CN103378254B - Light-emitting component - Google Patents
Light-emitting component Download PDFInfo
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- CN103378254B CN103378254B CN201210129336.9A CN201210129336A CN103378254B CN 103378254 B CN103378254 B CN 103378254B CN 201210129336 A CN201210129336 A CN 201210129336A CN 103378254 B CN103378254 B CN 103378254B
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- 239000004065 semiconductor Substances 0.000 claims abstract description 62
- 238000003475 lamination Methods 0.000 claims abstract description 52
- 229910052751 metal Inorganic materials 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 30
- 230000004888 barrier function Effects 0.000 claims description 16
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 210000004276 hyalin Anatomy 0.000 claims 4
- 230000008901 benefit Effects 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 139
- 239000000758 substrate Substances 0.000 description 39
- 238000000034 method Methods 0.000 description 17
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 14
- 239000010931 gold Substances 0.000 description 12
- 238000005530 etching Methods 0.000 description 10
- 239000011521 glass Substances 0.000 description 10
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 10
- 230000013011 mating Effects 0.000 description 9
- 239000000126 substance Substances 0.000 description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 8
- 239000010936 titanium Substances 0.000 description 8
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 239000004332 silver Substances 0.000 description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 238000013461 design Methods 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 229910052709 silver Inorganic materials 0.000 description 5
- 239000011135 tin Substances 0.000 description 5
- 239000012780 transparent material Substances 0.000 description 5
- -1 ITO) Chemical compound 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 4
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 4
- 238000005286 illumination Methods 0.000 description 4
- 229910052719 titanium Inorganic materials 0.000 description 4
- 229910001020 Au alloy Inorganic materials 0.000 description 3
- 229910001260 Pt alloy Inorganic materials 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 3
- 239000004411 aluminium Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000008859 change Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 229910052697 platinum Inorganic materials 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 229910052718 tin Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- 229910001316 Ag alloy Inorganic materials 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229920001342 Bakelite® Polymers 0.000 description 2
- 229910000927 Ge alloy Inorganic materials 0.000 description 2
- 229910000846 In alloy Inorganic materials 0.000 description 2
- 229910000990 Ni alloy Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 229910001128 Sn alloy Inorganic materials 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910001297 Zn alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- GVFOJDIFWSDNOY-UHFFFAOYSA-N antimony tin Chemical compound [Sn].[Sb] GVFOJDIFWSDNOY-UHFFFAOYSA-N 0.000 description 2
- 239000004637 bakelite Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000005488 sandblasting Methods 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- 229910000967 As alloy Inorganic materials 0.000 description 1
- 229910000952 Be alloy Inorganic materials 0.000 description 1
- ANVRDUDUNKHRMI-UHFFFAOYSA-N C1CCC1.[F] Chemical compound C1CCC1.[F] ANVRDUDUNKHRMI-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 244000247747 Coptis groenlandica Species 0.000 description 1
- 235000002991 Coptis groenlandica Nutrition 0.000 description 1
- PMPVIKIVABFJJI-UHFFFAOYSA-N Cyclobutane Chemical compound C1CCC1 PMPVIKIVABFJJI-UHFFFAOYSA-N 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 235000006508 Nelumbo nucifera Nutrition 0.000 description 1
- 240000002853 Nelumbo nucifera Species 0.000 description 1
- 235000006510 Nelumbo pentapetala Nutrition 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910000629 Rh alloy Inorganic materials 0.000 description 1
- CSBHIHQQSASAFO-UHFFFAOYSA-N [Cd].[Sn] Chemical compound [Cd].[Sn] CSBHIHQQSASAFO-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- CXKCTMHTOKXKQT-UHFFFAOYSA-N cadmium oxide Inorganic materials [Cd]=O CXKCTMHTOKXKQT-UHFFFAOYSA-N 0.000 description 1
- CFEAAQFZALKQPA-UHFFFAOYSA-N cadmium(2+);oxygen(2-) Chemical compound [O-2].[Cd+2] CFEAAQFZALKQPA-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000012811 non-conductive material Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000010948 rhodium Substances 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
A kind of light-emitting component, including：One luminous lamination, including：One first conductivity type semiconductor layer；One active layer is located on the first conductivity type semiconductor layer；And one second conductivity type semiconductor layer be located at active layer on；One conductive layer is located under the first conductivity type semiconductor layer, and the width of the first conductivity type semiconductor layer, including one first overlapping portion overlapping with the first conductivity type semiconductor layer and one first not overlapping with first conductivity type semiconductor layer extension are more than with a width；One transparency conducting layer is located on the second conductivity type semiconductor layer, and the width of the second conductivity type semiconductor layer, including one second overlapping portion overlapping with the second conductivity type semiconductor layer and one second not overlapping with the second conductivity type semiconductor layer extension are more than with a width；One first electrode substantially only connects with some of the first extension or the first extension；And one second electrode substantially only connect with some of the second extension or the second extension.The light-emitting component of the present invention has the advantages that light taking-up can be increased.
Description
Technical field
The present invention be on light-emitting component, especially with respect to can increase light taking-up light-emitting component.
Background technology
As illustrated in figures 1A and ib, Figure 1A is top view to the simplified schematic diagram of general light-emittingdiode, and Figure 1B is side view.
General light-emittingdiode is that a luminous lamination 101 is formed on substrate 111, from bottom to top sequentially includes the first electrical semiconductor
Layer 101a, active layer 101b and the second conductivity type semiconductor layer 101c.First conductivity type semiconductor layer 101a and the second electrical semiconductor
Layer 101c is electrically different, and for example the first conductivity type semiconductor layer 101a is n-type semiconductor layer, and the second conductivity type semiconductor layer 101c is
P-type semiconductor layer.A first electrode 104 is provided with the first conductivity type semiconductor layer 101a respectively, and in the second electrical semiconductor
Layer 101c is provided with a second electrode 105 to transmit electric current.In addition, also transparent provided with one on the second conductivity type semiconductor layer 101c
Conductive layer 103 is thought as ohmic contact layer.Current metal and transparent conductive material all can be applicable to LED element and connect as ohm
Material is touched, simply metal has the advantages that good electric current transmission has the shortcoming of extinction, though and transparent conductive material has thoroughly
The advantage of light, but electric current transmission is then not so good as metal.So current settling mode is to do Europe using transparency conducting layer 103 mostly
Nurse is contacted, then metal wire of arranging in pairs or groups simultaneously to be extension electrode 105a to transmit electric current.Set in the extension electrode 105a for having metal wire
Under meter, good current spread can be reached, but also increases the shading of metal, thus causes the loss of brightness.
The content of the invention
In view of this, the present invention provides a kind of light-emitting component, it is possible to decrease intensity loss, and increase light takes out.
A kind of light-emitting component, including：One luminous lamination, with a length and a width, including：One first electrical semiconductor
Layer；One active layer is located on the first conductivity type semiconductor layer；And one second conductivity type semiconductor layer be located at active layer on；One leads
Electric layer is located under the first conductivity type semiconductor layer, and the width of the first conductivity type semiconductor layer is more than with a width, including with first
One first overlapping overlapping portion of conductivity type semiconductor layer and one first not overlapping with first conductivity type semiconductor layer extension；One is saturating
Bright conductive layer is located on the second conductivity type semiconductor layer, the width with a width more than the second conductivity type semiconductor layer, including with
One second overlapping overlapping portion of second conductivity type semiconductor layer and one second not overlapping with the second conductivity type semiconductor layer extension；One
First electrode substantially only connects with some of the first extension or the first extension；And one second electrode substantially only with second
The some of extension or the second extension connects.
In the light-emitting component of the present invention, due to first electrode substantially only with the first extension of conductive layer or it is a part of
Connect, and second electrode substantially only connects with the second extension or its some of transparency conducting layer, that is, transparency conducting layer
Do not have second electrode or extension electrode on second overlapping portion, therefore do not have the loss of brightness caused by metal shading, so that
Light taking-up can be increased.
Described above is only the general introduction of technical solution of the present invention, in order to better understand the technological means of the present invention,
And can be practiced according to the content of specification, and in order to allow above and other objects of the present invention, feature and advantage can
Become apparent, below especially exemplified by preferred embodiment, and coordinate accompanying drawing, describe in detail as follows.
Brief description of the drawings
Figure 1A：Illustrate the light-emittingdiode top view of prior art.
Figure 1B：Illustrate the light-emitting diodes body-side view of prior art.
Fig. 2A to 2F：Illustrate the light-emittingdiode forming method and structure of first embodiment of the invention.
Fig. 3 A to 3E：Illustrate the light-emittingdiode forming method and structure of second embodiment of the invention.
Fig. 4 A to 4D：Illustrate the light-emittingdiode forming method and structure of third embodiment of the invention.
Fig. 5：The light-emitting device that the light-emittingdiode of the illustrative application embodiment of the present invention is formed.
Fig. 6 A to 6E：Illustrate the light-emittingdiode forming method and structure of fourth embodiment of the invention.
Fig. 7：Illustrate the LED structure of fifth embodiment of the invention.
Embodiment
Fig. 2 is the first embodiment of the present invention, as shown in Figure 2 A, and luminous lamination 201, hair are first formed on a substrate 211
Light lamination 201 from bottom to top sequentially includes the first conductivity type semiconductor layer 201a, active layer 201b and the second conductivity type semiconductor layer
201c.First conductivity type semiconductor layer 201a and the second conductivity type semiconductor layer 201c are electrically different, such as the first conductivity type semiconductor layer
201a is n-type semiconductor layer, and the second conductivity type semiconductor layer 201c is p-type semiconductor layer.Then self-luminous lamination 201 takes one
Part uses for subsequent step.Its mode can for example lift shifting (Epitaxy Lift-Off, ELO) method with epitaxy, such as
Shown in Fig. 2A, first cut between R parts in the C to be taken parts and the neighbouring L parts retained and with laser or lithographic and etching
Mode is formed such as cut-off rule 213 and cut-off rule 213 ', in order to which shifting is lifted in follow-up.One temporary substrate 212, such as glass are then provided
Glass, to be engaged with the C to be taken parts.The mode of engagement for example can be to utilize to form mating substance (not shown) in engagement
Between face 215 (as shown in Figure 2 B), and to temporary substrate 212 and the temperature-pressure of substrate 211 to engage.Mating substance can be conductive
Material or electron opaque material, conductive materials are for example comprising metal or alloy material, such as gold, silver or tin or its alloy.It is non-conductive
Material is for example comprising polyimides（PI）, benzocyclobutene（BCB）, cross fluorine cyclobutane（PFCB）, epoxy resin (Epoxy), its
His organic binding material etc..The mode of engagement is seldom repeated known by this technical field.In being formed after engagement, it can be intended to
The C parts and the interface of substrate 211 taken impose a laser light illumination 214, while being intended to take by the engagement of temporary substrate 212
C parts are lifted upwards to be pipetted out, and as shown in Figure 2 B, it is rapid that completion epitaxy lifts walk to its situation.As shown in Figure 2 B, this hair removed
There is light lamination 201 length to be L, and width is W, and the x-axis illustrated is parallel to length L, and y-axis is parallel to width W.
Then, there is provided a permanent substrate 206 as shown in Figure 2 C.Permanent substrate 206 can be electrically-conductive backing plate or nonconductive matrix
Plate, electrically-conductive backing plate can be semi-conducting material, carborundum or the metal of such as silicon (silicon).Non-conductive substrate can be example
Such as sapphire (Al2O3), glass or ceramics material.The present embodiment selects the conventional silicon substrate 206b of industry, and the present embodiment is
Horizontal structure, therefore the insulating barrier 206a of a such as silica is initially formed thereon, to constitute the permanent substrate 206 of the present embodiment.
Then a conductive layer 202 is formed on permanent substrate 206, and the width W ' of conductive layer 202 is more than the foregoing luminous lamination removed
201 width W.Conductive layer 202 may, for example, be metal or metal oxide or the lamination of the two.Metal be, for example, indium (In),
The alloy of gold (Au), titanium (Ti), platinum (Pt), aluminium (Al) and silver (Ag) etc. or above-mentioned metal, or the lamination of above-mentioned metal also may be used.Gold
It is, for example, tin indium oxide (ITO) to belong to oxide.Then the foregoing luminous lamination 201 removed is bonded to conductive layer 202.This engagement
Bonding layer 208 is e.g. first formed on luminous lamination 201, conductive layer 202 is then bonded to.One implements such as bonding layer 208
For tin indium oxide (ITO), and conductive layer 202 is is from bottom to top folding for titanium (Ti)/gold (Au)/silver (Ag)/tin indium oxide (ITO)
Layer.Bonding layer 208 can also include reflective metal again, so that as a speculum, this is implemented for example on luminous lamination 201 simultaneously
Formation be sequentially the lamination of silver-colored (Ag)/titanium (Ti)/platinum (Pt)/gold (Au) as bonding layer 208, and conductive layer 202 is by lower
The upper lamination for titanium (Ti)/gold (Au)/indium (In).Likewise it is possible to complete to engage via temperature-pressure, and can thunder as the aforementioned
Light illuminating method is penetrated, a laser light illumination is imposed in the interface of luminous lamination 201 and temporary substrate 212, by temporary substrate 212
Remove.As shown in Figure 2 D, positioned at luminous lamination 201, (the first conductivity type semiconductor layer 201a (is not illustrated in this figure, asked conductive layer 202
Join Fig. 2A)) under, and because the width W ' of conductive layer 202 is more than the width W of luminous lamination 201, therefore conductive layer 202 is visual
For include the first overlapping portion 202a overlapping with the first conductivity type semiconductor layer 201a and not with the first conductivity type semiconductor layer 201a
The first overlapping extension 202b, and this first extension 202b to parallel to width first direction (+y directions) extend.Connect
, arranged in pairs or groups using such as chemical vapor deposition (Chemical Vapor Deposition, CVD) method or electron beam (E-Gun) method
Such as lithographic and etching or photoresistance lift shifting (Lift-Off) method, form insulating barrier 207 in one of luminous lamination 201 and conductive layer 202
Side wall, as shown in the figure.The material of insulating barrier 207 can be such as silica (SiO2), silicon nitride (SiNx), aluminum oxide (Al2O3)
Deng.
Then, as shown in Figure 2 E, in luminous lamination 201, (the second conductivity type semiconductor layer 201c (is not illustrated in this figure, please joined
Transparency conducting layer 203 is formed on Fig. 2A)), and similarly, there is transparency conducting layer 203 width electrically partly to be led more than second
Body layer 201c width.So transparency conducting layer 203, which can be considered, includes second overlapping with the second conductivity type semiconductor layer 201c
Overlapping portion 203a and the second not overlapping with the second conductivity type semiconductor layer 201c extension 203b, and this second extension 203b to
Parallel to the second direction (- y directions) extension of width, second direction (- y directions) and foregoing first direction (+y directions) direction phase
Instead.Transparency conducting layer 203 is, for example, the thin metal that metal oxide or thickness are less than 500 angstroms.Metal oxide is, for example, oxidation
Indium tin (Indium Tin Oxide, ITO), aluminum zinc oxide (Aluminum Zinc Oxide, AZO), cadmium tin, oxidation
The materials such as antimony tin, zinc oxide (ZnO), indium zinc oxide (IZO) and zinc-tin oxide (ZTO) or its group constituted.Thin metal example
Such as it is the alloy of aluminium, gold, platinum, zinc, silver, nickel, germanium, indium, tin or these above-mentioned metals.Finally, as shown in Figure 2 F, the first electricity is formed
Pole 204 is on the first extension 202b, and second electrode 205 is on the second extension 203b.Especially it should be noted that, such as
Shown in figure, first electrode 204 substantially only connects with the first extension 202b of conductive layer 202 or its some, and second electrode
205 substantially only connect with the second extension 203b of transparency conducting layer 203 or its some, that is, transparency conducting layer 203 and the
Extension without second electrode 205 or any prior art on the second overlapping two conductivity type semiconductor layer 201c overlapping portion 203a
Electrode, therefore the loss of brightness caused by metal shading is not had.The direction of the parallel width of lamination 201 therefore the present embodiment lights
The conductive of (y directions) is substantially only completed by the second overlapping portion 203a of transparency conducting layer 203.It is oxidation with transparency conducting layer 203
Exemplified by indium tin, its thickness is typically in the range of 50nm to 1 μm, by taking conventional 120nm as an example, under this thickness, it is conductive (or transmission electricity
Lotus) distance be about 30 μm to 100 μm (i.e. 0.1mm).Therefore the present embodiment lights, the width W of lamination 201 can design about 100 μm
(i.e. 0.1mm), and (about work as 1mm*1mm, i.e. 1mm for the common 42mil*42mil of general business2) area specification it is luminous
For lamination, the present embodiment can elongate the length L of luminous lamination 201, up to identical light-emitting area is provided, so to utilize the
The excellent current spread characteristic transmission electric current of the metal of two electrode 205, recycles the transparency conducting layer 203 of high light peneration to transmit electricity
Flow to luminous lamination 201, just can thus uniformly transfer electric current, but from light-emitting area because of electrode or extension electrode
Metal shading.Therefore the length L of luminous lamination 201 can design about 10mm, (1mm2/ 0.1mm=10mm), therefore length L and width
The ratio between W is 10mm:0.1mm, i.e., 100:1.In general, thicker with the tin indium oxide thickness of transparency conducting layer 203, it is conductive
Distance is longer, such width W design can relatively upper example be width, and or the adjustment on each design parameter such as light-emitting area, for example send out
The relatively upper example of light area adjustment be it is small, then in corresponding design length L also relatively upper example is small.The relatively upper examples of such as width W are enlarged into 2
Times, length L is reduced into the 1/10 of example, then the ratio between length L and width W of the lamination 201 that lights are approximately more than 5:1 i.e. up to above-mentioned
Purpose.
Fig. 3 A to Fig. 3 E show the second embodiment of the present invention.This second embodiment is the change of above-mentioned first embodiment
Type.In the first embodiment, as shown in Figure 2 F, first electrode 204 is formed on the first extension 202b, and second electrode
205 form on the second extension 203b.In this second embodiment, as shown in FIGURE 3 E, first electrode 304 is formed first
Under extension 302b, and second electrode 305 is formed under the second extension 303b.In addition, in this second embodiment, by
The permanent substrate 206 that the silicon substrate 206a that there is insulating barrier 206b top in one embodiment is constituted, is changed to what glass was constituted
Permanent substrate 306.In addition, second embodiment is substantially identical with first embodiment.Therefore, with reference to such as aforementioned first embodiment
Fig. 2A to Fig. 2 E method, will the available Fig. 3 A similar to Fig. 2 E structure, including glass constituted permanent substrate 306,
Conductive layer 302, luminous lamination 301, insulating barrier 307 and transparency conducting layer 303.Then as shown in Figure 3 B, by a mating substance
Fig. 3 A structure is bonded to temporary substrate 362 to carry out the formation of subsequent electrode by 361.Then, as shown in Figure 3 C, shape is passed through
Overcoat (not shown) into a such as photoresistance exposes 306a, 306b in place of electrode to be formed on permanent substrate 306,
And with lithographic and etching or sandblasting or the two method being used in mixed way, it is intended to be formed electrode part 306a, 306b permanent substrate
306 are removed, and 307a is also removed in place of wherein insulating barrier 307 connects with 306a in place of electrode to be formed.So expose portion
The conductive layer 302 of part and the transparency conducting layer 303 of part, first electrode 304 and second electrode 305 subsequently are formed at into it
On, as shown in Figure 3 D.In some applications, mating substance 361 and temporary substrate 362 can retain.And in the present embodiment, then with such as
Foregoing laser light illumination mating substance 361 or the mode of etching, mating substance 361 and temporary substrate 362 are removed, and are completed as schemed
The structure of 3E second embodiment.Similarly, in the present embodiment, first electrode 304 is substantially only prolonged with the first of conductive layer 302
Extending portion 302b or its some connect, and second electrode 305 substantially only with the second extension 303b of transparency conducting layer 303 or its
Some connects, that is, does not have second electrode 305 or extension electrode on the second overlapping portion 303a of transparency conducting layer 303, because
This does not have the loss of brightness caused by metal shading.
Fig. 4 A to Fig. 4 D show the third embodiment of the present invention.This 3rd embodiment is also the change of above-mentioned first embodiment
Type.In the first embodiment, as shown in Figure 2 F, first electrode 204 is formed on the first extension 202b, and second electrode
205 form on the second extension 203b.In this third embodiment, as shown in Figure 4 C, first electrode 404 is formed first
Under extension 402b, and second electrode 405 is formed on the second extension 403b.In addition, in this third embodiment, by
The permanent substrate 206 that the silicon substrate 206b that there is insulating barrier 206a top in one embodiment is constituted, is changed to a transparent material institute
The permanent substrate 406 of composition, transparent material may be, for example, the dielectric materials such as glass.In addition, 3rd embodiment is substantially with
One embodiment is similar.Therefore, with reference to such as aforementioned first embodiment Fig. 2A to Fig. 2 E method, by the available figure similar to Fig. 2 E
4A structure, including glass constituted permanent substrate 406, conductive layer 402, luminous lamination 401, insulating barrier 407 and transparent lead
Electric layer 403.It should be noted that, the conductive layer 402 of the present embodiment using tin indium oxide (ITO), therefore luminous lamination 401 and engagement
Then as being had been mentioned in aforementioned first embodiment, the bonding layer 408 of such as tin indium oxide (ITO) is first formed on luminous lamination 401,
Then it is bonded to conductive layer 402.Another to should be noted that, the conductive layer 402 on permanent substrate 406 is flood covering, therefore is compareed
In first embodiment, conductive layer 402 can be considered another including in addition to the first overlapping portion 402a and the first extension 402b, further including
One the 3rd extension 402c.Similarly, transparency conducting layer 403, which can be considered, includes the second overlapping portion 403a, the second extension
403b and another 4th extension 403c.And in the present embodiment, the first extension 402b and the second extension 403b are to same side
Extend to (- y directions).3rd extension 402c and the 4th extension 403c extends to same direction (+y directions).
Then, as shown in Figure 4 B, by another transparent material, the transparency carrier 462 of the dielectric material such as glass, thereon
Formed after such as transparency conducting layer 403 ' of tin indium oxide (ITO), it is engaged with Fig. 4 A structure, tin indium oxide (ITO)
Transparency conducting layer 403 ' is with being all that the transparency conducting layer 403 of tin indium oxide (ITO) is combined.Then, as shown in Figure 4 C, with lithographic
And etching or sandblasting or the two method being used in mixed way, part permanent substrate 406 and part transparency carrier 462 are removed, exposed to the open air
Go out the conductive layer 402 of part and the transparency conducting layer 403 ' of part, and formed first electrode 404 the first extension 402b it
Under, and second electrode 405 is formed on transparency conducting layer 403 ', complete this third embodiment.
As shown in Figure 4 C, in this third embodiment, first electrode 404 has one perpendicular to the first of the first extension 402b
Surface (and PP ' flat faces touch person), second electrode 405 has one, and perpendicular to the second extension 403b second surface, (and PP ' is flat
The face person of being in contact), and first surface and second surface substantially copline, i.e., common PP ' planes.In this way, this first table can be passed through
Face is bonded in a support plate (not shown) with second surface, and support plate surface is PP ' planes.It is upper in application, such device is revolved
It turn 90 degrees, then as shown in Figure 4 D, the light that luminous lamination 401 is sent can be constituted forever toward multi-direction outflow, including transparent material
All light-permeables such as long substrate 406, transparency carrier 462 and insulating barrier 407, have the advantages that all-round light.
As shown in figure 5, the light-emitting component of three above-mentioned embodiments more can further combine connection with other elements
To form a light-emitting device 500.Light-emitting device 500 includes a secondary carrier with an at least circuit 511,512,513,514
(sub-mount)510；An at least light-emitting component is located on time carrier 510, and 3 light-emitting components are then provided with the present embodiment
501,502,503 on secondary carrier 510, and any of light-emitting component 501,502,503 is three above-mentioned embodiments
Light-emitting component it is any, and can by solder (solder, not shown) by the electrode adhesion of light-emitting component 501,502,503 extremely
On the circuit 511,512,513,514 of secondary carrier 510, two electrode 501a of such as light-emitting component 501,501b is bonded respectively
To circuit 511,512；Two electrode 502a, 502b of light-emitting component 502 are bonded to circuit 512,513 respectively；Light-emitting component
503 two electrode 503a, 503b are bonded to circuit 513,514 respectively, can so fix light-emitting component 501,502,503
In on secondary carrier 510, while light-emitting component 501,502,503 is connected (such as this through the formation of circuit 511,512,513,514
Embodiment) or the circuit that all has of in parallel or connection in series-parallel, and via conducting material structure 521,522, e.g. gold thread or copper cash,
External power source is provided and gives this device 500.Secondary carrier 510 is, for example, ceramics, glass, glass fibre, bakelite (Bakelite) etc..
In addition to the implementation, the electrode and extension electrode on luminous lamination can also be moved on to by processing procedure mode luminous folded
Beyond layer, only stay less region to do electrical connection, reach the effect of shading-area minimization, asked the shading that solves metal
Topic.The fourth embodiment of the present invention of the embodiment as shown in Fig. 6 A to Fig. 6 I.In fig. 6, sequentially formed on substrate 611
Luminous lamination 601 including the first conductivity type semiconductor layer 601a, active layer 601b and the second conductivity type semiconductor layer 601c, in shape
Interlayer structure 681 is optionally initially formed before into luminous lamination 601, such as cushion.Afterwards, in luminous lamination 601
Upper formation contact layer 604, this contact layer 604 may, for example, be transparent conductive oxide or metal；Transparent conductive oxide is for example
For tin indium oxide (Indium Tin Oxide, ITO), aluminum zinc oxide (Aluminum Zinc Oxide, AZO), cadmium oxide
The materials such as tin, antimony tin, zinc oxide (ZnO), indium zinc oxide (IZO) and zinc-tin oxide (ZTO) or its group constituted；
Metal is, for example, the alloy of aluminium, gold, platinum, zinc, silver, nickel, germanium, indium, tin, beryllium, platinum, rhodium or these above-mentioned metals.When metal selection
High reflectivity metal, e.g. aluminium, silver etc. can then provide mirror function simultaneously；Or also optionally then at contact layer
604 add catoptric arrangement (not shown), such as scattered Bragg reflecting layer (Distributed Bragg Reflector, DBR)
Or comprehensive reflecting layer (Omni-Directional Reflector, ODR) etc. is to provide reflection function.Then, with lithographic and
The mode of etching, to remove the contact layer 604 of part, forms contact layer and removes area 604a.Then, as shown in Figure 6B, one is formed
Protective layer 659 is on contact layer 604, and protective layer 659 inserts contact layer and removes area 604a, wherein as illustrated, contact layer
There is unprotected layer 659 at two to be covered on 604, retain and be used to as electrode, i.e. first electrode 604 ' and second electrode 604 ".
Then, as shown in Figure 6 C, Fig. 6 B structure is bonded to temporary substrate 682 subsequently to be made by a mating substance 683
Journey.Then, a laser light (not shown) is imposed in such as foregoing laser light illumination mode and is irradiated in substrate 611 and interlayer structure
681 interface, substrate 611 is removed, and the removal of substrate 611 can also be completed via etch process.Knot after the removal of substrate 611
Structure is as shown in Figure 6 D.
Then as illustrated in fig. 6e, the interlayer structure 681 and luminous lamination 601 of part are moved in the way of lithographic and etching
Remove, to form isolation area 684, and the contact layer 604 under exposing and (foregoing contact layer of inserting removes area 604a's) protection
Layer 659.In this way, the luminous lamination 601 of whole piece large area will be divided into the flat light emission of a plurality of relatively small areas, such as
The present embodiment show the flat light emission for being divided into two relatively small areas, between this two flat light emissions with completely cut off area 684 that
This isolation.Then, as fig 6 f illustrates, an insulating barrier 685 is formed in Fig. 6 E structure, such as silica (SiO2), silicon nitride
(SiNx) or aluminum oxide (Al2O3) etc., then removed the insulating barrier 685 of part in the way of lithographic and etching, electrically connected with being formed
Meeting area 685a, and expose beneath contact layer 604 (may also expose (foregoing to insert contact layer removal area to the open air under some situations
604a's) protective layer 659), and the surface of interlayer structure 681 is also substantially exposed to the open air completely, to allow the luminous issued light of lamination 601
It is able to light extraction.In this way, insulating barrier 685 electrically completely cuts off each flat light emission, and leading for area 685a is electrically connected with via being subsequently stuffed into
The electric connection that electric layer all has each flat light emission formation serial or parallel connection or connection in series-parallel.As shown in Figure 6 G, in Fig. 6 F knot
A conductive layer 686, such as alloy of aluminium, gold, platinum, zinc, silver, nickel, germanium, indium, tin metal or these above-mentioned metals etc. are formed on structure,
The conductive layer 686 of part is removed in the way of lithographic and etching again, to form foregoing electric connection.The present embodiment is display
The electric connection situation of series connection.This conductive layer 686 inserts electric connection area 685a and the contact layer 604 with exposing is formed electrically
Connection, and the part of the other end (i.e. 605) then with the surface of interlayer structure 681 of conductive layer 686 connects.In addition, such as Fig. 6 G
It is shown, before the formation of conductive layer 686, transparency conducting layer 603 is also optionally first formed above interlayer structure 681,
Therefore the other end (605) of conductive layer 686 connects with the surface of transparency conducting layer 603 in the present embodiment.As previously described, because big
The flat light emission of the segmented relatively small area that pluralizes of the luminous lamination 601 of area, the width (W) of each flat light emission becomes
It is small and lie in the distance range that electric current is effectively transmitted, therefore in the case of with transparency conducting layer 603, need not be at each
Extension electrode is set again on flat light emission, and the end points (i.e. 605) that conductive layer 686 is electrical connected with luminous lamination 601 can be designed
Very little, can so uniformly transfer electric current, but from light-emitting area because of the metal shading of electrode or extension electrode.And it is same
Ground, (example lights the ratio between length and the width of lamination the length-width ratio that also can suitably determine each flat light emission as foregoing as the aforementioned
Approximately more than 5:1) light-emitting area to be typically applicable up to offer.Further, since can also to form connection in series-parallel etc. different for the present embodiment
Implement aspect, even if therefore do not adjust the length-width ratio of each flat light emission, via the series winding of an appropriate number of flat light emission, also up to carrying
For the light-emitting area of general commercial standard.Then, as shown in figure 6h, it is such as poly- by Fig. 6 F structure by transparent mating substance 607
The transparency carrier with transparent material such as glass such as acid imide (PI), benzocyclobutene (BCB) and mistake fluorine cyclobutane (PFCB)
606 engage with as exiting surface.Then, temporary substrate 682 and mating substance 683 are removed in the way of such as etching, such as
Shown in Fig. 6 I, the present embodiment is completed.The series winding of wherein each flat light emission is it has been observed that and the offer of external power source then can be via preceding
The first electrode 604 ' and second electrode 604 " stated.The present embodiment is the implementation aspect of series connection, and via above-mentioned Fig. 6 A to Fig. 6 I
Shown method, simple adjustment can be done to processing procedure by being familiar with this those skilled in the art, for example Fig. 6 A contact layer is removed area 604a adjustment,
Fig. 6 E formation isolation area 684 is adjusted and the removal of Fig. 6 G conductive layer 686 is adjusted, you can obtain it is as shown in Figure 7 and
Join the fifth embodiment of the invention of aspect, wherein the first of Fig. 6 I label yard by " 6 " be changed to " 7 ", such as label 606 is transparent
Substrate 606, then label 706 be also similarly transparency carrier, by that analogy, therefore no longer superfluous words introduces this 5th embodiment.And compared with palpus
What is illustrated is the contact layer 704 of centre block (i.e. through connecing of being electrical connected of the conductivity type semiconductor layer 701a of conductive layer 786 and first
Contact layer 704) for series connection first electrode, both sides block contact layer 704 (i.e. under the second conductivity type semiconductor layer 701c and with
Its contact layer 704 being electrical connected) it is the second electrode (can configure and be connected through positive electrode pattern) connected, so constitute two
The parallel connection of flat light emission.
The above described is only a preferred embodiment of the present invention, any formal limitation not is made to the present invention, though
So the present invention is disclosed above with preferred embodiment, but is not limited to the present invention, any to be familiar with this professional technology people
Member, without departing from the scope of the present invention, when the technology contents using the disclosure above make a little change or modification
For the equivalent embodiment of equivalent variations, as long as being the technical spirit pair according to the present invention without departing from technical solution of the present invention content
Any simple modification, equivalent variations and modification that above example is made, in the range of still falling within technical solution of the present invention.
Claims (9)
1. a kind of light-emitting component, it is characterised in that including：
One luminous lamination, with a length and a width, including：
One first conductivity type semiconductor layer；
One active layer is located on first conductivity type semiconductor layer；And
One second conductivity type semiconductor layer is located on the active layer；
One conductive layer is located under first conductivity type semiconductor layer, the width with a width more than the luminous lamination, including with
One first overlapping overlapping portion of first conductivity type semiconductor layer and one first not overlapping with first conductivity type semiconductor layer extension
Portion；
One transparency conducting layer is located on second conductivity type semiconductor layer, and the width of the luminous lamination, bag are more than with a width
Include one second overlapping portion and with second conductivity type semiconductor layer not overlapping one second overlapping with second conductivity type semiconductor layer
Extension；
One first electrode substantially connects with first extension and not connected with first overlapping portion；And
One second electrode substantially connects with second extension and not connected with second overlapping portion,
Wherein, first extension extends to the first direction of the width parallel to the luminous lamination, and second extension is to flat
Row is in the second direction extension of the width of the luminous lamination, and the first direction is opposite with the second direction.
2. light-emitting component as claimed in claim 1, it is characterised in that the length of the luminous lamination is more than or equal to width ratio
5 to 1.
3. light-emitting component as claimed in claim 1, it is characterised in that the first electrode is located under first extension, and
The second electrode is located under second extension, or the first electrode is located on first extension, and the second electrode
On second extension.
4. light-emitting component as claimed in claim 1, it is characterised in that the transparency conducting layer is small comprising metal oxide or thickness
In 500 angstroms of thin metal.
5. light-emitting component as claimed in claim 1, it is characterised in that first extension and second extension are somebody's turn to do to parallel
The first direction extension of the width of luminous lamination, and further include an insulating barrier between first extension and second extension it
Between, and the insulating barrier connects with side wall of the luminous lamination.
6. light-emitting component as claimed in claim 5, it is characterised in that the first electrode is located at the lower section of first extension,
And the second electrode is located at the top of second extension.
7. light-emitting component as claimed in claim 6, it is characterised in that the first electrode includes one perpendicular to first extension
First surface, the second electrode include one perpendicular to second extension second surface, and the first surface with this second
Surface substantially copline.
8. light-emitting component as claimed in claim 7, it is characterised in that the conductive layer further includes one the 3rd extension, and this is transparent
Conductive layer further includes one the 4th extension, the 3rd extension and width from the 4th extension to the parallel luminous lamination the
Two directions extend, and the first direction and the second direction between the 3rd extension and the 4th extension on the contrary, and also put
There is the insulating barrier, the insulating barrier connects with the opposite side wall of the luminous lamination.
9. light-emitting component as claimed in claim 7, it is characterised in that further include one first hyaline layer positioned at the conductive layer it
Under, first hyaline layer connects with the first electrode；One second hyaline layer is located on the transparency conducting layer, second hyaline layer
Connect with the second electrode.
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|---|---|---|---|---|
| CN1210373A (en) * | 1997-07-23 | 1999-03-10 | 夏普公司 | Semiconductor light emitting device |
| CN101681969A (en) * | 2007-06-29 | 2010-03-24 | 欧司朗光电半导体有限公司 | Method for the production of a plurality of optoelectronic components, and optoelectronic component |
| CN102244173A (en) * | 2010-05-14 | 2011-11-16 | 三垦电气株式会社 | Light-emitting element and manufacturing method thereof |
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| JP2006332225A (en) * | 2005-05-25 | 2006-12-07 | Sony Corp | Nitride light emitting diode |
| DE102008025318A1 (en) * | 2008-05-27 | 2009-12-10 | Setrinx S.A.R.L. | Luminescent chip and lighting device with such |
| KR20100066207A (en) * | 2008-12-09 | 2010-06-17 | 삼성엘이디 주식회사 | Semi-conductor light emitting device |
| TWI414088B (en) * | 2009-12-16 | 2013-11-01 | Epistar Corp | Light-emitting device and the manufacturing method thereof |
| CN102142497A (en) * | 2010-01-29 | 2011-08-03 | 联胜光电股份有限公司 | Horizontal light emitting diode and manufacturing method thereof |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1210373A (en) * | 1997-07-23 | 1999-03-10 | 夏普公司 | Semiconductor light emitting device |
| CN101681969A (en) * | 2007-06-29 | 2010-03-24 | 欧司朗光电半导体有限公司 | Method for the production of a plurality of optoelectronic components, and optoelectronic component |
| CN102244173A (en) * | 2010-05-14 | 2011-11-16 | 三垦电气株式会社 | Light-emitting element and manufacturing method thereof |
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| CN103378254A (en) | 2013-10-30 |
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