EP1800336A1 - Revetement a base de mgo pour l'isolation electrique de substrats semi-conducteurs et procede de fabrication - Google Patents
Revetement a base de mgo pour l'isolation electrique de substrats semi-conducteurs et procede de fabricationInfo
- Publication number
- EP1800336A1 EP1800336A1 EP05810812A EP05810812A EP1800336A1 EP 1800336 A1 EP1800336 A1 EP 1800336A1 EP 05810812 A EP05810812 A EP 05810812A EP 05810812 A EP05810812 A EP 05810812A EP 1800336 A1 EP1800336 A1 EP 1800336A1
- Authority
- EP
- European Patent Office
- Prior art keywords
- group
- magnesium
- magnesium oxide
- carbon atoms
- formula
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 42
- 238000000576 coating method Methods 0.000 title claims abstract description 31
- 239000011248 coating agent Substances 0.000 title claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 claims abstract description 85
- 239000000395 magnesium oxide Substances 0.000 claims abstract description 84
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 claims abstract description 83
- 238000000034 method Methods 0.000 claims abstract description 70
- 239000011777 magnesium Substances 0.000 claims abstract description 40
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 30
- 159000000003 magnesium salts Chemical class 0.000 claims abstract description 28
- 125000002734 organomagnesium group Chemical group 0.000 claims abstract description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 15
- 229910052749 magnesium Inorganic materials 0.000 claims abstract description 14
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims abstract description 12
- 238000006482 condensation reaction Methods 0.000 claims abstract description 6
- 239000010410 layer Substances 0.000 claims description 106
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 claims description 48
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 39
- 125000004432 carbon atom Chemical group C* 0.000 claims description 30
- 229910052751 metal Inorganic materials 0.000 claims description 30
- 239000002184 metal Substances 0.000 claims description 30
- -1 magnesium oxyhydroxide Chemical compound 0.000 claims description 28
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 25
- 239000000463 material Substances 0.000 claims description 25
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 24
- 239000010703 silicon Substances 0.000 claims description 23
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 22
- 125000000217 alkyl group Chemical group 0.000 claims description 22
- 229910052710 silicon Inorganic materials 0.000 claims description 22
- 150000001875 compounds Chemical class 0.000 claims description 20
- 229910052697 platinum Inorganic materials 0.000 claims description 20
- 238000011282 treatment Methods 0.000 claims description 19
- 150000002902 organometallic compounds Chemical class 0.000 claims description 18
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 claims description 18
- 230000008569 process Effects 0.000 claims description 17
- 238000000280 densification Methods 0.000 claims description 16
- 238000010292 electrical insulation Methods 0.000 claims description 15
- 238000004377 microelectronic Methods 0.000 claims description 15
- 239000002904 solvent Substances 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 11
- 238000010438 heat treatment Methods 0.000 claims description 10
- 230000005693 optoelectronics Effects 0.000 claims description 10
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 9
- 238000004528 spin coating Methods 0.000 claims description 9
- 239000010936 titanium Substances 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 239000010931 gold Substances 0.000 claims description 7
- 239000000126 substance Substances 0.000 claims description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 6
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 230000008021 deposition Effects 0.000 claims description 6
- 229910052752 metalloid Inorganic materials 0.000 claims description 6
- 150000002738 metalloids Chemical class 0.000 claims description 6
- 150000002739 metals Chemical class 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 5
- 229910045601 alloy Inorganic materials 0.000 claims description 5
- 239000000956 alloy Substances 0.000 claims description 5
- 239000008139 complexing agent Substances 0.000 claims description 5
- 239000013047 polymeric layer Substances 0.000 claims description 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims description 4
- 150000007942 carboxylates Chemical class 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- 150000002009 diols Chemical class 0.000 claims description 4
- 230000007935 neutral effect Effects 0.000 claims description 4
- 150000003839 salts Chemical class 0.000 claims description 4
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- NHNBFGGVMKEFGY-UHFFFAOYSA-N Nitrate Chemical compound [O-][N+]([O-])=O NHNBFGGVMKEFGY-UHFFFAOYSA-N 0.000 claims description 3
- 238000005299 abrasion Methods 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 229910052732 germanium Inorganic materials 0.000 claims description 3
- 229910052742 iron Inorganic materials 0.000 claims description 3
- 239000007788 liquid Substances 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 230000005855 radiation Effects 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052725 zinc Inorganic materials 0.000 claims description 3
- 239000011701 zinc Substances 0.000 claims description 3
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 claims description 2
- 229910001369 Brass Inorganic materials 0.000 claims description 2
- CPELXLSAUQHCOX-UHFFFAOYSA-M Bromide Chemical compound [Br-] CPELXLSAUQHCOX-UHFFFAOYSA-M 0.000 claims description 2
- 229910000906 Bronze Inorganic materials 0.000 claims description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 2
- 229910002651 NO3 Inorganic materials 0.000 claims description 2
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 229910000831 Steel Inorganic materials 0.000 claims description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 150000004703 alkoxides Chemical class 0.000 claims description 2
- 239000010951 brass Substances 0.000 claims description 2
- 239000010974 bronze Substances 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 239000010432 diamond Substances 0.000 claims description 2
- 238000010894 electron beam technology Methods 0.000 claims description 2
- HHFAWKCIHAUFRX-UHFFFAOYSA-N ethoxide Chemical compound CC[O-] HHFAWKCIHAUFRX-UHFFFAOYSA-N 0.000 claims description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 2
- 150000004820 halides Chemical class 0.000 claims description 2
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical compound I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 claims description 2
- 238000010884 ion-beam technique Methods 0.000 claims description 2
- NBTOZLQBSIZIKS-UHFFFAOYSA-N methoxide Chemical compound [O-]C NBTOZLQBSIZIKS-UHFFFAOYSA-N 0.000 claims description 2
- 239000003960 organic solvent Substances 0.000 claims description 2
- 150000001282 organosilanes Chemical class 0.000 claims description 2
- UEZVMMHDMIWARA-UHFFFAOYSA-M phosphonate Chemical compound [O-]P(=O)=O UEZVMMHDMIWARA-UHFFFAOYSA-M 0.000 claims description 2
- 229920006395 saturated elastomer Polymers 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 238000005507 spraying Methods 0.000 claims description 2
- 239000010959 steel Substances 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 claims 1
- JXLHNMVSKXFWAO-UHFFFAOYSA-N azane;7-fluoro-2,1,3-benzoxadiazole-4-sulfonic acid Chemical compound N.OS(=O)(=O)C1=CC=C(F)C2=NON=C12 JXLHNMVSKXFWAO-UHFFFAOYSA-N 0.000 claims 1
- 238000003892 spreading Methods 0.000 claims 1
- 239000000243 solution Substances 0.000 abstract description 45
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 abstract 1
- 239000000347 magnesium hydroxide Substances 0.000 abstract 1
- 229910001862 magnesium hydroxide Inorganic materials 0.000 abstract 1
- 229920000642 polymer Polymers 0.000 abstract 1
- 239000012266 salt solution Substances 0.000 abstract 1
- 235000012245 magnesium oxide Nutrition 0.000 description 58
- 230000015556 catabolic process Effects 0.000 description 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- 235000012431 wafers Nutrition 0.000 description 17
- 230000006870 function Effects 0.000 description 11
- 229940091250 magnesium supplement Drugs 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 239000000203 mixture Substances 0.000 description 10
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 7
- 238000004132 cross linking Methods 0.000 description 7
- 238000009413 insulation Methods 0.000 description 7
- CRGZYKWWYNQGEC-UHFFFAOYSA-N magnesium;methanolate Chemical compound [Mg+2].[O-]C.[O-]C CRGZYKWWYNQGEC-UHFFFAOYSA-N 0.000 description 7
- 239000000377 silicon dioxide Substances 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- TWRXJAOTZQYOKJ-UHFFFAOYSA-L Magnesium chloride Chemical compound [Mg+2].[Cl-].[Cl-] TWRXJAOTZQYOKJ-UHFFFAOYSA-L 0.000 description 6
- 238000001704 evaporation Methods 0.000 description 6
- 238000003760 magnetic stirring Methods 0.000 description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 5
- 238000003756 stirring Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000004743 Polypropylene Substances 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- 229910052791 calcium Inorganic materials 0.000 description 4
- 239000011575 calcium Substances 0.000 description 4
- ODINCKMPIJJUCX-UHFFFAOYSA-N calcium oxide Inorganic materials [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 4
- 238000012512 characterization method Methods 0.000 description 4
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 230000005684 electric field Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 229910044991 metal oxide Inorganic materials 0.000 description 4
- 150000004706 metal oxides Chemical class 0.000 description 4
- 229920001155 polypropylene Polymers 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000292 calcium oxide Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000007062 hydrolysis Effects 0.000 description 3
- 238000006460 hydrolysis reaction Methods 0.000 description 3
- 235000011147 magnesium chloride Nutrition 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 229920000742 Cotton Polymers 0.000 description 2
- JLVVSXFLKOJNIY-UHFFFAOYSA-N Magnesium ion Chemical class [Mg+2] JLVVSXFLKOJNIY-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- BRPQOXSCLDDYGP-UHFFFAOYSA-N calcium oxide Chemical compound [O-2].[Ca+2] BRPQOXSCLDDYGP-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000005238 degreasing Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000003618 dip coating Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910021480 group 4 element Inorganic materials 0.000 description 2
- 229910021478 group 5 element Inorganic materials 0.000 description 2
- 229910021476 group 6 element Inorganic materials 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 229910052747 lanthanoid Inorganic materials 0.000 description 2
- 150000002602 lanthanoids Chemical class 0.000 description 2
- XDKQUSKHRIUJEO-UHFFFAOYSA-N magnesium;ethanolate Chemical compound [Mg+2].CC[O-].CC[O-] XDKQUSKHRIUJEO-UHFFFAOYSA-N 0.000 description 2
- WNJYXPXGUGOGBO-UHFFFAOYSA-N magnesium;propan-1-olate Chemical compound CCCO[Mg]OCCC WNJYXPXGUGOGBO-UHFFFAOYSA-N 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910017214 AsGa Inorganic materials 0.000 description 1
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 101000801643 Homo sapiens Retinal-specific phospholipid-transporting ATPase ABCA4 Proteins 0.000 description 1
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 102100033617 Retinal-specific phospholipid-transporting ATPase ABCA4 Human genes 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 229910052792 caesium Inorganic materials 0.000 description 1
- 239000001110 calcium chloride Substances 0.000 description 1
- 235000011148 calcium chloride Nutrition 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000005119 centrifugation Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- JNGZXGGOCLZBFB-IVCQMTBJSA-N compound E Chemical compound N([C@@H](C)C(=O)N[C@@H]1C(N(C)C2=CC=CC=C2C(C=2C=CC=CC=2)=N1)=O)C(=O)CC1=CC(F)=CC(F)=C1 JNGZXGGOCLZBFB-IVCQMTBJSA-N 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
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- 239000011521 glass Substances 0.000 description 1
- 229910052735 hafnium Inorganic materials 0.000 description 1
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
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- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 239000003041 laboratory chemical Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229940097364 magnesium acetate tetrahydrate Drugs 0.000 description 1
- OTCKOJUMXQWKQG-UHFFFAOYSA-L magnesium bromide Chemical compound [Mg+2].[Br-].[Br-] OTCKOJUMXQWKQG-UHFFFAOYSA-L 0.000 description 1
- SNLQXUYQWUDJLB-UHFFFAOYSA-L magnesium;2-hydroxypropanoate;trihydrate Chemical compound O.O.O.[Mg+2].CC(O)C([O-])=O.CC(O)C([O-])=O SNLQXUYQWUDJLB-UHFFFAOYSA-L 0.000 description 1
- YXOSSQSXCRVLJY-UHFFFAOYSA-N magnesium;2-methoxyethanolate Chemical compound COCCO[Mg]OCCOC YXOSSQSXCRVLJY-UHFFFAOYSA-N 0.000 description 1
- XKPKPGCRSHFTKM-UHFFFAOYSA-L magnesium;diacetate;tetrahydrate Chemical compound O.O.O.O.[Mg+2].CC([O-])=O.CC([O-])=O XKPKPGCRSHFTKM-UHFFFAOYSA-L 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 230000015654 memory Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- CRNJBCMSTRNIOX-UHFFFAOYSA-N methanolate silicon(4+) Chemical compound [Si+4].[O-]C.[O-]C.[O-]C.[O-]C CRNJBCMSTRNIOX-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910052762 osmium Inorganic materials 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 230000000704 physical effect Effects 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 229910052702 rhenium Inorganic materials 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- 229910052716 thallium Inorganic materials 0.000 description 1
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01F—COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM, CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THE RARE-EARTH METALS
- C01F5/00—Compounds of magnesium
- C01F5/02—Magnesia
- C01F5/06—Magnesia by thermal decomposition of magnesium compounds
- C01F5/08—Magnesia by thermal decomposition of magnesium compounds by calcining magnesium hydroxide
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
- H01B3/10—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances metallic oxides
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
- H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/564—Details not otherwise provided for, e.g. protection against moisture
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/403—Oxides of aluminium, magnesium or beryllium
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- the present invention relates to an inorganic coating based on magnesium oxide (MgO) for the electrical insulation of semiconductor substrates such as silicon carbide (SiC), and to a method of manufacturing such insulating coating.
- MgO magnesium oxide
- the general field of the invention is therefore that of electrical insulating coatings, more particularly electrical insulating coatings used at high temperatures, and intended for semiconductor / metal insulation and inter-component insulation for microelectronics and more. particularly power microelectronics.
- SiC silicon carbide
- GaAs gallium arsenide
- the layers mainly developed, described for example in documents [1], [2] and [3], are based on silica (SiO 2 ) and meet the needs in terms of gate dielectric and insulation or inter-component passivation for the silicon industry.
- SiO 2 silica
- the intrinsic properties of the silica lead to generate in the layer isolating an electric field 2.5 times higher than in the semiconductor.
- SiC breakdown field is 2 MV / cm
- the stress suffered by the silica becomes too great to guarantee the reliability of the components: the lifetime of the silica subjected to a field of 5 MV / cm falls from 10 years to 1,000 seconds passing from an operating temperature of 25 0 C to 35O 0 C.
- the operating voltage ranges of the SiC components are limited by the breakdown of the dielectric insulation, thus preventing the maximum benefit from the potentialities SiC.
- Silicon nitrides (Si 3 N 4 ) and aluminum nitrides (AlN) have also been proposed to replace silica as insulating materials on SiC, as described for example in documents [5] and [6].
- the dielectric permittivity of these materials respectively 7.5 and 8.5 [8] is lower than that of SiC, limiting the operating voltage ranges of the components on SiC.
- Alumina Al 2 O 3
- the dielectric permittivity of alumina is of the order of magnitude of that of SiC, but its low breakdown field (about 5 MV / cm according to [8]) also limits the operating voltage ranges of the components on SiC.
- the desired properties are the secondary electron emission coefficient and the plasma ignition threshold and the coating preparation conditions are optimized for these characteristics.
- MgO-based coatings used as a buffer layer for the epitaxy of pervoskite films on silicon, as described in documents [20] to [23], or III-V semiconductor substrates, as described in documents [24] to [26], or else as gate oxide, as described in documents [27] and [28], for thin film transistors TFT (Thin Film Transistor).
- These MgO layers are generally prepared by vacuum evaporation (PVD) or by laser ablation which are difficult to integrate in a microelectronics production line.
- the document [29] also describes the conditions for the preparation of MgO layers from magnesium alkoxide, intended for the isolation of magnetic elements.
- the desired properties are high electrical resistance, high thermal stability (up to 1200 ° C.) and good adhesion to the substrate.
- the coating preparation conditions have been optimized for these characteristics.
- the present invention has been realized in view of the circumstances described above, and its first object is to provide a coating for the electrical insulation of semiconductor substrates, preferably of silicon carbide (SiC) , free from all the disadvantages mentioned above.
- Another object of the present invention is to provide an electronically insulating inter-interface components of an electronic or optoelectronic component ⁇ e, free of all the drawbacks mentioned above.
- Another object of the present invention is to provide a method of coating a substrate which is easy to implement and perfectly integrable on a production line in microelectronics.
- Another object of the present invention is to provide a method that can be used in the manufacture of an electronic or opto-electronic component, free of all the disadvantages mentioned above.
- magnesium oxide gives good performance in terms of breakdown field, dielectric permittivity and leakage current to fully exploit the potential of a material such as SiC.
- magnesium oxide has intrinsic properties, breakdown field of the order of 10 MV / cm as described in document [30] and a dielectric permittivity of the order of 10, as described in FIG. document [30b].
- the term "surface” designates any surface on which the method of the invention may be implemented. It may be a surface of a "substrate” within the meaning of the present invention or a surface made of a material deposited on a support or a surface only allowing the manufacture of the coating. According to the invention, the surface may be "simple” or “mixed”, that is to say made of a single material, or of several materials present side by side on the plane formed by the surface.
- substrate generally refers to a support on which the method of the invention is implemented.
- the substrate may consist for example of one of the conductive or semiconductive materials used in the field of microelectronics. It may be for example a material chosen from the group comprising silicon (Si), silicon carbide (SiC), gallium arsenide (AsGa), indium phosphide (InP), gallium nitride (GaN), diamond (C) or germanium (Ge).
- the at least one surface of the substrate may therefore consist of one or more of these materials (single or mixed surface).
- the substrate may also be metallic. It may consist for example of a material selected from the group consisting of steels, aluminum, zinc, nickel, iron, cobalt, copper, titanium, platinum, silver and gold ; or an alloy of these metals; or an alloy chosen for example from the group comprising brass, bronze, aluminum, tin.
- the at least one surface of the substrate may therefore consist of one or more of these metals or alloys thereof (single or mixed surface).
- the "surface" of the substrate may also designate a surface made of a material deposited on a support.
- the support may consist for example of one of the abovementioned materials.
- the deposited material may for example consist of a metal layer or a metal oxide or a stack of metal layers and / or metal oxide or a mixed metal layer and / or metal oxides or an electronic component on which is deposited the layer based on magnesium oxide, for example in order to provide an inter-layer and / or inter-component electrical insulation function.
- Metal layers and / or metal oxides may be for example layers consisting of one or more metals such as those mentioned above, or of a metal alloy such as those mentioned above, or of one or more oxide (s) of one or more of these metals. metals.
- magnesium oxide-based an electrical insulating layer which may be composed of magnesium oxide alone or a mixture of magnesium oxide and one or more magnesium salt (s) and / or one or more metal (metal) or metalloid oxide (s) or organometallic compound (s) (denoted respectively (I), (II) and (III) below).
- the structure of the layer based on magnesium oxide can be amorphous, so-called “glass”. It can also be crystalline, that is to say composed of one or more crystallites corresponding to domains in which an order of long-distance atoms is established along the three directions of space.
- Step (a) of the process of the invention therefore consists in preparing a treatment solution of at least one hydrolyzable organomagnesium and / or at least one hydrolysable magnesium salt capable of forming a homogeneous polymeric layer or film of magnesium oxyhydroxide by hydrolysis-condensation reaction with water.
- This solution is also referred to as a "curing solution” below.
- this treating solution can be obtained for example by dissolving in a solvent a first magnesium molecular compound of general chemical formula (I): X y X ' z Mg (I) where X and X' are chosen independently from: - a hydrolyzable group, for example an alcoholate of formula O-R 1 , wherein R 1 is an alkyl group having from 1 to 10 carbon atoms, linear or branched; a complexing agent, for example a carboxylate, for example of formula R 2 -COOH, in which R 2 is an alkyl group having from 1 to 30 carbon atoms, preferably from 1 to 10 carbon atoms, linear or branched, or phenyl; or
- a ⁇ -diketone or a ⁇ -diketone derivative for example of formula R 3 -COCH 2 CO-R 4 , in which R 3 and R 4 are independently chosen from an alkyl group having from 1 to 30 carbon atoms, preferably 1 to 10 carbon atoms, linear or branched, or phenyl; where y and z respectively represent the stoichiometry of X and X 'and are such that the first molecular compound is an electrically neutral compound.
- the alkoxide may be for example a methoxide, an ethanolate or a magnesium propylate.
- the solvent may be any solvent known to those skilled in the art for preparing a sol.
- the solvent is advantageously organic.
- it may advantageously be chosen from saturated or unsaturated aliphatic alcohols of formula R 5 -OH, where R 5 represents an alkyl group having from 1 to 30 carbon atoms, preferably from 1 to 10 carbon atoms, or a phenyl group, or a diol of the formula HO-R 6 -OH, where R 6 represents an alkyl group having from 1 to 30 carbon atoms, preferably from 1 to 10 carbon atoms, or a phenyl group.
- the solvent may for example be selected from the group comprising methanol, ethanol, isopropanol, butanol, pentanol and glycol, for example ethylene glycol and triethylene glycol.
- the solvent is methanol or ethanol which volatilizes easily.
- magnesium methoxyethoxide Mg (OCH 2 CH 2 OCH 3 ) 2 .
- complexing agents examples include, for example, magnesium acetate tetrahydrate (Mg (CH 3 COO) 2 .4H 2 O) and magnesium lactate trihydrate Mg (CH 3 CHOHCOO) 2 .3H 2 O.
- magnesium 2-4 pentanedionate Mg (CH 3 COCHCOCH 3 ) Z ).
- a compound selected from the group comprising magnesium dimethoxide may be used.
- magnesium dimethoxide (Mg (OCH 3 ) 2 ) dissolved in methanol (CH 3 OH) or magnesium diethoxide (Mg (OCH 2 CH 3 ) 2 ) can advantageously be used as the first molecular compound of magnesium. ) dissolved in ethanol
- one or more magnesium salt (s) of formula (II) may advantageously be added to the treating solution:
- A is a halide ion, for example Br or Cl, or a nitrate ion.
- the function of the magnesium salt is to control the orientation of the periclase (MgO) crystallites and thus to further improve the electrical insulation properties of the magnesium oxide insulating layer of the present invention.
- This magnesium salt may also be called the second molecular compound of magnesium.
- magnesium (II) salts that can be used in the present invention are described for example in documents [37] to [39].
- the magnesium (II) salt may be mixed in a proportion of from 0 to 99% by weight, based on the first magnesium molecular compound forming the inorganic polymeric network of the coating, preferably from 0 to 25% by weight.
- the anhydrous magnesium dichloride (MgCl 2 ) is preferably mixed in a proportion ranging from 0 to 25% by weight. mass (MgO equivalent) relative to magnesium dimethoxide (Mg (OCH 3 ) 2 ).
- the magnesium salt (II) is in anhydrous form.
- the magnesium salt is dissolved in an organic solvent.
- the solvent may advantageously be chosen from the abovementioned aliphatic alcohols.
- the solvent may for example be selected from the group comprising methanol, ethanol, isopropanol, butanol and pentanol.
- the solvent is methanol or ethanol.
- magnesium salt anhydrous magnesium dichloride (MgCl 2 ) or magnesium dibromide (MgBr 2 ), dissolved for example in methanol (CH 3 OH) or ethanol. (CH 3 CH 2 OH).
- M is a metal or a metalloid
- E is a group chosen from: a hydrolyzable group, for example chosen from the group comprising a halide, such as a fluoride, chloride, bromide or iodide; nitrate; an oxalate; an alcoholate of formula OR 6 where R 6 is an alkyl group of 1 to 10 carbon atoms; a complexing agent such as a carboxylate of formula R 7 -COOH, in which R 7 is a linear or branched alkyl group having 1 to 30 carbon atoms, preferably 1 to 10 carbon atoms, or a phenyl group; a ⁇ -diketone or a ⁇ -diketone derivative, for example of formula R 8 -COCH 2 CO-R 9 , in which R 8 and R 9 are independently selected from an alkyl group having 1 to 30 carbon atoms, preferably 1 to 10 carbon atoms, linear or branched, or phenyl; a phosphonate, for example selected from the group consisting of R 10
- the function of the compound (III) is to retard the crystallization of the magnesium oxide (I) -based insulating layer and thus to control the insulating properties.
- the compound (III) can be added to the treating solution, for example, in a proportion ranging from 0 to 99% by weight relative to the magnesium salt (I) forming the inorganic polymeric network of the coating, advantageously between 0 and 50% by weight.
- the metal or metalloid M may be chosen from:
- transition metals Ti, V, Cr, Mn, Fe, Co, Ni, Cu, Zn, Y, Zr, Nb, Mo, Ru, Rh, Pd, Ag, Cd, Hf, Ta, W, Re, Os , Ir, Pt;
- the group III elements chosen from Al, Ga, In and Tl; the group IV elements chosen from Si,
- alkalis selected from Li, Na, K and Cs
- the alkaline earths chosen from Be, Ca, Sr and Ba.
- It may also be any combination or mixture of elements selected from transition metals, alkali and alkaline earth metals, lanthanides, group III elements, group IV elements, group V elements and group VI elements.
- the preparation is carried out, before or after the preparation of the treating solution, of the at least one surface where the electronically insulating layer according to the invention will be deposited (step (aa)).
- the cleaning procedure is preferably adapted to the nature, size and shape of the substrate. The choice of the cleaning procedure is within the reach of the skilled person.
- the next step (b) or (b ') consists in applying to the surface, prepared or not, the layer based on magnesium oxide, from the treating solution.
- the deposited layer is preferably uniform.
- the deposition of the magnesium oxide layer can be carried out for example by means of one of the following liquid techniques:
- spin coating is preferably used because it is easily integrable into a microelectronic production line.
- the last step (c) of the process of the invention consists in densifying the layer based on magnesium oxide deposited.
- This step can be implemented by any densification or crosslinking method making it possible to carry out the desired crosslinking at ambient temperature or at a moderate temperature, provided that the temperature is less than or equal to 1000 ° C. It makes it possible to obtain an inorganic material based on magnesium oxide forming the electronically insulating layer of the present invention.
- this step can be carried out by treatment of the magnesium oxide (I) -based insulating layer chosen from:
- a heat treatment for example in an oven or by infrared exposure or by means of a heating plate;
- the treatment when the densification or crosslinking is carried out by a heat treatment, for example in a muffle furnace, the treatment may consist, for example, in heating the layer deposited at a moderate temperature, for example between 400 ° C. and 1000 ° C. 0 C, preferably from 650 to 75O 0 C, for example around 700 0 C.
- the heating can be carried out under air or under an inert gas, for example under nitrogen or argon.
- Heating by irradiation with infrared or near-infrared radiation also makes it possible to heat the surface of the substrate at a temperature between 400 ° C. and 1000 ° C., preferably 650 ° C. to 75 ° C., for example around 700 ° C. also, the heating can be carried out under air or under an inert gas, for example under nitrogen or argon.
- the duration of the heating is that which makes it possible to obtain the densification referred to in the heating conditions of the invention. Generally, it is 2 to 150 minutes, preferably 5 to 60 minutes. For example, a good crosslinking can be obtained after 15 minutes at 700 ° C.
- the wavelength of the UV is generally between 180 and 350 nm. This technique is advantageously applicable at room temperature (generally 15 to 35 0 C).
- the duration of the insolation is that which makes it possible to obtain the targeted densification under the temperature conditions of the treatment. Generally, it is 1 to 30 minutes, preferably 1 to 5 minutes. For example, good crosslinking can be achieved after 5 minutes.
- the final thickness of the magnesium oxide insulating layer of the present invention is preferably between 10 and 500 nm, advantageously 50 to 200 nm, by example 100 nm.
- the insulating layer is of uniform thickness.
- the substrates covered by the layer based on magnesium oxide prepared according to the invention positively fulfill the requirements for the intended applications such as the electrical insulation of semiconductor substrates, more particularly silicon carbide (SiC), or the inter-component electrical insulation, namely:
- Magnesium oxide insulating coating according to the invention has a low leakage current, even at high temperature, generally less than 10 ⁇ 8 A / cm 2 at 25 0 C and less than 10 ⁇ 5 A / cm 2 at 25O 0 C.
- the process for the preparation of Magnesium oxide insulating coating according to the invention is simple, inexpensive, integrable on a microelectronics production line.
- the present invention thus also relates to an electronically insulating inorganic layer obtainable by the process of the invention, in particular to a layer having the aforementioned characteristics.
- the present invention cleverly combines the use of a coating based on magnesium oxide (MgO) made by a sol-gel process and deposited by liquid and densification treatment at a temperature less than or equal to 1000 0 C to solve all the problems of the prior art.
- MgO magnesium oxide
- the method of the invention is used for electrical insulation in place of silica (SiO 2), aluminum nitride (AlN), silicon nitride (Si 3 N 4 ) or aluminum oxide.
- silica SiO 2
- AlN aluminum nitride
- Si 3 N 4 silicon nitride
- aluminum oxide silicon oxynitride
- the present invention also relates to the use of the method of the invention for manufacturing a semiconductor / electronically insulating metal interface of an electronic or optoelectronic component. Also, the present invention also relates to the use of the method of the invention for making an electronically insulating inter-interface components of an electronic or optoelectronic component ⁇ e. Also, the present invention also relates to the use of the method of the invention in the manufacture of an electronic component selected from the group comprising power diodes, thyristors, transistors, and nonvolatile RAMs.
- the present invention also relates to the use of the method of the invention in the manufacture of an opto-electronic component selected from the group comprising switches and detectors.
- the present invention finds many applications in the manufacture of electronic components on SiC, for example power diodes (PN junction rectifiers, Schottky diodes, JBS diodes), thyristors, transistors (MOSFET, MESFET, JFET) and the memories
- Non-volatile RAM In the opto-electronic field, the applications concern switching
- FIG. 1 is a schematic sectional view of a substrate after deposition of the insulating layer based on magnesium oxide according to the invention.
- FIG. 2 is a diagram showing the breakdown field breakdown at ambient temperature as a function of the applied electric field in MV / cm on an insulating layer based on magnesium oxide deposited on a platinum layer and prepared according to the invention .
- FIG. 3 is a graph showing the evolution of the leakage current density in A / cm 2 at 1 MV / cm as a function of the temperature of the 0 C measurement of an insulating layer based on oxide. of magnesium deposited and densified according to the invention on a platinum layer.
- FIG. 4 is a diagram showing the average breakdown field MV / cm 2 at room temperature of an insulating layer based on magnesium oxide deposited and densified according to the invention depending on the nature of the support.
- FIG. 5 is a graph showing the evolution of the leakage current density in A / cm 2 at 2 MV / cm as a function of the temperature of the 0 C measurement of an insulating layer based on magnesium deposited and densified according to the invention on a substrate of silicon carbide (SiC).
- the treating solution is a solution based on a mixture of Mg (OCH 3 ) 2 and MgCl 2 in an 80/20 mass ratio.
- the treating solution is prepared according to the following procedure:
- the treating solution is filtered (0.45 ⁇ m polypropylene disposable filter marketed by Whatman) at the time of injection on the platinum surface.
- the silicon wafer is then put into rotation, at a speed of 2000 rpm, for one minute.
- the magnesium oxide layer obtained is erased on a surface of 0.5 cm 2 using a cotton swab dipped in an aqueous solution of hydrochloric acid (1 M).
- the layer based on magnesium oxide is then densified in a muffle furnace, with a plateau at 700 ° C. for one hour, with a ramp for raising the temperature of 10 ° C./min.
- the thickness of the magnesium oxide layer is 100 nm.
- Figure 1 is a schematic representation of the substrate (3) coated with the insulating layer (2).
- Gold pads 200 ⁇ m in diameter are then deposited on the magnesium oxide layer by physical evaporation with heat, using a suitable mask.
- the electrical characterizations are then measured using the platinum layer and gold pads located on either side of the insulating layer based on densified magnesium oxide (electrical structure: metal / insulating layer 1 '). Invention / Metal).
- FIG. 2 gives the breakdown field distribution at ambient temperature as a function of the applied electric field in MV / cm on the layer. insulation based on magnesium oxide deposited on a platinum layer and prepared according to Example 1.
- the average value of the breakdown field is 3.4 MV / cm.
- FIG. 3 shows the evolution of the leakage current density in A / cm 2 at 1 MV / Cm as a function of the temperature of the 0 C measurement of the insulating layer based on magnesium oxide deposited on a layer of platinum and prepared according to Example 1.
- the leakage current increases to lxl ⁇ 8xlO ⁇ 9 ⁇ 6 A / cm 2.
- Example 2 Process for producing an insulating layer of magnesium oxide from an Mg (OCH 3 ) 2 treating solution according to the invention
- the treating solution is prepared by diluting magnesium dimethoxide dispersed in methanol (Mg (OCH 3 ) 2 / CH 3 OH, 6-10% by weight, marketed by Aldrich under the reference 33,565-7) in methanol Normapur (brand name). of commerce) (CH 3 OH, sold by VWR under the reference 20,847) so as to obtain a mass concentration of 2.5% equivalent MgO by weight.
- the layer based on magnesium oxide is deposited on 3 supports of different nature: a silicon wafer (diameter: 5.1 mm) coated with a platinum layer (thickness: ⁇ 100 nm), Silicon wafer (diameter: 5.1 mm) and wafer (wafer) of Silicon Carbide (diameter: 5.1 mm).
- the wafer surface of silicon coated with a platinum layer is prepared as described in Example 1.
- Silicon and silicon carbide wafers have been cleaned in the following manner:
- the deposition of the treating solution is carried out on the three substrates by spin coating (or spin-coating) at 21 ° C. with controlled hygrometry (45 ⁇ 5%).
- the treatment solution is filtered (0.45 ⁇ m polypropylene disposable filter marketed by Whatman) at the time of injection onto the surface of the substrate. The latter is then rotated at a speed of 1500 rpm for one minute.
- the resulting magnesium oxide layer is erased over an area of 0.5 cm 2 using a soaked cotton swab. an aqueous solution of hydrochloric acid (IM).
- IM hydrochloric acid
- the layers based on magnesium oxide are then densified in a muffle furnace, with a plateau at 700 ° C. for one hour, with a temperature ramp of 10 ° C./min. After the densification step, the thickness of the magnesium oxide-based layers is about 100 nm.
- an ohmic contact made of titanium (Ti) is deposited by physical heat-evaporation, on the rear face of the semiconductor substrate previously cleaned with 10% hydrofluoric acid (HF). .
- Gold pads 200 ⁇ m in diameter are then deposited on the magnesium oxide layer by physical evaporation with heat, using a suitable mask.
- the platinum layer and the gold pads situated on either side of the densified magnesium oxide insulating layer in the case of the wafer of silicon coated with a platinum layer (electrical structure: metal / insulating layer of the present invention / metal), - the ohmic contact made of titanium (Ti) located on the rear face of the semiconductor substrate and gold studs deposited on the densified magnesium oxide insulating layer in the case of wafers of silicon and silicon carbide (electrical structure: Metal / insulating layer of the present invention / Semi -conductor).
- FIG. 4 is a diagram representing the average breakdown field in MV / cm 2 at ambient temperature of the insulating layer based on magnesium oxide deposited and densified according to Example 2 as a function of the nature of the support.
- Leakage current Figure 5 shows a graph showing the evolution of the leakage current density in A / cm 2 at 2 MV / Cm as a function of the temperature of the 0 C measurement of an insulating layer based on Magnesium oxide prepared according to Example 2 on a substrate of silicon carbide (SiC). Between room temperature and 25 ° C., the leakage current increases from 3xlCT 9 to 2xlCT 4 A / cm 2 .
- Example 3 Process for producing an insulating layer based on magnesium oxide and calcium oxide
- the treating solution is prepared according to the following procedure:
- Anhydrous calcium dichloride (CaCl 2 , sold by Fluka under the reference 21,074) is dissolved with magnetic stirring in methanol Normapur (trademark) (CH 3 OH, sold by VWR under the reference 20,847) at a concentration of mass equivalent of CaO between 3 and 4%.
- CH 3 OH methanol Normapur
- the agitation of this clear and transparent solution which will be called CaCl 2 / CH 3 OH in this example is maintained for 30 minutes.
- the CaCl 2 / CH 3 OH solution is then mixed with magnetic stirring with a solution of magnesium dimethoxide dispersed in methanol.
- the deposition of the treating solution is carried out by spin-coating at 21 ° C. with controlled hydrometry (45 ⁇ 5%).
- the treating solution is filtered (0.45 ⁇ m polypropylene disposable filter marketed by Whatman) at the time of injection on the platinum surface.
- the wafer is then rotated at a speed of 2000 rpm for one minute.
- the layer based on magnesium oxide is then densified in a muffle furnace, with a plateau at 700 ° C. for one hour, with a ramp for raising the temperature to 10 ° C./min.
- the thickness of the base layer of magnesium oxide and calcium oxide is about 100 nm.
- Example 4 Process for producing an insulating layer based on magnesium oxide and silica
- Si (OCH 3 ) 4 sold by ABCR under the reference SIT7510.0
- CH 3 OH marketed by VWR under reference 20,847
- SiO 2 mass between 3 and 4%.
- the stirring of this clear and transparent solution which will be called Si (OCH 3 ) 4 / CH 3 OH in this example is maintained for 30 minutes.
- the Si (OCH 3 ) 4 / CH 3 OH solution is then mixed with magnetic stirring with a solution of magnesium dimethoxide dispersed in methanol.
- Mg (OCH 3 ) 2 / CH 3 OH added were calculated to have a mass proportion Mg (OCH 3 ) 2 / Si (OCH 3 ) 4 of 80/20 in oxide equivalents. After stirring for 30 minutes, a clear and transparent treating solution is obtained.
- the synthesis is entirely carried out in a humidity-free atmosphere (dry glove box) or in a stream of dry gas (typically argon) in order to avoid any pre-hydrolysis of the magnesium precursors and of the calcium, which are particularly sensitive to water. 'water.
- dry gas typically argon
- a silicon wafer (diameter: 5.1 mm) covered with a platinum layer (thickness: ⁇ 100 nm) deposited by hot physical evaporation is first degreased with acetone and then dried. with absolute ethanol.
- the deposition of the treating solution is carried out by spin-coating at 21 ° C. with controlled hydrometry (45 ⁇ 5%).
- the treating solution is filtered (0.45 ⁇ m polypropylene disposable filter marketed by Whatman) at the time of injection on the platinum surface.
- the wafer is then rotated at a speed of 2000 rpm for one minute.
- the layer based on magnesium oxide is then densified in a muffle furnace, with a plateau at 700 ° C. for one hour, with a ramp for raising the temperature to 10 ° C./min.
- the thickness of the layer based on magnesium oxide and silica is about 100 nm.
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
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- Ceramic Engineering (AREA)
- Thermal Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
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Abstract
Description
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Application Number | Priority Date | Filing Date | Title |
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FR0410789A FR2876497B1 (fr) | 2004-10-13 | 2004-10-13 | Revetement a base de mgo pour l'isolation electrique de substrats semi-conducteurs et procede de fabrication |
PCT/FR2005/050844 WO2006040499A1 (fr) | 2004-10-13 | 2005-10-12 | Revetement a base de mgo pour l'isolation electrique de substrats semi-conducteurs et procede de fabrication |
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EP1800336A1 true EP1800336A1 (fr) | 2007-06-27 |
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EP05810812A Withdrawn EP1800336A1 (fr) | 2004-10-13 | 2005-10-12 | Revetement a base de mgo pour l'isolation electrique de substrats semi-conducteurs et procede de fabrication |
Country Status (5)
Country | Link |
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US (2) | US8821961B2 (fr) |
EP (1) | EP1800336A1 (fr) |
JP (1) | JP5373287B2 (fr) |
FR (1) | FR2876497B1 (fr) |
WO (1) | WO2006040499A1 (fr) |
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JP4528950B2 (ja) * | 2005-06-23 | 2010-08-25 | 独立行政法人産業技術総合研究所 | 強誘電体膜構造体の製造方法 |
US8878245B2 (en) * | 2006-11-30 | 2014-11-04 | Cree, Inc. | Transistors and method for making ohmic contact to transistors |
US8368100B2 (en) | 2007-11-14 | 2013-02-05 | Cree, Inc. | Semiconductor light emitting diodes having reflective structures and methods of fabricating same |
EP2517255B1 (fr) | 2009-12-25 | 2019-07-03 | Ricoh Company, Ltd. | Transistor à effet de champ, mémoire semi-conductrice, élément d'affichage, dispositif d'affichage d'image et système |
JP5899615B2 (ja) * | 2010-03-18 | 2016-04-06 | 株式会社リコー | 絶縁膜の製造方法及び半導体装置の製造方法 |
US9070851B2 (en) | 2010-09-24 | 2015-06-30 | Seoul Semiconductor Co., Ltd. | Wafer-level light emitting diode package and method of fabricating the same |
FR2967992B1 (fr) | 2010-11-26 | 2015-05-29 | Commissariat Energie Atomique | Preparation de sols d'oxydes metalliques stables, utiles notamment pour la fabrication de films minces a proprietes optiques et resistants a l'abrasion |
DE102014108348A1 (de) | 2014-06-13 | 2015-12-17 | Osram Opto Semiconductors Gmbh | Verfahren zur Herstellung einer Beschichtung sowie optoelektronisches Halbleiterbauteil mit einer Beschichtung |
CN107431128B (zh) * | 2015-01-08 | 2020-12-25 | 韩国化学研究院 | 包括有机、无机杂化钙钛矿化合物膜的器件的制备方法及包括有机、无机杂化钙钛矿化合物膜的器件 |
CN205944139U (zh) | 2016-03-30 | 2017-02-08 | 首尔伟傲世有限公司 | 紫外线发光二极管封装件以及包含此的发光二极管模块 |
CN105869711B (zh) * | 2016-06-17 | 2017-11-24 | 辽宁嘉顺化工科技有限公司 | 铁盘类电热元件的绝缘层材料及其制备方法 |
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JPS58130546A (ja) | 1981-12-28 | 1983-08-04 | Ibiden Co Ltd | 炭化珪素質基板およびその製造方法 |
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2004
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2005
- 2005-10-12 JP JP2007536235A patent/JP5373287B2/ja not_active Expired - Fee Related
- 2005-10-12 WO PCT/FR2005/050844 patent/WO2006040499A1/fr active Application Filing
- 2005-10-12 EP EP05810812A patent/EP1800336A1/fr not_active Withdrawn
- 2005-10-12 US US11/664,765 patent/US8821961B2/en not_active Expired - Fee Related
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2014
- 2014-07-23 US US14/338,706 patent/US20140332935A1/en not_active Abandoned
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US6071555A (en) * | 1998-11-05 | 2000-06-06 | The United States Of America As Represented By The Secretary Of The Army | Ferroelectric thin film composites made by metalorganic decomposition |
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Publication number | Publication date |
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US8821961B2 (en) | 2014-09-02 |
FR2876497B1 (fr) | 2007-03-23 |
FR2876497A1 (fr) | 2006-04-14 |
JP2008516459A (ja) | 2008-05-15 |
JP5373287B2 (ja) | 2013-12-18 |
WO2006040499A1 (fr) | 2006-04-20 |
US20080258270A1 (en) | 2008-10-23 |
US20140332935A1 (en) | 2014-11-13 |
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