged such that their emitted radiation is coupled into the optical waveguide and guided therein.
  • the semiconductor components are on two opposite sides of the light guide
  • Radiation characteristic of the device is achieved.
  • the radiation outcoupling side of the device is located in this case on the side remote from the carrier plate side of the light guide.
  • the light guide in this case has a plurality of cavities, in each of which a partial region of a carrier plate is arranged, on each of which a radiation-emitting semiconductor component is arranged.
  • the support plates are in this embodiment advantageously not mirror-symmetrical, but congruent and arranged in series.
  • Support plates are covered by a common light guide, which has a respective cavity corresponding to the formed partial regions.
  • Each carrier plate preferably has a partial region on which a respective radiation-emitting semiconductor component is arranged, wherein the radiation-emitting elements
  • Semiconductor devices are preferably connected in series.
  • Component is guided to an adjacent support plate, said electrical contact is electrically isolated from the own support plate by means of an electrically insulating layer.
  • a second contact of the respective semiconductor component is preferably guided over the respective own carrier plate.
  • connection contacts preferably metal contacts, on. These may preferably be designed as heat sinks.
  • the light guide is transparent to the radiation emitted by the semiconductor components.
  • the optical fiber has glass or a transparent plastic.
  • the conversion plate preferably converts a radiation of one wavelength emitted by the semiconductor component into radiation of a different wavelength.
  • an effective color mixing in the light guide can advantageously be achieved, in the event that a plurality of semiconductor components are used which emit radiation of different wavelengths in each case.
  • a module according to the invention preferably has a plurality of radiation-emitting devices according to the invention, which are preferably arranged side by side in a row or as a matrix, particularly preferably adjacent ones
  • Devices are mechanically interconnected.
  • the optical fibers of the individual device are in direct contact with adjacent optical fibers.
  • Adjacent carrier plates are particularly preferably connected to one another mechanically by means of an electrically insulating layer.
  • Such modules are particularly advantageous for the backlighting of lighting units, such as flat screens or LCDs (LCD: "Liquid Crystal Display”).
  • a module can be achieved with advantage, which has a low module height and at the same time a
  • a method for producing a radiation-emitting device comprises the following method steps:
  • insulating material for example plastic
  • conductor tracks are applied to the electrically insulating material, which serve for electrical contacting of the semiconductor component.
  • the semiconductor device is by means of a
  • the subregions are mechanically deformed such that a desired emission angle of the
  • the device is integrated into a lighting unit.
  • the support plate is in an injection mold for applying the light guide
  • the optical fiber is produced by means of an injection molding process.
  • a casting method for producing the optical fiber is used.
  • a cylindrical optical waveguide can be produced, wherein the subregions and the radiation-emitting semiconductor components disposed thereon are directly encapsulated or encapsulated with material of the optical waveguide, so that no distance between material of the optical waveguide
  • Fiber optic and sub-area and / or semiconductor device is formed.
  • the device is potted with a plastic.
  • Figure 2 is a schematic diagram of another
  • Figures 6, 15C each show a schematic representation of a
  • Embodiment of a radiation-emitting semiconductor device which in a
  • Figures 7, 18A, 18B each show a schematic representation of an embodiment of a light guide for a device according to the invention. Identical or equivalent components are each provided with the same reference numerals. The illustrated
  • FIG. 1 shows a schematic view of a
  • a radiation-emitting device comprising a
  • the support plate 1 forms a main plane 11 and has a portion 12 on.
  • the portion 12 and the support plate 1 are integrally formed.
  • the main plane 11 lies, for example, in an x-y plane, thus has a horizontal course and points
  • the partial region 12 is at an angle to the main plane of the carrier plate 1, so that the partial region protrudes from the x-y plane, ie has an x component, a y component and a z component.
  • the portion 12 is substantially perpendicular to the main plane eleventh
  • the carrier plate 1 is a metal plate, a metal foil or a metal plastic composite foil. By means of a punching or etching process are doing in the
  • Support plate 1 the portion 12 formed and formed by mechanical deformation such that the portion 12 is at the angle to the main plane 11.
  • the carrier plate 1 thus has an area in the main plane
  • the light guide 2 On a surface of the support plate 1, the light guide 2 is arranged, in particular positively and non-positively connected to a surface of the support plate 1.
  • the light guide 2 is arranged on the side of the support plate 1, on which the portion 12 is formed.
  • the light guide 2 preferably has a cavity 21 (not shown), in which the partial area 12 is arranged, in particular protrudes.
  • Semiconductor device 3 is arranged, which has a
  • the radiation-emitting surface 32 of the radiation-emitting semiconductor component 3 extends along the plane of extent of the partial region 12.
  • portion 12 is therefore substantially perpendicular to the main plane 11 of the support plate 1, so is the
  • the radiation emitted by the radiation-emitting semiconductor component runs essentially along
  • the radiation-emitting semiconductor device 3 is
  • a semiconductor body for example an LED or an LED chip, which has an active layer.
  • the active layer is in particular designed such that it is suitable for generating radiation.
  • the semiconductor component is preferably a light-emitting diode chip, which is designed in particular as a substrateless chip. As a substrateless chip is considered in the context of the application, a chip during its production, the growth substrate, on the one
  • Semiconductor layer sequence comprising the semiconductor body, for example epitaxially grown, has been completely detached and has no carrier.
  • the chip is composed of an n-doped semiconductor layer and a p-doped semiconductor layer, wherein an active, for
  • Radiation generation is formed suitable pn junction.
  • the semiconductor layers preferably comprise a III / V compound semiconductor material.
  • a III / V compound semiconductor material comprises at least one element of the third main group such as Al, Ga, In, and a fifth main group element such as
  • Term I I I / V compound semiconductor material is the group of binary, ternary and quaternary compounds which
  • Such a binary, ternary and quaternary compound may also contain, for example, one or more dopants and additional constituents
  • a converter plate 34 may be arranged, which is the one of the
  • Wavelength is converted into radiation of a second wavelength, so that the device comprises mixed radiation comprising
  • the cavity of the light guide 2 is preferably formed in the region of the partial region 12 of the carrier plate 1.
  • the size of the cavity is related to the size of the cavity
  • Support plate 1 connects.
  • the light guide 2 does not protrude laterally beyond the support plate 1 in a plan view of the device.
  • the light guide 2 preferably has scattering particles on which the radiation emitted by the semiconductor component and / or the converted radiation are homogeneously scattered in all spatial directions. This can be an efficient
  • Support plate 1 are electrical connection contacts. 6
  • connection contacts 6 an electrically insulating layer is arranged, which electrically isolated from the carrier plate and the terminal contacts from each other (not shown).
  • Layer are preferably two openings, so-called “via", out, are guided by the conductor tracks, which the radiation-emitting semiconductor device 3 with the
  • Connecting contacts 6 electrically connect with each other (not shown). These are the tracks on the of the
  • connection contacts remote surface of the support plate 1 and guided on the portion 12 to the semiconductor device 3 and electrically connected, wherein an electrical insulation, for example, an electrically insulating layer is provided between the conductor tracks, the support plate and the subregion.
  • connection contacts 6 Connected laterally to the connection contacts 6 is an electrically insulating layer 5, which can serve, for example, to connect the device shown in FIG. 1 in series to further devices, as shown for example in FIG. 1, and to connect them mechanically.
  • the device has a main emission direction 4, which in the present exemplary embodiment is formed laterally of the device and by means of an arrow in FIG. 1
  • the device of the embodiment of Figure 1 is thus a side emitter, a so-called
  • Radiation decoupling 24 arranged, which provides a homogeneous radiation over the entire
  • the radiation decoupling surface 22 has a roughening or
  • three-dimensional structures such as pyramids or domes, for light extraction.
  • Mirror layer 23 for example, a silver layer, so that the of the semiconductor device 3
  • the support plate 1 and the light guide 2 are in the
  • Embodiment of Figure 1 each rectangular in shape.
  • the light guide 2 is for example a
  • Light distribution plate such as a glass plate or a plastic plate, for those of the
  • the carrier plate is a metal foil and the light guide is a plastic light guide.
  • the composite plastic and metal is an effective heat sink, so that the heat generated during operation of the device can be effectively dissipated from the semiconductor device to the outside. Furthermore, this composite technique is advantageously inexpensive.
  • the entire structure of the device is advantageously very flat and essentially determined by the dimensions of the light guide 2.
  • Such devices are for example due to the large radiation decoupling surface 22 and the flat design for the backlighting of flat screens and LCDs suitable.
  • the device is designed in particular as a surface-mountable component which can be installed in an electronics-compatible manner (SMT components: "Surface Mounted Technology”) .
  • SMT components "Surface Mounted Technology"
  • the device is distinguished by a cost-effective design and by a cost-effective production method.
  • FIG. 2 shows a schematic diagram of an exemplary embodiment of a device which has a plurality of
  • Radiation-emitting semiconductor devices 3 has.
  • the light guide of the device is in the
  • the device of FIG. 2 has four radiation-emitting semiconductor components 3, which are preferably substrateless light-emitting diode chips. Such light-emitting diode chips are known to the person skilled in the art, for example, from the document DE 10 2007 004 304, the disclosure content of which is hereby explicitly incorporated by reference.
  • the semiconductor devices 3 each have
  • Radiation emitting surfaces 32 from which the emitted radiation from the semiconductor devices exits from these and is coupled into the optical waveguide.
  • two semiconductor devices 3 are arranged on opposite sides of the carrier plate 1.
  • the radiation-emitting surfaces 32 of the respective opposing semiconductor components 3 are arranged such that they are emitted by the respective semiconductor components Radiation is directed in the direction of the opposite semiconductor device 3.
  • the radiation emitted by the individual semiconductor components 3 is thus guided into the optical waveguide, where it is preferably scattered due to scattering particles in such a way that it is homogeneous
  • Distribution of the radiation takes place in the light guide.
  • the radiation output surface of the device is formed in the embodiment of Figure 2 on the side remote from the carrier plate surface of the light guide.
  • Device of Figure 2 is therefore a surface emitter or a vertical emitter.
  • the main emission direction 4 of the device and the
  • Radiation over the entire radiation output surface 22 can be achieved.
  • semiconductor devices are used, each having radiation in another
  • Wavelength range and therefore emit in another color locus, through the light guide and the therein
  • an efficient light mixture can be achieved, resulting in a total of a homogeneously colored radiation decoupling surface, in particular luminous surface results.
  • an efficient color mixing takes place in the light guide.
  • FIG. 1 Views of a device shown, which in particular has two radiation-emitting semiconductor devices 3.
  • the semiconductor devices 3 are arranged according to the principle shown in Figure 2, that is the
  • Semiconductor devices 3 are each aligned such that the radiation emitted by the devices 3 in
  • Light guide arranged scattering particles is homogeneously distributed.
  • the devices are arranged mirror-inverted to each other.
  • the mirror plane is arranged perpendicular to the carrier plate 1 in the region of the electrically insulating layer 5.
  • the light guide 2 of the device expands over the two radiation-emitting semiconductor components.
  • the light guide 2 is formed in one piece and closes the device from one side.
  • the extension of the light guide preferably corresponds to the sum of
  • the light guide has two cavities, which have been produced for example by means of a sandblasting process.
  • the cavities of the light guide 2 are in accordance with the respective sub-areas and the radiation-emitting
  • the electrical contacting of the semiconductor components is formed by conductor tracks, wherein the radiation-emitting semiconductor components are connected in series.
  • the semiconductor components by means of a conductor track directly
  • Semiconductor devices 3 serve, are guided by means of openings through the respective support plate 1 and through an electrically insulating layer to terminal contacts 6, which on the opposite side of the optical fiber of the
  • connection contacts 6 are preferably metal contacts.
  • Figure 3A is thus a surface emitter.
  • the optical waveguide 3 may preferably have mirrored side surfaces and a mirrored surface facing the carrier plate 1, so that the radiation generated in operation for the
  • Radiation decoupling surface is directed out of the device.
  • FIG. 3A is identical to the embodiment of FIG.
  • Figure 3B is a schematic cross section of a
  • FIG. 3B the semiconductor devices 3 are not as in FIG.
  • the support plate 1 four openings, so-called vias, on, wherein in each case an electrical connection of a semiconductor device 3 is guided by a respective conductor track through an opening and on the side facing away from the light guide 2 side
  • connection contacts 6 in particular metal contacts, externally electrically contacted.
  • the terminal contacts 6 are for this purpose by means of a distance from each other electrically isolated from each other to a
  • the thickness D of the device is preferably in a range between 0.8 mm and 1.5 mm, more preferably between 0.9 mm and 1.1 mm.
  • the length L of the device is preferably in the centimeter range.
  • FIG. 3C is a schematic exploded view of FIG.
  • the carrier plates 1 of the individual devices are mechanical by means of an electrically insulating layer 5
  • connecting contacts 6 are arranged, which are separated from the carrier plates by means of a further electrically insulating layer are electrically isolated (not shown).
  • Support plate 1 a light guide 2 is placed, each having a cavity in the region of the semiconductor devices.
  • the light guide 2 can thus be plugged onto the carrier plate 1, wherein the semiconductor components find space in the respective cavity.
  • the remaining area of the light guide takes place between the support plate 1 and the
  • Optical fiber 2 a positive mechanical connection instead.
  • FIGS. 3B and 3C correspond to the exemplary embodiment of FIG. 3A.
  • FIGS. 4A to 4C each show a device
  • the carrier plates 1 have no mirror symmetry but are each designed and arranged identically to one another.
  • the device is prior to the method step of deforming the partial regions 12 of the carrier plates 1
  • Support plate 1 is a semiconductor device 3, respectively
  • the semiconductor devices are each about
  • FIG. 4B shows the method step of applying the
  • the subregions 12 of the respective carrier plates 1 are already shaped such that they are substantially perpendicular to the respective main plane of the carrier plates 1.
  • the light guide 3 has a plurality of cavities 21, which are formed for example by means of a sandblasting process. In this case, the cavities 21 are each arranged in regions of the optical waveguide 3 which coincide with the subregions 12 of the carrier plates 1.
  • the light guide 2 can so on the
  • Carrier plates 1 are arranged directly and mechanically connected to these. The sections and the ones on it
  • arranged radiation-emitting semiconductor devices 3 are arranged in each case a cavity 21 of the light guide 2 or the subregions 12 and the
  • the light guide 2 is preferably made of an electrically insulating and radiation-permeable or transparent material.
  • the support plates 1 facing surface of the light guide 2 a are preferably made of an electrically insulating and radiation-permeable or transparent material.
  • the mirror layer 23 is preferably electrically insulated from the carrier plates 1, for example by means of an electrically insulating layer.
  • FIG. 4C shows the electrical contacting of the semiconductor components in greater detail. In particular, in the embodiment of Figure 4C is the
  • the semiconductor devices 3 are in series with each other
  • FIGS. 4A to 4C corresponds to the embodiment of FIGS. 3A to 3C.
  • Radiation-emitting semiconductor devices 3 has. Although the representation of the embodiment of Figure 5 differs from the representation of the embodiment of Figure 3A in part, these embodiments are in the
  • the individual semiconductor components 3 are each arranged on different sides of the device, wherein the radiation-emitting surface 32 of the individual
  • Radiation-emitting semiconductor devices 3 are directed into the interior of the light guide 2.
  • the semiconductor components preferably emit at least partially radiation in different wavelength ranges. The of the
  • Light guide 2 is coupled and guided and scattered in this so that a homogeneous light mixture of the individual emitted from the semiconductor devices radiations results. This can be a homogeneous with advantage
  • Radiation decoupling surface 22 of the device can be achieved.
  • LCDs Liquid Crystal Display
  • the device is achieved with advantage that the light of the individual radiation-emitting semiconductor devices 3 is generated directly in the light guide 2 and fanned out there.
  • the radiation-emitting semiconductor components are integrated in the optical waveguide 2 by means of the cavities formed in the optical waveguide 2. This arrangement
  • the device is advantageously particularly flat and inexpensive to produce.
  • Semiconductor component 3 shown, for example, for a device of the embodiments of Figures 1 to 5 suitable is.
  • the radiation-emitting semiconductor component 3 has semiconductor layers 33 which are suitable for generating electromagnetic radiation.
  • Semiconductor layers 33 have a radiation-emitting surface 32, on which a converter plate 34 for the conversion of the generated by the semiconductor layers
  • the semiconductor component 3 has a first and a second contact, by means of which the semiconductor layers are electrically contactable.
  • the first and the second contact are electrically connected externally by means of conductor tracks.
  • the first contact, the second contact and the semiconductor layers are arranged on a common carrier 35 which
  • FIGS. 7A and 7B show views of a light guide 2 which can be used, for example, for a device according to the exemplary embodiment of FIG. 4B.
  • FIG. 7A shows a plan view of a light guide 2.
  • the light guide 2 is particularly suitable for a device which has a plurality of radiation-emitting elements
  • Optical fiber 2 a plurality of cavities 21, the
  • the light guide 2 may, for example, round or
  • the symmetry of the disposed cavities 21 is a mirror symmetry and / or axis symmetry.
  • the diameter of the light guide 2 is for example about 100 mm, preferably in a range between 99 mm and 100 mm.
  • the thickness is for example about 1 mm.
  • the distances Di of the individual cavities 21 to one another are, for example, in a range between 9 mm and 11 mm inclusive, preferably 10 mm, whereby in this case the respective centers of the cavities are taken as reference.
  • the cavities 21 each have spacings D 2 relative to one another, which lies in a range of between 19 mm and 21 mm, for example 20 mm.
  • the distance D3 is preferably in a range between 39 mm and 41 mm inclusive, for example 40 mm.
  • the cavities have a preferred width Bi of from 0.1 to 0.5 mm, for example 0.3 mm.
  • FIG. 7B shows a section through the light guide 2, which lies in particular in a region between the markings A, A from the embodiment of FIG. 7A.
  • the cavities 21 run funnel-shaped, the width Bi being in a preferred range between 0.1 mm and 0.5 mm, for example 0.3 mm, and the width B 2 in a preferred range between 0.4 mm and 0 inclusive , 8 mm, for example 0.6 mm.
  • FIG. 8 shows a schematic view of a device which has a plurality of radiation-emitting elements
  • Semiconductor devices 3 on a support plate 1 shows.
  • the semiconductor components 3 each have a common
  • Main emission direction 31 wherein the radiation is coupled in each case in the light guide 2 and there in such a way
  • Semiconductor devices can be connected in parallel or separately electrically connected separately.
  • the light guide 2 preferably has one each
  • Mirror layer preferably a silver mirror
  • the sides of the semiconductor components which lie opposite the radiation-emitting surface, have a mirror layer 23. This is the advantage of the individual components
  • Support plate 1 opposite surface of the light guide 2 is formed.
  • the radiation decoupling surface 22 on a roughening, so that the
  • the semiconductor components 3 preferably each have a converter plate 34 on the radiation-emitting
  • Semiconductor device for example, about 6 ym thin, and the converter plate, which is for example about 20 ym thin, further amplified.
  • Semiconductor devices 3 preferably blue radiation passing through a converter plate in radiation in the yellow
  • Cavities 21 in the light guide 2 are made possible.
  • the additional cavities 21 are potted with a converter compound, wherein the desired white point through this
  • the beam path is set by adjusting the distance between converter plates and
  • FIG. 8 shows a surface emitter which is used, in particular, for the backlighting of displays.
  • FIGS. 9 and 10 each show an exemplary embodiment of a device in which the light guide
  • the light guide 2 has a main extension direction 25 which extends along the
  • Main plane 11 of the support plate 1 extends.
  • the light guide 2 is thus a horizontal cylinder, directly on the
  • Support plate 1 rests.
  • the support plate 1 is not shown in the embodiment of Figure 9A for clarity.
  • On the side facing away from the carrier plate side of the light guide 2 is
  • Device is used, for example, as a surface-mountable radiation body, which can be used in particular as a flash.
  • the embodiment of Figure 9A coincides otherwise with the embodiment of Figure 3A.
  • FIG. 9B is a section through a device of FIG.
  • the radiation-emitting semiconductor device 3 is integrated, wherein on the
  • Semiconductor component preferably a converter plate 34 is arranged.
  • Converter plates are preferably parallel to
  • Radiation decoupling surface 22 of the device As a result, it is advantageously possible to achieve homogenization of the emitted light, in particular of the white light emitted. Furthermore, a yellow impression, by the
  • Converter plate 34 may occur, advantageously reduced, which is particularly advantageous in flash lights.
  • the support plate 1 is, as shown in the embodiment of Figure 9B, shaped such that the support plate 1 completely on the outer surface 26 of the light guide. 2
  • the carrier body 1 can on a
  • Heat sink 8 may be arranged, through which the heat generated during operation can be selectively dissipated from the semiconductor device 3 to the outside.
  • the embodiment of FIG. 10A corresponds to FIG.
  • the light guide 2 also has a mirror layer 23, preferably one, in contrast to the exemplary embodiment of FIG. 9A
  • the radiation emitted by the semiconductor components, which is guided in the direction of the carrier body 1, can be specifically directed in the direction of the radiation coupling-out surface 22.
  • FIG. 10B shows a plan view of a device according to the exemplary embodiment of FIG. 10A. Since the
  • Optical fiber 2 is designed to be transparent to radiation, the mirror layer 23 is visible in supervision of the device.
  • the device has a length L which is preferably in a range of between 0.9 cm and
  • the width B of the device is preferably in a range between 0.9 mm inclusive and 1.1 mm inclusive, for example 1 mm.
  • the semiconductor device has a thickness of about 0.1 mm together with the converter plate.
  • FIGS. 1A to 11E each embodiment of a device in different stages of the method are shown.
  • the production of a light guide 3, which is designed as a transverse cylindrical radiator, is shown in FIGS. 1A to 11E.
  • FIG. 11A shows a plan view of a carrier plate 1, in which partial regions 12 are formed.
  • Subregions 12 are produced, for example, by means of a stamping or an etching process.
  • the stamping or an etching process Preferably, the
  • Support plate 1 a punched metal sheet or a Metal plastic composite foil.
  • the carrier plate forms a main plane, which lies in the drawing plane in FIG. 11A.
  • FIG. IIB shows a cross section through the carrier plate 1 of the embodiment of FIG. IIA.
  • the subregions 12 are still in the main plane of the support plate 1. Subsections 12 are then each one
  • Radiation-emitting semiconductor device mounted and electrically connected (not shown).
  • the portions 12 of the support plate 1 is rotated from its original position, wherein the axis of rotation in this example passes through the semiconductor device center line.
  • the semiconductor components 3 are electrically contacted such that in each case one electrical connection of a semiconductor component 3 via a conductor track 7 to an adjacent electrical connection of an adjacent one
  • Semiconductor device 3 is electrically connected to each other.
  • the electrical connections of a semiconductor component 3 are in each case electrically insulated from one another by means of a spacing and / or an electrically insulating layer in order to prevent a short circuit.
  • Figure HD a cross section of the support plate of Figure HC is shown.
  • a 90 ° rotation of the subregions takes place, so that the subregions 12 are substantially perpendicular to the main plane 11.
  • the carrier plate 1 shown in Figure HC is
  • a plurality of optical fibers 2 is then by means of a molding technique or a
  • UV-resistant material such as silicone molded.
  • such a module is produced, which has a multiplicity of molded optical waveguides 2, which are designed in particular as cylindrical radiators.
  • the electrical connections of the semiconductor devices 3 are led out of the optical fibers 2, so that the
  • Semiconductor devices 3 are electrically connected externally.
  • the individual light guides 2 can be singulated, wherein the contacts are thereby formed by means of a cut or a bending such that the
  • the light guide 2 can then in a
  • the base body 10 is a Kunststoffverguss having a cylindrical recess. On the base body 10 are on the of the
  • metal terminals arranged, with which the led out of the light guide 2 electrical connections of the semiconductor devices 3 can be electrically connected.
  • the recess of the main body 10 preferably has a mirror layer, for example a silver mirror layer, so that emitted from the semiconductor devices
  • Radiation targeted to the radiation decoupling surface 22 can be directed out.
  • aspherical transverse cylindrical radiators can also be advantageously produced as light guides 2, which are used in particular for near and far field flashlights.
  • light guides 2 which are used in particular for near and far field flashlights.
  • Aspherical transverse cylindrical radiator as a light guide is shown in the embodiment of Figure 13.
  • FIG. 13 is the same as the embodiment of FIG. 9B.
  • Figs. 14A to 14E are respectively schematic
  • the light guides 2 are each on one
  • Support plate 1 is arranged.
  • the device of the embodiment of Figure 14A has a plurality of radiation emitters
  • cylindrical light guide 2 are enclosed.
  • the cylindrical light guide 2 has cavities in which the semiconductor components are arranged.
  • the light guide 2 is directly connected to the carrier plate 1
  • FIG. 14A shows a view of an exemplary embodiment of a device in which the carrier plate 1
  • the carrier plate 1 is only in a region of the lateral surface 26 of the light guide second
  • Optical fiber 2 preferably mirrored, for example by means of a silver mirror.
  • the radiation output surface 22, however, preferably has radiation coupling-out structures, such as a roughening or
  • Radiation decoupling surface 22 opposite side of the device terminal contacts 6 are arranged, the
  • the radiation decoupling is shown by arrows in the embodiment of FIG. 4C.
  • FIG. 14C is the same as the embodiment of FIG. 3A.
  • semiconductor devices 3 are not arranged mirror-symmetrically to each other.
  • the arrangement of the individual semiconductor components of the exemplary embodiment of FIG. 14D coincides with the arrangement of the semiconductor components of the exemplary embodiment of FIGS. 4B and 4C.
  • FIG. 14B essentially the device of FIG.
  • Copper terminals mechanically mountable.
  • the device by means of these two terminals 11 mechanically, electrically and thermally connectable.
  • the copper terminals 11 are formed band-shaped.
  • FIG. 14E shows a cross section of the embodiment of the device from FIG. 14B.
  • Embodiment of Figure 14E differs from the embodiment of Figure 9B essentially in that the mechanical connection is ensured by means of a terminal 11, in particular a copper terminal.
  • FIG. 14F a module is shown, which consists of a
  • the module therefore has a plurality of transversal
  • Cylinder radiators 2 wherein a plurality of
  • Semiconductor devices 3 is used. As a result, it is possible in particular to produce a module which is particularly suitable for the backlighting of, for example, flat-panel displays, radiation sources for general lighting or for
  • the main emission direction 4 of the device and the
  • Principal emission directions 31 of the semiconductor components are shown as arrows in FIG. 14F.
  • the individual devices can be mounted in the module and thereby electrically
  • FIG. 15A shows a device which has a
  • Support plate 1 which contains a plurality of openings 14.
  • the support plate 1 is for example a
  • the carrier plate forms a
  • Main level 11 which lies in the xy plane.
  • a breakthrough is in particular a recess of the support plate 1 to understand in which no support plate material is arranged, in particular is completely removed.
  • the subregion of the carrier plate for example the
  • Support plate material in the region of a breakthrough thus not only bent out of the main plane 11, but completely removed.
  • the device further comprises a plurality of
  • the radiation-emitting semiconductor components 3 have a lateral expansion plane in the yz plane.
  • the semiconductor devices 3 are arranged vertically to the carrier plate 1. For example, stand the
  • Semiconductor devices 3 are each guided at least partially through an opening 14 of the support plate 1.
  • Support plate 1 is arranged. An electrical contacting of the semiconductor components takes place below the respective
  • the semiconductor components are each mounted vertically to the main plane 11 of the carrier plate 1 and are each provided with an extended electrical connection region 36 in each case in an opening 14 of the carrier plate 1
  • FIG. 15A shows the device before the process step of applying a light guide.
  • a trained according to the embodiment of Figure 15A device is advantageously formed particularly flat.
  • the device thus has an overall height of less than 2 mm.
  • the semiconductor components each emit radiation along the main plane 11 of the carrier plate 1.
  • the semiconductor components In a plan view of the device, the
  • Semiconductor devices 3 each have a small lateral
  • FIG. 15B shows a cross section of the exemplary embodiment of FIG. 15A.
  • the height H T of the support plate 1 is in a range between 0.2 mm and 1 mm.
  • a heat element 8 for example a metal plate, for
  • the heat element 8 is guided through the opening 14 of the support plate 1 and angularly connected to the underside of the support plate 1.
  • the semiconductor device 3 with the heat element 8 and / or the heat element 8 can thereby by means of metallic
  • the spring contacts are introduced in the opening 14 of the support plate 1.
  • the semiconductor devices may be heat coupled to the insides of the apertures of the carrier plate by means of a carrier.
  • the support plate for example, an Alu groundplatte with electrically insulated openings.
  • electrical insulation and electrical contacting find, for example, Kunststofftechniksein algorithms.
  • a multilayer ceramic with integrated conductors and functionalities can be used as a carrier plate.
  • Semiconductor device 3 shown, for example, for a device of the embodiments of Figures 15A and 15B is suitable.
  • Semiconductor device 3 has semiconductor layers 33 which are suitable for generating electromagnetic radiation.
  • the semiconductor layers 33 have a
  • Semiconductor component 3 has a first and a second contact, by means of which the semiconductor layers are electrically contactable.
  • the first and the second contact by means of printed conductors externally become electrically
  • the first contact, the second contact and the semiconductor layers are arranged on a common carrier 35, which in particular consists of an electric
  • insulating material contains, for example, silicon.
  • On a side facing away from the semiconductor layers 33 side of the carrier 35 can be integrated, for example, an angle-shaped metal reinforcement (not shown), the mechanical attachment to the contact of the
  • one conductor track 7 leads from the first contact and the second contact of the semiconductor component 3 to an underside of the carrier plate 1 and along the underside of the carrier plate 1.
  • Figure 16A is a schematic plan view of the
  • FIG. 16B shows a bottom view of the device according to FIG. 15A.
  • the first and the second contact of the semiconductor components are in this case by means of conductor tracks 7 externally connected electrically, which are guided on the underside of the carrier plate 1.
  • an electrical contact of a semiconductor device 3 is connected via a conductor track 7 with an electrical contact of an adjacent
  • a device is shown, for example, according to the exemplary embodiment of FIG. 15A, which additionally comprises a light guide 2.
  • the light guide 2 is designed as a light guide foil, for example as a diffuser foil.
  • the light guide 2 has no cavity for receiving the
  • silicone be executed (not shown).
  • the light guide is directly on the
  • Carrier plate arranged and envelops the individual components completely.
  • FIG. 17B is a cross section of an apparatus of FIG.
  • Embodiment of Figure 17A shown.
  • beam paths of the radiation emitted by the semiconductor components are shown by means of arrows. Due to the
  • Diffuser film 2 the radiation between the support plate 1 and diffuser film 2 are performed.
  • the radiation between the support plate 1 and diffuser film 2 are performed.
  • FIGS. 18A and 18B show views of a carrier plate 1 which can be used, for example, for a device according to the exemplary embodiment of FIG. 17A.
  • FIG. 18A shows a plan view of the carrier plate 1.
  • the carrier plate 1 is in particular for a device
  • Support plate on a plurality of openings, which lead through the support plate 1 and in particular are arranged symmetrically in the support plate 1.
  • the openings lead through the semiconductor components.
  • the support plate 1 may be rectangular, for example
  • Semiconductor devices 3 is a mirror symmetry and / or axis symmetry.
  • the thickness of the carrier plate 1 is for example about 0.5 mm.
  • the semiconductor components 21 each have, for example, a length Li of about 1.2 mm, preferably in a range between 1.1 mm and 1.3 mm.
  • the distances Di of the individual components 3 in the lateral direction to each other are approximately 20 mm. In the vertical direction, the
  • Semiconductor devices each have distances D2 to each other, which are for example about 10 mm.
  • the distance D3 is preferably in a range between 39 mm and 41 mm inclusive, for example 40 mm.
  • FIG. 18B shows a detail of the carrier plate 1, which is in particular in a region A marked by a dashed circle in the exemplary embodiment of FIG. 18A lies.
  • the semiconductor devices have a preferred
  • the conductor tracks 7 on the underside of the carrier plate 1 each have a width D 4 of about 0.4 mm and are arranged to each other at a distance A b of about 0.3 mm.
  • the invention is not limited by the description based on the embodiments of these, but includes each new feature and any combination of features, which in particular any combination of features in the

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
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  • Planar Illumination Modules (AREA)
  • Optical Couplings Of Light Guides (AREA)

Abstract

La présente invention concerne un dispositif émetteur de rayonnement comprenant un guide d'ondes optiques (2) et au moins une plaque support (1). La plaque support (1) forme un plan principal (11). Au moins un composant semi-conducteur émetteur de rayonnement (3) se trouve dans ou sur une partie courbée vers l'extérieur d'une plaque support (1). Une surface émettrice de rayonnement (32) du composant semi-conducteur (3) forme un angle α avec le plan principal (11) de la plaque support (1). Le guide d'ondes optiques (2) se trouve sur la face de la plaque support (1) qui fait face au composant semi-conducteur (3). L'invention concerne également un module comprenant un dispositif émetteur de rayonnement et un procédé de fabrication d'un dispositif émetteur de rayonnement.
PCT/EP2010/069520 2009-12-30 2010-12-13 Dispositif guide d'ondes optiques émetteur de rayonnement pour l'éclairage, module comprenant un tel dispositif et procédé de fabrication d'un tel dispositif WO2011080058A1 (fr)

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DE112010005057T DE112010005057A5 (de) 2009-12-30 2010-12-13 Strahlungsemittierende lichtleitervorrichtung für die beleuchtung, modul mit einer solchen vorrichtung und verfahren zur herstellung einer solchen

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DE102009060759A DE102009060759A1 (de) 2009-12-30 2009-12-30 Strahlungsemittierende Vorrichtung, Modul mit einer strahlungsemittierenden Vorrichtung und Verfahren zur Herstellung einer strahlungsemittierenden Vorrichtung

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013104902A1 (fr) * 2012-01-10 2013-07-18 Design Led Products Limited Panneau d'éclairage
US9825012B2 (en) 2012-08-15 2017-11-21 Epistar Corporation Light-emitting device
US11791370B2 (en) 2012-08-15 2023-10-17 Epistar Corporation Light-emitting device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012112763A1 (de) * 2012-12-20 2014-06-26 Osram Opto Semiconductors Gmbh Leuchtvorrichtung
DE102013102967A1 (de) * 2013-03-22 2014-09-25 Osram Opto Semiconductors Gmbh Beleuchtungsmodul mit Lichtleitkörper und Verfahren zum Herstellen eines Beleuchtungsmoduls
DE102019208308A1 (de) * 2019-06-06 2020-12-10 Heraeus Noblelight Gmbh Vorrichtung für eine lichtquelle einer druckmaschine mit einer vielzahl von lichtemittierenden halbleiterbauelementen einer ersten art und mindestens einem lichtemittierenden halbleiterbauelement einer weiteren art auf einem substrat

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10201045A1 (de) * 2001-01-16 2002-09-12 Visteon Global Tech Inc Flexibler LED-Schaltkreis zur Rückseitigen Durchleuchtung
WO2004001282A2 (fr) * 2002-06-25 2003-12-31 Samsung Electronics Co., Ltd. Support de fixation de lampe et ensemble de retroeclairage comprenant ce support
WO2005114273A1 (fr) * 2004-05-24 2005-12-01 Osram Opto Semiconductors Gmbh Procede de montage d'un systeme lumineux de surface, et systeme lumineux de surface
DE102006019373A1 (de) 2005-05-09 2006-11-23 Chunghwa Picture Tubes, Ltd. Substratfreie Flip Chip lichtemittierende Diode und Verfahren zu deren Herstellung
US20080111944A1 (en) * 2006-11-14 2008-05-15 Epson Imaging Devices Corporation Illuminating device, electro-optic device, and electronic apparatus
WO2008078077A1 (fr) * 2006-12-22 2008-07-03 Morton Graham Dispositif d'éclairage
DE102007004304A1 (de) 2007-01-29 2008-07-31 Osram Opto Semiconductors Gmbh Dünnfilm-Leuchtdioden-Chip und Verfahren zur Herstellung eines Dünnfilm-Leuchtdioden-Chips
US20090303410A1 (en) * 2008-06-09 2009-12-10 Hitachi, Ltd. Display apparatus and back light unit to be used therefor

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4007340B2 (ja) * 2003-09-19 2007-11-14 セイコーエプソン株式会社 電気光学装置、電子機器及び電気光学装置の製造方法
DE102008012844A1 (de) * 2007-11-30 2009-06-04 Osram Opto Semiconductors Gmbh Beleuchtungseinrichtung sowie Verfahren zur Herstellung einer Beleuchtungseinrichtung
JP2009295560A (ja) * 2008-05-02 2009-12-17 Citizen Electronics Co Ltd 面状光源及び液晶表示装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10201045A1 (de) * 2001-01-16 2002-09-12 Visteon Global Tech Inc Flexibler LED-Schaltkreis zur Rückseitigen Durchleuchtung
WO2004001282A2 (fr) * 2002-06-25 2003-12-31 Samsung Electronics Co., Ltd. Support de fixation de lampe et ensemble de retroeclairage comprenant ce support
WO2005114273A1 (fr) * 2004-05-24 2005-12-01 Osram Opto Semiconductors Gmbh Procede de montage d'un systeme lumineux de surface, et systeme lumineux de surface
DE102006019373A1 (de) 2005-05-09 2006-11-23 Chunghwa Picture Tubes, Ltd. Substratfreie Flip Chip lichtemittierende Diode und Verfahren zu deren Herstellung
US20080111944A1 (en) * 2006-11-14 2008-05-15 Epson Imaging Devices Corporation Illuminating device, electro-optic device, and electronic apparatus
WO2008078077A1 (fr) * 2006-12-22 2008-07-03 Morton Graham Dispositif d'éclairage
DE102007004304A1 (de) 2007-01-29 2008-07-31 Osram Opto Semiconductors Gmbh Dünnfilm-Leuchtdioden-Chip und Verfahren zur Herstellung eines Dünnfilm-Leuchtdioden-Chips
US20090303410A1 (en) * 2008-06-09 2009-12-10 Hitachi, Ltd. Display apparatus and back light unit to be used therefor

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2013104902A1 (fr) * 2012-01-10 2013-07-18 Design Led Products Limited Panneau d'éclairage
CN104114939A (zh) * 2012-01-10 2014-10-22 Led产品设计有限公司 照明面板
US9825012B2 (en) 2012-08-15 2017-11-21 Epistar Corporation Light-emitting device
US10083945B2 (en) 2012-08-15 2018-09-25 Epistar Corporation Light-emitting device
US10319703B2 (en) 2012-08-15 2019-06-11 Epistar Corporation Light bulb
US10593655B2 (en) 2012-08-15 2020-03-17 Epistar Corporation Light bulb
US10720414B2 (en) 2012-08-15 2020-07-21 Epistar Corporation Light bulb
US10886262B2 (en) 2012-08-15 2021-01-05 Epistar Corporation Light bulb
US11791370B2 (en) 2012-08-15 2023-10-17 Epistar Corporation Light-emitting device

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