TW201013980A - Light-emitting chip and light-emitting apparatus having such a light-emitting chip - Google Patents

Abstract

A light-emitting chip comprises at least one semiconductor structure (12) which emits light when a voltage is applied and which comprises at least one bond area (28, 24c), and also a support substrate (32) which carries the semiconductor structure (12). On at least one face area (34, 36) projecting over the semiconductor structure (12), the support substrate (32) carries a contact layer (38, 40) which is electrically conductively connected to the bond area (28, 24c) of the semiconductor structure (12). In addition, a light-emitting apparatus (56; 62; 64; 72; 86; 90; 92; 132) is specified with at least one semiconductor structure (12) which emits light when a voltage is applied and which comprises at least one bond area (28, 24c), and with at least one connection device (58, 60; 68, 70; 82) which can be connected to a voltage source and which is electrically conductively connected to the bond area (28, 24c) of the semiconductor structure (12). At least one light-emitting chip (10, 10') according to one of claims 1 to 10 is provided, wherein the connection device (58, 60; 68, 70; 82) is electrically conductively connected to the contact layer (38, 40) of the light-emitting chip (10, 10').

Description

201013980 6. Technical Field of the Invention The present invention relates to an illuminating wafer having a) to V | 胄 structure, which emits light when applied with a voltage and includes at least one lands; b) a carrier substrate for carrying the semiconductor structure. The invention further relates to a light-emitting device having a ❹ a) to y semiconductor structure 'the semiconductor structure emits light upon application of electricity' and includes at least one junction region, ·) to >, which can be connected to a voltage source And a connection device electrically connected to the junction region of the semiconductor structure. [Prior Art] A semiconductor structure composed of a wafer material used in such a light-emitting ruthenium is usually mounted on a carrier substrate (e.g., a sapphire glass layer) by a conventional photolithography method and/or a dry method. The pure wafer material is extremely fragile, so the illuminating crystal film is permeable through the (four) base (four). Application to an energy-conducting conductor structure in a light-emitting element 'single or multiple semiconductor structures of the above structure must be cut together with a corresponding number of carrier substrates into a single light-emitting wafer ^=LED wafers', whereby it can be illuminated individually The wafer is shaped within the illumination device. A single semiconductor structure or a single illuminating wafer must be wired in a conventional manner by means of bonding means in a dedicated manner, the wires connecting the voltaic voltage source directly connected to the splicing region of the semiconductor structure. The wiring used in 201013980 is extremely thin and extremely brittle, so the LED chip must be sealed immediately after the bonding process to protect the wire bond. If a plurality of individual semiconductor structures or illuminating wafers in a certain arrangement are to be connected to each other (for example, in series or in parallel), the situation will be more complicated, for which one of the first semiconductor structures and the second semiconductor structure must be Among the semiconductors, the junction area is connected. In this case, it is made by extremely fine wiring. The established splicing will reach its limit. SUMMARY OF THE INVENTION It is an object of the present invention to provide an illuminating wafer of the type described in the opening paragraph which is easier to handle and easier to install after manufacture. The next day, in the case of a light-emitting chip of the type mentioned in the opening paragraph, the goal is achieved: The following is the case: a. The opaque carrier substrate has a contact layer on at least a planar region that protrudes beyond the semiconductor structure, the contact layer being electrically connected to the junction region of the semiconductor structure. Therefore, the effective surface of the carrier substrate is used not only for accommodating the semiconductor structure but also as a substrate for the contact layer. By means of the contact layer, the illuminating wafer can be electrically operated: if the contact layer is sufficiently large, the wiring can be made by a finer and more stable electrical connection. Further, the contact layer is arranged such that the contact layer is disposed on the carrier substrate to protrude on the semiconductor junction: planar region. Thereby the contact layer can have the same spatial orientation as the junction area of the semiconductor structure. Advantageous developments of the invention are given by the respective sub-items. According to an advantageous embodiment, the contact layer extends substantially parallel to the junction of the semiconductor structure and the contact layer. In the case of the manufacture of the luminescent wafer, it is advantageous to obtain the contact layer by vacuum deposition of a metal or a metal alloy (specifically, a copper alloy, a gold alloy, a silver alloy or an aluminum alloy). In this case, conventional techniques can be employed. It is advantageous for the subsequent mounting of the luminescent wafer in the illuminating element to provide the contact layer with a contact surface having an area of from about 2% to about 8% of the area of the largest effective interface of the semiconductor structure. , preferably about 鸠 to: catch 'more (four) 4G% to about sail, especially about 5Q%. Thereby, the contact surface which is easy to contact with respect to the size of the semiconductor structure can be mentioned. The electrical connection of the good region 2 can be established between the contact layer and a bonding region by the following means: the contact layer is bonded to the contact layer by a conductive material if the material sheet contains metal particles or silver particles or It's mixed... (four). . It is better to use copper particles. The gold is uniformly distributed on a substrate. (Specific: - Component material is preferably a two-component tablet. It can be embossed in a conventional manner. On the wafer, as an alternative, the alloy (specifically, the copper sheet can be advantageously obtained by vacuum deposition of metal or metal. I alloy, silver alloy or aluminum alloy) enters the luminescent wafer. The thickness of the mechanical field substrate is such that the semi-guided valley 1 is advantageously such that the loading ratio is preferably from about 10 times to about 60 s of the height of 20 times to about 3 。. Breaking the sapphire In the case where the glass is used as a carrier base 201013980, the specific requirement of the illuminating wafer to satisfy the mechanical stability is further specified. Another object of the present invention is to provide an illuminating wave of the type described in the opening paragraph. The illuminating device is not susceptible to damage in the case of a luminescent wafer mounted therein. For a illuminating device of the type mentioned in the opening paragraph, the solution to this object is as follows: c) at least one of the requirements 1 to 10 is provided Illuminated wafer; d The connecting device is electrically connected to the contact layer of the luminescent wafer. In this case, the light-emitting wafer can be electrically wired by the connection device and the contact layer through a stable and permanent connection, without the need to directly pass through the junction of the semiconductor structure by the thin wires. According to an advantageous embodiment, the illuminating wafer is carried by a printed circuit board, wherein the connecting device is designed as a connecting piece on the printed circuit board. Separately, a plurality of illuminating wafers can be arranged on a P-brush board, thereby realizing a high-brightness module. If a light guiding member is provided and the light emitting wafer is arranged in such a manner that light emitted therefrom is introduced into the light guiding member, a good large-area lighting effect can be obtained. If it is necessary to planarly illuminate an object, it is advantageous to design the light guiding element into a plate shape. In this case, the light-emitting wafer can be disposed beside the narrow side of the light guiding member, whereby the entire main surface of the light guiding plate can be used as a light source. _ 201013980 As an alternative, it is also possible according to an advantageous embodiment of the arrangement of the illuminating wafer on the main surface of the light guide, at least one side of the illuminating wafer, to the <, a locally distributed reflective layer, the reflective layer Towards the light guide = the direction of the ice leaf σ 发 emitted by the reflective illuminating wafer, whereby the light emitted by the illuminating wafer can be effectively utilized. j. In this case, it is also advantageous to couple the luminescent wafer with a small portion by means of a photoconductive material. The guiding material to the right of the light guiding material is; g 材 material thick, surname a material 枓 special 疋 S is oyster sauce, at the same time can also heat the luminescent wafer. Right "The first wafer is 癖^ aU AA 'ri> Ε μ — The wavelength of the light of I does not match the expected wavelength, then: • The following three modes are adjusted, that is, the illuminating device includes a illuminating The material layer 'the luminescent material layer is preferably distributed with phosphorescent particles, and the three squamous light particles absorb the light emitted by the scorpion scorpion, and the other emits light of other wavelengths. "The disc light particles contain phosphorus, which absorbs the radiation falling on it and emits radiation at other (longer) wavelengths. Therefore, the light-emitting wafer can be selected by appropriately selecting the phosphorescent particles or the phosphorescent particle mixture. The radiation emitted is converted into radiation having other spectra. According to an advantageous solution, if the light-emitting chip is thermally connected to the heat-dissipating element, heat dissipation of the light-emitting chip can be promoted. The semiconductor structure emits light of a first color, at least one semiconductor. The structure emits a second color of light 'at least—the semiconductor structure emits a third color of light, and the light emitting device can generate a plurality of mixed colors of light. 9 201013980 wherein, if the first color is green, the In this way, the color can be substantially red, and the third color is blue, which is particularly advantageous. The light of all colors of the visible spectrum is generated. [Embodiment] FIG. 1 and FIG. 2 show the ray of the whole _ a wafer, the illuminating wafer comprising a semiconductor level m, a 构~ structure 12. The semiconductor structure 12 is composed of three layers. The 斤', & Η layer is an n-type layer, consisting of n-GaN or nI nGaN 16 MQW^oMQW#, the abbreviation of Multiple Quantum WeU. The MQW material constitutes a superlattice having an electronic band structure that changes with the superlattice structure and corresponding to other wavelengths. Luminescence. By selecting the MQW layer, the spectrum of the radiation emitted by the p_n half V body 12 can be influenced. The top layer 18 is made of a p-type III_V semiconductor material (e.g., p-GaN). 12 has a ring-shaped step 20' which is dome-shaped from a plan view, and its step surface 22 is spaced apart from the MQW layer 16. In this case, the n-type layer 14 protrudes inwardly on the MqW layer inside the step surface 22 region. 6 and the p-type layer 18. The step surface 22 is covered by a corresponding u-shaped vacuum-deposited printed conductor 24. The printed conductor 24 has two parallel-extending parallel printed conductors 24a, 24b and one perpendicular thereto. A printed wire 24c (see Fig. 2) is formed by the printed wire. The printed wire 24c constitutes an n-type land for bonding the layer 14. In order to be able to bond the p-type layer 18 to the area 26 surrounded by the meander-shaped printed conductor 24, a vacuum deposition printing 201013980 wire 28 is also provided on the top surface of the p-type layer, the printed wire forming a joint for bonding The p-type junction region of the p-type layer 丨8. On the surface of the p-type layer 18 there are three printed conductors 3A, 3B, extending from the conductive surface 28 sideways into the region 26 of the p-type layer 18. As shown in Fig. 2, the free ends of the two outer printed wires 3a and 30c are bent by 90° toward the intermediate printed wire 30b, respectively.

The layout of the printed conductors for contacting the semiconductor structure 12 can vary depending on the particular application area and the power of the semiconductor structure and can be matched to the relevant requirements in a conventional manner. In principle, any semiconductor structure that emits light when a voltage is applied can be mounted in the light-emitting wafer 1A. The area of the region 26 of the semiconductor structure is 28"mx28"_to_deleted_. The height of the semiconductor structure 12 is about 5_1 to 1〇μηι. 'Fried two gold alloys are obtained by direct deposition. As an alternative, The superposition scheme may also use a silver alloy or an aluminum alloy α to be doped with φ and gold in the region of the n-type junction region 24c and the p-type junction region 9^£28 to connect the p-type layer or the n-type layer. The carrier substrate 32 is also supported by a carrier substrate 32. The carrier substrate 32 is also known as corundum glass (Al2〇3 glass)"^blue enamel; culvert sapphire glass. If the gemstone glass is used, the carrier substrate 32 may be of other thickness, for example, a thickness of 介°0 to 1. The height of the semiconductor structure 12 is Yan (4) and 600 is thicker, then the η Λ, Λ A and Feng reference, the carrier substrate 32 is the first sturdy 10, the subsequent unit is 明 彳t & % $ in particular, the semiconductor structure between the height of j and the thickness of the carrier substrate 32]

The publication rate is about 1:1 0. J 201013980 1 : 6 0 or so It is preferably about 1:20 to 1:3〇. Alternatively, the carrier substrate 32 may also be constructed of an undoped wafer material on which the semiconductor structure 12 is mounted by conventional techniques. In this case, the semiconductor structure ί2 is connected to the carrier substrate 32 as a whole. The carrier substrate 32 is flush with the semiconductor structure 12 on the printed conductor 24a side and the printed conductor 24b side. The carrier substrate 32 protrudes from the first planar region 34 and the second planar region 36 on the side of the p-type bonding region 28 of the p-type layer 18 and the n-type bonding region 24C of the n-type layer 14 respectively. Beyond Μ. ❹ The carrier substrate has a first contact layer 38 and a second contact layer formed by vacuum deposition of a copper-gold alloy on the material plane regions 34 and 36, respectively. As an alternative, the contact layers 38 and 40 may also be made of silver alloy or aluminum. Alloy or gold, or as appropriate, doped gold. The first contact layer 38 II is composed of a first material core composed of a conductive material: a semiconductor structure 12? The junction regions 28 are electrically connected. Correspondingly, the contact layer 4 is electrically conductively connected to the n-type junction region of the semiconductor structure 12 by a second material sheet 44 composed of a conductive material. The first and second materials 2 44 can be obtained by hardening the viscous conductive material. The material sheets 42 and 44 may be uniformly distributed with copper particles or silver particles and a mixture. A two-component material (such as a two-component adhesive) can be used as the substrate for the material month 42 '44.乍 is an alternative, and the material sheets 42 and 44 can also be obtained by vacuum deposition of a copper-gold alloy, a silver alloy or a seal. 44' or, as the case may be, the area covered by the first and second material sheets 42'44 is not counted, and the 12th 201013980 and the first contact layers 38 and 40 still have a larger first contact surface 46 and Contact surface 48. The practical results show that if the area of the two contact faces accounts for about 20% to about 80% of the area of the largest effective interface of the semiconductor, the structure 12, 30/ of the 1 'spoon. It is particularly advantageous to about 7 % by weight 'better about to about 'more preferably %'. In this embodiment, the maximum effective interface is from the n-type layer 14 toward the outer surface 5 of the carrier substrate 32 (see Figure regulations. First and

The second contact faces 46, 48 are different in size in the embodiment shown here, but can be equally large. A dielectric 52 is disposed between the first contact layer 38 and the first material layer 42 and the semiconductor structure η leading to the 接合-type junction region 28 of the semiconductor structure 12, the dielectric preventing the layers 14 of the semiconductor structure 12, An electrically conductive connection is made between 16 and 18. By the above measures, the illuminating wafer 1 can be constructed as a relatively strong structural unit as a whole, which can be connected to a voltage source by its ρ and second contact faces 46 and 48. Figs. 3 and 4 show a modified light-emitting wafer 1A, wherein the same elements of the improved light-emitting chip and the light-emitting chip 1G are denoted by the same (four) symbol. The illuminating wafer 10 has two semiconductor structures connected in series with each other... and 12b' is required to electrically conduct the printed wiring 24c and the second semiconductor structure (3) of the left semiconductor structure (10) shown in FIGS. 3 and 4 by the third material sheet 54. The faces 28 are connected and the third piece of material spans the distance between the two semiconductor structures 12a. The distance is of the order of (10) the third piece of material consisting of one of the materials described above for the first and second sheets 42 and 44. 13 201013980 According to this, in the light-emitting wafer ίο, the first contact layer 38 with the first contact surface 46 is arranged beside the side of the (four) junction region 28 of the semiconductor structure (2), the second contact with the second contact surface 48 The layer 4 is disposed beside the side of the n-type land 24c of the half structure 12b. FIG. 5 shows a first lighting unit 56. The illuminating unit "has three parallel illuminating wafers 10a, 1〇b and 1〇c. For this purpose, the three illuminating wafers 10a, 1〇b, 1〇c have to be made by a rigid or flexible first connecting piece 58. The first contact layer 38 is electrically connected to each other. For this purpose, the first connecting piece 58 must be soldered to the first contact surface 46 of the three light-emitting wafers 10a, 10b, 1〇c or by a conventional adhesive conductive paste. Correspondingly, the second contact layers 4 of the three light-emitting wafers 10a, 10b, 10c are also electrically connected to each other by a second connecting piece 6 which is also rigid or flexible. The second connecting piece 60 must be welded to the second contact surface of the two light-emitting wafers 1A, 1B, 1〇c or a conductive bonding connection therebetween. Figure 6 shows an improved a second light emitting unit 62 in which four light emitting wafers 10a, 10b, 10c, and 10d are connected in parallel with each other in the above-described manner. The difference from the first light emitting unit 56 shown in FIG. 5 is that In the second light-emitting unit 60, every other light-emitting chip has a light-emitting chip as the first light-emitting wafer 10a and 10c or 1 B and l〇d are connected to the connecting sheets on the other side of the connecting sheets 58 and 6. In this way, the luminous efficiency of the light-emitting element 62 in the space can be improved with respect to the first light-emitting unit 56. The arrangement of 10a and 10c is such that the contact faces 46 and 48 point in the same direction as the active faces 50 of the luminescent wafers 1 Ob and 10d. Figure 7 shows a third illuminating unit 64. In the illuminating unit, = 14 201013980 illuminates The wafers H)a, H)b and !0c are connected in series with each other by two printed wires (6), (10). The first contact layer 38 of the light-emitting "H)a is "connected" to the first connecting piece and the second of the third light-emitting chip 10c. The contact layer 4〇 is connected to the second connecting piece. The connecting pieces 68 and 70 can then be connected to the terminal clip of the 厌 厌 思 1 无 无 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 a four-light-emitting unit 72 having a narrow-length rigid printed circuit board 74 composed of a plastic e , and equipped with a plurality of light-emitting wafers 1 〇 for three of the light-emitting wafers 10a, 10b And l〇c are illustrated. The printed circuit board 74 has a plurality of equidistantly distributed perforations%, The size of the perforation is sufficient to place a semiconductor structure 其 in each of the interiors. On the contact surface 78 of the printed circuit board 74, the U-shaped printed wire 80 is placed between the z-shaped teeth and the U-shaped printed wire 80.丄Equipped with ~printed wire can be obtained by vacuum deposition of copper-gold alloy and silver-filled. In the end region of printed circuit board 74, there is a narrow connecting piece 82, Fig. 8 to Fig.: The tabs are illustrated. The arrangement of the illuminating wafers 10 on the printed circuit board 74, such as the semiconductor structure 12, extends through the perforations 76 (see Fig. 8), and the printed conductors 80 and tabs 82 are connected in series with one another. If the printing is wrong and the corresponding extension method is used, the corresponding light-emitting wafers can also be connected in parallel. The weight of the printed circuit board 74 is the same as that of the surface of the connecting surface 7 of the connecting surface 7. In the case where the perforations are present on the brush circuit board 74, the fourth road singularity TL 72 can also illuminate through the surface. FIG. 11 shows a fifth light-emitting unit 86 in which the same elements as the first and second elements of the first and second light-emitting units are used in the fifth light-emitting unit 86. (10) Borrowing -

The U-shaped printed wires 8G and the connecting pieces 82 are connected in series to each other. The length of the base 80a of the u-shaped print 80 is greater than the printed conductor (10) of the fourth illumination unit, so that the distance between the sides 80b and 80c is also greater than that of the fourth illumination unit μ. The printed circuit board 74 is Between the sides 8〇b and 8〇c, there are -17 holes 88', thereby achieving material saving during the manufacture of the printed circuit board 74. FIG. 12 shows a sixth lighting unit 9〇, the lighting unit and the fifth The light-emitting unit 86 is substantially identical, but has three light-emitting chips 1a, 1A, and 1〇c connected in series with each other by a printed wire 8 and a connecting piece 82. Figures 13 and 14 show a light-emitting structure 94. a lighting unit 92, the light emitting structure comprising a fastener % for carrying the light-emitting unit %, the light-emitting unit being composed of any one of the first to sixth light-emitting units 56, 62, 64, 72, 86 or 90 The light-emitting structure 94 is connected to the voltage source in a conventional manner and will not be described again here.

Lighting unit 92 includes a flat light guide plate 98 constructed of clear acrylic glass. The light guide plate 98 can also be made of other uniform light transmissive materials such as glass or epoxy. The light guide plate 98 is preferably clear and transparent. The light guide plate 98 has a casing 1 〇 2 on its narrow surface 1 ,, the casing has a parabolically curved casing wall 4 and a plurality of end walls not specifically indicated by the components herein. The housing wall and the end walls define an internal cavity 1〇6. A light emitting structure 94 is disposed in the inner cavity. The inner cavity 106 of the housing 102 is filled with a light-conducting liquid in the form of a liquid sputum oil 1 〇 8 as shown in Fig. 14 which is used to illuminate the narrow face 100 of the light guide plate 98 emitted by the light-emitting structure 94. The sputum oil 〇8 also dissipates the heat generated by the illuminating structure 94 to the housing wall of the casing 1〇2. The fastener 96 of the light-emitting structure 94 is made of a material having good thermal conductivity and is thermally coupled to the housing wall 104, which itself is also made of a material having good thermal conductivity. The housing wall 1〇4 has a heat dissipating member 112 on its outer surface 11〇, which absorbs heat and discharges it outward into the surrounding environment. The inner surface 114 of the housing 22 is provided with a reflective layer 116 by which light from the opposite side of the light guiding structure 98 can also be reflected onto the light guiding plate or its narrow face 100. Figure 14 illustrates this with arrow 118. A coupling device 12'' is disposed on the narrow face 100 of the light guide plate 98, the outer side of which is defined by the housing 102. The coupling means includes a lens plate 122 directly adjacent to the narrow face 100 of the light guide plate. The lens plate is made of acrylic glass and includes a plurality of plano-convex concentrating lenses 124. The concentrating lenses 124 align the light emitted by the illuminating structure 94 with the light guide plate 98. The coupling device 120 further includes a layer of luminescent material 126 which is disposed on the lens plate 122 if viewed in the direction of the narrow face 100 of the light guide plate 98. The luminescent material layer comprises fine phosphorescent particles 1 28 which are evenly distributed within an eucalyptus oil not specifically designated by the symbol of the element. The phosphorescent particles 128 are made of a transparent solid material having a color center. Disc light particles 128 can also be a mixture of a plurality of different types of phosphorescent particles. The semiconductor structure 12 made of p-GaN/n_InGa_ of the luminescent crystal 10 emits ultraviolet light and a wavelength of 42 〇 11111 to 48 〇 nm when applied with a voltage. By suitably selecting the phosphorescent particles or the mixture of filled particles, the radiance emitted by the luminescent structure 94 can be converted to radiation having a spectrum that matches the expected spectrum; for example, white light can be produced. If the luminescent material layer 126 is not employed, the illumination unit 92 emits blue light. The coupling device 120 further includes a thin acrylic plate 13 〇, by which the enamel oil of the luminescent material 126 and the enamel oil in the cavity 丨〇6 of the housing 102 can be avoided. Mixing occurs. In a modification of the first illumination unit 92 not specifically illustrated herein, the other narrow faces of the light guide plate 98 are also arranged in the same manner with the illumination structure ❹ 94 ° of the housing 102 as shown in FIG. The actual width may be between a few mm and a cm, whereby the housing can cooperate with the light guide plate 98 of corresponding thickness. The thickness can also be up to 3 coffee, but it can also be used in thicknesses of more than 3 cm depending on the intended application. Fig. 15 shows a second illumination unit i32, the same elements of which are identical to those of the first illumination, which are denoted by the same reference numerals. As shown in Fig. 15, the light emitting structure 94 is disposed in a groove 134 which is disposed on the main surface 136 of the light guide plate 98. Each of the groove walls 138, 14 is provided with a consuming 12 〇. A reflective film 144 is mounted on the groove bottom 142 in the light guide plate 98. The apex that falls on the reflective film 114 is reflected back into the light guide plate 9 by the reflective film. The bottom 142 of the groove is not provided with two reflecting surfaces 46 and 148' which extend obliquely toward the bottom of the groove. The reflecting surfaces intersect at the center of the groove 134 and extend therefrom toward the reflecting film 144. 18 201013980 Slot 134 is a shy 〗 〖4 盍 150 closed, % of the structure of the fasteners through the cover and ampoules in the 〇. The heat sink 152 outside the lead plate 98 is thermally conductively connected. The tank 134 is filled with oil, and the heat generated by the light-emitting structure 94 is dissipated toward the cover 150. The slit 150 has a reflective layer 154 on the side of the groove m2. The rainbow second hunting surface 146, 148 and the reflective layer 154 can cause the light-emitting structure 94 to turn toward the basin, and the radiation emitted from the direction of the light-emitting structure 94 is turned to the coupling device 120 or the groove walls 138, 140. Friend

_ This is illustrated by the arrow 丨丨8 that does not radiate. The light-emitting wafer H) can be electrically wired by the contact layers 38 and 40 and the contact surfaces 46 and 48 provided thereby without the need for (iv) fragile wire bonding. The connection to the electrical system can be achieved by a safer method and a more reliable electrical connection such as soldering and soldering. The robustness of the light-emitting wafers 1 and 10 makes them comparable in operability to conventional SMD devices (e.g., resistors or capacitors) in the electronic field. Excellent heat dissipation can be achieved by the contact layers 38 and 40 combined with the material sheets 42 and 44. Therefore, it is also possible to use the illuminating wafer ι〇, 1 〇, if not used: as the lighting single it 9...32 Thermal fluid cooling measures. According to a further development, the contact layers 38 and 40 can be thermally connected to a heat dissipating component for this purpose. With respect to the radiating surface of the semiconductor structure 12, the radiating surface of the light-emitting wafer 1 is increased by the presence of the carrier substrate 32. The carrier substrate emits light through its entire outer surface away from the semiconductor structure 丨2. This surface may be roughened as appropriate to further exploit the scattering effect. 19 201013980 With traditional LEDs, each lighting unit 56, conclusion. Different 'light-emitting wafers 10, 10 are devices in the illustration of independent 62, 64, 72' 86 or 90. It can be concluded that a plurality of light-emitting wafers 1 〇, 1 〇 are obtained in any way. Actual response capacity. In view of the actual application of the daily tempo, the day of use can also be made without the light guide plate 98 being provided, and the r-to-figure of the figure 13 and the light-emitting unit 132 of FIG. 15 can be made.

In the case of It, the heat dissipating elements 112 or 152 and associated housings can be matched to the % % % < A plurality of light-emitting wafers 1 are present in the light-emitting units 56, 62, 64, 72, 86, and 90. The illuminating wafers may have different semiconductor structures 12' that emit red, green and blue light. In this case, the illuminating units 56, 62, 64' 72' 86 = constitute an RGB illuminating unit. If the illumination unit 92 of the illumination unit 92 or 132 is composed of such RGB illumination units 56, 62, 64, 72, % or ❹ 90, the luminescent material with phosphor particles 128 can be discarded in the illumination unit 92 or 丨32. Layer 126' is replaced by diffusion layer 156, which appears in the form of a ruthenium film. Figures 14 and 15 illustrate this with parenthesized component symbols 156. In this case, white light can be generated by mixing red, green, and blue light of the light-emitting wafer 10 that emits the corresponding light. According to another modification not specifically illustrated, the layer 126 is composed of crushed oil 'no phosphorescent particles 128'. Optionally, a diffusion layer 156 may be provided. By controlling the red light emitting chip 1 〇, the green light emitting chip or the blue light emitting chip 1 相应, substantially any color of light can be generated. According to an embodiment, in the case of the light-emitting unit 56, 62, 64, 72, 86 or 20 201013980, two adjacent light-emitting wafers are arranged at intervals of 3 mm to 7 mm from each other. Preferably, they are arranged at a distance of 5 sides from each other. The right monochromatic light-emitting chip 10 can only emit light in one direction, and the same can be alternately arranged on the opposite side of the carrier medium, so that the light-emitting unit 95 can emit light in all spatial directions. In the case where the illuminating devices 92 and 132 are constructed by the RGB lighting unit 95, a plurality of illuminating wafers each having a power of more than one watt can be used without any auxiliary measures to ensure the red, green and blue light. Mixing and efficient introduction of the mixed light in the light guide plate 98. When using a conventional high-efficiency diode, it is often necessary to mix light emitted from a single illuminating wafer with a complicated device to achieve uniform re-radiation. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a side view of a first embodiment of a light-emitting chip with a semiconductor structure; FIG. 2 is a plan view of the light-emitting chip of FIG. 1; FIG. 3 is a second embodiment of the light-emitting chip. FIG. 4 is a plan view of the illuminating wafer shown in FIG. 3; FIG. 5 is a top view of the first illuminating unit, and the illuminating unit includes three illuminating wafers as shown in FIG. The illuminating wafers are connected in parallel with each other by two connecting sheets; FIG. 6 is a plan view of the second illuminating unit, wherein four illuminating wafers are arranged alternately on opposite sides of the two connecting sheets; 21 201013980 FIG. 7 is a plan view of a third light emitting unit including three hairpins a μ »β 6 as shown in FIG. 1 , and r 9th day film 'Shai light emitting chips are connected in series with each other; The cross-sectional view of the unit taken along the cutting line of FIG. 9 and FIG. 10, the one side of the printed circuit board of the U/lighting early 7C is provided with a plurality of light-emitting wafers as shown in FIG. 1; FIG. 9 is as shown in FIG. 8 printed circuit board equipped A plan view of the wafer contacting surface of the light;

1 is a plan view of the printed circuit board shown in FIG. 8 opposite to the contact surface; FIG. 2 is a top view of the fifth light emitting unit as shown in FIG. 9; FIG. 12 is a sixth light emitting unit as shown in FIG. And a top view of the light-emitting element with a light guide plate. The light-emitting element is introduced into the edge of the light-guiding plate by the light-emitting unit. The light-emitting element shown in FIG. A cross-sectional view taken from line XIV-XIV; and Fig. 15 is a cross-sectional view of a modified light-emitting element with a light guide plate in which a light-emitting unit is disposed in a groove of a light guide plate. Φ [Main component symbol description] 1 〇: luminescent wafer 10': luminescent wafer 10a: luminescent wafer 10b: luminescent wafer 10c: luminescent wafer 22 201013980 l 〇d: luminescent wafer 1 2 : semiconductor structure 12a: semiconductor structure 12b: semiconductor structure 14: bottom layer / n type layer 16 : intermediate layer / MQW layer 1 8 : top layer / p type layer 20 : step step 22 : step surface 24 : printed wire 24a : printed wire 24b : printed wire 24c : printed wire / n type joint Zone 26: Zone 28: Printed Conductor/Conductive Surface/p-Type Bonding Zone 30 a. Printed Conductor mw 30b: Printed Conductor 3 0 c. Printed Conductor 32: Carrier Substrate 34: Planar Zone 36: Planar Zone 38: Contact Layer 40 : contact layer 42 : material sheet 23 201013980 44 · material sheet 46 : contact surface 48 : contact surface 50 : outer surface / effective surface 52 : dielectric 5 4 · material sheet 56 : light unit 58 : connecting sheet

60 : Connecting piece 62 : Light-emitting unit / light-emitting element 64 : Light-emitting unit 66a : Printed wire 66b : Printed wire 68 : Connecting piece 70 : Connecting piece 72 : Light-emitting unit

7 4 : Printed circuit board 76 : Perforation 7 8 : Contact surface / connection surface of printed circuit board 80 . Printed conductor 80a : Base side 80b : Side 80c : Side 82 : Connecting piece 24 201013980 84 : Printed circuit board Face 86: illumination unit 88: perforation 90: illumination unit 92: illumination unit / illumination unit / illumination device 94: illumination structure 95: illumination unit

96: Fastener 9 8 : Light guide plate 100 : Narrow face 102 : Housing 104 : Housing wall 106 : Inner cavity I 0 8 : Emu oil 110 : Outer surface II 2 : Heat dissipating element 114 : Inner surface 11 6 : Reflective layer 11 8 : arrow 120 : coupling device 122 : lens plate 124 : concentrating lens 126 : luminescent material layer 1 2 8 : luminescent particle 25 201013980 1 3 0 · Acrylic plate 132 : lighting unit / lighting unit / lighting device 134: Slot 136: main surface 1 3 8 : groove wall 140: groove wall 142: groove bottom 144: reflection film 1 4 6 : reflection surface 148 · · reflection surface 150: cover 152: heat dissipation plate / heat dissipation element 1 5 4 : reflection Layer 156: diffusion layer

26

Claims (1)

201013980 and 98.5.2α towel sent the original text (four) special and uniform. Seven, the scope of application patent: - 1. A light-emitting chip, which has a) at least - semiconductor structure (12), the semiconductor structure will be applied when voltage Luminating 'and including at least one bonding region (28, 24c); b) a carrier substrate (32) for carrying the semiconductor structure (12), characterized in that the carrier substrate (32) protrudes at least in the semiconductor The planar region (34, 36) outside the structure (12) has a contact layer (38, 4 〇), and the contact layer is electrically connected to the bonding region (28, 24c) of the semiconductor structure (12). 2. The luminescent wafer of claim 1 wherein the contact layer (38, 40) extends substantially parallel to the lands (28, 24c) of the semiconductor structure (12) associated with the contact layer. 3. The illuminating wafer of claim 1 or 2, wherein the contact layer (38, 40) is made of a metal or a metal alloy (specifically, a copper alloy, a silver alloy or a silver alloy) Alloy) was obtained by vacuum deposition. 4. The illuminating wafer of any one of clauses i to 3 of the patent claims, wherein the contact layer (38, 40) provides a contact surface (46, 48), the area of the contact surface occupies the semiconductor structure (12) The area of the largest effective interface (5 〇) is about 20% to about _' preferably about to about 鸠, more preferably about 4% to about 60%, especially about 5%. The illuminating wafer of any of items 1 to 4, in 27 201013980, the contact layer (38' 4 〇) is joined to the contact layer by a conductive material sheet (42, 44) (28, 24c) Connected. 6. The luminescent wafer of claim 5, wherein the bismuth material sheet (42' 44) comprises metal particles, specifically copper particles or silver particles or a mixture thereof. 7', as in the illuminating crystal # of claim 6, wherein one of the metal particles is uniformly distributed in the substrate, the substrate is specifically a two-component material, preferably a two-component adhesive. Agent.瘳8. The illuminating wafer of claim 5, wherein the material sheet (42, 44) is made of a metal or a metal alloy (specifically, a copper alloy, a gold alloy, a silver alloy or an aluminum alloy) Obtained by vacuum deposition. 9. The luminescent wafer of any one of clauses 1 to 8, wherein the thickness of the carrier substrate (32) is from about 10 times to about 60 times the height of the semiconductor structure (12). 2 times to about 30 times. ® 〇. A light-emitting device having a) at least one semiconductor structure (12) that emits light when applied with a voltage and includes at least one junction region (28, 24c); b) at least one voltage source Connected connecting means (58, 60; 68, 7?; 82) electrically connected to the junction area (28, 24c) of the semiconductor structure (12), characterized in that 28 201013980 c) is provided with at least one An illuminating wafer (10' 10') according to any one of claims 1 to 10; d) the connecting device (58'6〇; 68, 70; 82) and the luminescent wafer (10, HT) The contact layers (38, 40) are electrically connected. The illuminating device of claim 1, wherein the illuminating wafer (10, 10') is carried by a printed circuit board (74), wherein the connecting device (82) is designed as the printed circuit board ( ) The connecting piece (82). ❹ 12. The illuminating device of claim 1 or claim 1, wherein a light guiding element (98) is provided, the light emitting chip (1〇, 1〇) being used to introduce light emitted therefrom The arrangement of the light guiding elements (98). The light-emitting device of claim 12, wherein the light-guiding element (98) has a plate shape, and the light-emitting chip (1〇, 1〇) is disposed on a narrow side of the light guide element (12) (100) Sideways. 14. The illuminating device of claim 12 or 13, wherein the illuminating wafer (10, 10) is disposed in a groove (134) on a major surface (136) of the light guiding member (12). 15. The illuminating device according to any one of claims 12 to 14, wherein at least one side of at least one side of the δ illuminating wafer (10, 1 〇,) is provided with a reflective layer of at least a portion of the cloth (丨44, 146, 148), the reflective layer reflects the light emitting chip (1〇, 1〇') in the direction of the inside of the light guiding member (98). 16. The light emitting according to any one of claims 12 to 15 29 201013980, wherein the illuminating wafer (10 '10,) is at least partially coupled to the light guiding element (9 8 ) by a light guiding material (1 〇 8). 17. The illuminating device of claim 16, wherein the photoconductive material (108) is a bismuth material, specifically eucalyptus oil. 18. The illuminating device of any one of claims 12 to 17, wherein the illuminating device comprises a luminescent material layer (126), wherein the luminescent material layer is preferably uniformly distributed with phosphorescent particles (丨28), The phosphor particles absorb the light emitted by the zero-emitting wafer (10, 10') and emit light of other wavelengths. The illuminating device of any one of the first to seventh aspects of the invention, wherein the illuminating chip (10, 1 〇,) is thermally coupled to the heat dissipating member (112; 152). The illuminating device of any one of claims 10 to 19, wherein at least one semiconductor structure (12) emits light of a first color, and at least half of the 10 conductor structures (12) emit light of a second color, At least one semiconductor structure (12) emits light of a third color. 2. The illuminating device of claim 20, wherein the first color is red, the second color is green, and the third color is blue. 30