JP4880358B2 - Light source substrate and illumination device using the same - Google Patents
Light source substrate and illumination device using the same Download PDFInfo
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- JP4880358B2 JP4880358B2 JP2006142552A JP2006142552A JP4880358B2 JP 4880358 B2 JP4880358 B2 JP 4880358B2 JP 2006142552 A JP2006142552 A JP 2006142552A JP 2006142552 A JP2006142552 A JP 2006142552A JP 4880358 B2 JP4880358 B2 JP 4880358B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/17—Structure, shape, material or disposition of the bump connectors after the connecting process of a plurality of bump connectors
Description
本発明は、光源用基板及びこれを用いた照明装置に関し、特に、光源用素子が発生する熱の放熱性に優れた光源用基板及びこれを用いた照明装置に関する。 The present invention relates to a light source substrate and an illuminating device using the same, and more particularly to a light source substrate excellent in heat dissipation of heat generated by a light source element and an illuminating device using the same.
環境問題、特にエネルギー削減において低消費電力であるＬＥＤは、今後照明用としての需要が見込まれる。照明用のためには従来の数十ミリアンペアでは、蛍光灯と比較して明るさが不十分である。そのため、十分な明るさを確保するには、数百ミリアンペアの領域での使用が必須となる。しかし、数百ミリアンペアを流すと、熱の問題が発生するため、パッケージングにおいて、効率よく熱を逃がす必要がある。 LEDs with low power consumption for environmental problems, especially energy reduction, are expected to be used for lighting in the future. For illumination, the conventional tens of milliamps are insufficient in brightness as compared with fluorescent lamps. Therefore, in order to ensure sufficient brightness, use in the region of several hundred milliamps is essential. However, when a few hundred milliamperes are passed, a heat problem occurs. Therefore, it is necessary to efficiently release heat in packaging.
そこで、金属ベ−スと、片面に絶縁体を介して設けられた電極とを具備し、絶縁体が第１絶縁層と第２絶縁層とからなり、第１絶縁層がガラス繊維不織布に酸化アルミニウム等からなる無機充填剤混合樹脂を塗布したもので、第２絶縁層が芳香族ポリアミド繊維不織布もしくはガラス繊維混抄芳香族ポリアミド繊維不織布に熱硬化性樹脂を塗布含浸した回路用金属基板が、放熱性と耐絶縁性に優れた回路用金属基板として提案されている(例えば、特許文献１参照)。 Therefore, a metal base and an electrode provided on one side via an insulator are provided, the insulator is composed of a first insulating layer and a second insulating layer, and the first insulating layer is oxidized into a glass fiber nonwoven fabric. A metal substrate for circuits in which an inorganic filler mixed resin made of aluminum or the like is applied and the second insulating layer is coated with an aromatic polyamide fiber non-woven fabric or glass fiber mixed aromatic polyamide fiber non-woven fabric is impregnated with a thermosetting resin. It has been proposed as a metal substrate for circuits having excellent properties and insulation resistance (see, for example, Patent Document 1).
また、金属基板として、金属板に絶縁層及び配線性金属箔を順に積層してなる積層物の配線性金属箔をエッチングして配線回路を形成した金属ベース回路基板の裏面に、放熱フィンを半田付けするためのニッケルめっきまたは金めっきを施した金属ベース回路基板が提案されている(例えば、特許文献２参照)。
しかし、従来の多くのＬＥＤパッケージングは配線パターンが形成されたエポキシ樹脂基板にＬＥＤをマウントし、エポキシ樹脂基板をヒートシンクに実装する方法であり、素子から熱抵抗の大きいエポキシ樹脂を介してヒートシンクに接続している。総計としての熱抵抗は、各部材の熱抵抗の合計の為、他の部材の熱抵抗をいくら下げてもエポキシ樹脂の為に熱抵抗の総計は下がらないという欠点を有している。このため、発光素子を大電流領域で使用できず、高出力化にも限界が生じていた。 However, many conventional LED packaging is a method in which an LED is mounted on an epoxy resin substrate on which a wiring pattern is formed, and the epoxy resin substrate is mounted on a heat sink. From the element to the heat sink via an epoxy resin having a large thermal resistance. Connected. The total thermal resistance has the disadvantage that the total thermal resistance of each member does not decrease because of the epoxy resin, no matter how much the thermal resistance of other members is lowered. For this reason, the light-emitting element cannot be used in a large current region, and there has been a limit to increasing the output.
また、例えば、特許文献１に開示された回路用金属基板では、実装面と反対側には放熱向上のための対策は施されてなく、放熱効果は十分とは言えず、また、特許文献２に開示された金属ベース回路基板では、基板下に放熱フィンを装着して熱を逃がしたり、強制冷風の方法を用いていたが、いずれの方法においても、厚み方向においてスペースが必要となるため、照明器具としても大きくなるという問題がある。 In addition, for example, in the circuit metal substrate disclosed in Patent Document 1, no measures for improving heat dissipation are taken on the side opposite to the mounting surface, and the heat dissipation effect cannot be said to be sufficient. In the metal base circuit board disclosed in the above, a heat radiating fin is attached under the board to release heat, or a forced cold air method is used, but in either method, a space is required in the thickness direction. There is a problem that it becomes large as a lighting fixture.
また、実装面から効率よくＬＥＤからの光を照射させることが必要であるが、従来の金属基板を用いた回路基板では、主に放熱性を考慮し、他の機能、例えば、光源用基板として要求される高い反射率等が考慮されていなかった。 In addition, it is necessary to efficiently irradiate light from the LED from the mounting surface. However, in a circuit board using a conventional metal substrate, mainly considering heat dissipation, other functions, for example, as a light source substrate The required high reflectance was not considered.
従って、本発明の目的は、熱抵抗が小さくヒートシンクなどを使用しなくても放熱効果が高く、発光素子を大電流領域で使用可能で高出力化にも対応可能な光源用基板及びこれを用いた照明装置を提供することにある。 Accordingly, an object of the present invention is to provide a light source substrate having a low thermal resistance and a high heat dissipation effect without using a heat sink, and capable of using a light emitting element in a large current region and capable of responding to high output. It is to provide a lighting device.
本発明は、上記目的を達成するために、光源用素子が実装される光源用基板であって、高い熱伝導性を有するベース基板と、前記ベース基板の前記光源用素子が実装される実装面側の面に形成された高い熱伝導性、及び熱放射性を有する絶縁層と、前記絶縁層を介して前記実装面側に形成された配線パターンと、前記ベース基板の前記実装面側と反対側の面に形成された高い熱放射性を有する放熱層とを有し、前記絶縁層の厚さは、前記放熱層の厚さよりも厚く設定されていることを特徴とする光源用基板を提供する。 In order to achieve the above object, the present invention provides a light source substrate on which a light source element is mounted, a base substrate having high thermal conductivity, and a mounting surface on which the light source element of the base substrate is mounted. high thermal conductivity is formed on the surface on the side, and an insulating layer having a thermal radiation property, the insulating layer and a wiring pattern formed on the mounting surface through a said mounting surface of said base substrate opposite It has a heat radiation layer having a high thermal radiation property formed on the surface of, the thickness of the insulating layer to provide a light source substrate, characterized in that is set larger than the thickness of the heat dissipation layer.
また、前記ベース基板は、金属基板であってもよく、アルミニウム、アルミニウム合金、銅、又は銅系合金であってもよい。また、前記絶縁層は、セラミック、アルミナ、窒化アルミニウム、及び、アルミアルマイトのいずれかにより形成されていてもよく、プラズマ溶射、陽極酸化、スピンコート、ＣＶＤ、ＰＶＤ、及び、蒸着のいずれかの方法により形成されているものであってもよい。また、前記絶縁層は、可視光領域では高い反射率を示す材料により形成されるものであってもよく、また、前記光源用素子の反射板として利用できる白色の絶縁材料により形成されるものであってもよく、具体的には、溶射アルミナ又は溶射Ｙ２Ｏ３であってもよい。また、前記放熱層は、表面が粗面又は凹凸面により形成されているものでもよく、アルミアルマイト、アルミナ、及び、窒化アルミニウムのいずれかにより形成されていてもよく、プラズマ溶射、陽極酸化、スピンコート、ＣＶＤ、ＰＶＤ、及び、蒸着のいずれかの方法により形成されているものであってもよい。 The base substrate may be a metal substrate, and may be aluminum, an aluminum alloy, copper, or a copper alloy. The insulating layer may be formed of any one of ceramic, alumina, aluminum nitride, and aluminum alumite, and any one of plasma spraying, anodizing, spin coating, CVD, PVD, and vapor deposition It may be formed by. The insulating layer may be formed of a material exhibiting a high reflectance in the visible light region, or may be formed of a white insulating material that can be used as a reflector of the light source element. Specifically, it may be sprayed alumina or sprayed Y 2 O 3 . Further, the heat dissipation layer may be formed of a rough or uneven surface, or may be formed of any one of aluminum alumite, alumina, and aluminum nitride, plasma spraying, anodic oxidation, spin It may be formed by any method of coating, CVD, PVD, and vapor deposition.
また、本発明は、上記目的を達成するために、光源用基板に光源用素子が実装された照明装置であって、前記光源用基板は、上記いずれかに記載の光源用基板であることを特徴とする照明装置を提供する。 In order to achieve the above object, the present invention provides a lighting device in which a light source element is mounted on a light source substrate, wherein the light source substrate is any of the light source substrates described above. A lighting device is provided.
本発明の光源用基板及びこれを用いた照明装置によれば、熱抵抗が小さくヒートシンクなどを使用しなくても放熱効果が高く、発光素子を大電流領域で使用可能で高出力化にも対応可能な光源用基板及びこれを用いた照明装置を可能とすることができる。 According to the light source substrate of the present invention and the illumination device using the same, the heat resistance is small and the heat radiation effect is high even without using a heat sink, and the light emitting element can be used in a large current region, and also supports high output. A possible light source substrate and a lighting device using the same can be realized.
（第１の実施の形態）
図１は、本発明の第１の実施の形態に係る光源用基板及び光源用基板に光源用素子が実装された照明装置を示す図である。図１（ａ）は、第１の実施の形態に係る光源用基板及び照明装置の構成を断面図で示すものであり、（ｂ）は、ＬＥＤで発生する熱の放熱モデルを示す等価熱回路を示す図である。
(First embodiment)
FIG. 1 is a diagram showing a light source substrate and a lighting device in which a light source element is mounted on the light source substrate according to the first embodiment of the present invention. FIG. 1A is a cross-sectional view showing the configuration of the light source substrate and the lighting device according to the first embodiment, and FIG. 1B is an equivalent thermal circuit showing a heat dissipation model of heat generated by the LED. FIG.
第１の実施の形態に係る光源用基板１１は、高い熱伝導性を有するベース基板１と、光源用素子が実装される実装面側に形成された第１の絶縁層２と、実装面と反対側に形成された放熱層５と、第１の絶縁層２を介して実装面上に形成された配線パターン６とからなる。ここで、光源用素子とは、ＬＥＤ，ＬＤ等の光源となる発光素子と、この発光素子を駆動あるいは制御するために必要となる回路素子あるいは周辺素子を含む。 A light source substrate 11 according to the first embodiment includes a base substrate 1 having high thermal conductivity, a first insulating layer 2 formed on a mounting surface side on which a light source element is mounted, a mounting surface, The heat dissipation layer 5 is formed on the opposite side, and the wiring pattern 6 is formed on the mounting surface with the first insulating layer 2 interposed therebetween. Here, the light source element includes a light emitting element serving as a light source such as an LED or an LD, and a circuit element or a peripheral element necessary for driving or controlling the light emitting element.
また、照明装置１２は、ベース基板１上にはんだバンプ７を介して金属の配線パターン６と電極８が電気的に接続されてＬＥＤ１０が実装されている。発光素子としては、ＬＥＤの他に、レーザ等の光を出射するものであれば本装置に適用できる。 In the lighting device 12, the metal wiring pattern 6 and the electrode 8 are electrically connected to the base substrate 1 via the solder bumps 7, and the LED 10 is mounted. As the light emitting element, any device that emits light such as a laser in addition to the LED can be applied to this apparatus.
ベース基板１は、高い熱伝導性を有するものとするが、熱伝導率が高く、従来から一般に実装基板として使用されている、例えば、エポキシ樹脂基板の熱伝導率より高ければよく、金属基板であることが好ましい。特に、アルミニウム、アルミニウム合金、銅、銅系合金等の熱伝導率に優れる材質で形成された基板であることが好ましい。本実施の形態では、３ｍｍ厚のアルミニウム基板を用いた。 The base substrate 1 has high thermal conductivity. However, the base substrate 1 has a high thermal conductivity and is conventionally used as a mounting substrate. For example, it may be higher than the thermal conductivity of an epoxy resin substrate. Preferably there is. In particular, the substrate is preferably formed of a material having excellent thermal conductivity such as aluminum, aluminum alloy, copper, and copper-based alloy. In this embodiment, a 3 mm thick aluminum substrate is used.
第１の絶縁層２は、ベース基板１と配線パターン６との絶縁性が十分確保され、高い熱伝導性を有するものであればよいが、例えば、セラミック、アルミナ、窒化アルミニウム、及び、アルミアルマイト等が挙げられる。本実施の形態では、８０μｍ厚のアルミナ層を用いた。 The first insulating layer 2 may be any material as long as the insulation between the base substrate 1 and the wiring pattern 6 is sufficiently secured and has high thermal conductivity. For example, ceramic, alumina, aluminum nitride, and aluminum alumite Etc. In this embodiment, an alumina layer having a thickness of 80 μm is used.
放熱層５は、高い熱放射性を有する材料により形成され、空気に接する側の表面を粗面あるいは凹凸面に形成してもよく、また、一般的なヒートシンクと同様の形状に形成したものであってもよい。放熱層５を構成する材料としては、例えば、アルミアルマイト、アルミナ、及び、窒化アルミニウム等が挙げられる。本実施の形態では、５０μｍ厚のアルミアルマイト層を用いた。また、放熱層５は、例えば、プラズマ溶射、陽極酸化、スピンコート、ＣＶＤ、ＰＶＤ、蒸着により形成することができる。 The heat dissipating layer 5 is formed of a material having high thermal radiation, and the surface in contact with air may be formed into a rough surface or an uneven surface, or formed in the same shape as a general heat sink. May be. Examples of the material constituting the heat dissipation layer 5 include aluminum alumite, alumina, and aluminum nitride. In this embodiment, an aluminum alumite layer having a thickness of 50 μm is used. The heat dissipation layer 5 can be formed by, for example, plasma spraying, anodic oxidation, spin coating, CVD, PVD, or vapor deposition.
ＬＥＤ１０は、バンプ７によりベース基板１に固着され、ベース基板１に所定のパターンで配線された金属の配線パターン６とＬＥＤ１０の２つの電極８で電気的に接続されている。 The LED 10 is fixed to the base substrate 1 by bumps 7, and is electrically connected to the metal wiring pattern 6 wired in a predetermined pattern on the base substrate 1 by the two electrodes 8 of the LED 10.
尚、上記の説明、及び、図１では、照明装置１２は、ベース基板１にＬＥＤ１０が1個実装されたものを示したが、これに限らず、ベース基板１にＬＥＤ１０を複数個実装して照明装置１２を構成するようにしてもよい。 In the above description and FIG. 1, the lighting device 12 is shown in which one LED 10 is mounted on the base substrate 1. However, the present invention is not limited to this, and a plurality of LEDs 10 are mounted on the base substrate 1. The lighting device 12 may be configured.
（第１の実施の形態による作用効果）
高い熱伝導性を有するベース基板１を用いた場合、アルミニウム等の金属は高い熱伝導率を有し、熱抵抗が小さく、ＬＥＤ１０で発生する熱がベース基板１を通して拡散されるので、ＬＥＤ１０の放熱に有利な効果を有する。
(Operational effects according to the first embodiment)
When the base substrate 1 having high thermal conductivity is used, a metal such as aluminum has high thermal conductivity, low thermal resistance, and heat generated in the LED 10 is diffused through the base substrate 1, so that the heat dissipation of the LED 10 is achieved. Has an advantageous effect.
また、放熱層５の放射率は大きいため、ＬＥＤ１０を大電流領域で使用しても、効率的に熱を放射することができ、高輝度の照明が可能となる。 Moreover, since the emissivity of the heat dissipation layer 5 is large, even when the LED 10 is used in a large current region, heat can be radiated efficiently, and illumination with high brightness is possible.
（従来例との比較）
図４は、従来の回路用金属基板及びこれに光源用素子が実装された照明装置を示す図である。図４（ａ）は、回路用金属基板及び照明装置の構成を断面図で示すものであり、（ｂ）は、ＬＥＤで発生する熱の放熱モデルを示す等価熱回路を示す図である。
(Comparison with conventional example)
FIG. 4 is a diagram showing a conventional circuit metal substrate and a lighting device on which a light source element is mounted. FIG. 4A is a cross-sectional view showing the configuration of the circuit metal substrate and the lighting device, and FIG. 4B is a diagram showing an equivalent thermal circuit showing a heat dissipation model of heat generated by the LED.
図４（ａ）において、従来の照明装置は、エポキシ樹脂で形成されたエポキシ基板１０２とアルミニウム基板１０１とが貼り合わされた実装基板上に、はんだバンプ１０７を介して配線パターン１０６と電極１０８が電気的に接続されてＬＥＤ１１０が実装されている。 In FIG. 4A, in the conventional lighting device, the wiring pattern 106 and the electrode 108 are electrically connected via a solder bump 107 on a mounting substrate in which an epoxy substrate 102 formed of an epoxy resin and an aluminum substrate 101 are bonded together. LEDs 110 are mounted in a connected manner.
ここで、図１（ｂ）に示した第１の実施の形態に係る照明装置のＬＥＤで発生する熱の放熱モデルと、図４（ｂ）に示した従来の照明装置のＬＥＤで発生する熱の放熱モデルとを比較する。各図の点線で囲まれた部分の熱抵抗を比較する。実装面１０ｍｍ×１０ｍｍ、エポキシ樹脂層厚８０μｍ、ＬＥＤと基板の接合部でのジャンクション温度１００℃、周囲温度３０℃と仮定する。 Here, a heat dissipation model of heat generated in the LED of the lighting device according to the first embodiment shown in FIG. 1B and heat generated in the LED of the conventional lighting device shown in FIG. 4B. Compare with the heat dissipation model. The thermal resistance of the part surrounded by the dotted line in each figure is compared. Assume that the mounting surface is 10 mm × 10 mm, the epoxy resin layer thickness is 80 μm, the junction temperature at the junction between the LED and the substrate is 100 ° C., and the ambient temperature is 30 ° C.
従来の照明装置における実装では、エポキシ樹脂で形成されたエポキシ基板１０２からアルミニウム基板１０１までの伝導による熱抵抗は次のようになる。エポキシ基板の熱抵抗Ｒ１０２＝２．６７℃／Ｗとアルミニウム基板の熱抵抗Ｒ１０１＝０．１３℃／Ｗを合成して２．８℃／Ｗ。また、放射の熱抵抗Ｒ１０３＝１０２７０．２８℃／Ｗと自然対流の熱抵抗Ｒ１０４＝８３７．６２℃／Ｗを合成して、７７４．４６℃／Ｗである。よって、卜一タルの熱抵抗７７７．２６℃／Ｗとなる。 In the mounting in the conventional lighting device, the thermal resistance by conduction from the epoxy substrate 102 made of epoxy resin to the aluminum substrate 101 is as follows. The thermal resistance R 102 of the epoxy substrate = 2.67 ° C./W and the thermal resistance R 101 of the aluminum substrate = 0.13 ° C./W were combined to obtain 2.8 ° C./W. Further, by combining the thermal resistance R 103 = 10270.28 ℃ / W and the thermal resistance R 104 = 837.62 ℃ / W of natural convection of radiation, which is 774.46 ° C. / W. Therefore, the thermal resistance of the total is 777.26 ° C./W.
一方、本発明の第１の実施の形態に係る照明装置では、裏面に高い熱放射性材料の放熱層５を形成しているので、第１の絶縁層２であるアルミナ層からベース基板１であるアルミニウム基板までの伝導による熱抵抗は次のようになる。ベース基板１の熱抵抗Ｒ１＝０．１３℃／Ｗと第１の絶縁層２の熱抵抗Ｒ２＝０．０２℃／Ｗ、放熱層５の熱抵抗Ｒ５＝０．００５９℃／Ｗを合成して０．１５５９℃／Ｗ。また、放射の熱抵抗Ｒ１３＝１１６５．８７℃／Ｗと自然対流の熱抵抗Ｒ１４＝８３７．６２℃／Ｗを合成して４８７．４３℃／Ｗである。よって、トータルの熱抵抗は４８７．５９℃／Ｗとなる。 On the other hand, in the illuminating device according to the first embodiment of the present invention, since the heat radiation layer 5 of a high heat radiation material is formed on the back surface, the base substrate 1 is formed from the alumina layer which is the first insulating layer 2. The thermal resistance due to conduction to the aluminum substrate is as follows. The thermal resistance of the base substrate 1 R 1 = 0.13 ℃ / W and the first thermal resistance R 2 = 0.02 ℃ / W of the insulating layer 2, the thermal resistance of the heat dissipation layer 5 R 5 = 0.0059 ℃ / W To 0.1559 ° C./W. Further, the thermal resistance of radiation R 13 = 1165.87 ° C./W and the natural convection thermal resistance R 14 = 837.62 ° C./W are combined to be 487.43 ° C./W. Therefore, the total thermal resistance is 487.59 ° C./W.
ベース基板１の裏面に高い熱放射性材料の放熱層５を薄くコーティングしたことにより放射による熱抵抗が小さくなり、第１の実施の形態では従来に比べて、トータルでの熱抵抗が37%減少して大きな放熱効果を有する。また、放熱層の空気に触れる側の表面を粗面又は凹凸面により形成することにより、放射面積の増大及び対流伝熱の増大を図ることができ、さらに放熱効果を向上させることができる。 By thinly coating the heat radiation layer 5 of a high heat radiation material on the back surface of the base substrate 1, the thermal resistance due to radiation is reduced. In the first embodiment, the total thermal resistance is reduced by 37% compared to the conventional case. And has a large heat dissipation effect. In addition, by forming the surface of the heat dissipation layer on the side in contact with air with a rough surface or an uneven surface, it is possible to increase the radiation area and convective heat transfer, and to further improve the heat dissipation effect.
また、本発明の第１の実施の形態に係る光源用基板に発光素子を実装することにより、大電流領域においても使用可能で、高出力化にも対応可能な照明装置が可能となる。 Further, by mounting the light emitting element on the light source substrate according to the first embodiment of the present invention, an illumination device that can be used in a large current region and can cope with high output can be obtained.
（第２の実施の形態）
図２は、本発明の第２の実施の形態に係る光源用基板及び光源用基板に光源用素子が実装された照明装置を示す図である。図２は、第２の実施の形態に係る光源用基板及び照明装置の構成を断面図で示すものである。
(Second Embodiment)
FIG. 2 is a diagram showing a light source substrate and a lighting device in which a light source element is mounted on the light source substrate according to the second embodiment of the present invention. FIG. 2 is a cross-sectional view showing the configuration of the light source substrate and the illumination device according to the second embodiment.
第２の実施の形態に係る光源用基板１１は、高い熱伝導性を有するベース基板１と、光源用素子が実装される実装面側に形成された第２の絶縁層３と、実装面と反対側に形成された放熱層５と、第２の絶縁層３を介して実装面側に形成された金属の配線パターン６とからなる。ここで、光源用素子とは、ＬＥＤ，ＬＤ等の光源となる発光素子と、この発光素子を駆動あるいは制御するために必要となる回路素子あるいは周辺素子を含む。 The light source substrate 11 according to the second embodiment includes a base substrate 1 having high thermal conductivity, a second insulating layer 3 formed on the mounting surface side on which the light source element is mounted, a mounting surface, The heat dissipation layer 5 is formed on the opposite side, and the metal wiring pattern 6 is formed on the mounting surface side with the second insulating layer 3 interposed therebetween. Here, the light source element includes a light emitting element serving as a light source such as an LED or an LD, and a circuit element or a peripheral element necessary for driving or controlling the light emitting element.
また、照明装置１２は、ベース基板１上にはんだバンプ７を介して金属の配線パターン６と電極８が電気的に接続されてＬＥＤ１０が実装されている。発光素子としては、ＬＥＤの他に、レーザ等の光を出射するものであれば本装置に適用できる。 In the lighting device 12, the metal wiring pattern 6 and the electrode 8 are electrically connected to the base substrate 1 via the solder bumps 7, and the LED 10 is mounted. As the light emitting element, any device that emits light such as a laser in addition to the LED can be applied to this apparatus.
ベース基板１は、第１の実施の形態と同様であるので、説明を省略する。 Since the base substrate 1 is the same as that of the first embodiment, description thereof is omitted.
第２の絶縁層３は、ベース基板１と配線パターン６との絶縁性が十分確保され、高い熱伝導性を有し、かつ、可視光領域では高い反射率を示し、赤外領域では高い放射性を示す材料により形成されている。また、可視光領域で高い反射率となるために、光源用素子の反射板として利用できる白色の絶縁材料により形成されている。尚、白色に限られず、本発明の実施の形態に係る照明装置が照明として利用できるものであればよく、上記照明色が得られる反射スペクトル特性を有していれば光源用素子の反射板として利用できる。 The second insulating layer 3 has sufficient insulation between the base substrate 1 and the wiring pattern 6, has high thermal conductivity, shows high reflectance in the visible light region, and has high radiation in the infrared region. It is formed with the material which shows. Further, in order to obtain a high reflectance in the visible light region, it is formed of a white insulating material that can be used as a reflection plate of a light source element. In addition, it is not restricted to white, what is necessary is just to be able to use the illuminating device which concerns on embodiment of this invention as illumination, and if it has the reflection spectrum characteristic from which the said illumination color is obtained, as a reflector of the element for light sources Available.
第２の絶縁層３を構成する材料としては、例えば、溶射アルミナ又は溶射Ｙ２Ｏ３が挙げられる。この第２の絶縁層３は、絶縁性と共に高い熱伝導性を十分発揮させるために、層厚さは厚い方が好ましく、本実施の形態では８０μｍとしている。 Examples of the material constituting the second insulating layer 3 include sprayed alumina or sprayed Y 2 O 3 . The second insulating layer 3 preferably has a thick layer thickness in order to sufficiently exhibit high thermal conductivity as well as insulation, and is set to 80 μm in the present embodiment.
放熱層５は、第１の実施の形態と同様であるので、説明を省略する。 Since the heat radiation layer 5 is the same as that of the first embodiment, the description thereof is omitted.
図３は、第２の実施の形態に係る光源用基板に光源用素子が実装され、光源用素子及び第２の絶縁層３を覆うようにカバー１３が形成された照明装置を示す図である。光源用素子から発光した光は、カバー１３を通して照明装置の外へ出射すると共に、高い反射率を有する第２の絶縁層３を反射板として反射し、カバー１３を通して照明装置の外へ出射される。 FIG. 3 is a diagram showing an illumination device in which a light source element is mounted on a light source substrate according to the second embodiment, and a cover 13 is formed so as to cover the light source element and the second insulating layer 3. . Light emitted from the light source element is emitted to the outside of the lighting device through the cover 13, and the second insulating layer 3 having a high reflectance is reflected as a reflecting plate, and is emitted to the outside of the lighting device through the cover 13. .
（第２の実施の形態による効果）
第１の実施の形態による効果に加え、実装面側に高い反射率を有する第２の絶縁層３を形成しているので、放熱に優れると共に反射効率の高い照明装置が可能となる。また、図３に示したように、カバーを有する照明装置等では、カバー内部で反射した光が高い反射率を有する第２の絶縁層３を反射板として再度反射されて照明装置の外へ出射するので、特に反射効率の高い照明装置が可能となる。
(Effects of the second embodiment)
Since the second insulating layer 3 having a high reflectance is formed on the mounting surface side in addition to the effects of the first embodiment, an illuminating device having excellent heat dissipation and high reflection efficiency is possible. Also, as shown in FIG. 3, in a lighting device or the like having a cover, the light reflected inside the cover is reflected again by using the second insulating layer 3 having a high reflectance as a reflecting plate and is emitted out of the lighting device. Therefore, an illumination device with particularly high reflection efficiency is possible.
（実施の形態の効果）
本発明の実施の形態によれば、以下のような効果を有する。
（１）高い熱伝導性を有するベース基板１を用いた場合、アルミニウム等の金属は高い熱伝導性を有し、熱抵抗が小さく、ＬＥＤ１０で発生する熱がベース基板１を通して拡散されるので、ＬＥＤ１０の放熱に有利な効果を有する。
（２）放熱層５の放射率は大きいため、ＬＥＤ１０を大電流領域で使用しても、効率的に熱を放射することができ、高輝度の照明が可能となる。
（３）ベース基板１の実装面側に高い反射率を有する第２の絶縁層３を形成しているので、放熱に優れると共に反射効率の高い照明装置が可能となる。
(Effect of embodiment)
The embodiment of the present invention has the following effects.
(1) When the base substrate 1 having high thermal conductivity is used, a metal such as aluminum has high thermal conductivity, a low thermal resistance, and heat generated by the LED 10 is diffused through the base substrate 1. This has an advantageous effect on heat dissipation of the LED 10.
(2) Since the emissivity of the heat dissipation layer 5 is large, even if the LED 10 is used in a large current region, heat can be radiated efficiently, and illumination with high luminance is possible.
(3) Since the second insulating layer 3 having a high reflectance is formed on the mounting surface side of the base substrate 1, an illuminating device having excellent heat dissipation and high reflection efficiency can be achieved.
従って、以上をまとめると、本発明の光源用基板によれば、熱抵抗が小さく放熱効果及び反射効率が高いので、これを用いて照明装置を構成すれば、発光素子を大電流領域で使用可能となり、また、高出力化にも対応可能な照明装置を可能とすることができる。 Therefore, in summary, according to the light source substrate of the present invention, since the thermal resistance is small and the heat dissipation effect and the reflection efficiency are high, if a lighting device is configured using this, the light emitting element can be used in a large current region. In addition, it is possible to enable a lighting device that can cope with high output.
１ ベース基板
２ 第１の絶縁層
３ 第２の絶縁層
５ 放熱層
６ 配線パターン
７ はんだバンプ
８ 電極
１０ ＬＥＤ
１１ 光源用基板
１２ 照明装置
１３ カバー
DESCRIPTION OF SYMBOLS 1 Base substrate 2 1st insulating layer 3 2nd insulating layer 5 Heat radiation layer 6 Wiring pattern 7 Solder bump 8 Electrode 10 LED
11 Light Source Board 12 Illumination Device 13 Cover
Claims (12)
高い熱伝導性を有するベース基板と、
前記ベース基板の前記光源用素子が実装される実装面側の面に形成された高い熱伝導性、及び熱放射性を有する絶縁層と、
前記絶縁層を介して前記実装面側に形成された配線パターンと、
前記ベース基板の前記実装面側と反対側の面に形成された高い熱放射性を有する放熱層とを有し、
前記絶縁層の厚さは、前記放熱層の厚さよりも厚く設定されていることを特徴とする光源用基板。 A light source substrate on which a light source element is mounted,
A base substrate having high thermal conductivity;
An insulating layer having high thermal conductivity and thermal radiation formed on a surface on the mounting surface side on which the light source element of the base substrate is mounted;
A wiring pattern formed on the mounting surface side through the insulating layer;
Have a heat radiation layer having a mounting surface opposite to the high thermal radiation property formed on the surface of the base substrate,
The light source substrate according to claim 1, wherein a thickness of the insulating layer is set larger than a thickness of the heat dissipation layer .
前記光源用基板は、請求項１から１１のいずれかに記載の光源用基板であることを特徴とする照明装置。 A lighting device having a light source element mounted on a light source substrate,
The lighting device according to claim 1, wherein the light source substrate is the light source substrate according to claim 1.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| FI20085053A0 (en) * | 2008-01-22 | 2008-01-22 | Valtion Teknillinen | Method of performing thermal spraying and applications according to the procedure |
| KR101517930B1 (en) * | 2008-12-11 | 2015-05-06 | 주식회사 케이엠더블유 | Multi-chip LED package having a high performance radiator |
| JP5146356B2 (en) | 2009-02-24 | 2013-02-20 | 豊田合成株式会社 | Light emitting device and manufacturing method thereof |
| KR101003591B1 (en) | 2009-05-28 | 2010-12-22 | 삼성전기주식회사 | Metallic laminate and manufacturing method of light emitting diode package using the same |
| JP5507940B2 (en) * | 2009-09-25 | 2014-05-28 | パナソニック株式会社 | Lighting device |
| WO2011077900A1 (en) * | 2009-12-22 | 2011-06-30 | シャープ株式会社 | Light emitting diode element, light source device, surface light source illumination device, and liquid crystal display device |
| JP2011138640A (en) * | 2009-12-28 | 2011-07-14 | Kyoritsu Densho:Kk | Lighting fixture for tunnel |
| US20120305973A1 (en) * | 2010-02-08 | 2012-12-06 | Yoshihiko Chosa | Light-emitting device and surface light source device using the same |
| US8570224B2 (en) * | 2010-05-12 | 2013-10-29 | Qualcomm Incorporated | Apparatus providing thermal management for radio frequency devices |
| JP5846408B2 (en) * | 2010-05-26 | 2016-01-20 | 東芝ライテック株式会社 | Light emitting device and lighting device |
| KR101194456B1 (en) | 2010-11-05 | 2012-10-24 | 삼성전기주식회사 | Heat-radiating substrate and method for manufacturing the same |
| US20140097003A1 (en) * | 2012-10-05 | 2014-04-10 | Tyco Electronics Amp Gmbh | Electrical components and methods and systems of manufacturing electrical components |
| JP2013229639A (en) * | 2013-08-13 | 2013-11-07 | Nec Lighting Ltd | Light-emitting device and method for manufacturing the same |
| US10276765B2 (en) | 2013-12-27 | 2019-04-30 | Sharp Kabushiki Kaisha | Substrate for light emitting devices, light emitting device, and method for producing substrate for light emitting devices |
| JP6215360B2 (en) * | 2014-01-10 | 2017-10-18 | シャープ株式会社 | LIGHT EMITTING DEVICE SUBSTRATE, LIGHT EMITTING DEVICE, AND LIGHT EMITTING DEVICE SUBSTRATE MANUFACTURING METHOD |
| CN106134297B (en) * | 2014-04-04 | 2019-08-06 | 夏普株式会社 | Light emitting device substrate, light emitting device and lighting device |
| JP6335638B2 (en) * | 2014-05-21 | 2018-05-30 | シチズン電子株式会社 | Heat dissipation board, manufacturing method thereof, and LED light emitting device using the heat dissipation board |
| JP6311887B2 (en) * | 2015-05-15 | 2018-04-18 | 豊田合成株式会社 | Light emitting element substrate and light emitting device |
| JP2017195258A (en) * | 2016-04-19 | 2017-10-26 | 市光工業株式会社 | Light-source device, and light-emitting device for movable body |
| JP7240196B2 (en) * | 2019-02-19 | 2023-03-15 | 日本特殊陶業株式会社 | Semiconductor module component, manufacturing method thereof, and semiconductor module |
| JP2020178057A (en) * | 2019-04-19 | 2020-10-29 | シチズン時計株式会社 | Circuit board and light emitting device using circuit board |
| CN112746242A (en) * | 2020-12-29 | 2021-05-04 | 佛山桃园先进制造研究院 | Electric heating coating for improving electric energy utilization efficiency and temperature control and preparation method thereof |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55154564A (en) * | 1979-05-18 | 1980-12-02 | Sumitomo Electric Ind Ltd | Lamination-covered sintered hard alloy parts |
| JPS62287676A (en) * | 1986-06-06 | 1987-12-14 | Kobe Steel Ltd | Substrate for led formed by coating al plate with ceramic by flame spraying |
| JPH02191396A (en) * | 1988-12-14 | 1990-07-27 | Showa Denko Kk | Manufacture of metallic base board |
| JPH09331123A (en) * | 1996-06-13 | 1997-12-22 | Furukawa Electric Co Ltd:The | Metallic base multilayer wiring board |
| JP2003060243A (en) * | 2001-08-17 | 2003-02-28 | Matsushita Electric Ind Co Ltd | Composite light-emitting element |
| WO2005123627A1 (en) * | 2004-06-21 | 2005-12-29 | Tokuyama Corporation | Nitride sintered compact and method for production thereof |
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2006
- 2006-05-23 JP JP2006142552A patent/JP4880358B2/en not_active Expired - Fee Related
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