WO2011080058A1

WO2011080058A1 - Radiation emitting light-guiding device for illumination, module having a radiation emitting light-guiding device and method for producing a radiation emitting light-guiding device

Info

Publication number: WO2011080058A1
Application number: PCT/EP2010/069520
Authority: WO
Inventors: Siegfried Herrmann; Stefan Illek
Original assignee: Osram Opto Semiconductors Gmbh
Priority date: 2009-12-30
Filing date: 2010-12-13
Publication date: 2011-07-07
Also published as: DE102009060759A1; DE112010005057A5

Abstract

The invention relates to a radiation emitting device having a light guide (2) and at least one carrier plate (1). The carrier plate (1) forms a primary plane (11). According to the invention, at least one radiation emitting semiconductor element (3) is arranged in or on a bent part of the carrier plate (1), wherein a radiation emitting surface (32) of the semiconductor element (3) is at an angle α to the primary plane (11) of the carrier plate (1). The light guide (2) is arranged on the side of the carrier plate (1) facing the semiconductor element (3). The invention further relates to a module having a radiation emitting device and to method for producing a radiation emitting device.

Description

description

RADIATION-EMITTING LIGHTING DEVICE FOR LIGHTING, MODULE WITH SUCH A DEVICE AND METHOD FOR PRODUCING SUCH A LIGHTING DEVICE

This patent application claims the priority of German Patent Application 10 2009 060 759.5, the disclosure of which is hereby incorporated by reference.

The present invention relates to a

A radiation-emitting device having a light guide and a support plate on which a radiation-emitting

Semiconductor component is arranged. Furthermore, the invention relates to a method for producing such

A radiation-emitting device and a module with a plurality of such radiation-emitting devices.

Radiation-emitting devices are used, for example, for the backlighting of lighting modules, such as flat screens. These are always smaller device dimensions, such as the

Device height, desired. In addition, in such

Lighting modules desired a homogeneous radiation characteristic of the devices.

The invention is based on the object

To provide a radiation-emitting device, the low device height and at the same time a homogeneous

Has emission characteristic. Furthermore, it is a further object of the invention to provide a method for producing such a radiation-emitting device, which is characterized in particular by a cost-effective Manufacturing process distinguished. Another object of the invention is to provide a module with a plurality of such radiation-emitting devices. These tasks are performed by a radiation-emitting

Device with the features of claim 1, a

radiation-emitting device having the features of claim 2, a module having the features of claim 14 and a method for producing a device with the

Characteristics of claim 15 solved. advantageous

Embodiments and preferred developments of

Device, the module and the manufacturing process are the subject of the dependent claims. According to the invention, a radiation-emitting device is provided with a light guide and at least one support plate, wherein the support plate forms a main plane and has at least one partial region that is at an angle to the main plane. The portion and the support plate are integrally formed. On the subarea is a

Radiation-emitting semiconductor device arranged. The light guide is arranged on the carrier plate and has at least one cavity in which the partial region is arranged.

The portion of the support plate thus protrudes from the

Main plane of the support plate out. In particular, the portion of the support plate protrudes into the cavity of the light guide. The carrier plate and the light guide are

preferably coordinated such that the

Part of the support plate and the cavity of the light guide within the device occupy the same area of the device, so that the light guide and the support plate directly can be mechanically connected to each other, without causing a distance between the support plate and the

Optical fiber is necessary. The size of the cavity of the light guide is preferably to the size of the sub-area including the

Radiation-emitting semiconductor device adapted. The optical waveguide thus completely surrounds the subarea and the radiation-emitting semiconductor component arranged thereon, wherein preferably only one distance, which is necessary for mounting the optical waveguide on the carrier plate, is arranged between the subarea and the subarea

Radiation-emitting semiconductor device and the

Light guide is formed.

The light guide is preferably provided with a main surface of

Carrier plate mechanically connected, more preferably, the mechanical connection is positive and non-positive. The cavity of the light guide preferably forms a

rectangular recess, wherein the recess does not completely penetrate the light guide. The cavity is arranged in particular on the side facing the carrier plate of the light guide. The side facing away from the carrier plate side of the light guide thus preferably has no cavity and is thus formed over the entire surface.

In an alternative embodiment is a

radiation-emitting device having an optical waveguide, at least one carrier plate, which forms a main plane, and at least one radiation-emitting

Semiconductor device provided. The carrier plate has at least one opening. The radiation-emitting Semiconductor component has a lateral expansion plane, which is at an angle to the main plane, and is guided at least partially through the opening of the carrier plate. The light guide is on the

Radiation-emitting semiconductor device facing side of the carrier plate arranged.

The lateral expansion plane is to be understood in particular as the plane of the semiconductor component which is perpendicular to a main emission direction of the component.

In particular, underneath is the plane perpendicular to one

Growth direction of semiconductor layers of the device to understand. The breakthrough of the carrier plate preferably has a rectangular or prismatic shape. In these

prismatic or rectangular breakthrough is preferably the semiconductor device, preferably also in

prismatic form, introduced. A radiation-emitting surface of the semiconductor component is preferably arranged above the carrier plate. An electric

Contacting of the semiconductor device, however, preferably takes place below the carrier plate. The semiconductor device is thus vertical to

Main plane of the support plate mounted, and is integrated with an extended electrical connection area in the opening of the support plate. For electrical contacting takes place a conductor passage through the

Breakthrough of the carrier plate.

The light guide can be arranged directly on the support plate. In this case, the optical fiber has at least one Cavity, in which the semiconductor device is arranged. For example, the light guide is a glass plate or a casting plate. The light guide may alternatively be a light guide foil, for example a diffuser foil. In this case, the optical fiber does not necessarily have to have a cavity. The light guide can be arranged on the side facing away from the carrier plate side of the semiconductor device.

Such a device designed is advantageously formed particularly flat. For example, the

Device so a total height of less than 2 mm. The semiconductor component emits radiation preferably along the main plane of the carrier plate. In plan view of the device, the semiconductor device has a small lateral extent of at most 100 μιη, which are advantageously barely perceptible by an observer with the naked eye.

In a further education is at one of the

radiation-emitting surface of the semiconductor device opposite side a heat element, such as a metal plate, arranged for improved heat dissipation. The heat element can by the breakthrough of

Be guided and angle-shaped with a support plate

Be connected underside of the support plate.

The semiconductor device and / or the heat element can thereby electrically by means of metallic spring contacts

be contacted. The spring contacts are introduced in the breakthrough of the carrier plate. In a development, the carrier plate has a plurality of openings. In this case, the device comprises a plurality of semiconductor devices, each of which is passed through an aperture. A radiation-emitting surface of the semiconductor components is in each case preferably arranged above the carrier plate, wherein the radiation-emitting surfaces are each preferably directed in the same direction. The radiation-emitting semiconductor component preferably has an active layer for generation

electromagnetic radiation. The active layer preferably has a pn junction for generating radiation. The semiconductor component is preferably designed as a "substrateless semiconductor component." As "substrateless

Semiconductor device "is in the context of the application

Semiconductor device considered during its production, the growth substrate on which a semiconductor layer sequence, for example epitaxially grown,

has been completely replaced. Furthermore, substrateless components preferably have no carrier. such

Substrate-less components are for example in the

Patent DE 10 2007 004 304 AI described, whose

The disclosure is hereby explicitly incorporated by reference.

Substrate-free semiconductor components preferably have a p-doped semiconductor layer and an n-doped one

Semiconductor layer, which is a light-emitting

Layer sequence form. The semiconductor device preferably emits light in two main emission directions. there is the emission in both main emission directions

preferably symmetrical.

Preferably, the semiconductor layers of the

Semiconductor device on a nitride, phosphide or

Arsenide compound semiconductor. Based on nitride, phosphide or arsenide compound semiconductors means in

present context that the active

Epitaxial layer sequence or at least one layer thereof, an I I I / V semiconductor material having the composition

In _x GayAl _] __ _x _yP, In _x GayAl _] __ _x _yN or In _x GayAl _] __ _x _yAs, each 0 <x, y <1 and x + y <1.

The height of the individual substrateless components is preferably less than 50 ym.

The semiconductor component may further be formed as a flip-chip component. In this embodiment, both

electrical connection areas of the device on a common surface, which preferably compared to a

Light exit surface of the device is electrically isolated from each other isolated (flip-chip technology), so that the device can be mounted directly without further connecting wires with the contacting side to the support plate. A light-emitting diode, which is electrically contacted by flip-chip technology, and a method for the production thereof, for example, from

Publication DE 10 2006 019 373 AI known, the disclosure of which is hereby incorporated by reference.

The carrier plate preferably has a metal, particularly preferably the carrier plate is a metal foil or a metal plastic composite foil. By means of a punching or Etching process, the portions are formed in the support plate, wherein the portions are then bent out of the main plane of the support plate so that they are at an angle to the main plane.

The main plane of the carrier plate preferably tensions an x-y plane and thus has no z-component. The

Extension plane of the subarea and / or the

Semiconductor device preferably protrudes from the x-y plane, so preferably has an x-component, a y-component and a z-component.

In a preferred embodiment, the angle is in a range between 45 and 95 ° inclusive inclusive. Preferably, the angle is in a range between 85 ° and 95 ° inclusive. Particularly preferably, the subregion is perpendicular to the main plane of the carrier plate.

The main emission direction of the radiation-emitting

Semiconductor device preferably runs perpendicular to the extension of the subregion. If the angle is therefore about 90 °, the main emission direction of the

Semiconductor device parallel to the main plane of the

Carrier plate.

In a further preferred embodiment, the main emission direction of the radiation-emitting

Semiconductor device at an angle ß between -30 ° and 30 ° to the main plane of the support plate. The main emission direction of the semiconductor component therefore runs essentially parallel to the main plane of the carrier plate. In this case, the light guide preferably leads the light emitted by the semiconductor component Radiation along a main extension direction of the

Optical fiber.

In a preferred embodiment, the light guide on scattering particles. At the scattering particles, the radiation emitted by the semiconductor component can be scattered homogeneously in all spatial directions. This will be in the

Light guide guided radiation homogeneously distributed in the light guide, so that advantageously a homogeneous

Abstrahlcharakteristik the device results, in particular a homogeneous luminous surface of the light guide.

For example, the light guide has a glass or one for the radiation emitted by the semiconductor component

transparent film, for example, a glass sheet.

Particularly preferably, the light guide is a diffuser. Under a diffusing screen is inter alia a light guide to be understood with scattering particles contained, in which the of the active layer of the semiconductor device

emitted radiation preferably undirected in all

Spaces is scattered. Preferred are the

Evenly distributed scattering particles in the light guide, so that the scattered radiation spreads evenly. As a result, color inhomogeneities over the emission angle can be reduced. A homogeneous radiation characteristic of the radiation emitted by the device is achieved with advantage.

The device preferably has a

Radiation decoupling surface on. The radiation decoupling surface of the device may be formed, for example, on a side surface of the light guide. In this case, the

Device a so-called "sidelooker", so a laterally emitting device. "Sidelooker" are the expert are known and therefore will not be closer at this point

discussed.

Alternatively, the radiation decoupling surface of the device from the surface facing away from the carrier plate of the

Be formed light guide. In this case, the

Device a so-called "surface emitter" or "vertical emitter". These too are known to the person skilled in the art and will therefore not be discussed further here.

In a preferred embodiment, the device has a thickness in a range between 0.75 mm and 1.25 mm. More preferably, the thickness is less than or equal to 1 mm. By integration of the subregions of the carrier plate into the light guide by means of the cavity, flat devices can advantageously be realized whose height is determined essentially by the height of the light guide. A

miniaturized device, in particular for

Backlighting different lighting modules can be used, can be achieved with advantage.

In a further preferred embodiment, the

Optical fiber on the carrier plate facing surface and / or the side surfaces on a mirror layer.

For example, the side surfaces and the

Support plate facing surface of the light guide with a metallic coating, such as a

Silver mirror, provided.

Alternatively, the carrier plate as a mirror layer

be educated. Through the mirror layers can from the

Led radiation emitted selectively in the optical waveguide and then at the

Radiation exit surface of the device are coupled out. If the side surfaces of the optical waveguide are mirrored, the radiation exit surface is arranged on the surface of the optical waveguide facing away from the carrier plate.

In a further preferred embodiment, the

Light guide on the side facing away from the support plate surface and / or the side surfaces of radiation extraction on. For example, they are facing away from the carrier plate

Surface roughened and / or the side surfaces of the light guide or have surveys, for example in the form of pyramids or domes on.

The radiation decoupling structures are in particular at the surface provided for the radiation decoupling

Device arranged. This can with advantage a

homogeneous radiation characteristic of the device can be achieved.

In a further preferred embodiment of the

Optical waveguide cylindrically shaped, wherein the main extension direction along the main plane of the

Support plate extends.

In particular, the light guide is designed as a horizontal cylinder, wherein a lateral surface of the light guide

partially rests on the support plate. The lateral surface of the light guide and the support plate are accordingly

partially positively and non-positively mechanically interconnected. On the lateral surface, a cavity is partially arranged, in which the portion of the support plate

is arranged. The expansion of the cavity is preferably adapted to the size of the partial area. This means that the depth of the cavity preferably corresponds to the height of the subregion, which preferably extends perpendicular to the main plane of the carrier plate. In a further preferred embodiment, the

Support plate shaped so that it rests completely on the lateral surface of the light guide.

The support plate is therefore itself as a lateral surface

formed, wherein the bending of the support plate determined after the bending of the lateral surface of the light guide. However, the lateral surface of the light guide is not completely enclosed by the carrier plate. In particular, only at a portion of the lateral surface of the light guide is the

Carrier plate on. The remaining portion of the lateral surface preferably forms the radiation output surface of the

Optical fiber.

In a further preferred embodiment, the

Device by means of at least one terminal mechanically

electrically and / or thermally connected.

The clamp is preferably a copper clamp. Preferably, the clamp is in direct contact with the molded carrier plate. In this case, the carrier plate is preferably designed to be electrically conductive. Preferably, the device is by means of two terminals, in particular Copper terminals, mechanically fastened, wherein the terminals are preferably arranged on two opposite edge regions of the light guide. In a further preferred embodiment, the

Device two carrier plates and the light guide two on two opposite sides arranged cavities, wherein in the two cavities in each case a partial area

is arranged, on which in each case a radiation-emitting semiconductor component is arranged. The

Main emission of the one radiation emitting

Semiconductor device is preferably in each case

Direction of the other radiation-emitting

Semiconductor device.

The carrier plates are preferably mechanically connected to one another with an electrically insulating layer. The carrier plates preferably have one another

mirror-symmetrical arrangement, wherein the mirror axis is in the region of the electrically insulating layer. The

Semiconductor components are arranged such that their emitted radiation is coupled into the optical waveguide and guided therein. In this case, the semiconductor components are on two opposite sides of the light guide

arranged so that a homogeneous with advantage

Radiation characteristic of the device is achieved. The radiation outcoupling side of the device is located in this case on the side remote from the carrier plate side of the light guide.

In a further preferred embodiment, the

Device on a plurality of carrier plates, each with an electrically insulating layer mechanically are interconnected, wherein preferably the carrier plates are arranged in series one after the other. The light guide in this case has a plurality of cavities, in each of which a partial region of a carrier plate is arranged, on each of which a radiation-emitting semiconductor component is arranged.

The support plates are in this embodiment advantageously not mirror-symmetrical, but congruent and arranged in series. The interconnected

Support plates are covered by a common light guide, which has a respective cavity corresponding to the formed partial regions. Each carrier plate preferably has a partial region on which a respective radiation-emitting semiconductor component is arranged, wherein the radiation-emitting elements

Semiconductor devices are preferably connected in series.

A contact of the respective radiation-emitting

Component is guided to an adjacent support plate, said electrical contact is electrically isolated from the own support plate by means of an electrically insulating layer. A second contact of the respective semiconductor component is preferably guided over the respective own carrier plate.

For external connection points that of the light guide

opposite side of the carrier plate two external

Connection contacts, preferably metal contacts, on. These may preferably be designed as heat sinks. As a result, in the semiconductor devices in operation with advantage generated heat can be dissipated sufficiently from the semiconductor devices, so that reduces the risk of damage to the semiconductor devices. In a preferred embodiment, the light guide is transparent to the radiation emitted by the semiconductor components. For example, the optical fiber has glass or a transparent plastic. In a further preferred embodiment, on the side facing away from the portion of the carrier plate side of the

Semiconductor device arranged a conversion plate. The conversion plate preferably converts a radiation of one wavelength emitted by the semiconductor component into radiation of a different wavelength. As a result, differently colored semiconductor components can be used in the device, depending on the respective requirement, whereby the special design of the

Device with advantage a homogeneously colored

Radiation coupling surface results.

By means of the scattering particles arranged in the light guide, an effective color mixing in the light guide can advantageously be achieved, in the event that a plurality of semiconductor components are used which emit radiation of different wavelengths in each case.

A module according to the invention preferably has a plurality of radiation-emitting devices according to the invention, which are preferably arranged side by side in a row or as a matrix, particularly preferably adjacent ones

Devices are mechanically interconnected. Preferably, the optical fibers of the individual device are in direct contact with adjacent optical fibers. Adjacent carrier plates are particularly preferably connected to one another mechanically by means of an electrically insulating layer. Such modules are particularly advantageous for the backlighting of lighting units, such as flat screens or LCDs (LCD: "Liquid Crystal Display").

In particular, a module can be achieved with advantage, which has a low module height and at the same time a

homogeneous radiation characteristic allows. Furthermore, such a module results in improved color mixing of the radiation emitted by the individual semiconductor components.

A method for producing a radiation-emitting device comprises the following method steps:

- Providing a support plate having a

Main level,

Punching out or etching at least one subregion into the carrier plate,

Applying and contacting a radiation-emitting semiconductor component on the subarea,

- Mechanical deformation of the portion such that the portion is at an angle to the main plane, and

- Applying a light guide having at least one cavity on the support plate such that the portion is disposed in the cavity. Advantageous embodiments of the method are analogous to the advantageous embodiments of the device and vice versa. By means of the method is in particular a here described device and / or a module described here produced.

Preference is given before applying the semiconductor device region, the carrier plate with an electrical

insulating material, for example plastic,

coated. Particularly preferably, conductor tracks are applied to the electrically insulating material, which serve for electrical contacting of the semiconductor component.

Preferably, the semiconductor device is by means of a

Applied printing process on the sub-area and contacted mechanically and / or electrically. Preferably, the subregions are mechanically deformed such that a desired emission angle of the

Semiconductor device emitted radiation is enabled.

In a preferred embodiment of the method, the device is integrated into a lighting unit.

In a preferred embodiment, the support plate is in an injection mold for applying the light guide

arranged, wherein subsequently the optical fiber is produced by means of an injection molding process. Alternatively, a casting method for producing the optical fiber is used. As a result, for example, a cylindrical optical waveguide can be produced, wherein the subregions and the radiation-emitting semiconductor components disposed thereon are directly encapsulated or encapsulated with material of the optical waveguide, so that no distance between material of the optical waveguide

Fiber optic and sub-area and / or semiconductor device is formed. In a preferred embodiment, the device is potted with a plastic.

Further features, advantages, preferred embodiments and expediencies of the device, the module and the

Manufacturing process result from the below explained in connection with Figures 1 to 14

Embodiments. Show it:

Figures 1, 3, 5, 8 to 10, 12 to 14, 17A each one

schematic view of an embodiment of a module according to the invention or a device according to the invention,

Figure 2 is a schematic diagram of another

Embodiment of an inventive

Device, Figures 4, 11, 15A, 15B, 15D, 16A, 16B, 17B respectively

schematic representations of others

Embodiments of an inventive

Device in different stages of the method, Figures 6, 15C each show a schematic representation of a

Embodiment of a radiation-emitting semiconductor device, which in a

Device according to the invention is used, and

Figures 7, 18A, 18B each show a schematic representation of an embodiment of a light guide for a device according to the invention. Identical or equivalent components are each provided with the same reference numerals. The illustrated

Components as well as the proportions of the components among each other are not to be regarded as true to scale.

FIG. 1 shows a schematic view of a

A radiation-emitting device comprising a

Support plate 1 and a light guide 2. The support plate 1 forms a main plane 11 and has a portion 12 on. The portion 12 and the support plate 1 are integrally formed.

The main plane 11 lies, for example, in an x-y plane, thus has a horizontal course and points

in particular an x-component and a y-component, but not a z-component. The partial region 12 is at an angle to the main plane of the carrier plate 1, so that the partial region protrudes from the x-y plane, ie has an x component, a y component and a z component.

Preferably, the angle that the portion 12 has to the main plane 11, in an area between

including 85 ° and 95 ° inclusive. Especially

Preferably, the portion 12 is substantially perpendicular to the main plane eleventh

For example, the carrier plate 1 is a metal plate, a metal foil or a metal plastic composite foil. By means of a punching or etching process are doing in the

Support plate 1, the portion 12 formed and formed by mechanical deformation such that the portion 12 is at the angle to the main plane 11. The carrier plate 1 thus has an area in the main plane

Recess 13, the size of the portion 12th

corresponds. On a surface of the support plate 1, the light guide 2 is arranged, in particular positively and non-positively connected to a surface of the support plate 1. The light guide 2 is arranged on the side of the support plate 1, on which the portion 12 is formed. The light guide 2 preferably has a cavity 21 (not shown), in which the partial area 12 is arranged, in particular protrudes.

On the portion 2 is a radiation-emitting

Semiconductor device 3 is arranged, which has a

Has radiation emitting surface 32 through which in

Operation of the semiconductor device in the

Semiconductor device generated electromagnetic radiation is emitted. The radiation-emitting surface 32 of the radiation-emitting semiconductor component 3 extends along the plane of extent of the partial region 12.

If the portion 12 is therefore substantially perpendicular to the main plane 11 of the support plate 1, so is the

Radiation emitting surface 32 of the

radiation-emitting semiconductor device 3 in

Essentially perpendicular to the main plane 11 of the support plate. 1

The main emission direction 31 of the

Accordingly, the radiation emitted by the radiation-emitting semiconductor component runs essentially along

or parallel to the main plane 11 of the support plate. 1 The radiation-emitting semiconductor device 3 is

preferably a semiconductor body, for example an LED or an LED chip, which has an active layer. The active layer is in particular designed such that it is suitable for generating radiation. The semiconductor component is preferably a light-emitting diode chip, which is designed in particular as a substrateless chip. As a substrateless chip is considered in the context of the application, a chip during its production, the growth substrate, on the one

Semiconductor layer sequence comprising the semiconductor body, for example epitaxially grown, has been completely detached and has no carrier.

For example, the chip is composed of an n-doped semiconductor layer and a p-doped semiconductor layer, wherein an active, for

Radiation generation is formed suitable pn junction.

The semiconductor layers preferably comprise a III / V compound semiconductor material. A III / V compound semiconductor material comprises at least one element of the third main group such as Al, Ga, In, and a fifth main group element such as

for example, N, P, As. In particular, the

Term I I I / V compound semiconductor material is the group of binary, ternary and quaternary compounds which

at least one element from the third main group and at least one element from the fifth main group, in particular nitride, arsenide and phosphide compound semiconductors. Such a binary, ternary and quaternary compound may also contain, for example, one or more dopants and additional constituents

exhibit . On the radiation-emitting surface 32 of the radiation-emitting semiconductor component 3, a converter plate 34 may be arranged, which is the one of the

Semiconductor device emitted radiation of a first

Wavelength is converted into radiation of a second wavelength, so that the device comprises mixed radiation comprising

Radiation of the first wavelength and the radiation of the second wavelength emitted. The cavity of the light guide 2 is preferably formed in the region of the partial region 12 of the carrier plate 1.

In particular, the size of the cavity is related to the size of the cavity

Subrange and the radiation-emitting

Semiconductor component adapted so that the portion 12 and the radiation-emitting semiconductor device 3 can be arranged in the cavity of the light guide, wherein the optical waveguide 2 form-fitting manner to the main plane 11 of

Support plate 1 connects. Preferably, the light guide 2 does not protrude laterally beyond the support plate 1 in a plan view of the device.

The light guide 2 preferably has scattering particles on which the radiation emitted by the semiconductor component and / or the converted radiation are homogeneously scattered in all spatial directions. This can be an efficient

Color mixing in the optical waveguide 2 of the converted radiation and the radiation emitted by the semiconductor device radiation can be achieved. On the side facing away from the light guide 3 side of

Support plate 1 are electrical connection contacts. 6

arranged, in particular for the electrical contacting of the radiation-emitting semiconductor component. 3 are provided. Between the support plate 1 and the

Connection contacts 6, an electrically insulating layer is arranged, which electrically isolated from the carrier plate and the terminal contacts from each other (not shown). Through the support plate 1 and through the electrically insulating

Layer are preferably two openings, so-called "via", out, are guided by the conductor tracks, which the radiation-emitting semiconductor device 3 with the

Connecting contacts 6 electrically connect with each other (not shown). These are the tracks on the of the

Connection contacts remote surface of the support plate 1 and guided on the portion 12 to the semiconductor device 3 and electrically connected, wherein an electrical insulation, for example, an electrically insulating layer is provided between the conductor tracks, the support plate and the subregion.

Connected laterally to the connection contacts 6 is an electrically insulating layer 5, which can serve, for example, to connect the device shown in FIG. 1 in series to further devices, as shown for example in FIG. 1, and to connect them mechanically. The device has a main emission direction 4, which in the present exemplary embodiment is formed laterally of the device and by means of an arrow in FIG. 1

is shown. The device of the embodiment of Figure 1 is thus a side emitter, a so-called

"Sidelooker". The radiation decoupling surface 22 of the

Device is thus formed on a side surface or by the side surface of the light guide 2. Preferably, on the radiation decoupling surface 22nd

Radiation decoupling 24 arranged, which provides a homogeneous radiation over the entire

Generate radiation decoupling surface. For example, the radiation decoupling surface 22 has a roughening or

three-dimensional structures, such as pyramids or domes, for light extraction.

The remaining surfaces of the light guide 2, a

Mirror layer 23, for example, a silver layer, so that the of the semiconductor device 3

emitted radiation is guided to the radiation decoupling surface and coupled out there (not shown). The support plate 1 and the light guide 2 are in the

Embodiment of Figure 1 each rectangular in shape. The light guide 2 is for example a

Light distribution plate, such as a glass plate or a plastic plate, for those of the

Semiconductor device emitted radiation

has radiation-permeable properties.

Preferably, the carrier plate is a metal foil and the light guide is a plastic light guide. Advantageously, the composite plastic and metal is an effective heat sink, so that the heat generated during operation of the device can be effectively dissipated from the semiconductor device to the outside. Furthermore, this composite technique is advantageously inexpensive.

The entire structure of the device is advantageously very flat and essentially determined by the dimensions of the light guide 2. Such devices are for example due to the large radiation decoupling surface 22 and the flat design for the backlighting of flat screens and LCDs suitable. The device is designed in particular as a surface-mountable component which can be installed in an electronics-compatible manner (SMT components: "Surface Mounted Technology") .The device is distinguished by a cost-effective design and by a cost-effective production method.

FIG. 2 shows a schematic diagram of an exemplary embodiment of a device which has a plurality of

Radiation-emitting semiconductor devices 3 has. The light guide of the device is in the

Embodiment of Figure 2 for the sake of clarity not shown.

The device of FIG. 2 has four radiation-emitting semiconductor components 3, which are preferably substrateless light-emitting diode chips. Such light-emitting diode chips are known to the person skilled in the art, for example, from the document DE 10 2007 004 304, the disclosure content of which is hereby explicitly incorporated by reference. The semiconductor devices 3 each have

Radiation emitting surfaces 32, from which the emitted radiation from the semiconductor devices exits from these and is coupled into the optical waveguide. In each case two semiconductor devices 3 are arranged on opposite sides of the carrier plate 1. In particular, the radiation-emitting surfaces 32 of the respective opposing semiconductor components 3 are arranged such that they are emitted by the respective semiconductor components Radiation is directed in the direction of the opposite semiconductor device 3. The radiation emitted by the individual semiconductor components 3 is thus guided into the optical waveguide, where it is preferably scattered due to scattering particles in such a way that it is homogeneous

Distribution of the radiation takes place in the light guide.

The radiation output surface of the device is formed in the embodiment of Figure 2 on the side remote from the carrier plate surface of the light guide. The

Device of Figure 2 is therefore a surface emitter or a vertical emitter.

The main emission direction 4 of the device and the

Hauptabstrahlrichtung 31 of the semiconductor devices are shown in Figure 2 as arrows.

Due to the homogeneous distribution of the radiation of the individual semiconductor components in the light guide can be a homogeneous

Radiation over the entire radiation output surface 22 can be achieved. In particular, semiconductor devices are used, each having radiation in another

Wavelength range and therefore emit in another color locus, through the light guide and the therein

contained scattering particles an efficient light mixture can be achieved, resulting in a total of a homogeneously colored radiation decoupling surface, in particular luminous surface results. In particular, such an efficient color mixing takes place in the light guide.

Incidentally, the embodiment of Figure 2 is consistent with the embodiment of Figure 1, even if the

Representation of the individual components of the device Figure 2 differs from the embodiment of Figure 1 in part.

In the figures 3A to 3C are each different

Views of a device shown, which in particular has two radiation-emitting semiconductor devices 3. The semiconductor devices 3 are arranged according to the principle shown in Figure 2, that is the

Radiation emitting surfaces 32 of the

Semiconductor devices 3 are each aligned such that the radiation emitted by the devices 3 in

Direction of the respective other device is directed and so guided in the light guide 2 and there by the im

Light guide arranged scattering particles is homogeneously distributed.

The device of the example of Figure 3A sits down

in particular by two devices, as shown in Figure 1, together, in which case the devices are arranged mirror-inverted to each other. In particular, the mirror plane is arranged perpendicular to the carrier plate 1 in the region of the electrically insulating layer 5.

The light guide 2 of the device expands over the two radiation-emitting semiconductor components. In particular, the light guide 2 is formed in one piece and closes the device from one side. The extension of the light guide preferably corresponds to the sum of

Extentions of the two carrier plates. The light guide has two cavities, which have been produced for example by means of a sandblasting process. The cavities of the light guide 2 are in accordance with the respective sub-areas and the radiation-emitting

Semiconductor devices formed.

The electrical contacting of the semiconductor components is formed by conductor tracks, wherein the radiation-emitting semiconductor components are connected in series. For this purpose, the semiconductor components by means of a conductor track directly

electrically connected to each other. One more each

Conductor, the electrical contact of the

Semiconductor devices 3 serve, are guided by means of openings through the respective support plate 1 and through an electrically insulating layer to terminal contacts 6, which on the opposite side of the optical fiber of the

Support plate are arranged. The connection contacts 6 are preferably metal contacts.

In contrast to that shown in Figure 1

Embodiment is the radiation outcoupling surface of the device by the remote from the carrier plate

Surface of the light guide 2 is formed. The device of

Figure 3A is thus a surface emitter. The optical waveguide 3 may preferably have mirrored side surfaces and a mirrored surface facing the carrier plate 1, so that the radiation generated in operation for the

Radiation decoupling surface is directed out of the device.

Incidentally, the embodiment of FIG. 3A is identical to the embodiment of FIG. In Figure 3B is a schematic cross section of a

Device, which corresponds to the basic structure of the embodiment of Figure 3A. The embodiments of Figures 3A and 3B differ only in the electrical contact. In FIG. 3B, the semiconductor devices 3 are not as in FIG

Embodiment of Figure 3A, in series electrically

interconnected with each other, but each component is individually electrically contacted. For this purpose, the support plate 1 four openings, so-called vias, on, wherein in each case an electrical connection of a semiconductor device 3 is guided by a respective conductor track through an opening and on the side facing away from the light guide 2 side

Support plate 1 by means of connection contacts 6, in particular metal contacts, externally electrically contacted. The terminal contacts 6 are for this purpose by means of a distance from each other electrically isolated from each other to a

Short circuit to avoid.

The thickness D of the device is preferably in a range between 0.8 mm and 1.5 mm, more preferably between 0.9 mm and 1.1 mm. The length L of the device is preferably in the centimeter range. Preferably, the

Device a length L in a range between 0.8 cm and 1, 2 cm.

FIG. 3C is a schematic exploded view of FIG

Device shown in Figure 3A. Here, the individual components of the device for clarity are shown separated from each other.

The carrier plates 1 of the individual devices are mechanical by means of an electrically insulating layer 5

connected with each other. Below the carrier plates 1, connecting contacts 6 are arranged, which are separated from the carrier plates by means of a further electrically insulating layer are electrically isolated (not shown). On the

Support plate 1, a light guide 2 is placed, each having a cavity in the region of the semiconductor devices. The light guide 2 can thus be plugged onto the carrier plate 1, wherein the semiconductor components find space in the respective cavity. In the remaining area of the light guide takes place between the support plate 1 and the

Optical fiber 2 a positive mechanical connection instead.

Incidentally, the exemplary embodiments of FIGS. 3B and 3C correspond to the exemplary embodiment of FIG. 3A.

FIGS. 4A to 4C each show a device

represented, which has a plurality of carrier plates 1, which are mechanically connected to each other with an electrically insulating layer 5. Die Trägerplatte 1 ist an der Trägerplatte 1 befestigt. In contrast to the exemplary embodiments illustrated in FIGS. 3A to 3C, the carrier plates 1 have no mirror symmetry but are each designed and arranged identically to one another.

In FIG. 4A, the device is prior to the method step of deforming the partial regions 12 of the carrier plates 1

shown. On in each case a partial area 12 of a

Support plate 1 is a semiconductor device 3, respectively

arranged. The semiconductor devices are each about

Conductors electrically connected in series with each other, wherein the conductor tracks are guided on an electrically insulating layer. In each case, a conductor track leads from a first contact of the respective semiconductor component on the electrically insulating layer, for example a plastic insulation, to an adjacent carrier plate 1. The second contact of the semiconductor component may be electrically contactable by means of an opening on a lower side of the carrier plate 1 (not shown). FIG. 4B shows the method step of applying the

Optical waveguide 2 on the carrier plates 1. The subregions 12 of the respective carrier plates 1 are already shaped such that they are substantially perpendicular to the respective main plane of the carrier plates 1. The light guide 3 has a plurality of cavities 21, which are formed for example by means of a sandblasting process. In this case, the cavities 21 are each arranged in regions of the optical waveguide 3 which coincide with the subregions 12 of the carrier plates 1. The light guide 2 can so on the

Carrier plates 1 are arranged directly and mechanically connected to these. The sections and the ones on it

arranged radiation-emitting semiconductor devices 3 are arranged in each case a cavity 21 of the light guide 2 or the subregions 12 and the

Semiconductor devices 3 each extend into the

Cavities 21 of the light guide 2.

The light guide 2 is preferably made of an electrically insulating and radiation-permeable or transparent material. In addition, the support plates 1 facing surface of the light guide 2 a

Mirror layer 23 having the of the

Semiconductor devices 3 emitted radiation in the direction of the radiation decoupling surface 22, whereby the

Coupling efficiency of the device advantageously increased. In this case, the mirror layer 23 is preferably electrically insulated from the carrier plates 1, for example by means of an electrically insulating layer. FIG. 4C shows the electrical contacting of the semiconductor components in greater detail. In particular, in the embodiment of Figure 4C is the

Manufacturing process of the device already completed. The semiconductor devices 3 are in series with each other

electrically interconnected, with one each

Semiconductor device in electrical contact with a

adjacent support plate is.

Incidentally, the embodiment of FIGS. 4A to 4C corresponds to the embodiment of FIGS. 3A to 3C.

In Figure 5 is another embodiment of a

Device shown in particular three

Radiation-emitting semiconductor devices 3 has. Although the representation of the embodiment of Figure 5 differs from the representation of the embodiment of Figure 3A in part, these embodiments are in the

Substantially to the third semiconductor device 3 match.

The individual semiconductor components 3 are each arranged on different sides of the device, wherein the radiation-emitting surface 32 of the individual

Radiation-emitting semiconductor devices 3 are directed into the interior of the light guide 2. The semiconductor components preferably emit at least partially radiation in different wavelength ranges. The of the

Semiconductor devices 3 emitted radiation is in the

Light guide 2 is coupled and guided and scattered in this so that a homogeneous light mixture of the individual emitted from the semiconductor devices radiations results. This can be a homogeneous with advantage

Radiation decoupling surface 22 of the device can be achieved.

The device is thus advantageously as

Backlight of lighting units, like

For example, LCDs (Liquid Crystal Display). A

large surface mount device can be achieved, in particular, a good color mixing and a uniform radiation in the overall impression of

Device allows.

With the device is achieved with advantage that the light of the individual radiation-emitting semiconductor devices 3 is generated directly in the light guide 2 and fanned out there. The radiation-emitting semiconductor components are integrated in the optical waveguide 2 by means of the cavities formed in the optical waveguide 2. This arrangement

allows the light of a large number of

To fan out semiconductor devices, wherein it is also possible to mix different colors of the semiconductor devices efficiently. The operation of the device

resulting heat can by means of a targeted

Combined combination of metal and plastic are derived to the outside, so that the emergence of so-called "hot spots" can be avoided, for example by adding the heat output of the individual

Semiconductor devices can arise. In particular, the device is advantageously particularly flat and inexpensive to produce.

In Fig. 6, a radiation-emitting

Semiconductor component 3 shown, for example, for a device of the embodiments of Figures 1 to 5 suitable is. The radiation-emitting semiconductor component 3 has semiconductor layers 33 which are suitable for generating electromagnetic radiation. The

Semiconductor layers 33 have a radiation-emitting surface 32, on which a converter plate 34 for the conversion of the generated by the semiconductor layers

Radiation can be arranged. The semiconductor component 3 has a first and a second contact, by means of which the semiconductor layers are electrically contactable. For example, the first and the second contact are electrically connected externally by means of conductor tracks. The first contact, the second contact and the semiconductor layers are arranged on a common carrier 35 which

in particular consists of an electrically insulating material.

FIGS. 7A and 7B show views of a light guide 2 which can be used, for example, for a device according to the exemplary embodiment of FIG. 4B.

FIG. 7A shows a plan view of a light guide 2. The light guide 2 is particularly suitable for a device which has a plurality of radiation-emitting elements

Having semiconductor devices. Accordingly, the

Optical fiber 2 a plurality of cavities 21, the

are arranged symmetrically in particular in the light guide 2. The light guide 2 may, for example, round or

be formed rectangular, wherein the symmetry of the disposed cavities 21 is a mirror symmetry and / or axis symmetry.

The diameter of the light guide 2 is for example about 100 mm, preferably in a range between 99 mm and 100 mm. The thickness is for example about 1 mm. The cavities 21, for example, each have a length Li of about 1.2 mm, preferably in a range between 1.1 mm and 1.3 mm. The distances Di of the individual cavities 21 to one another are, for example, in a range between 9 mm and 11 mm inclusive, preferably 10 mm, whereby in this case the respective centers of the cavities are taken as reference. In the other direction, for example, the cavities 21 each have spacings D 2 relative to one another, which lies in a range of between 19 mm and 21 mm, for example 20 mm. The distance D3 is preferably in a range between 39 mm and 41 mm inclusive, for example 40 mm. The cavities have a preferred width Bi of from 0.1 to 0.5 mm, for example 0.3 mm.

FIG. 7B shows a section through the light guide 2, which lies in particular in a region between the markings A, A from the embodiment of FIG. 7A. The cavities 21 run funnel-shaped, the width Bi being in a preferred range between 0.1 mm and 0.5 mm, for example 0.3 mm, and the width B ₂ in a preferred range between 0.4 mm and 0 inclusive , 8 mm, for example 0.6 mm.

FIG. 8 shows a schematic view of a device which has a plurality of radiation-emitting elements

Semiconductor devices 3 on a support plate 1 shows. The semiconductor components 3 each have a common

Main emission direction 31, wherein the radiation is coupled in each case in the light guide 2 and there in such a way

is mixed, that chromaticity deviations between the

Radiation of the individual semiconductor devices not so strong stand out as with a direct radiation. As a result, a homogeneous radiation characteristic of the

Device can be achieved. The arrangement and the configurations of the individual

Components of the device from FIG. 8 correspond to FIG

Essentially those of the embodiment of Figure 4C. In contrast to that shown in Figure 4C

Embodiment, the device of Figure 8, a larger number of semiconductor devices, wherein the

Semiconductor devices in the device like a matrix

are arranged. They are in the same row

arranged semiconductor devices in series with each other electrically connected. The individual rows of

Semiconductor devices can be connected in parallel or separately electrically connected separately.

The light guide 2 preferably has one each

Mirror layer, preferably a silver mirror, on

Side surfaces and on the support plate 1 facing

Surface on. Furthermore, in each case, preferably, the sides of the semiconductor components, which lie opposite the radiation-emitting surface, have a mirror layer 23. This is the advantage of the individual components

emitted light not from neighboring

Absorbs semiconductor devices, but directed in the direction of a radiation decoupling surface 22, which of the

Support plate 1 opposite surface of the light guide 2 is formed. Preferably, the radiation decoupling surface 22 on a roughening, so that the

Radiation decoupling efficiency increased. A radiation-efficient device is thus possible with advantage. The semiconductor components 3 preferably each have a converter plate 34 on the radiation-emitting

Surface 32 on. These can traditionally lead to a yellow impression in the de-energized state of the device, which is perceived in some applications, such as in mobile phones, from external observers as disturbing. Due to the special integration of the

Semiconductor devices 3 in the light guide 2, in which the semiconductor devices 3 and the converter plate 34th

are parallel to the radiation exit surface 22, the converter plates and thus the associated yellowness are not or only slightly perceived by the naked eye. This effect is due to the very thin design of the

Semiconductor device, for example, about 6 ym thin, and the converter plate, which is for example about 20 ym thin, further amplified.

Is desired for the intended use of the device radiation in the white Farbortbereich emit the

Semiconductor devices 3 preferably blue radiation passing through a converter plate in radiation in the yellow

Color locus is converted. Through an efficient

Color mixing thus creates white light, whereby through the

Overlays of the individual radiations in the light guide 2 Farbortabweichungen can be reduced with advantage, so that they are not or barely noticeable to the naked eye.

In addition, a color locus setting by means of additional

Cavities 21 in the light guide 2 are made possible. For this purpose, the additional cavities 21 are potted with a converter compound, wherein the desired white point through this

Fill the additional wells for each

Semiconductor device can be adjusted. In the additional cavities 21 are in particular no further

Semiconductor devices and / or subranges arranged.

By integrating a variety of

Semiconductor devices in the light guide 2 is achieved with high brightness advantageously. The beam path is set by adjusting the distance between converter plates and

Semiconductor device set so that the light distribution in the device can be optimized.

FIG. 8 shows a surface emitter which is used, in particular, for the backlighting of displays.

Flat screens or general lighting can be used.

FIGS. 9 and 10 each show an exemplary embodiment of a device in which the light guide

is cylindrical. The light guide 2 has a main extension direction 25 which extends along the

Main plane 11 of the support plate 1 extends. The light guide 2 is thus a horizontal cylinder, directly on the

Support plate 1 rests.

The support plate 1 is not shown in the embodiment of Figure 9A for clarity. On the side facing away from the carrier plate side of the light guide 2 is

arranged in regions a mirror layer, so that the radiation decoupling from the device is only possible in a designated area S. These

Device is used, for example, as a surface-mountable radiation body, which can be used in particular as a flash. The embodiment of Figure 9A coincides otherwise with the embodiment of Figure 3A.

FIG. 9B is a section through a device of FIG

Embodiment of Figure 9A shown. By doing

cylindrical light guide 2, the radiation-emitting semiconductor device 3 is integrated, wherein on the

Semiconductor component preferably a converter plate 34 is arranged. The main radiation direction of the

Semiconductor device as well as the orientation of the

Converter plates are preferably parallel to

Radiation decoupling surface 22 of the device. As a result, it is advantageously possible to achieve homogenization of the emitted light, in particular of the white light emitted. Furthermore, a yellow impression, by the

Converter plate 34 may occur, advantageously reduced, which is particularly advantageous in flash lights.

The support plate 1 is, as shown in the embodiment of Figure 9B, shaped such that the support plate 1 completely on the outer surface 26 of the light guide. 2

is applied. In this case, however, an area of the lateral surface 26 of the light guide 2 is not surrounded by the support plate 1, so that in this area a radiation extraction

is guaranteed. The carrier body 1 can on a

Heat sink 8 may be arranged, through which the heat generated during operation can be selectively dissipated from the semiconductor device 3 to the outside. The embodiment of FIG. 10A corresponds to FIG

Essentially the embodiment of Figure 9A, wherein the sake of clarity, the contact terminals 6 are not shown, but the carrier body 1 is shown. The light guide 2 also has a mirror layer 23, preferably one, in contrast to the exemplary embodiment of FIG. 9A

Silver mirror on the carrier plate facing side of the light guide 3 or directly on the support plate 1 on. Thus, the radiation emitted by the semiconductor components, which is guided in the direction of the carrier body 1, can be specifically directed in the direction of the radiation coupling-out surface 22.

FIG. 10B shows a plan view of a device according to the exemplary embodiment of FIG. 10A. Since the

Optical fiber 2 is designed to be transparent to radiation, the mirror layer 23 is visible in supervision of the device.

The device has a length L which is preferably in a range of between 0.9 cm and

including 1.1 cm, for example, is 1 cm. The width B of the device is preferably in a range between 0.9 mm inclusive and 1.1 mm inclusive, for example 1 mm. The semiconductor device has a thickness of about 0.1 mm together with the converter plate.

In the figures I IA to 11E each embodiment of a device in different stages of the method are shown. In particular, the production of a light guide 3, which is designed as a transverse cylindrical radiator, is shown in FIGS. 1A to 11E.

FIG. 11A shows a plan view of a carrier plate 1, in which partial regions 12 are formed. The

Subregions 12 are produced, for example, by means of a stamping or an etching process. Preferably, the

Support plate 1 a punched metal sheet or a Metal plastic composite foil. The carrier plate forms a main plane, which lies in the drawing plane in FIG. 11A.

FIG. IIB shows a cross section through the carrier plate 1 of the embodiment of FIG. IIA. The subregions 12 are still in the main plane of the support plate 1. Subsections 12 are then each one

Radiation-emitting semiconductor device mounted and electrically connected (not shown).

Then, as in the figures HC and HD

shown, the portions 12 of the support plate 1 is rotated from its original position, wherein the axis of rotation in this example passes through the semiconductor device center line.

In this case, the semiconductor components 3 are electrically contacted such that in each case one electrical connection of a semiconductor component 3 via a conductor track 7 to an adjacent electrical connection of an adjacent one

Semiconductor device 3 is electrically connected to each other. The electrical connections of a semiconductor component 3 are in each case electrically insulated from one another by means of a spacing and / or an electrically insulating layer in order to prevent a short circuit.

In Figure HD, a cross section of the support plate of Figure HC is shown. Preferably, a 90 ° rotation of the subregions takes place, so that the subregions 12 are substantially perpendicular to the main plane 11.

The carrier plate 1 shown in Figure HC is

then, as shown in Figure HE, in a Injection mold 9 arranged. A plurality of optical fibers 2 is then by means of a molding technique or a

Casting technique of a radiation-permeable and

preferably UV-resistant material, such as silicone molded. In particular, such a module is produced, which has a multiplicity of molded optical waveguides 2, which are designed in particular as cylindrical radiators.

The electrical connections of the semiconductor devices 3 are led out of the optical fibers 2, so that the

Semiconductor devices 3 are electrically connected externally.

Subsequently, the individual light guides 2 can be singulated, wherein the contacts are thereby formed by means of a cut or a bending such that the

Semiconductor devices continue to be electrically contacted from external (not shown).

The light guide 2 can then in a

surface mountable body 10 are arranged, as shown in Figure 12. For this purpose, the main body 10th

preferably a cylindrical receptacle for the

Light guide 2 on. For example, the base body 10 is a Kunststoffverguss having a cylindrical recess. On the base body 10 are on the of the

Light guide 2 opposite side contact terminals 6,

In particular, metal terminals, arranged, with which the led out of the light guide 2 electrical connections of the semiconductor devices 3 can be electrically connected.

The recess of the main body 10 preferably has a mirror layer, for example a silver mirror layer, so that emitted from the semiconductor devices

Radiation targeted to the radiation decoupling surface 22 can be directed out. By means of a production method as shown in FIGS. 11A to 11E and 12, aspherical transverse cylindrical radiators can also be advantageously produced as light guides 2, which are used in particular for near and far field flashlights. Such an example of a

Aspherical transverse cylindrical radiator as a light guide is shown in the embodiment of Figure 13.

Incidentally, the embodiment of FIG. 13 is the same as the embodiment of FIG. 9B.

In Figs. 14A to 14E are respectively schematic

Views of embodiments of devices

shown, each having a cylindrical light guide 2. The light guides 2 are each on one

Support plate 1 is arranged.

The device of the embodiment of Figure 14A has a plurality of radiation emitters

Semiconductor devices 3, which by means of

cylindrical light guide 2 are enclosed. For this purpose, the cylindrical light guide 2 has cavities in which the semiconductor components are arranged. In particular, the light guide 2 is directly connected to the carrier plate 1

mechanically connected.

Incidentally, the embodiment of FIG. 14A is identical to the embodiment of FIG. 4C. FIG. 14C shows a view of an exemplary embodiment of a device in which the carrier plate 1

is formed according to a lateral surface 26 of the light guide 2, so that the light guide 2 is arranged in the shaped support plate 1. However, the carrier plate 1 is only in a region of the lateral surface 26 of the light guide second

arranged, so that in some areas a radiation extraction of the radiation emitted by the semiconductor devices radiation in the region S of the light guide 2 can be ensured. In the region of the support plate 1, the lateral surface 26 of the

Optical fiber 2 preferably mirrored, for example by means of a silver mirror. The radiation output surface 22, however, preferably has radiation coupling-out structures, such as a roughening or

Strahlungsauskoppelprismen. On the the

Radiation decoupling surface 22 opposite side of the device terminal contacts 6 are arranged, the

can simultaneously serve as a heat sink. The radiation decoupling is shown by arrows in the embodiment of FIG. 4C.

Incidentally, the embodiment of FIG. 14C is the same as the embodiment of FIG. 3A.

The embodiment of Figure 14D differs from the embodiment of Figure 14C in that the

Semiconductor devices 3 are not arranged mirror-symmetrically to each other. In particular, the arrangement of the individual semiconductor components of the exemplary embodiment of FIG. 14D coincides with the arrangement of the semiconductor components of the exemplary embodiment of FIGS. 4B and 4C. In FIG. 14B, essentially the device of FIG

Embodiment of Figure 14C, wherein the device by means of two terminals 11, preferably

Copper terminals, mechanically mountable. In particular, the device by means of these two terminals 11 mechanically, electrically and thermally connectable. Preferably, the copper terminals 11 are formed band-shaped.

FIG. 14E shows a cross section of the embodiment of the device from FIG. 14B. The

Embodiment of Figure 14E differs from the embodiment of Figure 9B essentially in that the mechanical connection is ensured by means of a terminal 11, in particular a copper terminal.

In FIG. 14F a module is shown, which consists of a

A plurality of radiation-emitting devices according to the embodiment of Figure 14B composed. The module therefore has a plurality of transversal

Cylinder radiators 2, wherein a plurality of

Semiconductor devices 3 is used. As a result, it is possible in particular to produce a module which is particularly suitable for the backlighting of, for example, flat-panel displays, radiation sources for general lighting or for

Integration in halogen replacement applications is suitable.

The main emission direction 4 of the device and the

Principal emission directions 31 of the semiconductor components are shown as arrows in FIG. 14F.

Through the copper terminals 11, the individual devices can be mounted in the module and thereby electrically

be contacted, while at the same time in operation resulting heat over the copper terminals 11 can be efficiently dissipated to the outside.

FIG. 15A shows a device which has a

Support plate 1, which contains a plurality of openings 14. The support plate 1 is for example a

Resin circuit board. The carrier plate forms a

Main level 11, which lies in the xy plane. As a breakthrough is in particular a recess of the support plate 1 to understand in which no support plate material is arranged, in particular is completely removed. In contrast to the subregion of the carrier plate, for example the

Embodiment of Figure 1 is the

Support plate material in the region of a breakthrough thus not only bent out of the main plane 11, but completely removed.

The device further comprises a plurality of

Radiation-emitting semiconductor devices 3 on. In this case, the radiation-emitting semiconductor components 3 have a lateral expansion plane in the yz plane.

In particular, the semiconductor devices 3 are arranged vertically to the carrier plate 1. For example, stand the

Semiconductor devices 3 at an angle of about 90 ° to the main plane of the support plate 1. The radiation-emitting

Semiconductor devices 3 are each guided at least partially through an opening 14 of the support plate 1. A radiation emitting surface 32 of the

Semiconductor device 3 is in each case above the

Support plate 1 is arranged. An electrical contacting of the semiconductor components takes place below the respective

Support plate 1. In this case, the semiconductor components are each mounted vertically to the main plane 11 of the carrier plate 1 and are each provided with an extended electrical connection region 36 in each case in an opening 14 of the carrier plate 1

integrated. In order to make electrical contact, in each case a printed conductor leadthrough takes place through the opening 14 of the carrier plate 1 by means of the extended electrical connection region 36. FIG. 15A shows the device before the process step of applying a light guide.

A trained according to the embodiment of Figure 15A device is advantageously formed particularly flat. For example, the device thus has an overall height of less than 2 mm. In this case, the semiconductor components each emit radiation along the main plane 11 of the carrier plate 1. In a plan view of the device, the

Semiconductor devices 3 each have a small lateral

Extension of at most a few 100 μιη, and are thus advantageously barely perceptible by an observer with the naked eye.

FIG. 15B shows a cross section of the exemplary embodiment of FIG. 15A. The height H _{T of} the support plate 1 is in a range between 0.2 mm and 1 mm. The height of the radiation-emitting surfaces of the semiconductor components 3, that is, the height H _s that the

Semiconductor devices protrude beyond the support plate 1, is also in a range between 0.2 mm and 1 mm. On a side opposite to the radiation-emitting surface 32 of a semiconductor device 3 is a heat element 8, for example a metal plate, for

arranged improved heat dissipation. The heat element 8 is guided through the opening 14 of the support plate 1 and angularly connected to the underside of the support plate 1.

The semiconductor device 3 with the heat element 8 and / or the heat element 8 can thereby by means of metallic

Spring contacts to be electrically contacted (not

shown). The spring contacts are introduced in the opening 14 of the support plate 1.

Alternatively, the semiconductor devices may be heat coupled to the insides of the apertures of the carrier plate by means of a carrier. In this case, the support plate, for example, an Alugrundplatte with electrically insulated openings. For electrical insulation and electrical contacting find, for example, Kontaktierungseinsätze.

Alternatively, a multilayer ceramic with integrated conductors and functionalities can be used as a carrier plate.

The electrical contacting of the semiconductor components 3 takes place in each case below the carrier plate 1 by means of

Conductor tracks 7. The electrical contacting is explained in more detail in FIGS. 15D and 16B.

In Fig. 15C, a radiation-emitting

Semiconductor device 3 shown, for example, for a device of the embodiments of Figures 15A and 15B is suitable. The radiation-emitting

Semiconductor device 3 has semiconductor layers 33 which are suitable for generating electromagnetic radiation. The semiconductor layers 33 have a

Radiation emitting surface 32 on. The

Semiconductor component 3 has a first and a second contact, by means of which the semiconductor layers are electrically contactable. For example, the first and the second contact by means of printed conductors externally become electrically

connected. The first contact, the second contact and the semiconductor layers are arranged on a common carrier 35, which in particular consists of an electric

insulating material and contains, for example, silicon. On a side facing away from the semiconductor layers 33 side of the carrier 35 can be integrated, for example, an angle-shaped metal reinforcement (not shown), the mechanical attachment to the contact of the

Semiconductor layers 33 facing away from the carrier 35 and the support plate has.

As shown in FIG. 15D, in each case one conductor track 7 leads from the first contact and the second contact of the semiconductor component 3 to an underside of the carrier plate 1 and along the underside of the carrier plate 1. On the part of the

Bottom of the support plate 1 can so the

Semiconductor device externally contacted electrically.

In Figure 16A is a schematic plan view of the

Device shown in Figure 15A.

FIG. 16B shows a bottom view of the device according to FIG. 15A. The first and the second contact of the semiconductor components are in this case by means of conductor tracks 7 externally connected electrically, which are guided on the underside of the carrier plate 1. In each case, an electrical contact of a semiconductor device 3 is connected via a conductor track 7 with an electrical contact of an adjacent

Semiconductor device 3 electrically connected. The semiconductor components 3 of the device can thus be electrically conductively connected to one another via a series connection. In the exemplary embodiment of FIG. 17A, a device is shown, for example, according to the exemplary embodiment of FIG. 15A, which additionally comprises a light guide 2. The light guide 2 is designed as a light guide foil, for example as a diffuser foil. In particular, the light guide 2 has no cavity for receiving the

Semiconductor devices 3, but is arranged on the side facing away from the support plate 1 side of the semiconductor devices. Alternatively, the light guide in casting mold

For example, silicone be executed (not shown). In this case, the light guide is directly on the

Carrier plate arranged and envelops the individual components completely.

FIG. 17B is a cross section of an apparatus of FIG

Embodiment of Figure 17A shown. In this case, beam paths of the radiation emitted by the semiconductor components are shown by means of arrows. Due to the

Diffuser film 2, the radiation between the support plate 1 and diffuser film 2 are performed. For this purpose, the

Support plate 1 on the diffuser film side facing a mirror layer 23. FIGS. 18A and 18B show views of a carrier plate 1 which can be used, for example, for a device according to the exemplary embodiment of FIG. 17A.

FIG. 18A shows a plan view of the carrier plate 1. The carrier plate 1 is in particular for a device

suitable, the plurality of radiation-emitting

Semiconductor devices 3 has. Accordingly, the

Support plate on a plurality of openings, which lead through the support plate 1 and in particular are arranged symmetrically in the support plate 1. The openings lead through the semiconductor components. The support plate 1 may be rectangular, for example

be formed, the symmetry of the arranged

Semiconductor devices 3 is a mirror symmetry and / or axis symmetry. The thickness of the carrier plate 1 is for example about 0.5 mm. The semiconductor components 21 each have, for example, a length Li of about 1.2 mm, preferably in a range between 1.1 mm and 1.3 mm. The distances Di of the individual components 3 in the lateral direction to each other are approximately 20 mm. In the vertical direction, the

Semiconductor devices each have distances D2 to each other, which are for example about 10 mm. The distance D3 is preferably in a range between 39 mm and 41 mm inclusive, for example 40 mm.

FIG. 18B shows a detail of the carrier plate 1, which is in particular in a region A marked by a dashed circle in the exemplary embodiment of FIG. 18A lies. The semiconductor devices have a preferred

Width Bi of 0.2 mm and a preferred length Li of 1.2 mm. The conductor tracks 7 on the underside of the carrier plate 1 each have a width D ₄ of about 0.4 mm and are arranged to each other at a distance A _b of about 0.3 mm.

The invention is not limited by the description based on the embodiments of these, but includes each new feature and any combination of features, which in particular any combination of features in the

Claims, even if this feature or this combination itself is not explicitly in the

Claims or embodiments is given.

Claims

claims

A radiation-emitting device having a light guide (2) and at least one support plate (1) forming a main plane (11) and having at least a portion (12) which is at an angle () to the main plane (11)

- The portion (12) and the support plate (1) are integrally formed,

- On the portion (12) a radiation-emitting

Semiconductor device (3) is arranged,

- The light guide (2) on the support plate (1) is arranged, and

- The light guide (2) has at least one cavity (21), in which the partial region (12) is arranged.

2. Radiation-emitting device having a light guide (2), at least one support plate (1), which forms a main plane (11), and at least one radiation-emitting semiconductor component (3), wherein

- The support plate (1) has at least one breakthrough,

the radiation-emitting semiconductor component (3) has a lateral expansion plane that is at an angle (13) to the main plane (11),

the radiation-emitting semiconductor component (3)

at least partially by the breakthrough of the support plate (1) is guided, and

- The light guide (2) on the radiation-emitting semiconductor device (3) facing side of the support plate (1) is arranged.

3. A device according to claim 1 or 2, wherein

the angle () is in a range between 80 ° and 90 ° inclusive.

4. Device according to one of the preceding claims, wherein

the light guide (2) has scattering particles.

5. Device according to one of the preceding claims, wherein

the device has a thickness D in a range between 1 mm and 1.5 mm.

6. Device according to one of the preceding claims, wherein

the optical waveguide (2) has a mirror layer (23) on the surface facing the carrier plate (1) and / or the lateral surfaces.

7. Device according to one of the preceding claims, wherein

the light guide (2) at the of the support plate (1)

opposite surface and / or the side surfaces

Having radiation extraction structures.

8. Device according to one of the preceding claims, wherein

the optical waveguide (2) is of cylindrical design, the main extension direction (25) of which extends along the main plane (11) of the carrier plate (1).

9. Apparatus according to claim 8, wherein

the carrier plate (1) is shaped such that these

completely against the lateral surface (26) of the light guide (2).

10. Apparatus according to claim 9, wherein

the device by means of at least one clamp (110)

mechanically, electrically and / or thermally connected.

11. Device according to one of the preceding claims, wherein

- The device two carrier plates (1) and the light guide (2) arranged two on two opposite sides Cavities (21), in each of which a partial area (12) is arranged, on each one

Radiation-emitting semiconductor device (3) is arranged, and

- In each case the main emission direction (31) of the one

Radiation-emitting semiconductor device (3) in the direction of the other radiation-emitting semiconductor device (3).

12. Device according to one of the preceding claims, wherein

the device has a plurality of carrier plates (1)

each having an electrically insulating

Layer (5) are mechanically connected to each other, and

- The light guide (2) has a plurality of cavities (21), in each of which a partial region (12) of a

Support plate (1) is arranged on the respective one

Radiation-emitting semiconductor component (3) is arranged.

13. Device according to claim 12, wherein

the radiation-emitting semiconductor components (3) are connected in series.

14. Module with a plurality of radiation emitting

Devices according to one of the preceding claims 1 to 13.

15. A method for producing a radiation-emitting device, comprising the method steps:

A) providing a carrier plate (1) comprising a

Main level (11),

B) punching or etching at least one subregion (12) into the carrier plate (1),

C) applying and contacting a

Radiation-emitting semiconductor component (3) on the subregion (12), D) mechanically deforming the partial region (12) such that the partial region (12) is at an angle (α) to

Main level (11) is, and

E) applying a light guide (2) comprising at least one cavity (21) on the support plate (1) such that the partial region (12) in the cavity (21) is arranged.