CN107425099B

CN107425099B - Light emitting element

Info

Publication number: CN107425099B
Application number: CN201710505692.9A
Authority: CN
Inventors: 陈世益; 陈威佑; 陈怡名; 林敬倍; 李宗宪
Original assignee: Epistar Corp
Current assignee: Epistar Corp
Priority date: 2012-04-27
Filing date: 2012-04-27
Publication date: 2019-12-13
Anticipated expiration: 2032-04-27
Also published as: CN107425099A; CN103378254A; CN103378254B

Abstract

A light emitting element comprising: a light emitting stack comprising: a first conductivity type semiconductor layer; an active layer on the first electrical semiconductor layer; and a second electrical semiconductor layer located on the active layer; the conducting layer is positioned below the first electrical semiconductor layer, has a width larger than that of the first electrical semiconductor layer, and comprises a first overlapping part overlapped with the first electrical semiconductor layer and a first extending part which is not overlapped with the first electrical semiconductor layer; the transparent conducting layer is positioned on the second electrical semiconductor layer, has a width larger than that of the second electrical semiconductor layer, and comprises a second overlapping part overlapped with the second electrical semiconductor layer and a second extending part which is not overlapped with the second electrical semiconductor layer; a first electrode substantially connected to only the first extension or a portion of the first extension; and a second electrode substantially connected to the second extension or only a portion of the second extension. The light-emitting element has the advantage of increasing light extraction.

Description

Light emitting element

The invention relates to a divisional application of Chinese invention patent application (application number: 201210129336.9, application date: 2012, 4 and 27, and title: light-emitting element).

Technical Field

The present invention relates to a light emitting device, and more particularly, to a light emitting device capable of increasing light extraction.

Background

Fig. 1A and 1B are schematic diagrams of a general light emitting diode, where fig. 1A is a top view and fig. 1B is a side view. In a conventional light emitting diode, a light emitting stack 101 is formed on a substrate 111, and includes a first electrical type semiconductor layer 101a, an active layer 101b, and a second electrical type semiconductor layer 101c in this order from bottom to top. The first conductivity type semiconductor layer 101a and the second conductivity type semiconductor layer 101c are different in conductivity, for example, the first conductivity type semiconductor layer 101a is an n-type semiconductor layer, and the second conductivity type semiconductor layer 101c is a p-type semiconductor layer. A first electrode 104 is disposed on the first conductivity type semiconductor layer 101a, and a second electrode 105 is disposed on the second conductivity type semiconductor layer 101c for transmitting current. In addition, a transparent conductive layer 103 is also disposed on the second electrical type semiconductor layer 101c to serve as an ohmic contact layer. At present, both metal and transparent conductive materials can be applied to LED elements as ohmic contact materials, but metal has the advantage of good current transmission but has the defect of light absorption, while transparent conductive materials have the advantage of light transmission, but the current transmission is not as good as that of metal. Therefore, the conventional solution is to use the transparent conductive layer 103 as an ohmic contact and use a metal line as the extension electrode 105a to transmit current. With the extended electrode 105a design with metal lines, good current spreading can be achieved, but the shading of the metal is also increased, thus leading to loss of brightness.

disclosure of Invention

Accordingly, the present invention provides a light emitting device, which can reduce the luminance loss and increase the light extraction.

A light emitting element comprising: a light emitting stack having a length and a width, comprising: a first conductivity type semiconductor layer; an active layer on the first electrical semiconductor layer; and a second electrical semiconductor layer located on the active layer; the conducting layer is positioned below the first electrical semiconductor layer, has a width larger than that of the first electrical semiconductor layer, and comprises a first overlapping part overlapped with the first electrical semiconductor layer and a first extending part which is not overlapped with the first electrical semiconductor layer; the transparent conducting layer is positioned on the second electrical semiconductor layer, has a width larger than that of the second electrical semiconductor layer, and comprises a second overlapping part overlapped with the second electrical semiconductor layer and a second extending part which is not overlapped with the second electrical semiconductor layer; a first electrode substantially connected to only the first extension or a portion of the first extension; and a second electrode substantially connected to the second extension or only a portion of the second extension.

In the light emitting device of the present invention, the first electrode is substantially only connected to the first extension portion of the conductive layer or a portion thereof, and the second electrode is substantially only connected to the second extension portion of the transparent conductive layer or a portion thereof, i.e., the second overlapping portion of the transparent conductive layer does not have the second electrode or the extension electrode, so that there is no luminance loss caused by metal shading, thereby increasing light extraction.

The foregoing description is only an overview of the technical solutions of the present invention, and in order to make the technical means of the present invention more clearly understood, the present invention may be implemented in accordance with the content of the description, and in order to make the above and other objects, features, and advantages of the present invention more clearly understood, the following preferred embodiments are described in detail with reference to the accompanying drawings.

Drawings

FIG. 1A: a top view of a prior art LED is shown.

FIG. 1B: a side view of a prior art led is shown.

Fig. 2A to 2F: a method of forming a light emitting diode and a structure thereof according to a first embodiment of the present invention are illustrated.

Fig. 3A to 3E: a light emitting diode forming method and a structure according to a second embodiment of the present invention are illustrated.

Fig. 4A to 4D: a light emitting diode forming method and a structure according to a third embodiment of the present invention are illustrated.

FIG. 5: the light emitting device formed by the light emitting diode according to the embodiment of the invention is illustrated.

Fig. 6A to 6I: a light emitting diode forming method and a structure according to a fourth embodiment of the present invention are illustrated.

FIG. 7: the light emitting diode structure of the fifth embodiment of the present invention is shown.

Detailed Description

Fig. 2A to 2F illustrate a first embodiment of the present invention, as shown in fig. 2A, a light emitting stack 201 is formed on a substrate 211, and the light emitting stack 201 sequentially includes a first electrical type semiconductor layer 201a, an active layer 201b, and a second electrical type semiconductor layer 201c from bottom to top. The first conductivity type semiconductor layer 201a and the second conductivity type semiconductor layer 201c are different in conductivity, for example, the first conductivity type semiconductor layer 201a is an n-type semiconductor layer, and the second conductivity type semiconductor layer 201c is a p-type semiconductor layer. Then, a portion of the self-light emitting layer 201 is taken for subsequent steps. For example, by using epitaxial Lift-Off (ELO), as shown in fig. 2A, the dividing line 213 and the dividing line 213' are formed between the C portion to be taken and the adjacent remaining L portion and R portion by laser cutting or photolithography and etching for facilitating the subsequent Lift-Off. A temporary substrate 212, such as glass, is then provided to be bonded to the portion C to be accessed. The bonding method may be, for example, forming a bonding material (not shown) between the bonding surfaces 215 (shown in fig. 2B), and heating and pressing the temporary substrate 212 and the substrate 211 to bond them. The bonding material may be a conductive material or a non-conductive material, and the conductive material may include a metal or an alloy material, such as gold, silver, or tin or an alloy thereof. The non-conductive substance includes, for example, Polyimide (PI), benzocyclobutene (BCB), Perfluorocyclobutane (PFCB), Epoxy (Epoxy), other organic adhesive material, and the like. The bonding method is well known in the art and will not be described in detail. After the bonding is formed, a laser beam 214 is applied to the interface between the portion to be taken and the substrate 211, and the portion to be taken is lifted upwards by the bonding of the temporary substrate 212, as shown in fig. 2B, thereby completing the epitaxial lift step. As shown in fig. 2B, the removed light emitting stack 201 has a length L and a width W, and the x-axis is parallel to the length L and the y-axis is parallel to the width W.

Next, as shown in FIG. 2C, a permanent substrate 206 is provided. The permanent substrate 206 may be a conductive substrate, which may be a semiconductor material such as silicon (silicon), silicon carbide, or a metal, or a non-conductive substrate. The non-conductive substrate may be, for example, sapphire (Al)₂O₃) Glass, or ceramic material. In the present embodiment, a silicon substrate 206b commonly used in the art is selected, and the present embodiment is a horizontal structure, so an insulating layer 206a, such as silicon oxide, is formed on the silicon substrate to form the permanent substrate 206 of the present embodiment. Then, a conductive layer 202 is formed on the permanent substrate 206, and the width W' of the conductive layer 202 is greater than the width W of the removed light emitting stack 201. The conductive layer 202 may be, for example, a metal or a metal oxide or a stack of both. The metal may be indium (In), gold (Au), titanium (Ti), platinum (Pt), aluminum (Al), silver (Ag), or an alloy thereof, or a stack thereof. The metal oxide is, for example, Indium Tin Oxide (ITO). The removed light emitting stack 201 is then bonded to the conductive layer 202. The bonding is, for example, first of all luminescenceA bonding layer 208 is formed over the stack 201 and then bonded to the conductive layer 202. In one embodiment, the bonding layer 208 is Indium Tin Oxide (ITO), and the conductive layer 202 is a stack of titanium (Ti)/gold (Au)/silver (Ag)/Indium Tin Oxide (ITO) from bottom to top. The bonding layer 208 may also contain a reflective metal to serve as a mirror, for example, a stack of silver (Ag)/titanium (Ti)/platinum (Pt)/gold (Au) layers is formed on the light emitting stack 201 as the bonding layer 208, and the conductive layer 202 is a stack of titanium (Ti)/gold (Au)/indium (In) layers from bottom to top. Similarly, the bonding can be completed by heating and pressing, and a laser beam can be applied to the interface between the light-emitting laminated layer 201 and the temporary substrate 212 by the laser beam irradiation method as described above to remove the temporary substrate 212. As shown in fig. 2D, the conductive layer 202 is located under (the first electrical type semiconductor layer 201a (not shown in this figure, please refer to fig. 2A)) of the light emitting stack 201, and since the width W' of the conductive layer 202 is greater than the width W of the light emitting stack 201, the conductive layer 202 can be regarded as including a first overlapping portion 202A overlapping with the first electrical type semiconductor layer 201a and a first extending portion 202b not overlapping with the first electrical type semiconductor layer 201a, and the first extending portion 202b extends in a first direction (+ y direction) parallel to the width. Next, an insulating layer 207 is formed on one sidewall of the light emitting stack 201 and the conductive layer 202 by, for example, a Chemical Vapor Deposition (CVD) method or an electron beam (E-Gun) method in combination with, for example, a photolithography and etching method or a Lift-Off (Lift-Off) method, as shown in the figure. The material of the insulating layer 207 can be silicon dioxide (SiO)₂) Silicon nitride (SiN)_x) Alumina (Al)₂O₃) And the like.

Next, as shown in fig. 2E, a transparent conductive layer 203 is formed on (a second electrical semiconductor layer 201c (not shown, see fig. 2A)) of the light emitting stack 201, and similarly, the transparent conductive layer 203 has a width greater than that of the second electrical semiconductor layer 201 c. Therefore, the transparent conductive layer 203 can be regarded as including a second overlapping portion 203a overlapping the second electrical semiconductor layer 201c and a second extending portion 203b not overlapping the second electrical semiconductor layer 201c, and the second extending portion 203b extends in a second direction (-y direction) parallel to the width, the second direction (-y direction) being opposite to the first direction (+ y direction). Transparent conductive layer 203 exampleSuch as a metal oxide or a thin metal having a thickness of less than 500 angstroms. The metal Oxide is, for example, Indium Tin Oxide (ITO), Aluminum Zinc Oxide (AZO), cadmium Tin Oxide, antimony Tin Oxide, Zinc Oxide (ZnO), Indium Zinc Oxide (IZO), Zinc Tin Oxide (ZTO), or the like, or a group thereof. The thin metal is, for example, aluminum, gold, platinum, zinc, silver, nickel, germanium, indium, tin or alloys of these metals. Finally, as shown in fig. 2F, a first electrode 204 is formed on the first extension 202b, and a second electrode 205 is formed on the second extension 203 b. It should be noted that, as shown in the figure, the first electrode 204 is substantially only connected to the first extension 202b of the conductive layer 202 or a portion thereof, and the second electrode 205 is substantially only connected to the second extension 203b of the transparent conductive layer 203 or a portion thereof, i.e., the second overlapping portion 203a where the transparent conductive layer 203 overlaps the second electrical semiconductor layer 201c does not have the second electrode 205 or any extension electrode of the prior art, so that there is no brightness loss caused by metal shading. Therefore, the conduction in the direction parallel to the width (y direction) of the light emitting stack 201 of the present embodiment is substantially completed only by the second overlapping portion 203a of the transparent conductive layer 203. The thickness of the transparent conductive layer 203, for example indium tin oxide, is generally between 50nm and 1 μm, and commonly 120nm, for example, at this thickness, the distance for conducting (or transferring charge) is about 30 μm to 100 μm (i.e., 0.1 mm). Therefore, the width W of the light emitting laminate 201 of the present embodiment can be designed to be about 100 μm (i.e. 0.1mm), and 42mil (about 1mm, i.e. 1mm) for general commercial use²) For the light emitting stack with the area specification in the present embodiment, the length L of the light emitting stack 201 can be extended to provide the same light emitting area, so that the current is transmitted by using the excellent current diffusion characteristic of the metal of the second electrode 205, and then the current is transmitted to the light emitting stack 201 by using the transparent conductive layer 203 with high light transmittance, so that the current can be uniformly transmitted and the light shielding of the light emitting area due to the metal of the electrode or the extension electrode is avoided. The length L of the light emitting stack 201 can thus be designed to be about 10mm, (1 mm)²10 mm/0.1 mm) so the ratio of length L to width W is 10mm to 0.1mm, i.e. 100 to 1. Generally, as the thickness of the ITO layer 203 is thicker, the conducting distance is longer, so the width W can be designedThe length L of the corresponding design is smaller than that of the previous example, if the width of the design is larger than that of the previous example, or if the design parameters such as the light-emitting area are adjusted to be smaller than that of the previous example. For example, if the width W is enlarged by 2 times as compared with the above example and the length L is reduced to 1/10 of the above example, the ratio of the length L to the width W of the light-emitting stack 201 is greater than about 5: 1.

Fig. 3A to 3E show a second embodiment of the present invention. This second embodiment is a modification of the first embodiment described above. In the first embodiment, as shown in fig. 2F, the first electrode 204 is formed on the first extension 202b, and the second electrode 205 is formed on the second extension 203 b. In the present second embodiment, as shown in fig. 3E, the first electrode 304 is formed under the first extension 302b, and the second electrode 305 is formed under the second extension 303 b. In the second embodiment, the permanent substrate 206 formed of the silicon substrate 206a having the insulating layer 206b formed thereon in the first embodiment is replaced with a permanent substrate 306 formed of glass. Otherwise, the second embodiment is substantially the same as the first embodiment. Thus, referring to the method as described in the first embodiment of fig. 2A to fig. 2E, the structure of fig. 3A similar to fig. 2E can be obtained, which includes a permanent substrate 306 made of glass, a conductive layer 302, a light-emitting stack 301, an insulating layer 307, and a transparent conductive layer 303. Next, as shown in FIG. 3B, the structure of FIG. 3A is bonded to a temporary substrate 362 via a bonding material 361 for subsequent electrode formation. Next, as shown in FIG. 3C, a protective layer (not shown) such as photoresist is formed on the permanent substrate 306, but the portions 306a and 306b where the electrodes are to be formed are exposed, and the permanent substrate 306 at the portions 306a and 306b where the electrodes are to be formed is removed by photolithography and etching or sand blasting or a mixture thereof, wherein the portion 307a where the insulating layer 307 is connected with the portion 306a where the electrodes are to be formed is also removed. This exposes portions of the conductive layer 302 and portions of the transparent conductive layer 303 for subsequent formation of first electrodes 304 and second electrodes 305 thereon, as shown in fig. 3D. For some applications, the bonding material 361 and the temporary substrate 362 may remain. In this embodiment, the bonding material 361 and the temporary substrate 362 are removed by irradiating the bonding material 361 with the laser beam or etching, so as to complete the structure of the second embodiment shown in FIG. 3E. Similarly, in the present embodiment, the first electrode 304 is substantially only connected to the first extension portion 302b of the conductive layer 302 or a portion thereof, and the second electrode 305 is substantially only connected to the second extension portion 303b of the transparent conductive layer 303 or a portion thereof, i.e. the second overlapping portion 303a of the transparent conductive layer 303 does not have the second electrode 305 or the extension electrode, so that there is no brightness loss caused by metal shading.

Fig. 4A to 4D show a third embodiment of the present invention. This third embodiment is also a variation of the first embodiment described above. In the first embodiment, as shown in fig. 2F, the first electrode 204 is formed on the first extension 202b, and the second electrode 205 is formed on the second extension 203 b. In the present third embodiment, as shown in fig. 4C, the first electrode 404 is formed below the first extension portion 402b, and the second electrode 405 is formed above the second extension portion 403 b. In addition, in the third embodiment, the permanent substrate 206 formed by the silicon substrate 206b with the insulating layer 206a on the top in the first embodiment is changed to a permanent substrate 406 formed by a transparent material, for example, a dielectric material such as glass. Otherwise, the third embodiment is substantially similar to the first embodiment. Thus, referring to the method as described in the first embodiment of fig. 2A to fig. 2E, the structure of fig. 4A similar to fig. 2E can be obtained, which includes a permanent substrate 406 made of glass, a conductive layer 402, a light emitting stack 401, an insulating layer 407, and a transparent conductive layer 403. It should be noted that the conductive layer 402 of the present embodiment is made of Indium Tin Oxide (ITO), so the light emitting stack 401 is bonded to the conductive layer 402 by forming a bonding layer 408, such as Indium Tin Oxide (ITO), on the light emitting stack 401 as mentioned in the first embodiment. It should be noted that the conductive layer 402 on the permanent substrate 406 is entirely covered, so that, in contrast to the first embodiment, the conductive layer 402 can be regarded as including another third extending portion 402c in addition to the first overlapping portion 402a and the first extending portion 402 b. Similarly, the transparent conductive layer 403 can be regarded as including a second overlapping portion 403a, a second extending portion 403b, and another fourth extending portion 403 c. In the present embodiment, the first extension portion 402b and the second extension portion 403b extend in the same direction (y direction). The third extension portion 402c and the fourth extension portion 403c extend in the same direction (+ y direction).

Next, as shown in fig. 4B, another transparent substrate 462 made of a dielectric material, such as glass, is formed with a transparent conductive layer 403 'made of Indium Tin Oxide (ITO), and then bonded to the structure of fig. 4A, such that the transparent conductive layer 403' made of Indium Tin Oxide (ITO) is bonded to the transparent conductive layer 403 made of Indium Tin Oxide (ITO). Next, as shown in fig. 4C, a portion of the permanent substrate 406 and a portion of the transparent substrate 462 are removed by photolithography and etching or sand blasting or a combination thereof, so as to expose a portion of the conductive layer 402 and a portion of the transparent conductive layer 403 ', and form a first electrode 404 under the first extension 402b and a second electrode 405 on the transparent conductive layer 403', thereby completing the third embodiment.

As shown in fig. 4C, in the third embodiment, the first electrode 404 has a first surface (contacting with the PP ') perpendicular to the first extension 402b, the second electrode 405 has a second surface (contacting with the PP') perpendicular to the second extension 403b, and the first surface and the second surface are substantially coplanar, i.e. coplanar. Thus, the first surface and the second surface can be bonded to a carrier (not shown), which is a PP' plane. In application, when such a device is rotated by 90 degrees, as shown in fig. 4D, the light emitted from the light emitting stack 401 can be transmitted in multiple directions, and the permanent substrate 406, the transparent substrate 462 and the insulating layer 407 made of transparent materials are all transparent, so that the device has the advantage of full-wave light.

As shown in fig. 5, the light emitting devices of the three embodiments can be further combined with other devices to form a light emitting device 500. The light-emitting device 500 comprises a sub-mount 510 having at least one circuit 511,512,513, 514; at least one light emitting element is located on the sub-carrier 510, in this embodiment, 3 light emitting elements 501,502,503 are disposed on the sub-carrier 510, any one of the light emitting elements 501,502,503 can be any one of the light emitting elements of the above three embodiments, and electrodes of the light emitting elements 501,502,503 can be bonded to the circuits 511,512,513,514 of the sub-carrier 510 by solder (not shown), for example, two electrodes 501a,501b of the light emitting element 501 are respectively bonded to the circuits 511, 512; the two electrodes 502a,502b of the light-emitting element 502 are bonded to circuits 512,513, respectively; the two electrodes 503a,503b of the light emitting device 503 are respectively bonded to the circuits 513,514, so as to fix the light emitting devices 501,502,503 on the submount 510, and the light emitting devices 501,502,503 form a circuit in series (as in this embodiment) or in parallel or in series and parallel through the circuits 511,512,513,514, and provide an external power source to the device 500 through the conductive material structures 521,522, such as gold wire or copper wire. The sub-carrier 510 is, for example, ceramic, glass fiber, Bakelite (Bakelite), or the like.

In addition to the above embodiments, the electrodes and the extension electrodes on the light emitting stack layer can be moved to the light emitting stack layer by a process method, and only a small area is left for electrical connection, so as to achieve the effect of minimizing the light shielding area, thereby solving the problem of metal light shielding. An example of which is a fourth embodiment of the present invention shown in fig. 6A to 6I. In fig. 6A, a light emitting stack 601 including a first electrical type semiconductor layer 601a, an active layer 601b, and a second electrical type semiconductor layer 601c is sequentially formed on a substrate 611, and an intermediate layer structure 681, such as a buffer layer, may be optionally formed before the light emitting stack 601 is formed. Then, a contact layer 604 is formed on the light emitting stack 601, and the contact layer 604 may be, for example, a transparent conductive oxide or a metal; the transparent conductive Oxide is, for example, Indium Tin Oxide (ITO), Aluminum Zinc Oxide (AZO), cadmium Tin Oxide, antimony Tin Oxide, Zinc Oxide (ZnO), Indium Zinc Oxide (IZO), Zinc Tin Oxide (ZTO), or the like, or a group thereof; the metal is, for example, aluminum, gold, platinum, zinc, silver, nickel, germanium, indium, tin, beryllium, platinum, rhodium or alloys of these metals. When the metal is selected from high-reflectivity metal, such as aluminum, silver, etc., the metal can provide the function of a reflector; alternatively, a reflective structure (not shown) such as a Distributed Bragg Reflector (DBR) or an Omni-Directional Reflector (ODR) may be optionally added to the contact layer 604 to provide a reflective function. Then, a contact layer removing region 604a is formed by removing a portion of the contact layer 604 by photolithography and etching. Next, as shown in fig. 6B, a protection layer 659 is formed on the contact layer 604, and the protection layer 659 fills the contact layer removal region 604a, wherein two portions of the contact layer 604 not covered by the protection layer 659 are left as electrodes, i.e., the first electrode 604' and the second electrode 604 ″. Next, as shown in FIG. 6C, the structure of FIG. 6B is bonded to the temporary substrate 682 by a bonding material 683 for subsequent processing. Then, a laser beam (not shown) is irradiated onto the interface between the substrate 611 and the intermediate layer structure 681 by the aforementioned laser irradiation method to remove the substrate 611, and the removal of the substrate 611 can also be completed by the etching process. The structure after the substrate 611 is removed is shown in fig. 6D.

Next, as shown in fig. 6E, portions of the intermediate layer structure 681 and the light-emitting stack 601 are removed by photolithography and etching to form an isolation region 684, and the underlying contact layer 604 and the passivation layer 659 (filled in the contact layer removal region 604 a) are exposed. Thus, a whole large-area light-emitting stack 601 is divided into a plurality of relatively small-area light-emitting units, which are divided into two relatively small-area light-emitting units in the embodiment, and the two light-emitting units are isolated from each other by isolation regions 684. Next, as shown in FIG. 6F, an insulating layer 685, such as silicon dioxide (SiO) is formed over the structure of FIG. 6E₂) Silicon nitride (SiN)_x) Or aluminum oxide (Al)₂O₃) Then, a portion of the insulating layer 685 is removed by photolithography and etching to form an electrical connection region 685a, and the underlying contact layer 604 (in some cases, the protective layer 659 (filled in the contact layer removal region 604 a) may be exposed) is exposed, and the surface of the intermediate layer 681 is substantially completely exposed, so that light emitted from the light-emitting stack 601 can be emitted. Thus, the insulating layer 685 electrically isolates each light-emitting unit, and the light-emitting units are electrically connected in series or in parallel or both through the conductive layer subsequently filled in the electrical connection region 685 a. As shown in fig. 6G, a conductive layer 686, such as aluminum, gold, platinum, zinc, silver, nickel, germanium, indium, tin, or alloys thereof, is formed over the structure of fig. 6F, and portions of the conductive layer 686 are removed by photolithography and etching to form the electrical connections. This embodiment shows the electrical connection in series. The conductive layer 686 is filledelectrically connected to electrical connection 685a and exposed contact 604, and the other end (i.e., 605) of conductive layer 686 is connected to a portion of the surface of intermediate layer structure 681. In addition, as shown in fig. 6G, before the conductive layer 686 is formed, the transparent conductive layer 603 may be optionally formed on the upper surface of the intermediate layer structure 681, so that the other end (605) of the conductive layer 686 is in contact with the surface of the transparent conductive layer 603 in this embodiment. As described above, since the large-area light-emitting stack 601 is divided into a plurality of relatively small-area light-emitting units, the width (W) of each light-emitting unit becomes smaller and is within the distance range for effectively transmitting the current, in the case of having the transparent conductive layer 603, it is not necessary to provide an extension electrode on each light-emitting unit, and the end point (i.e., 605) of the conductive layer 686 electrically connected to the light-emitting stack 601 can be designed to be small, so that the current can be uniformly transmitted and the light-emitting area can be prevented from being blocked by the metal of the electrode or the extension electrode. Similarly, the aspect ratio of each light-emitting unit (e.g., the ratio of the length to the width of the light-emitting stack is greater than about 5:1) may be determined as appropriate to provide a generally suitable light-emitting area. In addition, since the present embodiment can be implemented in different modes such as series-parallel connection, even though the aspect ratio of each light-emitting unit is not adjusted, the light-emitting area of the general commercial specification can be provided by connecting an appropriate number of light-emitting units in series. Next, as shown in fig. 6H, the structure of fig. 6F is bonded to a transparent substrate 606 made of a transparent material such as glass through a transparent bonding material 607, such as Polyimide (PI), benzocyclobutene (BCB), and Perfluorocyclobutane (PFCB), to form a light-emitting surface. Next, the temporary substrate 682 and the bonding material 683 are removed, for example, by etching, as shown in fig. 6I, thereby completing the present embodiment. The series connection of the light emitting units is as described above, and the external power source can be provided through the first electrode 604' and the second electrode 604 ″. In the embodiment of the series connection, through the above-mentioned methods shown in fig. 6A to 6I, the skilled person can make simple adjustments to the processes, such as the adjustment to the contact layer removing region 604a in fig. 6A, the adjustment to the isolation region 684 formed in fig. 6E, and the removal adjustment to the conductive layer 686 in fig. 6G, so as to obtain the parallel connection of the fifth embodiment of the present invention shown in fig. 7In the embodiment, in which the first code of the reference numeral in fig. 6I is changed from "6" to "7", for example, the reference numeral 606 is a transparent substrate 606, the reference numeral 706 is also a transparent substrate, and so on, and it is not needless to say that this fifth embodiment is described. It should be noted that the contact layer 704 of the middle block (i.e. the contact layer 704 electrically connected to the first electrical type semiconductor layer 701a through the conductive layer 786) is a first electrode connected in series, and the contact layers 704 of the two side blocks (i.e. the contact layers 704 electrically connected to the second electrical type semiconductor layer 701 c) are second electrodes connected in series (connected by the electrode pattern configuration on the front side), so as to form a parallel connection of the two light emitting units.

Although the present invention has been described with reference to a preferred embodiment, it should be understood that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.

Claims

1. A light emitting element comprising:

A substrate;

A light emitting stack on the substrate, the light emitting stack having a length, a width, a first conductivity type semiconductor layer, an active layer on the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer on the active layer, wherein the first conductivity type semiconductor layer, the active layer, and the second conductivity type semiconductor layer are stacked along a stacking direction;

A conductive layer including a first overlapping portion overlapping the first electrical type semiconductor layer and a first extending portion not overlapping the first electrical type semiconductor layer;

The transparent conducting layer is positioned on the second electrical semiconductor layer and comprises a second overlapping part overlapped with the second electrical semiconductor layer and a second extending part which is not overlapped with the second electrical semiconductor layer;

A first electrode connected to the first extension portion;

a second electrode connected to the second extension portion; and

an insulating layer located between the transparent conductive layer and the substrate and connected with the side walls of the light-emitting laminated layer and the first overlapping part;

Wherein the first electrode or the second electrode does not overlap with the light emitting stack in the stacking direction.

2. The light-emitting element according to claim 1, wherein a thickness of the first electrode or the second electrode is larger than that of the light-emitting stack.

3. the light-emitting element according to claim 1, wherein the insulating layer comprises a transparent material.

4. The light-emitting device according to claim 1, wherein the first electrode and the second electrode are substantially coplanar.

5. The light-emitting device according to claim 1, further comprising a carrier connected to the first electrode and the second electrode.

6. The light-emitting device according to claim 5, wherein the stacking direction is substantially parallel to a surface of the carrier contacting the light-emitting device.

7. The light-emitting device according to claim 1, wherein the conductive layer has a width greater than a width of the light-emitting stack.

8. The light-emitting element according to claim 1, wherein the transparent conductive layer has a width larger than that of the light-emitting stack.