WO2009152908A2 - Puce électroluminescente et dispositif électroluminescent doté d'une telle puce - Google Patents

Puce électroluminescente et dispositif électroluminescent doté d'une telle puce Download PDF

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Publication number
WO2009152908A2
WO2009152908A2 PCT/EP2009/003506 EP2009003506W WO2009152908A2 WO 2009152908 A2 WO2009152908 A2 WO 2009152908A2 EP 2009003506 W EP2009003506 W EP 2009003506W WO 2009152908 A2 WO2009152908 A2 WO 2009152908A2
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WO
WIPO (PCT)
Prior art keywords
light
chip
semiconductor structure
lighting device
luminous
Prior art date
Application number
PCT/EP2009/003506
Other languages
German (de)
English (en)
Other versions
WO2009152908A3 (fr
Inventor
Frederic Tonhofer
Original Assignee
Setrinx Sarl
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Setrinx Sarl filed Critical Setrinx Sarl
Priority to EP09765488A priority Critical patent/EP2283525A2/fr
Publication of WO2009152908A2 publication Critical patent/WO2009152908A2/fr
Publication of WO2009152908A3 publication Critical patent/WO2009152908A3/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0013—Means for improving the coupling-in of light from the light source into the light guide
    • G02B6/0015—Means for improving the coupling-in of light from the light source into the light guide provided on the surface of the light guide or in the bulk of it
    • G02B6/002—Means for improving the coupling-in of light from the light source into the light guide provided on the surface of the light guide or in the bulk of it by shaping at least a portion of the light guide, e.g. with collimating, focussing or diverging surfaces
    • G02B6/0021—Means for improving the coupling-in of light from the light source into the light guide provided on the surface of the light guide or in the bulk of it by shaping at least a portion of the light guide, e.g. with collimating, focussing or diverging surfaces for housing at least a part of the light source, e.g. by forming holes or recesses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0013—Means for improving the coupling-in of light from the light source into the light guide
    • G02B6/0023—Means for improving the coupling-in of light from the light source into the light guide provided by one optical element, or plurality thereof, placed between the light guide and the light source, or around the light source
    • G02B6/003—Lens or lenticular sheet or layer
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0066—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form characterised by the light source being coupled to the light guide
    • G02B6/0073—Light emitting diode [LED]
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/0001—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems
    • G02B6/0011—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings specially adapted for lighting devices or systems the light guides being planar or of plate-like form
    • G02B6/0013—Means for improving the coupling-in of light from the light source into the light guide
    • G02B6/0023—Means for improving the coupling-in of light from the light source into the light guide provided by one optical element, or plurality thereof, placed between the light guide and the light source, or around the light source
    • G02B6/0031—Reflecting element, sheet or layer
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/24—Coupling light guides
    • G02B6/42—Coupling light guides with opto-electronic elements
    • G02B6/4298—Coupling light guides with opto-electronic elements coupling with non-coherent light sources and/or radiation detectors, e.g. lamps, incandescent bulbs, scintillation chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/385—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape the electrode extending at least partially onto a side surface of the semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements

Definitions

  • the invention relates to a light chip with
  • the invention relates to a lighting device with
  • Bond area comprises
  • semiconductor structures made of wafer material used in such luminous chips are constructed on the carrier substrate, for example a layer of sapphire glass, by means of photolithographic and / or dry-etching methods known per se. Due to the carrier substrate, the light-emitting chip obtains its mechanical stability, since the pure wafer material is very brittle.
  • the carrier substrate for example a layer of sapphire glass
  • the light-emitting chip obtains its mechanical stability, since the pure wafer material is very brittle.
  • individual or a plurality of semiconductor structures constructed in this way are cut out as individual light-emitting chips, which are also referred to as LED chips, with which the corresponding number of carrying carrier substrates are cut so that they can be installed as individual light-emitting chips in a lighting device.
  • a separate semiconductor structure or a single light-emitting chip must be wired in a separate production step by means of a bonding device in a manner known per se, wherein a connection conductor which can be connected to a voltage source is wired directly to one of the bond regions of the semiconductor structure.
  • the bonding wires used are extremely thin and vulnerable, so the LED chip must be encapsulated immediately after bonding to protect the wire bond.
  • the object of the invention is to provide a light chip of the type mentioned, which is less sensitive to handling and can be installed easily after its preparation.
  • the carrier substrate carries a contact layer on at least one surface region projecting beyond the semiconductor structure, which contact layer is electrically conductively connected to the bonding region of the semiconductor structure.
  • the useful surface of the carrier substrate is thus not only used to receive the semiconductor structure, but also used as a substrate for a contact layer. About this Clock layer, the light chip can then be electrically connected. If the contact layer is chosen to be sufficiently large, this connection can be made via more secure and more stable electrical connections with respect to fine bonding wires.
  • the contact layer is arranged on a surface area of the carrier substrate projecting beyond the semiconductor structure.
  • the contact layer can have the same spatial orientation as the bonding region of the semiconductor structure connected to it.
  • the contact layer extends substantially parallel to the bonding region of the semiconductor structure connected to it.
  • the contact layer is obtained by vapor deposition of a metal or a metal alloy, in particular a copper alloy, a gold alloy, a silver alloy or an aluminum alloy , In this case, known and established techniques can be used.
  • the contact layer offers a contact surface which has an areal extent of from about 20% to about 80%, preferably from about 30% to about 70%, more preferably about 40 % to about 60%, and more preferably about 50% of the area of the largest active confinement surface of the semiconductor structure. In this way, a contact surface which can be contacted well in relation to the size of the semiconductor structure is available.
  • a good and lasting electrical connection between the contact layer and a bonding region can be achieved by the contact layer being connected to the bonding region connected to it by means of an electrically conductive material web.
  • the material web comprises metal particles, in particular copper or silver particles, or a mixture thereof.
  • the metal particles are homogeneously distributed in a carrier material, in particular a two-component material, preferably a two-component adhesive.
  • a carrier material in particular a two-component material, preferably a two-component adhesive.
  • Such a material web can be printed, for example, in a conventional manner on the light chip.
  • the material web can advantageously be obtained by vapor deposition of a metal or a metal alloy, in particular a copper alloy, a gold alloy, a silver alloy or an aluminum alloy.
  • the carrier substrate has a thickness which is approximately 10 times to approximately 10 times, preferably 20 times to approximately 30 times, the height of the semiconductor structure.
  • the luminescent chip also satisfies relatively high demands on its mechanical stability.
  • connection device is electrically conductively connected to the contact layer of the luminous chip.
  • the electrical wiring of the luminous chip with the connection device can thus be present via the contact layer via stable and permanent connections and no longer has to be done directly by way of fine bonding wires via the bond regions of the semiconductor structure.
  • the luminous chip is carried by a printed circuit board, wherein the connecting device is designed as a connecting track on the printed circuit board.
  • the connecting device is designed as a connecting track on the printed circuit board.
  • a plurality of light-emitting chips can be arranged on a single printed circuit board, so that a high-luminance module can be created.
  • a good and optionally large-area lighting effect can be achieved if a light guide element is provided and the light-emitting chip is arranged such that light emitted by it is coupled into the light guide element.
  • the light guide element is plate-shaped.
  • the light chip can be arranged laterally next to a narrow surface of the light guide element, so that a main surface of the light guide plate can be used completely as a light source.
  • the light chip is arranged in a groove which is provided in a main surface of the light guide element.
  • At least one side of the light-emitting chip is at least partially opposite a reflection layer which reflects light emitted by the light-emitting chip in the direction of the interior of the light guide element.
  • the light-emitting chip is at least partially coupled to the light guide element via a light-conducting material.
  • the photoconductive material is a silicone material, in particular a silicone oil, heat can advantageously be removed from the luminous chip at the same time.
  • the wavelength of the light emitted by the light-emitting chip does not coincide with a desired wavelength, this can be adjusted by the light-emitting device comprising a phosphor layer in which phosphor particles are preferably homogeneously distributed, which absorb light emitted by the light-emitting chip and in turn light of a different wavelength emit.
  • Such phosphor particles comprise phosphors and absorb radiation impinging on them and emit radiation at least in another (longer) wavelength. With a suitable choice of phosphor particles or phosphor particle mixtures, therefore, the radiation emitted by the light chip can be converted into radiation with a different spectrum. In order to support the dissipation of heat generated by the light-emitting chip, it is favorable if it is connected to a heat sink in a heat-conducting manner.
  • the light device can generate light in a multiplicity of mixed colors.
  • the first color is red
  • the second color is green
  • the third color is blue. In this way, light can be generated in almost all colors of the visible spectrum.
  • FIG. 1 shows a side view of a first exemplary embodiment of a light-emitting chip with a semiconductor structure
  • Figure 2 is a plan view of the light chip of Figure 1;
  • FIG. 3 shows a side view of a second exemplary embodiment of the luminous chip, wherein it comprises two semiconductor structures
  • Figure 4 is a plan view of the luminous chip of Figure 3;
  • FIG. 5 is a plan view of a first lighting unit, which comprises three light-emitting chips of FIG. 1 connected in parallel electrically via two connecting paths;
  • FIG. 6 shows a plan view of a second lighting unit, in which four light-emitting chips according to FIG. 1 are arranged alternately on opposite sides of two connecting lines;
  • Figure 7 is a plan view of a third lighting unit, which comprises three electrically connected in series light chips according to Figure 1;
  • FIG 8 shows a section of a fourth lighting unit, in which a printed circuit board is equipped on one side with a plurality of light-emitting chips according to Figure 1, along the section lines VI II-VI I I in Figures 9 and 10.
  • Figure 9 is a plan view of the equipped with the light emitting contact side of the circuit board of Figure 8.
  • FIG. 10 shows a plan view of the side of the printed circuit board of FIG. 8 opposite the contact side
  • FIG. 11 shows a plan view corresponding to FIG. 9 of a fifth lighting unit
  • FIG. 12 shows a plan view corresponding to FIGS. 9 and 11 of a sixth lighting unit
  • Figure 13 is a plan view of a lighting element with a
  • Light guide plate in the edge of which light is coupled by means of a lighting unit
  • FIG. 14 shows a section of the luminous element according to FIG. 13 along the section line XIV-XIV there;
  • Figure 15 is a section of a modified luminous element with a light guide plate in which a lighting unit is arranged in a groove in a light guide plate.
  • FIGS. 1 and 2 designates a luminescent chip as a whole, which comprises a semiconductor structure 12.
  • the semiconductor structure 12 is composed of three layers.
  • a lying in Figure 1 below layer 14 is an n-conducting layer, which z. B. of n-GaN or n-InGaN.
  • a middle layer 16 is an MQW layer.
  • MQW is the abbreviation for "Multiple Quantum Well”.
  • An MQW material is a superlattice which has an electronic band structure modified according to the superlattice structure and accordingly emits light at other wavelengths. The choice of the MQW layer can influence the spectrum of the radiation emitted by the p-n semiconductor structure 12.
  • An upper layer 18 is made of a p-type III-V semiconductor material, for example of p-GaN.
  • the semiconductor structure 12 has a circumferential U-shaped circumferential step 20, the step surface 22 extends at a distance from the MQW layer 16. In this way, the n-conductive layer 14 projects laterally beyond the MQW layer 16 and the p-conductive layer 18 in the region of the step surface 22.
  • Step surface 22 is covered by a correspondingly U-shaped vapor-deposited conductor track 24 with two electrically parallel conductor tracks 24a and 24b and a conductor track 24c extending perpendicularly thereto (see FIG. 2).
  • the conductor 24c forms an n-bond region to the n-type layer 14.
  • a conductor 28 vapor-deposited which forms a p-bond region to the p-type layer 18.
  • three interconnects 30a, 30b, 30c extending side by side extend into the region 26 of the p-type layer 18.
  • the free ends of the two outer conductor tracks 30a and 30c are angled in each case by 90 ° in the direction of the middle conductor track 30b, as can be clearly seen in FIG.
  • the formation of the conductor tracks for contacting the semiconductor structure 12 may vary depending on the field of application and performance of the semiconductor structure and be adapted to certain requirements to be met, as it is known per se. In principle, any known semiconductor structure which emits light when voltage is applied can be installed in the luminous chip 10.
  • the region 26 of the semiconductor structure 12 has a gain of 280 ⁇ m ⁇ 280 ⁇ m to 1 800 ⁇ m ⁇ 1 800 ⁇ m.
  • the height of the semiconductor structure 12 is about 5 microns to 10 microns.
  • the tracks 24a, 24b and 24c are obtained by vapor deposition of a copper-gold alloy. Alternatively, silver or aluminum alloys may also be used. Gold may be provided in the region of the n-bond region 24c and the p-bond region 28, which is doped in a manner known per se for connection to a p-conductive layer or an n-conductive layer.
  • the semiconductor structure 12 is supported by a carrier substrate 32.
  • the carrier substrate 32 may be sapphire glass, which is also known by the name of corundum glass (Al 2 O 3 -GlS).
  • the support substrate 32 has a thickness of about 100 ⁇ m to 150 ⁇ m However, it can also have other thicknesses, which may be between 5 .mu.m and 600 .mu.m, for example.
  • the carrier substrate 32 may also be formed by undoped wafer material on which the semiconductor structure 12 is constructed with techniques known per se. In this case, the semiconductor structure 12 is integrally connected to the carrier substrate 32.
  • the carrier substrate 32 terminates flush with the semiconductor structure 12 on the respective side with the conductor tracks 24a and 24b.
  • the carrier substrate 32 is respectively provided with a first area region 34 and a second area region 36 over the semiconductor structure 12 above.
  • the carrier substrate carries in each case a first contact layer 38 and a second contact layer 40, which are obtained by vapor deposition of a copper-gold alloy.
  • a first contact layer 38 and a second contact layer 40 which are obtained by vapor deposition of a copper-gold alloy.
  • the first contact layer 38 is electrically conductively connected to the p-bond region 28 of the semiconductor structure 12 by means of a first material web 42 made of an electrically conductive material.
  • the second contact layer 40 is electrically conductively connected by means of a second material web 44 made of an electrically conductive material to the n-bonding region 24c of the semiconductor structure 12.
  • the first and second material webs 42, 44 can be obtained, for example, by curing a viscous electrically conductive material.
  • the material of the material webs 42, 44 for example, copper or silver particles or a mixture thereof may be homogeneously distributed.
  • a support material for example, a two-component material, such as a two-component adhesive, into consideration.
  • the material webs 42, 44 may alternatively also be obtained by vapor deposition of a copper-gold alloy, silver or aluminum alloys, or optionally doped gold.
  • first and second contact surface 46 and a second contact surface 48 remain in the first and second contact layers 38 and 40, respectively.
  • the first and the second contact surface 46, 48 are different in size in the embodiments shown here, but may also be the same size.
  • a dielectric 52 is provided, which prevents a conductive connection between the individual layers 14, 16 and 18 of the semiconductor structure 12.
  • the light-emitting chip 10 is formed in this way as a rather robust structural unit, which can be connected via its first and its second contact surface 46 and 48 with acipsguel- Ie.
  • a modified light chip 10 ' is shown in FIGS. 3 and 4, components which correspond to components of the light chip 10 bearing the same reference numerals.
  • two semiconductor structures 12a and 12b are electrically connected in series, including the conductor track 24c of are connected in the figures 3 and 4, the left semiconductor structure 12a to the circuit surface 28 of the second semiconductor structural ⁇ tur 12b via a third web of material 54 electrically conductive, which bridges the distance between the semiconductor structures 12a and 12b. This is in the order of 100 microns.
  • the third web of material 54 may be formed of one of the materials discussed above with respect to the first and second webs of material 42 and 44.
  • the first contact layer 38 having the first contact surface 46 adjacent to the p-bonding region 28 side of the semiconductor structure 12a and the second contact layer 40 including the second contact surface 48 adjacent to the n-bonding region 24c side of the semiconductor structure 12b arranged.
  • FIG. 5 shows a first lighting unit 56.
  • this lighting unit 56 three light-emitting chips 10a, 10b and 10c are electrically connected in parallel.
  • the first contact layers 38 of the three light-emitting chips 10a, 10b, 10c are electrically conductively connected to one another via a first connection track 58, which may be rigid or flexible.
  • the first connection track 58 is soldered to the first contact surfaces 46 of the three light-emitting chips 10a, 10b, 10c or adhesively bonded by means of an adhesive conductor paste known per se.
  • the second contact layers 40 of the three light-emitting chips 10a, 10b, 10c are electrically conductively connected to one another via a second connection track 60, which may also be rigid or flexible.
  • the second connection track 60 is soldered or electrically conductively bonded to the second contact surfaces 48 of the three light-emitting chips 10a, 10b, 10c.
  • FIG. 6 shows a modified second lighting unit 62 in which four light-emitting chips 10a, 10b, 10c and 10d are electrically connected in parallel as explained above.
  • every second lighting chip 10b and 10d or 10a and 10c on the other side of the connecting paths 58 and 60 are connected to these as each first lighting chip 10a and 10c or 10b and 10d , In this way, the efficiency of the light emission of the lighting element 62 in the space opposite the first lighting unit 56 can be increased.
  • the light-emitting chips 10a and 10c are arranged so that their
  • Contact surfaces 46 and 48 have in the same direction as the active surface 50 of the light emitting diodes 10b and 10d.
  • FIG. 7 shows a third lighting unit 64.
  • three light-emitting chips 10a, 10b and 10c are connected by means of two printed circuit boards.
  • NEN 66a, 66b electrically connected in series.
  • the first contact layer 38 of the light chip 10a is connected to a first connection track 68 and the second contact layer AO of the third light chip 10c is connected to a second connection track 70.
  • the connection tracks 68 and 70 can then be connected to the terminals of a voltage source.
  • FIGS. 8, 9 and 10 show a fourth lighting unit 72, in which a rigid elongated printed circuit board 74 made of plastic is equipped with a plurality of light-emitting chips 10, wherein three light-emitting chips 10a, 10b and 10c can be seen.
  • the printed circuit board IA has perforations 76 at regular intervals, which are large enough for a respective semiconductor structure 12 to be accommodated therein.
  • U-shaped printed conductors 80 are applied between the openings 76, which are e.g. can be obtained by vapor deposition of copper-gold alloys o- or silver or aluminum alloys.
  • an elongated connection track 82 is provided, of which only one can be seen in FIGS. 8 to 10.
  • the light-emitting chips 10 are arranged on the printed circuit board 74 in such a way that their semiconductor structures 12 each protrude into an opening 76 (cf., FIG. 8) and are electrically connected in series via the conductor tracks 80 and the connection tracks 82. In the case of a suitably adapted course of the conductor tracks 80, of course, an electrical parallel connection of the light-emitting chips 10 is also possible.
  • FIG. 10 shows a view of the side 84 of the printed circuit board 74 opposite its firing side 78. Due to the openings 76 in the circuit board 74, the fourth light unit 72 also emit light on this page 84.
  • FIG. 11 shows a fifth lighting unit 86, in which components which correspond to components of the fourth lighting unit 72 bear the same reference numerals.
  • the fifth lighting unit 86 two light-emitting chips 10a and 10b are electrically connected in series via a single U-shaped conductor 80 and the connection tracks 82.
  • the base leg 80a of the U-shaped conductor track 80 is pulled longer in relation to the conductor tracks 80 of the fourth light-emitting unit 72, so that the legs 80b and 80c extend at a greater distance from one another than there.
  • an opening 88 is provided in the printed circuit board 74, whereby material can be saved in the production of the printed circuit board 74.
  • a sixth lighting unit 90 is shown, which substantially corresponds to the fifth lighting unit 86, but three lighting chips 10a, 10b and 10c are electrically connected in series via the conductor tracks 80 and the connecting tracks 82.
  • FIGS. 13 and 14 show a first lighting unit 92 with a luminous structure 94, which comprises a holder 96 which carries a lighting unit 95, which is formed by one of the first to sixth lighting units 56, 62, 64, 72, 86 or 90 can.
  • the connection of the luminous structure 94 to a voltage source is known per se, for which reason it will not be discussed in more detail here.
  • the lighting unit 92 comprises a planar light guide plate 98 made of transparent acrylic glass.
  • the light guide plate 98 may also be made of another homogeneous translucent material, such as a glass or an epoxy resin.
  • the light guide plate 98 is preferably clear.
  • the light guide plate 98 On a narrow surface 100, the light guide plate 98 carries a housing 102 having a parabola-shaped housing wall 104 and here not specifically provided with a reference numeral end walls, which define an interior space 106. In this, the luminous structure 94 is arranged.
  • the inner space 106 of the housing 102 is filled with a light-conducting liquid in the form of liquid silicone oil 108, which is indicated in FIG. 14 and guides light emitted by the luminous structure 94 to the narrow area 100 of the light guide plate 98. At the same time, heat generated by the luminous structure 94 is dissipated to the outside of the housing wall 104 of the housing 102 by the silicone oil 108.
  • the holder 96 of the luminous structure 94 is made of a good heat-conducting material and heat-conductively coupled to the housing wall 104, which in turn is also made of good heat-conducting material.
  • the housing wall 104 On its outer side 110, the housing wall 104 carries a heat sink 112, which absorbs the heat and releases it to the outside.
  • the inner side 114 of the housing 22 is provided with a reflection layer 116, whereby light, which is first emitted by the light-emitting structure 94 in a direction away from the light guide plate 98, is reflected onto the same or its narrow surface 100. This is indicated in FIG. 14 by an arrow 118.
  • a coupling device 120 Arranged on the narrow surface 100 of the light guide plate 98 is a coupling device 120, which is bounded on the outside by the housing 102. This includes one of the narrow surface 100 of the light guide plate 98 immediately adjacent lens plate 122, which comprises a plurality of plano-convex converging lenses 124 and is made for example of acrylic glass. By means of the collecting lenses 124, light emitted by the luminous structure 94 is collimated into the optical waveguide plate 98.
  • the coupling device 120 comprises a phosphor layer 126 which, viewed in the direction of the narrow surface 100 of the light guide plate 98, is arranged in front of the lens plate 122.
  • This comprises fine phosphor particles 128 which are homogeneously distributed in silicone oil not specifically provided with a reference numeral.
  • the phosphor particles 128 are made of color centered transparent solid state materials.
  • the phosphor particles 128 can also each be a mixture of several different types of phosphor particles.
  • the semiconductor structures 12 of the luminescent chips 10 made of p-GaN / n-InGaN emit ultraviolet light and blue light in a wavelength range of 420 nm to 480 nm when a voltage is applied.
  • the radiation emitted by the luminous structure 94 can thus be converted into radiation with a spectrum which is adapted to a desired spectrum; e.g. can be generated as white light.
  • the illumination unit 92 emits blue light.
  • the coupling device 120 further comprises a thin acrylic plate 130, which is prevented with that
  • Phosphor particles 128 provided silicone oil of the phosphor layer 126 is mixed with the silicone oil 108 in the interior 106 of the housing 102.
  • Lighting unit 92 are each provided on further narrow surfaces of the light guide plate 98 in a corresponding manner lighting structures 94.
  • the housing 102 may be between a few mm and several cm wide so that it can cooperate with a correspondingly thick light guide plate 98 in each case. At the top, this width can be e.g. It can be up to three cm, but it can also be over it, depending on the desired application.
  • FIG. 15 shows a second illumination unit 132, in which components which correspond to those of the first illumination unit 92 are provided with the same reference numerals.
  • the luminous structure 94 is arranged in a groove 134 which is provided in a main surface 136 of the lightguide plate 98.
  • a coupling device 120 is provided at each groove wall 138, 140.
  • a reflection film 144 is mounted, which within the light guide plate 98 extending radiation, which strikes the reflective film 114, reflected back into the light guide plate 98 back.
  • the groove 134 is closed by a cover 150, through which the holder 96 of the light-emitting structure 94 is connected in a heat-conducting manner to a cooling plate 152 attached to the outside of the light guide plate 98.
  • the groove 134 is filled with silicone oil 108, which dissipates heat generated by the luminous structure 94 toward the cover 150.
  • the cover 150 carries a reflection layer 154 on its side pointing toward the groove bottom 142. Radiation emitted by the luminous structure 94 is emitted by the reflection surfaces 146, 148 and the reflection layer 154 and is not emitted in the direction of the coupling devices 120 or groove walls 138, 140 , deflected in the direction of the coupling devices 120. This is illustrated in FIG. 15 by the arrow 118 indicating a ray trajectory.
  • a light chip 10 can be electrically connected without having to resort to the susceptible wire bonding.
  • the connection to electrical system can be made by safer methods and more reliable electrical connections, such as soldering and soldering.
  • a light chip 10, 10 ' is so robust that it can be handled like an SMD component known from electronics, that is, for example, as a resistor or a capacitor.
  • the contact layers 38 and 40 in conjunction with the material webs 42 and 44, so that a light chip 10, 10 'optionally also without heat dissipation via a heat-conductive liquid, as used in the lighting units 92 and 132 , can be used.
  • the contact layers 38 and 40 may optionally be connected to a heat sink in a heat-conducting manner.
  • the emission surface of the luminous chip 10, 10 ' is at the base of the carrier substrate 32 is increased. This emits light over its entire outer surface remote from the semiconductor structure 12. If necessary, this surface can be roughened, so that in addition scattering effect can be used.
  • a light chip 10, 10 'as a component can be freely worn, which is apparent from the light units 56, 62, 64, 72, 86 or 90.
  • the light units 56, 62, 64, 72, 86 and 90 each have a plurality of light chips 10 are available. These can have different semiconductor structures 12 which emit in the red, green and blue, whereby the lighting units 56, 62, 64, 72, 86 and 90 each form RGB lighting units. If the lighting unit 95 of the lighting units 92 or 132 is formed from such RGB lighting units 56, 62, 64, 72, 86 or 90, then the lighting unit 92 or 132 dispenses with the phosphor layer 126 with the phosphor particles 128 and instead a diffusion layer 156, as it is known per se, for example in the form of a film. This is indicated in FIGS. 14 and 15 by the reference numeral 156 in brackets. White light is used in this case by that red, green and blue light of the corresponding light-emitting phosphor chip 10 is mixed.
  • the layer 126 is formed without phosphor particles 128 from, for example, silicone oil and possibly additionally the diffusion layer 156 is provided.
  • the lighting units 56, 62, 64, 72, 86 or 90 are formed as RGB lighting units
  • two adjacent light-emitting chips 10 are arranged in one embodiment at a distance of 3 mm to 7 mm, preferably 5 mm from each other.
  • luminous chips 10 of individual colors can emit light in only one direction, they can alternatively be arranged alternately on opposite sides of a carrier medium in order to obtain radiation in all spatial directions by the lighting unit 95.

Abstract

L'invention concerne une puce électroluminescente comprenant au moins une structure semi-conductrice (12), qui émet de la lumière lorsqu'une tension est appliquée à ses bornes et comporte au moins une zone de connexion (28, 24c), ainsi qu'un substrat de support (32) supportant la structure semi-conductrice (12). Le substrat de support (32) comporte, sur au moins une zone de surface (34, 36) faisant saillie de la structure semi-conductrice (12), une couche de contact (38, 40) reliée de manière électriquement conductrice à la zone de connexion (28, 24c) de la structure semi-conductrice (12). L'invention concerne également un dispositif électroluminescent (56; 62; 64; 72; 86; 90; 92; 132) comportant au moins une structure semi-conductrice (12), qui émet de la lumière lorsqu'une tension est appliquée à ses bornes et comporte au moins une zone de connexion (28, 24c), ainsi qu'au moins un dispositif de raccordement (58, 60; 68, 70; 82) pouvant être relié à une source de tension et relié de manière électriquement conductrice à la zone de connexion (28, 24c) de la structure semi-conductrice (12). Au moins une puce électroluminescente (10, 10') selon une des revendications 1 à 10 est prévue, le dispositif de raccordement (58, 60; 68, 70; 82) étant relié de manière électriquement conductrice à la couche de contact (38, 40) de la puce électroluminescente (10, 10').
PCT/EP2009/003506 2008-05-27 2009-05-16 Puce électroluminescente et dispositif électroluminescent doté d'une telle puce WO2009152908A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
EP09765488A EP2283525A2 (fr) 2008-05-27 2009-05-16 Puce électroluminescente et dispositif électroluminescent doté d'une telle puce

Applications Claiming Priority (2)

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DE102008025318.9 2008-05-27
DE102008025318A DE102008025318A1 (de) 2008-05-27 2008-05-27 Leuchtchip und Leuchtvorrichtung mit einem solchen

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WO2009152908A2 true WO2009152908A2 (fr) 2009-12-23
WO2009152908A3 WO2009152908A3 (fr) 2010-09-23

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EP (1) EP2283525A2 (fr)
DE (1) DE102008025318A1 (fr)
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WO (1) WO2009152908A2 (fr)

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TWI523269B (zh) 2012-03-30 2016-02-21 晶元光電股份有限公司 發光元件
CN103378254B (zh) * 2012-04-27 2017-07-21 晶元光电股份有限公司 发光元件
TWI626395B (zh) 2013-06-11 2018-06-11 晶元光電股份有限公司 發光裝置

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TW201013980A (en) 2010-04-01
WO2009152908A3 (fr) 2010-09-23
EP2283525A2 (fr) 2011-02-16
DE102008025318A1 (de) 2009-12-10

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