WO2012175385A1 - Dispositif d'éclairage à del et procédé de production d'un dispositif d'éclairage à del - Google Patents

Dispositif d'éclairage à del et procédé de production d'un dispositif d'éclairage à del Download PDF

Info

Publication number
WO2012175385A1
WO2012175385A1 PCT/EP2012/061197 EP2012061197W WO2012175385A1 WO 2012175385 A1 WO2012175385 A1 WO 2012175385A1 EP 2012061197 W EP2012061197 W EP 2012061197W WO 2012175385 A1 WO2012175385 A1 WO 2012175385A1
Authority
WO
WIPO (PCT)
Prior art keywords
lighting device
carrier
led chip
led lighting
led
Prior art date
Application number
PCT/EP2012/061197
Other languages
German (de)
English (en)
Inventor
Robert Kraus
Original Assignee
Osram Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Osram Ag filed Critical Osram Ag
Publication of WO2012175385A1 publication Critical patent/WO2012175385A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/18—High density interconnect [HDI] connectors; Manufacturing methods related thereto
    • H01L24/19—Manufacturing methods of high density interconnect preforms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
    • H01L2224/12105—Bump connectors formed on an encapsulation of the semiconductor or solid-state body, e.g. bumps on chip-scale packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73267—Layer and HDI connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12041—LED
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/507—Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body

Definitions

  • LED lighting device and method for manufacturing an LED lighting device
  • the invention relates to an LED lighting device with a carrier which is equipped with at least one light-emitting diode (LED) chip.
  • the invention further relates to a method for producing such an LED lighting device.
  • the LED chip which has an electrical contact on the underside, adhesively bonded to a bottom surface or
  • LEDs Light-emitting conversion light-emitting diodes (LEDs) in or below this casting are typically additionally a wavelength-converting phosphor
  • an LED lighting device comprising a carrier, wherein: the carrier is equipped with at least one LED chip, a light exit surface of the at least one LED chip faces the carrier and the carrier at least in the region of at least one LED chip Chips is translucent.
  • the carrier is equipped with at least one LED chip
  • a light exit surface of the at least one LED chip faces the carrier and the carrier at least in the region of at least one LED chip Chips is translucent.
  • this LED lighting device has an increased efficiency (in lm / W). Also, such an LED lighting device is very compact and in particular has a low height.
  • the light exit surface of the at least one LED chip faces the carrier, it radiates from the associated at least one light exit surface
  • the carrier On a transparent potting for the at least one LED chip, which is very precise and expensive to apply, can be dispensed with. In addition, the LED chip is reliably protected by the carrier.
  • An LED chip may, in particular, be understood to mean an unpacked LED chip. Under a LED chip can
  • OLED organic LEDs
  • the LED chip may be a volume emitter, e.g. a sapphire LED.
  • the LED chip may alternatively be a surface emitter, e.g. based on ThinGaN (including InGaN or AlInGaP, etc.
  • Light emitting surface of a light emitting diode LED chip is not limited and may, for example, IR light, red light, orange light, yellow light, green light, blue light, UV light, etc. correspond. Are several LED Chips present, these light can radiate a same color or light of different color.
  • the carrier may consist of glass, which is inexpensive and easy to shape.
  • the carrier may be made of a translucent plastic and thus can be made simple and inexpensive (e.g.
  • the carrier may be made of silicone, which is, for example, resistant to radiation, flexible (flexible) and inexpensive.
  • the carrier may be made of resin, especially epoxy resin.
  • the carrier may consist of indium tin oxide (ITO), which is electrically conductive.
  • the carrier may in particular be plate-shaped.
  • the carrier is transparent at least for the light emerging from the light exit surface. So a particularly high efficiency can be achieved.
  • the carrier may in particular be completely transparent, which further increases efficiency.
  • the carrier may be made of frosted glass or milky white silicone. It is yet another embodiment that the
  • Phosphor layer rests on the support.
  • at least one phosphor layer is present between the light exit surface and the carrier.
  • the light emerging from the light exit surface is at least partially converted or converted with respect to its wavelength by the at least one phosphor present in the phosphor layer, in particular in the direction of a larger one
  • wavelength-converted light and optionally non-wavelength-converted light emerging from the light exit surface are emitted by the LED lighting device.
  • primary light For example, that may be
  • Primary light be blue light, which is partially converted into yellow light, so that the LED lighting device emits a blue-yellow or white mixed light.
  • blue primary light may be partially converted to red light and partially to green light (by means of two
  • Primary light turns into red, green and blue light
  • the white mixed light likes warm white mixed light or cold white
  • any solid material may be designated which by excitation with light (including ultraviolet light) can produce visible light and / or infrared light.
  • Wavelength conversion may be based in particular on fluorescence (as instantaneous light emission, in particular in the case of short-wave illumination) or phosphorescence (as time-delayed fluorescence)
  • a phosphor may in particular be an inorganic, crystalline substance, which by technical introduction of impurities into its crystal lattice a technical
  • the phosphor may in particular be based on sulfides (zinc sulfide, zinc-cadmium sulfide, zinc sulfide-selenide), silicates (zinc silicate, such as, for example).
  • ZnS Mn (orange red), ZnS: Ag (blue), ZnS: Cu (green), or ZnS: rare earths (red to blue-green) can be used.
  • Gadolinium e.g. in the form of
  • At least one phosphor layer is present on the side of the carrier opposite the at least one LED chip.
  • the phosphor layer may be present in addition to or as an alternative to the phosphor layer between the phosphor layer and the carrier. With an additional presence like so, if these two phosphor layers one
  • Adhesive in particular adhesive layer.
  • the light exit surface rests on the carrier via an adhesive layer.
  • Light exit surface can be achieved with the carrier in a compact manner.
  • the adhesive layer is preferably in
  • the adhesive need not be translucent as a bulk material, if it is sufficiently thin is present.
  • a thickness of the adhesive layer is preferably less than 100 micrometers, in particular less than 50 micrometers, in particular less than 25 micrometers. It is still an embodiment that the light exit surface rests directly on the support. The LED chip can then be connected, for example via a potting with the carrier. This embodiment has the advantage that
  • a space is filled laterally next to the at least one LED chip with a filling material. This allows a high stability of the LED lighting device. In the case of several LED chips, this space is in particular a space laterally between the LED chips.
  • the filling material is in particular up to the height of the at least one LED chip, i. flush with it, filled up, which allows easy further processing.
  • Filler material may be in particular a potting material, but also a template, etc.
  • the filling material is designed to be reflective, that is to say that a space is filled laterally next to the at least one LED chip with a reflective filling material.
  • a luminous efficiency of the LED lighting device can be improved, because (for example, due to a wavelength conversion or an interfacial reflection) light not passing through the carrier is at least partially retrievable by the carrier again.
  • the reflective filling material may, for example, be coated with reflective particles or the like. filled base material or e.g. a reflective thin film (e.g., foil) covered by or covering a non-reflective filler material.
  • Material is filled and above or below the transparent material is a reflective layer is present, for example in the form of a thin film.
  • the filling material filling the space laterally next to the at least one LED chip may, for example, be made of resin
  • silicone in particular epoxy resin
  • glass or ceramic as base material.
  • a rear side (a side facing away from the light exit surface) of the at least one LED chip has at least one chip contact. This facilitates electrical contacting of the LED chip.
  • a rear side (a side facing away from the light exit surface) of the LED lighting device is covered with a cover layer, which has a respective recess above the at least one chip contact.
  • the recess allows a simple electrical contacting of the at least one LED chip.
  • the cover layer can be designed to be reflective and thus the function of the above the transparent material
  • the cover layer may for example consist of a reflective material or a reflective
  • Underside or topside e.g. formed with a reflective foil.
  • the at least one recess is filled with an electrically conductive material. This makes it easier to contact the respective LED chip easily. It is a further development that the recess has a larger area than that of it electrical connected chip contact.
  • a free surface of the electrically conductive material may in particular as a solder joint, weld, splice or as a
  • Bondpad for contacting by means of a bonding wire
  • the free surface may provide both electrical and thermal connection to at least one external component (e.g., electrical connections).
  • the electrically conductive material may also extend beyond the recess and then
  • cover layer extend laterally over the cover layer to provide a particularly large and easy to handle or electrically contactable surface.
  • the recess is at least partially filled with a metal or metal-containing material (e.g., silver paste), e.g. in form of a metal or metal-containing material (e.g., silver paste), e.g. in form of a metal or metal-containing material (e.g., silver paste), e.g. in form of a metal or metal-containing material (e.g., silver paste), e.g. in form of a
  • the metal or metal-containing material may be obtained, for example, by a galvanic process,
  • Producing an LED lighting device comprising at least the following steps: (a) providing a light-transmitting, in particular transparent,
  • At least one LED chip faces the carrier; and further optionally: (c) introducing filler material at least adjacent to the at least one LED chip; (d) applying a cover layer; (E) exposing chip contacts of the at least one LED chip by creating recesses in the
  • the method gives the same advantages as the described LED lighting device and can also be configured analog. It is for example an embodiment that the method further comprises the step (g): applying one of the at least one light exit surface optically downstream
  • This step (g) may
  • step (a) for example between step (a) and step (b)
  • step (g) may be carried out after step (f), in particular in order to position the phosphor layer on that side of the carrier which faces away from or faces the light exit surface.
  • step (b) comprises: applying at least one LED chip by means of a
  • the adhesive layer is preferably substantially translucent in order to obtain a high luminous efficacy.
  • the adhesive need not be translucent as a bulk material.
  • Step (b) may therefore be e.g. the sub-step: applying an adhesive layer on the
  • Phosphor layer in particular at least on a surface to be contacted with a light exit surface having.
  • step (b) can also be the step:
  • Step (c) may be performed by, for example, laying, casting, laminating, molding, and so on.
  • Step (e) may in particular comprise only partial exposure of chip contacts. The exposure may be performed, for example, by chemical etching, mechanical material removal, laser ablation, plasma etching, etc.
  • Step (f) can be achieved for example by selective embossing, by a planar metallization, for example by sputtering, in particular with a subsequent structuring or by a structured coating with a subsequent metallization.
  • Fig.l shows a sectional view in side view a
  • Fig.l shows a sectional side view of an LED lighting device 10 according to a first embodiment.
  • the lighting device 10 has a carrier 11
  • a phosphor layer 13 of a defined thickness is applied over a large area, which has a blue light in yellow light wavelength converting or converting phosphor.
  • a phosphor layer 13 is a thin
  • Adhesive layer 14 or adhesive layer of transparent adhesive applied to an LED chip 15 thereto Adhesive layer 14 or adhesive layer of transparent adhesive applied to an LED chip 15 thereto
  • the LED chip 15 contacts with its light exit surface 16, the adhesive layer 14, so that the light exit surface 16 faces the carrier 11.
  • the space laterally next to the LED chip 15 is with a
  • transparent filling material 17 e.g. potted with resin or silicone.
  • further LED chips may be present on the carrier 11, in which case the space is filled laterally between the LED chip 15 with the transparent filling material 17.
  • Filling material 17 is filled up to an upper edge of the LED chip 15 and thus flush with its upper side.
  • Filling material 17 is a reflective
  • Cover layer 18 which have a recess 20 above chip contacts 19 of the LED chip 15.
  • the cover layer 18 may be, for example, resin or silicone equipped with a reflective film or reflective particles.
  • the recess 20 is filled with a metallic conductive material 21 which extends upwards over the
  • the LED chip 15 is connected via the electrical connections 23 and further via the metallic conductive material 21 and the chip contacts 19 electrically powered and so activated for light emission.
  • the light emerges as here blue primary light from the
  • Adhesive layer 14 In the phosphor layer 13, part of the blue primary light becomes yellow light
  • Fluorescent layer 13 passing, primary light and the wavelength-converted yellow light generated white
  • reflected light at least partially passes through the transparent filling material 17 and is reflected by the support 11 on the reflective covering layer 18
  • FIG. 2 shows a sectional side view of an LED lighting device 24 according to a second embodiment.
  • the LED lighting device 24 is similar to
  • Lighting device 10 constructed, with the
  • phosphor layer 13 is now below the support 11, that is, on the side facing away from the LED chip 15 side of the carrier. As a result, attachment of the LED chip 15 to the carrier 11 is made possible only via the adhesive layer 14.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un dispositif d'éclairage à DEL (10) qui présente un support (11) sur lequel est implantée au moins une puce DEL (15), une surface de sortie de lumière (16) de ladite au moins une puce DEL (15) faisant face audit support (11) et ledit support (11) étant translucide au moins dans une zone de la au moins une puce DEL (15). Ledit procédé sert à produire un dispositif d'éclairage à DEL (10) et comporte les étapes suivantes: disposer d'un support (11) translucide, en particulier transparent et monter au moins une puce DEL (15) sur ledit support (11) de sorte qu'une surface de sortie de lumière (16) associée de la au moins une puce DEL (15) soit tournée vers le support (11).
PCT/EP2012/061197 2011-06-21 2012-06-13 Dispositif d'éclairage à del et procédé de production d'un dispositif d'éclairage à del WO2012175385A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102011077898.5 2011-06-21
DE102011077898A DE102011077898A1 (de) 2011-06-21 2011-06-21 LED-Leuchtvorrichtung und Verfahren zum Herstellen einer LED-Leuchtvorrichtung

Publications (1)

Publication Number Publication Date
WO2012175385A1 true WO2012175385A1 (fr) 2012-12-27

Family

ID=46317384

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2012/061197 WO2012175385A1 (fr) 2011-06-21 2012-06-13 Dispositif d'éclairage à del et procédé de production d'un dispositif d'éclairage à del

Country Status (2)

Country Link
DE (1) DE102011077898A1 (fr)
WO (1) WO2012175385A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102012213343B4 (de) 2012-07-30 2023-08-03 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung VERFAHREN ZUM HERSTELLEN EINES OPTOELEKTRONISCHES HALBLEITERBAUTEILs MIT SAPHIR-FLIP-CHIP
DE102013110733A1 (de) 2013-09-27 2015-04-02 Osram Opto Semiconductors Gmbh Optoelektronisches Halbleiterbauelement und Verfahren zur Herstellung eines optoelektronischen Halbleiterbauelements

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008066691A (ja) * 2006-03-10 2008-03-21 Toshiba Lighting & Technology Corp 照明装置
DE102008005345A1 (de) * 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Halbleiterbasiertes Bauelement, Aufnahme für ein halbleiterbasiertes Bauelement und Verfahren zur Herstellung eines halbleiterbasierten Bauelements
US20090160043A1 (en) * 2007-12-20 2009-06-25 Geng-Shin Shen Dice Rearrangement Package Structure Using Layout Process to Form a Compliant Configuration
US20100140655A1 (en) * 2009-02-26 2010-06-10 Wei Shi Transparent heat spreader for leds

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1119058A4 (fr) * 1999-07-29 2006-08-23 Citizen Electronics Diode electroluminescente
DE102007032280A1 (de) * 2007-06-08 2008-12-11 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement
DE102009019161A1 (de) * 2009-04-28 2010-11-04 Osram Opto Semiconductors Gmbh Leuchtdiode und Verfahren zur Herstellung einer Leuchtdiode

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008066691A (ja) * 2006-03-10 2008-03-21 Toshiba Lighting & Technology Corp 照明装置
DE102008005345A1 (de) * 2007-09-28 2009-04-02 Osram Opto Semiconductors Gmbh Halbleiterbasiertes Bauelement, Aufnahme für ein halbleiterbasiertes Bauelement und Verfahren zur Herstellung eines halbleiterbasierten Bauelements
US20090160043A1 (en) * 2007-12-20 2009-06-25 Geng-Shin Shen Dice Rearrangement Package Structure Using Layout Process to Form a Compliant Configuration
US20100140655A1 (en) * 2009-02-26 2010-06-10 Wei Shi Transparent heat spreader for leds

Also Published As

Publication number Publication date
DE102011077898A1 (de) 2012-12-27

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