JP2009010383A - 亜鉛酸化物半導体およびこれを製造するための方法 - Google Patents
亜鉛酸化物半導体およびこれを製造するための方法 Download PDFInfo
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 217
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 109
- 239000004065 semiconductor Substances 0.000 title claims abstract description 59
- 238000000034 method Methods 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title description 11
- 239000010409 thin film Substances 0.000 claims abstract description 85
- 229910052751 metal Inorganic materials 0.000 claims abstract description 40
- 239000002184 metal Substances 0.000 claims abstract description 40
- 239000003054 catalyst Substances 0.000 claims abstract description 39
- 238000010438 heat treatment Methods 0.000 claims abstract description 28
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 22
- 229910021478 group 5 element Inorganic materials 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 239000011701 zinc Substances 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 239000003570 air Substances 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000012298 atmosphere Substances 0.000 claims description 3
- 229910052790 beryllium Inorganic materials 0.000 claims description 3
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 3
- 239000007789 gas Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000011261 inert gas Substances 0.000 claims description 3
- 229910052746 lanthanum Inorganic materials 0.000 claims description 3
- 229910052745 lead Inorganic materials 0.000 claims description 3
- 229910052744 lithium Inorganic materials 0.000 claims description 3
- 229910052749 magnesium Inorganic materials 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052703 rhodium Inorganic materials 0.000 claims description 3
- 229910052708 sodium Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 230000008569 process Effects 0.000 abstract description 4
- 229910052739 hydrogen Inorganic materials 0.000 description 21
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 19
- 239000001257 hydrogen Substances 0.000 description 19
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 9
- 239000002019 doping agent Substances 0.000 description 9
- 229910052698 phosphorus Inorganic materials 0.000 description 9
- 239000011574 phosphorus Substances 0.000 description 9
- 229910001392 phosphorus oxide Inorganic materials 0.000 description 8
- VSAISIQCTGDGPU-UHFFFAOYSA-N tetraphosphorus hexaoxide Chemical compound O1P(O2)OP3OP1OP2O3 VSAISIQCTGDGPU-UHFFFAOYSA-N 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 7
- 239000012212 insulator Substances 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 238000010894 electron beam technology Methods 0.000 description 3
- 230000005355 Hall effect Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- YWEUIGNSBFLMFL-UHFFFAOYSA-N diphosphonate Chemical compound O=P(=O)OP(=O)=O YWEUIGNSBFLMFL-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 229920005570 flexible polymer Polymers 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000004549 pulsed laser deposition Methods 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- -1 zinc oxide compound Chemical class 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
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- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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Abstract
【解決手段】n型半導体の電気的特性を有する亜鉛酸化物薄膜上に金属触媒層を導入し、これを熱処理してp型半導体の電気的特性を有する亜鉛酸化物薄膜に改質する。熱処理過程により、亜鉛酸化物薄膜内に存在する水素原子は、金属触媒によって除去される。したがって、金属触媒および熱処理によって薄膜内の水素原子が除去され、キャリアである正孔の濃度は増加する。すなわち、n型の亜鉛酸化物薄膜は、高濃度のp型亜鉛酸化物半導体に改質されるのである。
【選択図】図1
Description
[C.G Van de Walle et al,Nature 423,626(2003)]。
日本のYamamotoグループ[T.Yamamoto et al,Jpn.J.Appl.Phys.Part2 38,L166(1999)]では、5族元素であるNと3族元素であるGaまたはA1などを同時にドーピングする方法でp型亜鉛酸化物半導体を製作できるということを理論的に提示した。
<実施例>
図1は、本発明の好ましい実施形態によってp型亜鉛酸化物半導体薄膜を製造する方法を説明するためのフローチャートである。
図2は、本発明の好ましい実施形態に係るp型亜鉛酸化物半導体を示した断面図である。
また、前記金属触媒層140は、電子ビーム蒸着器(e−beam evaporator)、熱蒸着器(thermal evaporator)、スパッタリング蒸着器、またはパルスレーザ蒸着器で形成されることが好ましい。
120:亜鉛酸化物薄膜
140:金属触媒層
Claims (8)
- 基板上に1族元素または5族元素が含まれた亜鉛酸化物薄膜を形成する段階と、
前記亜鉛酸化物薄膜上に金属触媒層を形成する段階;および
前記金属触媒層が形成された基板を熱処理し、前記亜鉛酸化物薄膜をp型半導体の電気的特性を有する亜鉛酸化物半導体に転換させる段階を含むp型亜鉛酸化物半導体の形成方法。 - 前記金属触媒層は、Ni、Au、Pt、Pb、Mg、Cu、Zn、Ag、Sc、CO、Rh、Li、Be、Ca、Ru、Ti、Ta、Na、およびLaのうちから選択される少なくともいずれか1つまたはこれらの合金を有することを特徴とする、請求項1に記載のp型亜鉛酸化物半導体の形成方法。
- 前記熱処理は、50℃〜1500℃で1秒〜30分間行われることを特徴とする、請求項1に記載のp型亜鉛酸化物半導体の形成方法。
- 前記熱処理は、400℃〜800℃で行われることを特徴とする、請求項3に記載のp型亜鉛酸化物半導体の形成方法。
- 前記熱処理は、窒素、酸素、空気、および不活性気体のうちの少なくとも1つを含む気体雰囲気のチャンバ内で進められることを特徴とする、請求項3に記載のp型亜鉛酸化物半導体の形成方法。
- 基板上に1族元素または5族元素が含まれた亜鉛酸化物薄膜を形成する段階と、
前記亜鉛酸化物薄膜上に金属触媒層を形成する段階;および
前記金属触媒層が形成された基板を熱処理する段階とを用い、前記亜鉛酸化物薄膜内に存在する水素原子を除去し、n型の前記亜鉛酸化物薄膜がP型半導体の電気的特性を有するように改質した亜鉛酸化物半導体。 - 前記金属触媒層は、Ni、Au、Pt、Pb、Mg、Cu、Zn、Ag、Sc、CO、Rh、Li、Be、Ca、Ru、Ti、Ta、Na、およびLaのうちから選択される少なくともいずれか1つまたはこれらの合金を有することを特徴とする、請求項6に記赦の亜鉛酸化物半導体。
- 前記熱処理は、400℃〜800℃で行われ、窒素、酸素、空気、および不活性気体のうちの少なくとも1つを含む気体雰囲気のチャンバ内で進められることを特徴とする、請求項6に記載の亜鉛酸化物半導体。
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KR1020070063270A KR100884883B1 (ko) | 2007-06-26 | 2007-06-26 | 아연산화물 반도체 및 이를 제조하기 위한 방법 |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009298689A (ja) * | 2008-06-12 | 2009-12-24 | Commiss Energ Atom | ZnO試料の非放射再結合中心を不動態化する方法及びそれによって用意された不動態のZnO試料 |
JP2016066804A (ja) * | 2009-11-13 | 2016-04-28 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
Families Citing this family (9)
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KR102443297B1 (ko) * | 2009-09-24 | 2022-09-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 산화물 반도체막 및 반도체 장치 |
WO2011058865A1 (en) * | 2009-11-13 | 2011-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor devi ce |
KR20210043743A (ko) | 2009-12-04 | 2021-04-21 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
KR101797253B1 (ko) * | 2009-12-04 | 2017-11-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
TWI447820B (zh) * | 2010-12-27 | 2014-08-01 | Nat Inst Chung Shan Science & Technology | Preparation of P - type Zinc Oxide Thin Films |
US8797303B2 (en) | 2011-03-21 | 2014-08-05 | Qualcomm Mems Technologies, Inc. | Amorphous oxide semiconductor thin film transistor fabrication method |
US9379254B2 (en) * | 2011-11-18 | 2016-06-28 | Qualcomm Mems Technologies, Inc. | Amorphous oxide semiconductor thin film transistor fabrication method |
JPWO2013080506A1 (ja) * | 2011-11-28 | 2015-04-27 | パナソニックIpマネジメント株式会社 | 半導体素子 |
KR102417572B1 (ko) * | 2020-12-01 | 2022-07-06 | 광주과학기술원 | 강유전성 및 자성 특성을 갖는 복합 박막 구조체, 및 이를 포함하는 멤커패시터, 및 그 제조 방법 |
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JP2003282434A (ja) * | 2002-03-20 | 2003-10-03 | Ngk Insulators Ltd | ZnO系エピタキシャル成長基板、ZnO系エピタキシャル下地基板、及びZnO系膜の製造方法 |
JP2004304166A (ja) * | 2003-03-14 | 2004-10-28 | Rohm Co Ltd | ZnO系半導体素子 |
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KR100470155B1 (ko) * | 2003-03-07 | 2005-02-04 | 광주과학기술원 | 아연산화물 반도체 제조방법 |
KR100588486B1 (ko) * | 2003-09-05 | 2006-06-12 | 광주과학기술원 | p형 아연 산화물 반도체의 오믹 접촉 형성방법 |
KR100696529B1 (ko) * | 2005-08-02 | 2007-03-19 | 삼성에스디아이 주식회사 | 금속원소를 포함하는 광전변환소자용 전극 및 이를 채용한염료감응 태양전지 |
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JP3399392B2 (ja) * | 1999-02-19 | 2003-04-21 | 株式会社村田製作所 | 半導体発光素子、およびその製造方法 |
JP2003282434A (ja) * | 2002-03-20 | 2003-10-03 | Ngk Insulators Ltd | ZnO系エピタキシャル成長基板、ZnO系エピタキシャル下地基板、及びZnO系膜の製造方法 |
JP2004304166A (ja) * | 2003-03-14 | 2004-10-28 | Rohm Co Ltd | ZnO系半導体素子 |
Cited By (3)
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JP2009298689A (ja) * | 2008-06-12 | 2009-12-24 | Commiss Energ Atom | ZnO試料の非放射再結合中心を不動態化する方法及びそれによって用意された不動態のZnO試料 |
JP2016066804A (ja) * | 2009-11-13 | 2016-04-28 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US10083823B2 (en) | 2009-11-13 | 2018-09-25 | Semiconductor Energy Laboratory Co., Ltd. | Sputtering target and manufacturing method thereof, and transistor |
Also Published As
Publication number | Publication date |
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US20090001363A1 (en) | 2009-01-01 |
KR100884883B1 (ko) | 2009-02-23 |
US7842539B2 (en) | 2010-11-30 |
KR20080114068A (ko) | 2008-12-31 |
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