JP2007142173A - Illuminator - Google Patents

Illuminator Download PDF

Info

Publication number
JP2007142173A
JP2007142173A JP2005334271A JP2005334271A JP2007142173A JP 2007142173 A JP2007142173 A JP 2007142173A JP 2005334271 A JP2005334271 A JP 2005334271A JP 2005334271 A JP2005334271 A JP 2005334271A JP 2007142173 A JP2007142173 A JP 2007142173A
Authority
JP
Japan
Prior art keywords
substrate
light emitting
led
emitting element
lighting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2005334271A
Other languages
Japanese (ja)
Inventor
Kazuo Aoki
和夫 青木
Yukio Yoshikawa
幸雄 吉川
Takekazu Ujiie
建和 氏家
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koha Co Ltd
Original Assignee
Koha Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Koha Co Ltd filed Critical Koha Co Ltd
Priority to JP2005334271A priority Critical patent/JP2007142173A/en
Publication of JP2007142173A publication Critical patent/JP2007142173A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3025—Electromagnetic shielding

Abstract

<P>PROBLEM TO BE SOLVED: To provide an illuminator which can have a small thermal resistance and a high heat radiating effect even when a heat sink or the like is not used, can use a light emitting element in a large current range and cope with an increased output. <P>SOLUTION: The illuminator has a substrate having a high thermal conductivity and a high light transmissivity, a light emitting element mounted on the substrate, and a reflecting member covering the light emitting element for reflecting light emitted from the light emitting element and making the reflected light to pass through the substrate. When the substrate is made of aluminum nitride, sapphire, gallium oxide, or SiC; heat can be efficiently radiated due to a large emissivity, and illumination can be achieved with a high luminance even when the light emitting element is used in its large current range. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、照明装置に関し、特に、ＬＥＤ（Light Emitting Diode）を透光性を有する基板に実装して構成される照明装置に関する。   The present invention relates to a lighting device, and more particularly to a lighting device configured by mounting an LED (Light Emitting Diode) on a light-transmitting substrate.

環境問題、特にエネルギー削減において低消費電力であるＬＥＤは、今後照明用としての需要が見込まれる。照明用のためには従来の数十ミリアンペアでは、蛍光灯と比較して明るさが不十分である。そのため、十分な明るさを確保するには、数百ミリアンペアの領域での使用が必須となる。しかし、数百ミリアンペアを流すと、熱の問題が発生するため、パッケージングにおいて、効率よく熱を逃がす必要がある。   LEDs with low power consumption for environmental problems, especially energy reduction, are expected to be used for lighting in the future. For illumination, the conventional tens of milliamps are insufficient in brightness as compared with fluorescent lamps. Therefore, in order to ensure sufficient brightness, use in the region of several hundred milliamps is essential. However, when a few hundred milliamperes are passed, a heat problem occurs. Therefore, it is necessary to efficiently release heat in packaging.

従来の方法では、基板下にヒートシンクなどを置いて熱を逃がしたり、強制冷風の方法を用いていたが、いずれの方法においても、厚み方向においてスペースが必要となるため、照明器具としても大きくなるという問題がある。また、実装面から効率よくＬＥＤからの光を照射させることが必要である。   In the conventional method, a heat sink or the like is placed under the substrate to dissipate heat, or the method of forced cold air is used. However, in either method, a space is required in the thickness direction, so that it becomes large as a lighting fixture. There is a problem. Moreover, it is necessary to irradiate the light from LED efficiently from the mounting surface.

従来のＬＥＤパッケージングは、配線パターンが形成された絶縁層にＬＥＤをマウントし、絶縁層下には熱伝導性のよい金属基板を装着した照明装置が提案されている。   Conventional LED packaging has proposed an illumination device in which an LED is mounted on an insulating layer on which a wiring pattern is formed, and a metal substrate having good thermal conductivity is mounted under the insulating layer.

そこで、金属基板としては、金属板に絶縁層及び導電性金属箔を順に積層してなる積層物の導電性金属箔をエッチングして導電回路を形成した金属ベース回路基板の金属板の裏面、側面および導電回路の表面にニッケルめっきまたは金めっきを施した金属ベース回路基板が提案されている(例えば、特許文献１参照)。   Therefore, as the metal substrate, the back and side surfaces of the metal plate of the metal base circuit board in which the conductive metal foil of the laminate formed by sequentially laminating the insulating layer and the conductive metal foil on the metal plate is etched to form the conductive circuit. In addition, a metal base circuit board in which the surface of the conductive circuit is nickel-plated or gold-plated has been proposed (see, for example, Patent Document 1).

また、金属ベ−スと、片面に絶縁体を介して設けられた電極とを具備し、絶縁体が第１絶縁層と第２絶縁層とからなり、第１絶縁層がガラス繊維不織布に酸化アルミニウム等からなる無機充填剤混合樹脂を塗布したもので、第２絶縁層が芳香族ポリアミド繊維不織布もしくはガラス繊維混抄芳香族ポリアミド繊維不織布に熱硬化性樹脂を塗布含浸した回路用金属基板が提案されている(例えば、特許文献２参照)。
特開平０６−１２５１５５号公報 特開平０８−２３６８８４号公報 Further, it comprises a metal base and an electrode provided on one side with an insulator interposed therebetween, the insulator comprising a first insulating layer and a second insulating layer, and the first insulating layer is oxidized into a glass fiber nonwoven fabric. A metal substrate for circuits is proposed in which an inorganic filler mixed resin made of aluminum or the like is applied, and the second insulating layer is coated with an aromatic polyamide fiber nonwoven fabric or glass fiber mixed aromatic polyamide fiber nonwoven fabric coated with a thermosetting resin. (For example, refer to Patent Document 2).
Japanese Patent Laid-Open No. 06-125155 Japanese Patent Application Laid-Open No. 08-236884

しかし、従来の装置によれば、発光素子が実装される基板は熱伝導率が小さく、熱抵抗が大きいので放熱効果が悪い。このため、ヒートシンクなどを置いて熱を逃がしたり、強制冷風等が必要となり、照明装置の大きさ、特に厚さ方向に大型化すると共に、発光素子を大電流領域で使用できず、高出力化にも限界が生じていた。   However, according to the conventional apparatus, the substrate on which the light emitting element is mounted has a low thermal conductivity and a high thermal resistance, so that the heat dissipation effect is poor. For this reason, it is necessary to dissipate heat by placing a heat sink, etc., forced cold air, etc., and the size of the lighting device, especially in the thickness direction, is increased, and the light emitting element cannot be used in a large current region, and high output is achieved. There was also a limit.

従って、本発明の目的は、熱抵抗が小さくヒートシンクなどを使用しなくても放熱効果が高く、発光素子を大電流領域で使用可能で高出力化にも対応可能な照明装置を提供することにある。   Accordingly, an object of the present invention is to provide a lighting device that has a low thermal resistance and a high heat dissipation effect without using a heat sink or the like, can use a light emitting element in a large current region, and can cope with high output. is there.

本発明は、上記目的を達成するために、高い熱伝導性と透光性を有する基板と、前記基板に実装された発光素子と、前記発光素子を覆い前記発光素子からの出射光を反射して前記基板を透過させる反射部材とを有することを特徴とする照明装置を提供する。   In order to achieve the above object, the present invention provides a substrate having high thermal conductivity and translucency, a light emitting element mounted on the substrate, a light emitting element that covers the light emitting element and reflects light emitted from the light emitting element. And a reflecting member that transmits the substrate.

また、前記基板は、窒化アルミニウム、サファイア、酸化ガリウム、又は、ＳｉＣ基板であってもよく、また、前記発光素子は、ＬＥＤであってもよく、また、前記発光素子は、フリップチップ型のＬＥＤであってもよい。また、前記反射部材は、蛍光体層を有するものであってもよく、シールドが可能な無機材料により形成されていてもよい。また、前記基板は、ＬＥＤ基板と同一であってもよい。また、前記ＬＥＤは、前記反射部材の方向へ前記ＬＥＤからの出射光を反射させる反射層を有するものであってもよい。   Further, the substrate may be an aluminum nitride, sapphire, gallium oxide, or SiC substrate, the light emitting element may be an LED, and the light emitting element is a flip chip type LED. It may be. Further, the reflecting member may have a phosphor layer, and may be formed of an inorganic material that can be shielded. The substrate may be the same as the LED substrate. The LED may have a reflective layer that reflects light emitted from the LED in the direction of the reflective member.

本発明の照明装置によれば、熱抵抗が小さくヒートシンクなどを使用しなくても放熱効果が高く、発光素子を大電流領域で使用可能で高出力化にも対応可能な照明装置を可能とすることができる。   According to the lighting device of the present invention, it is possible to provide a lighting device that has a low heat resistance and a high heat dissipation effect without using a heat sink or the like, can use a light emitting element in a large current region, and can cope with high output. be able to.

（第１の実施の形態）
図１は、本発明の第１の実施の形態に係る照明装置を示す図である。図１（ａ）は、第１の実施の形態に係る照明装置の構成を断面図で示すものであり、（ｂ）は、ＬＥＤで発生する熱の放熱モデルを示す等価熱回路である。 (First embodiment)
FIG. 1 is a diagram showing an illumination apparatus according to the first embodiment of the present invention. FIG. 1A is a cross-sectional view showing the configuration of the lighting apparatus according to the first embodiment, and FIG. 1B is an equivalent thermal circuit showing a heat dissipation model of heat generated by the LED.

第１の実施の形態に係る照明装置１０は、透光性基板１に発光素子としてＬＥＤ２が実装され、ＬＥＤ２を覆うように反射板７が透光性基板１に装着されている。発光素子としては、ＬＥＤの他に、レーザ等の光を出射するものであれば本装置に適用できる。   In the illumination device 10 according to the first embodiment, the LED 2 is mounted as a light emitting element on the translucent substrate 1, and the reflection plate 7 is mounted on the translucent substrate 1 so as to cover the LED 2. As the light emitting element, any device that emits light such as a laser in addition to the LED can be applied to this apparatus.

透光性基板１は、ＬＥＤ２の出射する光の波長が透過するものであれば良いが、窒化アルミニウムを基板状に形成したものが好ましい。その他、サファイア、酸化ガリウム、又は、ＳｉＣ基板であっても同様に使用できる。この窒化アルミニウム基板等は、熱伝導性に優れたセラミックで、高強度、低熱膨張性、高い電気絶縁性、小さい誘電率を有する。   The translucent substrate 1 may be any substrate that transmits the wavelength of light emitted from the LED 2, but is preferably a substrate in which aluminum nitride is formed in a substrate shape. In addition, sapphire, gallium oxide, or a SiC substrate can be used similarly. This aluminum nitride substrate or the like is a ceramic having excellent thermal conductivity, and has high strength, low thermal expansion, high electrical insulation, and a small dielectric constant.

ＬＥＤ２は、クリアペースト６により透光性基板１に空気層を介することなく密着して固着され、透光性基板１に所定のパターンで配線された配線パターン３とＬＥＤ２の２つの電極５を配線４で電気的に接続されている。また、ＬＥＤ２は、透光性基板１上に半導体層を結晶成長させて発光素子として形成することも可能であるので、透光性基板１をＬＥＤ２の基板と同一のものとすることもできる。   The LED 2 is closely adhered and fixed to the translucent substrate 1 without an air layer by the clear paste 6, and the wiring pattern 3 wired to the translucent substrate 1 in a predetermined pattern and the two electrodes 5 of the LED 2 are wired. 4 is electrically connected. Further, since the LED 2 can be formed as a light emitting element by crystal growth of a semiconductor layer on the light transmissive substrate 1, the light transmissive substrate 1 can be the same as the substrate of the LED 2.

反射板７は、ＬＥＤ２からの出射光を照明方向に反射させる反射部材の一実施形態であって、ＬＥＤ２を覆う内部側は、反射しやすいようにＬＥＤ２の出射する光の波長を反射する反射部７ａが形成されているのが好ましい。反射板７の形状は、ＬＥＤ２から出射する光を均等に透光性基板１の方向に反射するものが好ましい。反射部７ａは、反射膜のスパッタ、反射層の塗布、反射シートの貼り付け、メッキ等により形成される。また、反射板７をシールドが可能な無機材料により形成することもでき、不要な電磁波の放射を防止あるいは軽減できる。   The reflecting plate 7 is an embodiment of a reflecting member that reflects the emitted light from the LED 2 in the illumination direction, and the inner side that covers the LED 2 reflects the wavelength of the light emitted from the LED 2 so that it is easily reflected. 7a is preferably formed. The shape of the reflecting plate 7 is preferably one that reflects light emitted from the LEDs 2 uniformly in the direction of the translucent substrate 1. The reflecting portion 7a is formed by sputtering a reflecting film, applying a reflecting layer, attaching a reflecting sheet, plating, or the like. Further, the reflecting plate 7 can be formed of an inorganic material that can be shielded, and unnecessary electromagnetic radiation can be prevented or reduced.

尚、上記の説明、及び、図１では、照明装置１０は、透光性基板１にＬＥＤ２が1個実装され、それに対応して反射板７が装着されたものを示したが、これに限らず、透光性基板１にＬＥＤ２を複数実装し、各ＬＥＤ２を各々反射板７が覆うように装着してもよく、また、複数のＬＥＤ２を一括して反射板７が覆うように装着してもよく、また、これらの組合せによって照明装置１０を構成するようにしてもよい。   In the above description and FIG. 1, the illumination device 10 is shown in which one LED 2 is mounted on the translucent substrate 1 and the reflection plate 7 is mounted correspondingly, but this is not limitative. First, a plurality of LEDs 2 may be mounted on the translucent substrate 1 and each LED 2 may be mounted so that the reflecting plate 7 covers each other. Alternatively, the plurality of LEDs 2 may be mounted together so that the reflecting plate 7 covers them. Moreover, you may make it comprise the illuminating device 10 by these combination.

図２は、第１の実施の形態の変形例を示すもので、複数のＬＥＤ２を透光性基板１に実装し、複数のＬＥＤ２を一括して反射板７で覆うように構成した照明装置を示す図である。   FIG. 2 shows a modification of the first embodiment. An illuminating device configured such that a plurality of LEDs 2 are mounted on a translucent substrate 1 and the plurality of LEDs 2 are collectively covered with a reflecting plate 7. FIG.

（第１の実施の形態による作用効果）
図３は、本発明の第１の実施の形態の作用効果を示す図である。図３において、ＬＥＤ２からの光は下及び斜め下の方向に出射される。出射された光は、反射板７により反射され、透光性基板１を透過して図３の上方向、すなわち、照明対象に向う方向に照射される。ＬＥＤ２からの光は、所定の放射角で出射するので、反射板７の形状を適切に決めることにより、ＬＥＤ２から出射する光を均等に透光性基板１の方向に反射させ、透光性基板１を透過して照明される光をより均一なものにすることができる。 (Operational effects according to the first embodiment)
FIG. 3 is a diagram showing the operational effects of the first embodiment of the present invention. In FIG. 3, the light from the LED 2 is emitted in the downward and obliquely downward directions. The emitted light is reflected by the reflecting plate 7, passes through the translucent substrate 1, and is irradiated in the upward direction of FIG. 3, that is, the direction toward the illumination target. Since the light emitted from the LED 2 is emitted at a predetermined radiation angle, the light emitted from the LED 2 is uniformly reflected in the direction of the translucent substrate 1 by appropriately determining the shape of the reflection plate 7. The light that is transmitted through 1 and illuminated can be made more uniform.

また、透光性基板１に窒化アルミニウムを用いた場合、窒化アルミニウムはアルミニウムに匹敵する高熱伝導率を有するため、熱抵抗が小さく、ＬＥＤ２で発生する熱が窒化アルミニウムの基板を通して拡散されるので、ＬＥＤ２の放熱に有利な効果を有する。   Further, when aluminum nitride is used for the translucent substrate 1, since aluminum nitride has a high thermal conductivity comparable to aluminum, the thermal resistance is small, and the heat generated in the LED 2 is diffused through the aluminum nitride substrate. This has an advantageous effect on the heat dissipation of the LED 2.

また、窒化アルミニウムの放射率は大きいため、ＬＥＤ２を大電流領域で使用しても、効率的に熱を放射することができ、高輝度の照明が可能となる。   Moreover, since the emissivity of aluminum nitride is large, even when the LED 2 is used in a large current region, heat can be radiated efficiently, and illumination with high luminance is possible.

また、窒化アルミニウムの基板は、数十ｋＶ／ｍｍの絶縁耐圧を有すると共に高強度であるため、基板厚を薄くすることが可能となり、かつ、基板上にダイレクトにメタライズが可能となる効果を有する。   In addition, since the aluminum nitride substrate has a dielectric strength of several tens of kV / mm and high strength, the thickness of the substrate can be reduced, and metallization can be performed directly on the substrate. .

（従来例との比較）
図４は、従来の照明装置を示す図である。図４（ａ）は、従来の照明装置の構成を断面図で示すものであり、（ｂ）は、ＬＥＤで発生する熱の放熱モデルを示す等価熱回路である。 (Comparison with conventional example)
FIG. 4 is a diagram illustrating a conventional lighting device. FIG. 4A is a cross-sectional view showing a configuration of a conventional lighting device, and FIG. 4B is an equivalent thermal circuit showing a heat dissipation model of heat generated in the LED.

図４（ａ）において、従来の照明装置は、エポキシ樹脂で形成された絶縁基板１０１ａとアルミ基板１０１ｂとが貼り合わされた実装基板上に、ＬＥＤ１０２がクリアペースト１０６により絶縁基板１０１ａに空気層を介することなく密着して固着され、絶縁基板１０１ａに所定のパターンで配線された配線パターン１０３とＬＥＤ１０２の２つの電極１０５を配線１０４で電気的に接続されている。   4A, in the conventional lighting device, an LED 102 passes an air layer on an insulating substrate 101a with a clear paste 106 on a mounting substrate in which an insulating substrate 101a formed of an epoxy resin and an aluminum substrate 101b are bonded together. The wiring pattern 103 and the LED 102 are electrically connected to each other by the wiring 104, which are closely adhered to each other and are wired in a predetermined pattern on the insulating substrate 101a.

ここで、図１（ｂ）に示した第１の実施の形態に係る照明装置のＬＥＤで発生する熱の放熱モデルと、図４（ｂ）に示した従来の照明装置のＬＥＤで発生する熱の放熱モデルとを比較する。各図の点線で囲まれた部分の熱抵抗を比較する。実装面１０ｍｍ×１０ｍｍ、ＬＥＤと基板の接合部でのジャンクション温度１００℃、周囲温度３０℃と仮定する。   Here, a heat dissipation model of heat generated in the LED of the lighting device according to the first embodiment shown in FIG. 1B and heat generated in the LED of the conventional lighting device shown in FIG. 4B. Compare with the heat dissipation model. The thermal resistance of the part surrounded by the dotted line in each figure is compared. Assume that the mounting surface is 10 mm × 10 mm, the junction temperature at the junction between the LED and the substrate is 100 ° C., and the ambient temperature is 30 ° C.

従来の照明装置における実装では、エポキシ樹脂で形成された絶縁基板１０１ａからアルミ基板１０１ｂまでの伝導による熱抵抗は、Ｒ１０１ａ＋Ｒ１０１ｂ＝２．８℃／Ｗ、放射、自然対流による熱抵抗は、Ｒ１０８とＲ１０９を合成して、７７４．４６℃／Ｗである。よって、卜一タルの熱抵抗７７７．２６℃／Ｗとなる。 In the mounting in the conventional lighting device, the thermal resistance due to conduction from the insulating substrate 101a formed of epoxy resin to the aluminum substrate 101b is R 101a + R 101b = 2.8 ° C./W, and the thermal resistance due to radiation and natural convection is R 108 and R 109 are synthesized and the temperature is 774.46 ° C./W. Therefore, the thermal resistance of the total is 777.26 ° C./W.

一方、窒化アルミニウム基板の場合では、伝導による熱抵抗は、Ｒ１＝０．１５℃／Ｗ、放射、自然対流による熱抵抗は、Ｒ８とＲ９を合成して３３２．７９℃／Ｗである。よって、トータルの熱抵抗は３３２．９４℃／Ｗとなる。 On the other hand, in the case of an aluminum nitride substrate, the thermal resistance by conduction is R 1 = 0.15 ° C./W, and the thermal resistance by radiation and natural convection is 332.79 ° C./W by combining R 8 and R 9. is there. Therefore, the total thermal resistance is 332.94 ° C./W.

従って、窒化アルミニウム基板の伝導による熱抵抗は、従来の実装基板における伝導による熱抵抗のおよそ１／１５０に減少する。さらに窒化アルミニウム基板は高放射性を有することから、自然対流と放射を含めたトータルの熱抵抗が従来実装に比べて、５７％減少する。   Therefore, the thermal resistance due to conduction of the aluminum nitride substrate is reduced to about 1/150 of the thermal resistance due to conduction in the conventional mounting substrate. Furthermore, since the aluminum nitride substrate has high radiation, the total thermal resistance including natural convection and radiation is reduced by 57% compared to the conventional mounting.

（第１の実施の形態の効果）
第１の実施の形態によれば、以下の効果を有する。
１ 窒化アルミニウム基板は、高熱伝導率（アルミニウムに匹敵）を有するため、熱抵抗が小さい。
２ 数十ｋＶ／ｍｍの絶縁耐圧を有し、かつ、高強度であるため、基板厚を薄くすることが可能、かつ、基板上にダイレクトにメタライズが可能となる。
３ 高放射率を有するため、効率的に熱を放射することが可能となり、大電流領域で使用できる。
４ 透光性基板に反射板を付けることによって、基板の裏面方向に効率よく光を放射することが可能となる。 (Effects of the first embodiment)
The first embodiment has the following effects.
1 An aluminum nitride substrate has a high thermal conductivity (comparable to aluminum) and thus has a low thermal resistance.
2 Since it has a dielectric strength of several tens of kV / mm and high strength, the thickness of the substrate can be reduced, and metallization can be performed directly on the substrate.
3 Since it has a high emissivity, it is possible to radiate heat efficiently and it can be used in a large current region.
4. By attaching a reflecting plate to the translucent substrate, light can be efficiently emitted in the direction of the back surface of the substrate.

（第２の実施の形態）
図５は、本発明の第２の実施の形態に係る照明装置を示す図である。窒化アルミニウムを基板状に形成した透光性基板１に、ＬＥＤ２がクリアペースト６により空気層を介することなく密着して固着され、透光性基板１上に所定のパターンで配線された配線パターン３とＬＥＤ２の２つの電極５をはんだペースト８によりはんだ付け処理が施されて電気的に接続されている。すなわち、上記のＬＥＤ２は、フリップチップ型の発光素子として構成され、透光性基板１に実装されている。 (Second Embodiment)
FIG. 5 is a diagram showing an illumination apparatus according to the second embodiment of the present invention. A wiring pattern 3 in which an LED 2 is adhered and fixed to a light-transmitting substrate 1 formed of aluminum nitride in a substrate shape without using an air layer with a clear paste 6 and wired on the light-transmitting substrate 1 in a predetermined pattern. The two electrodes 5 of the LED 2 are soldered with a solder paste 8 and are electrically connected. That is, the LED 2 is configured as a flip-chip type light emitting element and is mounted on the translucent substrate 1.

また、図５では、照明装置１０は、透光性基板１にＬＥＤ２が1個実装され、それに対応して反射板７が装着されたものを示したが、これに限らず、透光性基板１にＬＥＤ２を複数実装し、各ＬＥＤ２を各々反射板７が覆うように装着してもよく、また、複数のＬＥＤ２を一括して反射板７が覆うように装着してもよく、また、これらの組合せによって照明装置１０を構成するようにしてもよい。   Moreover, in FIG. 5, although the illuminating device 10 showed what the LED2 was mounted in the translucent board | substrate 1, and the reflecting plate 7 was mounted | worn correspondingly, it is not restricted to this, A translucent board | substrate is shown. A plurality of LEDs 2 may be mounted on 1 and each LED 2 may be mounted so that the reflecting plate 7 covers each other, or a plurality of LEDs 2 may be mounted together so that the reflecting plate 7 covers them. You may make it comprise the illuminating device 10 by the combination of these.

（第２の実施の形態の効果）
第２の実施の形態によれば、第１の実施の形態の効果に加えて、次のような効果を有する。 (Effect of the second embodiment)
According to the second embodiment, in addition to the effects of the first embodiment, the following effects are obtained.

フリップチップ型の発光素子を、透光性基板１に実装することで、ＬＥＤ２で発生した熱は、主にはんだペースト８を介して透光性基板１へ伝導して外部へ放熱される。配線４に比べて断面積の大きなはんだペースト８を熱が伝導するので、効率的に熱を逃がすことができ、放熱効果が大きい。これにより、さらに大電流領域で使用することができる。   By mounting the flip-chip type light emitting element on the translucent substrate 1, the heat generated in the LED 2 is mainly conducted to the translucent substrate 1 through the solder paste 8 and radiated to the outside. Since heat is conducted through the solder paste 8 having a larger cross-sectional area than the wiring 4, heat can be efficiently released and the heat dissipation effect is great. As a result, it can be used in a larger current region.

また、配線４を使用しないので、実装工数の削減と、照明装置としての信頼性が向上する。   Further, since the wiring 4 is not used, the number of mounting steps can be reduced and the reliability as the lighting device can be improved.

（第３の実施の形態）
図６は、本発明の第３の実施の形態に係る照明装置を示す図である。この実施の形態は、第１の実施の形態に係る照明装置において、ＬＥＤ２と透光性基板１の間に反射層２１を設け、また、反射板７の内面に蛍光体層２２を設けたものである。この構成によれば、第１の実施の形態の効果に加え、反射層２１により放射率がさらに向上すると共に、蛍光体層２２により可視光としての放射量がさらに向上するという効果を有する。 (Third embodiment)
FIG. 6 is a diagram showing an illumination apparatus according to the third embodiment of the present invention. In this embodiment, in the lighting device according to the first embodiment, a reflective layer 21 is provided between the LED 2 and the translucent substrate 1, and a phosphor layer 22 is provided on the inner surface of the reflector 7. It is. According to this configuration, in addition to the effect of the first embodiment, the emissivity is further improved by the reflective layer 21 and the radiation amount as visible light is further improved by the phosphor layer 22.

（第４の実施の形態）
図７は、本発明の第４の実施の形態に係る照明装置を示す図である。この実施の形態は、第２の実施の形態に係る照明装置において、反射板７の内面に蛍光体層２３を設けたものである。この構成によれば、第２の実施の形態の効果に加え、蛍光体層２３により可視光としての放射量がさらに向上するという効果を有する。また、第３の実施の形態と同様に、ＬＥＤ２の上層部に反射層を設けることもでき、これにより、放射率をさらに向上させることができる。 (Fourth embodiment)
FIG. 7 is a diagram showing an illumination apparatus according to the fourth embodiment of the present invention. In this embodiment, the phosphor layer 23 is provided on the inner surface of the reflecting plate 7 in the illumination device according to the second embodiment. According to this configuration, in addition to the effect of the second embodiment, the phosphor layer 23 has an effect that the amount of radiation as visible light is further improved. Further, similarly to the third embodiment, a reflective layer can be provided on the upper layer portion of the LED 2, thereby further improving the emissivity.

（第５の実施の形態）
図８は、本発明の第５の実施の形態に係る照明装置を示す図である。この実施の形態は、第１〜４の実施の形態に係る照明装置において、反射板７の形状を放物線形状としたものである。この構成によれば、ＬＥＤ２と反射板７の位置関係により、照明方向を平行、発散、あるいは集束光をすることができ、方向性を備えた照明装置を可能とすることができる。また、ＬＥＤ２と透光性基板１の間に反射層２１を設け、また、反射板７の内面に蛍光体層を設けることもできる。この構成によれば、反射層２１により放射率がさらに向上すると共に、蛍光体層により可視光としての放射量がさらに向上するという効果を有する。 (Fifth embodiment)
FIG. 8 is a diagram showing an illumination apparatus according to the fifth embodiment of the present invention. In this embodiment, in the lighting device according to the first to fourth embodiments, the shape of the reflecting plate 7 is a parabolic shape. According to this configuration, depending on the positional relationship between the LED 2 and the reflecting plate 7, the illumination direction can be made parallel, divergent, or focused light, and a lighting device having directionality can be realized. Further, a reflective layer 21 can be provided between the LED 2 and the translucent substrate 1, and a phosphor layer can be provided on the inner surface of the reflective plate 7. According to this configuration, there is an effect that the emissivity is further improved by the reflective layer 21 and the amount of radiation as visible light is further improved by the phosphor layer.

本発明の第１の実施の形態に係る照明装置を示す図である。It is a figure which shows the illuminating device which concerns on the 1st Embodiment of this invention. 第１の実施の形態の変形例を示すもので、複数のＬＥＤ２を透光性基板１に実装し、複数のＬＥＤ２を一括して反射板７を覆うように構成した照明装置を示す図である。The modification of 1st Embodiment is shown, It is a figure which shows the illuminating device comprised so that several LED2 might be mounted in the translucent board | substrate 1, and several LED2 might cover the reflecting plate 7 collectively. . 本発明の第１の実施の形態に係る照明装置の照明作用を示す図である。It is a figure which shows the illumination effect | action of the illuminating device which concerns on the 1st Embodiment of this invention. 従来の照明装置を示す図である。It is a figure which shows the conventional illuminating device. 本発明の第２の実施の形態に係る照明装置を示す図である。It is a figure which shows the illuminating device which concerns on the 2nd Embodiment of this invention. 本発明の第３の実施の形態に係る照明装置を示す図である。It is a figure which shows the illuminating device which concerns on the 3rd Embodiment of this invention. 本発明の第４の実施の形態に係る照明装置を示す図である。It is a figure which shows the illuminating device which concerns on the 4th Embodiment of this invention. 本発明の第５の実施の形態に係る照明装置を示す図である。It is a figure which shows the illuminating device which concerns on the 5th Embodiment of this invention.

符号の説明Explanation of symbols

１ 透光性基板
２ ＬＥＤ
３ 配線パターン
４ 配線
５ 電極
６ クリアペースト
７ 反射板
８ はんだペースト
１０ 照明装置
２１ 反射層
２２，２３ 蛍光体層 1 Translucent substrate 2 LED
3 Wiring Pattern 4 Wiring 5 Electrode 6 Clear Paste 7 Reflecting Plate 8 Solder Paste 10 Lighting Device 21 Reflecting Layers 22 and 23 Phosphor Layer

Claims (8)

高い熱伝導性と透光性を有する基板と、前記基板に実装された発光素子と、前記発光素子を覆い前記発光素子からの出射光を反射して前記基板を透過させる反射部材とを有することを特徴とする照明装置。   A substrate having high thermal conductivity and translucency; a light emitting element mounted on the substrate; and a reflecting member that covers the light emitting element and reflects light emitted from the light emitting element and transmits the light through the substrate. A lighting device characterized by the above. 前記基板は、窒化アルミニウム、サファイア、酸化ガリウム、又は、ＳｉＣ基板であることを特徴とする請求項１に記載の照明装置。   The lighting device according to claim 1, wherein the substrate is an aluminum nitride, sapphire, gallium oxide, or SiC substrate. 前記発光素子は、ＬＥＤ（Light Emitting Diode）であることを特徴とする請求項１に記載の照明装置。   The lighting device according to claim 1, wherein the light emitting element is an LED (Light Emitting Diode). 前記発光素子は、フリップチップ型のＬＥＤであることを特徴とする請求項１に記載の照明装置。   The lighting device according to claim 1, wherein the light emitting element is a flip chip type LED. 前記反射部材は、蛍光体層を有することを特徴とする請求項１に記載の照明装置。   The lighting device according to claim 1, wherein the reflection member includes a phosphor layer. 前記反射部材は、シールドが可能な無機材料により形成されていることを特徴とする請求項１に記載の照明装置。   The lighting device according to claim 1, wherein the reflecting member is made of an inorganic material that can be shielded. 前記基板は、ＬＥＤ基板と同一であることを特徴とする請求項３又は４に記載の照明装置。   The lighting device according to claim 3, wherein the substrate is the same as the LED substrate. 前記ＬＥＤは、前記反射部材の方向へ前記ＬＥＤからの出射光を反射させる反射層を有することを特徴とする請求項３又は４に記載の照明装置。   The lighting device according to claim 3, wherein the LED includes a reflective layer that reflects light emitted from the LED toward the reflective member.
JP2005334271A 2005-11-18 2005-11-18 Illuminator Pending JP2007142173A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005334271A JP2007142173A (en) 2005-11-18 2005-11-18 Illuminator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005334271A JP2007142173A (en) 2005-11-18 2005-11-18 Illuminator

Publications (1)

Publication Number Publication Date
JP2007142173A true JP2007142173A (en) 2007-06-07

Family

ID=38204682

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2005334271A Pending JP2007142173A (en) 2005-11-18 2005-11-18 Illuminator

Country Status (1)

Country Link
JP (1) JP2007142173A (en)

Cited By (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010021268A (en) * 2008-07-09 2010-01-28 Ushio Inc Light emitting device
JP2010027645A (en) * 2008-07-15 2010-02-04 Ushio Inc Light emitting device and fabrication process therefor
JP2010170868A (en) * 2009-01-23 2010-08-05 Rohm Co Ltd Illuminating device
JP2011230751A (en) * 2010-04-09 2011-11-17 Lecip Holdings Corp Led lighting fixture
JP2012048969A (en) * 2010-08-26 2012-03-08 Panasonic Electric Works Co Ltd Led illumination unit
JP2012119193A (en) * 2010-12-01 2012-06-21 Sharp Corp Light-emitting device, vehicular headlamp, lighting device, and vehicle
JP2012523662A (en) * 2009-04-09 2012-10-04 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Lamps for laser applications
CN102881810A (en) * 2011-07-13 2013-01-16 李学旻 Light emitting source device
WO2013021518A1 (en) * 2011-08-08 2013-02-14 パナソニック株式会社 Light emitting device
CN102959708A (en) * 2010-06-29 2013-03-06 柯立芝照明有限公司 Electronic devices with yielding substrates
WO2013118662A1 (en) * 2012-02-07 2013-08-15 シチズンホールディングス株式会社 Light-emitting apparatus
JP2013178740A (en) * 2012-02-07 2013-09-09 Citizen Holdings Co Ltd Light emitting device
US8733993B2 (en) 2010-10-29 2014-05-27 Sharp Kabushiki Kaisha Light emitting device, illumination device, vehicle headlamp, and vehicle
US8733957B2 (en) 2010-10-29 2014-05-27 Sharp Kabushiki Kaisha Light emitting device, vehicle headlamp, and illumination device
JP2014132537A (en) * 2013-01-07 2014-07-17 Maruwa Co Ltd LED module
US8814405B2 (en) 2010-10-29 2014-08-26 Sharp Kabushiki Kaisha Light emitting device, vehicle headlamp, and illumination device
US8974089B2 (en) 2011-03-03 2015-03-10 Sharp Kabushiki Kaisha Light emitting device, illumination device, and vehicle headlamp
US9107272B2 (en) 2010-01-04 2015-08-11 Cooledge Lighting Inc. Failure mitigation in arrays of light-emitting devices
US9108568B2 (en) 2011-06-29 2015-08-18 Sharp Kabushiki Kaisha Light-projecting device, and vehicle headlamp including light-projecting device
US9179510B2 (en) 2009-06-27 2015-11-03 Cooledge Lighting Inc. High efficiency LEDs and LED lamps
US9214615B2 (en) 2012-06-07 2015-12-15 Cooledge Lighting Inc. Methods of fabricating wafer-level flip chip device packages
JP2016525798A (en) * 2013-07-10 2016-08-25 ゴールデンアイ，インコーポレイテッド Self-cooling light source
WO2018150686A1 (en) * 2017-02-17 2018-08-23 日本特殊陶業株式会社 Wavelength conversion member

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000277812A (en) * 1999-03-24 2000-10-06 Sanyo Electric Co Ltd Line light source device and its manufacture
JP2002185045A (en) * 2000-12-12 2002-06-28 Matsushita Electric Ind Co Ltd Led, display using the same, illuminator, liquid crystal backlight device and light source device for projectors
JP2002280614A (en) * 2001-03-14 2002-09-27 Citizen Electronics Co Ltd Light emitting diode
JP2002289925A (en) * 2001-03-23 2002-10-04 Citizen Electronics Co Ltd Light-emitting diode

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000277812A (en) * 1999-03-24 2000-10-06 Sanyo Electric Co Ltd Line light source device and its manufacture
JP2002185045A (en) * 2000-12-12 2002-06-28 Matsushita Electric Ind Co Ltd Led, display using the same, illuminator, liquid crystal backlight device and light source device for projectors
JP2002280614A (en) * 2001-03-14 2002-09-27 Citizen Electronics Co Ltd Light emitting diode
JP2002289925A (en) * 2001-03-23 2002-10-04 Citizen Electronics Co Ltd Light-emitting diode

Cited By (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010021268A (en) * 2008-07-09 2010-01-28 Ushio Inc Light emitting device
JP2010027645A (en) * 2008-07-15 2010-02-04 Ushio Inc Light emitting device and fabrication process therefor
JP2010170868A (en) * 2009-01-23 2010-08-05 Rohm Co Ltd Illuminating device
JP2012523662A (en) * 2009-04-09 2012-10-04 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Lamps for laser applications
US9179510B2 (en) 2009-06-27 2015-11-03 Cooledge Lighting Inc. High efficiency LEDs and LED lamps
US9107272B2 (en) 2010-01-04 2015-08-11 Cooledge Lighting Inc. Failure mitigation in arrays of light-emitting devices
JP2011230751A (en) * 2010-04-09 2011-11-17 Lecip Holdings Corp Led lighting fixture
US9252373B2 (en) 2010-06-29 2016-02-02 Cooledge Lighting, Inc. Electronic devices with yielding substrates
US9054290B2 (en) 2010-06-29 2015-06-09 Cooledge Lighting Inc. Electronic devices with yielding substrates
CN102959708A (en) * 2010-06-29 2013-03-06 柯立芝照明有限公司 Electronic devices with yielding substrates
JP2013531378A (en) * 2010-06-29 2013-08-01 クーレッジ ライティング インコーポレイテッド Electronic device with flexible substrate
US8907370B2 (en) 2010-06-29 2014-12-09 Cooledge Lighting Inc. Electronic devices with yielding substrates
US9426860B2 (en) 2010-06-29 2016-08-23 Cooledge Lighting, Inc. Electronic devices with yielding substrates
KR101372084B1 (en) * 2010-06-29 2014-03-07 쿨레지 라이팅 인크. Electronic devices with yielding substrates
US8680567B2 (en) 2010-06-29 2014-03-25 Cooledge Lighting Inc. Electronic devices with yielding substrates
JP2012048969A (en) * 2010-08-26 2012-03-08 Panasonic Electric Works Co Ltd Led illumination unit
US8733957B2 (en) 2010-10-29 2014-05-27 Sharp Kabushiki Kaisha Light emitting device, vehicle headlamp, and illumination device
US8733993B2 (en) 2010-10-29 2014-05-27 Sharp Kabushiki Kaisha Light emitting device, illumination device, vehicle headlamp, and vehicle
US8814405B2 (en) 2010-10-29 2014-08-26 Sharp Kabushiki Kaisha Light emitting device, vehicle headlamp, and illumination device
US9625121B2 (en) 2010-12-01 2017-04-18 Sharp Kabushiki Kaisha Light emitting device, vehicle headlamp, illumination device, and vehicle
JP2012119193A (en) * 2010-12-01 2012-06-21 Sharp Corp Light-emitting device, vehicular headlamp, lighting device, and vehicle
US9366399B2 (en) 2011-03-03 2016-06-14 Sharp Kabushiki Kaisha Light emitting device, illumination device, and vehicle headlamp
US8974089B2 (en) 2011-03-03 2015-03-10 Sharp Kabushiki Kaisha Light emitting device, illumination device, and vehicle headlamp
US9108568B2 (en) 2011-06-29 2015-08-18 Sharp Kabushiki Kaisha Light-projecting device, and vehicle headlamp including light-projecting device
US9328890B2 (en) 2011-06-29 2016-05-03 Sharp Kabushiki Kaisha Light projecting device and vehicular headlamp
CN102881810A (en) * 2011-07-13 2013-01-16 李学旻 Light emitting source device
WO2013021518A1 (en) * 2011-08-08 2013-02-14 パナソニック株式会社 Light emitting device
WO2013118662A1 (en) * 2012-02-07 2013-08-15 シチズンホールディングス株式会社 Light-emitting apparatus
JP2013178740A (en) * 2012-02-07 2013-09-09 Citizen Holdings Co Ltd Light emitting device
US9231178B2 (en) 2012-06-07 2016-01-05 Cooledge Lighting, Inc. Wafer-level flip chip device packages and related methods
US9214615B2 (en) 2012-06-07 2015-12-15 Cooledge Lighting Inc. Methods of fabricating wafer-level flip chip device packages
JP2014132537A (en) * 2013-01-07 2014-07-17 Maruwa Co Ltd LED module
JP2016525798A (en) * 2013-07-10 2016-08-25 ゴールデンアイ，インコーポレイテッド Self-cooling light source
EP3019790B1 (en) * 2013-07-10 2020-02-12 Goldeneye, Inc Self cooling light source
WO2018150686A1 (en) * 2017-02-17 2018-08-23 日本特殊陶業株式会社 Wavelength conversion member
KR20190113750A (en) * 2017-02-17 2019-10-08 니뽄 도쿠슈 도교 가부시키가이샤 Wavelength conversion member
KR102268693B1 (en) 2017-02-17 2021-06-23 니뽄 도쿠슈 도교 가부시키가이샤 wavelength conversion element
US11060020B2 (en) 2017-02-17 2021-07-13 Ngk Spark Plug Co., Ltd. Wavelength conversion member

Similar Documents

Publication Publication Date Title
JP2007142173A (en) Illuminator
JP4880358B2 (en) Light source substrate and illumination device using the same
JP4706085B2 (en) Semiconductor light emitting module and manufacturing method thereof
US7794121B2 (en) Two-dimensional luminaire
JP5029822B2 (en) Light source and lighting device
JP4808550B2 (en) Light emitting diode light source device, lighting device, display device, and traffic signal device
JP4802304B2 (en) Semiconductor light emitting module and manufacturing method thereof
WO2010117027A1 (en) Light emitting module and lighting apparatus
JP2008293966A (en) Light-emitting diode lamp
JP2010003674A (en) Light source unit, and lighting apparatus
TW201424064A (en) Light emitting device and illuminating device
TWI525789B (en) Light-emitting diode
JPWO2006046655A1 (en) Light-emitting element mounting substrate, light-emitting element storage package, light-emitting device, and lighting device
JP4683013B2 (en) Light emitting device
JP2006210627A (en) Light emitting element housing package, light emitting unit, and lighting device
JP2007200727A (en) Lighting device
JP2008085302A (en) Illumination apparatus
WO2011024861A1 (en) Light-emitting device and illuminating device
CN203300702U (en) Light-emitting module and lighting equipment
JP2006100441A (en) Light emitting element housing package, light emitting device, and illumination device
JP2006147214A (en) Lighting system
KR100645657B1 (en) Flip-chip printed circuit board and white light-emitting diode module having the flip-chip printed circuit board
JP2007035882A (en) Led illuminator
JP2013030598A (en) Heat generation device
JP2010287749A (en) Light emitting body and lighting instrument

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20081112

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20111129

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20120327