EP1728893B1 - Procédé de préparation d'une couche de ZnO - Google Patents

Procédé de préparation d'une couche de ZnO Download PDF

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Publication number
EP1728893B1
EP1728893B1 EP06010939A EP06010939A EP1728893B1 EP 1728893 B1 EP1728893 B1 EP 1728893B1 EP 06010939 A EP06010939 A EP 06010939A EP 06010939 A EP06010939 A EP 06010939A EP 1728893 B1 EP1728893 B1 EP 1728893B1
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EP
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Prior art keywords
zinc oxide
oxide film
gas
substrate
dimethylzinc
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Expired - Fee Related
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EP06010939A
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German (de)
English (en)
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EP1728893A3 (fr
EP1728893A2 (fr
Inventor
Yukichi c/o Japan Pionics Co. Ltd. Takamatsu
Toshio c/o Japan Pionics Co. Ltd. Akiyama
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Japan Pionics Ltd
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Japan Pionics Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process

Definitions

  • the present invention relates to a process for forming zinc oxide film.
  • the present invention relates to a process for forming zinc oxide film on surfaces of various kinds of substrates safely and easily in accordance with a chemical vapor deposition (CVD) method with a use of a material prepared by dissolving dimethylzinc or diethylzinc into an organic solvent, or supplying vaporized gas of dimethylzinc or diethylzinc and oxidizing agent gas into a CVD apparatus alternately.
  • CVD chemical vapor deposition
  • zinc oxide is widely employed as a substance for forming an insulation film, a transparent electrode film or a semiconductor film over the surfaces of various substrates.
  • the zinc oxide film is proposed to be employed as a material film for a photoelectronic element as an alternative to a gallium nitride based light emitting diode.
  • a process for forming the zinc oxide film over a surface of a substrate in accordance with a sputtering process under an atmosphere of argon gas, or under an existence of argon gas and oxygen gas, with the use of zinc and zinc oxide as target materials was widely employed. Further, a process for forming zinc oxide film in accordance with a sol-gel method was also utilized.
  • Japanese Unexamined Patent Application Laid-Open No. 2001-210867 discloses a process for forming zinc oxide film over P-type gallium nitride semiconductor layer in the gallium nitride based semiconductor light emitting element in accordance with vacuum vapor deposition process, laser ablation process or sol-gel process.
  • Japanese Unexamined Patent Application Laid-Open No. 2003-105559 discloses a process for producing a blue luminescent article comprising zinc oxide film which consists of a step of forming the zinc oxide film with an addition of a dopant over a substrate, a step of entering the substrate into a heat treatment apparatus and a step of heat treatment under an atmosphere of a predetermined gas in the heat treatment apparatus.
  • Japanese Unexamined Patent Application Laid-Open No. 2004-323941 discloses a process for forming a zinc oxide film employed to a front screen for plasma display panel, low radiation glass sheet or so in accordance with a magnetron sputtering process.
  • the zinc oxide film is formed over the substrate in accordance with the CVD method, it is technically more difficult than either the zinc oxide film formation in accordance with a sputtering process or the zinc oxide film formation in accordance with a sol-gel process. It is difficult for the CVD method to supply a material of a homogeneous composition to the surface of the substrate because the foregoing solid materials have vaporizing temperature significantly different from that of the solvent, and only the solvent easily vaporizes with heating resultantly causing to precipitate the solid material.
  • dimethylzinc particularly has a chemical property of igniting in the air, exploding in the oxygen.
  • the zinc oxide film formed in accordance with the CVD method is still desired to be practical because the zinc oxide film with CVD method is expected to provide higher quality and higher purity than the zinc oxide film formed in accordance with a sputtering process or a sol-gel process.
  • the zinc oxide film is employed for photo-electronics devices, those having a crystal of extremely high quality are demanded.
  • an object of the present invention is to provide a process for forming zinc oxide film of extremely high quality and high purity on surfaces of various kinds of substrates safely in accordance with the CVD method.
  • the present invention provides a process for forming zinc oxide film over a surface of a substrate which comprises a step of vaporizing and supplying a material prepared by dissolving dimethylzinc or diethylzinc into an organic solvent to a chemical vapor deposition apparatus and a step of simultaneously supplying a gas comprising an oxidizing agent gas to the chemical vapor deposition apparatus.
  • the present invention provides a process for forming zinc oxide film over a surface of a substrate which comprises a step of vaporizing and supplying a material prepared by dissolving dimethylzinc or diethylzinc into an organic solvent to a chemical vapor deposition apparatus and a step of simultaneously supplying a gas comprising an oxidizing agent gas to the chemical vapor deposition apparatus.
  • the process for forming zinc oxide film of the present invention is applicable for forming zinc oxide film over various substrates.
  • the present invention is effective in a viewpoint of obtaining a crystal of extremely high quality.
  • the present invention aims to improve safety by dissolving dimethylzinc or diethylzinc into an organic solvent and diluting the mixture.
  • the material employed in the invention is a solution prepared by dissolving dimethylzinc or diethylzinc into an organic solvent such as ether, ketone, ester, alcohol, hydrocarbon, etc.
  • Examples of the above ether include propyl ether, methylbutyl ether, ethyl propyl ether, ethyl butyl ether, trimethylene oxide, tetrahydrofuran, tetrahydropyran, etc.
  • Examples of the above ketone include acetone, ethyl methyl ketone, iso-propyl methyl ketone, iso-butyl methyl ketone, etc.
  • ester examples include ethyl formate, propyl formate, isobutyl formate, methyl acetate, ethyl acetate, propyl acetate, butyl acetate, isobutyl acetate, methyl propionate, propyl propionate, methyl butyrate, ethyl butyrate, etc.
  • alcohol examples include methyl alcohol, ethyl alcohol, propyl alcohol, butyl alcohol, etc.
  • hydrocarbon examples include hexane, heptane, octane, nonane, decane, cyclohexane, cycloheptane, cyclooctane, cyclononane, cyclodecane, etc.
  • a paraffinic hydrocarbon expressed with general formula C n H 2n+2 or cycloparaffinic hydrocarbon expressed with general formula C n H 2n (n: about 5 to 12) is preferable; and further, hexane, heptane and octane are particularly preferable.
  • the content of dimethylzinc or diethylzinc in the material is usually 0.1 to 5.0 mol/liter and preferably 0.5 to 2.0 mol/liter.
  • a disadvantage occurs that a forming rate of the zinc oxide film becomes slow.
  • an anxiety occurs that a safe manipulation of the material, a safe vaporization and supplying of the material and a safe formation of the zinc oxide film become difficult.
  • the material prepared by mixing dimethylzinc or diethylzinc with the organic solvent is usually being prepared easily and is stable at around a room temperature (0 to 40 °C), under an ordinary pressure or its adjacent pressure (80 to 120 kPa) and among an atmospheric inert gas. Further, even if the material came into contact with air or oxygen by any chance, it should never ignite or explode.
  • the process for forming zinc oxide film of the present invention may be carried out by means of an apparatus for vaporizing and supplying as shown in FIG. 1 and by means of a CVD apparatus as shown in FIG. 3 .
  • a liquid flow controller 5 such as a liquid mass flow controller or so
  • a vaporizer 7, and a CVD apparatus 8 are usually installed with optionally attaching a degasser 4 in addition.
  • a gas flow controller 9 and a carrier gas supply pipeline 10 are connected to the vaporizer 7 surrounded by a heat insulator 6.
  • a gas pre-heater 11 an oxidizing agent gas feed line 12 for feeding the oxidizing agent gas such as an oxygen gas, an ozone gas, nitrogen oxides gas, a steam gas or so is also connected to the CVD apparatus 8.
  • the material 2 for forming the zinc oxide film is fed from the material container 3 by the pressure of the inert gas to the vaporizer 7, followed by being vaporized, and is further supplied to the CVD apparatus 8. Moreover, the oxygen gas or so is supplied through the oxidizing agent gas feed line 12.
  • the process for forming the zinc oxide film may be carried out either in accordance with a pressure reduction CVD method, or in accordance with an ordinary pressure CVD method.
  • a pressure reduction CVD method or in accordance with an ordinary pressure CVD method.
  • the material of favorably homogeneous is uniformly vaporized and can be supplied with desired density and desired flow rate, the zinc oxide film having crystal of high quality over various substrates can be obtained.
  • examples include the vaporizer whose material feed portion 14 has a structure that a corrosion resistant synthetic resin 17 such as fluorine-based resin, polyimide-based resin or so; the vaporizer having a coaxial ejection tube 18 for ejecting the liquid material into a vaporizing chamber 13 and for vaporizing consists of an inner tube for ejecting the liquid material and an outer tube for ejecting a carrier gas; or the vaporizer having means 19 for supplying water for cooling along the side surface the CVD material feed portion, etc.
  • a corrosion resistant synthetic resin 17 such as fluorine-based resin, polyimide-based resin or so
  • the vaporizer having a coaxial ejection tube 18 for ejecting the liquid material into a vaporizing chamber 13 and for vaporizing consists of an inner tube for ejecting the liquid material and an outer tube for ejecting a carrier gas
  • the vaporizer having means 19 for supplying water for cooling along the side surface the CVD material feed portion, etc.
  • FIG. 3 illustrates the apparatus having an annular susceptor 22 for placing a substrate 21 among a reaction chamber 20, a heater 23 for heating the substrate, a material feed pipe 24 for introducing dimethylzinc or diethylzinc into the reaction chamber, a feed pipe 25 for introducing the oxidizing agent gas from outside into the reaction chamber, a rotation axis 26 of the susceptor, and a reaction gas exhaust zone 27.
  • a material feed portion 14 having the passageways in which the inside thereof was constituted of a fluororesin (PFA), and the portion in contact with the outside of the vaporizer was constituted of stainless steel (SUS316).
  • the PFA made portion 17 was a column having an outer diameter of 16 mm and a height of 34.2 mm.
  • the stainless steel outside the column had a thickness of 2.0 mm.
  • an ejection pipe 18 whose leading end is coaxial having an inner pipe as a passageway for the material and an outer pipe as a passageway for a carrier gas was provided.
  • a cooling pipe 19 that flew water for cooling along the side face of the material feed portion was equipped as a cooling means for the CVD material feed portion.
  • a vaporizer 7 which was made of stainless steel (SUS316) and incorporated with a vaporized gas exhaust port 15, a heater 16.
  • the vaporization chamber was in the form of a column having an inner diameter of 65 mm and a height of 92.5 mm and a protrusion height at the bottom of 27.5 mm.
  • the vaporized gas exhaust port 15 was placed at a height of 15 mm from the bottom of the vaporizer.
  • a annular susceptor 22 (diameter: 260 mm; thickness: 5 mm), a heater 23, a rotation axis 26 of the susceptor, a reaction gas exhaust zone 27 and a cylindrical wall (diameter: 260 mm, thickness: 10 mm) facing to the annular susceptor 22 were provided inside of a reaction container made by quartz (inner diameter: 300 mm; height: 100 mm each about inside dimension). Further, a material feed pipe 24 for introducing dimethylzinc or diethylzinc into the reaction chamber and a gas feed pipe 25 for introducing oxidizing agent gas from the outside into the reaction chamber were provided at the center of the cylindrical wall and as a result, a CVD apparatus as shown in FIG. 3 was fabricated. Additionally, a substrate 21 was settled to be revolved, and to be rotated. Further, a clearance of a reaction chamber 20 in the vertical direction was 15 mm.
  • a zinc oxide film was formed over a circular silicon substrate having a diameter of 20 mm in accordance with the CVD method in a manner as the following.
  • the atmosphere within the vaporizer was settled to a temperature of 70 °C and to an ordinary pressure, together with maintaining the pressure within the CVD apparatus to 40 kPa, and the substrate to the temperature of 200 °C. Then, by means of the liquid mass flow controller, the above material was fed to the vaporizer with a flow rate of 0.5 g/min, simultaneously feeding argon gas heated to a temperature of 70 °C from the carrier gas feed line into the vaporizer with flow rate of 500 ml/min and as a result, the material was vaporized and supplied to the CVD apparatus. On the other hand, an oxygen gas with a temperature of 30 °C was supplied to the CVD apparatus with a flow rate of 350 milliliter/minute.
  • the zinc oxide film thus obtained was analyzed by means of an atomic force microscope and as a result, it was recognized that the film thickness was 0.10 ⁇ m, and that the zinc oxide film having high purity and being homogeneous was formed. Further, resistibility, hole mobility, and carrier density of the zinc oxide film were as described in Table 1, and it was also recognized that the resultant zinc oxide film had superior characteristics as transparent electro-conductive film.
  • the atmosphere within the vaporizer was settled to a temperature of 50 °C and to an ordinary pressure, together with maintaining the pressure within the CVD apparatus to 40 kPa, and the substrate to the temperature of 200 °C. Then, by means of the liquid mass flow controller, the above material was fed to the vaporizer with a flow rate of 0.01 g/minute, simultaneously feeding argon gas heated to a temperature of 50 °C from the carrier gas feed line into the vaporizer with flow rate of 100 milliliter/minute and as a result, the material was vaporized and supplied to the CVD apparatus for 1 minute.
  • the zinc oxide film thus obtained was analyzed by means of an atomic force microscope and as a result, it was recognized that the film thickness was 0.15 ⁇ m, and that the zinc oxide film having high purity and being homogeneous was formed. Further, resistibility, hole mobility, and carrier density of the zinc oxide film were as described in Table 1, and it was also recognized that the resultant zinc oxide film had superior characteristics as transparent electro-conductive film.
  • Example 2 Employing the same material as Example 1, and using the same apparatus for vaporizing and supplying, together with the same CVD apparatus as Example 1, a zinc oxide film was formed over a circular sapphire substrate having a diameter of 20 mm in accordance with the CVD method.
  • the atmosphere within the vaporizer was settled to a temperature of 70 °C and to an ordinary pressure, together with maintaining the pressure within the CVD apparatus to 40 kPa, and the substrate to the temperature of 200 °C. Then, by means of the liquid mass flow controller, the same material as Example 1 was fed to the vaporizer with a flow rate of 0.5 g/minute, simultaneously feeding aragon gas heated to a temperature of 70 °C from the carrier gas feed line into the vaporizer with flow rate of 500 milliliter/minute and as a result, the material was vaporized and supplied to the CVD apparatus for 1 minute.
  • the zinc oxide film thus obtained was analyzed by means of an atomic force microscope and as a result, it was recognized that the film thickness was 0.18 ⁇ m, and that the zinc oxide film having high purity and being homogeneous was formed. Further, resistibility, hole mobility, and carrier density of the zinc oxide film were as described in Table 1, and it was also recognized that the resultant zinc oxide film had superior characteristics as transparent electro-conductive film.
  • the zinc oxide film was formed in the same manner as Example 1, except that diethylzinc was employed instead of dimethylzinc as the material.
  • the zinc oxide film thus obtained was analyzed by means of an atomic force microscope and as a result, it was recognized that the film thickness was 0.11 ⁇ m, and that the zinc oxide film having high purity and being homogeneous was formed. Further, resistibility, hole mobility, and carrier density of the zinc oxide film were as described in Table 1, and it was also recognized that the resultant zinc oxide film had superior characteristics as transparent electro-conductive film.
  • a zinc oxide film was formed over a circular silicon substrate having a diameter of 20 mm in accordance with the CVD method in a manner as the following.
  • the atmosphere within the vaporizer was settled to a temperature of 70 °C and to an ordinary pressure, together with maintaining the pressure within the CVD apparatus to 40 kPa, and the substrate to the temperature of 200 °C. Then, by means of the liquid mass flow controller, the above material was fed to the vaporizer with a flow rate of 0.5 g/minute, simultaneously feeding argon gas heated to a temperature of 70 °C from the carrier gas feed line into the vaporizer with flow rate of 500 milliliter/minute and as a result, the material was vaporized and supplied to the CVD apparatus. On the other hand, an oxygen gas with a temperature of 30 °C was supplied to the CVD apparatus with a flow rate of 350 milliliter/minute.
  • the zinc oxide film thus obtained was analyzed by means of an atomic force microscope and as a result, it was recognized that the film thickness was 0.11 ⁇ m, and that the zinc oxide film being homogeneous was formed.
  • the resistibility of the zinc oxide film was as practical as Examples such that Table 1 shows, the hole mobility was extremely low as described in Table 1, and the carrier density was extremely high as described in Table 1. Accordingly, any characteristics as the transparent electro-conductive film more superior than the zinc oxide film in Examples was not achieved.
  • the industrial process for film formation without accompanying any danger such as an ignition among the air and an explosion among oxygen provides means for production extremely practical in the viewpoints of environment and safety.

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Claims (5)

  1. Procédé pour former du film d'oxyde de zinc sur une surface d'un substrat qui comprend une étape de vaporisation et de fourniture d'un matériau préparé en dissolvant du diméthylzinc ou du diéthylzinc dans un solvant organique à un appareil de dépôt en phase vapeur par procédé chimique et une étape de fourniture simultanée d'un gaz comprenant un agent d'oxydation gazeux à l'appareil de dépôt en phase vapeur par procédé chimique.
  2. Procédé pour former du film d'oxyde de zinc selon la revendication 1, dans lequel ledit agent d'oxydation gazeux est un gaz oxygène, un gaz ozone, du gaz d'oxydes d'azote ou un gaz vapeur.
  3. Procédé pour former du film d'oxyde de zinc selon la revendication 1, dans lequel ledit substrat est un substrat de silicium, un substrat de saphir, un substrat de céramique, un substrat de verre, un substrat de métal ou un substrat d'alliage.
  4. Procédé pour former du film d'oxyde de zinc selon la revendication 1, dans lequel ledit solvant organique est un éther, une cétone, un ester, un hydrocarbure ou un alcool.
  5. Procédé pour former du film d'oxyde de zinc selon la revendication 1, dans lequel une teneur en diméthylzinc ou diéthylzinc dans ledit matériau est comprise dans une gamme allant de 0,1 à 5 mol/litre.
EP06010939A 2005-06-01 2006-05-26 Procédé de préparation d'une couche de ZnO Expired - Fee Related EP1728893B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005161187A JP4699092B2 (ja) 2005-06-01 2005-06-01 酸化亜鉛膜の成膜方法

Publications (3)

Publication Number Publication Date
EP1728893A2 EP1728893A2 (fr) 2006-12-06
EP1728893A3 EP1728893A3 (fr) 2007-09-05
EP1728893B1 true EP1728893B1 (fr) 2011-04-13

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EP06010939A Expired - Fee Related EP1728893B1 (fr) 2005-06-01 2006-05-26 Procédé de préparation d'une couche de ZnO

Country Status (7)

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US (1) US20060275948A1 (fr)
EP (1) EP1728893B1 (fr)
JP (1) JP4699092B2 (fr)
KR (1) KR20060125500A (fr)
CN (1) CN1873051A (fr)
DE (1) DE602006021256D1 (fr)
TW (1) TWI332531B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
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DE102012203212A1 (de) * 2012-03-01 2013-09-05 Osram Opto Semiconductors Gmbh Beschichtungsanlage und verfahren zur durchführung eines aufwachsprozesses

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GB0518383D0 (en) * 2005-09-09 2005-10-19 Pilkington Plc Deposition process
US20090291293A1 (en) * 2006-07-14 2009-11-26 Dai Nippon Printing Co., Ltd. Film with transparent electroconductive membrane and its use
US7491575B2 (en) * 2006-08-02 2009-02-17 Xerox Corporation Fabricating zinc oxide semiconductor using hydrolysis
JP4616359B2 (ja) * 2007-01-09 2011-01-19 韓國電子通信研究院 電子素子用ＺｎＯ半導体膜の形成方法及び前記半導体膜を含む薄膜トランジスタ
KR100966081B1 (ko) * 2008-01-03 2010-06-25 아주대학교산학협력단 산화아연박막의 방법 및 이를 이용한 박막 트랜지스터의형성방법
JP5200551B2 (ja) * 2008-01-18 2013-06-05 東京エレクトロン株式会社 気化原料供給装置、成膜装置及び気化原料供給方法
CN102165097A (zh) 2008-09-24 2011-08-24 东芝三菱电机产业系统株式会社 氧化锌膜(ZnO)或氧化镁锌膜(ZnMgO)的成膜方法及氧化锌膜或氧化镁锌膜的成膜装置
CN102482113B (zh) * 2009-04-21 2015-08-26 东曹精细化工株式会社 掺杂或非掺杂的氧化锌薄膜制造用组合物以及使用其的氧化锌薄膜的制造方法
TWI465401B (zh) * 2009-04-21 2014-12-21 Tosoh Finechem Corp Doped or undoped zinc oxide thin film manufacturing method and a method for producing the zinc oxide thin film using the same
JP5674186B2 (ja) * 2010-02-16 2015-02-25 国立大学法人 宮崎大学 酸化亜鉛薄膜製造方法、およびこの方法で製造した帯電防止薄膜、紫外線カット薄膜、透明電極薄膜
JP5515144B2 (ja) * 2009-05-12 2014-06-11 東ソー・ファインケム株式会社 ドープ酸化亜鉛薄膜形成用組成物及びドープ酸化亜鉛薄膜の製造方法
WO2010131621A1 (fr) * 2009-05-12 2010-11-18 国立大学法人 宮崎大学 Composition pour la production d'une couche mince d'oxyde de zinc dopée, procédé pour la production d'une couche mince d'oxyde de zinc, couche mince antistatique, couche mince bloquant les rayons ultraviolets et couche mince d'électrode transparente
RU2542977C2 (ru) * 2009-10-15 2015-02-27 Аркема Инк. НАНЕСЕНИЕ ЛЕГИРОВАННЫХ ПЛЕНОК ZnO НА ПОЛИМЕРНЫЕ ПОДЛОЖКИ ХИМИЧЕСКИМ ОСАЖДЕНИЕМ ИЗ ГАЗОВОЙ ФАЗЫ ПОД ВОЗДЕЙСТВИЕМ УФ
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JP2006336062A (ja) 2006-12-14
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EP1728893A3 (fr) 2007-09-05
EP1728893A2 (fr) 2006-12-06
KR20060125500A (ko) 2006-12-06
CN1873051A (zh) 2006-12-06
DE602006021256D1 (fr) 2011-05-26
JP4699092B2 (ja) 2011-06-08

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